Open access peer-reviewed chapter

Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime

By Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Submitted: May 26th 2010Reviewed: September 24th 2010Published: April 4th 2011

DOI: 10.5772/14591

Downloaded: 1999

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Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida (April 4th 2011). Growth Rate Enhancement of Silicon-Carbide Oxidation in Thin Oxide Regime, Properties and Applications of Silicon Carbide, Rosario Gerhardt, IntechOpen, DOI: 10.5772/14591. Available from:

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