Masashi Arita

Hokkaido University

Masashi Arita received the B.S. degree in materials science from Hiroshima University, Hiroshima, Japan, in 1980, and the Ph.D. degree in solid state physics from Eidgenössische Technische Hochschule (ETH) Zurich, Zurich, Switzerland, in 1987. He joined Ciba-Geigy Japan in 1987, where he was engaged in research on crystallography and electrophotography of organic substances. Since joining Nagoya University, Nagoya, Japan, in 1990, he has been engaged in research on crystallography and physical properties of metallic nano particles and ultrathin films. Since 1997, he has been an Associate Professor at the Graduate School of Engineering as well as the Graduate School of Information Science and Technology, Hokkaido University, Sapporo, Japan. His major subject at present is in-situ electron microscopy of electronic devices.

1books edited

2chapters authored

Latest work with IntechOpen by Masashi Arita

TEM and SEM have contributed greatly to the progress of various research fields, which has been accelerated in the last few decades by highly functional electron microscopes and microscopy. In this tide of microscopy, various microscopic methods have been developed to make clear many unsolved problems, e.g. pulse beam TEM, environmental microscopy, correlative microscopy, etc. In this book, a number of reviews have been collected concerning these subjects. We think that the content in each chapter is impressive, and we hope this book will contribute to future advances in electron microscopy, materials science, and biomedicine.

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Electron Microscopy

Edited by Masashi Arita

Chapters authored

In Situ Transmission Electron Microscopy for Electronics

By Masashi Arita, Kouichi Hamada, Yasuo Takahashi, Kazuhisa Sueoka and Tamaki Shibayama

Electronic devices are strongly influenced by their microstructures. In situ transmission electron microscopy (in situ TEM) with capability to measure electrical properties is an effective method to dynamically correlate electric properties with microstructures. We have developed tools and in situ TEM experimental procedures for measuring electronic devices, including TEM sample holders and sample preparation methods. The method was used to study metallic nanowire by electromigration, magnetoresistance of a ferromagnetic device, conductance quantization of a metallic nanowire, single electron tunnelling, and operation details of resistive random access memories (ReRAM).

Part of the book: The Transmission Electron Microscope

Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy

By Masashi Arita, Atsushi Tsurumaki-Fukuchi and Yasuo Takahashi

The metal-filament-type resistive random access memories (ReRAMs) with copper were investigated from the point of view of dynamical microstructure evolution in the repetitive switching operations using in situ transmission electron microscopy (in situ TEM). Through a series of experiments for uncovered solid electrolyte films, stacked devices, and nanofabricated cells, formation and erasure of the copper filaments and deposits were confirmed. The behavior of the filament and deposit depended on the switching condition and history. Based on these in situ TEM results, the switching schematics and the degradation process were discussed.

Part of the book: Memristor and Memristive Neural Networks

Masashi Arita

Latest work with IntechOpen by Masashi Arita

Electron Microscopy

Chapters authored

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