Released this past November, the list is based on data collected from the Web of Science and highlights some of the world’s most influential scientific minds by naming the researchers whose publications over the previous decade have included a high number of Highly Cited Papers placing them among the top 1% most-cited.
\\n\\n
We wish to congratulate all of the researchers named and especially our authors on this amazing accomplishment! We are happy and proud to share in their success!
IntechOpen is proud to announce that 191 of our authors have made the Clarivate™ Highly Cited Researchers List for 2020, ranking them among the top 1% most-cited.
\n\n
Throughout the years, the list has named a total of 261 IntechOpen authors as Highly Cited. Of those researchers, 69 have been featured on the list multiple times.
\n\n\n\n
Released this past November, the list is based on data collected from the Web of Science and highlights some of the world’s most influential scientific minds by naming the researchers whose publications over the previous decade have included a high number of Highly Cited Papers placing them among the top 1% most-cited.
\n\n
We wish to congratulate all of the researchers named and especially our authors on this amazing accomplishment! We are happy and proud to share in their success!
Note: Edited in March 2021
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\r\n\tExtremophilic microbes are microorganisms that can grow under a remarkable range of extreme environments such as glacial deserts, hot springs, ocean floors, hypersalted environments, rocks of the Earth's mantle. These include acidophiles, alkaliphiles, halophiles, barophiles, (hyper) thermophiles, and psychrophiles. These hostile environments shelter the rich biodiversity of extremophiles which could belong to one of the three domains of life (Bacteria, Archaea, and Eukaryotes). These microbes have evolved several mechanisms to ensure genomic integrity, cell division, and energy conservation in extreme conditions. They present a wide and versatile metabolic and enzymatic diversity coupled with extraordinary physiological capacities in rich extreme environments. These enzymes and metabolites have been exploited to develop clean and sustainable industrial processes. Antibiotics, compatible solutes, and other compounds obtainable from these microbes are also finding a variety of uses. Recently, several investigations have been started to study the phylogenetic relationship between extremophilic microbes through the analysis of their genome sequences. Hence, comparative genomic analyses of genomes allowed the identification of distinctive genes and metabolic pathways involved in the extremophilic way of life. Such analyses provided key data that enabled us to understand gene functionality across organisms and environments and track the evolutionary events involved in environmental adaptations at the population and strain levels.
",isbn:"978-1-80356-819-5",printIsbn:"978-1-80356-818-8",pdfIsbn:"978-1-80356-820-1",doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!1,isSalesforceBook:!1,isNomenclature:!1,hash:"9c39aa5fd22296ba53d87df6d761a5fc",bookSignature:"Dr. Afef Najjari",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/11630.jpg",keywords:"Bacteria, Archaea, Fungi, Diversity, Adaptation, Metabolites, Extremozymes, Salinity, Temperature, Acidity, Osmoadaptation, Astrobiology",numberOfDownloads:null,numberOfWosCitations:0,numberOfCrossrefCitations:null,numberOfDimensionsCitations:null,numberOfTotalCitations:null,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"March 30th 2022",dateEndSecondStepPublish:"June 10th 2022",dateEndThirdStepPublish:"August 9th 2022",dateEndFourthStepPublish:"October 28th 2022",dateEndFifthStepPublish:"December 27th 2022",dateConfirmationOfParticipation:null,remainingDaysToSecondStep:"2 months",secondStepPassed:!0,areRegistrationsClosed:!0,currentStepOfPublishingProcess:4,editedByType:null,kuFlag:!1,biosketch:"Assistant Professor of Bioinformatics at the Faculty of Sciences of Tunisia, University of Tunis El Manar who worked on several topics including genetic and enzymatic diversities of lactic acid bacteria isolated from dairy and meat products and microbial diversity and ecology of extremophilic microbes in arid and saline ecosystems and mainly on archaeal groups.",coeditorOneBiosketch:null,coeditorTwoBiosketch:null,coeditorThreeBiosketch:null,coeditorFourBiosketch:null,coeditorFiveBiosketch:null,editors:[{id:"196823",title:"Dr.",name:"Afef",middleName:null,surname:"Najjari",slug:"afef-najjari",fullName:"Afef Najjari",profilePictureURL:"https://mts.intechopen.com/storage/users/196823/images/system/196823.jpeg",biography:"Dr. Afef Najjari is an Assistant Professor of Bioinformatics at the Faculty of Sciences of Tunisia, University of Tunis El Manar. Dr. Afef has worked on several topics including (i) genetic and enzymatic diversities of lactic acid bacteria isolated from dairy and meat products, and (ii) microbial diversity and ecology of extremophilic microbes in arid and saline ecosystems and mainly on archaeal groups. These works were funded by national and international projects. Currently, she is interested in metagenomic analysis, genome assemblies and annotations, transcriptomic data analysis (microarrays), and biological database development.",institutionString:"University of Tunis El Manar",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"1",totalChapterViews:"0",totalEditedBooks:"1",institution:{name:"Tunis El Manar University",institutionURL:null,country:{name:"Tunisia"}}}],coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"13",title:"Immunology and Microbiology",slug:"immunology-and-microbiology"}],chapters:null,productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},personalPublishingAssistant:{id:"185543",firstName:"Maja",lastName:"Bozicevic",middleName:null,title:"Mrs.",imageUrl:"https://mts.intechopen.com/storage/users/185543/images/4748_n.jpeg",email:"maja.b@intechopen.com",biography:"As an Author Service Manager my responsibilities include monitoring and facilitating all publishing activities for authors and editors. From chapter submission and review, to approval and revision, copyediting and design, until final publication, I work closely with authors and editors to ensure a simple and easy publishing process. I maintain constant and effective communication with authors, editors and reviewers, which allows for a level of personal support that enables contributors to fully commit and concentrate on the chapters they are writing, editing, or reviewing. I assist authors in the preparation of their full chapter submissions and track important deadlines and ensure they are met. I help to coordinate internal processes such as linguistic review, and monitor the technical aspects of the process. As an ASM I am also involved in the acquisition of editors. Whether that be identifying an exceptional author and proposing an editorship collaboration, or contacting researchers who would like the opportunity to work with IntechOpen, I establish and help manage author and editor acquisition and contact."}},relatedBooks:[{type:"book",id:"8415",title:"Extremophilic Microbes and Metabolites",subtitle:"Diversity, Bioprospecting and Biotechnological Applications",isOpenForSubmission:!1,hash:"93e0321bc93b89ff73730157738f8f97",slug:"extremophilic-microbes-and-metabolites-diversity-bioprospecting-and-biotechnological-applications",bookSignature:"Afef Najjari, Ameur Cherif, Haïtham Sghaier and Hadda Imene Ouzari",coverURL:"https://cdn.intechopen.com/books/images_new/8415.jpg",editedByType:"Edited by",editors:[{id:"196823",title:"Dr.",name:"Afef",surname:"Najjari",slug:"afef-najjari",fullName:"Afef Najjari"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"1591",title:"Infrared Spectroscopy",subtitle:"Materials Science, Engineering and Technology",isOpenForSubmission:!1,hash:"99b4b7b71a8caeb693ed762b40b017f4",slug:"infrared-spectroscopy-materials-science-engineering-and-technology",bookSignature:"Theophile Theophanides",coverURL:"https://cdn.intechopen.com/books/images_new/1591.jpg",editedByType:"Edited by",editors:[{id:"37194",title:"Dr.",name:"Theophile",surname:"Theophanides",slug:"theophile-theophanides",fullName:"Theophile Theophanides"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3161",title:"Frontiers in Guided Wave Optics and Optoelectronics",subtitle:null,isOpenForSubmission:!1,hash:"deb44e9c99f82bbce1083abea743146c",slug:"frontiers-in-guided-wave-optics-and-optoelectronics",bookSignature:"Bishnu Pal",coverURL:"https://cdn.intechopen.com/books/images_new/3161.jpg",editedByType:"Edited by",editors:[{id:"4782",title:"Prof.",name:"Bishnu",surname:"Pal",slug:"bishnu-pal",fullName:"Bishnu Pal"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"371",title:"Abiotic Stress in Plants",subtitle:"Mechanisms and Adaptations",isOpenForSubmission:!1,hash:"588466f487e307619849d72389178a74",slug:"abiotic-stress-in-plants-mechanisms-and-adaptations",bookSignature:"Arun Shanker and B. 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1. Introduction
The memristor concept was first proposed as the fourth fundamental passive circuit element by Chua in 1971 based on the completeness of the circuit theory, which indicates the relationship between magnetic flux and charge [1, 2]. After thirty seven years, Strukov et al. eventually found the missing memristor in studying TiO2 cross-arrays in 2008 [2]. This draws the extensive and intensive attention from the academia and the industry. Memristor is a two-terminal electrical device whose resistance can be tuned by changing the flux or charge through it. Memristor possesses a lot of advantages, e.g., simple device architecture, high energy efficiency, better compatibility with semiconductor industry, and high integration density.
A neural synapse, as the basic unit of learning and memory in the brain, plays a critical role in biological neural networks. Electronic synapses are utilized to emulate the bio-synapses’ functions. Some researches on synapse simulation have been reported by adjusting synaptic weights so as to make an effective bio-inspired computing system [3, 4, 5, 6]. Nevertheless, most work chose transistors and capacitors to realize artificial synapse, which produced high energy consumption at high integration density and limited the programming running. The new memristor has nonlinear transfer characteristics similar to the bio-synapse and is regarded as the closest to the synaptic device [4].
Although various materials and structures exhibit memristive behavior, almost all the memristor systems are based on the structural asymmetry [7, 8]. For example, in the metal–insulator–metal (MIM) structure, the defects such as oxygen vacancy or active ions in the insulator layer can induce structural asymmetry under the action of the external field, or when one of the metal electrodes is active. Therefore, the asymmetric bilayer-structured memristors play a crucial role in constructing artificial neural networks for brain-inspired applications.
Atomic layer deposition (ALD) is a kind of commercial technology compatible with semiconductor processing. It shows unusual advantages in controllable fabrication of nano-laminate thin films due to its unique sequential self-limiting surface reaction mechanism at low growth temperature [9, 10]. In early 2001 ALD has been known as candidate technology preferred for semiconductor industry along with metalorganic chemical vapor deposition (MOCVD) and plasma-enhanced CVD by the international technology roadmap for semiconductors (ITRS) [11]. ALD has become one of the most competitive deposition techniques for microelectronics and nanotechnology owing to sub-nanometer thickness control, large-area uniformity, excellent three-dimensional conformality, and good reproducibility. Thin films with low defect density can be prepared by ALD even at room temperature (RT) with plasma assistance [12]. Evidently, low temperature or RT ALD technology can greatly widen the flexible substrate choice range, showing exciting potentials in flexible electronic device fabrication. Molecular layer deposition (MLD) can be regarded as the subtype of ALD due to the molecular nature of the deposition process, suitable for growth of organic–inorganic hybrid materials [13].
In this section, we fabricated several synaptic devices of asymmetric bilayer-structured ultrathin memristors by atomic layer deposition (ALD) and molecular layer deposition (MLD), such as Pt/AlOx/HfOx/TiN, Pt/HfO2/HfOx/TiN, Pt/TiO2/Ti-based maleic acid (Ti-MA)/TaN. Some biological synapse-like functions of long−/short-term plasticity (LTP and STP), spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF) have been achieved simultaneously. A memristive mechanism of an asymmetric bilayer-structured synaptic device has been proposed to explain synaptic plasticity based on the oxygen vacancy migration/diffusion model.
2. Bilayer-structured ultrathin memristors
2.1 Fabrication processing
Asymmetric bilayer-structured ultrathin memristor based on Pt/A/B/TiN or TaN was fabricated on SiO2/Si substrates by thermal-ALD (TALD), MLD and plasma-enhanced ALD (PEALD), as illustrated in Figure 1a. Herein A and B act as asymmetric memristive functional layer, PEALD TiN or sputtered TaN as bottom electrode, sputtered Pt as top electrode with a spot size in diameter of 150 μm. Table 1 gives several typical bilayer ultrathin memristors and their architectures. The related deposition conditions have been listed in Table 2, including used metal precursors and reactants, source temperature and deposition temperature, and growth per cycle (GPC).
Figure 1.
(a) Diagram of the asymmetric bilayer-structured ultrathin memristor. (b) I–V characteristics of the Pt/HfOx/ZnOx/TiN synapse device measured by a modified DC double ramp sweep. The sweep sequence is denoted by the number. (c) I–V characteristics of the memristor at positive and negative bias voltages. The voltage sweep range is from 0 to 1.4 (−0.6) V then back to 0 V, and the time for a sweep cycle is 1 s. the device conductivity continuously decreases or increases during the positive or negative voltage sweeps. (d) the curves of voltage and current versus time, which are plotted from the data in (c) [15].
Device structure
A (thickness)
B (thickness)
Pt/HfOx/ZnOx/TiN
HfOx (5 nm)
ZnOx (5 nm)
Pt/AlOx/HfOx/TiN
AlOx (5 nm)
HfOx (5 nm)
Pt/TiO2/Ti-MA/TaN
Ti-MA (4 nm)
TiO2 (4 nm)
Table 1.
Several typical bilayer-structured ultrathin memristors and their architectures.
Material
Metal precursor
Precursor temperature
Reactant
Deposition temperature
GPC (Å/cycle)
TALD
HfO2
TEMAH
155°C
H2O
250°C
1
AlOx
TMA
RT
H2O
250°C
1
ZnOx
DEZ
RT
H2O
250°C
1.3
TiO2
TiCl4
RT
H2O
250°C
0.3
PEALD
HfOx
TEMAH
155°C
H2 plasma
250°C
1
TiN
TiCl4
RT
NH3 plasma
400°C
0.5
MLD
Ti-MA
TiCl4
RT
MA(135°C)
160°C
1.4
Table 2.
Deposition conditions of asymmetric functional layers in memristors prepared by TALD/PEALD/MLD. Here TEMAH, TMA, DEZ, and MA refer to Hf[N(C2H5)CH3]4, Al(CH3)3, Zn(C2H5)2, maleic acid, respectively.
2.2 Electrical performances and synaptic functions
The electrical properties were measured under DC sweep and pulse modes using semiconductor parameter analyzer on probe station. The bottom electrode of memristors was set on ground and all the voltage signals were applied to the top electrode. The asymmetric bilayer ultrathin memristors were exploited to mimic some important synaptic functions such as long-term potentiation/depression, the transition from STP to LTP, PPF and STDP.
2.2.1 TiN/ZnOx/HfOx/Pt inorganic memristor
The I–V curves of Pt/HfOx/ZnOx/TiN inorganic memristor are plotted in Figure 1b under a modified DC double sweep. To mimic the functions of a nerve synapse, one multiple-state resistances should be obtained in bilayer memristor. A continuous set or reset process was performed by successive increasing the compliance from 0.1 to 1.0 mA at an interval of 0.1 mA or altering the reset voltage from 1.0 to 1.7 V at an interval of 0.05 V. 8 low resistance states (LRS) and 11 distinguishable high resistance states (HRS) are observed during consecutive set and reset process, respectively. Moreover the resistance can be continuously reduced or raised between multiple intermediate states without going back to the original state, which is key for electronic synapse [14]. The device conductivity decreases continuously with six easily recognized states after exerting sweep positive bias voltage from 0 to 1.4 V six times and the elevated conductivity with difficultly distinguishable ones after sweep negative pulse voltage from 0 to −0.6 V (Figure 1c and d), indicating the conductance change caused by consecutive potentiating or depressing signals. It can be attributed to the dynamic change of oxygen vacancy concentration and distribution in asymmetric bilayer structure of HfOx/ZnOx under various electrical signals [15].
A series of pulse signals were designed and applied to the memristor to test the important STDP rule in the Hebbian learning theory, as seen in the insets of I and III of Figure 2, including the V−/V+ = −1.0 V/1.0 V pulse pair signal as a presynaptic and postsynaptic spike with the 3 s interval time. Such design can prevent from the disturbance of excitatory postsynaptic current [16]. The time interval between the final presynaptic spike and the initial postsynaptic spike is defined as the relative time of Δt. The relative change of the synaptic weights (ΔW) is defined as:
Figure 2.
Emulation of STDP learning rule in Pt/HfOx/ZnOx/TiN memristive device—The relative change of the memristor synaptic weight (ΔW) versus the relative spike timing (Δt). And the solid line is the fitting exponential curve to the experimental data. The insets illustrate various spike schemes. The pulse pair comprises a positive and a negative voltage pulse with amplitude of 1.0 V and width of 50 ms. The interval between the two pulses is Δt ms (t = ±10n, n = 1, 2, …, 10). The current compliance is not set in the whole emulation process. The current values are read at 0.1 V after 5 min of the spikes [15].
ΔW=I2–I1/I1×100%E1
The initial postsynaptic or presynaptic current I1 was used as the control value. After the spike pair was applied and over for 5 min, the measured presynaptic or postsynaptic current was I2.
The dependence of ΔW on Δt of Pt/HfOx/ZnOx/TiN in Figure 2 II and IV follows the STDP learning rule. While the presynaptic spike happens before the postsynaptic spike (Δt < 0), synaptic weights enhance, indicating long-term potentiation (LTPo); while the presynaptic spike appears after the postsynaptic spike, synaptic weights become small (Δt > 0), implying long-term depression (LTD). And the shorter the Δt between the two spikes, the larger the ΔW. The STDP data points of memristor in Figure 2 show evident statistical scatter, similar to the biological synapse.
In addition, Pt/HfOx/ZnOx/TiN device also exhibits the nonlinear transmission efficiency, and the transition from STP to LTP (not shown here) [15].
2.2.2 TiN/HfOx/AlOx/Pt inorganic memristor
The memristor device based on TiN/HfOx/AlOx/Pt can also emulate the biological synapse. Usually, the synapse operates under pulse signals rather than DC bias sweep voltage. The LTPo and LTD phenomena can be observed in Pt/AlOx/HfOx/TiN under 180 potentiating pulses (−0.5 V, 10 ms) and 180 depressing pulses (1 V, 10 ms), as shown in Figure 3a. The connection strength can be dynamically modulated by the consecutive external signals, determining the transfer efficiency between the electronic neurons.
Figure 3.
(a) Change in the response current under the influence of consecutive potentiating or depressing pulses. After pulse stimulation, a 0.1 V 100 ns reading pulse was applied to read the response current. After −0.5 V potentiating pulses, the response current gradually increases (long-term potentiation), while the response current gradually decreases after 1 V depressing pulses (long-term depression). (b) Response of a memristor device to different pulse programs [17].
Further experiments have demonstrated that a pulse signal from amplitude of 1.0–1.5 V and pulse width of 50–100 ms leads to various current responses in Figure 3b. That is to say, the larger pulse amplitude, the longer pulse width, and the more pulse number will produce more significant response current change, which is analogous to long-term potentiation/depression of the human brain.
Synaptic plasticity can be divided into STP and LTP according to the timelines of enhanced synaptic connections. The repeated stimulation induced STP to LTP transition is illustrated in Figure 4. With increasing the rehearsal pulse number (N = 10, 40, 70, 100, 120), the resistance remaining becomes larger (Figure 4a). This procedure is similar to the Ebbinghaus forgetting curve related to human memory [18, 19].
Figure 4.
Repeated stimulation induced STP to LTP transition. (a) Resistance remaining decay curve recorded after 10, 40, 70, 100, 120 identical pulses (1.6 V, 10 ms). A 0.1 V voltage was used to read the device current. (b) Resistance remaining decay curve recorded after 70 identical pulses and the fitted curve according to Eq. (1). The inset plots the dependence of relaxation time τ on the pulse number. τ is obtained by the fitting curve [17].
An exponential decay equation was employed to depict the relaxation process:
Mt=Me+M0−Meexp−t/τE2
where M(t), M0, and Me are the memory level at time t, t = 0, and at steady state after a long time, and τ of the relaxation time constant. The experimental and simulation results after 70 identical pulses are shown in Figure 4b, containing the dependence of τ on N in the inset. The decay rate is faster in the beginning and then becomes slower. The τ value increases from several seconds to 50 seconds with the training pulse number from 10 to 120, revealing a declining forgetting rate from ∼57% for N = 10 to ∼5% for N = 120. This confirms the transition from STP to LTP through repeated rehearsal and learning.
The STDP rule has been mimicked in TiN/HfOx/AlOx/Pt memristor, as indicated in Figure 5. The schematic of another training pulse signal with various amplitudes is shown in Figure 5a, different from the pulse design in Figure 2. A set of pulses (1 V, −0.5 V, −0.45 V, −0.4 V, −0.35 V, −0.3 V, −0.25 V)/(0.5 V, −1 V, −0.9 V, −0.8 V, −0.7 V, −0.6 V, −0.5 V) were used as pre-synaptic/post-synaptic stimulation signals, respectively. Some different pulse signals designed at various spike timings (Δt) are designed and illustrated in Figure 5b. When the shortest Δt (10 ms) is inserted to the device, the largest ΔW of 50% for potentiation and − 80% for depression are realized.
Figure 5.
(a) Training pulse signal with different amplitudes design schematic loaded on the Pt/AlOx/HfOx/TiN memristor (assuming Δt = 10 ms). Each pulse width and pulse interval are 10 ms, respectively. (b) Some different pulse signals designed at various spike timings (Δt). (c) STDP-like curves. The relative change of the memristor synaptic weight (ΔW) versus the relative spike timing (Δt) [17].
The memristive mechanism of asymmetric TiN/HfOx/AlOx/Pt memristor has been deeply investigated with the aid of x-ray photoelectron spectroscopy (XPS) depth analyses, which will be discussed in the following Section 2.3.
2.2.3 TiN/HfOx/HfOx/Pt inorganic memristor
In the previous work on Pt/HfOx/ZnOx/TiN and TiN/HfOx/AlOx/Pt memristors, the asymmetric memristive functional layers of A and B are different materials. Next, we will focus on Pt/HfO2/HfOx/TiN bilayer-structured memristor, as illustrated in Figure 6a. 4 nm-thick non-stoichiometric HfOx films were prepared by PEALD using the H2 plasma and 2 nm-thick stoichiometric HfO2 films by TALD using the H2O precursor, in basically consistent with the measured result by the cross-sectional high angle annular dark field (HAADF)-scanning transmission microscopy (STEM) in Figure 6b. The energy dispersive x-ray spectroscopy (EDS) elemental mapping images of Pt/HfO2/HfOx/TiN are shown in Figure 6c, revealing the stacking structure. In addition, XPS composition analyses show that the atomic ratio of Hf:O in the HfO2 and HfOx layers is 1:2.04 and 1:1.84, respectively, indicating that stoichiometric HfO2 and nonstoichiometric HfOx bilayer-structured memristors have been obtained [20]. Hence A and B herein represent HfO2 and HfOx with various oxygen contents, respectively. This device unit based on TiN/HfOx/HfO2/Pt memristor can also simulate the biological synapse learning rule of STDP, as indicated in Figure 6d. When the shortest spike timing of 10 ms is applied to the memristor device, the pulse train responses give rise to the largest ΔW value of 83% for potentiation and − 65% for depression, respectively [20]. These ΔW values for STDP are similar for Pt/HfOx/ZnOx/TiN, TiN/HfOx/AlOx/Pt and TiN/HfOx/HfO2/Pt memristors.
Figure 6.
(a) Schematic of the Pt/HfO2/HfOx/TiN memristor. (b) Cross sectional HAADF-STEM image of the device. (c) EDS elemental mapping of Pt, Hf, O, N, Ti and Si. (d) STDP-like curves. The different synaptic weights (ΔW) versus the different spike times (Δt). The inset shows a pair of pre-synaptic and post-synaptic spikes, and the spike pair is designed to implement STDP [20].
The paired-pulse facilitation (PPF) is a phenomenon wherein the post-synaptic response induced by the spike increases when the time interval of the two spikes is very close [20]. PPF index can be defined as follows:
PPF=G2−G1/G1−100%=C1·exp−Δt/τ1+C2·exp−Δt/τ2E3
G1 and G2 are the conductance values after the first and the second pulse, respectively. The time constants of τ1 and τ2 can be assigned to the fast and slow decaying terms, respectively.
Evidently Pt/HfO2/HfOx/TiN memristor displays the marked dependence of synaptic weight on pulse interval Δt by applying the pulse of −1.5 V and 2.5 V, respectively, as seen in Figure 7a and b. For shortest Δt of 400 ns, the PPF index increases to 135% under positive pulse and becomes −62% under negative pulse. For the negative pulse signals, the calculated τ1 and τ2 values are 357 ns and 2.47 ms, respectively; for the positive pulses, τ1 and τ2 are 1.48 ms and 6.79 ms, respectively. When the Δt decreases, the memory effect will be improved, which is ascribed to the fact that the smaller Δt between pulses produces less oxygen vacancies to drift back with more effective accumulation of the oxygen vacancies.
Figure 7.
PPF index as the function of the time interval (Δt) of the Pt/HfO2/HfOx/TiN memristor under negative voltage pulse (a) and positive voltage pulse (b). Black points represent the measurement data, and the red lines represent the fitting data by using Eq. (3). The insets in (a) and (b) record the applied pulse waveforms [20].
Pt/HfO2/HfOx/TiN also mimics a classical conditioning under different pulse stimuli, as illustrated in Figure 8. In the famous experiment [21], a dog salivates (unconditioned response, UR) when watching the food (unconditioned stimulus, US) (Figure 8a), when it does not salivate (conditioned response, CR) on hearing the ring (conditioned stimulus, CS) alone (Figure 8b). Nonetheless, after some rehearsals, i.e. feeding the dog when ringing the bell (Figure 8c), the dog salivates even in only hearing the ring (Figure 8d). This elucidates that the dog has correlated the food with the ring. Furthermore, when taking away the food, the correlation between the food and ring gradually reduces and even disappears under only the conditioned stimuli (Figure 8e). The whole procedure can be emulated in the Pt/HfO2/HfOx/TiN by using +4 V and − 1.3 V stimuli with a single pulse duration of 5 ms.
Figure 8.
Emulation of the acquisition and extinction of classical conditioning demonstrated by Pavlov’s dog experiment. (a) The dog salivates while watching the food (US → salivating UR). (b) The dog does not salivate upon hearing the ringing alone (CS → no salivating). (c) In the training process, the food and ringing together stimulates the dog, and the dog salivates (US + CS → salivating). (d) After sufficient training, classical conditioning is formed and the dog salivates upon hearing the ringing alone (CS → salivating, CR). (e) Extinction of classical conditioning after removing the food for some time. (f) Positive +4 V pulse (US) can lead to a high resistance output, similar to the UR in (a). (g) The negative −1.3 V pulse (CS) cannot lead to the high resistance output before training, similar to the CS in (b). (h) After applying several training sequences of +2.7 V pulse voltage, equal to the simultaneous stimuli of −1.3 V and +4 V pulses, the device reaches a high resistance state of 2 MΩ (CR), analogous to the phenomenon in (c). (i) After only applying some −1.3 V pulse alone, the memristor remains in a high resistance state, similar to CR in (d). Then it returns to the low resistance state, consistent with the extinction of classical conditioning in (e) [20].
Before rehearsing, the memristor has a low resistance state of 5 kΩ. The +4 V stimulus (US) causes a high resistance state of 3 MΩ (UR) (Figure 8f), when the −1.3 V stimulus (CS) only results in a low resistance state of 5 kΩ before training (Figure 8g). In Pavlov’s experiments, the food and the ring exist simultaneously to reinforce the correlation between US and CS. In our experiments, the +2.7 V stimulus was exerted to the memristor, the same as the simultaneous stimuli of −1.3 V and + 4 V pulse signals. When two rehearsing sequences with +2.7 V pulse, the device becomes the high resistance output of 2 MΩ (CR) (Figure 8h). When removing the +4 V signal, the memristor continues to keep in a high resistance state under a series of −1.3 V stimuli alone and then returns to a low resistance state (Figure 8i), implying the setup and vanish of the classical conditional reflex.
The energy consumption is one important indicator for a practical electronic synaptic device in neuromorphic network. Pt/HfO2/HfOx/TiN memristor can be set in less than 100 ns and reset in less than 10 ns, indicating the rapid switching speed, as recorded in Figure 9a.
Figure 9.
(a) Switching speed test of the synaptic device. The voltage for the set and reset operation in the memristor is about −2 V and +3 V, respectively. The device can be switched in less than 100 ns for a set operation and less than 10 ns for a reset operation. (b) Transient current response on the applied voltage pulse for a set operation from the high resistance state to the low resistance state. The set pulse amplitude, width, rising time, and falling time are set to be −2 V, 1000 ns, 20 ns, and 20 ns, respectively. (c) Transient current response on the applied voltage pulse for a reset operation from the low resistance state to the high resistance state. The reset pulse amplitude, width, rising time, and falling time are set to be 3 V, 1000 ns, 20 ns, and 20 ns, respectively [20].
The current response curves versus the time after the applied programming signal during the set or reset operation are plotted in Figure 9b and c, respectively. The current rises after a waiting time of about 260 ns when a − 2 V/1 ms stimulus is applied, indicating the beginning of the set process (Figure 9b). The memristor resistance decreases from the initial high resistance state (∼1 MΩ) to low resistance state (∼800 Ω). Similarly, the current reduces after a waiting time of about 70 ns when a +3 V/1 ms signal is exerted, showing the occurrence of the reset process. The energy consumption per operation can be calculated to be 520 pJ for the set process and 1.05 nJ for the reset process by considering the pulse waveforms (time, response current, and pulse voltage), corresponding to the maximum energy consumption in one set or reset operation, as the memristor has been set in the lowest resistance state with the highest response current. Nevertheless, the actual operation of the electronic synapse is generally in the mediate resistance states (∼80 kΩ). The response current of the memristor is inversely proportional to the resistance value of the synaptic device with a first-order approximation. So, the evaluated actual energy consumption per operation will decline in the range of around ten picojoules.
Finally, the impact of oxygen vacancy concentration in non-stoichiometric HfOx layers on resistive switching properties of Pt/HfO2/HfOx/TiN bilayer ultrathin memristor has been investigated. The memristor with 12.1% oxygen vacancy concentration in the HfOx layer exhibits comprehensively better performances such as the optimal pulse energy consumption, reset switching speed, and DC endurance and retention characteristics [20].
As mentioned above, we mainly elucidated the bio-synaptic functions of three asymmetric inorganic bilayer-structured ultrathin memristors. In this part, organic–inorganic hybrid bilayer memristors of TaN/Ti-MA/TiO2/Pt were prepared by low temperature MLD/ALD at 160°C. The synaptic plasticity has been explored deeply. Some superb synaptic functions, such as nonlinear transmission characteristics, STP/LTP, PPF, and STDP have been achieved in the hybrid memristors [22].
First the narrow-scan XPS and Fourier transform infrared (FTIR) spectroscopy were used to detect the chemical composition and organic group of Ti-based maleic acid (Ti-MA) hybrid film, as shown in Figure 10a–d. The C 1 s XPS peaks at 284.6 eV and 288.4 eV (Figure 10a) result from the C-C (backbone chain carbon) bond and the O-C=O bond from carboxyl, respectively, suggesting the occurrence of organic component in Ti-MA films. The doublet at 458.7 eV and 464.5 eV with the spin orbit splitting energy of 5.8 eV can be assigned to the Ti 2p1/2 and Ti 2p3/2 ones from the Ti-O bond of TiO2 [13, 23] (Figure 10b, which indicates the inorganic component in hybrid films. Moreover, the O 1 s spectrum can be deconvoluted into two peaks at 530.0 eV and 531.6 eV, corresponding the O-Ti and O-C bonds, respectively (Figure 10c). The FTIR spectrum of Ti-MA hybrid film (Figure 10d) displays the asymmetric and symmetric stretch of carboxylate groups at 1575 cm−1 and 1447 cm−1. The splitting of 128 cm−1 indicates the bidentate bond mode between the Ti ion and carboxyl. As a result, Ti-MA inorganic–organic hybrid films have been fabricated successfully.
Figure 10.
Narrow-scan XPS spectra of (a) C 1 s, (b) Ti 2p and (c) O 1 s and (d) FTIR spectrum from the Ti-MA hybrid films on Si [22].
The resistive switching characteristics of the hybrid bilayer memristor of TaN/Ti-MA/TiO2/Pt have been examined for 100 times, as seen in in Figure 11a. The typical bipolar resistive switching behavior has been confirmed with narrow distribution of set voltage of −1.6 ± 0.2 V (red line) or reset voltage of 1 ± 0.1 V (black line). The double-logarithmic I-V curves and linear fits to the set process are shown in Figure 11b. At the low voltage stage, the I-V is dominated by the Ohm’s law with the approximately linear relationship (region 1, R2 = 0.9996). When the voltage increases, the current is dependent of near square of the voltage, obeying the Child conductive law (region 2, R2 = 0.9995). At critical voltage of around 1.2 V, the current is proportional to the nth power of the voltage with a sharp current rise (region 3, R2 = 0.9904). All these prove the space charge limited current (SCLC) model in hybrid bilayer memristor [24], revealing the filament model of oxygen vacancy migration.
Figure 11.
(a) I-V curve of the TaN/Ti-MA/TiO2/Pt hybrid memristor for 100 times DC ramp voltages tests. Bottom inset is the schematic of the memristor. (b) Double-logarithmic I-V curves and linear fits to the set process [22].
The PPF and STDP functions have also been characterized in hybrid memristor, as shown in Figures 12 and 13, respectively. A pair of pulses (−1 V, 400 ns) with different Δt were applied to the hybrid memristor (Figure 12a). The measured data can be well fit exponentially (Figure 12b). The PPF index has reached to 361% with the 400 ns pulse interval in hybrid memristor. When the pulse interval increases to 2400 ns, the PPF index dramatically tends to 3% [22]. Compared to inorganic bilayer memristor, the organic–inorganic hybrid bilayer device has much larger PPF index in the same pulse interval of 400 ns.
Figure 12.
(a) PPF function in memristors generated by two pulse spikes and the real-time response current. (b) PPF curves with different pulse interval time [22].
Figure 13.
STDP curves obtained in hybrid memristor. The spot is the measured data and the red line is the fitting results. The insets are the spike pulse signals designed by a pair of 0.8 V and −0.8 V pulses with pulse width of 120 μs [22].
The STDP rule was emulated in hybrid memristor by using a pair of 0.8 V and −0.8 V pulses with 120 μs pulse width. The ΔW has a strong time correlation with maximum 35% increment at the Δt of −20 μs and −20% reduction at the Δt of 20 μs. These values are relatively smaller than the ΔW maximum value of 60–90% of inorganic memristors. Finally, the ΔW in hybrid device obeys the exponential association with the Δt, namely
ΔW=Aexp−Δt/τE4
The measured data can be fitted well.
In addition, the conditioned reflex has been mimicked in hybrid film memristor, similar to the results of Pt/HfO2/HfOx/TiN memristor in Figure 8.
By comparison with inorganic bilayer memristors, it can be found that the organic–inorganic hybrid bilayer memristor has similar bio-synaptic functions with comparable switching speed and energy consumption. Moreover organic–inorganic hybrid materials may possess both the advantages of organic and inorganic components with excellent flexibility and tunability. Inorganic compounds have better electrical characteristics and thermal stability. Organic compounds own various functional groups, larger stretchability and low processing temperature. By means of the synergetic and complementary effects between organic and inorganic components, the comprehensive properties of hybrid memristive materials could be expected for significant improvement. The hybrid bilayer ultrathin memristor derived by low temperature MLD/ALD is one competitive candidate for flexible neuroscience applications.
2.3 Memristive mechanism
In Section 2.2, we focused on the electrical Performance and synaptic functions of several bilayer ultrathin memristors. In this section, the asymmetric memristive mechanism of the bilayer-structured memristors on TiN or TaN will be studied carefully. Taking Pt/AlOx/HfOx/TiN memristor as an example, the XPS depth profiles of asymmetric bilayer device units were obtained under various resistance states of the initial state, low resistance state (LRS), high resistance state (HRS), and medium resistance state [17]. XPS is a powerful surface analytical tool to determine the chemical valence and the oxygen vacancy contents in multilayer-structured metal oxide thin films [23, 25].
Figure 14a–d records the high-resolution Al 2p, Hf 4f and O 1 s peaks in AlOx and HfOx layers for as-deposited Pt/AlOx/HfOx/TiN in the initial state. The Hf 4f spectra from the HfOx layer can be deconvoluted into four peaks (Figure 14b). The stronger peaks at ∼16.7 eV and 18.6 eV originate from the Hf4+ in the HfOx layer, whereas the weaker ones with slightly lower energies of 15.6 eV and 17.9 eV come from the Hf(4−x)+ in the low valence Hf sub-oxide. The content percentage of two Hf valence states in the HfOx layer can be roughly evaluated by calculating the area proportion of each peak, as shown in the inset of Figure 14b [26, 27, 28]. The percentage of Hf4+ and Hf(4−x)+ in the HfOx layer is around 89.7% and 9.4%, respectively. A similar analysis can be also carried out for the Al 2p spectra from AlOx layer (Figure 14a). Meanwhile the O 1 s spectra from the AlOx and HfOx layers can also be deconvoluted into two peaks. The stronger peaks at around 531.5 and 531.0 eV result from Al-O and Hf-O bonding in the AlOx and HfOx layers, respectively, whereas the weaker ones with a slightly higher energy of 532.1 eV in the O 1 s spectra are ascribed to the oxygen vacancies in the AlOx and HfOx layers according to the literature reports [26, 27, 28, 29]. The calculated percentage of oxygen vacancies in the AlOx and HfOx layers is around 0.7% and 8.1%, respectively (Figure 14c and d). Significantly, the oxygen vacancy content in the HfOx layer is much higher than that in the AlOx layer.
Figure 14.
Narrow-scan (a) Al 2p, (b) Hf 4f and O 1 s peaks of (c) AlOx and (d) HfOx in as-prepared Pt/AlOx/HfOx/TiN in the initial state. (e) XPS depth profile of Pt/AlOx/HfOx/TiN in the initial state. (f) The depth distribution of the average oxygen vacancy concentration in the initial state, LRS, HRS, and medium resistance state after 40 pulses (1.5 V, 0.5 ms). The gray region in figure (e) and (f) is the interfacial layer [17].
The XPS depth data of Pt/AlOx/HfOx/TiN memristor by Ar ion etching under various resistance states may provide some valuable information on the valence states and defects of metal oxide layers [24], for the initial state sample recorded in Figure 14e. The AlOx/HfOx bilayer structure could be recognized with an evident interfacial diffusion between AlOx/HfOx and HfOx/TiN (gray region). The depth distribution of the average oxygen vacancy concentration in the asymmetric Pt/AlOx/HfOx/TiN memristors under various resistance states of the initial state, LRS, HRS, and medium resistance state is illustrated in Figure 14f. Table 3 lists the average oxygen vacancy concentration values of Pt/AlOx/HfOx/TiN for four resistance states at different positions of A, B, C, D, and E, corresponding to an etch time of 0 s, 90 s, 210 s, 390 s, and 510 s. Herein A, B, C, D, and E locate in the interface of the Pt/AlOx, AlOx layer, the interface of the AlOx/HfOx, HfOx layer, and the interface of HfOx/TiN, respectively. The oxygen vacancy distribution is inhomogeneous in the Pt/AlOx/HfOx/TiN memristor, and the oxygen vacancy concentration of the interfaces between AlOx/Pt (A), AlOx/HfOx (C), HfOx/TiN (E) is markedly higher than that of the adjacent AlOx (B) and HfOx (D) layers. Furthermore, the oxygen vacancy concentration in HfOx (D) is much higher than that in AlOx (B) layer.
Oxygen vacancy concentration
A
B
C
D
E
Position
Pt/AlOx
AlOx
AlOx/HfOx
HfOx
HfOx/TiN
Initial
9.5%
0.7%
17.7%
8.7%
21.1%
LRS
8.8%
4.1%
10.4%
7.1%
17.3%
HRS
7.2%
3.0%
11.2%
8.0%
16.7%
Medium
6.6%
4.0%
11.3%
7.5%
17.0%
Table 3.
Average oxygen vacancy concentration of Pt/AlOx/HfOx/TiN in various positions for different resistance states [17].
In general, the resistive switching mechanism of metal oxide memristors is related to the connection and rupture of conductive filaments of oxygen vacancies. But the simple increase of oxygen vacancy concentration is not always effective. The non-uniform distribution of oxygen vacancies in memristors is the critical factor affecting the resistive switching behavior of memristive devices [30].
Based on the oxygen vacancy concentration and distribution in the Pt/AlOx/HfOx/TiN memristors under various resistance states in Figure 14f, we proposed a memristive mechanism of an asymmetric bilayer metal oxide synaptic device to explain synaptic plasticity, as illustrated in Figure 15.
Figure 15.
Model of the formation and rupture of a conductive filament consisting of oxygen vacancies. After −3 V forming voltage, the device transfers from an initial resistance state (a) to a low resistance state (LRS) (b); after 2.5 V reset voltage, the device transfers from a low resistance state to a high resistance state (HRS) (c); after 40 continuous pulses (+1.5 V, 10 ms), the device transfers from LRS to a medium resistance state (d) [17].
There are much more random oxygen vacancies in the HfOx layer than in the AlOx layer for as-deposited Pt/AlOx/HfOx/TiN device. Meanwhile, the oxygen vacancy concentration in the interfaces of AlOx/HfOx and HfOx/TiN is evidently higher than the HfOx layer (Figure 15a). During the forming process, the disorderly distributed oxygen vacancies in the bilayer oxide layers and interfacial layers form conductive filaments under the external electrical field, similar to the soft breakdown of the capacitor. So the connection and disconnection of the conductive filaments lead to resistive switching. When inserting a −3 V forming voltage, the device turns from the initial state to LRS with suddenly resistance drop from 10 MΩ to 600 Ω, suggesting that the oxygen vacancies with positive charges (VO2+) in the AlOx/HfOx interface, HfOx layer, and HfOx/TiN interface move to the AlOx layer and AlOx/Pt interface. Simultaneously, the oxygen vacancy concentration gradient help to the migration of the oxygen vacancies, forming localized conductive filaments of oxygen vacancies in the bilayer structured AlOx/HfOx device (Figure 15b).
After applying the +2.5 V reset voltage to the LRS device, the memristor transfers from LRS (600 Ω) to HRS (1 MΩ) (Figure 15c). During the reset process, the oxygen vacancies migrate from the AlOx/Pt interface and AlOx layer to the AlOx/HfOx interface and HfOx layer, leading to the rupture of oxygen vacancy conductive filaments in the AlOx layer. Besides, considering the thermophoresis/diffusion-driven oxygen migration [31, 32], the middle position of the conductive filament in the AlOx layer first breaks up, causing a spatial gap, as indicated by the red arrow in Figure 15c. electron tunneling happens through the physical gap with the enhanced resistance. During the reset process, the oxygen vacancy concentration declines at the AlOx/Pt interface and AlOx layer and rises at the AlOx/HfOx interface and HfOx layer, as proved by the relative variation of oxygen vacancy concentrations in Figure 14f and Table 3.
Because the synapse device usually operates under pulse mode to get more intermediate resistance states, a continuous pulse experiment was exploited to alter the device from a LRS (600 Ω) to a medium resistance state (50 kΩ) by imposing 40 pulses (+1.5 V, 10 ms) (Figure 15d). The XPS result (Figure 14f) indicates that the oxygen vacancy concentration curve of medium resistance state devices lies approximately between HRS and LRS in the AlOx layer and HfOx layer. The difference in oxygen vacancy concentration at the interface layers of AlOx/HfOx and HfOx/TiN among the medium resistance state, LRS, and HRS is slightly little. In consequence, during regular operations of synaptic memristors, the formation/rupture of nanoscale conductive filaments tend to appear in the low k AlOx layer with lower electric field intensity [33]. Furthermore, the device conductance can be modulated by the oxygen vacancy drift under pulse electric field, producing a change in the concentration and distribution of oxygen vacancies at the interface of the metal/oxide and the interior. In the LRS of 600 Ω, the conductive filament is thick with the conductance of 22 G0, corresponding to a wide conductive filament with classical metallic properties. After 40 pulse stimuli, a medium resistance state of 50 kΩ is obtained with a conductance of 0.26 G0, where the conductive filament behaves as a quantum wire, producing a single-defect conducting path [31, 33, 34].
The oxygen vacancy migration/diffusion model can be used to explain the transition from STP to LTP in bilayer memristive device (Figure 4a). When imposing the +1.6 V pulse, the oxygen vacancies move from the AlOx layer to the HfOx layer with the reduced response current. When the voltage is removed, some oxygen vacancies may stay in a new steady position, however some oxygen vacancies may diffuse back to the old position owing to the gradient of oxygen concentration. This leads to the device conductance change with a reduced synaptic weight during the relaxation time. After applying repetitive pulse stimuli, the subsequent voltage forces the reversely diffused oxygen vacancies to move forward again so as to improve the migration efficiency until most oxygen vacancies attain new equilibrium positions. The remaining synaptic weight gradually increases with the increasing pulse number. This process is called repeated training and learning, corresponding to the transformation from STP to LTP [17].
The memristive mechanism from Pt/AlOx/HfOx/TiN device is also applicable to other bilayer-structured memristors such as Pt/HfO2/HfOx/TiN, Pt/TiO2/Ti-MA/TaN.
3. Conclusion
Our asymmetric bilayer-structured memristors fabricated by ALD/MLD and their main memristive features are summarized in Table 4, including set/reset voltage, ON/OFF ratio, and some important synaptic functions. Some similar work with asymmetric bilayer structure has also been listed in Table 4 for comparison. It can be seen that all memristors with asymmetric bilayer structure exhibit better resistive switching performance. Our memristors have relatively thinner functional layers, relatively smaller ON/OFF ratio and emulate more artificial synaptic functions such as LTPo, LTD, the transition from STP to LTP, PPF, STDP, and conditional reflex (CR). The memristive mechanism of our bilayer-structured ultrathin device has been proposed to explain the synaptic plasticity based on oxygen vacancies migration/diffusion model. The non-uniform distribution of oxygen vacancies in asymmetric bilayer memristors plays the crucial role in affecting the linkage/rupture of conductive filaments.
Comparison of main memristive features of our ultrathin memristors fabricated by ALD/MLD and other asymmetric bilayer-structured memristors.
In light of these promising results and the fabrication compatibility with semiconductor industry, the ALD/MLD-derived bi-layer ultrathin memristor devices have tremendous potential as billions of electronic synapses in next-generation artificial neural network and flexible electronics.
Acknowledgments
This work is supported by the Natural Science Foundation of China (52073142, 51721001) and Jiangsu Province (BK20201252). Mr. Chang Liu also acknowledges the support from the Nanjing University Innovation and Creative Program for PhD candidate (CXCY18-27).
Conflict of interest
The authors declare no conflict of interest.
\n',keywords:"memristor, atomic layer deposition, bilayer, synapse, mechanism",chapterPDFUrl:"https://cdn.intechopen.com/pdfs/76692.pdf",chapterXML:"https://mts.intechopen.com/source/xml/76692.xml",downloadPdfUrl:"/chapter/pdf-download/76692",previewPdfUrl:"/chapter/pdf-preview/76692",totalDownloads:224,totalViews:0,totalCrossrefCites:0,totalDimensionsCites:0,totalAltmetricsMentions:0,introChapter:null,impactScore:0,impactScorePercentile:49,impactScoreQuartile:2,hasAltmetrics:0,dateSubmitted:"December 7th 2020",dateReviewed:"April 15th 2021",datePrePublished:"May 10th 2021",datePublished:"November 17th 2021",dateFinished:"May 10th 2021",readingETA:"0",abstract:"This chapter deals with several kinds of ultrathin bilayer-structured memristors, such as Pt/Al2O3/HfO2/TiN, Pt/HfO2/HfOx/TiN, Pt/TiO2/Ti-based maleic acid (Ti-MA)/TaN, among which the asymmetric memristive functional layers were designed and prepared by atomic layer deposition (ALD) or molecular layer deposition (MLD) technique. These bilayer memristors exhibit a typical bipolar resistive switching characteristic, in accord with the space charge limited current model. Some important biologic synaptic functions have been achieved, including nonlinear transmission characteristics, spike-timing-dependent plasticity, short−/long-term plasticity, paired-pulse facilitation, and conditioned reflex. The mechanism of bilayer memristive device has been proposed based on oxygen vacancies migration/diffusion model. Above all the ultrathin bilayer memristors fabricated by low temperature ALD/MLD are one competitive candidate for neuromorphic simulation and flexible electronic applications.",reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/76692",risUrl:"/chapter/ris/76692",book:{id:"10501",slug:"memristor-an-emerging-device-for-post-moore-s-computing-and-applications"},signatures:"Chang Liu, Lin Zhu, Lai-Guo Wang and Ai-Dong Li",authors:[{id:"343487",title:"Prof.",name:"Ai-Dong",middleName:null,surname:"Li",fullName:"Ai-Dong Li",slug:"ai-dong-li",email:"adli@nju.edu.cn",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"Nanjing University",institutionURL:null,country:{name:"China"}}},{id:"349879",title:"Mr.",name:"Chang",middleName:null,surname:"Liu",fullName:"Chang Liu",slug:"chang-liu",email:"201214010413@hnu.edu.cn",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"Nanjing University",institutionURL:null,country:{name:"China"}}},{id:"349882",title:"Ms.",name:"Lin",middleName:null,surname:"Zhu",fullName:"Lin Zhu",slug:"lin-zhu",email:"ZL235YX@163.COM",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"Nanjing University",institutionURL:null,country:{name:"China"}}},{id:"349884",title:"Dr.",name:"Lai-Guo",middleName:null,surname:"Wang",fullName:"Lai-Guo Wang",slug:"lai-guo-wang",email:"wlglily@163.com",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"Anqing Normal University",institutionURL:null,country:{name:"China"}}}],sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Bilayer-structured ultrathin memristors",level:"1"},{id:"sec_2_2",title:"2.1 Fabrication processing",level:"2"},{id:"sec_3_2",title:"2.2 Electrical performances and synaptic functions",level:"2"},{id:"sec_3_3",title:"2.2.1 TiN/ZnOx/HfOx/Pt inorganic memristor",level:"3"},{id:"sec_4_3",title:"2.2.2 TiN/HfOx/AlOx/Pt inorganic memristor",level:"3"},{id:"sec_5_3",title:"2.2.3 TiN/HfOx/HfOx/Pt inorganic memristor",level:"3"},{id:"sec_6_3",title:"2.2.4 TaN/Ti-MA/TiO2/Pt organic: inorganic hybrid memristor",level:"3"},{id:"sec_8_2",title:"2.3 Memristive mechanism",level:"2"},{id:"sec_10",title:"3. Conclusion",level:"1"},{id:"sec_11",title:"Acknowledgments",level:"1"},{id:"sec_14",title:"Conflict of interest",level:"1"}],chapterReferences:[{id:"B1",body:'Chua L. Memristor-the missing circuit element. IEEE Transactions on circuit theory. 1971;18(5):507-519.'},{id:"B2",body:'Strukov DB, Snider GS, Stewart DR, Williams RS. 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Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor. IEEE Electron Device Letters. 2020;PP(99):1-.'},{id:"B38",body:'Yan X, Qin C, Lu C, Zhao J, Li H. Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing. ACS Applied Materials & Interfaces. 2019;11:48029-48038.'}],footnotes:[],contributors:[{corresp:null,contributorFullName:"Chang Liu",address:null,affiliation:'
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People’s Republic of China
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People’s Republic of China
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People’s Republic of China
National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, People’s Republic of China
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1. Introduction
Pests are organisms which can damage the crops and compete with them. They cause decrease in the plant density, stunted growth of plant, a lower production capacity, and lessen the yield or nature of horticultural products. A standout among the most well-known approaches to regulate or dispense pests is to kill pests using pesticides. The pesticides may cause biological or physical damage to pest organisms. Some pesticides are applied indirectly or by spraying on a plant which can be consumed by an insect.
Several techniques for crop protection were developed to prevent and minimize the loss of crops due to pests in the field (preharvest losses) and during storage (postharvest losses). Crop protection involves products, tools, and practices which can be used by farmers to protect their harvest against insects, disease, and weeds. Weeds steal sunlight, nutrients, and water from crops. The food production can be influenced by insects and disease. Farmers around the globe settle on various choices every day with respect to how best to secure their crops by using different practices like biological control, microbial pesticides, pest behavior, genetic manipulation, and plant immunization of pest population. Fortunately, a variety of solutions are available with advances in modern agriculture. Table 1 shows different methods to control pests and diseases.
Methods
Actions
Biological control
Suppression of pest populations by natural enemies (predators, parasites, competitors, diseases)
Microbial pesticides
Relatively stable formulations of microorganisms that suppress pests by producing poisons, causing diseases, preventing establishment of other microorganisms, or other mechanisms
Pest behaviour-modifying chemicals
Exploitation of the chemical signals used by living organisms to evoke specific behaviours from other organisms
Genetic manipulation of pest populations
Release into the pest population of individuals genetically altered to carry genes that interfere with the pest’s reproduction or impact
Plant immunization
Enhancement of plant resistance to pests by means other than breeding or genetic engineering
Table 1.
Different methods to control pests and diseases.
2. Literature review
It was studied that the farmer takes into account to control the steady-state mice populations in order to use no or a moderate amount of pesticide. It depends on the prices as well as the shape of the grain production function which is determined by the microparameters of grain reproduction [1].
It was found that the barn owls (Tyto alba) can be used for the purpose of vertebrate pest control, and farmers in some agricultural regions breed barn owls and hunt on their farms by installing artificial nest boxes. The barn owl diet and nest box occupancy in an intensive agricultural landscape in the Central Valley of California were used to measure whether agricultural land use affected the barn owl diet [2].
It has been studied that heat treatment (HT) methods can be used to control insect pests in flour mills by thermal analyses and temperature trend models. The results show that to achieve an air temperature above 45°C, the time period of HT should be increased by 9 h. In thermal bridges, the surface temperatures should be lethal to insects and be capable of dropping sensible heat flux loss with the help of insulating materials [3].
It was observed that lablab bean (Lablab purpureus) faces major losses due to insect pests in spite of heavy dependence on conventional insecticides. It was managed by testing biorational insecticides as substitutes for conventional insecticides to control pod borers (Maruca vitrata) and aphids (Aphis craccivora) [4].
It has been stated that the important life-sustaining actions of phytopathogenic fungi, parasitic nematode, and phytophagous insects are the preeminent constraining variables of agricultural production organizations [5].
It has been stated that integrated pest management (IPM) is broadly stimulated among the European Union (EU) member states. The effectiveness of natural enemies for pest control is low as compared with insecticides, especially under high pest damage levels. Farmers with greater income have more financial flexibility to adopt either pest control method. The environment surrounding a farm may also influence its owner’s willingness to promote natural pest control [6].
It has been investigated that crop damage can be minimized by using vertebrates which could consume numerous crop pests [7].
It has been studied that to obtain healthy crop as well as high yield, the control of pest attack is a significant feature in agriculture. The growth of awareness level is supposed to be relational to density of the healthy pests in the crop field. Global sources like televisions, radio, etc. can enhance the awareness level. The basic reproduction number represents the existence and the stability criteria of the equilibria. The Hopf-bifurcation analysis was done at the endemic equilibrium by considering time delay as the bifurcation parameter. The analytical results were justified by numerical simulations [8].
This overview provides a valuable insight to various stakeholders in the food chain on how food handlers and companies perceive pest control [9].
It was found that there are several methods to control pests, which involve the use of molting hormone (20-hydroxyecdysone) analogs (e.g., tebufenozide), chitin synthesis inhibitors (e.g., diflubenzuron), and juvenile hormone analogs (e.g., methoprene). They have been collectively called as “insect growth regulators” or IGRs, as they harmfully affect the normal growth and development in one way or another like they affect insect reproduction [10].
3. New methods of pest control
Following are the new advanced methods for pest control.
3.1 Biorational products
Biologically based pesticide products or biorational products contain pheromones (a chemical substance released by an animal into the environment, particularly an insect or a mammal, affecting the physiology or behavior of its other species) or living microorganisms, which have little negative impact on the environment and are nontoxic. Bacillus thuringiensis-based (Bt-based) microbial pesticides are most effective biorational pesticides. These types of biorational pesticides can be used in the place of competitive chemical products, which are banned in export markets where the concerns about food residue are high, and in environmentally sensitive areas.
“Pheromone-assisted technique” increases the efficiency of insecticides against ants. When a combination of insecticide and pheromones is used, it can actually trap away ants from their trails and nests to the insecticide. Thus, it reduces the contact of insecticide with the environment, while increasing the exposure of ants to the insecticide for eradication.
3.2 Insect growth regulators (IGRs)
Insect growth regulators (IGRs) are synthetic insect hormones, which can be used as insecticides to regulate the populations of harmful insect pests. IGRs prevent an insect from reaching maturity by interfering with the molting process. Many IGR products are mixed with other insecticides that kill adult insects. IGRs are generally less toxic to humans.
3.3 Nontoxic heat treatments
New methods of pest control are based on low-toxic solutions that can be more sustainable and effective than harsh chemicals; one such method is to use heat to eliminate insects. Rentokil’s Entotherm is a new solution that eradicates bedbugs and cockroaches. Rather than using sprays, which often do not penetrate the hard outer shell, the heat delivered by the Entotherm system kills insects from the inside through dehydration and damage to essential physiological processes. Another benefit is that the heat effectively kills all the life stages of insects—egg, larva, pupa, and adult, without needing to go over 56–60°C, which is high enough to kill the pests rapidly.
3.4 CRISPR technology to control pests
CRISPR gene editing tool is a method to alter key genes that regulate the fertility and sex determination of insects. CRISPR technology has allowed researchers to invent a new effective control technology which can be safe, self-limiting, and scalable genetic population for a specific species. It has the potential to be developed and utilized for a plethora of insect pests and disease vectors. This technology can be safely used in the field to suppress and even destroy target species.
3.5 Second-generation green products
Since last few years, the major focus surrounding green products has been from a public health perspective. The demand of green products is increasing and shifting to eco-protection. Nowadays, second-generation green products are emerging. These second-generation green products will have better ingredients, greater efficacy, and less disadvantages. For example, a first-generation insecticide containing plant essential oils may have an unpleasant smell. In contrast to this, the second-generation insecticide contains different amounts of the original ingredients or other materials, which reduces the smell, while it is still being effective.
3.6 Communication tools
The mobile data-capture devices can be introduced for pest control, which are able to capture real-time data about the location and nature of the pest problems and then store it in a central database online, which both facility managers and pest control professionals could access. This also made it simple to track multiple facilities and allowed for more timely corrective actions and more targeted pest-control treatments.
3.7 Rodent birth control
For the past few years, pest management used birth control for pest birds like pigeons as a means of managing populations. The rodent birth control may soon provide an effective way to control prolific breeders like mice and rats without negatively impacting many nontarget creatures. Be on the lookout for rodent birth control in the near future.
3.8 Fly baits
The fly bait stickers can be used near the food storage area or where the flies congregate. The small sticker is coated with insect food and an insecticide that has the ability to knockdown flies in just 1 min upon contact.
4. Conclusions
Conventional pesticides are toxic residues, pest resistance, secondary pests, and pest resurgence. Thus, they are not only dangerous to the environment but also hazardous to human health. In order to encourage organic farming, plant protection, and reduce pesticides’ usage in food products, pheromone traps and other modern technologies can play a crucial role. So, it necessary to apply novel technologies that result in producing high quality of food and better income generation.
\n',keywords:"pesticides, insects, agriculture, biological control",chapterPDFUrl:"https://cdn.intechopen.com/pdfs/73098.pdf",chapterXML:"https://mts.intechopen.com/source/xml/73098.xml",downloadPdfUrl:"/chapter/pdf-download/73098",previewPdfUrl:"/chapter/pdf-preview/73098",totalDownloads:867,totalViews:0,totalCrossrefCites:2,dateSubmitted:"July 19th 2020",dateReviewed:"August 6th 2020",datePrePublished:"August 31st 2020",datePublished:"November 3rd 2021",dateFinished:"August 31st 2020",readingETA:"0",abstract:"The major concern for farmers is important loss due to pests and diseases, which is regardless of any production system adopted. Plant pathogens, insects, and weed pests devastate over 40% of all possible sustenance creation every year. This loss happens despite utilizing approximately 3 million tons of pesticide per year in addition to the use of a variety of nonchemical controls such as biological controls and crop rotations. If some of this food could be saved from pest attack, it could be utilized to bolster an excess of 3 billion people who are malnourished in the world today. Expansive range of conventional insecticides such as carbamates, organophosphates, pyrethroids, and organochlorines were developed. They have been used to control insect pests in the course of recent decades, resulting in the reduction of the loss of agricultural yield. However, problems of resistance reaching crisis proportions, the extreme unfavorable impacts of pesticides on the environment, and public complaints led to stricter protocols and regulations directed to reduce their utilization. The pest control industry is continuously examining novel technologies and products that will improve the way to manage and prevent pests. The general objective is to likewise diminish the effects of various available pesticides on the environment and on nontarget creatures, besides the economic influence on bottom lines.",reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/73098",risUrl:"/chapter/ris/73098",signatures:"Meenu Agarwal and Ayushi Verma",book:{id:"10388",type:"book",title:"Heavy Metals",subtitle:"Their Environmental Impacts and Mitigation",fullTitle:"Heavy Metals - Their Environmental Impacts and Mitigation",slug:"heavy-metals-their-environmental-impacts-and-mitigation",publishedDate:"November 3rd 2021",bookSignature:"Mazen Khaled Nazal and Hongbo Zhao",coverURL:"https://cdn.intechopen.com/books/images_new/10388.jpg",licenceType:"CC BY 3.0",editedByType:"Edited by",isbn:"978-1-83968-122-6",printIsbn:"978-1-83968-121-9",pdfIsbn:"978-1-83968-402-9",isAvailableForWebshopOrdering:!0,editors:[{id:"214815",title:"Dr.",name:"Mazen",middleName:null,surname:"Nazal",slug:"mazen-nazal",fullName:"Mazen Nazal"}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"}},authors:[{id:"327646",title:"Assistant Prof.",name:"Ayushi",middleName:null,surname:"Verma",fullName:"Ayushi Verma",slug:"ayushi-verma",email:"ayushi.mtech@gmail.com",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:null},{id:"327652",title:"Mrs.",name:"Meenu",middleName:null,surname:"Aggarwal",fullName:"Meenu Aggarwal",slug:"meenu-aggarwal",email:"meenuagrawal06@gmail.com",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:null}],sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Literature review",level:"1"},{id:"sec_3",title:"3. New methods of pest control",level:"1"},{id:"sec_3_2",title:"3.1 Biorational products",level:"2"},{id:"sec_4_2",title:"3.2 Insect growth regulators (IGRs)",level:"2"},{id:"sec_5_2",title:"3.3 Nontoxic heat treatments",level:"2"},{id:"sec_6_2",title:"3.4 CRISPR technology to control pests",level:"2"},{id:"sec_7_2",title:"3.5 Second-generation green products",level:"2"},{id:"sec_8_2",title:"3.6 Communication tools",level:"2"},{id:"sec_9_2",title:"3.7 Rodent birth control",level:"2"},{id:"sec_10_2",title:"3.8 Fly baits",level:"2"},{id:"sec_12",title:"4. Conclusions",level:"1"}],chapterReferences:[{id:"B1",body:'Christiaans T, Eichner T, Pethig R. Optimal pest control in agriculture. Journal of Economic Dynamics and Control. 2007;31:3965-3985. DOI: 10.1016/j.jedc.2007.01'},{id:"B2",body:'Kross SM, Bourbour RP, Martinico BL. Agricultural land use, barn owl diet, and vertebrate pest control implications. Agriculture, Ecosystems & Environment. 2016;223:167-174. DOI: 10.1016/j.agee.2016.03.002'},{id:"B3",body:'Porto SMC, Valenti F, Arcidiacono C. Improving the effectiveness of heat treatment for insect pest control in flour mills by thermal simulations. Biosystems Engineering. 2017;164:189-199. DOI: 10.1016/J.BIOSYSTEMSENG.2017.10.015'},{id:"B4",body:'Douglas MR, Chang J, Ramasamy S. Evaluation of biorational insecticides and DNA barcoding as tools to improve insect pest management in lablab bean (Lablab purpureus) in Bangladesh. Journal of Asia-Pacific Entomology. 2018;21:1326-1336. DOI: 10.1016/j.aspen.2018.10.007'},{id:"B5",body:'Subbanna ARNS, Pattanayak A. Pesticidal prospectives of chitinolytic bacteria in agricultural pest management. Soil Biology and Biochemistry. 2018;116:52-66. DOI: 10.1016/j.soilbio.2017.09.019'},{id:"B6",body:'Zhang H, Potts SG, Breeze T, Bailey A. European farmers’ incentives to promote natural pest control service in arable fields. Land Use Policy. 2018;78:682-690. DOI: 10.1016/j.landusepol.2018.07.017'},{id:"B7",body:'Lindell C, Eaton RA, Howard PH, Roels SM, Shave ME. Enhancing agricultural landscapes to increase crop pest reduction by vertebrates. Agriculture, Ecosystems & Environment. 2018;257:1-11. DOI: 10.1016/j.agee.2018.01.028'},{id:"B8",body:'Basir FA, Banerjee A, Ray S. Role of farming awareness in crop pest management—A mathematical model. Journal of Theoretical Biology. 2019;461:59-67. DOI: 10.1016/j.jtbi.2018.10.043'},{id:"B9",body:'Djekic L, Kavallieratos NG, Rajkovic A. Pest control in Serbian and Greek food establishments—Opinions and knowledge. Food Control. 2019;98:281-289. DOI: 10.1016/j.foodcont.2018.11.045'},{id:"B10",body:'Smagghe G, Zotti M, Retnakaran A. Targeting female reproduction in insects with biorational insecticides for pest management: A critical review with suggestions for future research. Current Opinion in Insect Science. 2019;31:65-69. DOI: 10.1016/j.cois.2018.10.009'}],footnotes:[],contributors:[{corresp:null,contributorFullName:"Meenu Agarwal",address:null,affiliation:'
Department of Biotechnology, Noida Institute of Engineering and Technology, Greater Noida, U.P., India
Department of Biotechnology, Noida Institute of Engineering and Technology, Greater Noida, U.P., India
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She has numerous journal papers and conference publications in these areas.",institutionString:null,institution:{name:"Yıldız Technical University",institutionURL:null,country:{name:"Turkey"}}},{id:"106641",title:"Emeritus Prof.",name:"Nobuyuki",surname:"Tanaka",slug:"nobuyuki-tanaka",fullName:"Nobuyuki Tanaka",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/106641/images/1196_n.jpg",biography:null,institutionString:null,institution:{name:"Gunma University",institutionURL:null,country:{name:"Japan"}}},{id:"108080",title:"Prof.",name:"Toshinori",surname:"Okura",slug:"toshinori-okura",fullName:"Toshinori Okura",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Kogakuin University",institutionURL:null,country:{name:"Japan"}}},{id:"110949",title:"Prof.",name:"Masami",surname:"Sakamoto",slug:"masami-sakamoto",fullName:"Masami Sakamoto",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Chiba University",institutionURL:null,country:{name:"Japan"}}},{id:"112542",title:"Dr.",name:"Ali Erçin",surname:"Ersundu",slug:"ali-ercin-ersundu",fullName:"Ali Erçin Ersundu",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/112542/images/4000_n.jpg",biography:"Dr. Ali Erçin Ersundu is an Assistant Professor of Metallurgical and Materials Engineering at Yildiz Technical University, Istanbul, Turkey. He received his Ph.D. degree from Istanbul Technical University in 2013. During his Ph.D. studies, he also worked at the University of Illinois at Urbana-Champaign as a visiting scientist. He is the recipient of the best Ph.D. thesis award at Istanbul Technical University with his work on the determination of glass properties and phase equilibria of ternary tellurium oxide based systems. His current research interests include oxide-based glass systems, glass nanocomposites, amorphous semiconductors, sol-gel based multifunctional thin film coatings and radiation shielding materials.",institutionString:null,institution:{name:"Yıldız Technical University",institutionURL:null,country:{name:"Turkey"}}},{id:"112543",title:"Prof.",name:"Suheyla",surname:"Aydin",slug:"suheyla-aydin",fullName:"Suheyla Aydin",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Istanbul Technical University",institutionURL:null,country:{name:"Turkey"}}},{id:"124203",title:"MSc.",name:"Michal",surname:"Ejgenberg",slug:"michal-ejgenberg",fullName:"Michal Ejgenberg",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null}]},generic:{page:{slug:"attribution-policy",title:"Attribution Policy",intro:"
Definition of Terms:
\n\n
Book - collection of Works distributed in a book format, whose selection, coordination, preparation, and arrangement has been performed and published by IntechOpen, and in which the Work is included in its entirety in an unmodified form along with one or more other contributions, each constituting separate and independent sections, but together assembled into a collective whole.
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Work - a book Chapter (as well as Conference Papers), including any and all content, graphics, images and/or other materials forming part of, or accompanying, the Chapter/Conference Paper.
\\n\\n
Attribution – appropriate credit for the used Work or book.
\\n\\n
Creative Commons licenses – enable licensors to retain copyright while allowing others to use their Works in an appropriate way.
\\n\\n
Rules of Attribution for Works Published by IntechOpen
\\n\\n
With the purpose of protecting Authors' copyright and the transparent reuse of OA (Open Access) content, IntechOpen has developed Rules of Attribution of Works licensed under Creative Commons licenses.
\\n\\n
\\n\\t
All Chapters published in IntechOpen books prior to October 2011 are licensed under the Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported license (CC BY-NC-SA 3.0);
\\n\\t
All Chapters published in IntechOpen books after October 2011 are licensed under the Creative Commons Attribution 3.0 Unported license (CC BY 3.0);
\\n
\\n\\n
In case you reuse or republish any of the Works licensed under CC licenses, you must abide by the guidelines outlined below:
\\n\\n
1. Rules for reusing of books in their entirety or significant parts of books
\\n\\n
All rights to Books and other compilations published on the IntechOpen platform and in print are reserved by IntechOpen. The Copyright to Books and other compilations is subject to a separate Copyright from any that exists in the included Works.
\\n\\n
A Book in its entirety or a significant part of a Book cannot be translated freely without specific written consent by the publisher. Further information can be obtained at permissions@intechopen.com.
\\n\\n
In instances where permission is obtained from the publisher for reusing or republishing the Book, or significant parts of the Book, all of the following conditions apply:
\\n\\n
\\n\\t
Information about the first publisher must be provided – please note the fact that the material was originally published by IntechOpen as an OA (Open Access) publication must be acknowledged;
\\n\\t
All original Academic Editor(s) must be credited;
\\n\\t
Since you are reusing content that someone else created and allowed you to use freely, you must credit all Authors involved;
\\n\\t
The type of license that is available for the Works must be indicated, as well as a link to the license provided, so that others can investigate the terms of the license. You will be aware that the material can be used for free in consequence of the CC license attribution, so you must acknowledge that fact. It is not sufficient that the material is Creative Commons, because that says nothing about how the material can actually be used. There are different CC licenses and you have to identify the specific license that is being used;
\\n\\t
Any original Copyright Notices associated, with the Works which constitute the Book must be kept intact;
\\n\\t
Provision of the original title of the Book, as well as the original titles of any individual Works;
\\n\\t
Provision of the URL where the Book is hosted, with a notice to the effect that the Book is an OA (Open Access) publication;
\\n\\t
Provision of the URL to every individual Work which constitutes the Book with a notice that the Work is an OA (Open Access) publication. As the material has been accessed for free, it is incumbent upon you to provide the source so that others can also access it for free.
\\n
\\n\\n
Every single Work that is used has to be attributed in the way described. If you are unsure about proper attribution, please write to permissions@intechopen.com.
\\n\\n
2. Rules of attribution for works published by IntechOpen
\\n\\n
Individual Works originally published in IntechOpen books are licensed under Creative Commons licenses and can be freely used under terms of the respective CC license, if properly attributed. In order to properly attribute the Work you must respect all the conditions outlined below:
\\n\\n
\\n\\t
Credit all Authors – since you are reusing contents that someone created and allowed you to use freely, you have to acknowledge authorship;
\\n\\t
Indicate the type of license under which the Work is available and provide the URL to the license so others can find out the license terms. Preferably keep intact any original Copyright Notice associated with the Chapter (if any). You will be aware that the material can be used for free in consequence of the CC license attribution, so you must acknowledge that fact. It is not sufficient that the material is Creative Commons, because that says nothing about how the material can actually be used. There are different CC licenses and you have to identify the specific license that is being used;
\\n\\t
Provide the URL where the Work is hosted, preferably providing the original title of the Work, as well as the original title of the Book with a notification that the Work is an OA (Open Access) publication. As the material has been accessed for free, it is incumbent upon you to provide the source so that others can also access it for free;
\\n\\t
Provide information about the first publisher – please note the fact that the material was originally published by IntechOpen as an OA (Open Access) Work must be acknowledged.
\\n
\\n\\n
Every single Work that is used has to be attributed in the way as described. If you are unsure about proper attribution, please contact Us at permissions@intechopen.com.
\\n\\n
In the event that you use more than one of IntechOpen's Works published in one or more books (but not a significant part of the book that is under separate Copyright), each of these have to be properly attributed in the way described.
\\n\\n
IntechOpen does not have any claims on newly created copyrighted Works, but the Works originally published by IntechOpen must be properly attributed.
\\n\\n
All these rules apply to BOTH online and offline use.
\\n\\n
Parts of the Rules of Attribution are based on Work Attributing Creative Commons Materials published by the Australian Research Council Centre of Excellence for Creative Industries and Innovation, in partnership with Creative Commons Australia, which can be found at creativecommons.org.au licensed under Creative Commons Attribution 2.5 Australia license, and Best practices for attribution published by Creative Commons, which can be found at wiki.creativecommons.org under the Creative Commons Attribution 4.0 license.
\\n\\n
All the above rules are subject to change, IntechOpen reserves the right to take appropriate action if any of the conditions outlined above are not met.
Work - a book Chapter (as well as Conference Papers), including any and all content, graphics, images and/or other materials forming part of, or accompanying, the Chapter/Conference Paper.
\n\n
Attribution – appropriate credit for the used Work or book.
\n\n
Creative Commons licenses – enable licensors to retain copyright while allowing others to use their Works in an appropriate way.
\n\n
Rules of Attribution for Works Published by IntechOpen
\n\n
With the purpose of protecting Authors' copyright and the transparent reuse of OA (Open Access) content, IntechOpen has developed Rules of Attribution of Works licensed under Creative Commons licenses.
\n\n
\n\t
All Chapters published in IntechOpen books prior to October 2011 are licensed under the Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported license (CC BY-NC-SA 3.0);
\n\t
All Chapters published in IntechOpen books after October 2011 are licensed under the Creative Commons Attribution 3.0 Unported license (CC BY 3.0);
\n
\n\n
In case you reuse or republish any of the Works licensed under CC licenses, you must abide by the guidelines outlined below:
\n\n
1. Rules for reusing of books in their entirety or significant parts of books
\n\n
All rights to Books and other compilations published on the IntechOpen platform and in print are reserved by IntechOpen. The Copyright to Books and other compilations is subject to a separate Copyright from any that exists in the included Works.
\n\n
A Book in its entirety or a significant part of a Book cannot be translated freely without specific written consent by the publisher. Further information can be obtained at permissions@intechopen.com.
\n\n
In instances where permission is obtained from the publisher for reusing or republishing the Book, or significant parts of the Book, all of the following conditions apply:
\n\n
\n\t
Information about the first publisher must be provided – please note the fact that the material was originally published by IntechOpen as an OA (Open Access) publication must be acknowledged;
\n\t
All original Academic Editor(s) must be credited;
\n\t
Since you are reusing content that someone else created and allowed you to use freely, you must credit all Authors involved;
\n\t
The type of license that is available for the Works must be indicated, as well as a link to the license provided, so that others can investigate the terms of the license. You will be aware that the material can be used for free in consequence of the CC license attribution, so you must acknowledge that fact. It is not sufficient that the material is Creative Commons, because that says nothing about how the material can actually be used. There are different CC licenses and you have to identify the specific license that is being used;
\n\t
Any original Copyright Notices associated, with the Works which constitute the Book must be kept intact;
\n\t
Provision of the original title of the Book, as well as the original titles of any individual Works;
\n\t
Provision of the URL where the Book is hosted, with a notice to the effect that the Book is an OA (Open Access) publication;
\n\t
Provision of the URL to every individual Work which constitutes the Book with a notice that the Work is an OA (Open Access) publication. As the material has been accessed for free, it is incumbent upon you to provide the source so that others can also access it for free.
\n
\n\n
Every single Work that is used has to be attributed in the way described. If you are unsure about proper attribution, please write to permissions@intechopen.com.
\n\n
2. Rules of attribution for works published by IntechOpen
\n\n
Individual Works originally published in IntechOpen books are licensed under Creative Commons licenses and can be freely used under terms of the respective CC license, if properly attributed. In order to properly attribute the Work you must respect all the conditions outlined below:
\n\n
\n\t
Credit all Authors – since you are reusing contents that someone created and allowed you to use freely, you have to acknowledge authorship;
\n\t
Indicate the type of license under which the Work is available and provide the URL to the license so others can find out the license terms. Preferably keep intact any original Copyright Notice associated with the Chapter (if any). You will be aware that the material can be used for free in consequence of the CC license attribution, so you must acknowledge that fact. It is not sufficient that the material is Creative Commons, because that says nothing about how the material can actually be used. There are different CC licenses and you have to identify the specific license that is being used;
\n\t
Provide the URL where the Work is hosted, preferably providing the original title of the Work, as well as the original title of the Book with a notification that the Work is an OA (Open Access) publication. As the material has been accessed for free, it is incumbent upon you to provide the source so that others can also access it for free;
\n\t
Provide information about the first publisher – please note the fact that the material was originally published by IntechOpen as an OA (Open Access) Work must be acknowledged.
\n
\n\n
Every single Work that is used has to be attributed in the way as described. If you are unsure about proper attribution, please contact Us at permissions@intechopen.com.
\n\n
In the event that you use more than one of IntechOpen's Works published in one or more books (but not a significant part of the book that is under separate Copyright), each of these have to be properly attributed in the way described.
\n\n
IntechOpen does not have any claims on newly created copyrighted Works, but the Works originally published by IntechOpen must be properly attributed.
\n\n
All these rules apply to BOTH online and offline use.
\n\n
Parts of the Rules of Attribution are based on Work Attributing Creative Commons Materials published by the Australian Research Council Centre of Excellence for Creative Industries and Innovation, in partnership with Creative Commons Australia, which can be found at creativecommons.org.au licensed under Creative Commons Attribution 2.5 Australia license, and Best practices for attribution published by Creative Commons, which can be found at wiki.creativecommons.org under the Creative Commons Attribution 4.0 license.
\n\n
All the above rules are subject to change, IntechOpen reserves the right to take appropriate action if any of the conditions outlined above are not met.
\n\n
Policy last updated: 2016-06-09
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His studies in robotics lead him not only to a PhD degree but also inspired him to co-found and build the International Journal of Advanced Robotic Systems - world's first Open Access journal in the field of robotics.",institutionString:null,institution:{name:"TU Wien",country:{name:"Austria"}}},{id:"441",title:"Ph.D.",name:"Jaekyu",middleName:null,surname:"Park",slug:"jaekyu-park",fullName:"Jaekyu Park",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/441/images/1881_n.jpg",biography:null,institutionString:null,institution:{name:"LG Corporation (South Korea)",country:{name:"Korea, South"}}},{id:"465",title:"Dr.",name:"Christian",middleName:null,surname:"Martens",slug:"christian-martens",fullName:"Christian Martens",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Rheinmetall (Germany)",country:{name:"Germany"}}},{id:"479",title:"Dr.",name:"Valentina",middleName:null,surname:"Colla",slug:"valentina-colla",fullName:"Valentina Colla",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/479/images/358_n.jpg",biography:null,institutionString:null,institution:{name:"Sant'Anna School of Advanced Studies",country:{name:"Italy"}}},{id:"494",title:"PhD",name:"Loris",middleName:null,surname:"Nanni",slug:"loris-nanni",fullName:"Loris Nanni",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/494/images/system/494.jpg",biography:"Loris Nanni received his Master Degree cum laude on June-2002 from the University of Bologna, and the April 26th 2006 he received his Ph.D. in Computer Engineering at DEIS, University of Bologna. On September, 29th 2006 he has won a post PhD fellowship from the university of Bologna (from October 2006 to October 2008), at the competitive examination he was ranked first in the industrial engineering area. He extensively served as referee for several international journals. He is author/coauthor of more than 100 research papers. He has been involved in some projects supported by MURST and European Community. His research interests include pattern recognition, bioinformatics, and biometric systems (fingerprint classification and recognition, signature verification, face recognition).",institutionString:null,institution:null},{id:"496",title:"Dr.",name:"Carlos",middleName:null,surname:"Leon",slug:"carlos-leon",fullName:"Carlos Leon",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Seville",country:{name:"Spain"}}},{id:"512",title:"Dr.",name:"Dayang",middleName:null,surname:"Jawawi",slug:"dayang-jawawi",fullName:"Dayang Jawawi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Technology Malaysia",country:{name:"Malaysia"}}},{id:"528",title:"Dr.",name:"Kresimir",middleName:null,surname:"Delac",slug:"kresimir-delac",fullName:"Kresimir Delac",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/528/images/system/528.jpg",biography:"K. Delac received his B.Sc.E.E. degree in 2003 and is currentlypursuing a Ph.D. degree at the University of Zagreb, Faculty of Electrical Engineering andComputing. His current research interests are digital image analysis, pattern recognition andbiometrics.",institutionString:null,institution:{name:"University of Zagreb",country:{name:"Croatia"}}},{id:"557",title:"Dr.",name:"Andon",middleName:"Venelinov",surname:"Topalov",slug:"andon-topalov",fullName:"Andon Topalov",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/557/images/1927_n.jpg",biography:"Dr. Andon V. Topalov received the MSc degree in Control Engineering from the Faculty of Information Systems, Technologies, and Automation at Moscow State University of Civil Engineering (MGGU) in 1979. He then received his PhD degree in Control Engineering from the Department of Automation and Remote Control at Moscow State Mining University (MGSU), Moscow, in 1984. From 1985 to 1986, he was a Research Fellow in the Research Institute for Electronic Equipment, ZZU AD, Plovdiv, Bulgaria. In 1986, he joined the Department of Control Systems, Technical University of Sofia at the Plovdiv campus, where he is presently a Full Professor. He has held long-term visiting Professor/Scholar positions at various institutions in South Korea, Turkey, Mexico, Greece, Belgium, UK, and Germany. And he has coauthored one book and authored or coauthored more than 80 research papers in conference proceedings and journals. 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After finishing his P. hD degree in 1992, he served in the Industry as a Scientific Officer and continued his academic career as a visiting scholar for a number of educational institutions. In 1996 he joined National University of Science & Technology Pakistan (NUST) as an Associate Professor; NUST is one of the top few universities in Pakistan. In 1999 he joined an International Company Lineo Inc, Canada as Manager Compiler Group, where he headed the group for developing Compiler Tool Chain and Porting of Operating Systems for the BLACKfin processor. The processor development was a joint venture by Intel and Analog Devices. In 2002 Lineo Inc., was taken over by another company, so he joined Aalborg University Denmark as an Assistant Professor.\nProfessor Akbar has truly a multi-disciplined career and he continued his legacy and making progress in many areas of his interests both in teaching and research. 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\r\n\tTransforming our World: the 2030 Agenda for Sustainable Development endorsed by United Nations and 193 Member States, came into effect on Jan 1, 2016, to guide decision making and actions to the year 2030 and beyond. Central to this Agenda are 17 Goals, 169 associated targets and over 230 indicators that are reviewed annually. The vision envisaged in the implementation of the SDGs is centered on the five Ps: People, Planet, Prosperity, Peace and Partnership. This call for renewed focused efforts ensure we have a safe and healthy planet for current and future generations.
\r\n
\r\n\t
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\r\n\tThis Series focuses on covering research and applied research involving the five Ps through the following topics:
\r\n
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\r\n
\r\n\t1. Sustainable Economy and Fair Society that relates to SDG 1 on No Poverty, SDG 2 on Zero Hunger, SDG 8 on Decent Work and Economic Growth, SDG 10 on Reduced Inequalities, SDG 12 on Responsible Consumption and Production, and SDG 17 Partnership for the Goals
\r\n
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\r\n\t2. Health and Wellbeing focusing on SDG 3 on Good Health and Wellbeing and SDG 6 on Clean Water and Sanitation
\r\n
\r\n\t
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\r\n\t3. Inclusivity and Social Equality involving SDG 4 on Quality Education, SDG 5 on Gender Equality, and SDG 16 on Peace, Justice and Strong Institutions
\r\n
\r\n\t
\r\n
\r\n\t4. Climate Change and Environmental Sustainability comprising SDG 13 on Climate Action, SDG 14 on Life Below Water, and SDG 15 on Life on Land
\r\n
\r\n\t
\r\n
\r\n\t5. Urban Planning and Environmental Management embracing SDG 7 on Affordable Clean Energy, SDG 9 on Industry, Innovation and Infrastructure, and SDG 11 on Sustainable Cities and Communities.
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\r\n\t
\r\n
\r\n\tThe series also seeks to support the use of cross cutting SDGs, as many of the goals listed above, targets and indicators are all interconnected to impact our lives and the decisions we make on a daily basis, making them impossible to tie to a single topic.
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Saxena",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRET3QAO/Profile_Picture_2022-05-10T10:10:26.jpeg",institutionString:"King George's Medical University",institution:{name:"King George's Medical University",institutionURL:null,country:{name:"India"}}}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null}]},subseriesFiltersForPublishedBooks:[{group:"subseries",caption:"Bacterial Infectious Diseases",value:3,count:2},{group:"subseries",caption:"Parasitic Infectious Diseases",value:5,count:4},{group:"subseries",caption:"Viral Infectious Diseases",value:6,count:7}],publicationYearFilters:[{group:"publicationYear",caption:"2022",value:2022,count:2},{group:"publicationYear",caption:"2021",value:2021,count:4},{group:"publicationYear",caption:"2020",value:2020,count:3},{group:"publicationYear",caption:"2019",value:2019,count:3},{group:"publicationYear",caption:"2018",value:2018,count:1}],authors:{paginationCount:229,paginationItems:[{id:"318170",title:"Dr.",name:"Aneesa",middleName:null,surname:"Moolla",slug:"aneesa-moolla",fullName:"Aneesa Moolla",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/318170/images/system/318170.png",biography:"Dr. Aneesa Moolla has extensive experience in the diverse fields of health care having previously worked in dental private practice, at the Red Cross Flying Doctors association, and in healthcare corporate settings. She is now a lecturer at the University of Witwatersrand, South Africa, and a principal researcher at the Health Economics and Epidemiology Research Office (HE2RO), South Africa. Dr. Moolla holds a Ph.D. in Psychology with her research being focused on mental health and resilience. In her professional work capacity, her research has further expanded into the fields of early childhood development, mental health, the HIV and TB care cascades, as well as COVID. She is also a UNESCO-trained International Bioethics Facilitator.",institutionString:"University of the Witwatersrand",institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"419588",title:"Ph.D.",name:"Sergio",middleName:"Alexandre",surname:"Gehrke",slug:"sergio-gehrke",fullName:"Sergio Gehrke",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y000038WgMKQA0/Profile_Picture_2022-06-02T11:44:20.jpg",biography:"Dr. Sergio Alexandre Gehrke is a doctorate holder in two fields. The first is a Ph.D. in Cellular and Molecular Biology from the Pontificia Catholic University, Porto Alegre, Brazil, in 2010 and the other is an International Ph.D. in Bioengineering from the Universidad Miguel Hernandez, Elche/Alicante, Spain, obtained in 2020. In 2018, he completed a postdoctoral fellowship in Materials Engineering in the NUCLEMAT of the Pontificia Catholic University, Porto Alegre, Brazil. He is currently the Director of the Postgraduate Program in Implantology of the Bioface/UCAM/PgO (Montevideo, Uruguay), Director of the Cathedra of Biotechnology of the Catholic University of Murcia (Murcia, Spain), an Extraordinary Full Professor of the Catholic University of Murcia (Murcia, Spain) as well as the Director of the private center of research Biotecnos – Technology and Science (Montevideo, Uruguay). Applied biomaterials, cellular and molecular biology, and dental implants are among his research interests. He has published several original papers in renowned journals. In addition, he is also a Collaborating Professor in several Postgraduate programs at different universities all over the world.",institutionString:null,institution:{name:"Universidad Católica San Antonio de Murcia",country:{name:"Spain"}}},{id:"342152",title:"Dr.",name:"Santo",middleName:null,surname:"Grace Umesh",slug:"santo-grace-umesh",fullName:"Santo Grace Umesh",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/342152/images/16311_n.jpg",biography:null,institutionString:null,institution:{name:"SRM Dental College",country:{name:"India"}}},{id:"333647",title:"Dr.",name:"Shreya",middleName:null,surname:"Kishore",slug:"shreya-kishore",fullName:"Shreya Kishore",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/333647/images/14701_n.jpg",biography:"Dr. Shreya Kishore completed her Bachelor in Dental Surgery in Chettinad Dental College and Research Institute, Chennai, and her Master of Dental Surgery (Orthodontics) in Saveetha Dental College, Chennai. She is also Invisalign certified. She’s working as a Senior Lecturer in the Department of Orthodontics, SRM Dental College since November 2019. She is actively involved in teaching orthodontics to the undergraduates and the postgraduates. Her clinical research topics include new orthodontic brackets, fixed appliances and TADs. She’s published 4 articles in well renowned indexed journals and has a published patency of her own. Her private practice is currently limited to orthodontics and works as a consultant in various clinics.",institutionString:null,institution:{name:"SRM Dental College",country:{name:"India"}}},{id:"323731",title:"Prof.",name:"Deepak M.",middleName:"Macchindra",surname:"Vikhe",slug:"deepak-m.-vikhe",fullName:"Deepak M. Vikhe",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/323731/images/13613_n.jpg",biography:"Dr Deepak M.Vikhe .\n\n\t\n\tDr Deepak M.Vikhe , completed his Masters & PhD in Prosthodontics from Rural Dental College, Loni securing third rank in the Pravara Institute of Medical Sciences Deemed University. He was awarded Dr.G.C.DAS Memorial Award for Research on Implants at 39th IPS conference Dubai (U A E).He has two patents under his name. He has received Dr.Saraswati medal award for best research for implant study in 2017.He has received Fully funded scholarship to Spain ,university of Santiago de Compostela. He has completed fellowship in Implantlogy from Noble Biocare. \nHe has attended various conferences and CDE programmes and has national publications to his credit. His field of interest is in Implant supported prosthesis. Presently he is working as a associate professor in the Dept of Prosthodontics, Rural Dental College, Loni and maintains a successful private practice specialising in Implantology at Rahata.\n\nEmail: drdeepak_mvikhe@yahoo.com..................",institutionString:null,institution:{name:"Pravara Institute of Medical Sciences",country:{name:"India"}}},{id:"204110",title:"Dr.",name:"Ahmed A.",middleName:null,surname:"Madfa",slug:"ahmed-a.-madfa",fullName:"Ahmed A. Madfa",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/204110/images/system/204110.jpg",biography:"Dr. Madfa is currently Associate Professor of Endodontics at Thamar University and a visiting lecturer at Sana'a University and University of Sciences and Technology. He has more than 6 years of experience in teaching. His research interests include root canal morphology, functionally graded concept, dental biomaterials, epidemiology and dental education, biomimetic restoration, finite element analysis and endodontic regeneration. Dr. Madfa has numerous international publications, full articles, two patents, a book and a book chapter. Furthermore, he won 14 international scientific awards. Furthermore, he is involved in many academic activities ranging from editorial board member, reviewer for many international journals and postgraduate students' supervisor. Besides, I deliver many courses and training workshops at various scientific events. Dr. Madfa also regularly attends international conferences and holds administrative positions (Deputy Dean of the Faculty for Students’ & Academic Affairs and Deputy Head of Research Unit).",institutionString:"Thamar University",institution:null},{id:"210472",title:"Dr.",name:"Nermin",middleName:"Mohammed Ahmed",surname:"Yussif",slug:"nermin-yussif",fullName:"Nermin Yussif",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/210472/images/system/210472.jpg",biography:"Dr. Nermin Mohammed Ahmed Yussif is working at the Faculty of dentistry, University for October university for modern sciences and arts (MSA). Her areas of expertise include: periodontology, dental laserology, oral implantology, periodontal plastic surgeries, oral mesotherapy, nutrition, dental pharmacology. She is an editor and reviewer in numerous international journals.",institutionString:"MSA University",institution:null},{id:"204606",title:"Dr.",name:"Serdar",middleName:null,surname:"Gözler",slug:"serdar-gozler",fullName:"Serdar Gözler",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/204606/images/system/204606.jpeg",biography:"Dr. Serdar Gözler has completed his undergraduate studies at the Marmara University Faculty of Dentistry in 1978, followed by an assistantship in the Prosthesis Department of Dicle University Faculty of Dentistry. Starting his PhD work on non-resilient overdentures with Assoc. Prof. Hüsnü Yavuzyılmaz, he continued his studies with Prof. Dr. Gürbüz Öztürk of Istanbul University Faculty of Dentistry Department of Prosthodontics, this time on Gnatology. He attended training programs on occlusion, neurology, neurophysiology, EMG, radiology and biostatistics. In 1982, he presented his PhD thesis \\Gerber and Lauritzen Occlusion Analysis Techniques: Diagnosis Values,\\ at Istanbul University School of Dentistry, Department of Prosthodontics. As he was also working with Prof. Senih Çalıkkocaoğlu on The Physiology of Chewing at the same time, Gözler has written a chapter in Çalıkkocaoğlu\\'s book \\Complete Prostheses\\ entitled \\The Place of Neuromuscular Mechanism in Prosthetic Dentistry.\\ The book was published five times since by the Istanbul University Publications. Having presented in various conferences about occlusion analysis until 1998, Dr. Gözler has also decided to use the T-Scan II occlusion analysis method. Having been personally trained by Dr. Robert Kerstein on this method, Dr. Gözler has been lecturing on the T-Scan Occlusion Analysis Method in conferences both in Turkey and abroad. Dr. Gözler has various articles and presentations on Digital Occlusion Analysis methods. He is now Head of the TMD Clinic at Prosthodontic Department of Faculty of Dentistry , Istanbul Aydın University , Turkey.",institutionString:"Istanbul Aydin University",institution:{name:"Istanbul Aydın University",country:{name:"Turkey"}}},{id:"256417",title:"Associate Prof.",name:"Sanaz",middleName:null,surname:"Sadry",slug:"sanaz-sadry",fullName:"Sanaz Sadry",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/256417/images/8106_n.jpg",biography:null,institutionString:null,institution:{name:"Istanbul Aydın University",country:{name:"Turkey"}}},{id:"240870",title:"Ph.D.",name:"Alaa Eddin Omar",middleName:null,surname:"Al Ostwani",slug:"alaa-eddin-omar-al-ostwani",fullName:"Alaa Eddin Omar Al Ostwani",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/240870/images/system/240870.jpeg",biography:"Dr. Al Ostwani Alaa Eddin Omar received his Master in dentistry from Damascus University in 2010, and his Ph.D. in Pediatric Dentistry from Damascus University in 2014. Dr. Al Ostwani is an assistant professor and faculty member at IUST University since 2014. \nDuring his academic experience, he has received several awards including the scientific research award from the Union of Arab Universities, the Syrian gold medal and the international gold medal for invention and creativity. Dr. Al Ostwani is a Member of the International Association of Dental Traumatology and the Syrian Society for Research and Preventive Dentistry since 2017. He is also a Member of the Reviewer Board of International Journal of Dental Medicine (IJDM), and the Indian Journal of Conservative and Endodontics since 2016.",institutionString:"International University for Science and Technology.",institution:{name:"Islamic University of Science and Technology",country:{name:"India"}}},{id:"42847",title:"Dr.",name:"Belma",middleName:null,surname:"Işik Aslan",slug:"belma-isik-aslan",fullName:"Belma Işik Aslan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/42847/images/system/42847.jpg",biography:"Dr. Belma IşIk Aslan was born in 1976 in Ankara-TURKEY. After graduating from TED Ankara College in 1994, she attended to Gazi University, Faculty of Dentistry in Ankara. She completed her PhD in orthodontic education at Gazi University between 1999-2005. Dr. Işık Aslan stayed at the Providence Hospital Craniofacial Institude and Reconstructive Surgery in Michigan, USA for three months as an observer. She worked as a specialist doctor at Gazi University, Dentistry Faculty, Department of Orthodontics between 2005-2014. She was appointed as associate professor in January, 2014 and as professor in 2021. Dr. Işık Aslan still works as an instructor at the same faculty. She has published a total of 35 articles, 10 book chapters, 39 conference proceedings both internationally and nationally. Also she was the academic editor of the international book 'Current Advances in Orthodontics'. She is a member of the Turkish Orthodontic Society and Turkish Cleft Lip and Palate Society. She is married and has 2 children. Her knowledge of English is at an advanced level.",institutionString:"Gazi University Dentistry Faculty Department of Orthodontics",institution:null},{id:"202198",title:"Dr.",name:"Buket",middleName:null,surname:"Aybar",slug:"buket-aybar",fullName:"Buket Aybar",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/202198/images/6955_n.jpg",biography:"Buket Aybar, DDS, PhD, was born in 1971. She graduated from Istanbul University, Faculty of Dentistry, in 1992 and completed her PhD degree on Oral and Maxillofacial Surgery in Istanbul University in 1997.\r\nDr. Aybar is currently a full-time professor in Istanbul University, Faculty of Dentistry Department of Oral and Maxillofacial Surgery. She has teaching responsibilities in graduate and postgraduate programs. Her clinical practice includes mainly dentoalveolar surgery.\r\nHer topics of interest are biomaterials science and cell culture studies. She has many articles in international and national scientific journals and chapters in books; she also has participated in several scientific projects supported by Istanbul University Research fund.",institutionString:null,institution:{name:"Marmara University",country:{name:"Turkey"}}},{id:"178412",title:"Associate Prof.",name:"Guhan",middleName:null,surname:"Dergin",slug:"guhan-dergin",fullName:"Guhan Dergin",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/178412/images/6954_n.jpg",biography:"Assoc. Prof. Dr. Gühan Dergin was born in 1973 in Izmit. He graduated from Marmara University Faculty of Dentistry in 1999. He completed his specialty of OMFS surgery in Marmara University Faculty of Dentistry and obtained his PhD degree in 2006. In 2005, he was invited as a visiting doctor in the Oral and Maxillofacial Surgery Department of the University of North Carolina, USA, where he went on a scholarship. Dr. Dergin still continues his academic career as an associate professor in Marmara University Faculty of Dentistry. He has many articles in international and national scientific journals and chapters in books.",institutionString:null,institution:{name:"Marmara University",country:{name:"Turkey"}}},{id:"178414",title:"Prof.",name:"Yusuf",middleName:null,surname:"Emes",slug:"yusuf-emes",fullName:"Yusuf Emes",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/178414/images/6953_n.jpg",biography:"Born in Istanbul in 1974, Dr. Emes graduated from Istanbul University Faculty of Dentistry in 1997 and completed his PhD degree in Istanbul University faculty of Dentistry Department of Oral and Maxillofacial Surgery in 2005. He has papers published in international and national scientific journals, including research articles on implantology, oroantral fistulas, odontogenic cysts, and temporomandibular disorders. Dr. Emes is currently working as a full-time academic staff in Istanbul University faculty of Dentistry Department of Oral and Maxillofacial Surgery.",institutionString:null,institution:{name:"Istanbul University",country:{name:"Turkey"}}},{id:"192229",title:"Ph.D.",name:"Ana Luiza",middleName:null,surname:"De Carvalho Felippini",slug:"ana-luiza-de-carvalho-felippini",fullName:"Ana Luiza De Carvalho Felippini",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/192229/images/system/192229.jpg",biography:null,institutionString:"University of São Paulo",institution:{name:"University of Sao Paulo",country:{name:"Brazil"}}},{id:"256851",title:"Prof.",name:"Ayşe",middleName:null,surname:"Gülşen",slug:"ayse-gulsen",fullName:"Ayşe Gülşen",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/256851/images/9696_n.jpg",biography:"Dr. Ayşe Gülşen graduated in 1990 from Faculty of Dentistry, University of Ankara and did a postgraduate program at University of Gazi. \nShe worked as an observer and research assistant in Craniofacial Surgery Departments in New York, Providence Hospital in Michigan and Chang Gung Memorial Hospital in Taiwan. \nShe works as Craniofacial Orthodontist in Department of Aesthetic, Plastic and Reconstructive Surgery, Faculty of Medicine, University of Gazi, Ankara Turkey since 2004.",institutionString:"Orthodontist, Assoc Prof in the Department of Aesthetic, Plastic and Reconstructive Surgery, Faculty of Medicine, University of Gazi",institution:null},{id:"255366",title:"Prof.",name:"Tosun",middleName:null,surname:"Tosun",slug:"tosun-tosun",fullName:"Tosun Tosun",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/255366/images/7347_n.jpg",biography:"Graduated at the Faculty of Dentistry, University of Istanbul, Turkey in 1989;\nVisitor Assistant at the University of Padua, Italy and Branemark Osseointegration Center of Treviso, Italy between 1993-94;\nPhD thesis on oral implantology in University of Istanbul and was awarded the academic title “Dr.med.dent.”, 1997;\nHe was awarded the academic title “Doç.Dr.” (Associated Professor) in 2003;\nProficiency in Botulinum Toxin Applications, Reading-UK in 2009;\nMastership, RWTH Certificate in Laser Therapy in Dentistry, AALZ-Aachen University, Germany 2009-11;\nMaster of Science (MSc) in Laser Dentistry, University of Genoa, Italy 2013-14.\n\nDr.Tosun worked as Research Assistant in the Department of Oral Implantology, Faculty of Dentistry, University of Istanbul between 1990-2002. \nHe worked part-time as Consultant surgeon in Harvard Medical International Hospitals and John Hopkins Medicine, Istanbul between years 2007-09.\u2028He was contract Professor in the Department of Surgical and Diagnostic Sciences (DI.S.C.), Medical School, University of Genova, Italy between years 2011-16. \nSince 2015 he is visiting Professor at Medical School, University of Plovdiv, Bulgaria. \nCurrently he is Associated Prof.Dr. at the Dental School, Oral Surgery Dept., Istanbul Aydin University and since 2003 he works in his own private clinic in Istanbul, Turkey.\u2028\nDr.Tosun is reviewer in journal ‘Laser in Medical Sciences’, reviewer in journal ‘Folia Medica\\', a Fellow of the International Team for Implantology, Clinical Lecturer of DGZI German Association of Oral Implantology, Expert Lecturer of Laser&Health Academy, Country Representative of World Federation for Laser Dentistry, member of European Federation of Periodontology, member of Academy of Laser Dentistry. Dr.Tosun presents papers in international and national congresses and has scientific publications in international and national journals. He speaks english, spanish, italian and french.",institutionString:null,institution:{name:"Istanbul Aydın University",country:{name:"Turkey"}}},{id:"260116",title:"Dr.",name:"Mehmet",middleName:null,surname:"Yaltirik",slug:"mehmet-yaltirik",fullName:"Mehmet Yaltirik",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/260116/images/7413_n.jpg",biography:"Birth Date 25.09.1965\r\nBirth Place Adana- Turkey\r\nSex Male\r\nMarrial Status Bachelor\r\nDriving License Acquired\r\nMother Tongue Turkish\r\n\r\nAddress:\r\nWork:University of Istanbul,Faculty of Dentistry, Department of Oral Surgery and Oral Medicine 34093 Capa,Istanbul- TURKIYE",institutionString:null,institution:{name:"Istanbul University",country:{name:"Turkey"}}},{id:"171887",title:"Prof.",name:"Zühre",middleName:null,surname:"Akarslan",slug:"zuhre-akarslan",fullName:"Zühre Akarslan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/171887/images/system/171887.jpg",biography:"Zühre Akarslan was born in 1977 in Cyprus. She graduated from Gazi University Faculty of Dentistry, Ankara, Turkey in 2000. \r\nLater she received her Ph.D. degree from the Oral Diagnosis and Radiology Department; which was recently renamed as Oral and Dentomaxillofacial Radiology, from the same university. \r\nShe is working as a full-time Associate Professor and is a lecturer and an academic researcher. \r\nHer expertise areas are dental caries, cancer, dental fear and anxiety, gag reflex in dentistry, oral medicine, and dentomaxillofacial radiology.",institutionString:"Gazi University",institution:{name:"Gazi University",country:{name:"Turkey"}}},{id:"272237",title:"Dr.",name:"Pinar",middleName:"Kiymet",surname:"Karataban",slug:"pinar-karataban",fullName:"Pinar Karataban",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/272237/images/8911_n.png",biography:"Assist.Prof.Dr.Pınar Kıymet Karataban, DDS PhD \n\nDr.Pınar Kıymet Karataban was born in Istanbul in 1975. After her graduation from Marmara University Faculty of Dentistry in 1998 she started her PhD in Paediatric Dentistry focused on children with special needs; mainly children with Cerebral Palsy. She finished her pHD thesis entitled \\'Investigation of occlusion via cast analysis and evaluation of dental caries prevalance, periodontal status and muscle dysfunctions in children with cerebral palsy” in 2008. She got her Assist. Proffessor degree in Istanbul Aydın University Paediatric Dentistry Department in 2015-2018. ın 2019 she started her new career in Bahcesehir University, Istanbul as Head of Department of Pediatric Dentistry. In 2020 she was accepted to BAU International University, Batumi as Professor of Pediatric Dentistry. She’s a lecturer in the same university meanwhile working part-time in private practice in Ege Dental Studio (https://www.egedisklinigi.com/) a multidisciplinary dental clinic in Istanbul. Her main interests are paleodontology, ancient and contemporary dentistry, oral microbiology, cerebral palsy and special care dentistry. She has national and international publications, scientific reports and is a member of IAPO (International Association for Paleodontology), IADH (International Association of Disability and Oral Health) and EAPD (European Association of Pediatric Dentistry).",institutionString:null,institution:null},{id:"172009",title:"Dr.",name:"Fatma Deniz",middleName:null,surname:"Uzuner",slug:"fatma-deniz-uzuner",fullName:"Fatma Deniz Uzuner",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/172009/images/7122_n.jpg",biography:"Dr. Deniz Uzuner was born in 1969 in Kocaeli-TURKEY. After graduating from TED Ankara College in 1986, she attended the Hacettepe University, Faculty of Dentistry in Ankara. \nIn 1993 she attended the Gazi University, Faculty of Dentistry, Department of Orthodontics for her PhD education. After finishing the PhD education, she worked as orthodontist in Ankara Dental Hospital under the Turkish Government, Ministry of Health and in a special Orthodontic Clinic till 2011. Between 2011 and 2016, Dr. Deniz Uzuner worked as a specialist in the Department of Orthodontics, Faculty of Dentistry, Gazi University in Ankara/Turkey. In 2016, she was appointed associate professor. Dr. Deniz Uzuner has authored 23 Journal Papers, 3 Book Chapters and has had 39 oral/poster presentations. She is a member of the Turkish Orthodontic Society. Her knowledge of English is at an advanced level.",institutionString:null,institution:null},{id:"332914",title:"Dr.",name:"Muhammad Saad",middleName:null,surname:"Shaikh",slug:"muhammad-saad-shaikh",fullName:"Muhammad Saad Shaikh",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Jinnah Sindh Medical University",country:{name:"Pakistan"}}},{id:"315775",title:"Dr.",name:"Feng",middleName:null,surname:"Luo",slug:"feng-luo",fullName:"Feng Luo",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Sichuan University",country:{name:"China"}}},{id:"344229",title:"Dr.",name:"Sankeshan",middleName:null,surname:"Padayachee",slug:"sankeshan-padayachee",fullName:"Sankeshan Padayachee",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"315727",title:"Ms.",name:"Kelebogile A.",middleName:null,surname:"Mothupi",slug:"kelebogile-a.-mothupi",fullName:"Kelebogile A. Mothupi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"423519",title:"Dr.",name:"Sizakele",middleName:null,surname:"Ngwenya",slug:"sizakele-ngwenya",fullName:"Sizakele Ngwenya",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"337613",title:"Mrs.",name:"Tshakane",middleName:null,surname:"R.M.D. Ralephenya",slug:"tshakane-r.m.d.-ralephenya",fullName:"Tshakane R.M.D. Ralephenya",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"419270",title:"Dr.",name:"Ann",middleName:null,surname:"Chianchitlert",slug:"ann-chianchitlert",fullName:"Ann Chianchitlert",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Walailak University",country:{name:"Thailand"}}},{id:"419271",title:"Dr.",name:"Diane",middleName:null,surname:"Selvido",slug:"diane-selvido",fullName:"Diane Selvido",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Walailak University",country:{name:"Thailand"}}},{id:"419272",title:"Dr.",name:"Irin",middleName:null,surname:"Sirisoontorn",slug:"irin-sirisoontorn",fullName:"Irin Sirisoontorn",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Walailak University",country:{name:"Thailand"}}}]}},subseries:{item:{id:"2",type:"subseries",title:"Prosthodontics and Implant Dentistry",keywords:"Osseointegration, Hard Tissue, Peri-implant Soft Tissue, Restorative Materials, Prosthesis Design, Prosthesis, Patient Satisfaction, Rehabilitation",scope:"
\r\n\tThe success of dental implant treatment is not solely dependent on the osseointegration around the implant. Aside from the criteria used to describe the hard tissue response at the implant level, the success criteria in implant dentistry include three additional aspects: peri-implant soft tissue, prosthesis, and patient’s satisfaction.
\r\n
\r\n\tThe Prosthodontics and Implant Dentistry topic will provide readers with up-to-date resources on the prosthodontics factors such as aesthetics, restorative materials, the design of prosthesis, case selection, occlusion, oral rehabilitation, among others, all of which play an important role in determining the success of a well osseointegrated implant. With the help of digital dental technology, these can now be accomplished more predictably.
\r\n
\r\n\tThe end goal of prosthesis is always considered when planning successful implant placement. The readers in this field will be able to learn more about taking a holistic approach when treating their dental implant cases.
",coverUrl:"https://cdn.intechopen.com/series_topics/covers/2.jpg",hasOnlineFirst:!0,hasPublishedBooks:!0,annualVolume:11398,editor:{id:"179568",title:"Associate Prof.",name:"Wen Lin",middleName:null,surname:"Chai",slug:"wen-lin-chai",fullName:"Wen Lin Chai",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRHGAQA4/Profile_Picture_2022-05-23T14:31:12.png",biography:"Professor Dr. Chai Wen Lin is currently a lecturer at the Department of Restorative Dentistry, Faculty of Dentistry of the University of Malaya. She obtained a Master of Dental Science in 2006 and a Ph.D. in 2011. Her Ph.D. research work on the soft tissue-implant interface at the University of Sheffield has yielded several important publications in the key implant journals. She was awarded an Excellent Exchange Award by the University of Sheffield which gave her the opportunity to work at the famous Faculty of Dentistry of the University of Gothenburg, Sweden, under the tutelage of Prof. Peter Thomsen. In 2016, she was appointed as a visiting scholar at UCLA, USA, with attachment in Hospital Dentistry, and involvement in research work related to zirconia implant. In 2016, her contribution to dentistry was recognized by the Royal College of Surgeon of Edinburgh with her being awarded a Fellowship in Dental Surgery. She has authored numerous papers published both in local and international journals. She was the Editor of the Malaysian Dental Journal for several years. Her main research interests are implant-soft tissue interface, zirconia implant, photofunctionalization, 3D-oral mucosal model and pulpal regeneration.",institutionString:null,institution:{name:"University of Malaya",institutionURL:null,country:{name:"Malaysia"}}},editorTwo:{id:"479686",title:"Dr.",name:"Ghee Seong",middleName:null,surname:"Lim",slug:"ghee-seong-lim",fullName:"Ghee Seong Lim",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y00003ScjLZQAZ/Profile_Picture_2022-06-08T14:17:06.png",biography:"Assoc. Prof Dr. Lim Ghee Seong graduated with a Bachelor of Dental Surgery from University of Malaya, Kuala Lumpur in 2008. He then pursued his Master in Clinical Dentistry, specializing in Restorative Dentistry at Newcastle University, Newcastle, UK, where he graduated with distinction. He has also been awarded the International Training Fellowship (Restorative Dentistry) from the Royal College of Surgeons. His passion for teaching then led him to join the faculty of dentistry at University Malaya and he has since became a valuable lecturer and clinical specialist in the Department of Restorative Dentistry. He is currently the removable prosthodontic undergraduate year 3 coordinator, head of the undergraduate module on occlusion and a member of the multidisciplinary team for the TMD clinic. He has previous membership in the British Society for Restorative Dentistry, the Malaysian Association of Aesthetic Dentistry and he is currently a lifetime member of the Malaysian Association for Prosthodontics. Currently, he is also the examiner for the Restorative Specialty Membership Examinations, Royal College of Surgeons, England. He has authored and co-authored handful of both local and international journal articles. His main interest is in prosthodontics, dental material, TMD and regenerative dentistry.",institutionString:null,institution:{name:"University of Malaya",institutionURL:null,country:{name:"Malaysia"}}},editorThree:null,series:{id:"3",title:"Dentistry",doi:"10.5772/intechopen.71199",issn:"2631-6218"},editorialBoard:null},onlineFirstChapters:{paginationCount:25,paginationItems:[{id:"82654",title:"Atraumatic Restorative Treatment: More than a Minimally Invasive Approach?",doi:"10.5772/intechopen.105623",signatures:"Manal A. 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Finally, the tissue engineering subcategory will support topics such as the fundamentals of stem cells and progenitor cells and their proliferation, differentiation, bioreactors for three-dimensional culture and studies of phenotypic changes, stem and progenitor cells, both short and long term, ex vivo and in vivo implantation both in preclinical models and also in clinical trials.",annualVolume:11405,isOpenForSubmission:!0,coverUrl:"https://cdn.intechopen.com/series_topics/covers/9.jpg",editor:{id:"126286",title:"Dr.",name:"Luis",middleName:"Jesús",surname:"Villarreal-Gómez",fullName:"Luis Villarreal-Gómez",profilePictureURL:"https://mts.intechopen.com/storage/users/126286/images/system/126286.jpg",institutionString:null,institution:{name:"Autonomous University of Baja California",institutionURL:null,country:{name:"Mexico"}}},editorTwo:null,editorThree:null,editorialBoard:[{id:"35539",title:"Dr.",name:"Cecilia",middleName:null,surname:"Cristea",fullName:"Cecilia Cristea",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002aYQ65QAG/Profile_Picture_1621007741527",institutionString:null,institution:{name:"Iuliu Hațieganu University of Medicine and Pharmacy",institutionURL:null,country:{name:"Romania"}}},{id:"40735",title:"Dr.",name:"Gil",middleName:"Alberto Batista",surname:"Gonçalves",fullName:"Gil Gonçalves",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002aYRLGQA4/Profile_Picture_1628492612759",institutionString:null,institution:{name:"University of Aveiro",institutionURL:null,country:{name:"Portugal"}}},{id:"211725",title:"Associate Prof.",name:"Johann F.",middleName:null,surname:"Osma",fullName:"Johann F. 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