The electrical and optical properties of wide band gap materials are greatly affected by the presence of defects in the band gap. Identification and characterization of these defects that act as electron and hole traps are essential to understand charge carrier and exciton dynamics and ultimately control the electrical and optical properties of dielectrics and semiconductors. In this chapter, we will demonstrate how thermoluminescence (TL) spectroscopy can be used to characterize traps and measure their energy levels in the band gap. An advanced wavelength-based TL spectrometer will be presented, and its applications for the evaluation of trap levels and the characterization of donors and acceptors in semiconductors and dielectrics will be discussed.
Part of the book: Luminescence