Chapters authored
Conductance Deep-Level Transient Spectroscopic Study of 4H- SiC MESFET and Traps
Part of the book: Physics and Technology of Silicon Carbide Devices
Effect of Piezoelectric Filed on the Optical Properties of (311) A and (311) B Oriented InAlAs/InP Heterostructures
InAlAs alloy was grown by MOCVD on an InP (311) substrate with different polarities. Measurements of photoluminescence (PL) and photoreflectance (PR) were performed to study the impact of the V/III flux ratio. It is discovered that the PL line was shifted to a greater energy side with the increasing excitation power density, and no saturation was observed of its related PL intensity. It is a fingerprint of type II transition emission. However, the recombination of the type II interface showed a powerful dependence on AsH3 overpressure and substrate polarity. In fact, we have noted an opposite behavior of type II energy transition shift from A to B polarity substrate in respect to V/III ratio variation. PR signals corresponding to Franz-Keldysh Oscillation (FKO) were observed. The analysis of their period has allowed one to assess the value of the PZ field in the samples. PL-luminescence measurements were performed out as a function of temperature. PL peak energy, PL intensity, and half maximum full width show anomalous behaviors. Indicating the existence of localized carriers, they were ascribed to the energy potential modulation associated with the indium cluster formation and PZ field.
Part of the book: Perovskite and Piezoelectric Materials