Comparison of the fixed interface charge density Qf and the interface defect density distribution Dit(E) for different investigated tunnel oxides (thermal-SiOx, wet-SiOx, ozone-SiOx) in this work as compared to literature.
\r\n\tThis book will provide information about fouling mitigation in general and the ecofriendly methods of fouling mitigation. Chapters from this book will inform the readers about fouling models and predictive maintenance of the equipment prone to fouling. Adaptive means for prolonged continuous operation will also be addressed. This book will guide the readers in selection of fouling mitigation approaches for different applications. A brief discussion on economic impact of fouling in different industries will also be part of this book.
",isbn:null,printIsbn:"979-953-307-X-X",pdfIsbn:null,doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!1,isSalesforceBook:!1,hash:"f31d1d99cc6caac249973b404ae9091a",bookSignature:"Dr. Salim Newaz Kazi",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/9022.jpg",keywords:"Scales and Deposits, Water Chemistry, Types of Fouling, Mechanism of Fouling, Fouling in Chemical Industries, Fouling in Dairy Industries, Membrane and Filtration, Membrane Fouling, Characterize Scales, Dissolution of Deposits, Conventional Fouling Mitigation, Ecofriendly Ways of Mitigation",numberOfDownloads:null,numberOfWosCitations:0,numberOfCrossrefCitations:null,numberOfDimensionsCitations:null,numberOfTotalCitations:null,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"May 16th 2019",dateEndSecondStepPublish:"February 14th 2020",dateEndThirdStepPublish:"April 14th 2020",dateEndFourthStepPublish:"July 3rd 2020",dateEndFifthStepPublish:"September 1st 2020",remainingDaysToSecondStep:"2 years",secondStepPassed:!0,currentStepOfPublishingProcess:5,editedByType:null,kuFlag:!1,biosketch:null,coeditorOneBiosketch:null,coeditorTwoBiosketch:null,coeditorThreeBiosketch:null,coeditorFourBiosketch:null,coeditorFiveBiosketch:null,editors:[{id:"93483",title:"Prof.",name:"Md Salim Newaz",middleName:null,surname:"Kazi",slug:"md-salim-newaz-kazi",fullName:"Md Salim Newaz Kazi",profilePictureURL:"https://mts.intechopen.com/storage/users/93483/images/system/93483.jpg",biography:"Dr. S. N. Kazi is a Professor of Mechanical Engineering at the University of Malaya. He has a specialization in Heat Transfer, Fluid Mechanics, Particle Characterization, Heat Exchanger Fouling Mitigation, Nanofluid synthesis and applications, and Renewable Energy. He has a long Engineering service experience in Petrochemical Industries. He also worked as a consultant for different Engineering Companies. Dr. Kazi has an academic background with the B. Sc., M. Sc., and M. S. in Mechanical Engineering. He received his Ph.D. in Chemical and Materials Engineering. He is a member of many professional bodies and an editorial member of many journals. He has been working as an academic since 2009. He has completed supervision of many postgraduate theses, published many technical papers, and edited some books.",institutionString:"University of Malaya",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"5",totalChapterViews:"0",totalEditedBooks:"5",institution:{name:"University of Malaya",institutionURL:null,country:{name:"Malaysia"}}}],coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"6",title:"Biochemistry, Genetics and Molecular Biology",slug:"biochemistry-genetics-and-molecular-biology"}],chapters:null,productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},personalPublishingAssistant:{id:"280415",firstName:"Josip",lastName:"Knapic",middleName:null,title:"Mr.",imageUrl:"https://mts.intechopen.com/storage/users/280415/images/8050_n.jpg",email:"josip@intechopen.com",biography:"As an Author Service Manager my responsibilities include monitoring and facilitating all publishing activities for authors and editors. From chapter submission and review, to approval and revision, copy-editing and design, until final publication, I work closely with authors and editors to ensure a simple and easy publishing process. I maintain constant and effective communication with authors, editors and reviewers, which allows for a level of personal support that enables contributors to fully commit and concentrate on the chapters they are writing, editing, or reviewing. I assist authors in the preparation of their full chapter submissions and track important deadlines and ensure they are met. I help to coordinate internal processes such as linguistic review, and monitor the technical aspects of the process. As an ASM I am also involved in the acquisition of editors. 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Early changes that occur prior to the vascular affection have been acquiring more interest by the scientific community. Retinal proteomic analysis, functional and histopathological studies have revealed alteration in the levels of some proteins and a neurodegeneration state mainly involving ganglion and photoreceptor cells accompanied by reactive gliosis [1, 2, 3, 4, 5].
The interphotoreceptor retinoid-binding protein (IRBP), which is the most abundant protein in the interphotoreceptor matrix (IPM) [6, 7, 8, 9, 10], is one of the principal elements altered in early stages of diabetes. This protein is expressed mainly by the cone and rod photoreceptor cells [11, 12, 13]. It binds to the retinoids in the interphotoreceptor matrix and facilitates their exchange between the IPM and the cells that carry out the visual cycle [14, 15, 16].
Aside from the retinoid delivery, IRBP protects retinoids against degradation [17], the retinal cells from oxidative stress and light-induced injury [18, 19], and is important for eye development [20].
In pathological conditions in which a deficiency of IRBP exists, an important anomaly of the photoreceptor cells and the visual cycle can be detected which leads in some cases to the development of retinitis pigmentosa, accumulation of the cytotoxic bis-retinoid A2E, cone-rod photoreceptor dystrophy and an elongated myopic eye shape [20, 21, 22, 23, 24, 25].
IRBP is linked to an autosomal recessive form of retinitis pigmentosa. A heterozygous T-C transition at the position 3024 [26] and a missense mutation of D1080N [22] have been identified.
Other studies correlate the presence of
The relationship between IRBP deficiency and accumulation of the lipofuscin precursor A2E has only be demonstrated experimentally on two different animal models.
Considering visual cycle components, decreased IRBP expression is one of the most characteristic changes in diabetes. Many studies have evaluated the changes in protein levels and IRBP expression and also attempted to explain the reasons for its depletion.
One study revealed decreased expression of IRBP determined by both qPCR and protein quantification on post-mortem samples of diabetic patients [28]. Another study showed that this decreased expression directly correlated with the evolution of the DR, and also tested the effect of glucose and inflammatory cytokines on IRBP expression
The precise mechanisms responsible for the decreased IRBP levels remain unclear. It is known that high glucose and some circulating fatty acids can induce the secretion of inflammatory cytokines by Müller cells [31, 32]. Despite evidence that high levels of glucose and inflammatory cytokines are able to decrease the expression of IRBP [24, 29], other mechanisms may be involved. With the early onset of diabetes, photoreceptors undergo oxidative stress resulting in increased nitrosative-oxidative stress [33, 34]. This biochemical stress can induce damage to proteins promoting their degradation [35]. The unfolded protein response (UPR) has been detected to be active in photoreceptor cells in animal studies [36]; however no studies have linked this process to decreased IRBP levels.
Disruption of the external limiting membrane (ELM) and the outer retinal barrier (ORB) may play a role in leaking of IRBP into the outer nuclear layer or Bruch’s membrane. Studies of animals in diabetic conditions have shown decreased occluding abilities in the Müller cell tight junctions compromising the external limiting membrane [37]. Also retinal pigment epithelium (RPE) dysfunction in early stage diabetes has been described in animal models [38]. It is still unclear the impact of these mechanisms over the IRBP levels.
Due to its importance on the visual cycle, it is expected that decreased levels of IRBP produce electrophysiological and morphological changes that manifest itself in the damage to the photoreceptors and the impaired visual cycle.
Deficit of blue-flicker discrimination has been observed in the early stages of diabetes [39]. ERGs have revealed lower oscillatory potential amplitudes suggesting alterations in the photoreceptors and the vision cycle [40, 41, 42]. Additionally, color vision has been shown to be altered in these early diabetes stages. Adaptometry studies have also shown alteration in diabetes; even with transient hyperglycemia a patient can have a delay in dark adaptation [43, 44, 45].
One study in
It has been found that glucose levels can influence the vision cycle rhodopsin regeneration ratio [48, 49]. Recently, one research group found depletion of rhodopsin regeneration with an accompanying decrease in STRA6, IRBP, and 11-cis retinal (11-cRAL) in a diabetic animal model [30].
IRBP deficiency in diabetes could importantly impact DR progression although the relationship between its levels and the complications in diabetes remain unclear. Previous evidence suggest that it potentially impacts DR outcomes. In addition, some retinoid analogues have shown to be beneficial in the prevention of early stage DR due to their antioxidant properties [50, 51]. IRBP has been shown to have these anti-oxidant properties against some vision cycle retinoid sub-products [18].
IRBP deficiency can promote the accumulation of the cytotoxic bis-retinoid A2E. This molecule has been described to be involved in the pathogenesis of age-related macular degeneration (AMD) [52, 53] and Stargardt disease [54]. A2E is known to be able to produce cytotoxicity by destabilizing membranes, generating reactive oxygen species and producing photo-oxidation [55, 56, 57, 58]. Since A2E is a lipofuscin precursor, fundus autofluorescence can be clinically used to detect its presence [59, 60]. However, hard exudates can decrease autofluorescence interfering with the evaluation of lipofuscin [61]. It would be expected that this accumulation of lipofuscin precursors in diabetes would increase the risk for developing AMD. Many studies have shown contradictory results and this relationship has not been established [62, 63, 64, 65]. The actual accumulation, as well as the role of A2E in diabetes complications, is unclear and require further investigation.
It is important to reveal the mechanisms responsible for decreased IRBP in diabetes and to establish its role in DR in order to establish novel approaches for the prevention of these vision threatening events.
To meet the future energy needs, there is a need to develop low-cost alternative energy sources to complement the conventional energy sources (e.g., oil, gas, coal) as well as to address the pressing environmental issues associated with the latter. Hence, energy-related technology roadmaps are actively being released and revised toward the future energy needs. One good example is the International Technology Roadmap for Photovoltaic (ITRPV) [1]. In general, a successful deployment of any selected solar cell technology will be mainly dominated by (i) cost-effectiveness of the material and processes, (ii) scalability to high-volume manufacturing, (iii) device performance, and (iv) long-term stability of product. To progress toward item (iii), ITRPV predicts a continuous reduction of recombination losses in the wafer as well as at the front and rear surfaces of the solar cell. According to Ref. [2, 3, 4], given the considerable improvements in the wafer bulk, and surface passivation layers, the main source of recombination losses in high-efficiency solar cells is now dominated by the metal contacts. Thus, the ability to greatly reduce the recombination losses underneath the solar cell metal contacts (i.e., contact passivation) coupled with other technological advancements will be instrumental toward attaining the increasing solar cell efficiency targets.
One of the earliest examples of contact passivation can be found in the heterojunction silicon wafer solar cells, which utilizes a stack of intrinsic and doped amorphous silicon (a-Si:H) heterojunction layers [5, 6, 7] on both surfaces of the silicon wafer. The ultrathin (<5 nm) intrinsic a-Si:H layer not only serves to passivate the silicon surface but also to selectively enable hole or electron transport across this “tunnel layer,” sandwiched between the overlying conductive a-Si:H layer and the crystalline silicon wafer. In this application, the contact-related recombination losses with the intrinsic/doped a-Si:H stack is significantly lower than utilizing the doped a-Si:H layers alone on the crystalline silicon wafers [5], hence establishing contact passivation for the former case. It can then be generalized that contact passivation can be established by deploying ultrathin passivating (and even in principal insulating, if thick) tunnel layers capped with a highly doped capping layer material with a suitable doping polarity or work function to form either hole-selective or electron-selective passivated contacts. Some examples of high/low work function capping layer materials such as transition metal oxides (WOx, VOx, etc.) and doped organic materials had been reported [4, 8].
Some prominent examples of single-junction silicon wafer-based high-efficiency (≥25%) solar cell concepts which adopt contact passivation include the amorphous silicon heterojunction interdigitated back contact (IBC) solar cell by Kaneka (26.6%) [9], the tunnel layer passivated interdigitated back contact (IBC) solar cell by SunPower (25.2%) [10], the polysilicon on oxide (POLO) passivated contact interdigitated back contact (IBC) solar cell by ISFH (26.1%) [11], and the conventionally front- and rear-contacted tunnel layer passivated contact solar cell (TOPCon) by the Fraunhofer ISE team (25.7%) [12]. The excellent performance of the TOPCon cell (despite being conventional front- and rear-contacted, instead of being contacted in an all-back-contact configuration) can be attributed to the highly effective and simplified full-area rear-side passivating contact scheme, which inserts an electron-selective tunnel layer passivated rear-side contact between the wafer and the full-area rear-side contact of the solar cell, comprising a wet-chemically formed silicon oxide tunnel layer (wet-SiOx) and a highly n-doped polysilicon capping layer. This achieves both excellent interface passivation toward the silicon wafer and a highly selective collection of excess electron charge carriers. Although this work was established on a small-sized (4 cm2) float-zone n-type silicon wafer, adopting a conventional front-side selective emitter, photolithography processes, and evaporated contacts, it has set the stage for immense research interests such as those reported in Refs. [12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26]. Contact passivation presents a clear advantage over the popular passivated emitter rear contact (PERC) solar cell concept by UNSW [27], which is currently a large scale adopted by the industry (as of Jan. 2019), as an even higher solar cell efficiency can be reached (i.e., by directly passivating the metal solar cell contacts instead of “only” reducing the metal contact area fraction).
An ideal tunnel layer, suited for contact passivation, (i) exhibits a tunneling relevant thickness (i.e., <2 nm) [14], (ii) exhibits excellent interface passivation toward the crystalline silicon wafer [28, 29], and (iii) contributes only minimally to the total contact resistance of the solar cell (in the order of maximal 1 Ω cm2) [30]. Furthermore, an ideal capping layer, suited for contact passivation, should be either (i) highly doped or (ii) exhibit a high/low work function [31] in order to ensure selective excess charge carrier extraction.
The already proven success on electron-selective passivated contacts is also generating huge interest and research activities on hole-selective passivated contacts now. Pertaining to the feasibility studies of different tunnel layer candidates for hole-extracting passivated contacts, most previous reports had focused on using silicon-based oxides formed via either wet-chemical approaches (wet-SiOx) or UV/ozone photo-oxidation (ozone-SiOx) approaches. In our published works [28, 29, 32, 33, 34], a comprehensive evaluation of passivation quality and interface properties of silicon-based oxides (SiOx) and atomic layer-deposited aluminum oxides (ALD-AlOx) had revealed a larger potential for ALD-AlOx to be integrated in hole-selective passivated contacts as compared to the commonly used wet-SiOx or ozone-SiOx. This stems from a significantly higher negative fixed interface charge density (∼1 order of magnitude higher at −6 × 1012 cm−2) even at a tunneling relevant thickness (just a few ALD cycles) while maintaining a relatively low interface defect density (
Regarding contact passivation, however, it is to be noted that in most of these reports, the carrier-selective passivated contacts were mostly deployed at the rear side of the solar cell, while the front side composes of a conventionally diffused silicon surface followed by the standard anti-reflection coatings and screen-printed fire-through metal contacts. Since the rear-side deployed passivated contacts can achieve an excellently low contact recombination loss, instinctively the next focus will be to reduce the contact recombination loss at the front side as well in order to improve device performance. With varying degrees of success using either electron-selective or hole-selective passivated contacts in a standalone configuration, the question arises on the feasibility to integrate both electron-selective and hole-selective passivated contacts together in a typical silicon solar cell architecture. Regardless of the technological advances, the fundamental driving factors toward industry adoption will still be the same as outlined earlier (i.e., cost-effectiveness of the material and processes, manufacturing scalability, device performance, and product stability). Hence, it is of keen interest in this paper to evaluate the feasibility of combining our optimized electron-selective and hole-selective passivated contacts obtained via industrial relevant processes onto an otherwise conventional front and rear screen-printed silicon solar cells and comparing that to solar cells with only a rear-side passivated contact scheme.
In this work, we will investigate “conventional” SiOx/poly-Si passivated contacts to be deployed on both sides of the solar cell, instead of only being deployed rear side. Using different lifetime test structures and solar cell structures, the following topics are investigated: (i) the influence of the tunnel oxide choice on the passivation quality, comparing wet-chemically formed oxides (wet-SiOx), UV photo-oxidation-formed ozone oxides (ozone-SiOx), and in situ thermal oxidation-formed oxides (thermal-SiOx); (ii) the impact on the contact passivation quality after doped silicon capping layers were applied upon the tunnel oxide layers on the same lifetime test structures (formed via tube diffusion doping of low-pressure chemical vapor deposition (LPCVD) of intrinsic polysilicon layers, to serve as either electron-selective or hole-selective capping layers); (iii) the influence of the surface conditions on the passivation quality by both types of electron- or hole-selective passivated contacts; (iv) the integration of the optimal passivated contacts onto a practical double-sided passivated contact solar cell structure and studies on the resulting passivation quality, both prior to and after subsequent anti-reflection passivation layers (i.e., SiNx layers) were applied; (v) the influence of the capping layer thickness on the absorbable cell current and various parasitic absorption losses via numerical analysis (SunSolve™) and our experimental approaches to realize ultrathin poly-Si capping layers; and (vi) the ability to apply screen-printed metal contacts on the developed electron-selective and hole-selective passivated contacts.
In addition, from the measured passivation quality results on lifetime test structures, a numerical calculation of the practical solar cell efficiency potential adopting both of our developed electron-selective and hole-selective passivated contacts was performed by utilizing the measured saturation current density
Firstly, the in-house development of device quality passivated contacts based on wet-SiOx/poly-Si(doped), ozone-SiOx/poly-Si(doped), or in situ thermal-SiOx/poly-Si(doped) stack was established using simple planar symmetrical lifetime test structures as sketched in Figure 1. Such structures are convenient for assessing (i) the resulting tunnel layer/doped capping layer stack thickness; (ii) the passivation quality, attributing from the passivated contacts alone (i.e., determining minority carrier lifetime
Schematic of the (a-e) symmetrical lifetime and (f) contact resistance test structures utilized for assessing/ optimizing the passivation quality and minimizing the contact resistance of both, electron-selective and hole-selective passivated contacts, developed on either a wet-SiOx, ozone-SiOx or an in-situ thermal-SiOx tunnel layer. Using the sketched symmetrically passivated contact test structures, the developed SiOx/poly-Si passivated contacts were characterized in terms of their passivation quality, doping profiles, film uniformity and contact resistance.
Next, considering that typical silicon solar cells are either single-sided textured or symmetrically textured, it is relevant to explore the passivation quality when these developed passivated contacts are deployed on textured surfaces as well, while comparing that to planar references, as sketched in Figure 2. The objective is to identify the suitability of our developed electron-selective and hole-selective passivated contacts for textured surfaces and to determine the optimum configuration for a silicon solar cell considering contact passivation for both the front and rear surfaces.
Comparison of the passivation quality by both (a, b) hole-selective and (c, d) electron-selective passivated contacts on both planar and textured lifetime test structures.
It will be shown in later sections that the optimum double-sided passivated contact scheme can be realized by deploying the electron-selective passivated contacts (i.e., poly-Si(n+)/tunnel oxide stacks) on the front textured surface while deploying the hole-selective passivated contacts (i.e., poly-Si(p+)/tunnel oxide stacks) on the rear planar surface. Subsequently, the silicon solar cell precursors with the optimum double-sided passivated contact scheme were experimentally realized according to the process flow shown in Figure 3 and characterized in terms of the passivation quality and doping profile, both prior to and after the standard anti-reflection/passivation dielectric coatings were deposited (i.e., step. 11 and 12, respectively) via microwave PECVD (MAiA, Meyer Burger), while comparing that to the symmetrical lifetime test structures. Selected samples were then subjected to a conventional full-area or bifacial screen printing process using commercially available fire-through paste to contact the electron-selective and hole-selective passivated contacts, through a high-temperature co-firing process at ∼740°C in a fast-firing furnace (BTU) for 1 min. It is to be noted that the time of 1 min accounts for the total time spent within the fast-firing furnace, moving the intended sample across five temperature zones with increasing temperatures, with an estimated time of 5 seconds within the final peak temperature zone. As a final step, an edge isolation is carried out on the finished solar cell via a nanosecond laser process (ILS500LT, InnoLas), followed by electrical characterization.
Potential process flow for a silicon solar cell adopting double-sided passivated contacts and bifacial metal contacts.
One potential issue with replacing the conventional diffused regions with carrier-selective passivated contacts (such as the poly-Si(doped)/tunnel oxide stack in this work) is the presence of parasitic absorption, similar to the case of transparent conductive oxides or amorphous silicon layers in a heterojunction silicon wafer solar cell concept. Hence, there is an optimization potential toward simultaneously achieving excellent passivation quality of both textured and planar surfaces while minimizing the doped poly-Si capping layer thickness as much as possible in order to minimize the parasitic absorption issue.
Thus, it has been tested experimentally how thin our developed contact passivation layers can become while maintaining their excellent passivation quality. This has been realized by two different experimental approaches: (1) applying etch-back technology, thereby thinning down the already optimized thick layers, and (2) diffusion re-optimization for ultrathin LPCVD of intrinsic poly-Si layers.
To provide more insights into the influence of the doped capping layer thickness on the maximum absorbable current density
Finally, it is of keen interest to predict the impact of combining both of our developed electron-selective and hole-selective passivated contacts on the rear (and front side) of a silicon solar cell. To do this, we utilized Brendel’s model [54] to predict the efficiency potential of a passivated contact and further enhanced the model to explicitly consider front-side conventional screen-printed contacts. This is done by additionally considering the combined front-side saturation current density
Last but not least, the feasibility to contact our developed ultrathin contact passivation layers by an industrially suited method (i.e., aiming at conventional screen printing) is investigated, and the remaining issues, still to be solved in order to reach this goal, are addressed.
Concerning characterization metrology, we used the following tools: The average thickness and uniformity of the tunnel layers/doped poly-Si capping layers were determined by ellipsometry (SE-2000, Semilab) over a 9-point mapping measurement. The passivation quality was determined from the injection-dependent effective carrier lifetime measurements using a contactless flash-based photoconductance decay tester (WCT-120, Sinton Consulting) operated in both transient and quasi steady-state modes (QSSPC), which adopts an intrinsic carrier concentration of 8.6 × 109 cm−3 in the calculation of the saturation current densities. To provide further insights at the tunnel layer/silicon interface, the fixed interface charge density
As mentioned earlier, the development and optimization of contact passivation layer stacks were initiated on symmetrical planar lifetime test structures as sketched in Figure 1. Prior to deposition of the doped capping layer, various tunnel oxide candidates were screened (i.e., wet-SiOx, ozone-SiOx, and thermal-SiOx) in terms of their deposition techniques as well as the time required to get tunneling relevant thicknesses. Starting from our wet-chemically formed oxides (wet-SiOx) via the standard RCA2 solution, Figure 4(a) shows that the resulting wet-SiOx tunnel oxide thickness is independent of the oxidation time utilized (1–10 min) and is well within the tunneling relevant thickness regime (∼1.2–1.5 nm). These wet-SiOx tunnel oxide layers were also found to exhibit a highly leaky interface toward the silicon bulk, as attempts to determine the wet-SiOx/c-Si interface properties
(a) Comparison of the wet-chemical (RCA2) oxidation time on the measured wet-SiOx tunnel oxide thickness. The wet-SiOx thickness does not exhibit a time dependence (1–10 min) and has a thickness range of ∼1.2–1.5 nm, relevant for device integration. (b) For ozone-SiOx, the UV exposure time directly affects the ozone-SiOx tunnel oxide thickness, with a recommended exposure time of ≤3 min to achieve tunneling relevant thickness.
In contrast, for the investigated UV/ozone photo-oxidation-formed ozone-SiOx tunnel oxides, Figure 4(b) shows that the resulting ozone-SiOx layer thickness shows a time dependence of the photo-oxidation time, which increases from ∼1.3 nm for an exposure time of 3 min to ∼2.5 nm for 10 min. Beyond 10 min, the thickness of the ozone-SiOx layer saturates at ∼2.7 nm (i.e., surface reaction limited). Hence, considering the need for tunneling relevant applications (<1.5 nm), the UV/ozone exposure time should be limited to ≤3 min. Similar to the wet-SiOx case, the ozone-SiOx tunnel oxides were also found to be leaky in the as-deposited state, evident from its inability to measure
Finally, our investigated in situ thermal oxides were also found to exhibit a deposition time dependence on the measured oxide thickness, in which an in situ oxidation time of 30 secs at 570°C was already sufficient to achieve a tunneling relevant thickness of 1.0 to 1.2 nm. At higher deposition timings (e.g., 5 min), the thickness increases to ∼13 nm which is not suitable for tunneling relevant applications. Correspondingly, an in situ thermal oxide growth rate of ∼2.4–2.6 nm/min can be expected. Interestingly, in contrast to the wet-SiOx and ozone-SiOx tunnel layers, our as-deposited thermal-SiOx tunnel oxides were able to retain the deposited charges from the contactless corona charge—Kelvin probe measurements, allowing the fixed interface charge density and the interface defect density distribution to be determined (see Figure 5). At the first glance, this already suggests that the in situ thermal-SiOx exhibits a higher film quality (i.e., non-leaky) than both wet-SiOx and ozone-SiOx. It is also likely that the thermal-SiOx film structure is more dense, which can be beneficial when coupled with a highly doped silicon capping layer, which could reduce the out-diffusion of dopants into the c-Si bulk. Table 1 summarizes the measured
The in-situ thermal silicon oxides deposited within the LPCVD process prior to the intrinsic poly-Si layers exhibited (a) a negative fixed interface charge density Qf of −4.3 × 1011 cm−2 and (b) a minimum interface defect density Dit(min) of ∼2.5 × 1012 cm−2 eV−1.
Tunnel oxide | Thickness (nm) | Qf (cm−2) | Dit (cm−2 eV−1) | References |
---|---|---|---|---|
Thermal-SiOx | ∼1.2 | −4.30 × 1011 | 2.50 × 1012 | This work |
Wet-SiOx | ∼1.5 | Not measurable | Not measurable | This work |
Ozone-SiOx | ∼1.3 | Not measurable | Not measurable | This work |
Thermal-SiOx | ∼50–240 | +3.00 × 1011 | 1010 ∼ 7 × 1011 | [56, 57, 58, 59] |
Wet-SiOx | ∼1–2 | +1.28 × 1012 | 5.17 × 1012 | [57, 60, 61, 62, 63, 64] |
Ozone-SiOx | ∼1–2 | No data | 1.00 × 1013 | [55] |
ALD-AlOx | ∼1.5 | −6.10 × 1012 | 2.70 × 1012 | [28] |
Comparison of the fixed interface charge density Qf and the interface defect density distribution Dit(E) for different investigated tunnel oxides (thermal-SiOx, wet-SiOx, ozone-SiOx) in this work as compared to literature.
As compared to other thermally grown silicon oxides [56, 57, 58, 59] which exhibited significantly lower
As compared to the TOPCon approach by the Fraunhofer ISE’s team, which deposited doped amorphous silicon films followed by a suitable annealing condition and hydrogenation process to convert the highly doped amorphous silicon to highly doped polysilicon capping layers, we implement an alternative approach by first depositing intrinsic silicon films via the LPCVD approach, followed by either a phosphorus or boron diffusion process to convert it to a highly doped poly-Si(n+) or poly-Si(p+) capping layer, respectively. The optimization goal is to incorporate as much active dopants within the poly-Si layers as possible while reducing or avoiding the out-diffusion of dopants into the c-Si wafer bulk, which will increase the surface recombination rates and reduce the device performance, as also reported in Ref. [65].
As a start, Raman spectroscopy was utilized to monitor the structural evolution of our in-house deposited silicon capping layers, both in the as-deposited intrinsic case and after the optimal diffusion process (boron or phosphorus doped). Figure 6 shows that our LPCVD as-deposited intrinsic silicon films were amorphous in film structure, evident by a single Raman peak centered at a Raman shift of ∼480cm−1 [66]. Nonetheless, upon either a boron diffusion process or a phosphorus diffusion process, which takes place at temperatures between 850 and 950°C, these doped silicon films fully crystallize as evident by a single Raman peak centered at a Raman shift of ∼520.5 cm−1 with a full width at half maximum (FWHM) of 5.3 and 4.0 cm−1, respectively. These findings were comparable to our crystalline silicon wafer reference (Raman shift centered at ∼520.6 cm−1 and a FWHM of 3.5 cm−1). The slightly higher FWHM measured for our doped silicon films indicated a marginally higher structural disorder than a perfect crystalline silicon wafer bulk which is not too surprising, given the high quantities of dopants (1019–1020 cm−3) incorporated in the former.
Raman spectra for our in-house LPCVD of silicon films (∼250 nm), comparing the film crystallinity in the as-deposited state, post-POCl3 diffusion process, and post-BBR3 diffusion process.
The corresponding dopant profile within these highly doped silicon capping layers can be extracted from ECV measurements as shown in Figure 7. After an optimized diffusion doping process to convert the thermal-SiOx/a-Si(intrinsic) capping layer stack toward either an electron-selective passivated contact (i.e., thermal-SiOx/poly-Si(n+) stack) or a hole-selective passivated contact (i.e., thermal-SiOx/poly-Si(p+) stack), the ECV measurements revealed a peak doping concentration within the poly-Si(n+) and poly-Si(p+) capping layers as ∼1.5 × 1020 and ∼5 × 1019 cm−3, respectively.
ECV profiles for both (a) electron-selective passivated contacts comprising thermal-SiOx/poly-Si(n+) stacks and (b) hole-selective passivated contacts comprising thermal-SiOx/poly-Si(p+) stacks. The electron-selective passivated contacts exhibited a higher peak doping concentration than the hole-selective counterpart by a factor of ∼2 times. Poly-Si(p+) layers also exhibited a higher out-diffusion of dopants into the c-Si bulk than the poly-Si(n+) layers, which was found to limit the potentially achievable implied-VOC values (see
The tunnel oxide in the passivated contact stack not only serves as passivation/tunneling purposes, but it also likely serves as a blocking layer to reduce the out-diffusion of dopants from the highly doped silicon capping layer into the crystalline silicon wafer bulk. The lower active dopant concentration within the poly-Si(p+) layer can be partially attributed to the lower doping efficiency of boron atoms than phosphorus atoms [67] based on the theoretical prediction of impurity formation energies and partially attributed to the higher diffusivity of the boron dopants [68] into the silicon bulk which resulted in a deeper boron-diffused junction (see Figure 7). Similar to other reports [65], we also observed experimentally that it is preferable to concentrate all the dopants within the poly-Si layers, as the out-diffusion of dopants is expected to lead to increased surface recombination rates and a corresponding drop in the overall passivation quality as well.
Table 2 summarizes our measured passivation quality results on planar symmetrical lifetime test structures with the optimized doped poly-Si(n+) capping layers on various investigated tunnel oxide candidates (i.e., wet-SiOx, ozone-SiOx, thermal-SiOx). Table 2 shows that using planar symmetrical lifetime test structures, our wet-SiOx/poly-Si(n+) and ozone-SiOx/poly-Si(n+) passivated samples were exhibiting implied-
Tunnel layer/capping layer | Method | Total | References | |
---|---|---|---|---|
Wet-SiOx/poly-Si(n+) | PECVD Centrotherm | 719 ± 2 | – | FhG-ISE |
Wet-SiOx/poly-Si(n+) | PECVD RF-MAiA | 740 | – | [69] |
Wet-SiOx/poly-Si(n+) | LPCVD Tempress | 719 | ∼9 | This work |
Ozone-SiOx/poly-Si(n+) | LPCVD Tempress | 719 | ∼6 | This work |
Thermal-SiOx/poly-Si(n+) | LPCVD Tempress | 729 | ∼9 | This work |
After a hydrogenation/anti-reflection coating step by SiNx | ||||
Wet-SiOx/poly-Si(n+)/SiNx | LPCVD + MAiA | 730 | ∼5 | This work |
Ozone-SiOx/poly-Si(n+)/SiNx | LPCVD + MAiA | 732 | ∼4 | This work |
Thermal-SiOx/poly-Si(n+)/SiNx | LPCVD + MAiA | 737 | ∼5 | This work |
Comparison of the passivation quality of electron-selective passivated contacts on planar Cz n-Si symmetrical lifetime samples, both prior to and after the additional hydrogenation process step via the symmetrical addition of the SiNx capping layers.
The thickness of the tunnel oxides/doped poly-Si layer/SiNx layer is ∼1.5/250/80 nm, respectively.
Since a typical silicon solar cell would be further coated with suitable anti-reflection layers (such as SiNx or AlOx/SiNx stacks) prior to metallization, the influence of these layers on our symmetrical lifetime samples were evaluated as well, by capping the passivated contacts with an additional ∼70-nm-thick SiNx films symmetrically and its resulting passivation quality evaluated. As summarized in Table 2, the measured passivation quality further improves with the additional SiNx capping layers upon all three investigated lifetime test structures with electron-selective passivated contacts. In particular, the thermal-SiOx/poly-Si(n+)/SiNx-capped lifetime structure exhibits high implied-
Tunnel layer/capping layer | Method | Total | References | |
---|---|---|---|---|
Thermal-SiOx/poly-Si(p+) | LPCVD Tempress | 698 | 37 | This work |
ALD-AlOx/poly-Si(p+) | ALD Solaytec + LPCVD | 697 | ∼26 | This work |
After a hydrogenation/anti-reflection coating step by SiNx | ||||
Thermal-SiOx/poly-Si(p+)/SiNx | LPCVD +MAiA | 713 | ∼8 | This work |
Thermal-SiOx/poly-Si(p+)/SiNx | PECVD Centrotherm | 732 | ∼1 | [69] |
Comparison of the passivation quality of hole-selective passivated contacts on planar Cz n-Si symmetrical lifetime samples, both prior to and after the additional hydrogenation process step via the symmetrical addition of the SiNx capping layers.
The thickness of the tunnel oxides/doped poly-Si layer/SiNx layer is ∼1.5/250/80 nm, respectively.
Given the excellent passivation quality from our developed electron-selective and hole-selective passivated contacts on planar Cz silicon wafers, it is then of research and commercial interest to evaluate the performance of these layers on textured surfaces as well, to determine its viability for deployment on a conventional silicon solar cell structure which adopts a front-side textured surface and either a rear-side planar or textured surface. To evaluate that, the lifetime test structures as shown in Figure 2 are utilized, featuring either symmetrical planar surfaces or symmetrical textured surfaces and symmetrically capped by either the electron-selective (thermal-SiOx/poly-Si(n+)) or hole-selective (thermal-SiOx/poly-Si(p+)) passivated contacts. The objective is to identify the suitability of our developed electron-selective and hole-selective passivated contacts for textured surfaces as well and to determine the optimum configuration for a silicon solar cell considering contact passivation for both the front and rear surfaces.
The highlight of this evaluation is plotted in Figure 8. Firstly, considering the influence of surface conditions on the passivation quality, it can be observed consistently from Figure 8 and summarized in Table 4 that both the electron-selective and hole-selective passivated contact stacks exhibited significantly better passivation quality on planar surfaces than on textured surfaces and which were consistent with the best results shown in Tables 2 and 3. Based on a batch average of 18 samples for each investigated lifetime test structure shown in Figure 8, the hole-selective passivated contacts on symmetrical planar lifetime test structures demonstrated an effective minority carrier lifetime
Comparison of the passivation quality (i.e. (a) effective carrier lifetime at 1015 cm−3 injection level, (b) rear side J0 values and (c) implied-VOC values) by electron-selective (thermal-SiOx/poly-Si(n+)) and hole-selective (thermal-SiOx/poly-Si(p+)) passivated contacts on both symmetrical planar and symmetrical textured lifetime test structures. It can be observed that electron-selective passivated contacts are suitable for applications on both planar and textured surfaces (with implied-VOC > 720 mV and > 695?mV respectively), while the hole-selective passivated contacts are only suitable for planar surfaces at the moment (with implied-VOC approaching 700 mV, compare
Structure | Surface | Pass. contact type | |||
---|---|---|---|---|---|
A | Planar | Hole-selective | 1649 | 27.5 | 689 |
B | Textured | Hole-selective | 170 | 265 | 628 |
C | Planar | Electron-selective | 6030 | 5.4 | 723 |
D | Textured | Electron-selective | 1756 | 17.4 | 696 |
Summary of the average measured passivation quality for both electron-selective and hole-selective passivated contacts deployed on both symmetrical planar and symmetrical textured silicon lifetime test structures.
Thus, if a double-sided contact passivation scheme is to be considered, the results in this work suggest that it is preferable to implement a solar cell structure with a textured front surface and a planar rear surface, and adopting the electron-selective passivated contacts at the textured front surface and the hole-selective passivated contacts at the planar rear surface, as will be shown in the next section.
Based on the findings from the previous section, the deployment of double-sided passivated contacts at the solar cell level had been experimentally realized on n-type silicon wafers with a textured front surface and a planar rear surface and adopting an electron-selective (thermal-SiOx/poly-Si(n+)) passivated contacts at the textured front surface and a hole-selective (thermal-SiOx/poly-Si(p+)) passivated contacts at the planar rear surface. This is further compared to reference lifetime test structures with either symmetrical planar surfaces with symmetrical hole-selective passivated contacts or symmetrical textured surfaces with symmetrical electron-selective passivated contacts, as sketched in Figure 9. As shown in Figure 9 and summarized in Table 5, the lifetime test structures within this second batch of samples processed similarly to Figure 8 were able to consistently deliver excellent passivation qualities for the planar and textured lifetime test structures. In particular, Table 5 shows that structure B (symmetrically planar lifetime test structures with symmetrical hole-selective passivated contacts) was able to again demonstrate an implied-
Comparison of the passivation quality (i.e. (a) effective carrier lifetime at 1015 cm−3 injection level, (b) rear side J0 values and (c) implied-VOC values) when both the electron-selective (thermal-SiOx /poly-Si(n+)) passivated contacts and hole-selective passivated contacts (thermal-SiOx /poly-Si(p+)) are deployed on both solar cell structure A (front-side textured, rear-side planar silicon wafer), lifetime test structure B (symmetrically planar), and lifetime test structure C (symmetrically textured).
Structure | Surface (poly-Si thickness) | Pass. contact type | Total | ||
---|---|---|---|---|---|
A | Front-textured (250 nm) Rear-planar (250 nm) | Front electron-selective Rear hole-selective | 1273 | 43.4 | 688 |
B | Sym.-planar (250 nm) | Hole-selective | 1883 | 39.1 | 696 |
C | Sym.-textured (250 nm) | Electron-selective | 1943 | 28.5 | 701 |
Summary of the average measured passivation quality for both electron-selective and hole-selective passivated contacts deployed on different wafer surfaces.
With a closer look at the key process steps, the key difference between the symmetrical lifetime test structures and the solar cell structures is that the former structures can be done in a one-step diffusion process, while the latter structures would require a series of dielectric masking to achieve single-sided diffused poly-Si layers with different polarities, starting from the higher-temperature requirement first (i.e., boron diffusion toward poly-Si(p+) in this work), followed by the diffusion process with a lower-temperature requirement (i.e., phosphorus diffusion toward poly-Si(n+)). The goal is to reduce the drive-in/out-diffusion of boron dopants from the poly-Si(p+) layer into the silicon bulk which is expected to lead to an increased near-surface recombination and poorer passivation quality, as evident from our measurements as well (see Figure 9). Figure 10 shows a comparison of the ECV profiles done on the same poly-Si(p+) layer in the as-diffused state and after an additional diffusion masking and front-side phosphorus diffusion step. It can be clearly seen in the latter that the boron dopants have out-diffused from the poly-Si(p+) capping layer into the silicon bulk, which is consistent with the reduced passivation quality measured on the solar cell precursors. Unfortunately, this issue is inevitable for our current investigated approach of obtaining the doped silicon capping layers, although the dopant out-diffusion could be better controlled via diffusion recipe optimization.
Measured ECV profile for the poly-Si(p+) region, comparing the as-diffused profile after the first rear-side boron diffusion (i.e., same compared to the lifetime test structure) and the final boron diffusion profile (i.e., after additional steps of masking, the second front-side phosphorus diffusion, and the chemical mask removal process). For the solar cell precursors, the additional high-temperature process step (second diffusion) causes out-diffusion of boron dopants from the poly-Si(p+) layer into the silicon wafer bulk, as evident from ECV measurements.
For a conventional silicon wafer solar cell, suitable dielectric thin films or stacks of thin films (such as SiOx, SiNx, AlOx) would be deposited on the silicon wafer surfaces to serve as anti-reflection/passivation prior to the metallization step. Similarly, in this work, the double-sided passivated contact solar cell precursors shown in Figure 9 were symmetrically capped with PECVD of ∼70-nm-thick SiNx films. The resulting passivation quality before and after additional SiNx capping is plotted in Figure 11 and listed in Table 6.
Measured passivation quality of the deployed double-sided passivated contacts on the solar cell structure sketched in
Structure | Surface (poly-Si thickness) | Pass. contact type | Total | ||
---|---|---|---|---|---|
Before SiNx | Front-textured (250 nm) Rear-planar (250 nm) | Front electron-selective Rear hole-selective | 1500 | 48 | 690 |
After SiNx | Front-textured (250 nm) Rear-planar (250 nm) | Front electron-selective Rear hole-selective | 2400 | 16.5 | 713 |
Summary of the measured passivation quality of a double-sided passivated contact solar cell precursor, before and after additional SiNx capping.
It can be seen from Figure 11 that upon the deposition of an additional symmetrical SiNx capping layer, there is a striking improvement in the pre-metallized solar cell precursors, in which the
Despite the excellent passivation qualities from the developed passivated contacts, one of the key challenges identified for device integration is the issue of parasitic absorption by these highly doped poly-Si capping layers. This issue is found to be more critical when the layers are deployed at the front surface than the rear surface, as simulation studies will show in the later sections. Hence, in order to address the parasitic absorption issue, a thinning of the doped poly-Si thickness is necessary.
Two different experimental approaches have been investigated: (1) applying a slow silicon etch-back technology, thereby thinning down our already well-optimized thick layers, and (2) performing a diffusion re-optimization for ultrathin LPCVD of intrinsic poly-Si layers. The goal is to determine the threshold (lowest thickness) of the poly-Si films necessary to achieve the same excellent passivation quality as the thicker counterparts while reducing the parasitic absorption issue as much as possible.
Using our slow silicon etch (SSE) solution (DIW:KOH (3.5%):NaOCL (63.25%) at 80°C), an etch rate of ∼0.1 nm/s was determined, which was consistently observed for both poly-Si(n+) and poly-Si(p+) capping layers. Figure 12 highlights the influence of the resulting doped poly-Si capping layer thickness on the measured passivation quality.
Influence of the decreasing doped poly-Si capping layer thickness via the slow silicon etch process on the measured (a) minority carrier lifetime τeff and (b) implied-VOC values for symmetrically planar lifetime test structures. Promising results are observed on hole-selective passivated contacts, in which the passivation quality is preserved for a poly-Si(p+) capping layer thickness reduction from a thick ∼250 nm down to a thin ∼3 nm. In contrast, the passivation quality of the electron-selective passivated contacts with poly-Si(n+) capping layer was preserved down to a thickness of ∼70 nm, beyond which there is a drastic drop in passivation quality. The “star” symbol refers to the case where there is no doped poly-Si capping layer (i.e., only the tunnel oxide SiOx layer).
Interestingly, for hole-selective passivated contacts, the passivation quality can be preserved for a poly-Si(p+) thickness from a thick ∼250 nm down to ultrathin layers of approximately ∼3 nm, with measured
One of the alternative approaches to obtain ultrathin poly-Si(n+) layers is to directly deposit an ultrathin intrinsic poly-Si capping layer, followed by a further optimization of the phosphorus diffusion conditions. The goal is to obtain a highly doped thin poly-Si(n+) capping layer which can achieve excellent passivation quality similar to the thicker poly-Si(n+) counterparts while minimizing the in-diffusion of phosphorus dopants into the silicon bulk. To achieve this, ultrathin (∼10 nm) intrinsic LPCVD of poly-Si films was deposited on both symmetrical lifetime test structures (textured and planar) and solar cell precursors (i.e., front-side textured, rear-side planar surfaces), followed by the phosphorus diffusion optimization process as mentioned above. The best results from the optimization process are highlighted in Figure 13 and Table 7.
Excellent passivation quality demonstrated from our in-house developed electron-selective (thermal-SiOx/poly-Si(n+)) passivated contact with thin (∼10 nm) poly-Si(n+) capping layers applied on both (a) symmetrical textured lifetime test structures, with iVOC reaching 686 mV, and (b) symmetrical planar lifetime test structures, with iVOC reaching ∼720 mV, which further improves to 703 and 727 mV, respectively, after an additional standard SiNx capping layer. Good film and doping uniformity can be observed from the PL images for both the symmetrical lifetime test structures and solar cell precursors (i.e., front-side textured, rear-side planar) as shown in (c).
Structure | Surface (poly-Si thickness) | SiNx capped? | Total | ||
---|---|---|---|---|---|
A | Sym. planar (10 nm) | No | 4229 | 16 | 719 |
A | Sym. planar (10 nm) | Yes | 7277 | 10 | 727 |
B | Sym. textured (10 nm) | No | 961 | 67 | 686 |
B | Sym. textured (10 nm) | Yes | 1928 | 31 | 703 |
C | Asym. front txt., rear planar (10 nm) | No | 2982 | 22 | 713 |
C | Asym. front txt, rear planar (10 nm) | Yes | 6557 | Inj. dep | 741 |
Summary of the measured passivation quality parameters (τeff, total J0, implied-VOC) for an electron-selective passivated contact comprising an in situ thermal-SiOx tunnel layer coupled with a thin (∼10 nm) poly-Si(n+) capping layer, evaluated on lifetime test structures which are symmetrically planar (structure A), symmetrically textured (structure B), and front-side textured and rear-side planar solar cell precursors (structure C).
Comparing these results to the thick (∼250 nm) thermal-SiOx/poly-Si(n+) passivated contacts (Table 6), the thin (∼10 nm) thermal-SiOx/poly-Si(n+) passivated contacts on similar lifetime test structures (textured and planar) also exhibited excellent passivation qualities, attaining an implied-
To provide more insights, ECV measurements were performed on the thin poly-Si(n+) layers on both the textured and planar surfaces and compared to the thick reference as shown in Figure 14. The following observations can be made: (i) the thin poly-Si(n+) layer exhibits a higher phosphorus dopant concentration (∼5 × 1020 cm−3) than the thicker counterpart (∼2 × 1020 cm−3); and (ii) the poly-Si(n+) layer on the textured surface exhibits a higher dopants in-diffusion than the planar surface, which could partially explain the lower measured implied-
Comparison of the ECV profile for ∼10-nm-thick poly-Si(n+) layer on both planar and textured silicon surfaces. Additionally included is the ECV profile for a thick poly-Si(n+) capping layer for comparison purpose. A higher dopant in-diffusion is observed for the textured surfaces, which partially explains the lower measured implied-
Similar to the thick poly-Si(n+) capped samples, an additional symmetrical SiNx capping further enhances the overall passivation quality, such that the textured and planar lifetime structures now exhibit an improvement in the implied-
To summarize, we have demonstrated on a textured silicon surface the ability to obtain an excellently passivating SiNx-capped electron-selective passivated contact (thermal-SiOx/poly-Si(n+)) with sufficiently thin poly-Si(n+) thickness (∼10 nm) to reduce the parasitic absorption issue while maintaining excellent passivation qualities (implied-
The excellent results from the earlier sections clearly demonstrate the potential of deploying double-sided passivated contacts for next-generation silicon solar cell concepts, which in this work had been entirely realized on commercially available industrial tools. However, as mentioned earlier, one of the key issues if contact passivation is to be applied front-side also is to minimize parasitic absorption within the highly doped front-side poly-Si capping layer. Highly doped poly-Si is similar to transparent conductive oxide (TCO) layers deployed for silicon heterojunction solar cells, non-zero extinction coefficients, resulting in the inevitable parasitic absorption. This is even more pronounced, if applied front-side, thereby directly reducing the absorbable photogeneration current in the silicon wafer bulk (as the incident light is then first entering the parasitically absorbing poly-Si capping layer before entering the silicon wafer).
Hence, the objective of this section is to utilize an appropriate numerical calculation method to determine the parasitic absorption as a function of the (rear or front side) poly-Si capping layer thickness and then subsequently predict the corresponding solar cell efficiency potential of the correspondingly optimized passivated contact, being rear-side-only or front- and rear-side deployed in a solar cell. To address the above, the simulation program SunSolve™, available on PV Lighthouse [53], was utilized to study the impact of the doped poly-Si capping layer thickness on the maximum absorbable current density within the silicon wafer bulk
To enhance the accuracy of the optical calculations, ellipsometry measurements were performed on all in-house fabricated samples, i.e., measuring our deployed dielectric films (SiNx, SiOx, AlOx) as well as our optimized doped poly-Si capping layers, followed by a fitting and extraction of the wavelength-dependent optical refractive indices (n, k). These wavelength-dependent refractive indices were then imported into the SunSolve™ simulation program for a more realistic prediction of the current loss analysis, based on our own developed contact passivation layers. As an example, Figure 15 shows the fitted wavelength-dependent refractive indices for the doped poly-Si layers in this work, which is further compared to the crystalline silicon reference [73]. As seen, the doped poly-Si layers do exhibit a higher extinction coefficient (k) compared to a c-Si reference within the visible to near-infrared region (400–900 nm). This again indicates that parasitic absorption is inevitable and should be minimized by thickness reduction while not compromising on the passivation quality. Further optimization work should also try to reduce the extinction coefficient of the poly-Si capping layers itself, i.e., by changing its chemical composition.
Optical indices extracted for the doped poly-Si layers in this work, based on ellipsometry measurements and its subsequent fitting by the Tauc-Lorentz model. Also included is the crystalline silicon optical index data for reference. The poly-Si films do exhibit higher extinction coefficient values than the c-Si wafer bulk within the visible to near-infrared regions (400–900 nm), clearly indicating the need to optimize the poly-Si capping layer thickness in order to reduce parasitic absorption.
The current loss analysis results for a rear-side passivated contact solar cell (using SunSolve™) are shown in Figure 16. In order to account for internal back reflection, a local full-area metal contact scheme has been assumed (see Figure 16) (this can be realized by local laser ablation, forming contact openings in the SiNx passivation layer and a subsequent full-area metallization).
Numerically calculated absorbed photogeneration current in the silicon solar cell bulk (Jabsorbed, cell) and the parasitic absorption contributed by the rear-side poly-Si(n+) capping layer (Jabsorbed, parasitic (rear-polySi)), as a function of its thickness from 250 nm down to 0 nm, for a rear-side passivated contact solar cell, adopting a conventional front-side boron-diffused emitter junction, and the investigated rear-side electron-selective passivated contacts (tunnel oxide/poly-Si(n+)). Reducing the rear-side poly-Si(n+) layer thickness leads to a significant reduction on parasitic absorption (up to 0.55 mA cm−2) and a corresponding gain in the photogeneration current Jabsorbed, cell (up to 0.4 mA cm−2). Interestingly, Jabsorbed, cell saturates for a poly-Si(n+) layer thickness lower than 25 nm, despite a further reduction of rear-side parasitic absorption (see text).
It can be seen that for a solar cell with a conventional front-side boron-diffused junction and a rear-side electron-selective passivated contact (thermal-SiOx/poly-Si(n+)), the parasitic absorption arising from the rear-side poly-Si(n+) capping layer can be directly addressed by reducing the rear-side poly-Si film thickness (e.g., the parasitic absorption current loss reduces from 0.55 mA cm−2 for a 250-nm-thick poly-Si(n+) layer to 0.02 mA cm−2 for a 10-nm-thick poly-Si(n+) layer). The reduction in the parasitic absorption directly enhances the potentially absorbable current in the wafer bulk (
Interestingly, it was observed that for a poly-Si capping layer thickness lower than 25 nm, the
Hence, for the purpose of device integration, our numerical findings suggest that when considering tunnel oxide/poly-Si(doped) passivated contacts at the rear surface, it would suffice to shrink down the rear-side poly-Si thickness to 25 nm (thinner layers will not further improve the photogeneration current
Figure 17 presents a pie chart summary for the current loss analysis of the simulated solar cell structure shown in Figure 16, which adopts a rear-side poly-Si(n+) capping layer with an experimentally realizable thickness of 10 nm as mentioned in the earlier sections. Based on this single-sided (rear-side) passivated contact solar cell structure, the parasitic absorption contribution by the rear-side poly-Si(n+) layer leads to a negligible low 0.04% of the total AM1.5G incident current density of 46.32 mA cm−2, amounting to 0.02 mA cm−2 only. The bulk of the incident photon current density is absorbed by the silicon wafer (88.72%), although this could be further enhanced when better front-side anti-reflection coatings are available for deployment (currently, a front-reflected current density loss of 4.66% is calculated for our in-house deployed thin-film AlOx/SiNx anti-reflection stack). The second highest current loss channel is the front-escaped current density at 4.32%. Please note that this loss channel cannot be reduced: Photons which are desired to enter the silicon wafer will also be able to leave it. Actually, the higher the percentage loss due to front surface escape, the better the optical performance of the solar cell. The metal grid at the front and rear accounts for a total current loss of 2.05% based on our in-house available screen designs. Taking all optical current losses into account, the maximum absorbable photon current density in the silicon wafer is ∼41.1 mA cm−2.
Pie chart representing the SunSolve™ current loss analysis for the solar cell structure sketched in
Extending the analysis from a solar cell with a single rear-side-only passivated contact toward double-sided passivated contacts, the same current loss analysis approach was applied to front- and rear-side passivated contact solar cells, exhibiting an optically negligible rear-side capping layer thickness of 3 nm, as experimentally realized. As sketched in Figure 18, this solar cell structure consists of a front-side textured surface with our developed electron-selective (tunnel oxide/poly-Si(n+)) passivated contacts, and a rear-side planar surface with our developed hole-selective (tunnel oxide/poly-Si(p+)) passivated contacts. This is followed by the standard dielectric coatings (SiOx, SiNx, AlOx) at both surfaces to serve both passivation and anti-reflection purposes, prior to the screen-printed fire-through metal contacts at both sides. Adopting an experimentally realizable rear-side poly-Si(p+) capping layer thickness of 3 nm (see earlier section), the influence of the front-side poly-Si capping layer thickness on the
Numerically calculated photon current absorption for a double-sided passivated contact solar cell. The rear-side hole-selective poly-Si(p+) capping layer thickness is fixed at 3 nm, while the front-side electron-selective poly-Si(n+) capping layer thickness is varied from 0 nm to 250 nm. Front-side parasitic within the poly-Si(n+) capping layer (Jabsorbed, parasitic (front poly-Si)) has a severe impact on the absorbable photon current density within the silicon wafer (Jabsorbed, cell).
Accordingly, the pie chart current loss analysis for the double-sided passivated contact solar cell structure depicted in Figure 3 is shown in Figure 19 for the case of an experimentally realizable front-side poly-Si(n+) capping layer thickness of 10 nm and an experimentally realizable rear-side poly-Si(p+) capping layer thickness of 3 nm. Figure 19 shows that the presence of the 10-nm-thick front-side poly-Si(n+) capping layer contributes to a comparatively higher parasitic absorption loss (4.32%) than the rear-side poly-Si(p+) capping layer (0.01%), based on a total incident current density of 46.32 mA cm−2 (AM1.5G spectrum). The remaining potentially absorbable current density within the solar cell bulk stands at ∼85.56% (∼39.6 mA cm−2), which is ∼3.16% lower than a rear-side-only passivated contact scheme. Hence, it is clear that although double-sided passivated contact solar cells could deliver excellent passivation on both sides of the wafer (thereby reaching higher open-circuit voltages
Pie chart representing the SunSolve™ current loss analysis for the double-sided passivated contact solar cell structure sketched in
In earlier sections, the feasibility of the electron-selective and hole-selective passivated contacts has been demonstrated, both on symmetrical lifetime test structures and asymmetrical solar cell precursors as sketched in Figure 11 (in the as-deposited state and after an additional symmetrical SiNx capping). The remaining solar cell fabrication step would be the formation of metal contacts toward these thin-film passivated contacts, without damaging the passivation quality underneath these contacts. As a first attempt, conventional metal contacting schemes, i.e., screen printing, as commonly deployed for conventional silicon solar cells (exhibiting double-sided diffused junctions), were performed on our lifetime and solar cell precursors. In particular, we tested our industrial in-house fire-through and non-fire-through screen-printing pastes, based on Ag, Ag/Al, or Al material formulations. The corresponding results were compared to a nonindustrial research reference contact, deploying thermally evaporated Ag contacts.
In summary, so far, using conventional screen-printing pastes, screen printing works only on comparatively thick poly-Si(n+) layers, i.e., requiring a poly-Si(n+) thickness of 150 nm or larger. So far, it does not work on poly-Si(p+) layers. The SEM results presented in Figure 20 sum up these observations.
SEM images taken for poly-Si(n+) and poly-Si(p+) layers contacted via conventional screen printing, using various commercially available pastes: (i) bifacial fire-through pastes, i.e., Ag paste for contacting n-doped Si and Al paste for contacting p-doped Si, and (ii) non-fire-through Ag/Al pastes, using laser ablation to form local contact openings prior to screen printing. Screen printing works only in case of contacting moderately thick (150–250 nm) electron-extracting poly-Si(n+) capping layers. In all other cases, issues like void formation or a local “punch through” of the metal paste (locally contacting the c-Si wafer instead of the poly-Si capping layer) occur.
(I) A fire-through Ag paste (as conventionally used to contact n-doped silicon material) is able to contact our standard ∼250-nm-thick poly-Si(n+) layers conformably, without any issues, i.e., exhibiting a low contact resistance (13 mΩ cm2) and no void issues or punch-through effects underneath the contact (see Figure 20 (top, left)). The investigated fire-through Ag paste is suitable for rear-side contacting poly-Si(n+) capping layers down to a thickness of 150 nm; however, it fails to contact our ultrathin ∼10-nm poly-Si(n+) capping layer, as outlined in some more detail later.
Deploying industrial screen printing for rear-side-only passivated contact solar cells, we currently reach a solar cell efficiency of 21.7%, using our 250-nm “standard” rear-side SiOx/poly-Si(n+) contact passivation layers (see Figure 21 and Table 8).
(a) Measured I–V curve of our current rear-side passivated contact record efficiency cell, exhibiting a rear-side wet-chemically formed SiOx tunnel layer, a 250-nm poly-Si(n+) capping layer, and a conventionally formed (boron-diffused, AlOx/SiNx passivated and screen printed) front-side contact. (b) The correspondingly measured external/internal quantum efficiency, EQE, IQE, and the measured reflectance for the same cell.
I–V data of the rear-side passivated contact record cell, deploying conventional bifacial screen printing for metallization.
Reducing the rear-side poly-Si(n+) capping layer thickness (separate batch, hereby only reaching 21.3% for the solar cell with the 250-nm-thick poly-Si reference layer), we were able to observe a clear increase in short-circuit current density (see Table 9). By thinning down the rear-side poly-Si(n+) capping layer thickness from 250 nm down to 150 nm, using etch-back technology, we gain ∼0.4 mA cm−2 in short-circuit current density, reaching again a best cell efficiency of 21.7%. Up to a thickness of 150 nm, the poly-Si(n+) thinning did neither significantly affect the open-circuit voltage Voc nor the fill factor of the solar cell (compare Table 8). However, the samples with a 100-nm rear-side poly-Si capping layer exhibit a drop in Voc (∼15 mV). This resulted from a local punch through of the screen-printed metal paste, similar to the SEM image as shown in Figure 20 (top, right).
I–V data of rear-side passivated contact solar cells, with a varying rear-side poly-Si(n+) capping layer thickness.
(II) A fire-through Ag/Al paste (as conventionally used to contact p-doped silicon material) could not contact our standard ∼250-nm-thick poly-Si(p+) layers properly: There are several regions where the paste is observed to consume the poly-Si(p+) layer, causing a thinning of the poly-Si(p+) layer and some local “punch-through” areas (see Figure 20 (top, right)). This in turn leads to local shunting (in case of using an n-type wafer) and to a severe degradation of contact passivation quality, as evident from the final measured cell
This issue can be likely attributed to the presence of the Al alloy within the paste, which is typically responsible for forming the back surface field regions in conventional silicon solar cells. Al alloying is known to partially consume crystalline silicon material: thus, our thin poly-Si(p+) capping layers will be consumed upon contact firing of the screen-printed Ag/Al paste, leading to the just outlined local “punch-through” effects.
(III) A non-fire-through pure Al paste (as conventionally used to contact a p-doped silicon wafer in order to form locally Al-alloyed back-surface-field (BSF) regions within the wafer) was found to create large voids in several regions (see Figure 20 (bottom, right)) and to consume the entire poly-Si(p+) passivated contacts, leading to a drastic drop in contact passivation quality and measured device performance.
It is possible to use femtosecond laser ablation, in order to create damage-free local contact openings (i.e., locally ablating the overlaying SiNx layer without damaging the underlying poly-Si(p+) capping layer). Using a femtosecond laser at an ultraviolet wavelength of 330 nm, the onset of laser fluence for optimized SiNx ablation is 0.08 J cm−2. Within the optimized process window, the lifetime is preserved after laser ablation (as indicated by photoluminescence imaging), and the SiNx is fully ablated (as indicated by optical microscope imaging) (see Figure 22). However, the paste composition of the screen-printing paste has to be altered, in order to enable a subsequent damage-free contacting of our (thick or ultrathin) poly-Si(p+) layers. Corresponding research activities, in cooperation with a paste manufacturer, are currently initiated.
(Left) Sketch of the laser process to locally laser ablate SiNx on top of thin-film poly-Si, in order to form local contact openings for further metallization, aiming at conventional screen printing, using a non-fire-through paste. (Right) Photoluminescence images and optical microscope images inside the opening, taken for a screened range of laser fluence.
(IV) As expected, our research reference thermal evaporated Ag contacts were able to form damage-free conformal low resistivity contacts to our developed SiOx/poly-Si(p+) and ALD-AlOx/poly-Si(p+) passivated contacts, thereby enabling a nonindustrial full-area reference contact on hole-extracting poly-Si(p+) capping layers [34].
As just outlined above, using our conventional screen-printing metal pastes and fast-firing conditions, thus far we were not able to successfully contact hole-extracting poly-Si(p+) layers as well as ultrathin 10-nm electron-extracting poly-Si(n+) layers. Thus, a closer attention toward (i) an optimization of the metal paste itself, i.e., tuning its chemical composition, and (ii) an optimization of the fast-firing conditions, applied after screen printing, in order to form a low resistivity contact, is necessary.
To address the latter, an asymmetric lifetime test structure, featuring a textured front surface and a planar rear surface, symmetrically passivated contact by our ultrathin (∼10 nm) electron-selective, thermal-SiOx/poly-Si(n+) passivated contact layers, was utilized. The passivation quality of these samples in the as-deposited state was measured first, followed by a symmetrical deposition of the passivation/anti-reflective SiNx film, and its passivation quality was remeasured. Then, the samples were subjected to different fast-firing peak temperatures (650, 660, 680, 700, 720, 740, 760°C), thereby mimicking different fast-firing conditions after screen printing, and the resulting final passivation quality was remeasured again (see Figure 23).
Comparison of the measured passivation quality for the asymmetrical lifetime test structures comprising a textured front and a planar rear surface, passivated with electron-extracting thermal-SiOx/10 nm-poly-Si(n+) passivated contacts, in the as deposited state, after additional SiNx deposition and after a fast-firing belt furnace temperature treatment. The straight lines are a guide to the eyes.
For our ultrathin 10-nm SiOx/poly-Si(n+) contact passivation layers, a severe degradation of passivation quality after fast-firing is observed (see Figure 23). In the as-deposited state, our asymmetrical lifetime test structures with electron-selective passivated contacts were exhibiting good passivation quality with average
Thus, more efforts to render our ultrathin contact passivation layers firing stable, i.e., by deploying lower peak firing temperatures and/or changing the chemical composition of the ultrathin LPCVD of poly-Si capping layers, are necessary. Furthermore, efforts to optimize the composition of the screen-printing paste itself, in order to be able to successfully contact ultrathin poly-Si layers using screen printing, will be undertaken. An alternative work plan is to investigate low-temperature inline plating, as a possible approach to contact our ultrathin SiOx/poly-Si contact passivation layers.
As already indicated in the introduction part, we can determine a practical solar cell efficiency potential of our investigated solar cell structures, adopting either a rear-side-only passivated contact scheme or a double-sided passivated contact scheme. Using Brendel’s model [54], and explicitly considering measured front-side contact resistance and contact recombination parameters (i.e., the combined front-side saturation current density
Firstly, Figure 24 shows a comparison of solar cells with a rear-side-only passivated contact scheme, comprising a conventional front-side textured surface with a boron-diffused emitter, passivated by a standard AlOx/SiNx double-layer anti-reflection coating and metallized by conventional screen printing (using a fire-through Ag-Al paste). The rear side composes of our developed electron-selective passivated contacts (thermal-SiOx/poly-Si(n+)), utilizing an experimentally achievable ∼10-nm-thick poly-Si(n+) layer and either a full-area Ag contact or a bifacial Ag contact with a contact area fraction similar to the front side (6%). For the efficiency potential prediction, a conservative, industrial feasible
Practical solar cell efficiency potential for a rear-side-only passivated contact solar cell (as a function of the quality of the rear-side passivated contact, i.e., its recombination current density J0, rear and its contact resistance Rc, rear), adopting a conventional front-side boron-diffused emitter and a rear-side electron-selective SiOx/poly-Si(n+) passivated contact, realized either in a full-area contact configuration or in a bifacial contact configuration. The measured current recombination densities J0, rear and the correspondingly measured contact resistances Rc, rear of our developed rear-side SiOx/poly-Si(n+) electron-extracting passivated contacts are inserted within the iso-efficiency plot (blue dot, full-area contact; black square, bifacial contact). The corresponding practical solar cell efficiency potential using our developed SiOx/poly-Si(n+) passivated contacts is 22.3%, if a full-area rear-side contact is deployed, and 22.5%, if a bifacial contact is deployed.
Regarding our developed rear-side SiOx/poly-Si(n+) contact passivation layers, the corresponding properties have been measured explicitly: Utilizing the symmetrical planar lifetime test structures with electron-selective passivated contacts discussed in earlier sections, the single-sided
As discussed in Brendel’s paper [54], in case of a rear-side bifacial contact, the recombination current density
The corresponding calculation of the practical efficiency potential for double-sided passivated contact solar cells is shown in Figure 25. As discussed in earlier sections, this solar cell concept features an optimized solar cell architecture considering our experimental finding, i.e., featuring a textured front surface with an electron-selective passivated contact (thermal-SiOx/poly-Si(n+)) and a planar rear surface with a hole-selective passivated contact (thermal-SiOx/poly-Si(p+)). The front surface of these cells is capped by a double-layer anti-reflection/passivation coating (SiOx/SiNx) and assumed to be contacted via screen-printed fire-through Ag contacts. The rear-side hole-selective passivated contacts are assumed to be either contacted by a full-area Ag contact or to be capped by a double-layer anti-reflection/passivation coating (AlOx/SiNx), forming a screen-printed bifacial fire-through Ag-Al contact.
Practical solar cell efficiency potential for a double-sided passivated contact solar cell (as a function of the quality of the rear-side hole-extracting passivated contact, i.e., its recombination current density J0, rear and its contact resistance Rc, rear), adopting an ultrathin 10-nm electron-selective SiOx/poly-Si(n+) passivated contact on the textured front-side and a hole-selective SiOx/poly-Si(p+) passivated contact on the planar rear-side, realized either in a full-area contact configuration or in a bifacial contact configuration. The adopted J0, metal, J0, non-metal, and Rc values are based on own measurements (see text). The estimated current recombination density J0, rear and the correspondingly estimated contact resistance Rc, rear of our developed hole-extracting passivated contact (assuming that the observed screen-printing issues have been solved) are inserted within the iso-efficiency plot (blue dot, full-area contact; black square, bifacial contact). The corresponding practical solar cell efficiency potential using our developed electron- and hole-extracting SiOx/poly-Si passivated contacts is 22.3%, if a full-area rear-side contact is deployed, and 23.2%, if a bifacial contact is deployed.
Accordingly, in order to equate the rear-side
Comparing a front-side electron-extracting passivated contact to a conventionally applied front-side hole-extracting diffused contact (front-side boron-diffused emitter, passivated with ALOx/SiNx and metallized by bifacial screen printing) greatly improves the front surface passivation quality, reducing the
Again, the bifacial contact scheme appears more advantageous than deploying full-area rear-side contacts, exhibiting a significant 0.9% absolute (4% relative) increase in practical efficiency potential (analyzing double-sided passivated contact solar cells). If we compare bifacial silicon solar cells with a double-sided passivated contact scheme to rear-side-only passivated contact scheme, a respectable gain in cell efficiency by 0.7% absolute (∼3% relative) is attainable. Interestingly, if we compare silicon solar cells which utilized full-area rear-side metal contacts, the practical cell efficiency potential for the double-sided passivated contact cell appears to be comparable to the rear-side-only passivated contact cell (both efficiency potentials are in the range of 22.3%). Given comparable
One suggestion to further improve the cell efficiency is to utilize laser-assisted local openings into the rear-side dielectrics (as demonstrated in Figure 22) and apply a full-area non-fire-through metal contact, which is expected to improve the rear interface reflectance and the corresponding collectable photocurrents.
To summarize, the net surface passivation quality on both the solar cell front-side and rear-side can be significantly improved by incorporating our in-house developed carrier-selective passivated contacts. A double-sided passivated contact scheme is predicted to deliver a ∼3% relative improvement of solar cell performance, as compared to a rear-side-only passivated contact scheme. Using a rear-side-only passivated contact scheme, i.e., deploying our in-house developed SiOx/poly-Si(n+) passivated contact layers and applying conventional bifacial screen printing, we have realized a solar cell efficiency of 21.7% (exhibiting a practical efficiency potential of 22.5%, using our standard boron-diffused front-side contact). The still prevailing challenge is to realize an industrial feasible metallization scheme on hole-extracting poly-Si(p+) contact passivation layers, i.e., to develop suitable pastes to contact p-doped poly-Si by means of screen printing.
In this work, we demonstrate the potential of incorporating our in-house developed industrial relevant electron-selective (thermal-SiOx/poly-Si(n+)) and hole-selective (thermal-SiOx/poly-Si(p+)) passivated contacts into double-sided passivated contact solar cells. Using measured properties of our developed contact passivation layers (i.e., determining the recombination current density
Our methodology of developing/optimizing (ultrathin) contact passivation layers is outlined as follows: First, we were comparing different tunnel oxides for their suitability to form passivated contacts when capped with highly doped poly-Si, i.e., we analyzed ultrathin (<1.5 nm) industrial relevant SiOx tunnel layers (i.e., wet-chemically formed silicon oxide (wet-SiOx), UV/ozone photo-oxidation-formed silicon oxides (ozone-SiOx), and in situ formed thermal silicon oxides, using low-pressure chemical vapor deposition (LPCVD) (thermal-SiOx)). Combining specifically designed lifetime and dark I–V test structures, we were able to extract the single-sided saturation current density
Subsequently, an asymmetric, front-side textured electron-extracting, rear-side planar hole-extracting passivated lifetime structure was processed, reaching an
However, contacting hole-extracting poly-Si(p+) layers or ultrathin electron-extracting poly-Si(n+) layers is a challenge. Trying to contact hole-extracting poly-Si(p+) layers by screen printing, using conventional fire-through Ag/Al pastes (as used to contact p-doped silicon material), we observe several local “punch-through” contact regions, where the paste is completely consuming the underlying poly-Si(p+) capping layer, causing a severe degradation of contact passivation quality underneath the metal contact (i.e., there is no more contact passivation). This issue can be attributed to local aluminum alloying processes, which take place during fast-firing of Al containing screen-printing pastes: Al alloying is known to partially consume crystalline silicon material; thus, our thin poly-Si(p+) capping layers will be consumed upon contact firing, leading to the just outlined local “punch-through” effects. Therefore, the chemical composition of the screen-printing paste itself has to be altered, in order to enable a subsequent damage-free contacting of our (thick or ultrathin) poly-Si(p+) capping layers. Corresponding research activities, in cooperation with a paste manufacturer, are currently initiated.
Furthermore, it seems that our current ultrathin, 10-nm electron-extracting poly-Si(n+) layers are not firing stable, especially if deploying high peak firing temperatures (they still do outperform conventionally diffused front-side contacts, though). Interestingly, this is not the case for our “standard” 250-nm-thick layers. ECV measurements confirm that after contact firing (fast-firing in order to form low resistivity contacts), the dopants within the poly-Si(n+) capping layer have out-diffused into the silicon wafer bulk, thereby effectively reducing field-effect passivation and thus the observed implied open-circuit voltage of the samples after contact firing. Thus, more efforts to render our ultrathin contact passivation layers firing stable, i.e., by deploying lower peak firing temperatures and/or changing the chemical composition of the ultrathin LPCVD of poly-Si capping layers itself, are necessary.
An alternative work plan is to investigate low-temperature metallization approaches, like inline plating.
Nevertheless, despite still having to solve a suited industrial metallization scheme for our ultrathin (≤ 10-nm) in-house developed industrial electron- and hole-selective SiOx/poly-Si/SiNx passivated contact layers, due to their excellent passivation and contact resistance properties, these layers have a huge potential to get device integrated into a double-sided passivated contact solar cell architecture, which exhibits a practical efficiency potential of 23.2%, using our measured layer properties for a corresponding numerical prediction. Double-sided passivated contact solar cells deploying bifacial contacts are definitely able to outperform rear-side-only passivated contact solar cells in the near future.
This research work was supported by the EIRP-07 project “Passivated contacts for high-efficiency silicon wafer based solar cells” NRF2014EWT-EIRP001-006, in a joint collaboration between SERIS and REC Solar Pte. Ltd.
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After obtaining a Master's degree in Mechanical Engineering, he continued his PhD studies in Robotics at the Vienna University of Technology. Here he worked as a robotic researcher with the university's Intelligent Manufacturing Systems Group as well as a guest researcher at various European universities, including the Swiss Federal Institute of Technology Lausanne (EPFL). During this time he published more than 20 scientific papers, gave presentations, served as a reviewer for major robotic journals and conferences and most importantly he co-founded and built the International Journal of Advanced Robotic Systems- world's first Open Access journal in the field of robotics. Starting this journal was a pivotal point in his career, since it was a pathway to founding IntechOpen - Open Access publisher focused on addressing academic researchers needs. Alex is a personification of IntechOpen key values being trusted, open and entrepreneurial. Today his focus is on defining the growth and development strategy for the company.",institutionString:null,institution:{name:"TU Wien",country:{name:"Austria"}}},{id:"19816",title:"Prof.",name:"Alexander",middleName:null,surname:"Kokorin",slug:"alexander-kokorin",fullName:"Alexander Kokorin",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/19816/images/1607_n.jpg",biography:"Alexander I. Kokorin: born: 1947, Moscow; DSc., PhD; Principal Research Fellow (Research Professor) of Department of Kinetics and Catalysis, N. Semenov Institute of Chemical Physics, Russian Academy of Sciences, Moscow.\r\nArea of research interests: physical chemistry of complex-organized molecular and nanosized systems, including polymer-metal complexes; the surface of doped oxide semiconductors. He is an expert in structural, absorptive, catalytic and photocatalytic properties, in structural organization and dynamic features of ionic liquids, in magnetic interactions between paramagnetic centers. The author or co-author of 3 books, over 200 articles and reviews in scientific journals and books. He is an actual member of the International EPR/ESR Society, European Society on Quantum Solar Energy Conversion, Moscow House of Scientists, of the Board of Moscow Physical Society.",institutionString:null,institution:{name:"Semenov Institute of Chemical Physics",country:{name:"Russia"}}},{id:"62389",title:"PhD.",name:"Ali Demir",middleName:null,surname:"Sezer",slug:"ali-demir-sezer",fullName:"Ali Demir Sezer",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/62389/images/3413_n.jpg",biography:"Dr. Ali Demir Sezer has a Ph.D. from Pharmaceutical Biotechnology at the Faculty of Pharmacy, University of Marmara (Turkey). He is the member of many Pharmaceutical Associations and acts as a reviewer of scientific journals and European projects under different research areas such as: drug delivery systems, nanotechnology and pharmaceutical biotechnology. Dr. Sezer is the author of many scientific publications in peer-reviewed journals and poster communications. Focus of his research activity is drug delivery, physico-chemical characterization and biological evaluation of biopolymers micro and nanoparticles as modified drug delivery system, and colloidal drug carriers (liposomes, nanoparticles etc.).",institutionString:null,institution:{name:"Marmara University",country:{name:"Turkey"}}},{id:"61051",title:"Prof.",name:"Andrea",middleName:null,surname:"Natale",slug:"andrea-natale",fullName:"Andrea Natale",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"100762",title:"Prof.",name:"Andrea",middleName:null,surname:"Natale",slug:"andrea-natale",fullName:"Andrea Natale",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"St David's Medical Center",country:{name:"United States of America"}}},{id:"107416",title:"Dr.",name:"Andrea",middleName:null,surname:"Natale",slug:"andrea-natale",fullName:"Andrea Natale",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Texas Cardiac Arrhythmia",country:{name:"United States of America"}}},{id:"64434",title:"Dr.",name:"Angkoon",middleName:null,surname:"Phinyomark",slug:"angkoon-phinyomark",fullName:"Angkoon Phinyomark",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/64434/images/2619_n.jpg",biography:"My name is Angkoon Phinyomark. I received a B.Eng. degree in Computer Engineering with First Class Honors in 2008 from Prince of Songkla University, Songkhla, Thailand, where I received a Ph.D. degree in Electrical Engineering. My research interests are primarily in the area of biomedical signal processing and classification notably EMG (electromyography signal), EOG (electrooculography signal), and EEG (electroencephalography signal), image analysis notably breast cancer analysis and optical coherence tomography, and rehabilitation engineering. I became a student member of IEEE in 2008. During October 2011-March 2012, I had worked at School of Computer Science and Electronic Engineering, University of Essex, Colchester, Essex, United Kingdom. In addition, during a B.Eng. I had been a visiting research student at Faculty of Computer Science, University of Murcia, Murcia, Spain for three months.\n\nI have published over 40 papers during 5 years in refereed journals, books, and conference proceedings in the areas of electro-physiological signals processing and classification, notably EMG and EOG signals, fractal analysis, wavelet analysis, texture analysis, feature extraction and machine learning algorithms, and assistive and rehabilitative devices. I have several computer programming language certificates, i.e. Sun Certified Programmer for the Java 2 Platform 1.4 (SCJP), Microsoft Certified Professional Developer, Web Developer (MCPD), Microsoft Certified Technology Specialist, .NET Framework 2.0 Web (MCTS). I am a Reviewer for several refereed journals and international conferences, such as IEEE Transactions on Biomedical Engineering, IEEE Transactions on Industrial Electronics, Optic Letters, Measurement Science Review, and also a member of the International Advisory Committee for 2012 IEEE Business Engineering and Industrial Applications and 2012 IEEE Symposium on Business, Engineering and Industrial Applications.",institutionString:null,institution:{name:"Joseph Fourier University",country:{name:"France"}}},{id:"55578",title:"Dr.",name:"Antonio",middleName:null,surname:"Jurado-Navas",slug:"antonio-jurado-navas",fullName:"Antonio Jurado-Navas",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRisIQAS/Profile_Picture_1626166543950",biography:"Antonio Jurado-Navas received the M.S. degree (2002) and the Ph.D. degree (2009) in Telecommunication Engineering, both from the University of Málaga (Spain). He first worked as a consultant at Vodafone-Spain. From 2004 to 2011, he was a Research Assistant with the Communications Engineering Department at the University of Málaga. In 2011, he became an Assistant Professor in the same department. From 2012 to 2015, he was with Ericsson Spain, where he was working on geo-location\ntools for third generation mobile networks. Since 2015, he is a Marie-Curie fellow at the Denmark Technical University. His current research interests include the areas of mobile communication systems and channel modeling in addition to atmospheric optical communications, adaptive optics and statistics",institutionString:null,institution:{name:"University of Malaga",country:{name:"Spain"}}}],filtersByRegion:[{group:"region",caption:"North America",value:1,count:6597},{group:"region",caption:"Middle and South America",value:2,count:5902},{group:"region",caption:"Africa",value:3,count:2400},{group:"region",caption:"Asia",value:4,count:12537},{group:"region",caption:"Australia and Oceania",value:5,count:1006},{group:"region",caption:"Europe",value:6,count:17560}],offset:12,limit:12,total:132762},chapterEmbeded:{data:{}},editorApplication:{success:null,errors:{}},ofsBooks:{filterParams:{hasNoEditors:"1",sort:"dateEndThirdStepPublish",topicId:"25"},books:[{type:"book",id:"12085",title:"Techniques in Animal Breeding",subtitle:null,isOpenForSubmission:!0,hash:"64404e5103ac7b2d953efa6de19775f1",slug:null,bookSignature:"",coverURL:"https://cdn.intechopen.com/books/images_new/12085.jpg",editedByType:null,editors:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"12086",title:"Cattle Diseases",subtitle:null,isOpenForSubmission:!0,hash:"e2e8c3574dc8508689de774c3965b25d",slug:null,bookSignature:"",coverURL:"https://cdn.intechopen.com/books/images_new/12086.jpg",editedByType:null,editors:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}],filtersByTopic:[{group:"topic",caption:"Agricultural and Biological Sciences",value:5,count:42},{group:"topic",caption:"Biochemistry, Genetics and Molecular Biology",value:6,count:12},{group:"topic",caption:"Business, Management and Economics",value:7,count:7},{group:"topic",caption:"Chemistry",value:8,count:17},{group:"topic",caption:"Computer and Information Science",value:9,count:18},{group:"topic",caption:"Earth and Planetary Sciences",value:10,count:18},{group:"topic",caption:"Engineering",value:11,count:46},{group:"topic",caption:"Environmental Sciences",value:12,count:7},{group:"topic",caption:"Immunology and Microbiology",value:13,count:11},{group:"topic",caption:"Materials Science",value:14,count:14},{group:"topic",caption:"Mathematics",value:15,count:6},{group:"topic",caption:"Medicine",value:16,count:107},{group:"topic",caption:"Nanotechnology and Nanomaterials",value:17,count:2},{group:"topic",caption:"Neuroscience",value:18,count:7},{group:"topic",caption:"Pharmacology, Toxicology and Pharmaceutical Science",value:19,count:11},{group:"topic",caption:"Physics",value:20,count:4},{group:"topic",caption:"Psychology",value:21,count:8},{group:"topic",caption:"Robotics",value:22,count:2},{group:"topic",caption:"Social Sciences",value:23,count:32},{group:"topic",caption:"Technology",value:24,count:1},{group:"topic",caption:"Veterinary Medicine and Science",value:25,count:2}],offset:12,limit:12,total:2},popularBooks:{featuredBooks:[],offset:0,limit:12,total:null},hotBookTopics:{hotBooks:[],offset:0,limit:12,total:null},publish:{},publishingProposal:{success:null,errors:{}},books:{featuredBooks:[],latestBooks:[]},subject:{topic:{id:"851",title:"Green Chemistry",slug:"environmental-sciences-environmental-chemistry-green-chemistry",parent:{id:"127",title:"Environmental Chemistry",slug:"environmental-sciences-environmental-chemistry"},numberOfBooks:1,numberOfSeries:0,numberOfAuthorsAndEditors:31,numberOfWosCitations:47,numberOfCrossrefCitations:20,numberOfDimensionsCitations:53,videoUrl:null,fallbackUrl:null,description:null},booksByTopicFilter:{topicId:"851",sort:"-publishedDate",limit:12,offset:0},booksByTopicCollection:[{type:"book",id:"5170",title:"Green Nanotechnology",subtitle:"Overview and Further Prospects",isOpenForSubmission:!1,hash:"e2d4dc551be023ba3525e6126076af90",slug:"green-nanotechnology-overview-and-further-prospects",bookSignature:"Marcelo L. Larramendy and Sonia Soloneski",coverURL:"https://cdn.intechopen.com/books/images_new/5170.jpg",editedByType:"Edited by",editors:[{id:"14764",title:"Dr.",name:"Marcelo L.",middleName:null,surname:"Larramendy",slug:"marcelo-l.-larramendy",fullName:"Marcelo L. Larramendy"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}],booksByTopicTotal:1,seriesByTopicCollection:[],seriesByTopicTotal:0,mostCitedChapters:[{id:"50106",doi:"10.5772/62327",title:"“Green” Quantum Dots: Basics, Green Synthesis, and Nanotechnological Applications",slug:"-green-quantum-dots-basics-green-synthesis-and-nanotechnological-applications",totalDownloads:3771,totalCrossrefCites:9,totalDimensionsCites:19,abstract:"Nanotechnological development of new materials involves the discovery or design of materials at small length scales with controlled physical and chemical properties than can be tuned or modified in function of their applications. One of the most suitable examples of nanoparticles used for this purpose are quantum dots, a type of colloidal fluorescent semiconducting nanocrystalline material that has the possibility, due to its unique optical and electronic properties, to be used in numerous technological applications such as biosensing, in vivo imaging techniques, photovoltaics, nanomedicine, molecular pathology, and drug delivery. Thus, there are almost endless possibilities for quantum dots materials. In spite of the fast advance in the search of quantum dots with better nanomaterial performance, environmentally benign and sustainable production is still lacking. Although the use of these materials is developing promptly, there is increasing concern that these materials might pose potential risks to human health. Herein, we discuss principal properties of quantum dots, including their functional architecture and toxicity, and review the main studies about “green” quantum dots synthesis to be aligned with green nanotechnology approach for nontoxic, cleaner, safer, and more responsible processes. The organometallic colloidal synthesis and the aqueous colloidal synthesis, as well as their drawbacks and benefits, are conferred. Recent advances in technological and biological quantum dots–based applications are also discussed in this chapter.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Carlos A. Martínez Bonilla and Vladimir V. Kouznetsov",authors:[{id:"105180",title:"Prof.",name:"Vladimir V.",middleName:"V.",surname:"Kouznetsov",slug:"vladimir-v.-kouznetsov",fullName:"Vladimir V. Kouznetsov"},{id:"179817",title:"M.Sc.",name:"Carlos A.",middleName:"Andrés",surname:"Martínez Bonilla",slug:"carlos-a.-martinez-bonilla",fullName:"Carlos A. Martínez Bonilla"}]},{id:"50214",doi:"10.5772/62620",title:"TiO2 Nanostructures and Nanocomposites for Sustainable Photocatalytic Water Purification",slug:"tio2-nanostructures-and-nanocomposites-for-sustainable-photocatalytic-water-purification",totalDownloads:2263,totalCrossrefCites:3,totalDimensionsCites:12,abstract:"Water, together with energy and food, has been addressed as one of the main urgent problems of humanity. The conventional wastewater treatments suffer some limitations related to the effectiveness in decontamination (mechanical filtration), in the heavy use of chemicals (chlorination), or in elevation of operational costs and energy requirements (desalination and reverse osmosis). In this sense, new materials such as nanocomposites may overcome these issues taking advantage of the peculiar properties of materials at nanoscale. Research on novel nanotechnologies must bring advances in order to contrast and prevent water scarcity and pollution. In order to be effective, these nanotechnologies should run at low operational cost, even in places unequipped by strong infrastructures and in concert with conventional cheap methodologies.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Giuseppe Cacciato, Massimo Zimbone, Francesco Ruffino and Maria\nGrazia Grimaldi",authors:[{id:"178880",title:"Ph.D.",name:"Francesco",middleName:null,surname:"Ruffino",slug:"francesco-ruffino",fullName:"Francesco Ruffino"},{id:"180334",title:"Dr.",name:"Giuseppe",middleName:null,surname:"Cacciato",slug:"giuseppe-cacciato",fullName:"Giuseppe Cacciato"},{id:"180335",title:"Dr.",name:"Massimo",middleName:null,surname:"Zimbone",slug:"massimo-zimbone",fullName:"Massimo Zimbone"},{id:"180336",title:"Prof.",name:"Maria Grazia",middleName:null,surname:"Grimaldi",slug:"maria-grazia-grimaldi",fullName:"Maria Grazia Grimaldi"}]},{id:"50705",doi:"10.5772/63314",title:"Metal Nanoparticles as Emerging Green Catalysts",slug:"metal-nanoparticles-as-emerging-green-catalysts",totalDownloads:3246,totalCrossrefCites:2,totalDimensionsCites:8,abstract:"Green nanotechnology is defined as the technology applied for building clean technology by which one can reduce the potential risks of environment and also improve human health conditions. It is linked with the implementation of products of nanotechnology and its process of manufacturing. Green nanotechnology synthesizes new nanoproducts with improved properties in such a way that they can substitute some of the existing low‐quality products. The main motive of developing new nanoproducts is to enhance sustainability and also to make them more environment friendly. In particular, nanoscale materials (e.g., nanoparticles) can be defined as those having characteristic length scale lying within the nanometric range, that is, in the range between one and several hundreds of nanometers. Within this length scale, the properties of matter are sufficiently different from individual atoms/molecules or from bulk materials. The primary objective of this chapter is to provide comprehensive overview about metal nanoparticles (MNPs) and its application as emerging green catalysts. This chapter contains six sections in total. Section 1 starts with a general introduction, recent progress, and brief summary of the application of MNPs as green catalyst. Section 2 reviews the preparation and characterization of supported metal nanoparticles for a wide range of catalytic applications. Section 3 presents the catalytic properties of supported metal nanoparticles. Section 4 describes briefly some of the most commonly reported supported MNPs in different green catalytic applications. Section 5 concentrates on our own results that related to the application of supported MNPs in catalysis. In this section, the oxidation of benzyl alcohol to benzaldehyde, the production of adipic acid from cyclohexane, the photodegradation of dyes using green route will be discussed. Finally, Section 6 describes the summary of main points and also presents an outlook of the application of MNPs in green chemistry.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Ahmad Alshammari, V. Narayana Kalevaru and Andreas Martin",authors:[{id:"178547",title:"Dr.",name:"Ahmad",middleName:null,surname:"Alshammari",slug:"ahmad-alshammari",fullName:"Ahmad Alshammari"},{id:"180753",title:"Dr.",name:"V. Narayana",middleName:null,surname:"Kalevaru",slug:"v.-narayana-kalevaru",fullName:"V. Narayana Kalevaru"},{id:"180804",title:"Dr.",name:"Andreas",middleName:null,surname:"Martin",slug:"andreas-martin",fullName:"Andreas Martin"}]},{id:"50074",doi:"10.5772/62316",title:"Nanostructured TiO2 Layers for Photovoltaic and Gas Sensing Applications",slug:"nanostructured-tio2-layers-for-photovoltaic-and-gas-sensing-applications",totalDownloads:2105,totalCrossrefCites:3,totalDimensionsCites:6,abstract:"Titanium dioxide (TiO2) has been an important material for decades, combining numerous attractive properties in terms of economy (low price, large availability) or ecology (non-toxic), as well as broad physical and chemical possibilities. In the last few years, the development of nanotechnologies offered new opportunities, not only in an academic perspective but also with a view to many applications with particular reference to the environment. This chapter focuses on the many ways that allow to tailor and organize TiO2 crystallites at the nanometre scale to make the most of this amazing material in the field of photovoltaics and gas sensing.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"André Decroly, Arnaud Krumpmann, Marc Debliquy and Driss\nLahem",authors:[{id:"108357",title:"Dr.",name:"Marc",middleName:null,surname:"Debliquy",slug:"marc-debliquy",fullName:"Marc Debliquy"},{id:"156323",title:"Dr.",name:"Driss",middleName:null,surname:"Lahem",slug:"driss-lahem",fullName:"Driss Lahem"},{id:"179585",title:"Associate Prof.",name:"André",middleName:null,surname:"Decroly",slug:"andre-decroly",fullName:"André Decroly"},{id:"179653",title:"MSc.",name:"Arnaud",middleName:null,surname:"Krumpmann",slug:"arnaud-krumpmann",fullName:"Arnaud Krumpmann"}]},{id:"50087",doi:"10.5772/62240",title:"Friccohesity and Tentropy: New Models of Molecular Sciences",slug:"friccohesity-and-tentropy-new-models-of-molecular-sciences",totalDownloads:1697,totalCrossrefCites:1,totalDimensionsCites:3,abstract:"Understanding and developing new molecules in chemical sciences have been great thrust areas of research, not only to develop new synthetic methods or reaction mechanisms of new and greener experimental conditions but also to know what are the new molecule science and what are the new models which can track their new role in chemical processes and also their applications in allied interdisciplinary sciences. The SAR (structure-activity relationship) and STAR (structure-thermodynamics activity relationship) have been the most intimate theories in understanding and finding unique applications of the new molecules. Initially, simple molecules are the focus; however, proteins, hemoglobin, starch, and certain metallic complexes are also in the focus but as natural chemicals; but for past few decades, a lot of focus has been on synthesizing new complex molecules to make them suitable for varieties of applications such as solar, catalysts, biosensors, and others. Hence, it has been essential for focusing on structural sciences of the chemical substances. Dendrimers have been the invention of 1990s in the areas of biocomplexes, biomaterials which are hot thrust areas in molecular interaction engineering to focus on intramolecular potential for industrial applications. Thus, the molecule’s internal structure signifies the various scientific components for playing or making their best use in materials sciences, semiconductor, spintronics, photonics, electronics, etc. Therefore, the molecule’s interacting response with other molecules becomes cohesive or kinetic in nature or whether it induces structuredness or weakens the binding forces and allows more and more kinetic movement or the motion is noted or defined by friccohesity as it is expressed as frictional and cohesive forces. Thus, the friccohesity is a dual forces theory which deals with frictional and cohesive forces together and determined with Survismeter using Mansingh equation molecules [1–3].",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Man Singh",authors:[{id:"24553",title:"Prof.",name:"Man",middleName:null,surname:"Singh",slug:"man-singh",fullName:"Man Singh"}]}],mostDownloadedChaptersLast30Days:[{id:"50106",title:"“Green” Quantum Dots: Basics, Green Synthesis, and Nanotechnological Applications",slug:"-green-quantum-dots-basics-green-synthesis-and-nanotechnological-applications",totalDownloads:3775,totalCrossrefCites:9,totalDimensionsCites:19,abstract:"Nanotechnological development of new materials involves the discovery or design of materials at small length scales with controlled physical and chemical properties than can be tuned or modified in function of their applications. One of the most suitable examples of nanoparticles used for this purpose are quantum dots, a type of colloidal fluorescent semiconducting nanocrystalline material that has the possibility, due to its unique optical and electronic properties, to be used in numerous technological applications such as biosensing, in vivo imaging techniques, photovoltaics, nanomedicine, molecular pathology, and drug delivery. Thus, there are almost endless possibilities for quantum dots materials. In spite of the fast advance in the search of quantum dots with better nanomaterial performance, environmentally benign and sustainable production is still lacking. Although the use of these materials is developing promptly, there is increasing concern that these materials might pose potential risks to human health. Herein, we discuss principal properties of quantum dots, including their functional architecture and toxicity, and review the main studies about “green” quantum dots synthesis to be aligned with green nanotechnology approach for nontoxic, cleaner, safer, and more responsible processes. The organometallic colloidal synthesis and the aqueous colloidal synthesis, as well as their drawbacks and benefits, are conferred. Recent advances in technological and biological quantum dots–based applications are also discussed in this chapter.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Carlos A. Martínez Bonilla and Vladimir V. Kouznetsov",authors:[{id:"105180",title:"Prof.",name:"Vladimir V.",middleName:"V.",surname:"Kouznetsov",slug:"vladimir-v.-kouznetsov",fullName:"Vladimir V. Kouznetsov"},{id:"179817",title:"M.Sc.",name:"Carlos A.",middleName:"Andrés",surname:"Martínez Bonilla",slug:"carlos-a.-martinez-bonilla",fullName:"Carlos A. Martínez Bonilla"}]},{id:"50705",title:"Metal Nanoparticles as Emerging Green Catalysts",slug:"metal-nanoparticles-as-emerging-green-catalysts",totalDownloads:3247,totalCrossrefCites:2,totalDimensionsCites:8,abstract:"Green nanotechnology is defined as the technology applied for building clean technology by which one can reduce the potential risks of environment and also improve human health conditions. It is linked with the implementation of products of nanotechnology and its process of manufacturing. Green nanotechnology synthesizes new nanoproducts with improved properties in such a way that they can substitute some of the existing low‐quality products. The main motive of developing new nanoproducts is to enhance sustainability and also to make them more environment friendly. In particular, nanoscale materials (e.g., nanoparticles) can be defined as those having characteristic length scale lying within the nanometric range, that is, in the range between one and several hundreds of nanometers. Within this length scale, the properties of matter are sufficiently different from individual atoms/molecules or from bulk materials. The primary objective of this chapter is to provide comprehensive overview about metal nanoparticles (MNPs) and its application as emerging green catalysts. This chapter contains six sections in total. Section 1 starts with a general introduction, recent progress, and brief summary of the application of MNPs as green catalyst. Section 2 reviews the preparation and characterization of supported metal nanoparticles for a wide range of catalytic applications. Section 3 presents the catalytic properties of supported metal nanoparticles. Section 4 describes briefly some of the most commonly reported supported MNPs in different green catalytic applications. Section 5 concentrates on our own results that related to the application of supported MNPs in catalysis. In this section, the oxidation of benzyl alcohol to benzaldehyde, the production of adipic acid from cyclohexane, the photodegradation of dyes using green route will be discussed. Finally, Section 6 describes the summary of main points and also presents an outlook of the application of MNPs in green chemistry.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Ahmad Alshammari, V. Narayana Kalevaru and Andreas Martin",authors:[{id:"178547",title:"Dr.",name:"Ahmad",middleName:null,surname:"Alshammari",slug:"ahmad-alshammari",fullName:"Ahmad Alshammari"},{id:"180753",title:"Dr.",name:"V. Narayana",middleName:null,surname:"Kalevaru",slug:"v.-narayana-kalevaru",fullName:"V. Narayana Kalevaru"},{id:"180804",title:"Dr.",name:"Andreas",middleName:null,surname:"Martin",slug:"andreas-martin",fullName:"Andreas Martin"}]},{id:"49331",title:"Metal Complexes Immobilized on Magnetic Nanoparticles",slug:"metal-complexes-immobilized-on-magnetic-nanoparticles",totalDownloads:2096,totalCrossrefCites:1,totalDimensionsCites:2,abstract:"The reusability of valuable catalysts in organic reaction without change in properties is known as an important feature in the evolution of green processes. The imobilization of metal catalysts on magnetic nanoparticles makes them recoverable and can be used as building blocks for the fabrication of various functional systems, which are applied in several fields such as catalysis, environmental remediation magnetic resonance imaging, data storage, and biotechnology. Applying magnetic nanoparticles in organic reaction as a scaffold for the immobilization of metal complexes is reviewed as well as the improvement of the methods of production and applying catalysts with magnetic properties in organic reaction.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Seyed Mohsen Sadeghzadeh and Mehdi Mogharabi",authors:[{id:"175879",title:"Dr.",name:"Seyed Mohsen",middleName:null,surname:"Sadeghzadeh",slug:"seyed-mohsen-sadeghzadeh",fullName:"Seyed Mohsen Sadeghzadeh"},{id:"191799",title:"Dr.",name:"Mehdi",middleName:null,surname:"Mogharabi",slug:"mehdi-mogharabi",fullName:"Mehdi Mogharabi"}]},{id:"50132",title:"Recent Highlights in Green Oxidative Chemical Processes Applied to Steroid Chemistry",slug:"recent-highlights-in-green-oxidative-chemical-processes-applied-to-steroid-chemistry",totalDownloads:2379,totalCrossrefCites:0,totalDimensionsCites:0,abstract:"Steroids and their oxidation products are widely distributed in living organisms and are important intermediates for the synthesis of many biologically active molecules. Due to their pharmacological and synthetic relevance, several oxidative chemical processes for the functionalization of the steroid nucleus have been developed. Green chemistry principles have been incorporated in some oxidative transformations of steroids, allowing significant advances in synthetic chemistry applied to these compounds. This chapter presents a selection of relevant applications of pharmaceutical green chemistry to steroid’s oxidative processes. Special emphasis is given to catalytic processes encompassing heterogeneous nanocatalysts, whose application in this context is increasing over the past years. This chapter is organized according to the reaction type that includes alcohol oxidation, epoxidation of alkenes, and allylic oxidation of alkenes to enones, among other relevant oxidative transformations. Biocatalytic oxidative methods applied to steroid synthesis are not included in this review.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"Samuel M. Silvestre, M. Manuel C. Silva and Jorge A. R. Salvador",authors:[{id:"69976",title:"Prof.",name:"Jorge António Ribeiro",middleName:null,surname:"Salvador",slug:"jorge-antonio-ribeiro-salvador",fullName:"Jorge António Ribeiro Salvador"},{id:"157541",title:"Prof.",name:"Samuel",middleName:null,surname:"Silvestre",slug:"samuel-silvestre",fullName:"Samuel Silvestre"},{id:"185027",title:"Prof.",name:"Maria Manuel Cruz",middleName:null,surname:"Silva",slug:"maria-manuel-cruz-silva",fullName:"Maria Manuel Cruz Silva"}]},{id:"50074",title:"Nanostructured TiO2 Layers for Photovoltaic and Gas Sensing Applications",slug:"nanostructured-tio2-layers-for-photovoltaic-and-gas-sensing-applications",totalDownloads:2105,totalCrossrefCites:3,totalDimensionsCites:6,abstract:"Titanium dioxide (TiO2) has been an important material for decades, combining numerous attractive properties in terms of economy (low price, large availability) or ecology (non-toxic), as well as broad physical and chemical possibilities. In the last few years, the development of nanotechnologies offered new opportunities, not only in an academic perspective but also with a view to many applications with particular reference to the environment. This chapter focuses on the many ways that allow to tailor and organize TiO2 crystallites at the nanometre scale to make the most of this amazing material in the field of photovoltaics and gas sensing.",book:{id:"5170",slug:"green-nanotechnology-overview-and-further-prospects",title:"Green Nanotechnology",fullTitle:"Green Nanotechnology - Overview and Further Prospects"},signatures:"André Decroly, Arnaud Krumpmann, Marc Debliquy and Driss\nLahem",authors:[{id:"108357",title:"Dr.",name:"Marc",middleName:null,surname:"Debliquy",slug:"marc-debliquy",fullName:"Marc Debliquy"},{id:"156323",title:"Dr.",name:"Driss",middleName:null,surname:"Lahem",slug:"driss-lahem",fullName:"Driss Lahem"},{id:"179585",title:"Associate Prof.",name:"André",middleName:null,surname:"Decroly",slug:"andre-decroly",fullName:"André Decroly"},{id:"179653",title:"MSc.",name:"Arnaud",middleName:null,surname:"Krumpmann",slug:"arnaud-krumpmann",fullName:"Arnaud Krumpmann"}]}],onlineFirstChaptersFilter:{topicId:"851",limit:6,offset:0},onlineFirstChaptersCollection:[],onlineFirstChaptersTotal:0},preDownload:{success:null,errors:{}},subscriptionForm:{success:null,errors:{}},aboutIntechopen:{},privacyPolicy:{},peerReviewing:{},howOpenAccessPublishingWithIntechopenWorks:{},sponsorshipBooks:{sponsorshipBooks:[],offset:0,limit:8,total:null},allSeries:{pteSeriesList:[],lsSeriesList:[],hsSeriesList:[],sshSeriesList:[],testimonialsList:[]},series:{item:{id:"11",title:"Biochemistry",doi:"10.5772/intechopen.72877",issn:"2632-0983",scope:"Biochemistry, the study of chemical transformations occurring within living organisms, impacts all areas of life sciences, from molecular crystallography and genetics to ecology, medicine, and population biology. Biochemistry examines macromolecules - proteins, nucleic acids, carbohydrates, and lipids – and their building blocks, structures, functions, and interactions. Much of biochemistry is devoted to enzymes, proteins that catalyze chemical reactions, enzyme structures, mechanisms of action and their roles within cells. Biochemistry also studies small signaling molecules, coenzymes, inhibitors, vitamins, and hormones, which play roles in life processes. Biochemical experimentation, besides coopting classical chemistry methods, e.g., chromatography, adopted new techniques, e.g., X-ray diffraction, electron microscopy, NMR, radioisotopes, and developed sophisticated microbial genetic tools, e.g., auxotroph mutants and their revertants, fermentation, etc. More recently, biochemistry embraced the ‘big data’ omics systems. Initial biochemical studies have been exclusively analytic: dissecting, purifying, and examining individual components of a biological system; in the apt words of Efraim Racker (1913 –1991), “Don’t waste clean thinking on dirty enzymes.” Today, however, biochemistry is becoming more agglomerative and comprehensive, setting out to integrate and describe entirely particular biological systems. The ‘big data’ metabolomics can define the complement of small molecules, e.g., in a soil or biofilm sample; proteomics can distinguish all the comprising proteins, e.g., serum; metagenomics can identify all the genes in a complex environment, e.g., the bovine rumen. This Biochemistry Series will address the current research on biomolecules and the emerging trends with great promise.",coverUrl:"https://cdn.intechopen.com/series/covers/11.jpg",latestPublicationDate:"May 18th, 2022",hasOnlineFirst:!0,numberOfPublishedBooks:27,editor:{id:"31610",title:"Dr.",name:"Miroslav",middleName:null,surname:"Blumenberg",slug:"miroslav-blumenberg",fullName:"Miroslav Blumenberg",profilePictureURL:"https://mts.intechopen.com/storage/users/31610/images/system/31610.jpg",biography:"Miroslav Blumenberg, Ph.D., was born in Subotica and received his BSc in Belgrade, Yugoslavia. He completed his Ph.D. at MIT in Organic Chemistry; he followed up his Ph.D. with two postdoctoral study periods at Stanford University. Since 1983, he has been a faculty member of the RO Perelman Department of Dermatology, NYU School of Medicine, where he is codirector of a training grant in cutaneous biology. Dr. Blumenberg’s research is focused on the epidermis, expression of keratin genes, transcription profiling, keratinocyte differentiation, inflammatory diseases and cancers, and most recently the effects of the microbiome on the skin. He has published more than 100 peer-reviewed research articles and graduated numerous Ph.D. and postdoctoral students.",institutionString:null,institution:{name:"New York University Langone Medical Center",institutionURL:null,country:{name:"United States of America"}}},editorTwo:null,editorThree:null},subseries:{paginationCount:4,paginationItems:[{id:"14",title:"Cell and Molecular Biology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/14.jpg",isOpenForSubmission:!0,editor:{id:"165627",title:"Dr.",name:"Rosa María",middleName:null,surname:"Martínez-Espinosa",slug:"rosa-maria-martinez-espinosa",fullName:"Rosa María Martínez-Espinosa",profilePictureURL:"https://mts.intechopen.com/storage/users/165627/images/system/165627.jpeg",biography:"Dr. Rosa María Martínez-Espinosa has been a Spanish Full Professor since 2020 (Biochemistry and Molecular Biology) and is currently Vice-President of International Relations and Cooperation development and leader of the research group 'Applied Biochemistry” (University of Alicante, Spain). Other positions she has held at the university include Vice-Dean of Master Programs, Vice-Dean of the Degree in Biology and Vice-Dean for Mobility and Enterprise and Engagement at the Faculty of Science (University of Alicante). She received her Bachelor in Biology in 1998 (University of Alicante) and her PhD in 2003 (Biochemistry, University of Alicante). She undertook post-doctoral research at the University of East Anglia (Norwich, U.K. 2004-2005; 2007-2008).\nHer multidisciplinary research focuses on investigating archaea and their potential applications in biotechnology. She has an H-index of 21. She has authored one patent and has published more than 70 indexed papers and around 60 book chapters.\nShe has contributed to more than 150 national and international meetings during the last 15 years. Her research interests include archaea metabolism, enzymes purification and characterization, gene regulation, carotenoids and bioplastics production, antioxidant\ncompounds, waste water treatments, and brines bioremediation.\nRosa María’s other roles include editorial board member for several journals related\nto biochemistry, reviewer for more than 60 journals (biochemistry, molecular biology, biotechnology, chemistry and microbiology) and president of several organizing committees in international meetings related to the N-cycle or respiratory processes.",institutionString:null,institution:{name:"University of Alicante",institutionURL:null,country:{name:"Spain"}}},editorTwo:null,editorThree:null},{id:"15",title:"Chemical Biology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/15.jpg",isOpenForSubmission:!0,editor:{id:"441442",title:"Dr.",name:"Şükrü",middleName:null,surname:"Beydemir",slug:"sukru-beydemir",fullName:"Şükrü Beydemir",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y00003GsUoIQAV/Profile_Picture_1634557147521",biography:"Dr. Şükrü Beydemir obtained a BSc in Chemistry in 1995 from Yüzüncü Yıl University, MSc in Biochemistry in 1998, and PhD in Biochemistry in 2002 from Atatürk University, Turkey. He performed post-doctoral studies at Max-Planck Institute, Germany, and University of Florence, Italy in addition to making several scientific visits abroad. He currently works as a Full Professor of Biochemistry in the Faculty of Pharmacy, Anadolu University, Turkey. Dr. Beydemir has published over a hundred scientific papers spanning protein biochemistry, enzymology and medicinal chemistry, reviews, book chapters and presented several conferences to scientists worldwide. He has received numerous publication awards from various international scientific councils. He serves in the Editorial Board of several international journals. Dr. Beydemir is also Rector of Bilecik Şeyh Edebali University, Turkey.",institutionString:null,institution:{name:"Anadolu University",institutionURL:null,country:{name:"Turkey"}}},editorTwo:{id:"13652",title:"Prof.",name:"Deniz",middleName:null,surname:"Ekinci",slug:"deniz-ekinci",fullName:"Deniz Ekinci",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002aYLT1QAO/Profile_Picture_1634557223079",biography:"Dr. Deniz Ekinci obtained a BSc in Chemistry in 2004, MSc in Biochemistry in 2006, and PhD in Biochemistry in 2009 from Atatürk University, Turkey. He studied at Stetson University, USA, in 2007-2008 and at the Max Planck Institute of Molecular Cell Biology and Genetics, Germany, in 2009-2010. Dr. Ekinci currently works as a Full Professor of Biochemistry in the Faculty of Agriculture and is the Head of the Enzyme and Microbial Biotechnology Division, Ondokuz Mayıs University, Turkey. He is a member of the Turkish Biochemical Society, American Chemical Society, and German Genetics society. Dr. Ekinci published around ninety scientific papers, reviews and book chapters, and presented several conferences to scientists. He has received numerous publication awards from several scientific councils. 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He worked on the structure-function relationships of glycoconjugates and his main project was the investigations on the biological roles of the de-N-glycosylation enzymes (Endo-N-acetyl-β-D-glucosaminidase and peptide-N4-(N-acetyl-β-glucosaminyl) asparagine amidase). From 2002 he contributes to the understanding of the Blood-brain barrier functioning using proteomics approaches. He has published more than 70 papers. His teaching areas are energy metabolism and regulation, integration and organ specialization and metabolic adaptation.",institutionString:null,institution:{name:"Artois University",institutionURL:null,country:{name:"France"}}},editorTwo:null,editorThree:null},{id:"18",title:"Proteomics",coverUrl:"https://cdn.intechopen.com/series_topics/covers/18.jpg",isOpenForSubmission:!0,editor:{id:"200689",title:"Prof.",name:"Paolo",middleName:null,surname:"Iadarola",slug:"paolo-iadarola",fullName:"Paolo Iadarola",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bSCl8QAG/Profile_Picture_1623568118342",biography:"Paolo Iadarola graduated with a degree in Chemistry from the University of Pavia (Italy) in July 1972. He then worked as an Assistant Professor at the Faculty of Science of the same University until 1984. In 1985, Prof. Iadarola became Associate Professor at the Department of Biology and Biotechnologies of the University of Pavia and retired in October 2017. Since then, he has been working as an Adjunct Professor in the same Department at the University of Pavia. His research activity during the first years was primarily focused on the purification and structural characterization of enzymes from animal and plant sources. During this period, Prof. Iadarola familiarized himself with the conventional techniques used in column chromatography, spectrophotometry, manual Edman degradation, and electrophoresis). Since 1995, he has been working on: i) the determination in biological fluids (serum, urine, bronchoalveolar lavage, sputum) of proteolytic activities involved in the degradation processes of connective tissue matrix, and ii) on the identification of biological markers of lung diseases. In this context, he has developed and validated new methodologies (e.g., Capillary Electrophoresis coupled to Laser-Induced Fluorescence, CE-LIF) whose application enabled him to determine both the amounts of biochemical markers (Desmosines) in urine/serum of patients affected by Chronic Obstructive Pulmonary Disease (COPD) and the activity of proteolytic enzymes (Human Neutrophil Elastase, Cathepsin G, Pseudomonas aeruginosa elastase) in sputa of these patients. More recently, Prof. Iadarola was involved in developing techniques such as two-dimensional electrophoresis coupled to liquid chromatography/mass spectrometry (2DE-LC/MS) for the proteomic analysis of biological fluids aimed at the identification of potential biomarkers of different lung diseases. He is the author of about 150 publications (According to Scopus: H-Index: 23; Total citations: 1568- According to WOS: H-Index: 20; Total Citations: 1296) of peer-reviewed international journals. He is a Consultant Reviewer for several journals, including the Journal of Chromatography A, Journal of Chromatography B, Plos ONE, Proteomes, International Journal of Molecular Science, Biotech, Electrophoresis, and others. He is also Associate Editor of Biotech.",institutionString:null,institution:{name:"University of Pavia",institutionURL:null,country:{name:"Italy"}}},editorTwo:{id:"201414",title:"Dr.",name:"Simona",middleName:null,surname:"Viglio",slug:"simona-viglio",fullName:"Simona Viglio",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRKDHQA4/Profile_Picture_1630402531487",biography:"Simona Viglio is an Associate Professor of Biochemistry at the Department of Molecular Medicine at the University of Pavia. She has been working since 1995 on the determination of proteolytic enzymes involved in the degradation process of connective tissue matrix and on the identification of biological markers of lung diseases. She gained considerable experience in developing and validating new methodologies whose applications allowed her to determine both the amount of biomarkers (Desmosine and Isodesmosine) in the urine of patients affected by COPD, and the activity of proteolytic enzymes (HNE, Cathepsin G, Pseudomonas aeruginosa elastase) in the sputa of these patients. Simona Viglio was also involved in research dealing with the supplementation of amino acids in patients with brain injury and chronic heart failure. She is presently engaged in the development of 2-DE and LC-MS techniques for the study of proteomics in biological fluids. The aim of this research is the identification of potential biomarkers of lung diseases. She is an author of about 90 publications (According to Scopus: H-Index: 23; According to WOS: H-Index: 20) on peer-reviewed journals, a member of the “Società Italiana di Biochimica e Biologia Molecolare,“ and a Consultant Reviewer for International Journal of Molecular Science, Journal of Chromatography A, COPD, Plos ONE and Nutritional Neuroscience.",institutionString:null,institution:{name:"University of Pavia",institutionURL:null,country:{name:"Italy"}}},editorThree:null}]},overviewPageOFChapters:{paginationCount:49,paginationItems:[{id:"80495",title:"Iron in Cell Metabolism and Disease",doi:"10.5772/intechopen.101908",signatures:"Eeka Prabhakar",slug:"iron-in-cell-metabolism-and-disease",totalDownloads:1,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Iron Metabolism - Iron a Double‐Edged Sword",coverURL:"https://cdn.intechopen.com/books/images_new/10842.jpg",subseries:{id:"17",title:"Metabolism"}}},{id:"81799",title:"Cross Talk of Purinergic and Immune Signaling: Implication in Inflammatory and Pathogenic Diseases",doi:"10.5772/intechopen.104978",signatures:"Richa Rai",slug:"cross-talk-of-purinergic-and-immune-signaling-implication-in-inflammatory-and-pathogenic-diseases",totalDownloads:7,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Purinergic System",coverURL:"https://cdn.intechopen.com/books/images_new/10801.jpg",subseries:{id:"17",title:"Metabolism"}}},{id:"81764",title:"Involvement of the Purinergic System in Cell Death in Models of Retinopathies",doi:"10.5772/intechopen.103935",signatures:"Douglas Penaforte Cruz, Marinna Garcia Repossi and Lucianne Fragel Madeira",slug:"involvement-of-the-purinergic-system-in-cell-death-in-models-of-retinopathies",totalDownloads:4,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Purinergic System",coverURL:"https://cdn.intechopen.com/books/images_new/10801.jpg",subseries:{id:"17",title:"Metabolism"}}},{id:"81756",title:"Alteration of Cytokines Level and Oxidative Stress Parameters in COVID-19",doi:"10.5772/intechopen.104950",signatures:"Marija Petrusevska, Emilija Atanasovska, Dragica Zendelovska, Aleksandar Eftimov and Katerina Spasovska",slug:"alteration-of-cytokines-level-and-oxidative-stress-parameters-in-covid-19",totalDownloads:8,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Chemokines Updates",coverURL:"https://cdn.intechopen.com/books/images_new/11672.jpg",subseries:{id:"18",title:"Proteomics"}}}]},overviewPagePublishedBooks:{paginationCount:27,paginationItems:[{type:"book",id:"7006",title:"Biochemistry and Health Benefits of Fatty Acids",subtitle:null,coverURL:"https://cdn.intechopen.com/books/images_new/7006.jpg",slug:"biochemistry-and-health-benefits-of-fatty-acids",publishedDate:"December 19th 2018",editedByType:"Edited by",bookSignature:"Viduranga Waisundara",hash:"c93a00abd68b5eba67e5e719f67fd20b",volumeInSeries:1,fullTitle:"Biochemistry and Health Benefits of Fatty Acids",editors:[{id:"194281",title:"Dr.",name:"Viduranga Y.",middleName:null,surname:"Waisundara",slug:"viduranga-y.-waisundara",fullName:"Viduranga Y. Waisundara",profilePictureURL:"https://mts.intechopen.com/storage/users/194281/images/system/194281.jpg",biography:"Dr. Viduranga Waisundara obtained her Ph.D. in Food Science and Technology from the Department of Chemistry, National University of Singapore, in 2010. She was a lecturer at Temasek Polytechnic, Singapore from July 2009 to March 2013. She relocated to her motherland of Sri Lanka and spearheaded the Functional Food Product Development Project at the National Institute of Fundamental Studies from April 2013 to October 2016. She was a senior lecturer on a temporary basis at the Department of Food Technology, Faculty of Technology, Rajarata University of Sri Lanka. She is currently Deputy Principal of the Australian College of Business and Technology – Kandy Campus, Sri Lanka. She is also the Global Harmonization Initiative (GHI) Ambassador to Sri Lanka.",institutionString:"Australian College of Business & Technology",institution:null}]},{type:"book",id:"6820",title:"Keratin",subtitle:null,coverURL:"https://cdn.intechopen.com/books/images_new/6820.jpg",slug:"keratin",publishedDate:"December 19th 2018",editedByType:"Edited by",bookSignature:"Miroslav Blumenberg",hash:"6def75cd4b6b5324a02b6dc0359896d0",volumeInSeries:2,fullTitle:"Keratin",editors:[{id:"31610",title:"Dr.",name:"Miroslav",middleName:null,surname:"Blumenberg",slug:"miroslav-blumenberg",fullName:"Miroslav Blumenberg",profilePictureURL:"https://mts.intechopen.com/storage/users/31610/images/system/31610.jpg",biography:"Miroslav Blumenberg, Ph.D., was born in Subotica and received his BSc in Belgrade, Yugoslavia. He completed his Ph.D. at MIT in Organic Chemistry; he followed up his Ph.D. with two postdoctoral study periods at Stanford University. Since 1983, he has been a faculty member of the RO Perelman Department of Dermatology, NYU School of Medicine, where he is codirector of a training grant in cutaneous biology. Dr. Blumenberg’s research is focused on the epidermis, expression of keratin genes, transcription profiling, keratinocyte differentiation, inflammatory diseases and cancers, and most recently the effects of the microbiome on the skin. He has published more than 100 peer-reviewed research articles and graduated numerous Ph.D. and postdoctoral students.",institutionString:null,institution:{name:"New York University Langone Medical Center",institutionURL:null,country:{name:"United States of America"}}}]},{type:"book",id:"7978",title:"Vitamin A",subtitle:null,coverURL:"https://cdn.intechopen.com/books/images_new/7978.jpg",slug:"vitamin-a",publishedDate:"May 15th 2019",editedByType:"Edited by",bookSignature:"Leila Queiroz Zepka, Veridiana Vera de Rosso and Eduardo Jacob-Lopes",hash:"dad04a658ab9e3d851d23705980a688b",volumeInSeries:3,fullTitle:"Vitamin A",editors:[{id:"261969",title:"Dr.",name:"Leila",middleName:null,surname:"Queiroz Zepka",slug:"leila-queiroz-zepka",fullName:"Leila Queiroz Zepka",profilePictureURL:"https://mts.intechopen.com/storage/users/261969/images/system/261969.png",biography:"Prof. Dr. Leila Queiroz Zepka is currently an associate professor in the Department of Food Technology and Science, Federal University of Santa Maria, Brazil. She has more than fifteen years of teaching and research experience. She has published more than 550 scientific publications/communications, including 15 books, 50 book chapters, 100 original research papers, 380 research communications in national and international conferences, and 12 patents. She is a member of the editorial board of five journals and acts as a reviewer for several national and international journals. Her research interests include microalgal biotechnology with an emphasis on microalgae-based products.",institutionString:"Universidade Federal de Santa Maria",institution:{name:"Universidade Federal de Santa Maria",institutionURL:null,country:{name:"Brazil"}}}]},{type:"book",id:"7953",title:"Bioluminescence",subtitle:"Analytical Applications and Basic Biology",coverURL:"https://cdn.intechopen.com/books/images_new/7953.jpg",slug:"bioluminescence-analytical-applications-and-basic-biology",publishedDate:"September 25th 2019",editedByType:"Edited by",bookSignature:"Hirobumi Suzuki",hash:"3a8efa00b71abea11bf01973dc589979",volumeInSeries:4,fullTitle:"Bioluminescence - Analytical Applications and Basic Biology",editors:[{id:"185746",title:"Dr.",name:"Hirobumi",middleName:null,surname:"Suzuki",slug:"hirobumi-suzuki",fullName:"Hirobumi Suzuki",profilePictureURL:"https://mts.intechopen.com/storage/users/185746/images/system/185746.png",biography:"Dr. Hirobumi Suzuki received his Ph.D. in 1997 from Tokyo Metropolitan University, Japan, where he studied firefly phylogeny and the evolution of mating systems. He is especially interested in the genetic differentiation pattern and speciation process that correlate to the flashing pattern and mating behavior of some fireflies in Japan. He then worked for Olympus Corporation, a Japanese manufacturer of optics and imaging products, where he was involved in the development of luminescence technology and produced a bioluminescence microscope that is currently being used for gene expression analysis in chronobiology, neurobiology, and developmental biology. Dr. Suzuki currently serves as a visiting researcher at Kogakuin University, Japan, and also a vice president of the Japan Firefly Society.",institutionString:"Kogakuin University",institution:null}]}]},openForSubmissionBooks:{},onlineFirstChapters:{},subseriesFiltersForOFChapters:[],publishedBooks:{},subseriesFiltersForPublishedBooks:[],publicationYearFilters:[],authors:{paginationCount:148,paginationItems:[{id:"165328",title:"Dr.",name:"Vahid",middleName:null,surname:"Asadpour",slug:"vahid-asadpour",fullName:"Vahid Asadpour",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/165328/images/system/165328.jpg",biography:"Vahid Asadpour, MS, Ph.D., is currently with the Department of Research and Evaluation, Kaiser Permanente Southern California. He has both an MS and Ph.D. in Biomedical Engineering. He was previously a research scientist at the University of California Los Angeles (UCLA) and visiting professor and researcher at the University of North Dakota. He is currently working in artificial intelligence and its applications in medical signal processing. In addition, he is using digital signal processing in medical imaging and speech processing. Dr. Asadpour has developed brain-computer interfacing algorithms and has published books, book chapters, and several journal and conference papers in this field and other areas of intelligent signal processing. He has also designed medical devices, including a laser Doppler monitoring system.",institutionString:"Kaiser Permanente Southern California",institution:null},{id:"169608",title:"Prof.",name:"Marian",middleName:null,surname:"Găiceanu",slug:"marian-gaiceanu",fullName:"Marian Găiceanu",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/169608/images/system/169608.png",biography:"Prof. Dr. Marian Gaiceanu graduated from the Naval and Electrical Engineering Faculty, Dunarea de Jos University of Galati, Romania, in 1997. He received a Ph.D. (Magna Cum Laude) in Electrical Engineering in 2002. Since 2017, Dr. Gaiceanu has been a Ph.D. supervisor for students in Electrical Engineering. He has been employed at Dunarea de Jos University of Galati since 1996, where he is currently a professor. Dr. Gaiceanu is a member of the National Council for Attesting Titles, Diplomas and Certificates, an expert of the Executive Agency for Higher Education, Research Funding, and a member of the Senate of the Dunarea de Jos University of Galati. He has been the head of the Integrated Energy Conversion Systems and Advanced Control of Complex Processes Research Center, Romania, since 2016. He has conducted several projects in power converter systems for electrical drives, power quality, PEM and SOFC fuel cell power converters for utilities, electric vehicles, and marine applications with the Department of Regulation and Control, SIEI S.pA. (2002–2004) and the Polytechnic University of Turin, Italy (2002–2004, 2006–2007). He is a member of the Institute of Electrical and Electronics Engineers (IEEE) and cofounder-member of the IEEE Power Electronics Romanian Chapter. He is a guest editor at Energies and an academic book editor for IntechOpen. He is also a member of the editorial boards of the Journal of Electrical Engineering, Electronics, Control and Computer Science and Sustainability. Dr. Gaiceanu has been General Chairman of the IEEE International Symposium on Electrical and Electronics Engineering in the last six editions.",institutionString:'"Dunarea de Jos" University of Galati',institution:{name:'"Dunarea de Jos" University of Galati',country:{name:"Romania"}}},{id:"4519",title:"Prof.",name:"Jaydip",middleName:null,surname:"Sen",slug:"jaydip-sen",fullName:"Jaydip Sen",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/4519/images/system/4519.jpeg",biography:"Jaydip Sen is associated with Praxis Business School, Kolkata, India, as a professor in the Department of Data Science. His research areas include security and privacy issues in computing and communication, intrusion detection systems, machine learning, deep learning, and artificial intelligence in the financial domain. He has more than 200 publications in reputed international journals, refereed conference proceedings, and 20 book chapters in books published by internationally renowned publishing houses, such as Springer, CRC press, IGI Global, etc. Currently, he is serving on the editorial board of the prestigious journal Frontiers in Communications and Networks and in the technical program committees of a number of high-ranked international conferences organized by the IEEE, USA, and the ACM, USA. He has been listed among the top 2% of scientists in the world for the last three consecutive years, 2019 to 2021 as per studies conducted by the Stanford University, USA.",institutionString:"Praxis Business School",institution:null},{id:"320071",title:"Dr.",name:"Sidra",middleName:null,surname:"Mehtab",slug:"sidra-mehtab",fullName:"Sidra Mehtab",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y00002v6KHoQAM/Profile_Picture_1584512086360",biography:"Sidra Mehtab has completed her BS with honors in Physics from Calcutta University, India in 2018. She has done MS in Data Science and Analytics from Maulana Abul Kalam Azad University of Technology (MAKAUT), Kolkata, India in 2020. Her research areas include Econometrics, Time Series Analysis, Machine Learning, Deep Learning, Artificial Intelligence, and Computer and Network Security with a particular focus on Cyber Security Analytics. Ms. Mehtab has published seven papers in international conferences and one of her papers has been accepted for publication in a reputable international journal. She has won the best paper awards in two prestigious international conferences – BAICONF 2019, and ICADCML 2021, organized in the Indian Institute of Management, Bangalore, India in December 2019, and SOA University, Bhubaneswar, India in January 2021. Besides, Ms. Mehtab has also published two book chapters in two books. Seven of her book chapters will be published in a volume shortly in 2021 by Cambridge Scholars’ Press, UK. Currently, she is working as the joint editor of two edited volumes on Time Series Analysis and Forecasting to be published in the first half of 2021 by an international house. Currently, she is working as a Data Scientist with an MNC in Delhi, India.",institutionString:"NSHM College of Management and Technology",institution:null},{id:"226240",title:"Dr.",name:"Andri Irfan",middleName:null,surname:"Rifai",slug:"andri-irfan-rifai",fullName:"Andri Irfan Rifai",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/226240/images/7412_n.jpg",biography:"Andri IRFAN is a Senior Lecturer of Civil Engineering and Planning. He completed the PhD at the Universitas Indonesia & Universidade do Minho with Sandwich Program Scholarship from the Directorate General of Higher Education and LPDP scholarship. He has been teaching for more than 19 years and much active to applied his knowledge in the project construction in Indonesia. His research interest ranges from pavement management system to advanced data mining techniques for transportation engineering. He has published more than 50 papers in journals and 2 books.",institutionString:null,institution:{name:"Universitas Internasional Batam",country:{name:"Indonesia"}}},{id:"314576",title:"Dr.",name:"Ibai",middleName:null,surname:"Laña",slug:"ibai-lana",fullName:"Ibai Laña",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/314576/images/system/314576.jpg",biography:"Dr. Ibai Laña works at TECNALIA as a data analyst. He received his Ph.D. in Artificial Intelligence from the University of the Basque Country (UPV/EHU), Spain, in 2018. He is currently a senior researcher at TECNALIA. His research interests fall within the intersection of intelligent transportation systems, machine learning, traffic data analysis, and data science. He has dealt with urban traffic forecasting problems, applying machine learning models and evolutionary algorithms. He has experience in origin-destination matrix estimation or point of interest and trajectory detection. Working with large volumes of data has given him a good command of big data processing tools and NoSQL databases. He has also been a visiting scholar at the Knowledge Engineering and Discovery Research Institute, Auckland University of Technology.",institutionString:"TECNALIA Research & Innovation",institution:{name:"Tecnalia",country:{name:"Spain"}}},{id:"314575",title:"Dr.",name:"Jesus",middleName:null,surname:"L. Lobo",slug:"jesus-l.-lobo",fullName:"Jesus L. Lobo",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/314575/images/system/314575.png",biography:"Dr. Jesús López is currently based in Bilbao (Spain) working at TECNALIA as Artificial Intelligence Research Scientist. In most cases, a project idea or a new research line needs to be investigated to see if it is good enough to take into production or to focus on it. That is exactly what he does, diving into Machine Learning algorithms and technologies to help TECNALIA to decide whether something is great in theory or will actually impact on the product or processes of its projects. So, he is expert at framing experiments, developing hypotheses, and proving whether they’re true or not, in order to investigate fundamental problems with a longer time horizon. He is also able to design and develop PoCs and system prototypes in simulation. He has participated in several national and internacional R&D projects.\n\nAs another relevant part of his everyday research work, he usually publishes his findings in reputed scientific refereed journals and international conferences, occasionally acting as reviewer and Programme Commitee member. Concretely, since 2018 he has published 9 JCR (8 Q1) journal papers, 9 conference papers (e.g. ECML PKDD 2021), and he has co-edited a book. He is also active in popular science writing data science stories for reputed blogs (KDNuggets, TowardsDataScience, Naukas). Besides, he has recently embarked on mentoring programmes as mentor, and has also worked as data science trainer.",institutionString:"TECNALIA Research & Innovation",institution:{name:"Tecnalia",country:{name:"Spain"}}},{id:"103779",title:"Prof.",name:"Yalcin",middleName:null,surname:"Isler",slug:"yalcin-isler",fullName:"Yalcin Isler",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRyQ8QAK/Profile_Picture_1628834958734",biography:"Yalcin Isler (1971 - Burdur / Turkey) received the B.Sc. degree in the Department of Electrical and Electronics Engineering from Anadolu University, Eskisehir, Turkey, in 1993, the M.Sc. degree from the Department of Electronics and Communication Engineering, Suleyman Demirel University, Isparta, Turkey, in 1996, the Ph.D. degree from the Department of Electrical and Electronics Engineering, Dokuz Eylul University, Izmir, Turkey, in 2009, and the Competence of Associate Professorship from the Turkish Interuniversity Council in 2019.\n\nHe was Lecturer at Burdur Vocational School in Suleyman Demirel University (1993-2000, Burdur / Turkey), Software Engineer (2000-2002, Izmir / Turkey), Research Assistant in Bulent Ecevit University (2002-2003, Zonguldak / Turkey), Research Assistant in Dokuz Eylul University (2003-2010, Izmir / Turkey), Assistant Professor at the Department of Electrical and Electronics Engineering in Bulent Ecevit University (2010-2012, Zonguldak / Turkey), Assistant Professor at the Department of Biomedical Engineering in Izmir Katip Celebi University (2012-2019, Izmir / Turkey). He is an Associate Professor at the Department of Biomedical Engineering at Izmir Katip Celebi University, Izmir / Turkey, since 2019. In addition to academics, he has also founded Islerya Medical and Information Technologies Company, Izmir / Turkey, since 2017.\n\nHis main research interests cover biomedical signal processing, pattern recognition, medical device design, programming, and embedded systems. He has many scientific papers and participated in several projects in these study fields. He was an IEEE Student Member (2009-2011) and IEEE Member (2011-2014) and has been IEEE Senior Member since 2014.",institutionString:null,institution:{name:"Izmir Kâtip Çelebi University",country:{name:"Turkey"}}},{id:"339677",title:"Dr.",name:"Mrinmoy",middleName:null,surname:"Roy",slug:"mrinmoy-roy",fullName:"Mrinmoy Roy",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/339677/images/16768_n.jpg",biography:"An accomplished Sales & Marketing professional with 12 years of cross-functional experience in well-known organisations such as CIPLA, LUPIN, GLENMARK, ASTRAZENECA across different segment of Sales & Marketing, International Business, Institutional Business, Product Management, Strategic Marketing of HIV, Oncology, Derma, Respiratory, Anti-Diabetic, Nutraceutical & Stomatological Product Portfolio and Generic as well as Chronic Critical Care Portfolio. A First Class MBA in International Business & Strategic Marketing, B.Pharm, D.Pharm, Google Certified Digital Marketing Professional. Qualified PhD Candidate in Operations and Management with special focus on Artificial Intelligence and Machine Learning adoption, analysis and use in Healthcare, Hospital & Pharma Domain. Seasoned with diverse therapy area of Pharmaceutical Sales & Marketing ranging from generating revenue through generating prescriptions, launching new products, and making them big brands with continuous strategy execution at the Physician and Patients level. Moved from Sales to Marketing and Business Development for 3.5 years in South East Asian Market operating from Manila, Philippines. Came back to India and handled and developed Brands such as Gluconorm, Lupisulin, Supracal, Absolut Woman, Hemozink, Fabiflu (For COVID 19), and many more. In my previous assignment I used to develop and execute strategies on Sales & Marketing, Commercialization & Business Development for Institution and Corporate Hospital Business portfolio of Oncology Therapy Area for AstraZeneca Pharma India Ltd. Being a Research Scholar and Student of ‘Operations Research & Management: Artificial Intelligence’ I published several pioneer research papers and book chapters on the same in Internationally reputed journals and Books indexed in Scopus, Springer and Ei Compendex, Google Scholar etc. Currently, I am launching PGDM Pharmaceutical Management Program in IIHMR Bangalore and spearheading the course curriculum and structure of the same. I am interested in Collaboration for Healthcare Innovation, Pharma AI Innovation, Future trend in Marketing and Management with incubation on Healthcare, Healthcare IT startups, AI-ML Modelling and Healthcare Algorithm based training module development. I am also an affiliated member of the Institute of Management Consultant of India, looking forward to Healthcare, Healthcare IT and Innovation, Pharma and Hospital Management Consulting works.",institutionString:null,institution:{name:"Lovely Professional University",country:{name:"India"}}},{id:"1063",title:"Prof.",name:"Constantin",middleName:null,surname:"Volosencu",slug:"constantin-volosencu",fullName:"Constantin Volosencu",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/1063/images/system/1063.png",biography:"Prof. Dr. Constantin Voloşencu graduated as an engineer from\nPolitehnica University of Timișoara, Romania, where he also\nobtained a doctorate degree. He is currently a full professor in\nthe Department of Automation and Applied Informatics at the\nsame university. Dr. Voloşencu is the author of ten books, seven\nbook chapters, and more than 160 papers published in journals\nand conference proceedings. He has also edited twelve books and\nhas twenty-seven patents to his name. He is a manager of research grants, editor in\nchief and member of international journal editorial boards, a former plenary speaker, a member of scientific committees, and chair at international conferences. His\nresearch is in the fields of control systems, control of electric drives, fuzzy control\nsystems, neural network applications, fault detection and diagnosis, sensor network\napplications, monitoring of distributed parameter systems, and power ultrasound\napplications. He has developed automation equipment for machine tools, spooling\nmachines, high-power ultrasound processes, and more.",institutionString:"Polytechnic University of Timişoara",institution:{name:"Polytechnic University of Timişoara",country:{name:"Romania"}}},{id:"221364",title:"Dr.",name:"Eneko",middleName:null,surname:"Osaba",slug:"eneko-osaba",fullName:"Eneko Osaba",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/221364/images/system/221364.jpg",biography:"Dr. Eneko Osaba works at TECNALIA as a senior researcher. He obtained his Ph.D. in Artificial Intelligence in 2015. He has participated in more than twenty-five local and European research projects, and in the publication of more than 130 papers. He has performed several stays at universities in the United Kingdom, Italy, and Malta. Dr. Osaba has served as a program committee member in more than forty international conferences and participated in organizing activities in more than ten international conferences. He is a member of the editorial board of the International Journal of Artificial Intelligence, Data in Brief, and Journal of Advanced Transportation. He is also a guest editor for the Journal of Computational Science, Neurocomputing, Swarm, and Evolutionary Computation and IEEE ITS Magazine.",institutionString:"TECNALIA Research & Innovation",institution:{name:"Tecnalia",country:{name:"Spain"}}},{id:"275829",title:"Dr.",name:"Esther",middleName:null,surname:"Villar-Rodriguez",slug:"esther-villar-rodriguez",fullName:"Esther Villar-Rodriguez",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/275829/images/system/275829.jpg",biography:"Dr. Esther Villar obtained a Ph.D. in Information and Communication Technologies from the University of Alcalá, Spain, in 2015. She obtained a degree in Computer Science from the University of Deusto, Spain, in 2010, and an MSc in Computer Languages and Systems from the National University of Distance Education, Spain, in 2012. Her areas of interest and knowledge include natural language processing (NLP), detection of impersonation in social networks, semantic web, and machine learning. Dr. Esther Villar made several contributions at conferences and publishing in various journals in those fields. Currently, she is working within the OPTIMA (Optimization Modeling & Analytics) business of TECNALIA’s ICT Division as a data scientist in projects related to the prediction and optimization of management and industrial processes (resource planning, energy efficiency, etc).",institutionString:"TECNALIA Research & Innovation",institution:{name:"Tecnalia",country:{name:"Spain"}}},{id:"49813",title:"Dr.",name:"Javier",middleName:null,surname:"Del Ser",slug:"javier-del-ser",fullName:"Javier Del Ser",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/49813/images/system/49813.png",biography:"Prof. Dr. Javier Del Ser received his first PhD in Telecommunication Engineering (Cum Laude) from the University of Navarra, Spain, in 2006, and a second PhD in Computational Intelligence (Summa Cum Laude) from the University of Alcala, Spain, in 2013. He is currently a principal researcher in data analytics and optimisation at TECNALIA (Spain), a visiting fellow at the Basque Center for Applied Mathematics (BCAM) and a part-time lecturer at the University of the Basque Country (UPV/EHU). His research interests gravitate on the use of descriptive, prescriptive and predictive algorithms for data mining and optimization in a diverse range of application fields such as Energy, Transport, Telecommunications, Health and Industry, among others. In these fields he has published more than 240 articles, co-supervised 8 Ph.D. theses, edited 6 books, coauthored 7 patents and participated/led more than 40 research projects. He is a Senior Member of the IEEE, and a recipient of the Biscay Talent prize for his academic career.",institutionString:"Tecnalia Research & Innovation",institution:null},{id:"278948",title:"Dr.",name:"Carlos Pedro",middleName:null,surname:"Gonçalves",slug:"carlos-pedro-goncalves",fullName:"Carlos Pedro Gonçalves",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRcmyQAC/Profile_Picture_1564224512145",biography:'Carlos Pedro Gonçalves (PhD) is an Associate Professor at Lusophone University of Humanities and Technologies and a researcher on Complexity Sciences, Quantum Technologies, Artificial Intelligence, Strategic Studies, Studies in Intelligence and Security, FinTech and Financial Risk Modeling. He is also a progammer with programming experience in:\n\nA) Quantum Computing using Qiskit Python module and IBM Quantum Experience Platform, with software developed on the simulation of Quantum Artificial Neural Networks and Quantum Cybersecurity;\n\nB) Artificial Intelligence and Machine learning programming in Python;\n\nC) Artificial Intelligence, Multiagent Systems Modeling and System Dynamics Modeling in Netlogo, with models developed in the areas of Chaos Theory, Econophysics, Artificial Intelligence, Classical and Quantum Complex Systems Science, with the Econophysics models having been cited worldwide and incorporated in PhD programs by different Universities.\n\nReceived an Arctic Code Vault Contributor status by GitHub, due to having developed open source software preserved in the \\"Arctic Code Vault\\" for future generations (https://archiveprogram.github.com/arctic-vault/), with the Strategy Analyzer A.I. module for decision making support (based on his PhD thesis, used in his Classes on Decision Making and in Strategic Intelligence Consulting Activities) and QNeural Python Quantum Neural Network simulator also preserved in the \\"Arctic Code Vault\\", for access to these software modules see: https://github.com/cpgoncalves. He is also a peer reviewer with outsanding review status from Elsevier journals, including Physica A, Neurocomputing and Engineering Applications of Artificial Intelligence. Science CV available at: https://www.cienciavitae.pt//pt/8E1C-A8B3-78C5 and ORCID: https://orcid.org/0000-0002-0298-3974',institutionString:"University of Lisbon",institution:{name:"Universidade Lusófona",country:{name:"Portugal"}}},{id:"241400",title:"Prof.",name:"Mohammed",middleName:null,surname:"Bsiss",slug:"mohammed-bsiss",fullName:"Mohammed Bsiss",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/241400/images/8062_n.jpg",biography:null,institutionString:null,institution:null},{id:"276128",title:"Dr.",name:"Hira",middleName:null,surname:"Fatima",slug:"hira-fatima",fullName:"Hira Fatima",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/276128/images/14420_n.jpg",biography:"Dr. Hira Fatima\nAssistant Professor\nDepartment of Mathematics\nInstitute of Applied Science\nMangalayatan University, Aligarh\nMobile: no : 8532041179\nhirafatima2014@gmal.com\n\nDr. Hira Fatima has received his Ph.D. degree in pure Mathematics from Aligarh Muslim University, Aligarh India. Currently working as an Assistant Professor in the Department of Mathematics, Institute of Applied Science, Mangalayatan University, Aligarh. She taught so many courses of Mathematics of UG and PG level. Her research Area of Expertise is Functional Analysis & Sequence Spaces. She has been working on Ideal Convergence of double sequence. She has published 17 research papers in National and International Journals including Cogent Mathematics, Filomat, Journal of Intelligent and Fuzzy Systems, Advances in Difference Equations, Journal of Mathematical Analysis, Journal of Mathematical & Computer Science etc. She has also reviewed few research papers for the and international journals. She is a member of Indian Mathematical Society.",institutionString:null,institution:null},{id:"414880",title:"Dr.",name:"Maryam",middleName:null,surname:"Vatankhah",slug:"maryam-vatankhah",fullName:"Maryam Vatankhah",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Borough of Manhattan Community College",country:{name:"United States of America"}}},{id:"414879",title:"Prof.",name:"Mohammad-Reza",middleName:null,surname:"Akbarzadeh-Totonchi",slug:"mohammad-reza-akbarzadeh-totonchi",fullName:"Mohammad-Reza Akbarzadeh-Totonchi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Ferdowsi University of Mashhad",country:{name:"Iran"}}},{id:"414878",title:"Prof.",name:"Reza",middleName:null,surname:"Fazel-Rezai",slug:"reza-fazel-rezai",fullName:"Reza Fazel-Rezai",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"American Public University System",country:{name:"United States of America"}}},{id:"302698",title:"Dr.",name:"Yao",middleName:null,surname:"Shan",slug:"yao-shan",fullName:"Yao Shan",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Dalian University of Technology",country:{name:"China"}}},{id:"125911",title:"Prof.",name:"Jia-Ching",middleName:null,surname:"Wang",slug:"jia-ching-wang",fullName:"Jia-Ching Wang",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"National Central University",country:{name:"Taiwan"}}},{id:"357085",title:"Mr.",name:"P. Mohan",middleName:null,surname:"Anand",slug:"p.-mohan-anand",fullName:"P. Mohan Anand",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Indian Institute of Technology Kanpur",country:{name:"India"}}},{id:"356696",title:"Ph.D. Student",name:"P.V.",middleName:null,surname:"Sai Charan",slug:"p.v.-sai-charan",fullName:"P.V. Sai Charan",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Indian Institute of Technology Kanpur",country:{name:"India"}}},{id:"357086",title:"Prof.",name:"Sandeep K.",middleName:null,surname:"Shukla",slug:"sandeep-k.-shukla",fullName:"Sandeep K. Shukla",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Indian Institute of Technology Kanpur",country:{name:"India"}}},{id:"356823",title:"MSc.",name:"Seonghee",middleName:null,surname:"Min",slug:"seonghee-min",fullName:"Seonghee Min",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Daegu University",country:{name:"Korea, South"}}},{id:"353307",title:"Prof.",name:"Yoosoo",middleName:null,surname:"Oh",slug:"yoosoo-oh",fullName:"Yoosoo Oh",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:"Yoosoo Oh received his Bachelor's degree in the Department of Electronics and Engineering from Kyungpook National University in 2002. He obtained his Master’s degree in the Department of Information and Communications from Gwangju Institute of Science and Technology (GIST) in 2003. In 2010, he received his Ph.D. degree in the School of Information and Mechatronics from GIST. In the meantime, he was an executed team leader at Culture Technology Institute, GIST, 2010-2012. In 2011, he worked at Lancaster University, the UK as a visiting scholar. In September 2012, he joined Daegu University, where he is currently an associate professor in the School of ICT Conver, Daegu University. Also, he served as the Board of Directors of KSIIS since 2019, and HCI Korea since 2016. From 2017~2019, he worked as a center director of the Mixed Reality Convergence Research Center at Daegu University. From 2015-2017, He worked as a director in the Enterprise Supporting Office of LINC Project Group, Daegu University. His research interests include Activity Fusion & Reasoning, Machine Learning, Context-aware Middleware, Human-Computer Interaction, etc.",institutionString:null,institution:{name:"Daegu Gyeongbuk Institute of Science and Technology",country:{name:"Korea, South"}}},{id:"262719",title:"Dr.",name:"Esma",middleName:null,surname:"Ergüner Özkoç",slug:"esma-erguner-ozkoc",fullName:"Esma Ergüner Özkoç",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Başkent University",country:{name:"Turkey"}}},{id:"346530",title:"Dr.",name:"Ibrahim",middleName:null,surname:"Kaya",slug:"ibrahim-kaya",fullName:"Ibrahim Kaya",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Izmir Kâtip Çelebi University",country:{name:"Turkey"}}},{id:"419199",title:"Dr.",name:"Qun",middleName:null,surname:"Yang",slug:"qun-yang",fullName:"Qun Yang",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Auckland",country:{name:"New Zealand"}}},{id:"351158",title:"Prof.",name:"David W.",middleName:null,surname:"Anderson",slug:"david-w.-anderson",fullName:"David W. Anderson",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Calgary",country:{name:"Canada"}}}]}},subseries:{item:{id:"24",type:"subseries",title:"Computer Vision",keywords:"Image Analysis, Scene Understanding, Biometrics, Deep Learning, Software Implementation, Hardware Implementation, Natural Images, Medical Images, Robotics, VR/AR",scope:"The scope of this topic is to disseminate the recent advances in the rapidly growing field of computer vision from both the theoretical and practical points of view. Novel computational algorithms for image analysis, scene understanding, biometrics, deep learning and their software or hardware implementations for natural and medical images, robotics, VR/AR, applications are some research directions relevant to this topic.",coverUrl:"https://cdn.intechopen.com/series_topics/covers/24.jpg",hasOnlineFirst:!0,hasPublishedBooks:!1,annualVolume:11420,editor:{id:"294154",title:"Prof.",name:"George",middleName:null,surname:"Papakostas",slug:"george-papakostas",fullName:"George Papakostas",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002hYaGbQAK/Profile_Picture_1624519712088",biography:"George A. Papakostas has received a diploma in Electrical and Computer Engineering in 1999 and the M.Sc. and Ph.D. degrees in Electrical and Computer Engineering in 2002 and 2007, respectively, from the Democritus University of Thrace (DUTH), Greece. Dr. Papakostas serves as a Tenured Full Professor at the Department of Computer Science, International Hellenic University, Greece. Dr. Papakostas has 10 years of experience in large-scale systems design as a senior software engineer and technical manager, and 20 years of research experience in the field of Artificial Intelligence. Currently, he is the Head of the “Visual Computing” division of HUman-MAchines INteraction Laboratory (HUMAIN-Lab) and the Director of the MPhil program “Advanced Technologies in Informatics and Computers” hosted by the Department of Computer Science, International Hellenic University. He has (co)authored more than 150 publications in indexed journals, international conferences and book chapters, 1 book (in Greek), 3 edited books, and 5 journal special issues. His publications have more than 2100 citations with h-index 27 (GoogleScholar). His research interests include computer/machine vision, machine learning, pattern recognition, computational intelligence. \nDr. Papakostas served as a reviewer in numerous journals, as a program\ncommittee member in international conferences and he is a member of the IAENG, MIR Labs, EUCogIII, INSTICC and the Technical Chamber of Greece (TEE).",institutionString:null,institution:{name:"International Hellenic University",institutionURL:null,country:{name:"Greece"}}},editorTwo:null,editorThree:null,series:{id:"14",title:"Artificial Intelligence",doi:"10.5772/intechopen.79920",issn:"2633-1403"},editorialBoard:[{id:"1177",title:"Prof.",name:"Antonio",middleName:"J. 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