The Si/6H-SiC heterostructure of large lattice mismatch follows domain epitaxy mode, which release most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. An interfacial misfit dislocation array is present at the interface that determines the domain’s size. In this chapter, transmission electron microscopy (TEM) and high resolution X-ray diffraction (HRXRD) were employed to reveal in-plane orientation, interface structure and growth mode of the Si/SiC heterostructure. Based on the characterizations, residual lattice mismatch and edge misfit dislocation density at the hetero-interface can be precisely controlled. And these characterization methods are applicable for the heterostructures of large-lattice mismatch, except for the heterostructures with different crystal symmetry on the film and the substrate.
Part of the book: Heterojunctions and Nanostructures