In this chapter, we demonstrate, focusing on GaAs quantum wells (QWs), a full control of spin-orbit (SO) interaction including both the Rashba and Dresselhaus terms in conventional semiconductor QWs. We determine the SO interaction in GaAs from single to double and triple wells, involving the electron occupation of either one or two subbands. Both the intraband and interband SO coefficients are computed. Two distinct regimes, depending on the QW width, for the control of SO terms, are found. Furthermore, we determine the persistent-spin-helix (PSH) symmetry points, where the Rashba and the renormalized (due to cubic corrections) Dresselhaus couplings are matched. These PSH symmetry points, at which quantum transport is diffusive (2D) for charge while ballistic (1D) for spin, are important for longtime and long-distance coherent spin control that is the keystone in spintronic devices.
Part of the book: Functional Materials