Yao-Feng Chang
Dr. Yao-Feng Chang is a TD Q&R Memory Reliability staff at Intel. He received a Ph.D. in Electrical and Computer Engineering from the University of Texas at Austin, USA, in 2015. His primary research focuses on emerging electronics and memory devices for advanced technology nodes for storage, computation, and energy-efficient integrated systems. He has published more than 100 journal publications and conference proceedings, and 5 filed patents.