The present chapter is devoted to the study of amorphous (a-Si:H), polymorphous (pm-Si:H), and microcrystalline (μc-Si:H) silicon, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at low temperatures. We have studied the main deposition parameters that have strong influence on the optical, electrical, and structural properties of the polymorphous and microcrystalline materials. Our results reveal the key deposition conditions for obtained films with optical and electrical characteristics, which are suitable for applications on thin-film solar cells and semiconductor devices.
Part of the book: Crystalline and Non-crystalline Solids
The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is no doped film to be used. In this chapter, some alternatives to improve this interface are analysed. Also, the influence of this interface on the electrical stability of these devices is presented.
Part of the book: Different Types of Field-Effect Transistors