Open access peer-reviewed Edited Volume

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

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Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their ApplicationsEdited by Yogesh Kumar Sharma

Published: September 12th 2018

DOI: 10.5772/intechopen.71702

ISBN: 978-1-78923-669-9

Print ISBN: 978-1-78923-668-2

eBook (PDF) ISBN: 978-1-83881-599-8

Copyright year: 2018

Books open for chapter submissions

8618 Total Chapter Downloads

17 Crossref Citations

10 Web of Science Citations

19 Dimensions Citations


Open access peer-reviewed

1. Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

By Yogesh K. Sharma


Open access peer-reviewed

2. TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors

By Neophytos Lophitis, Anastasios Arvanitopoulos, Samuel Perkins and Marina Antoniou


Open access peer-reviewed

3. Main Differences in Processing Si and SiC Devices

By Fan Li and Mike Jennings


Open access peer-reviewed

4. High-Performance Packaging Technology for Wide Bandgap Semiconductor Modules

By Paul Mumby-Croft, Daohui Li, Xiaoping Dai and Guoyou Liu


Open access peer-reviewed

5. Status of SiC Products and Technology

By Anup Bhalla


Open access peer-reviewed

6. GaN-Based Schottky Diode

By Yaqi Wang


Open access peer-reviewed

7. Inductive Power Transfer for Electric Vehicles Using Gallium Nitride Power Transistors

By Cai Qingwei Aaron and Siek Liter


Edited Volume and chapters are indexed in

  • Worldcat
  • OpenAIRE
  • Google Scholar
  • AZ ebsco
  • Base
  • CNKI

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