This chapter presents the results of experimental studies of the PECVD technological mode parameters’ influence on the formation of catalytic centers and carbon nanotubes’ (CNTs’) growth processes. This chapter also presents the ability to regulate the growth parameter for the controlled production of CNTs with the required geometric parameters, properties, and growth mechanisms. The results of experimental studies of the heating temperature and activation time effects on the catalytic center formation will be presented. This chapter also shows the effects of growth temperature, heating rate, and the activation time on the geometric and structural parameters of the carbon nanotubes. Experimental studies were carried out with the use of AFM, SEM, TEM, and EXAFS techniques. The results can be used in the development of technological processes for creating ultrafast energy-efficient electronic component base with carbon nanostructures, particularly nanoelectromechanical switches, flexo- and piezoelectric generators, gas sensors, and high-performance emitters.
Part of the book: Perspective of Carbon Nanotubes
This chapter presents the results of experimental studies of the formation and investigation of the memristors by probe nanotechnologies. This chapter also perspectives and possibilities of application of local anodic oxidation and scratching probe nanolithography for the manufacture of memristors based on titanium oxide structures, nanocrystalline ZnO thin film, and vertically aligned carbon nanotubes. Memristive properties of vertically aligned carbon nanotubes, titanium oxide, and ZnO nanostructures were investigated by scanning probe microscopy methods. It is shown that nanocrystalline ZnO films manifest a stable memristor effect slightly dependent on its morphology. Titanium oxide nanoscale structures of different thicknesses obtained by local anodic oxidation demonstrate a memristive effect without the need to perform any additional electroforming operations. This experimentally confirmed the memristive switching of a two-electrode structure based on a vertically aligned carbon nanotube. These results can be used in the development of designs and technological processes of resistive random access memory (ReRAM) units based on the memristor devices.
Part of the book: Memristors