Due to the different physical properties of Si and SiC, many conventional Si device processing techniques cannot be directly transferred to SiC device fabrication. To deliver high-performance SiC commercial power devices, new techniques quite different from Si industry were developed in past decades for processing device, such as dopant implantation, metal contact, MOS interface, etc. On the other hand, the physics model behind many of these SiC processing technologies is not updated in the same pace that the success of them can still not be fully understood.
Part of the book: Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications