Dr Fedorenko’s research interests are primarily in the areas of semiconductor physics and technology with emphasis on electronic properties of thin films and interfaces. Her research has involved technology development of metal-oxide-semiconductor field-effect transistors (MOSFETs), silicon wafer-based solar cells, and CdTe thin film solar cells.
Today, clean natural resources, global warming, energy production, transmission and storage are the most widely discussed topics and main directions of scientific research. This book presents a collection of research contributions addressing recent achievements in nanoscience to mitigate societal challenges of environmental pollution and energy shortage. The environmental control, forensics and virtually any industry rely on the newest advances in nanoscience and sustainable technologies. Nanostructured materials explored in ultrasensitive sensors aid in global environmental monitoring, medical diagnostics and energy conversion applications. Global energy resources - solar energy, hydrogen generation and the oceans - are being effectively explored owing to the discovery of new materials for photo- and photo-electrochemical energy conversion, hydrogen generation and storage, water purification and desalination, environmental control and information processing.
Go to the bookIon implantation is a nonequilibrium doping technique, which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Due to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology, ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nms to several microns in depth range). Ion implantation introduces point defects in solids. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.
Part of the book: Ion Implantation