The chapter discusses about excitation‐intensity effects on photoluminescence emission peaks of zinc oxide (ZnO) material. ZnO is an ideal material for optoelectronic devices due to its wide band gap of 3.37 eV and some exciting optical properties. The performance of optoelectronic devices is greatly affected by the vibrational properties of the material, which are influenced by the interaction of phonons with free and bound electron‐hole pairs. The photoluminescence (PL) spectroscopy is used to understand the extrinsic and intrinsic defects in ZnO materials. Understanding PL of ZnO nanostructures/thin films may lead to development of more efficient ZnO‐based optoelectronic devices.
Part of the book: Luminescence