Chapters authored
Luminescent Devices Based on Silicon-Rich Dielectric Materials
Luminescent silicon‐rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon‐rich nitride (SRN) and silicon‐rich oxide (SRO) films have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO films deposited by low‐pressure chemical vapor deposition are reviewed and discussed. SRN and SRO films, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emitting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO films as the dielectric layer. SRN‐LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO‐LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO‐LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.
Part of the book: Luminescence
Synthesis and Luminescent Properties of Silicon Nanocrystals
Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments.
Part of the book: Nanocrystals and Nanostructures
Monolithically Integrable Si-Compatible Light Sources
On the road to integrated optical circuits, the light emitting device is considered the bottleneck preventing us from arriving to the fully monolithic photonic system. While the development of silicon photonics keeps building momentum, the indirect bandgap nature of silicon represents a major problem for obtaining an integrated light source. Novel nanostructured materials based on silicon, such as silicon-rich oxide (SRO) containing silicon nanoparticles, present intense luminescence due to quantum phenomena. Using this material, electroluminescent devices have already been fabricated and even integrated in monolithic photonic circuits by fully complementary metal oxide semiconductor (CMOS) compatible techniques, opening the door to seamless electronic and photonic integration. The present work discusses some of the strategies used to improve the performance of SRO-based electroluminescent devices fully compatible with CMOS technology. Results from the characterization of devices obtained using different approaches are presented and compared.
Part of the book: Recent Development in Optoelectronic Devices