Open access peer-reviewed Edited Volume

Electric Field in Advancing Science and Technology

Hai-Zhi Song

Southwest University

A pioneering researcher in the fields of new materials, optoelectronic devices, and quantum information processing, appointed vice director of the Science and Technology Committee of SWITP, author/co-author of more than 170 research papers, and holder of 40 patents.

Covering

Electric Field Effect Nano-Materials Electric Field Design Antenna Microelectronics Optoelectronics Electric Field Stimulation Brain and Nerve Electric Field Imaging Atomic Electric Field Space Science Climate

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About the book

Electric field is a fundamental nature phenomenon and one of the most important physical parameters. It had significant effects on the last century's science, technology, economy, society, and human lives. After a long development, the electric field appears to take quite different roles in the recently developing science and technology. Its effect is much more refined and stronger. It is thus necessary to take a reviewing look at the development of the electric field in the advancing science and technology in recent years and to see how it would develop in the future. This book is intended to focus on the most important aspects: new materials, novel and sophisticated devices, molecule-level biology and medicine, highly developed instruments, and metrology. We will intend to show in this book that the electric field is taking more and more deterministic roles in newly advancing materials including nanomaterials, two-dimensional materials, new structure catalysts, meta-materials, etc. Devices are becoming tinier and tinier and multi-functioned, so the electric field design and function are getting precise, complicated, sophisticated but strong and multiplied. Biology and medicine are getting into molecule level, so the studies of electric field stimulation effect, electric field cue, and other electric-field related behaviors are growing very fast and will be widely practiced in the near future. Electrical field measurement is becoming an important tool for other physical behaviors such as weak magnetism, and the measurement is getting into the atomic scale so that instruments related to the electric field are stepping greatly forward. The electrical field appears more significant also in the fields of climate, environment, space science, etc., so we intend to present it in this book also as it would contribute remarkably to the future science and high technology.
 

Publishing process

Book initiated and editor appointed

Date completed: March 22nd 2022

Applications to edit the book are assessed and a suitable editor is selected, at which point the process begins.

Chapter proposals submitted and reviewed

Deadline Extended: Open for Submissions

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Approved chapters written in full and submitted

Deadline for full chapters: July 25th 2022

Once approved by the academic editor and publishing review team, chapters are written and submitted according to pre-agreed parameters

Full chapters peer reviewed

Review results due: October 13th 2022

Full chapter manuscripts are screened for plagiarism and undergo a Main Editor Peer Review. Results are sent to authors within 30 days of submission, with suggestions for rounds of revisions.

Book compiled, published and promoted

Expected publication date: December 12th 2022

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About the editor

Hai-Zhi Song

Southwest University

Curriculum Vitae Name: Hai-Zhi Song Gender: male Date of Birth: Oct. 20, 1968 Place of Birth: Shanxi, China Affiliation and Address: Southwest Institute of Technical Physics No.7, Section 4, Renminnan Road, Chengdu 610041, China And Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, No. 4, Section 2, Jianshebei Road, Chengdu 610054, China Work Phone: +86-28-68180751, +86-28-83208728 Mobile Phone: +86-158-28239155 Fax: +86-28-83201896 E-mail: hzsong1296@163.com, hzsong@uestc.edu.cn Education Sept, 1990 – July, 1995:Peking University, PhD, Thesis “Visible luminescence of porous silicon and its mechanism”, Researches on hydrogen-influenced Schottky diodes and silicon-based light-emitting materials. Sept, 1986 – July, 1990:Nanjing University, Bachelor of Science, Thesis “Study of refractory metal silicides”, Research on Ohmic contact of semiconductors. Work Experience July, 1995 – Sept. 1997: Nanjing University, Nanjing, China, Postdoctoral Researcher, Research on silicon-based light-emitting materials. Oct, 1997 – Sept. 1998: Catholic University Leuven, Leuven, Belgium, Visiting free Researcher, Research on amorphous semiconductors. Oct, 1998 – Sept. 2001: Tsukuba University, Tsukuba, Japan, Assistant Professor, Research on semiconductor quantum dots. Oct, 2001 – March 2012: Fujitsu Lab. Ltd., Atsugi, Japan, Researcher/Senior Researcher, Researches on Semiconductor Quantum Dots for Quantum Information, Semiconductor Optoelectronic Materials and Devices. April, 2012 – March 2014: University of Tokyo, Tokyo, Japan, Senior Researcher, Researches on Quantum Information Processing Devices. April, 2014 – now: Southwest Institute of Technical Physics, Chengdu, China, Professor, Researches on Semiconductor Optoelectronic Materials and Devices. June, 2015 – now: University of Electronic Science and Technology, Chengdu, China, Professor, Researches on Nanoscaled Semiconductors and Quantum Information Processing Devices. Achievements Systematically studied the property of porous silicon materials and verified their mechanism; found green and ultraviolet luminescence, and clarified the multiple luminescence mechanisms of nanocrystalline-silicon embedded in SiO2, which is valuable to silicon-based optoelectronic integration; realized enhanced hole mobility in amorphous silicon, verified the existence of deep trap states in amorphous selenium, providing ways to improve amorphous optoelectronic materials. Discovered lateral coupling between self-assembled quantum dots (QDs) and their tuning effect to 2D electron gas; illustrated and deeply explained the metal-insulator transition in 2D ordered QD arrays, all of which are worth in optoelectronic application of semiconductor QDs. Developed Sb-free technique to double the InAs/GaAs QD density and suppress the atomic interdiffusion, helped producing 1.3 um QD lasers, which won Japanese national prizes and had been merchandized; developed 1.06 um quantum-well lasers, which have been used to produce pure-green lasers robust against high temperature. Found a way to access buried QDs by scanning tunneling microscope; achieved a way to prepare diluted QDs by post-annealing and clarified its mechanisms; invented a technique to control the size and site of QDs by atomic-force microscopy lithography, and an apparatus to detect single electron spin states by optically-detected magnetic resonance; designed a few types of micropillar cavities applicable to realize 1.55 um highly-efficient, even coherent (strongly coupled) InAs/InP QD single photon sources; produced fiber-integrated photon-entangled sources, all of which are very useful to the applications of QDs in quantum information processing. Developed focal-plane single-photon avalanche detectors, providing central devices for 3D laser detecting and ranging system; explored antimonide middle- and long-wavelength infrared detectors and the surface plasmon enhancement effect in such detectors; advanced the acetone-sensing function of Eu-doped SnO2 nano-belt; found Nickle Phosphide serving as a good catalyst in hydrogen-producing. Realized a series of optoelectronic quantum devices for quantum information processing, such as fiber-integrated photon-pair-entangler, chiplet heralded single photon emitter, fiber quantum memories, quantum number generator, etc. Honor and Group Memberships Selected Scholar of the Recruitment Program of Global Experts, China Editorial member of “Laser Technology” Editorial member of “Journal of Electronic Science and Technology” Editorial member of “Internal J. Mat. Sci. Appl” Member of APS (American Physics Society) Member of OSA (Optical Society of America) Permanent Member of China Physical Science and Technology Permanent Member of the Chinese Optical Society Technical committee member of PIERS, organizing a series of “quantum information processing and devices” sessions Technical committee member of ICICM

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