Yahya Meziani

University of Salamanca Spain

Yahya Moubarak Meziani received his Ph.D. in 2001 from Montpellier 2 University, France. He worked there as a research assistant and teaching assistant from 2001 to 2005. He was a Japan Society for the Promotion of Science (JSPS) post-doc fellow in 2005–2006 and an assistant professor for the Research Institute of Electrical Communication, Tohoku University, Japan, in 2006–2008. In 2008, he was awarded the Spanish Ramón y Cajal tenure track at Salamanca University, Spain. Since 2013, he has been an associate professor at Salamanca University. He has authored more than 70 papers and 3 book chapters and participated in more than 100 international conferences. He is co-editor of the journal Electronics and was granted 30 competitive projects as IP and a member of the investigation team. His interests include terahertz technology, imaging and inspection, sensors, field effect transistors, and plasmonic rectification.

1books edited

2chapters authored

Latest work with IntechOpen by Yahya Meziani

Terahertz (THz) science deals with the physics, technology, and application of the last unexplored region of the electromagnetic spectrum. The THz region (located between 0.1 and 10 THz) fosters a vast range of sensing for applications in different fields, such as astronomy, non-destructive characterization of materials, communications, defense and security, medicine, and more. This book contributes to three of the main research areas of THz science: THz time-domain spectroscopy, which is the backbone of materials analysis using THz radiation, the use of new 2D materials to develop future THz technology, and the interaction between THz radiation and biology. The contributors to this book are recognized specialists in the THz field.

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Trends in Terahertz Technology

Edited by Yahya Meziani

Chapters authored

Detection of Terahertz Radiation from Submicron Plasma Waves Transistors

By Y. M. Meziani, E. Garcia, J. Calvo, E. Diez, E. Velazquez, K. Fobelets and W. Knap

Part of the book: Bolometers

Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs

By Juan Antonio Delgado-Notario, Vito Clericò, Kristel Fobelets, Jesús Enrique Velázquez-Pérez and Yahya Moubarak Meziani

This chapter reports on an experimental and theoretical study of Schottky-gated strained-Si modulation-doped field-effect transistors (MODFETs) with different sub-micron gate lengths (100, 250, and 500 nm). Room-temperature detection of terahertz (THz) radiation by the strained-Si MODFETs was performed at two frequencies (0.15 and 0.3 THz). A technology computer-aided design (TCAD) analysis based on a two-dimensional hydrodynamic model (HDM) was used to investigate the transistor response to THz radiation excitation. TCAD simulation was validated through comparison with DC and low-frequency AC measurements. It was found that the photoresponse of the transistors can be improved by applying a constant drain-to-source bias. This enhancement was observed both theoretically and experimentally. The HDM model satisfactorily describes the experimental dependence of the photoresponse on the excitation frequency, the gate bias, and the drain-to-source current bias. The coupling of the incoming THz radiation to the MODFETs was studied at 0.15 and 0.3 THz. Finally, to demonstrate the suitability of strained-Si MODFET for terahertz applications, an image sensor within a pixel-by-pixel terahertz imaging system for the inspection of hidden objects was used.

Part of the book: Design, Simulation and Construction of Field Effect Transistors

Yahya Meziani

Latest work with IntechOpen by Yahya Meziani

Trends in Terahertz Technology

Chapters authored

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