Mark Goorsky

University of California Los Angeles United States of America

Mark Goorsky is a Professor of Materials Science and Engineering at UCLA and was chair of the department from 2004-2009.  He received his Ph.D. in Materials Science and Engineering in 1989 from the Massachusetts Institute of Technology, and his B.S. in MSE in 1984 from Northwestern University.  He held a post-doctoral position at the IBM Thomas J. Watson Research Center (Jan. 1989 - June 1991) and started at UCLA in 1991.   His research focuses on materials integration and the relationship between materials defects and device performance in semiconductor structures.  He is an associate editor of the Journal of Crystal Growth, and a member of the United States Air Force Scientific Advisory Board.  He was awarded the T.S. Walton Award from the Science Foundation of Ireland in 2010, the TRW Outstanding Young Teacher Award in the School of Engineering and Applied Science in 1993, the National Science Foundation CAREER Award in 1995, and the Northrop Grumman Outstanding Young Researcher Award in 1996. Goorsky is also active in education outreach.  He leads activities for grade school and high school students through organizations such as the Society of Latino Engineers and Scientists, the American Indian Science and Engineering Society, and the National Society of Black Engineers.  He received the UCLA Center for Excellence in Engineering and Diversity (CEED) Award for Outstanding Service to K-16 Science Education.

Mark Goorsky

1books edited

2chapters authored

Latest work with IntechOpen by Mark Goorsky

Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.

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