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Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy

By Masashi Arita, Atsushi Tsurumaki-Fukuchi and Yasuo Takahashi

Submitted: December 5th 2016Reviewed: April 6th 2017Published: April 4th 2018

DOI: 10.5772/intechopen.69024

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Masashi Arita, Atsushi Tsurumaki-Fukuchi and Yasuo Takahashi (April 4th 2018). Nanoscale Switching and Degradation of Resistive Random Access Memory Studied by In Situ Electron Microscopy, Memristor and Memristive Neural Networks Alex Pappachen James, IntechOpen, DOI: 10.5772/intechopen.69024. Available from:

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