Yogesh Kumar Sharma
Dr. Yogesh Sharma was born in Himachal, India. He received the B.Sc. degree from Himachal Pradesh University, India in 2002 and the M.Sc degree in Physics from Punjab University, Chandigarh, India in 2004. Following this, he had worked as a lecturer for three years in a college, teaching mathematics and physics courses. Later, he moved to the USA to pursue his Ph.D in 2007. He started his integrated Ph.D. program at Auburn University, AL, US in wide band gap semiconductor technology, SiC and GaN. He completed his second Masters degree in applied physics in 2009 and Ph.D. degree in 2012. During his Masters he worked on GaN Schottky diodes and AlGaN/GaN HEMTs for bio sensing applications. His Ph.D work was to electricallly improve the SiO2/4H-SiC interface, which is a crucial area for SiC MOS technology advancement, even today. He worked on two projects - Thin PSG and Nitrogen Plasma processes to improve the interface, and the successful execution of these projects resulted in peer-reviewed journal papers and invited talks at various international conferences. Immediately after finishing his Ph.D. in Dec 2012 he moved to University of Warwick, Coventry, U.K. as a Research Fellow and continued working on SiC technology. At Warwick University he was involved with two EPSRC funded projects - the development of 600 V–1200 V 3C-SiC power devices, and 10 kV MOSFETs on 4H-SiC for high power applications. Currently, he is based as Principal SiC engineer at Dynex Semiconductor in the R&D department. He is actively involved with the UK government funded TSB (Technology Strategy Board) projects. He has been working on two TSB projects - SiCER and TraSiCa. He has authored/co-authored over 50 technical/conference papers. He is the holder of one patent and acted as a reviewer for IEEE Transactions on Power Electronics, Solid State Electronics, IEEE Electronic Device Letters, Electronics, Materials and the Materials Research Society. He is a member of IEEE and IET.