Chapters authored
HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors
Part of the book: Photodiodes
LWIR Photodiodes and Focal Plane Arrays Based on Novel HgCdTe/CdZnTe/GaAs Heterostructures Grown by MBE Technique
Part of the book: Photodiodes
Determination of the Bulk and Local Diffusion-Length Values of Charge Carriers in MCT Films and in the Absorber Layers of MCT-Based Photovoltaic IR FPA Detectors
In the present chapter, we describe two new photoelectric-measurement-based methods that can be used for characterization of the diffusion process of charge carriers either in mercury-cadmium-tellurium (MCT) films intended for fabrication of infrared focal plane array (IR FPA) detectors or in the absorber layers of ready MCT-based photovoltaic IR FPA detectors. First-type measurements are photocurrent measurements to be performed on special test structures involving round photodiodes provided with coaxial light-shielding cap metal contacts. Second-type measurements are spot-scan measurements of MCT photovoltaic 2D IR FPA detectors traditionally used for measuring the crosstalk value of such detectors yet implemented at low and high levels of registered diode photocurrents. Both methods permit the determination of the bulk diffusion length of minority charge carriers in MCT material. The second method, in addition, permits the determination of the local effective diffusion length of minority charge carriers in the absorber-layer region under FPA diodes. The values of the bulk diffusion length of minority carriers obtained in MCT films and in the MCT absorber material of the examined middle-wave and long-wave IR FPA detectors were found to be in good agreement with previously reported relevant data. The estimated value of the local effective diffusion length of minority carriers in the film region under back-biased FPA diodes proved to be consistent with a theoretical estimate of this length.
Part of the book: Optoelectronics