From the past few decades, photodetectors (PDs) are being regarded as crucial components of many photonic devices which are being used in various important applications. However, the PDs based on the traditional bulk semiconductors still face a lot of challenges as far as the device performance is concerned. To overcome these limitations, a novel class of two-dimensional materials known as transition metal dichalcogenides (TMDCs) has shown great promise. The TMDCs-based PDs have been reported to exhibit competitive figures of merit to the state-of-the-art PDs, however, their production is still limited to laboratory scale due to limitations in the conventional fabrication methods. Compared to these traditional synthesis approaches, the technique of pulsed laser deposition (PLD) offers several merits. PLD is a physical vapor deposition approach, which is performed in an ultrahigh-vacuum environment. Therefore, the products are expected to be clean and free from contaminants. Most importantly, PLD enables actualization of large-area thin films, which can have a significant potential in the modern semiconductor industry. In the current chapter, the growth of TMDCs by PLD for applications in photodetection has been discussed, with a detailed analysis on the recent advancements in this area. The chapter will be concluded by providing an outlook and perspective on the strategies to overcome the shortcomings associated with the current devices.
Part of the book: Practical Applications of Laser Ablation
In the last few decades, there has been a phenomenal rise and evolution in the field of III–Nitride semiconductors for optoelectronic applications such as lasers, sensors and detectors. However, certain hurdles still remain in the path of designing high-performance photodetectors (PDs) based on III-Nitride semiconductors considering their device performance. Recently, a lot of progress has been achieved in devices based on the high quality epilayers grown by molecular beam epitaxy (MBE). Being an ultra-high vacuum environment based-technique, MBE has enabled the realization of high-quality and highly efficient PDs which have exhibited competitive figures of merit to that of the commercial PDs. Moreover, by combining the novel properties of 2D materials with MBE-grown III-Nitrides, devices with enhanced functionalities have been realized which would pave a way towards the next-generation photonics. In the current chapter, the basic concepts about photodetection have been presented in detail, followed by a discussion on the basic properties of the III-Nitride semiconductors, and the recent advancements in the field of MBE-grown III-Nitrides-based PDs, with an emphasis on their hybrid structures. Finally, an outlook has been provided highlighting the present shortcomings as well as the unresolved issues associated with the present-day devices in this emerging field of research.