A memristor is the memory extension to the concept of resistor. With unique superior properties, memristors have prospective promising applications in non‐volatile memory (NVM). Resistive random access memory (RRAM) is a non‐volatile memory using a material whose resistance changes under electrical stimulus can be seen as the most promising candidate for next generation memory both as embedded memory and a stand‐alone memory due to its high speed, long retention time, low power consumption, scalability and simple structure. Among carbon‐based materials, graphene has emerged as wonder material with remarkable properties. In contrast to metallic nature of graphene, the graphene oxide (GO) is good insulating/semiconducting material and suitable for RRAM devices. The advantage of being atomically thin and the two-dimensional of GO permits scaling beyond the current limits of semiconductor technology, which is a key aspect for high‐density fabrication. Graphene oxide‐based resistive memory devices have several advantages over other oxide materials, such as easy synthesis and cost‐effective device fabrication, scaling down to few nanometre and compatibility for flexible device applications. In this chapter, we discuss the GO‐based RRAM devices, which have shown the properties of forming free, thermally stable, multi‐bit storage, flexible and high on/off ratio at low voltage, which boost up the research and development to accelerate the GO‐based RRAM devices for future memory applications.
Part of the book: Memristor and Memristive Neural Networks
The family of double perovskites first received attention in the 1960s, but the discovery of low field magnetoresistnace (LFMR) and half metallicity of the Sr2FeMoO6 (SFMO) compound was made by Kobayashi et al. in 1998. A fully spin polarized half-metal SFMO (Tc > 400) with excellent magnetoresistance response relatively at small applied fields and high temperatures makes SFMO an ideal candidate for room temperature spintronics applications. Primarily, most of the research work on double perovskites SFMO has been focused on bulk ceramic samples and aimed to understand their structural, magnetic, and magnetotransport properties, along with correlation among them. A material such as SFMO that exhibits a large decrease in resistivity and magnetically order well above room temperature is necessary for the advancement of spintronic devices. If the bulk properties observed could be reproduced in thin films, industrially produced SFMO-based spintronic devices could become a reality. Therefore, the purpose of this chapter is to present the detailed background and descriptions of the double perovskite Sr2FeMoO6 (SFMO) thin films and heterostructures with main emphasis to improve or achieve room temperature magnetoresistance properties especially for room temperature magnetoresistive device applications.
Part of the book: Magnetic Sensors