The benefits of silicon carbide (SiC) devices for use in power electronics are driven by fundamental material benefits of high breakdown field and thermal conductivity, and over 25 years of sustained development in materials and devices has brought adoption to a tipping point. It takes the confluence of many separate developments to drive large-scale adoption, which we will examine in this chapter.
Part of the book: Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications