In the last decade, a new architecture design such as nBn device or unipolar barrier photodiode has been proposed to achieve high operating temperature condition. This idea has also been implemented into HgCdTe ternary material system. In this chapter, we present the status of HgCdTe barrier detectors grown by metalorganic chemical vapor deposition with emphasis on numerical simulations of their properties. The device concept of a specific barrier bandgap architecture integrated with Auger suppression is a proper solution for high operating temperature infrared detectors. The device performance is comparable with state-of-the-art HgCdTe photodiodes.
Part of the book: Modeling and Simulation in Engineering Sciences