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Silicon Carbide Based Transit Time Devices: The New Frontier in High-power THz Electronics

Written By

Moumita Mukherjee

Submitted: June 10th, 2010 Published: April 4th, 2011

DOI: 10.5772/15537

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Written By

Moumita Mukherjee

Submitted: June 10th, 2010 Published: April 4th, 2011