This chapter is dedicated to the processes linked with the collection of photo-generated carriers in silicon heterojunction (SHJ) solar cells with a focus on the key role of the amorphous silicon/crystalline silicon heterojunction. The intention is to explain the role of carrier inversion at the heterointerface and connect it with the properties of the SHJ to obtain deeper understanding of carrier transport properties and collection, which goes beyond amorphous silicon-based structures and will contribute to understanding the new emerging SHJ based on amorphous silicon oxide and metal oxide emitter layers. The study is extended by a simulation of the TCO/emitter interface with the aim to reveal the effect of parasitic Schottky barrier height on the performance of the SHJ solar cell. In addition, the simulation study of SHJ under concentrated light and varied temperatures is outlined to show the main limitations and prospects of SHJ structures for utilization under concentrated light.
Part of the book: Nanostructured Solar Cells