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Creation of Ordered Layers on Semiconductor Surfaces: An ab Initio Molecular Dynamics Study of the SiC(001)-3×2 and SiC(100)-c(2×2) Surfaces

Written By

Yanli Zhang and Mark E. Tuckerman

Submitted: 23 December 2010 Published: 10 October 2011

DOI: 10.5772/25143

From the Edited Volume

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

Edited by Moumita Mukherjee

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Written By

Yanli Zhang and Mark E. Tuckerman

Submitted: 23 December 2010 Published: 10 October 2011