Abstract
Optical systems and microwave photonics applications rely heavily on high-performance photodetectors having a high bandwidth-efficiency product. The main types of photodetector structures include Schottky and PIN-photodiodes, heterojunction phototransistors, avalanche photodetectors, and metal-semiconductor-metal photodetectors. Vertically-illuminated photodetectors intrinsically present bandwidth-efficiency limitations, but these have been mitigated by new innovations over the years in quantum well photodetectors, edge-coupled photodetectors and resonant-cavity enhanced photodetectors for improved photophysical characteristics. Edge-coupled ultra-high-speed photodetectors have yielded high conversion efficiencies, and the active device structure of resonant-cavity-enhanced photodetectors allows wavelength selectivity and optical field enhancement due to resonance, enabling photodetectors to be made thinner and hence faster, while simultaneously increasing the quantum efficiency at the resonant wavelengths. Single-photon avalanche diodes have been developed, which combine an ultimate sensitivity with excellent timing accuracy. Further advances in addressing the bandwidth-quantum efficiency trade-off have incorporated photon-trapping nanostructures and plasmonic nanoparticles. Nanowire photodetectors have also demonstrated the highest photophysical performance to date.
Keywords
- bandwidth-efficiency product
- saturation current
- quantum efficiency
- photosensitivity
- optical absorption
- drift layers
1. Introduction
High-performance photodetectors (PDs) are key components in optical systems and microwave photonics applications. Examples include radio telescope arrays, optical fiber communication systems and optically controlled phased array radar. Over the past several decades, the design principles of PDs and their technologies have become well developed, as various structures and fabrication/processing strategies have been established. Overall, the main types of PDs include
2. Vertically-illuminated photodetectors (VPDs)
The VPD comprises either the
Due to broad and significant military and civilian applications, research on infrared detection and infrared photodetectors has intensified. In past decades, work on developing the operating temperature and spectral sensitivity capabilities of infrared photodetectors have become significant with the rapid development of photoelectric materials, for example, mercury cadmium telluride (HgCdTe) ternary alloys. Since the first synthesis of HgCdTe materials [14], HgCdTe infrared detectors with variable wavelength response have been manufactured by varying the alloy composition [15]. The amount of cadmium in the alloy can be selected in order to tune the bandgap which in turn determines the optical absorption of the material in the desired infrared range spanning the shortwave infrared to the very long wave infrared. As reported in [16, 17], HgCdTe infrared detectors with low frequency noise and high R0A product in the long wavelength spectral region were demonstrated at liquid nitrogen temperatures. As a result of large optical coefficients, more than 70% quantum efficiency has been achieved in HgCdTe infrared photodetectors [18].
Although HgCdTe is considered as an ideal material providing high degrees of freedom in infrared detector design, the difficulty in the fabrication and integration of such narrow bandgap materials (0–1.5 eV) is one practical limitation toward developing large-scale array applications [15]. Alternatively, photodetectors employing quantum wells in wide bandgap semiconductors (e.g., III-nitrides) were studied, such as, the so-called quantum well infrared photodetectors (QWIPs). Taking advantage of the artificial quantum well structure, the photocurrent is derived from optical absorption due to intersubband transitions involving many interacting and quantum-confined electrons. Based on previous theoretical and experimental investigations [19, 20, 21, 22], Levine et al. [23] demonstrated the first QWIP, achieving a high peak responsivity at a wavelength of 10.8 μm. Thereafter, QWIPs were extensively explored [24, 25, 26, 27, 28] and related applications were developed [29, 30, 31].
However,
3. Edge-coupled photodetectors
Although various structures have been proposed and experimentally characterized, the bandwidth-efficiency product of conventional VPDs are limited due to the trade-off between quantum efficiency and bandwidth, which imposes a limit on the speed and sensitivity for photonic applications. For VPDs, increasing the thickness of the PD absorption layer offers the advantages of high quantum efficiency but suffers from a narrow bandwidth. Fortunately, the edge-coupled WGPD has been widely investigated as a promising approach to overcome the bandwidth-efficiency trade-off found in the VPD. The structure of the WGPD permits the bandwidth and efficiency to be specified almost independently because the quantum efficiency is determined by the waveguide length instead of the absorption layer thickness. However, the optical waveguide structure of the WGPD results in a low optical coupling efficiency [38], which is mainly caused by the mode mismatch between waveguide and optical fiber. In practice, efficient coupling is usually enhanced by a mode field converter [39]. Accordingly, depending on the structural configuration, WGPDs can be divided into mushroom-WGPDs and TWPDs.
As reported in [40], a bandwidth of 28 GHz and an efficiency of 25% have been achieved by the first ever high-speed edge-coupled WGPD. In 1991, WGPDs with double-core multimode waveguide structures were proposed to address the coupling problem [41, 42]. The calculated coupling efficiency of the WGPD having such a structure can exceed 80% [43], which is regarded as a breakthrough in WGPDs for practical applications. By combining the structures of the waveguide and photodiode, the waveguide-fed photodiode (WG-fed-PD) is another design innovation to boost the coupling efficiency of the edge-coupled WGPD. Besides, the WG-fed-PD is ideal for implementation in optoelectronic integrated circuits. Previously, 70-GHz and 100-GHz photodetectors based on WG-fed-PD have been reported in [44, 45], respectively. Since WGPDs are categorically lumped devices, their bandwidths are limited by the RC time introduced by the parasitic capacitances and resistances. Kato et al proposed a new structure, which is the so-called the mushroom-WGPD having cladding layers that are wider than the core layer [46]. In such a structure, the capacitance as well as contact resistance can be reduced to obtain a larger bandwidth. In [47], a mushroom-WGPD with a bandwidth-efficiency product of 55 GHz was demonstrated. Furthermore, the distributed-element TWPD was proposed to overcome the RC bandwidth limitation of the WGPD. Although the structures of TWPD and WGPD are similar, the electrical properties of these two photodetectors are essentially different. Therefore, the TWPD bandwidth is mainly limited by the mismatch of the optical wave and microwave propagation velocities rather than the RC time delay.
As early as 1990, the design concept of the TWPD was reported by Taylor et al. [48], and a velocity-matched
4. Resonant-cavity-enhanced photodetectors
As stated earlier, it is possible to mitigate the limited bandwidth-efficiency product in VPDs by means of increasing the length of the optical paths while retaining the thickness of the absorption layer. Thus, the resonant-cavity-enhanced photodetector (RCE-PD) was put forth as an alternative method to solve the trade-off conundrum between efficiency and bandwidth. Since the 1990s, a family of RCE-PDs was proposed, in which the photophysical performance was enhanced by placing the VPD within a Fabry-Perot resonator [55]. Since the photodiode elements incorporated inside the resonator are conventional VPDs, it should be noted that the electrical parameters of the RCE-PD, such as, the bandwidth, and dark and saturation currents, will not be enhanced. Based on microring resonators, Abaeiani et al. presented a new structure called the RCE-WGPD or microring PD (MRPD) [56], taking advantage of both the RCE-PDs and WGPDs. With such a structure, selective wavelength detection as well as a high efficiency-bandwidth product can be achieved. Without the mirrors used in traditional RCE-PDs, the MRPDs are suitable for planar lightwave circuit integration. Various photo-sensitive devices based on MRPDs were reported in [57, 58, 59]. Moreover, the RCE-PDs based on grating were also presented in [60, 61, 62]. Due to the advantage of ultimate sensitivity combined with excellent timing accuracy, single-photon detectors, especially the single-photon avalanche diodes (SPADs), are important [63, 64]. As reported in [65, 66], the first RCE-SPAD was fabricated on a reflecting silicon-on-insulator (SOI) substrate.
5. Micro/nanostructured photodetectors
By adopting micro/nanostructures, photon-material interactions can be enhanced to address the trade-off between speed (bandwidth) and efficiency [67, 68]. The low-dimensional structures are able to control light for further interaction with the absorbing materials, excite the lateral propagation mode, and reduce surface reflection. Recently, silicon SPADs incorporating photon-trapping nanostructures were demonstrated [69]. Through diffraction of the vertically incident photons into the horizontal waveguide mode, the photons are trapped in the inverted pyramidal thin-film, and the absorption length is significantly increased to enhance the photon detection efficiency while retaining a low timing jitter. Similarly, a photon-trapping photodiode with micron- and nanoscale holes has demonstrated high-speed/high-efficiency performance [70], achieving an ultrafast impulse response of 30 ps FWHM (full-width at half-maximum), and a high efficiency of more than 50%. Another alternative technology being exploited to realize light-trapping in thin-film PDs is plasmonic nanostructures [71, 72, 73, 74]. Unlike the photon-trapping mechanism enabled by micro/nanoholes, the metallic nanoparticles in plasmonic nanostructures act as sub-wavelength scattering centers, which allow coupling of the incident light into the semiconductor.
With the development of advanced nanofabrication technologies, photodetectors with integrated nanowires, i.e., nanowire PDs, have been realized and studied extensively [75, 76, 77, 78, 79]. In particular, several demonstrations of high-speed nanowire PDs were reported. In [80], a photoconductor with intersecting InP nanowires was demonstrated to obtain a pulse response of 14 ps FWHM at 780-nm wavelength irradiation. Compared with using bare core nanowires, higher response was achieved in MSM PDs using Schottky-contacted GaAs/AlGaAs core/shell nanowires [81]. In [82], nanopillar-based APDs have exhibited a 200-GHz gain bandwidth product at 1060-nm illumination.
6. Conclusion
This chapter introduces the main types of PD structures including the Schottky and PIN PDs, APDs, MSM PDs, and heterojunction phototransistors. Vertically-illuminated PDs have inherently low bandwidth-efficiency products but have been mitigated by new innovations in QWIP, edge-coupled, RCE and nanostructure, designs. Since the 1990s, RCE and WG PDs have been explored to address the bandwidth-quantum efficiency trade-off. RCE-SPADs have been recently developed for the ultimate in sensitivity while maintaining a low timing jitter. CMOS- and lithography-compatible processes have been adopted in the design of SOI-based SPADs. Photons can be diffracted, guided and absorbed in different pixels, especially for tightly-patterned silicon photomultipliers. Nanostructured materials and nanoplasmonics have been exploited for enhanced photon trapping, coupling and absorption in MSM PDs and APDs, for the highest bandwidth-efficiency product.
References
- 1.
Effenberger F, Joshi A. Ultrafast, dual-depletion region, InGaAsIlnP p -i -n detector. Journal of Lightwave Technology. 1996;14 (8):1859-1864 - 2.
Pereira JT, Torres JPN. Frequency response optimization of dual depletion InGaAs/InP PIN photodiodes. Photonic Sensors. 2016; 6 (1):63-70 - 3.
Shimizu N, Watanabe N, Furuta T, Ishibashi T. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz. IEEE Photonics Technology Letters. 1998; 10 (3):412-414 - 4.
Ito H, Furuta T, Kodama S, Watanabe N, Ishibashi T. InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth. Electronics Letters. 1999; 35 (18):1556-1557 - 5.
Ishibashi T, Muramoto Y, Yoshimatsu T, Ito H. Unitraveling-carrier photodiodes for terahertz applications. IEEE Journal of Selected Topics in Quantum Electronics. 2014; 20 (6):79-88 - 6.
Campbell JC, Tsang WT, Qua GJ, Bowers JE. InP/InGaAsP/InGaAs avalanche photodiodes with 70-GHz gainbandwidth product. Applied Physics Letters. 1987; 51 (18):1454-1456 - 7.
Lahrichi M, Glastre G, Derouin E, et al. 240-GHz gain-bandwidth product back-side illuminated AlInAs avalanche photodiodes. IEEE Photonics Technology Letters. 2010; 22 (18):1373-1375 - 8.
Duan N, Liow TY, Lim AE, et al. 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection. Optics Express. 2012; 20 (10):11031 - 9.
Wu H, Wu W, Zhang H, Chen Y, Wu Z, Wang G, et al. All AlGaN epitaxial structure solar-blind avalanche photodiodes with high efficiency and high gain. Applied Physics Express. 2016; 9 (5):052103 - 10.
Williams KJ. Comparisons between dual-depletion-region and uni-travelling-carrier p -i -n photodetectors. IEE Proceedings-Optoelectronics. 2002;149 (4):131-137 - 11.
Soole JB, Schumacher H. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications. IEEE Journal of Quantum Electronics. 1991; 27 (3):737-752 - 12.
Colace L, Masini G, Galluzzi F, Assanto G, Capellini G, Di Gaspare L, et al. Metal-semiconductor-metal near-infrared light detector based on epitaxial Ge/Si. Applied Physics Letters. 1998; 72 (24):3175-3177 - 13.
Ciftcioglu B, Zhang J, Sobolewski R, Wu H. An 850-nm normal-incidence germanium metal-semiconductor-metal photodetector with 13-GHz bandwidth and 8-μA dark current. IEEE Photonics Technology Letters. 2010; 22 (24):1850-1852 - 14.
Lawson WD, Nielsen S, Putley EH, Young AS. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe. Journal of Physics and Chemistry of Solids. 1959; 9 (3-4):325-329 - 15.
Rogalski A. HgCdTe infrared detector material: History, status and outlook. Reports on Progress in Physics. 2005; 68 (10):2267 - 16.
Arias JM, Pasko JG, Zandian M, Shin SH, Williams GM, Bubulac LO, et al. MBE HgCdTe heterostructure p-on-n planar infrared photodiodes. Journal of Electronic Materials. 1993; 22 (8):1049-1053 - 17.
Destefanis G, Chamonal JP. Large improvement in HgCdTe photovoltaic detector performances at LETI. Journal of Electronic Materials. 1993; 22 (8):1027-1032 - 18.
Smith EPG, Pham LT, Venzor GM, Norton EM, Newton MD, Goetz PM, et al. HgCdTe focal plane arrays for dual-color mid-and long-wavelength infrared detection. Journal of Electronic Materials. 2004; 33 (6):509-516 - 19.
Smith JS, Chiu LC, Margalit S, Yariv A, Cho AY. A new infrared detector using electron emission from multiple quantum wells. Journal of Vacuum Science & Technology, B: Microelectronics Processing and Phenomena. 1983; 1 (2):376-378 - 20.
Esaki L, Sakaki H. New photoconductor. IBM Technical Disclosure Bulletin. 1977; 20 :2456-2457 - 21.
Chiu LC, Smith JS, Margalit S, Yariv A, Cho AY. Application of internal photoemission from quantum-well and heterojunction superlattices to infrared photodetectors. Infrared Physics. 1983; 23 (2):93-97 - 22.
Coon DD, Karunasiri RPG. New mode of IR detection using quantum wells. Applied Physics Letters. 1984; 45 (6):649-651 - 23.
Levine BF, Choi KK, Bethea CG, Walker J, Malik RJ. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices. Applied Physics Letters. 1987; 50 (16):1092-1094 - 24.
Levine BF. Quantum-well infrared photodetectors. Journal of Applied Physics. 1993; 74 (8):R1-R81 - 25.
Henini M. QWIPs enhance infrared detection. III-Vs Review. 1998; 11 (3):30-34 - 26.
Beeler M, Trichas E, Monroy E. III-nitride semiconductors for intersubband optoelectronics: A review. Semiconductor Science and Technology. 2013; 28 (7):074022 - 27.
Liu HC, Capasso F, editors. Intersubband Transitions in Quantum Wells: Physics and Device Applications I and II. San Diego, CA: Academic; 2000 - 28.
Odoh EO, Njapba AS. A review of semiconductor quantum well devices. Advances in Physics Theories and Applications. 2015; 46 :26-32 - 29.
Gunapala SD, Bandara SV, Liu JK, Hill CJ, Rafol SB, Mumolo JM, et al. 1024×1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications. Semiconductor Science and Technology. 2005; 20 (5):473 - 30.
Gunapala SD, Bandara SV, Liu JK, Luong EM, Stetson N, Shott CA, et al. Long-wavelength 256/spl times/256 GaAs/AlGaAs quantum well infrared photodetector (QWIP) palm-size camera. IEEE Transactions on Electron Devices. 2000; 47 (2):326-332 - 31.
Dhingra M, Shankar A, Tiwari BB. A review on quantum well structures in photonic devices for enhanced speed and span of the transmission network. Indian Journal of Physics. 2010; 84 (8):1031-1037 - 32.
Andersson JY, Lundqvist L, Paska ZF. Quantum efficiency enhancement of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a grating coupler. Applied Physics Letters. 1991; 58 (20):2264-2266 - 33.
Sarusi G, Levine BF, Pearton SJ, Bandara KMS, Leibenguth RE, Andersson JY. Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors. Journal of Applied Physics. 1994; 76 (9):4989-4994 - 34.
Choi KK, Lin CH, Leung KM, Tamir T, Mao J, Tsui DC, et al. Broadband and narrow band light coupling for QWIPs. Infrared Physics & Technology. 2003; 44 (5-6):309-324 - 35.
Levine BF, Gunapala SD, Kuo JM, Pei SS, Hui S. Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors. Applied Physics Letters. 1991; 59 (15):1864-1866 - 36.
Gunapala SD, Bandara SV, Liu JK, Rafol SB, Mumolo JM, Shott CA, et al. 640 × 512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays. Infrared Physics & Technology. 2003; 44 (5-6):411-425 - 37.
Gunapala SD, Bandara SV, Liu JK, Rafol SB, Mutnolo JM. 640/spl times/512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays. IEEE Transactions on Electron Devices. 2003; 50 (12):2353-2360 - 38.
Kato K. Ultrawide-band/high-frequency photodetectors. IEEE Transactions on Microwave Theory and Techniques. 1999; 47 (7):1265-1281 - 39.
Umbach A, Trommer D, Steingrüber R, Seeger A, Ebert W, Unterbörsch G. High-speed, high-power 1.55 μm photodetectors. Optical and Quantum Electronics. 2001; 33 (7-10):1101-1112 - 40.
Bowers JE, Burrus CA. High-speed zero-bias waveguide photodetectors. Electronics Letters. 1986; 22 :905-906 - 41.
Kato K, Hata S, Kozen A, Yoshida J. High-efficiency waveguide InGaAs p -i -n photodiode with bandwidth of greater than 40 GHz. In: OFC’91, 1991 - 42.
Wake D, Spooner TP, Perrin SD, Henning ID. 50 GHz InGaAs edge-coupled pin photodetector. Electronics Letters. 1991; 27 :1073-1075 - 43.
Wanlin G, Giraudet L, Praseuth JP, Miras A, Legros E. High responsivity side illuminated AlGaInAs pin photodiode for 40 Gbit/s-40 GHz applications. In: ECOC’97. Vol. 2. 1997. pp. 37-40 - 44.
Unterborsch G, Umbach A, Trommer D, Mekonnen GG. 70 GHz long-wavelength photodetector. In: 11th International Conference on Integrated Optics and Optical Fibre Communications,, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448). Vol. 2; IET. 1997. pp. 25-28 - 45.
Bach HG, Beling A, Mekonnen GG, Kunkel R, Schmidt D, Ebert W, et al. InP-based waveguide-integrated photodetector with 100-GHz bandwidth. IEEE Journal of Selected Topics in Quantum Electronics. 2004; 10 (4):668-672 - 46.
Kato K, Yoshida J. Ultrawide-bandwidth 1.55-m waveguide p -i -n photodiode. Proceedings of SPIE-The International Society for Optical Engineering. 1994;2149 :312-319 - 47.
Kato K, Kozen A, Muramoto Y, Itaya Y, Nagatsuma T, Yaita M. 110-GHz, 50% efficiency mushroom-mesa waveguide p -i -n photodiode for a 1.55-mm wavelength. IEEE Photonics Technology Letters. 1994;6 :719-721 - 48.
Taylor HF, Eknoyan O, Park CS, Choi KN, Chang K. Traveling wave photodetectors. Proceedings of SPIE-The International Society for Optical Engineering. 1990; 1217 :59-63 - 49.
Heitala VM, Vawter GA. A large-bandwidth high-quantum-efficiency traveling-wave photodetector based on a slow-wave coplanar transmission line. In: Prog. Electromagnetics Res. Symp.; July 1991; Cambridge, MA - 50.
Giboney K, Nagarajan R, Reynolds T, Allen S, Mirin R, Rodwell M, Bowers J. 172 GHz, 42% quantum efficiency p -i -n travelling-wave photodetector. In: 52nd Annu. Device Res. Conf.; June 1194; Boulder, CO. Vol. VIA-9 - 51.
Giboney KS, Rodwell JW, Bowers JE. Traveling-wave photodetector theory. IEEE Transactions on Microwave Theory and Techniques. 1997; 45 (8):1310-1319 - 52.
Shi JW, Gan KG, Chiu YJ, Chen YH, Sun CK, Yang YJ, et al. Metal-semiconductor-metal traveling-wave photodetectors. IEEE Photonics Technology Letters. 2001; 13 (6):623-625 - 53.
Lin LY, Wu MC, Itoh T, Vang TA, Muller RE, Sivco DL, et al. High-power high-speed photodetectors design, analysis, and experimental demonstration. IEEE Transactions on Microwave Theory and Techniques. 1997; 45 :1320-1331 - 54.
Giboney KS, Nagarajan RL, Reynolds TE, Allen ST, Mirin RP, Rodwell MJ, et al. Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency product. IEEE Photonics Technology Letters. 1995; 7 (4):412-414 - 55.
Ünlü MS, Strite S. Resonant cavity enhanced photonic devices. Journal of Applied Physics. 1995; 78 (2):607-639 - 56.
Abaeiani G, Ahmadi V, Saghafi K. Design and analysis of resonant cavity enhanced-waveguide photodetectors for microwave photonics applications. IEEE Photonics Technology Letters. 2006; 18 (15):1597-1599 - 57.
Cho SY, Jokerst NM. Integrated thin film photodetectors with vertically coupled microring resonators for chip scale spectral analysis. Applied Physics Letters. 2007; 90 (10):101105 - 58.
Chen L, Lipson M. Ultra-low capacitance and high speed germanium photodetectors on silicon. Optics Express. 2009; 17 (10):7901-7906 - 59.
Ackert JJ, Fiorentino M, Logan DF, Beausoleil R, Jessop PE, Knights AP. Silicon-on-insulator microring resonator defect-based photodetector with 3.5-GHz bandwidth. Journal of Nanophotonics. 2011; 5 (1):059507 - 60.
Zohar M, Auslender M, Hava S, Faraone L. Resonance cavity enhanced midinfrared photodetectors employing subwavelength grating. In: 11th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD); September 2011; IEEE; 2011. pp. 25-26 - 61.
Duan X, Huang Y, Ren X, Shang Y, Fan X, Hu F. High-efficiency InGaAs/InP photodetector incorporating SOI-based concentric circular subwavelength gratings. IEEE Photonics Technology Letters. 2012; 24 (10):863-865 - 62.
Lai KW, Lee YS, Fu YJ, Lin SD. Selecting detection wavelength of resonant cavity-enhanced photodetectors by guided-mode resonance reflectors. Optics Express. 2012; 20 (4):3572-3579 - 63.
Ghioni M, Gulinatti A, Rech I, Zappa F, Cova S. Progress in silicon single-photon avalanche diodes. IEEE Journal of Selected Topics in Quantum Electronics. 2007; 13 (4):852-862 - 64.
Itzler MA, Jiang X, Entwistle M, Slomkowski K, Tosi A, Acerbi F, et al. Advances in InGaAsP-based avalanche diode single photon detectors. Journal of Modern Optics. 2011; 58 (3-4):174-200 - 65.
Ghioni M, Armellini G, Maccagnani P, Rech I, Emsley MK, Unlu MS. Resonant-cavity-enhanced single-photon avalanche diodes on reflecting silicon substrates. IEEE Photonics Technology Letters. 2008; 20 (6):413-415 - 66.
Ghioni M, Armellini G, Maccagnani P, Rech I, Emsley MK, Ünlü MS. Resonant-cavity-enhanced single photon avalanche diodes on double silicon-on-insulator substrates. Journal of Modern Optics. 2009; 56 (2-3):309-316 - 67.
Cansizoglu H, Devine EP, Gao Y, Ghandiparsi S, Yamada T, Elrefaie AF, et al. A new paradigm in high-speed and high-efficiency silicon photodiodes for communication—Part I: Enhancing photon-material interactions via low-dimensional structures. IEEE Transactions on Electron Devices. 2018; 65 (2):372-381 - 68.
Cansizoglu H, Elrefaie AF, Bartolo-Perez C, Yamada T, Gao Y, Mayet AS, et al. A new paradigm in high-speed and high-efficiency silicon photodiodes for communication—Part II: Device and VLSI integration challenges for low-dimensional structures. IEEE Transactions on Electron Devices. 2018; 65 (2):382-391 - 69.
Zang K, Jiang X, Huo Y, Ding X, Morea M, Chen X, et al. Silicon single-photon avalanche diodes with nano-structured light trapping. Nature Communications. 2017; 8 (1):628 - 70.
Gao Y, Cansizoglu H, Polat KG, Ghandiparsi S, Kaya A, Mamtaz HH, et al. Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes. Nature Photonics. 2017; 11 (5):301 - 71.
Ishi T, Fujikata J, Makita K, Baba T, Ohashi K. Si nanophotodiode with a surface plasmon antenna. Japanese Journal of Applied Physics. 2005; 44 (3L):L364 - 72.
Goykhman I, Sassi U, Desiatov B, Mazurski N, Milana S, de Fazio D, et al. On-chip integrated, silicon-graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain. Nano Letters. 2016; 16 (5):3005-3013 - 73.
Levy U, Grajower M, Goncalves PAD, Mortensen NA, Khurgin JB. Plasmonic silicon Schottky photodetectors: The physics behind graphene enhanced internal photoemission. APL Photonics. 2017; 2 (2):026103 - 74.
Muehlbrandt S, Melikyan A, Harter T, Köhnle K, Muslija A, Vincze P, et al. Silicon-plasmonic internal-photoemission detector for 40 Gbit/s data reception. Optica. 2016; 3 (7):741-747 - 75.
Soci C, Zhang A, Bao XY, Kim H, Lo Y, Wang D. Nanowire photodetectors. Journal of Nanoscience and Nanotechnology. 2010; 10 (3):1430-1449 - 76.
Yan C, Lee PS. Recent progresses in improving nanowire photodetector performances. Science of Advanced Materials. 2012; 4 (2):241-253 - 77.
Logeeswaran VJ, Oh J, Nayak AP, Katzenmeyer AM, Gilchrist KH, Grego S, et al. A perspective on nanowire photodetectors: Current status, future challenges, and opportunities. IEEE Journal of Selected Topics in Quantum Electronics. 2011; 17 (4):1002-1032 - 78.
Zhai T, Fang X, Liao M, Xu X, Zeng H, Yoshio B, et al. A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors. Sensors. 2009; 9 (8):6504-6529 - 79.
LaPierre RR, Robson M, Azizur-Rahman KM, Kuyanov P. A review of III-V nanowire infrared photodetectors and sensors. Journal of Physics D: Applied Physics. 2017; 50 (12):123001 - 80.
Logeeswaran VJ, Sarkar A, Islam MS, Kobayashi NP, Straznicky J, Li X, et al. A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface. Applied Physics A. 2008; 91 (1):1-5 - 81.
Gallo EM, Chen G, Currie M, McGuckin T, Prete P, Lovergine N, et al. Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors. Applied Physics Letters. 2011; 98 (24):241113 - 82.
Farrell AC, Senanayake P, Hung CH, El-Howayek G, Rajagopal A, Currie M, et al. Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes. Scientific Reports. 2015; 5 :17580