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One-Dimensional Models for Diffusion and Segregation of Boron and Ion Implantation of Aluminum in 4H-Silicon Carbide

Written By

Kazuhiro Mochizuki

Submitted: 26 May 2010 Published: 04 April 2011

DOI: 10.5772/14553

From the Edited Volume

Properties and Applications of Silicon Carbide

Edited by Rosario Gerhardt

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Written By

Kazuhiro Mochizuki

Submitted: 26 May 2010 Published: 04 April 2011