Nicolas Fourches
Dr. Fourches defended his Ph.D. Thesis in 1989 on Neutron-induced defects in High Purity Germanium. His Subsequent work includes working on SOI and radiation effects and contribution to front-end electronics for detectors, contributions to CMOS charged particle detectors, and numerical simulation of radiation effects. He also made a significant contribution to the experimental study of defects in semiconductor such as Ge., contribution to new pixel detectors, and Contribution to Ge cryogenic dark matter detectors.