Open access peer-reviewed chapter

Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications

By Stefania Maria Serena Privitera

Submitted: May 10th 2011Reviewed: December 5th 2011Published: May 30th 2012

DOI: 10.5772/35338

Downloaded: 2454

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Stefania Maria Serena Privitera (May 30th 2012). Ion Implantation in Phase Change Ge2Sb2Te5 Thin Films for Non Volatile Memory Applications, Ion Implantation, Mark Goorsky, IntechOpen, DOI: 10.5772/35338. Available from:

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