Chapters authored
Silicon-Based Micromachining Process for Flexible Electronics
In this chapter, we introduce silicon-based micromachining process and devices for flexible electronics application. Silicon-based flexible electronics have the unique advantage over other polymer-based process that leverage the traditional standard CMOS process and can be integrated with scalable IC technology. While integrating with CMOS process, special considerations must be taken into account, such as release process, transfer process, and process integration, in order to produce silicon-based flexible electronics. Several efforts and process developments will be illustrated in this chapter with the highlights of imager and wearable electronics application.
Part of the book: Micromachining
Spin Pumping in Magnetostrictive Ta/FeGaB/Ta Multilayer Thin Films
The magnetostrictive multilayer thin film stack (Ta/FeGaB(t)/Ta) deposited/sputtered, studied the surface morphology, static and dynamic magnetic properties. The static magnetic properties multilayer studied; the coercive field and squareness increased for increasing thickness of FeGaB. The systematic study of damping in Ta/FeGaB/Ta multilayer performed by use of broadband ferromagnetic resonance (FMR) spectroscopy in-plan geometry in the range of temperature from 300 K to 100 K. The data were fitted to obtain the inhomogeneous line width (∆H0) and the damping factor (α). The damping factor is enhanced for the increased thickness of FeGaB. The enhancement of damping is due to spin pumping at the interface of Ta and FeGaB. The spin mixing conductance (geff) was calculated for magnetostriction thin films FeGaB; which had been increased for lowering the temperature. At 0 K, the geff of thin-film stack has 0.141 × 1018 m−2. Therefore, the magnetostriction multilayer film stack can be used for magnonics, spin caloritronics, and spintronics applications.
Part of the book: Thin Films