Symbol | Unit | Description | ||

1 | Engineering strain component | |||

1 | Component of the strain tensor | |||

GPa | Component of the stress tensor | |||

GPa | Component of the elastic stiffness tensor | |||

GPa | Component of the contracted stiffness tensor | |||

GPa | Component of the elastic compliance tensor | |||

GPa | Component of the contracted compliance tensor | |||

eV | Electron affinity of the semiconductor | |||

ms | Electron diffusion coefficient | |||

ms | Hole diffusion coefficient | |||

Vm | Electric field | |||

eV | Energy | |||

eV | Conduction band edge energy | |||

eV | Valence band edge energy | |||

eV | Band gap energy | |||

V | Potential | |||

eV | Work function difference between metal and semiconductor | |||

meV | Density of states | |||

eV | Phonon energy | |||

Am | Electron current density | |||

Am | Hole current density | |||

m | Wave number | |||

m | Wave number vector | |||

1 | Relative dielectric permittivity | |||

1 | Relative magnetic permeability | |||

mVs | Electron mobility | |||

mVs | Hole mobility | |||

mVs | Effective electron mobility | |||

kg | Mass | |||

kg | Carrier effective mass in the semiconductor |

Symbol | Unit | Description | ||

m | Electron concentration | |||

m | Intrinsic concentration | |||

m | Concentration of donors | |||

m | Concentration of acceptors | |||

m | Effective density of states of the conduction band | |||

m | Effective density of states of the valence band | |||

m | Hole concentration | |||

s | Time | |||

s | Momentum relaxation time | |||

K | Temperature | |||

ms | Velocity | |||

ms | Velocity vector | |||

V | Gate-source voltage | |||

V | Drain-source voltage |

S. Dhar: Analytical Mobility Modeling for Strained Silicon-Based Devices