Power metal-oxide-semiconductor field-effect transistors (MOSFETs) are thought to be highly robust and versatile in high-speed switching applications in power electronics design due to its intrinsic high input impedance and compact size. This chapter concerns the development of a high-performance low voltage rating power MOSFET possessing low on-resistance and excellent avalanche current capability for an automotive electric power steering system (EPS). Using industry-standard Technology Computer-Aided Design (TCAD) tools, the planar- and trench-technology power MOSFETs, have been designed, modeled, simulated and compared. We surveyed and analyzed the specific on-resistance due to the different device structures, and various methods are highlighted and compared so that their benefits can be better understood and adopted. Additionally, the device ruggedness has been investigated and its improvement was evaluated and established for that of the trench MOSFET due to gate corner smoothing.
Part of the book: Complementary Metal Oxide Semiconductor