Dielectric constants and electron conductivity effective mass of Si, 3C-, 4H- and 6H-SiC [32].
\r\n\tOver the years, the concept of maintenance became more comprehensive, reducing fault occurrence and increasing industrial system availability. Besides, reliability, safety, and criticality requirements were associated with the system or equipment under analysis. Maintenance strategies or schemes can be classified as corrective (run-to-break), preventive (time-based), and predictive (condition-based maintenance). Corrective maintenance is only performed after an occurrence of a fault. Therefore, it involves unexpected breakdowns, high costs, changes in the production chain, and it could lead to catastrophic events. Preventive maintenance and interventions occur based on a scheduled maintenance plan or the equipment's mean time between failures. Although it is more effective than corrective maintenance, unexpected failure may still occur by preventing most failures. Additionally, the process cost is still high, especially the costs associated with labor, inventory, and unnecessary replacement of equipment or components.
\r\n\tOn the other hand, predictive maintenance analyses the equipment condition so that a possible fault can still be identified at an early stage. Predictive maintenance aims to identify a machine anomaly so that it does not result in a fault. Such maintenance involves advanced monitoring, processing, and signal analysis techniques, which are generally performed non-invasively and, in many cases, in real-time. In the case of machines or processes, these techniques can be developed based on vibration, temperature, acoustic emission, or electrical current signal monitoring. It should be noted that monitoring such signals or parameters to verify the operating condition is called condition monitoring. Condition monitoring aims to observe the machine's current operational condition and predict its future condition, keeping it under a systematic analysis during its remaining life. In this sense, a fault condition can be detected and identified from systematic machine condition monitoring. A diagnosis procedure can be established, whereby properly investigating the fault symptoms and prognosis.
\r\n\t
\r\n\tThis book will aim to merge all these ideas in a single volume, aggregate new maintenance experiences, apply new techniques and approaches, and report field experiences to establish new maintenance processes and management paradigms.
\r\n\t
Silicon has dominated the electronics industry ever since it was born. In power electronics area, nearly all commercial power devices are made of Si nowadays. However, due to the target of a more environmental friendly society, there has been a continuously increasing demand of power devices working in more harsh conditions such as higher power, higher temperature, higher frequency or even higher radiation, some of which are well beyond the physical limits of Si. For the first time, the position of Si is challenged by some other materials, most of which have a larger band gap than Si, thus called wide band gap (WBG) semiconductors, including silicon carbide (SiC), gallium nitride (GaN) and diamond. SiC may be the most promising candidate at the moment, whose technology is most mature among WBG semiconductors with commercial devices readily on the market [1, 2], and most importantly, SiC is the only WBG semiconductor with SiO2 as the nature oxide, which is used extensively in power devices as insulators, dielectrics and diffusion barriers [3]. Just as the SiC substrate and epilayer growth technologies which had gone through decades of developments before power device quality level wafers can be delivered, SiC device processing techniques were improved as well at the same time. It has been studied intensively in last 20 years, and although there is still plenty of room to be improved, commercial power MOSFETs and Schottky diodes with some more conventional structures are not an issue anymore. This chapter will talk about the state-of-the-art processing techniques for SiC devices, including intentional doping, electrical activation, metal/semiconductor interfaces and MOS interface. Particularity, the difference between Si and SiC processing in these areas will be discussed.
\nIn 1930, Bernhard Gudden [4] was the first one to report that the electrical carriers of semiconductors are actually the impurities within their crystal lattices. If the impurity concentration is too high, the semiconductor becomes metallic, and if too low, more like an insulator.
\nImpurities are usually introduced to the bulk semiconductor in early stages of a device fabrication process. Most commonly used dopants are from group V (N, P and As) for n-type and group III (B, Al and Ga) for p-type doping purposes. Doping a bulk semiconductor can be relative easily achieved by adding dopant elements into the epilayer growing process, and the impurity level can be modulated by controlling the precursor gas concentrations [5]. Take a typical vertical MOSFET structure as an example; on the epilayer surface, specific n-type and p-type regions are required to form ohmic contact, MOS channel and body diode. The selective doping area is usually defined by doping masks made of dielectrics or metals using standard photolithography processes. Nowadays the selective doping of semiconductor is achieved mostly in two ways, namely, thermal diffusion and ion implantation.
\nIt is well known that molecules tend to move from higher to lower concentration regions, and this process can be enhanced by increasing the ambient temperature, pressure or concentration gradient in-between. This idea is adopted in semiconductor industry to introduce impurities using dopant sources with various phases: gas, liquid or solid. Thermal diffusion-based doping process often occurs in a quarts tube (see Figure 1) in an inert gas atmosphere to minimise contaminations. The dopants firstly arrived at the semiconductor surface form a relative high impurity concentration region; consequently, a concentration gradient exists between the surface and bulk, after which the diffusion is initiated by the thermal energy provided. With time going on, dopants diffuse deeper into the semiconductor bulk, and when the desired doping profile is obtained, it can be stopped quite conveniently by simply cutting the heat supply.
\nSchematic graph showing a typical dopant thermal diffusion process using a gas source.
Attributed to the developments of experimental physics, ion implanting dopants directly into semiconductors are also an option now. Ion implanters were not widely available to device engineers until the 1970s [6], while now it is commonly used in both lab and industry processing. In an ion implantation system, dopants are ionised atoms generated from an ion source shown in Figure 2. Being ionised, the dopant atoms can be accelerated by electromagnetic field to gain energy so high that, when hitting the target surface, they are able to break the semiconductor chemical bonds and penetrate into the crystal lattices. The implantation depth can be controlled by changing the electromagnetic field strength, and the resultant impurity concentration (cm−3) is determined by the amount of dopants supplied by the source, which is called ‘dose’, and the unit is number per specific area (cm−2).
\nThe schematic diagram of an ion implantation system [
In Si device processing, both thermal diffusion and ion implantation can be used depending on specific requirements. In fact, implantation followed by a short time thermal diffusion is becoming popular nowadays. For WBG semiconductors such as SiC, however, diffusion coefficients of common dopants are so low that are negligible below 1800°C [8], which leaves ion implantation the only option, and the PIA process is essential.
\nEven being a more complex and expensive system, ion implantation proved to be more controllable than thermal diffusion. Also, the movement of dopants in a thermal diffusion process may involve unexpected spreading in other directions, leading to poor doping profiles. This is not an issue for ion implantation since dopant movement in the semiconductor is minimal, which means the elimination of dopant out-diffusion. There are, of course, also limitations for ion implantations. First of all, it is essentially a dopant bombarding process, which means damages are inevitably induced to the target, mainly in the surface region. Secondly, as-implanted dopants are almost always interstitial (not chemically bonded), namely, not active carriers. An extra post-implantation annealing (PIA) process is typically required to recover the lattice damage and put the implanted dopants into substitutional positions so they can contribute to current conduction, called dopant activation.
\nThe activation of dopants in 4H-SiC has been intensively studied, and the efforts are mainly put into two directions, namely, protecting the semiconductor surface morphology while at the same time maximising the active concentration of implanted dopants.
\nThe temperature required for SiC post-implantation activation (PIA) is very high that above 1400°C [9, 10] is common for n-type and even higher (>1600°C) for p-type [11, 12, 13] since acceptors generally sit deeper in the band gap than donors, namely, more difficult to activate. This high temperature means conventional quartz tubes are not up to the task and high melting point tubes made of Al2O3 and SiC or similar have to be used. Also, high-temperature annealing leads to a roughened semiconductor surface (known as ‘step bunching’), enhanced at implanted regions. This can deteriorate the performance of interface features such as Schottky contacts and FET channels [14, 15, 16]. A protection capping layer is often used to preserve the SiC surface; such cap materials studied for 4H-SiC include AlN [17, 18], BN/AlN [19] and graphite [12, 15]. AlN and BN/AlN processes are found complex and expensive, thus not widely accepted. The graphite cap proved to be effective in preserving surface morphology up to 1800°C [11] but may reduce the MOSFET channel mobility due to the excessive silicon vacancies, which are most likely induced by the reaction between diffused Si atoms and the graphite [11, 20]. A SiO2 layer should not react with Si or C at the common annealing temperatures and can be easily deposited by CVD method and removed via HF etching. It was also studied and resulted a similar surface roughness level as a graphite cap with the same annealing conditions [21]. In the few literatures on 3C-SiC, n-type implanted 3C-SiC was studied for different annealing conditions (1150–1400°C) with [22] and without [23, 24] a graphite cap, and it turned out that there was little advantage of using a graphite cap in terms of protecting the 3C-SiC surface, probably because the temperature limited by Si substrates is not high enough to make the difference.
\nFor a given implanted doping level, the active dopant concentration in SiC generally increases with the PIA temperature. And for a fixed PIA temperature, the active dopant concentration increases with the implanted doping level [25], although the percentage of activated dopants (activation rate) seems to decrease [9]. Complete activation of N-type implanted 4H-SiC has been demonstrated by annealing at 1700°C and using phosphorous as dopant [26], while P-type material still remains a challenge [12].
\nMost metals are known as highly electrical and thermal conductive attributed to their delocalised electrons, not to mention the convenient alloying process which helps to form reliable interactions for packaging. Consequently, they are the most widely used material for contact materials in semiconductor industry. Dating back to Braun’s discovery in 1874 [27], the study of metal/semiconductor (M-S) interface is almost as old as the semiconductor device itself. A lot of huge efforts were put into exploring the M-S interface, and there had been classic physics models that were well developed. Yet still, this area remains active with new discoveries reported, and novel theories developed continuously. The emergence and adoption of WBG semiconductors raise discussions on new experimental results, and the well-established theories are challenged.
\nIt can be seen in Figure 3 that the work functions of most metals used in electronic industry are quite big compared with Si affinity, that is, an inherent energy barrier exists between metal/Si interfaces, preventing free carrier exchange. And due to a much lower affinity value (except for 3C-SiC), this barrier is only getting higher at a metal/SiC interface, which also explains why Schottky behaviour is typically observed for as-deposited metal contacts on 4H-SiC. To fabricate an ohmic contact, increasing the contact region local doping level (via thermal diffusion or ion implantation) is the most common way for both Si and SiC. When the contact region is lowly doped, the depletion region is quite wide that the electron exchange at the M-S interface is only possible when electrons overcome the barrier by gaining enough energy as shown in Figure 4, usually thermally activated and thus called thermionic emission (TE). If doping level is very high, the depletion region becomes quite narrow, and electrons can tunnel through the barrier freely with the help of an external electric field, which is called field emission (FE). And if the doping value is in the middle, the depletion region is narrowed but not enough to enable electron tunnelling. In this case, electrons still need extra thermal energy to ‘climb up’ the barrier, but not as much as TE. The energy required just needs to be adequate for the electrons to ‘climb’ to a position shallow enough for tunnelling that begins to take effect. Since both TE and FE mechanisms are involved, this is therefore called as thermionic/field emission (TFE).
\nBand diagrams of Si, 3C-, 4H- and 6H-SiC and work functions of commonly used metals in electronic industry [
Metal-semiconductor (n-type) interface carrier conduction mechanisms for different doping levels.
Among all, FE is the most desired conduction mechanism for deletion-type ohmic contact fabrication, since it is not a thermally activated process, namely, the electrical performance is relative temperature insensitive, which is attractive in more reliable device operation point of view. In real cases, both TFE and FE conduction are quite common. To predict the potential conduction mechanism at the SiC ohmic contact interface, the characteristic energy E00 of 3C-, 4H- and 6H-SiC as well as Si is calculated [30] for doping values from 1 × 1016 to 1 × 1020 cm−3and plotted in Figure 5. Dielectric constants and electron conductivity effective mass are shown in Table 1. The specific boundaries between three mechanisms may vary a bit between groups; the one used in Figure 5 is proposed by Schroder [31]. As can be seen, to enable FE tunnelling, a doping level above 1 × 1020 cm−3 is required for all semiconductors studied here.
\nCharacteristic energy E00 as a function of doping density for n-type Si, 3C-, 4H- and 6H-SiC.
Semiconductor | \nDielectric constant | \nElectron conductivity effective mass | \n
---|---|---|
Si | \n11.7 | \n0.26 | \n
3C-SiC | \n9.72 | \n0.32 | \n
4H-SiC | \n9.66 | \n0.36 | \n
6H-SiC | \n9.66 | \n0.57 | \n
Dielectric constants and electron conductivity effective mass of Si, 3C-, 4H- and 6H-SiC [32].
Until now, the contact local doping level has been considered as a constant, which cannot be true for WBG materials. This is because with a wider band gap, dopants naturally sit in deeper energy levels and may not be thermally ionised at room temperature; it is called ‘freeze-out’ [33]. The partial ionisation of carriers leads to quite different ohmic contact performances from conventional theories. Field emission, for example, in which case the contact resistance used to be temperature independent, now will drop with elevating temperature. This is because with more dopants ionised, the contact local doping increases; thus, the depletion width is reduced [34], in favour of the field emission conduction. On the other hand, partial ionisation also means it is more difficult to achieve lower contact resistance at room temperature. To compensate this, after metal deposition on even very highly doped SiC films, extra annealing step (1000–1200°C) is usually required to form a homogeneous silicide or carbide layer at the contact interface, which further lowers the Schottky barrier height, leading to a lower contact resistance. For N-type ohmic contact, nickel-based alloys are typically used, and resultant silicides are Ni2Si [35], while for P-type, Ti/Al alloys are common, leading to the formation of TiC or Ti3SiC2 [36] at the interface after the contact anneal. The complete story behind the rapid thermal anneal for SiC ohmic contact is still not clear; apart from the silicide reaction, which had been consistently observed and confirmed, local carbon clusters [37, 38] enriched at close to the contact interface, potentially providing more free carriers, were also often discussed and may have played a part, too. Specific contact resistance as low as 1 × 10−6 Ω cm2[9, 39] can be obtained on N-type SiC ohmic contact, and for the more difficult P-type due to deeper acceptor level, a higher value around 1 × 10−4 Ω cm2 is typical [12, 36, 40].
\nEarly MOSFETs have a long channel, leading to excessive on-state resistance which is not appropriate for power electronics, thus only applied in low power levels such as microprocessors, microcontrollers and logic circuits. On the other hand, the voltage-control and fast-switching features of MOSFETs are very attractive for power switch applications; consequently many efforts had been put into making power MOSFETs. The first high-voltage structure was developed in the 1970s and called V-MOSFET [41], named after the V-shape grove channel as seen in Figure 6a. This design never got popular due to the difficulty in fabricating a smooth V-shape trench on Si substrates, which was at that time formed by potassium hydroxide-based etching, whereas etching rate varies in different crystal orientations [42]. Also, the pointy trench bottom causes severe electric field crowding and easily leads to device early breakdown. Not long after, a planar structure shown in Figure 6b was invented. Instead of a V-shape grove, the channel was defined by controlling the thermal diffusion of dopants in the P-base and N+ source regions, thus called vertical-diffused (VD) MOSFET. With main features relatively easy to fabricate and quite reliable, VD-MOSFET is the most successful design up to date. To achieve higher forward current density, the cell pitch of VD-MOSFET is usually made as small as possible. However, the narrow JFET region between two P-bases restricts the current flowing between channels and drift region, inducing extra on-resistance [43]. In the late 1980s, U-MOSFET design (Figure 6c) was proposed as a potential solution of getting rid of the JFET region. U-MOSFET is similar to the V-groove design in the sense that both of them use a trench to eliminate the JFET region, reducing the device on-resistance. By the time U-MOSFET was proposed, Si etching technology had been greatly improved that rounded trench corners are possible with reactive ion etching or other techniques [44]. However, the trench MOS interface and oxide reliability issues are not fully solved; consequently, U-MOSFETs still cannot compete with their planar counterparts.
\nSchematic structure views of various MOSFET designs.
All three power MOSFET designs introduced above have a vertical structure to maximise current handling ability of discrete devices. For vertical devices, the current rating can be increased by simply enlarging the device active area, such as bigger contacts for diodes or more parallel cells for MOSFETs. In some applications where power devices and control and logic circuits are integrated (e.g. smart power devices, power ICs), the processing and packaging may require all electrodes on the same side of the device, which makes a lateral design necessary, and this is where lateral diffused (LD) MOSFET fits in. As a modification from the long channel design, LDMOSFET usually has a much shorter channel length to minimise the on-resistance. Meanwhile, a long drift region is included for high-voltage purpose as seen in Figure 6d. Unlike vertical designs whose breakdown voltage is constrained by the drift region (epilayer) thickness, LDMOSFET utilises the semiconductor surface to greatly increase the device blocking voltage. Inevitably, the current conducting ability of LDMOSFET has to be greatly compromised. As a result, LDMOSFETs are mostly used for RF power amplifiers, microwave and medium power switching applications.
\nThe adoption of WBG semiconductors enables MOSFETs to be used in power electronics applications with much higher power levels. While the Si/SiO2 interface has been intensively studied and the technology being very mature, the SiC/SiO2 interface is still an active topic, revealing all kinds of possibilities and challenges.
\nApart from phonon and coulombic which also troubles the bulk region, for channel region there is an extra surface roughness scattering mechanism. Among all, the Coulombic scattering caused by extra charges at the MOS interface is more process dependent and has been the target of studies. In real life, gate oxides are often with defects acting as carriers’ leakage paths and cause early breakdown. By trapping and discharging carriers during the MOS device operation, these defects (also called states) are the main reason behind the severe Coulombic scattering. Extra charges found in most MOS systems are categorised into four groups, namely, mobile charges, fixed charges, oxide-trapped charges and interface charges. A schematic graph indicating the general location and polarity of various charges are shown in Figure 7.
\nCommon oxide charges at MOS interface with locations and charge polarity indicated.
Mobile charges are metal ionic impurities (such as Na+) introduced during the device fabrication process and can move freely in the oxide with a gate bias. Since positively charged, they will attract semiconductor electrons to the surface and induce extra band bending, leading to a shift of flat band voltage. Mobile charges are highly uncontrollable and thus must be minimised through clean and careful fabrication process. In contrast to mobile charges, fixed charges refer to those who do not move with gate biases. The origin of fixed charges is believed to be the excessive ions left near the interface after the oxidation process termination [45]. They are usually located in the oxide and close to the MOS interface as shown in Figure 7. Fixed charges can be both positive and negative, and the total amount depends heavily on the oxidation condition. Since fixed charges stay close to the interface, they also affect the semiconductor band bending. As a result, a shift of flat band voltage from the theoretical value is again observed.
\nInterface charges, as the name suggests, sit at the MOS interface. Energy levels of these traps are in the semiconductor band gap; consequently, they can act as carrier traps communicating (charge/discharge) with the bulk semiconductor during device operation. And since these traps are right at the MOS interface, they scatter the channel carriers much more than other charges. The origins of interface traps vary among different MOS systems. For Si/SiO2 interface, most of the interface traps come from unterminated Si dangling bonds. H2 annealing after the gate oxidation is typically applied to passivate the unterminated Si dangling bonds. Unlike the previous three, oxide-trapped charges are induced by the device operation rather than the fabrication process. The oxide layer, thermally grown or deposited, contains intrinsic defects such as oxygen vacancies [46]. Although these defects are electrically neutral, during the device operation, carriers may be injected into them and make them negatively or positively charged. Depending on the energy level, they may or may not be able to communicate with the semiconductor carriers. For those very close to the MOS interface that are able to be charged and discharged during device operation, they effectively behave as interface traps, otherwise similar to fixed charges.
\nWith all the superior electrical performance and the ability to be thermally oxidised, it is no surprise that there are a lot of interests in making SiC MOS devices. The most commercialised 4H-SiC is naturally mostly studied. The hexagonal lattice of 4H-SiC means there will be several faces available for oxidation. Most of the work has been devoted into the (0001) Si-face, the only one available in commercial wafer form. Following discussions are therefore mainly based on (0001) Si-face. There have been studies suggesting that MOS interface traps for all SiC polytypes are similar [47]; thus, the study on the 4H-SiC/SiO2 interface also provides a great insight for other polytypes. Unfortunately, the 4H-SiC/SiO2 interface turns out to be quite poor, and the electrical performance is not even close to the Si case. The interface trap density (Dit) at an as-grown 4H-SiC/SiO2 interface is typically close to 1013 cm−2 eV−1, which is hundreds of times higher than the Si/SiO2 interface [48]. The channel mobility generally decreases with increasing Dit; thus, the latter is commonly used as an indicator for the MOS interface quality. With decades of study, reasons behind the poor 4H-SiC/SiO2 interface are still not fully understood. In [46], a discussion was made on the potential origins of interface traps, and two sources were identified, first of which is the carbon accumulated at the MOS interface during the SiC oxidation process. The reactions occurring during Si and SiC oxidation processes can be generally expressed by reactions described in Eqs. (1) and (2):
\nDepending on the oxygen pressure, there may be some intermediate reactions [49], but it can be seen that SiC oxidation is accompanied by the release of gaseous carbon, either CO or CO2. However, the increase of oxide thickness after the oxidation process goes for a while makes it more difficult for carbon to escape, and the reaction (Eq. (3)) may occur instead:
\nThe theory of carbon failing to escape through thicker oxide naturally leads to the idea that there should be less carbon at the MOS interface with thinner oxide. Indeed, a recent study [50] demonstrated an almost ideal SiC/SiO2 interface with a very thin oxide layer (≈14 nm); the Dit value was below 1011 cm−2 eV−1. However, as mentioned before a certain oxide thickness (≈50 nm for SiC MOS devices) is necessary for a reasonable threshold voltage, which means very thin oxide is not practical in real device fabrications. Thin thermally grown oxide with deposited oxide on top of it may be an option but still not easy, since deposited oxide is known to contain many more defects than thermally grown ones [51].
\nThis leads to the second source of SiC/SiO2 interface traps, namely, oxide defects. Oxide defect-induced traps are essentially the oxide-trapped charges mentioned before. In SiC/SiO2 study they are also known as ‘near-interface traps’ since they do not actually sit at the interface but instead are located in the SiO2 very close to the interface. For Si, energy levels of oxide-trapped states are in the conduction band, thus not electrically active. For SiC, however, whose band gaps are 2–3 times wider, many of the oxide-trapped charges located in the band gap are being electrically active, as has been confirmed by photon-stimulated electron tunnelling [52]. The near-interface traps have time constants much smaller than the carbon clusters, which are also called fast traps while the latter known as slow traps. A schematic representation of the carbon cluster mode is illustrated in Figure 8 with energy levels of the traps specified. Due to the much lower mobility of holes than electrons, SiC MOS devices are almost exclusively based on n-channel design; naturally, the traps scattering the channel carriers most are the ones located close to the conduction band edge. Figure 8 shows that the 4H-SiC conduction band edge is mostly troubled by near-interface traps and π-bonded carbon clusters, with the former more dominant. Both of these traps are accepter-like, namely, negatively charged when being occupied, which can explain the quite positive threshold values often observed for 4H-SiC MOS devices. On the other hand, 3C-SiC is free from near-interface traps attributed to a smaller band gap but is still troubled by π-bonded carbon clusters. These carbon clusters near the 3C-SiC conduction band edge are donor-like, thus positively charged if unoccupied, which means the resultant threshold voltage may be more negative. Dangling bonds still contribute to some of the interface traps here but are only secondary concerns. Consequently, for SiC, H2 annealing is not as effective as it is for Si. Other techniques had to be explored for SiC/SiO2 interface optimisation.
\nSchematic representation of the ‘carbon cluster model’ [
The efforts put into improving the SiC/SiO2 interface can be grouped into three directions, namely, post-oxidation annealing (POA), channel counter-doping and high-temperature oxidation.
\nNitridation may be the most widely used method to improve the 4H-SiC/SiO2 interfaces. It is usually achieved by annealing thermally grown gate oxides in nitrogenous trace gas environment (NO or N2O), called post-oxidation annealing (POA). It is believed that the N-O bond breaks at high temperature and supplies free oxygen which oxidises 4H-SiC [54]; consequently, nitridation by POA is accompanied by a further growth of the oxide, although not significantly. Gate oxide can also be directly grown in such atmosphere to obtain similar benefits. Previous X-ray photoelectron spectroscopy (XPS) results showed that after NO/N2O POA, there were fixed nitrogen atoms near the interface with a density ≈1 × 1014 cm−2 [55], even after removing all the oxide by a hard HF etching, indicating that nitrogen atoms were strongly bonded to 4H-SiC substrate. There had been evidence showing the nitridation reduced both carbon-related and near-interface traps [56], even though there is still no complete explanation of the theory established. The near-interface traps are probably reduced by the formation of an oxynitride layer between 4H-SiC and gate oxide, which redefines the oxide/semiconductor boundary [57], and the oxide-trapped charges are no longer near the interface. In terms of the carbon clusters, they are probably decomposed by inserted nitrogen atoms, which shift the energy levels of remaining clusters deeper into band gap, namely, further away from the conduction band edge and less effective in terms of scattering channel carriers [58]. Apart from N2O/NO, it was reported that annealing the gate oxide in a phosphorous trace atmosphere (POCl3 [59] or P2O5 [60]) also led to a channel mobility improvement, although it introduced severe threshold voltage instability as a result of SiO2 being converted into phosphor silicate glasses. Reducing the number of interface traps by introducing extra atoms into the interface is called passivation, and regardless of the source (N or P), it is always required that enough foreign atoms diffuse through the gate oxide and reach the interface. Certainly higher annealing temperature and time duration will help with that; however, due to the very low diffusion coefficient of nitrogen in SiC, nitrogen atoms saturate only within a monolayer deeper into the interface [61], and consequently the mobility value does not increase further, and the peak value typically stays around 40 cm2/V s [62]. Phosphorous has a higher saturation density than nitrogen in 4H-SiC, but still, the peak mobility value stays around 80 cm2/V s [63] regardless of further increased annealing time durations.
\nThe limitation of thermal diffusion naturally leads to the idea of incorporating more passivating atoms into the interface by ion implantation, also known as channel counter-doping. 4H-SiC MOSFETs were fabricated on nitrogen-implanted substrates and higher peak channel mobility (≈60 cm2/V s) than unimplanted or even NO/N2O annealed samples was observed [64, 65, 66], before the mobility curve becomes significantly distorted for a dose level of 2.2 × 1014 cm−2. The success of counter-doping technique brings in another possible explanation [66] other than the defect passivation for the improved 4H-SiC/SiO2 interface. With the channel surface being partially compensated by the nitrogen implantation, a depletion region is formed between the thin counter-doped n-type surface and the underlying p-type channel region. The n-type counter-doped surface may be positively charged even without any gate bias due to the p-n junction depletion. In inversion mode, higher carrier mobility can be achieved since these positive charges will cancel part of the negative electric field built in the channel region, reducing the surface roughness scattering. Apart from nitrogen, other elements were also studied for the counter-doping. In [67], a variety of ions including B, N, F, Al, P and Cl were individually implanted into a 4H-SiC substrate, which was then oxidised to make MOS capacitors. It turned out only group V elements (N and P) led to a reduced Dit while the other increased it. A negative shift of flat band voltage is always observed for N or P counter-doped MOSFETs, a natural result of the channel being partially compensated. For devices fabricated with N- or P-based POAs, similar negative shifts were also observed, which suggests that counter-doping may have occurred in POAs through minor thermal diffusion, making it difficult to distinguish the effects from passivation and counter-doping. More recently [68], counter-doping 4H-SiC MOSFET channel using Sb was studied, and a peak field-effect mobility as high as 80 cm2/V s was obtained. The fact that the mobility value dropped to almost zero at 70 K (Sb freezes out) confirmed that the improvement is not achieved by defect passivation, since otherwise the mobility should only be influenced by SiC electrons and the Sb freeze-out will have minimal effect. Further processing the Sb counter-doped sample with NO POA led to an increased channel mobility in all temperatures including 70 K, which suggests that the counter-doping and defect passivation may be two independent mechanisms, yet both increase the channel mobility.
\nBoth previous methods introduce extra foreign element atoms to the SiC/SiO2 system. It will be ideal to have an as-oxidised MOS interface free from excessive interface traps. High-temperature oxidation is considered as a possible solution. It was firstly reported in [69] that Dit decreases with increasing oxidation temperature, which was related to a reduction of SiCxOy near the interface at higher oxidation temperature. More recently [70], a channel mobility of 40 cm2/V s was reported for 4H-SiC MOSFET with gate oxide thermally grown at 1500°C without any further treatment, and the XPS measurement suggests a reduction of carbon near the interface. The mechanism behind high-temperature oxidation is still unclear and needs to be explored more.
\nThe reduction in dimensionality caused by confining electrons (or holes) to a thin semiconductor layer leads to a dramatic change in their behavior. This principle can be developed by further reducing the dimensionality of the electron’s environment from a two-dimensional quantum well to a one-dimensional quantum wire and eventually to a zero-dimensional quantum dot. In this context, however, dimensionality refers to the degree of electron momentum freedom. In fact, within a quantum wire, unlike the quantum well where the electron is confined in just one dimension, it is confined in two dimensions and thus, the freedom degree is reduced to one. In a quantum dot, the electron is confined in all three-dimensions, hence reducing the degree of freedom to zero. Under certain growth conditions, when a thin semiconductor layer grows on a substrate having a completely different lattice constant, the thin layer is spontaneously arranged or changes into quantum dots through self-assembles while attempting to minimize the total strain energy between the bonds. Microscopy can show quantum dots that are in the shapes of pyramids, square based, and tetrahedron [1]. The performance expected from quantum dot lasers is often due to the density of their quasi-atomic states. Using the quantum structures confined in some dimensions will reduce the momentum freedom of the carrier in a certain direction. Ideally, carriers are completely enclosed in quantum dots. Therefore, the density of quantum dot states, that is, the number of states per volume unit and per energy unit, is expressed by the delta function. The gain spectrum amplitude is determined only by homogeneous broadening due to intraband relaxation at the quantum dot. These gain properties are the basis of the features that give the quantum dot laser some advantages over conventional lasers [2, 3]. The effect of carrier dynamics on the performance of quantum dot laser and the possibility of bi-exciton lasing have been studied. Bi-excitons are achieved if the increase in ground state of the quantum dot reaches the laser threshold, and if the carrier relaxation is rapidly below 100 ps, the laser will be observed [4, 5]. Carrier relaxation in quantum dots (QDs) is studied widely when applications of these devices are reported for optical communications [6]. The problem of
The carrier relaxation process within quantum dots is actually two steps, as shown in the Figure 1.
Carrier relaxation in a quantum dot [
One is the carrier relaxation from continuous energy levels within the discrete levels of the quantum dot (A, Red Color). Another is the relaxation between discrete levels within dots (B, Blue Color). In many light experiments, as well as in quantum dot lasers, carriers go through these two steps unless they are brought directly into discrete levels by excitation resonant or tunneling. Since the principle of energy conservation must be satisfied for the carrier to relax, relaxing carriers transfer the corresponding energy to other particles (such as phonons) and to other carriers in the bulk. Therefore, “the relaxation rate strongly depends on the density of final levels and on the number of particles other than the transition matrix elements” [4]. Introducing the LO- and LA-phonons, it is possible to satisfy the energy conservation rule [11], is shown in Figure 2a [4, 12]. Such a two-phonon process decreases the lifetimes severely [4], but it cannot be adequate to relax back the carriers inside the dots deeply. Carrier trapping into the dot energy levels and hence energy conservation rule, are satisfied whenever the number of carriers outside the dots are increased. So, Auger process can be proper phenomenon due to increase of the captured carriers that occupy the QD energy levels [13]. Therefore, with more injected currents or equivalently more injected carriers, the relaxation lifetime increases and Auger process can be effective due to carrier relaxation into deep lower levels by a step-like energy decrement. Illustration of the carrier relaxation processes, considering the Auger effect, is shown in Figure 2b. Auger scattering is more important when the density of excited carriers is high. As illustrated in Figure 2b, one of the two electrons in the wetting layer (WL) is captured by the Auger mechanism in the excited state (ES) of QD, while the other electron is emitted upward in the WL or separate confinement heterostructure (SCH). Then, the electron which is captured in ES transfers its energy to the third electron of the barrier or even more probably to another electron in the excited state (ES) of QD and relaxes downward in the QD ground state (GS).
Carrier capture and relaxation processes [
Usually, the carrier and photon behaviors in SAQD semiconductor lasers are expressed by a set of coupled differential equations called rate equations [14].
In Figure 3, there is a simple energy band diagram to explain different levels, ground state (GS), excited state (ES), and wetting layer (WL) state, in these structures [14]. In this model, there are some injected carriers into a SCH barrier with a rate of
A sample energy band diagram for a SADQ laser considering the excited state.
They can either relax with a time of
With the following parameters:
In the above equations,
Where
and
Parameters
Where
In this relation,
Where
Where
Where
Where
Section 2.3 covers investigation of the effects of some parameters expressed in the rate equations on the performance of quantum dot laser. This section is based on the results obtained the reference [22].
Figure 4 shows the results of our simulations on the
Effects of the inhomogeneous broadening variations on the
This effect can be studied in the dynamic response of a SAQD laser, too. The results of such variations for the frequency responses are plotted in Figure 5. The simulation results show that for higher inhomogeneous broadening factors the frequency responses of the laser deteriorates.
Effects of the inhomogeneous broadening variations on the frequency response of SAQD laser with different values of
The effect of carrier recombination in WL,
The
The effect of carrier recombination in the WL state on the small-signal frequency response of laser is shown in Figure 7. As shown, the carrier recombination in the WL state has no considerable effect on modulation response.
The modulation response of a SAQD laser for different values of carrier recombination in WL.
Figure 8 shows the effect of carrier recombination inside quantum dot,
The
The effect of carrier recombination inside quantum dot on frequency response has been shown in Figure 9. What is important here is that, as
The modulation response of a SAQD laser for different values of carrier recombination inside quantum dot.
The effect of carrier escape time from ground state to excited state and from excited state to WL state on
The
Figure 11 also shows that, as the carrier escape time degrades from ground state to excited state and from excited state to wetting layer, the frequency response degrades as well.
The modulation response of a SAQD laser for different values of carrier escape time from ground state to excited state and from excited state to wetting layer.
Figure 12 show the frequency response for different amounts of QDs coverage factor
Modulation response of a SAQD laser at different coverage factors;
Figure 13 shows the simulation results for the effects of coverage factor
The modulation response of a SAQD laser for different values of coverage factor and
Figure 14 shows the
Figure 15 shows the simulation results of modulation response for different quantities of QD height. As the QD height degrades, the modulation band width improves. The reason for modulation band width improvement while the QD height degrades can be caused by increasing carrier confinement within quantum dot in growth direction (
Modulation response of a SAQD laser at different QD heights.
Figure 16 shows the effect of stripe width of the laser cavity on frequency response. As the stripe width of the laser cavity degrades, the modulation band width improves. It is inferred from the figure that degradation of the stripe width of the laser cavity and therefore the degradation of the active region can provide a higher total capture rate. Hence, it results in a greater modulation band width.
Modulation response of a SAQD laser at different stripe widths of the laser cavity.
To solve the rate equations of a SAQD laser, considering the excited state and Auger effect, a conceptual equivalent electrical circuit is proposed is shown in Figure 17. The aforementioned equations convert to some simple electrical circuit equations and then, the resulting circuit is simulated by a circuit simulator such as HSPICE [23]. The corresponding parameters for the equivalent circuit model of SAQD lasers are described in detail in Ref. [24].
A modified equivalent circuit model of SAQD lasers, considering the Auger effect.
In this simulation, typical parameters, which are shown in Table 1, are used.
Quantity | Value |
---|---|
Inhomogeneous broadening, | 20 meV |
Diffusion in SCH, | 6 ns |
SCH recombination, | 4.5 ns |
WL recombination, | 3 ns |
Capture from WL to ES, | 1 ps |
Capture from ES to GS, | 7 ps |
ES and GS recombination, | 2.8 ns |
Energy separation SCH and WL, state | 84 meV |
Average energy separation WL and ES | 100 meV |
Average energy separation ES and GS | 80 meV |
Average recombination energy from GS, EGS | 0.96 eV |
Average recombination energy from ES, EES | 1.04 eV |
Spin-orbit interaction energy of QD material, Δ | 0.35 eV |
Facet reflectivity, | 30%, 90% |
Active region length, | 900 μm |
SCH thickness, | 90 nm |
WL thickness, | 1 nm |
Active region width, | 10 μm |
Active region volume, | 2.2 × 10−16 m3 |
QD density of QD per layer, | 5 × 1010 cm−2 |
QD density per unit volume, | 6.3 × 1022 m−3 |
QD optical confinement factor, | 0.06 |
Intrinsic absorption coefficient, | 1 cm−1 |
Spontaneous emission coupling efficiency, | 10−4 |
Output power coupling coefficient, | 0.449 |
SCH, WL, and QD (GS, ES) diode ideality factors, | 2 |
Figure 18 illustrates the output power as a function of injected currents neglecting the Auger effect for
The
This phenomenon can be considered in dynamic response of the laser, too. Application of the proposed model to SAQD lasers considering this effect for dynamic response of the laser are shown in Figure 19. With higher relaxation times
Modulation response of a SAQD laser neglecting the Auger effect. (a) Various capture times
Figure 20(a) and (b) illustrate the output power as a function of the injected currents considering the Auger effect for
The
Figure 21 shows the effect of Auger coefficient increment on the small-signal frequency response of the laser for different values of
Modulation response of a SAQD laser considering the Auger effect for different values of carrier recombination inside quantum dot (a)
The Auger effect can be overcome in the phonon bottleneck problem in SAQD lasers propose a modified equivalent circuit for simulation of the rate equations, considering this effect for the first time. The static and dynamic behavior of these lasers were studied. It is found that, if we want to solve the rate equations of a SAQD laser, it is possible to compensate the effect of phonon bottleneck by introducing the Auger effect. This can decrease the threshold current and increase the quantum efficiency of the SAQD laser, so the output power can be raised. It is shown that the Auger effect can increase the modulation bandwidth of a SAQD laser. Quantum dot lasers have been more favored for applications in optical communications, silicon photonics, lightwave telecommunication systems, high power lasers, Q-switched or mode locked lasers for short pulse generation and broad band light sources. The future implications of quantum dot lasers are issues such as quantum dot lasers and integration with Si photonic integrated circuits and colloidal quantum dot lasers.
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MRI is commonly used once treating brain, prostate cancers, ankle and foot. The Magnetic Resonance Imaging (MRI) images are usually liable to suffer from noises such as Gaussian noise, salt and pepper noise and speckle noise. So getting of brain image with accuracy is very extremely task. An accurate brain image is very necessary for further diagnosis process. During this chapter, a median filter algorithm will be modified. Gaussian noise and Salt and pepper noise will be added to MRI image. A proposed Median filter (MF), Adaptive Median filter (AMF) and Adaptive Wiener filter (AWF) will be implemented. The filters will be used to remove the additive noises present in the MRI images. The noise density will be added gradually to MRI image to compare performance of the filters evaluation. The performance of these filters will be compared exploitation the applied mathematics parameter Peak Signal-to-Noise Ratio (PSNR).",book:{id:"6144",slug:"high-resolution-neuroimaging-basic-physical-principles-and-clinical-applications",title:"High-Resolution Neuroimaging",fullTitle:"High-Resolution Neuroimaging - Basic Physical Principles and Clinical Applications"},signatures:"Hanafy M. Ali",authors:[{id:"213318",title:"Dr.",name:"Hanafy",middleName:"M.",surname:"Ali",slug:"hanafy-ali",fullName:"Hanafy Ali"}]},{id:"41589",doi:"10.5772/50323",title:"The Role of the Amygdala in Anxiety Disorders",slug:"the-role-of-the-amygdala-in-anxiety-disorders",totalDownloads:9671,totalCrossrefCites:4,totalDimensionsCites:28,abstract:null,book:{id:"2599",slug:"the-amygdala-a-discrete-multitasking-manager",title:"The Amygdala",fullTitle:"The Amygdala - A Discrete Multitasking Manager"},signatures:"Gina L. Forster, Andrew M. Novick, Jamie L. Scholl and Michael J. 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Particularly in the case of motor imagery BCIs, users may need several training sessions before they learn how to generate desired brain activity and reach an acceptable performance. A typical training protocol for such BCIs includes execution of a motor imagery task by the user, followed by presentation of an extending bar or a moving object on a computer screen. In this chapter, we discuss the importance of a visual feedback that resembles human actions, the effect of human factors such as confidence and motivation, and the role of embodiment in the learning process of a motor imagery task. Our results from a series of experiments in which users BCI-operated a humanlike android robot confirm that realistic visual feedback can induce a sense of embodiment, which promotes a significant learning of the motor imagery task in a short amount of time. We review the impact of humanlike visual feedback in optimized modulation of brain activity by the BCI users.",book:{id:"6610",slug:"evolving-bci-therapy-engaging-brain-state-dynamics",title:"Evolving BCI Therapy",fullTitle:"Evolving BCI Therapy - Engaging Brain State Dynamics"},signatures:"Maryam Alimardani, Shuichi Nishio and Hiroshi Ishiguro",authors:[{id:"11981",title:"Prof.",name:"Hiroshi",middleName:null,surname:"Ishiguro",slug:"hiroshi-ishiguro",fullName:"Hiroshi Ishiguro"},{id:"231131",title:"Dr.",name:"Maryam",middleName:null,surname:"Alimardani",slug:"maryam-alimardani",fullName:"Maryam Alimardani"},{id:"231134",title:"Dr.",name:"Shuichi",middleName:null,surname:"Nishio",slug:"shuichi-nishio",fullName:"Shuichi Nishio"}]}],mostDownloadedChaptersLast30Days:[{id:"29764",title:"Underlying Causes of Paresthesia",slug:"underlying-causes-of-paresthesia",totalDownloads:192666,totalCrossrefCites:3,totalDimensionsCites:7,abstract:null,book:{id:"1069",slug:"paresthesia",title:"Paresthesia",fullTitle:"Paresthesia"},signatures:"Mahdi Sharif-Alhoseini, Vafa Rahimi-Movaghar and Alexander R. Vaccaro",authors:[{id:"91165",title:"Prof.",name:"Vafa",middleName:null,surname:"Rahimi-Movaghar",slug:"vafa-rahimi-movaghar",fullName:"Vafa Rahimi-Movaghar"}]},{id:"63258",title:"Anatomy and Function of the Hypothalamus",slug:"anatomy-and-function-of-the-hypothalamus",totalDownloads:4558,totalCrossrefCites:6,totalDimensionsCites:12,abstract:"The hypothalamus is a small but important area of the brain formed by various nucleus and nervous fibers. Through its neuronal connections, it is involved in many complex functions of the organism such as vegetative system control, homeostasis of the organism, thermoregulation, and also in adjusting the emotional behavior. The hypothalamus is involved in different daily activities like eating or drinking, in the control of the body’s temperature and energy maintenance, and in the process of memorizing. It also modulates the endocrine system through its connections with the pituitary gland. Precise anatomical description along with a correct characterization of the component structures is essential for understanding its functions.",book:{id:"6331",slug:"hypothalamus-in-health-and-diseases",title:"Hypothalamus in Health and Diseases",fullTitle:"Hypothalamus in Health and Diseases"},signatures:"Miana Gabriela Pop, Carmen Crivii and Iulian Opincariu",authors:null},{id:"57103",title:"GABA and Glutamate: Their Transmitter Role in the CNS and Pancreatic Islets",slug:"gaba-and-glutamate-their-transmitter-role-in-the-cns-and-pancreatic-islets",totalDownloads:3478,totalCrossrefCites:3,totalDimensionsCites:9,abstract:"Glutamate and gamma-aminobutyric acid (GABA) are the major neurotransmitters in the mammalian brain. Inhibitory GABA and excitatory glutamate work together to control many processes, including the brain’s overall level of excitation. The contributions of GABA and glutamate in extra-neuronal signaling are by far less widely recognized. In this chapter, we first discuss the role of both neurotransmitters during development, emphasizing the importance of the shift from excitatory to inhibitory GABAergic neurotransmission. The second part summarizes the biosynthesis and role of GABA and glutamate in neurotransmission in the mature brain, and major neurological disorders associated with glutamate and GABA receptors and GABA release mechanisms. The final part focuses on extra-neuronal glutamatergic and GABAergic signaling in pancreatic islets of Langerhans, and possible associations with type 1 diabetes mellitus.",book:{id:"6237",slug:"gaba-and-glutamate-new-developments-in-neurotransmission-research",title:"GABA And Glutamate",fullTitle:"GABA And Glutamate - New Developments In Neurotransmission Research"},signatures:"Christiane S. Hampe, Hiroshi Mitoma and Mario Manto",authors:[{id:"210220",title:"Prof.",name:"Christiane",middleName:null,surname:"Hampe",slug:"christiane-hampe",fullName:"Christiane Hampe"},{id:"210485",title:"Prof.",name:"Mario",middleName:null,surname:"Manto",slug:"mario-manto",fullName:"Mario Manto"},{id:"210486",title:"Prof.",name:"Hiroshi",middleName:null,surname:"Mitoma",slug:"hiroshi-mitoma",fullName:"Hiroshi Mitoma"}]},{id:"35802",title:"Cross-Cultural/Linguistic Differences in the Prevalence of Developmental Dyslexia and the Hypothesis of Granularity and Transparency",slug:"cross-cultural-linguistic-differences-in-the-prevalence-of-developmental-dyslexia-and-the-hypothesis",totalDownloads:3601,totalCrossrefCites:2,totalDimensionsCites:7,abstract:null,book:{id:"673",slug:"dyslexia-a-comprehensive-and-international-approach",title:"Dyslexia",fullTitle:"Dyslexia - A Comprehensive and International Approach"},signatures:"Taeko N. Wydell",authors:[{id:"87489",title:"Prof.",name:"Taeko",middleName:"N.",surname:"Wydell",slug:"taeko-wydell",fullName:"Taeko Wydell"}]},{id:"58597",title:"Testosterone and Erectile Function: A Review of Evidence from Basic Research",slug:"testosterone-and-erectile-function-a-review-of-evidence-from-basic-research",totalDownloads:1331,totalCrossrefCites:2,totalDimensionsCites:2,abstract:"Androgens are essential for male physical activity and normal erectile function. Hence, age-related testosterone deficiency, known as late-onset hypogonadism (LOH), is considered a risk factor for erectile dysfunction (ED). This chapter summarizes relevant basic research reports examining the effects of testosterone on erectile function. Testosterone affects several organs and is especially active on the erectile tissue. The mechanism of testosterone deficiency effects on erectile function and the results of testosterone replacement therapy (TRT) have been well studied. Testosterone affects nitric oxide (NO) production and phosphodiesterase type 5 (PDE-5) expression in the corpus cavernosum through molecular pathways, preserves smooth muscle contractility by regulating both contraction and relaxation, and maintains the structure of the corpus cavernosum. Interestingly, testosterone deficiency has relationship to neurological diseases, which leads to ED. Testosterone replacement therapy is widely used to treat patients with testosterone deficiency; however, this treatment might also induce some problems. Basic research suggests that PDE-5 inhibitors, L-citrulline, and/or resveratrol therapy might be effective therapeutic options for testosterone deficiency-induced ED. Future research should confirm these findings through more specific experiments using molecular tools and may shed more light on endocrine-related ED and its possible treatments.",book:{id:"5994",slug:"sex-hormones-in-neurodegenerative-processes-and-diseases",title:"Sex Hormones in Neurodegenerative Processes and Diseases",fullTitle:"Sex Hormones in Neurodegenerative Processes and Diseases"},signatures:"Tomoya Kataoka and Kazunori Kimura",authors:[{id:"219042",title:"Ph.D.",name:"Tomoya",middleName:null,surname:"Kataoka",slug:"tomoya-kataoka",fullName:"Tomoya Kataoka"},{id:"229066",title:"Prof.",name:"Kazunori",middleName:null,surname:"Kimura",slug:"kazunori-kimura",fullName:"Kazunori Kimura"}]}],onlineFirstChaptersFilter:{topicId:"18",limit:6,offset:0},onlineFirstChaptersCollection:[{id:"81646",title:"Cortical Plasticity under Ketamine: From Synapse to Map",slug:"cortical-plasticity-under-ketamine-from-synapse-to-map",totalDownloads:15,totalDimensionsCites:0,doi:"10.5772/intechopen.104787",abstract:"Sensory systems need to process signals in a highly dynamic way to efficiently respond to variations in the animal’s environment. For instance, several studies showed that the visual system is subject to neuroplasticity since the neurons’ firing changes according to stimulus properties. This dynamic information processing might be supported by a network reorganization. Since antidepressants influence neurotransmission, they can be used to explore synaptic plasticity sustaining cortical map reorganization. To this goal, we investigated in the primary visual cortex (V1 of mouse and cat), the impact of ketamine on neuroplasticity through changes in neuronal orientation selectivity and the functional connectivity between V1 cells, using cross correlation analyses. We found that ketamine affects cortical orientation selectivity and alters the functional connectivity within an assembly. These data clearly highlight the role of the antidepressant drugs in inducing or modeling short-term plasticity in V1 which suggests that cortical processing is optimized and adapted to the properties of the stimulus.",book:{id:"11374",title:"Sensory Nervous System - Computational Neuroimaging Investigations of Topographical Organization in Human Sensory Cortex",coverURL:"https://cdn.intechopen.com/books/images_new/11374.jpg"},signatures:"Ouelhazi Afef, Rudy Lussiez and Molotchnikoff Stephane"},{id:"81582",title:"The Role of Cognitive Reserve in Executive Functioning and Its Relationship to Cognitive Decline and Dementia",slug:"the-role-of-cognitive-reserve-in-executive-functioning-and-its-relationship-to-cognitive-decline-and",totalDownloads:23,totalDimensionsCites:0,doi:"10.5772/intechopen.104646",abstract:"In this chapter, we explore how cognitive reserve is implicated in coping with the negative consequences of brain pathology and age-related cognitive decline. Individual differences in cognitive performance are based on different brain mechanisms (neural reserve and neural compensation), and reflect, among others, the effect of education, occupational attainment, leisure activities, and social involvement. These cognitive reserve proxies have been extensively associated with efficient executive functioning. We discuss and focus particularly on the compensation mechanisms related to the frontal lobe and its protective role, in maintaining cognitive performance in old age or even mitigating the clinical expression of dementia.",book:{id:"11742",title:"Neurophysiology",coverURL:"https://cdn.intechopen.com/books/images_new/11742.jpg"},signatures:"Gabriela Álvares-Pereira, Carolina Maruta and Maria Vânia Silva-Nunes"},{id:"81488",title:"Aggression and Sexual Behavior: Overlapping or Distinct Roles of 5-HT1A and 5-HT1B Receptors",slug:"aggression-and-sexual-behavior-overlapping-or-distinct-roles-of-5-ht1a-and-5-ht1b-receptors",totalDownloads:19,totalDimensionsCites:0,doi:"10.5772/intechopen.104872",abstract:"Distinct brain mechanisms for male aggressive and sexual behavior are present in mammalian species, including man. However, recent evidence suggests a strong connection and even overlap in the central nervous system (CNS) circuitry involved in aggressive and sexual behavior. The serotonergic system in the CNS is strongly involved in male aggressive and sexual behavior. In particular, 5-HT1A and 5-HT1B receptors seem to play a critical role in the modulation of these behaviors. The present chapter focuses on the effects of 5-HT1A- and 5-HT1B-receptor ligands in male rodent aggression and sexual behavior. Results indicate that 5-HT1B-heteroreceptors play a critical role in the modulation of male offensive behavior, although a definite role of 5-HT1A-auto- or heteroreceptors cannot be ruled out. 5-HT1A receptors are clearly involved in male sexual behavior, although it has to be yet unraveled whether 5-HT1A-auto- or heteroreceptors are important. Although several key nodes in the complex circuitry of aggression and sexual behavior are known, in particular in the medial hypothalamus, a clear link or connection to these critical structures and the serotonergic key receptors is yet to be determined. This information is urgently needed to detect and develop new selective anti-aggressive (serenic) and pro-sexual drugs for human applications.",book:{id:"10195",title:"Serotonin and the CNS - New Developments in Pharmacology and Therapeutics",coverURL:"https://cdn.intechopen.com/books/images_new/10195.jpg"},signatures:"Berend Olivier and Jocelien D.A. Olivier"},{id:"81093",title:"Prehospital and Emergency Room Airway Management in Traumatic Brain Injury",slug:"prehospital-and-emergency-room-airway-management-in-traumatic-brain-injury",totalDownloads:49,totalDimensionsCites:0,doi:"10.5772/intechopen.104173",abstract:"Airway management in trauma is critical and may impact patient outcomes. Particularly in traumatic brain injury (TBI), depressed level of consciousness may be associated with compromised protective airway reflexes or apnea, which can increase the risk of aspiration or result in hypoxemia and worsen the secondary brain damage. Therefore, patients with TBI and Glasgow Coma Scale (GCS) ≤ 8 have been traditionally managed by prehospital or emergency room (ER) endotracheal intubation. However, recent evidence challenged this practice and even suggested that routine intubation may be harmful. This chapter will address the indications and optimal method of securing the airway, prehospital and in the ER, in patients with traumatic brain injury.",book:{id:"11367",title:"Traumatic Brain Injury",coverURL:"https://cdn.intechopen.com/books/images_new/11367.jpg"},signatures:"Dominik A. Jakob, Jean-Cyrille Pitteloud and Demetrios Demetriades"},{id:"81011",title:"Amino Acids as Neurotransmitters. The Balance between Excitation and Inhibition as a Background for Future Clinical Applications",slug:"amino-acids-as-neurotransmitters-the-balance-between-excitation-and-inhibition-as-a-background-for-f",totalDownloads:19,totalDimensionsCites:0,doi:"10.5772/intechopen.103760",abstract:"For more than 30 years, amino acids have been well-known (and essential) participants in neurotransmission. They act as both neuromediators and metabolites in nervous tissue. Glycine and glutamic acid (glutamate) are prominent examples. These amino acids are agonists of inhibitory and excitatory membrane receptors, respectively. Moreover, they play essential roles in metabolic pathways and energy transformation in neurons and astrocytes. Despite their obvious effects on the brain, their potential role in therapeutic methods remains uncertain in clinical practice. In the current chapter, a comparison of the crosstalk between these two systems, which are responsible for excitation and inhibition in neurons, is presented. The interactions are discussed at the metabolic, receptor, and transport levels. Reaction-diffusion and a convectional flow into the interstitial fluid create a balanced distribution of glycine and glutamate. Indeed, the neurons’ final physiological state is a result of a balance between the excitatory and inhibitory influences. However, changes to the glycine and/or glutamate pools under pathological conditions can alter the state of nervous tissue. Thus, new therapies for various diseases may be developed on the basis of amino acid medication.",book:{id:"10890",title:"Recent Advances in Neurochemistry",coverURL:"https://cdn.intechopen.com/books/images_new/10890.jpg"},signatures:"Yaroslav R. Nartsissov"},{id:"80821",title:"Neuroimmunology and Neurological Manifestations of COVID-19",slug:"neuroimmunology-and-neurological-manifestations-of-covid-19",totalDownloads:41,totalDimensionsCites:0,doi:"10.5772/intechopen.103026",abstract:"Infection with SARS-CoV-2 is causing coronavirus disease in 2019 (COVID-19). Besides respiratory symptoms due to an attack on the broncho-alveolar system, COVID-19, among others, can be accompanied by neurological symptoms because of the affection of the nervous system. These can be caused by intrusion by SARS-CoV-2 of the central nervous system (CNS) and peripheral nervous system (PNS) and direct infection of local cells. In addition, neurological deterioration mediated by molecular mimicry to virus antigens or bystander activation in the context of immunological anti-virus defense can lead to tissue damage in the CNS and PNS. In addition, cytokine storm caused by SARS-CoV-2 infection in COVID-19 can lead to nervous system related symptoms. Endotheliitis of CNS vessels can lead to vessel occlusion and stroke. COVID-19 can also result in cerebral hemorrhage and sinus thrombosis possibly related to changes in clotting behavior. Vaccination is most important to prevent COVID-19 in the nervous system. There are symptomatic or/and curative therapeutic approaches to combat COVID-19 related nervous system damage that are partly still under study.",book:{id:"10890",title:"Recent Advances in Neurochemistry",coverURL:"https://cdn.intechopen.com/books/images_new/10890.jpg"},signatures:"Robert Weissert"}],onlineFirstChaptersTotal:17},preDownload:{success:null,errors:{}},subscriptionForm:{success:null,errors:{}},aboutIntechopen:{},privacyPolicy:{},peerReviewing:{},howOpenAccessPublishingWithIntechopenWorks:{},sponsorshipBooks:{sponsorshipBooks:[],offset:8,limit:8,total:0},allSeries:{pteSeriesList:[],lsSeriesList:[],hsSeriesList:[],sshSeriesList:[],testimonialsList:[]},series:{item:{id:"10",title:"Physiology",doi:"10.5772/intechopen.72796",issn:"2631-8261",scope:"Modern physiology requires a comprehensive understanding of the integration of tissues and organs throughout the mammalian body, including the cooperation between structure and function at the cellular and molecular levels governed by gene and protein expression. While a daunting task, learning is facilitated by identifying common and effective signaling pathways mediated by a variety of factors employed by nature to preserve and sustain homeostatic life. \r\nAs a leading example, the cellular interaction between intracellular concentration of Ca+2 increases, and changes in plasma membrane potential is integral for coordinating blood flow, governing the exocytosis of neurotransmitters, and modulating gene expression and cell effector secretory functions. Furthermore, in this manner, understanding the systemic interaction between the cardiovascular and nervous systems has become more important than ever as human populations' life prolongation, aging and mechanisms of cellular oxidative signaling are utilised for sustaining life. \r\nAltogether, physiological research enables our identification of distinct and precise points of transition from health to the development of multimorbidity throughout the inevitable aging disorders (e.g., diabetes, hypertension, chronic kidney disease, heart failure, peptic ulcer, inflammatory bowel disease, age-related macular degeneration, cancer). With consideration of all organ systems (e.g., brain, heart, lung, gut, skeletal and smooth muscle, liver, pancreas, kidney, eye) and the interactions thereof, this Physiology Series will address the goals of resolving (1) Aging physiology and chronic disease progression (2) Examination of key cellular pathways as they relate to calcium, oxidative stress, and electrical signaling, and (3) how changes in plasma membrane produced by lipid peroxidation products can affect aging physiology, covering new research in the area of cell, human, plant and animal physiology.",coverUrl:"https://cdn.intechopen.com/series/covers/10.jpg",latestPublicationDate:"May 14th, 2022",hasOnlineFirst:!0,numberOfPublishedBooks:11,editor:{id:"35854",title:"Prof.",name:"Tomasz",middleName:null,surname:"Brzozowski",slug:"tomasz-brzozowski",fullName:"Tomasz Brzozowski",profilePictureURL:"https://mts.intechopen.com/storage/users/35854/images/system/35854.jpg",biography:"Prof. Dr. Thomas Brzozowski works as a professor of Human Physiology and is currently Chairman at the Department of Physiology and is V-Dean of the Medical Faculty at Jagiellonian University Medical College, Cracow, Poland. His primary area of interest is physiology and pathophysiology of the gastrointestinal (GI) tract, with the major focus on the mechanism of GI mucosal defense, protection, and ulcer healing. He was a postdoctoral NIH fellow at the University of California and the Gastroenterology VA Medical Center, Irvine, Long Beach, CA, USA, and at the Gastroenterology Clinics Erlangen-Nuremberg and Munster in Germany. He has published 290 original articles in some of the most prestigious scientific journals and seven book chapters on the pathophysiology of the GI tract, gastroprotection, ulcer healing, drug therapy of peptic ulcers, hormonal regulation of the gut, and inflammatory bowel disease.",institutionString:null,institution:{name:"Jagiellonian University",institutionURL:null,country:{name:"Poland"}}},editorTwo:null,editorThree:null},subseries:{paginationCount:7,paginationItems:[{id:"10",title:"Animal Physiology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/10.jpg",editor:{id:"202192",title:"Dr.",name:"Catrin",middleName:null,surname:"Rutland",slug:"catrin-rutland",fullName:"Catrin Rutland",profilePictureURL:"https://mts.intechopen.com/storage/users/202192/images/system/202192.png",biography:"Catrin Rutland is an Associate Professor of Anatomy and Developmental Genetics at the University of Nottingham, UK. She obtained a BSc from the University of Derby, England, a master’s degree from Technische Universität München, Germany, and a Ph.D. from the University of Nottingham. She undertook a post-doctoral research fellowship in the School of Medicine before accepting tenure in Veterinary Medicine and Science. Dr. Rutland also obtained an MMedSci (Medical Education) and a Postgraduate Certificate in Higher Education (PGCHE). She is the author of more than sixty peer-reviewed journal articles, twelve books/book chapters, and more than 100 research abstracts in cardiovascular biology and oncology. She is a board member of the European Association of Veterinary Anatomists, Fellow of the Anatomical Society, and Senior Fellow of the Higher Education Academy. Dr. Rutland has also written popular science books for the public. https://orcid.org/0000-0002-2009-4898. www.nottingham.ac.uk/vet/people/catrin.rutland",institutionString:null,institution:{name:"University of Nottingham",institutionURL:null,country:{name:"United Kingdom"}}},editorTwo:null,editorThree:null,editorialBoard:[{id:"306970",title:"Mr.",name:"Amin",middleName:null,surname:"Tamadon",slug:"amin-tamadon",fullName:"Amin Tamadon",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002oHR5wQAG/Profile_Picture_1623910304139",institutionString:null,institution:{name:"Bushehr University of Medical Sciences",institutionURL:null,country:{name:"Iran"}}},{id:"251314",title:"Dr.",name:"Juan Carlos",middleName:null,surname:"Gardón",slug:"juan-carlos-gardon",fullName:"Juan Carlos Gardón",profilePictureURL:"https://mts.intechopen.com/storage/users/251314/images/system/251314.jpeg",institutionString:"Catholic University of Valencia San Vicente Mártir, Spain",institution:null},{id:"245306",title:"Dr.",name:"María Luz",middleName:null,surname:"Garcia Pardo",slug:"maria-luz-garcia-pardo",fullName:"María Luz Garcia Pardo",profilePictureURL:"https://mts.intechopen.com/storage/users/245306/images/system/245306.png",institutionString:null,institution:{name:"Miguel Hernandez University",institutionURL:null,country:{name:"Spain"}}},{id:"283315",title:"Prof.",name:"Samir",middleName:null,surname:"El-Gendy",slug:"samir-el-gendy",fullName:"Samir El-Gendy",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRduYQAS/Profile_Picture_1606215849748",institutionString:null,institution:{name:"Alexandria University",institutionURL:null,country:{name:"Egypt"}}}]},{id:"11",title:"Cell Physiology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/11.jpg",editor:{id:"133493",title:"Prof.",name:"Angel",middleName:null,surname:"Catala",slug:"angel-catala",fullName:"Angel Catala",profilePictureURL:"https://mts.intechopen.com/storage/users/133493/images/3091_n.jpg",biography:"Prof. Dr. Angel Catalá \r\nShort Biography Angel Catalá was born in Rodeo (San Juan, Argentina). He studied \r\nchemistry at the Universidad Nacional de La Plata, Argentina, where received aPh.D. degree in chemistry (Biological Branch) in 1965. From\r\n1964 to 1974, he worked as Assistant in Biochemistry at the School of MedicineUniversidad Nacional de La Plata, Argentina. From 1974 to 1976, he was a Fellowof the National Institutes of Health (NIH) at the University of Connecticut, Health Center, USA. From 1985 to 2004, he served as a Full Professor oBiochemistry at the Universidad Nacional de La Plata, Argentina. He is Member ofthe National Research Council (CONICET), Argentina, and Argentine Society foBiochemistry and Molecular Biology (SAIB). His laboratory has been interested for manyears in the lipid peroxidation of biological membranes from various tissues and different species. Professor Catalá has directed twelve doctoral theses, publishedover 100 papers in peer reviewed journals, several chapters in books andtwelve edited books. Angel Catalá received awards at the 40th InternationaConference Biochemistry of Lipids 1999: Dijon (France). W inner of the Bimbo PanAmerican Nutrition, Food Science and Technology Award 2006 and 2012, South AmericaHuman Nutrition, Professional Category. 2006 award in pharmacology, Bernardo\r\nHoussay, in recognition of his meritorious works of research. Angel Catalá belongto the Editorial Board of Journal of lipids, International Review of Biophysical ChemistryFrontiers in Membrane Physiology and Biophysics, World Journal oExperimental Medicine and Biochemistry Research International, W orld Journal oBiological Chemistry, Oxidative Medicine and Cellular Longevity, Diabetes and thePancreas, International Journal of Chronic Diseases & Therapy, International Journal oNutrition, Co-Editor of The Open Biology Journal.",institutionString:null,institution:{name:"National University of La Plata",institutionURL:null,country:{name:"Argentina"}}},editorTwo:null,editorThree:null,editorialBoard:[{id:"186048",title:"Prof.",name:"Ines",middleName:null,surname:"Drenjančević",slug:"ines-drenjancevic",fullName:"Ines Drenjančević",profilePictureURL:"https://mts.intechopen.com/storage/users/186048/images/5818_n.jpg",institutionString:null,institution:{name:"University of Osijek",institutionURL:null,country:{name:"Croatia"}}},{id:"187859",title:"Prof.",name:"Kusal",middleName:"K.",surname:"Das",slug:"kusal-das",fullName:"Kusal Das",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bSBDeQAO/Profile_Picture_1623411145568",institutionString:"BLDE (Deemed to be University), India",institution:null},{id:"79615",title:"Dr.",name:"Robson",middleName:null,surname:"Faria",slug:"robson-faria",fullName:"Robson Faria",profilePictureURL:"https://mts.intechopen.com/storage/users/79615/images/system/79615.png",institutionString:null,institution:{name:"Oswaldo Cruz Foundation",institutionURL:null,country:{name:"Brazil"}}},{id:"84459",title:"Prof.",name:"Valerie",middleName:null,surname:"Chappe",slug:"valerie-chappe",fullName:"Valerie Chappe",profilePictureURL:"https://mts.intechopen.com/storage/users/84459/images/system/84459.jpg",institutionString:null,institution:{name:"Dalhousie University",institutionURL:null,country:{name:"Canada"}}}]},{id:"12",title:"Human Physiology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/12.jpg",editor:{id:"195829",title:"Prof.",name:"Kunihiro",middleName:null,surname:"Sakuma",slug:"kunihiro-sakuma",fullName:"Kunihiro Sakuma",profilePictureURL:"https://mts.intechopen.com/storage/users/195829/images/system/195829.jpg",biography:"Professor Kunihiro Sakuma, Ph.D., currently works in the Institute for Liberal Arts at the Tokyo Institute of Technology. He is a physiologist working in the field of skeletal muscle. He was awarded his sports science diploma in 1995 by the University of Tsukuba and began his scientific work at the Department of Physiology, Aichi Human Service Center, focusing on the molecular mechanism of congenital muscular dystrophy and normal muscle regeneration. His interest later turned to the molecular mechanism and attenuating strategy of sarcopenia (age-related muscle atrophy). His opinion is to attenuate sarcopenia by improving autophagic defects using nutrient- and pharmaceutical-based treatments.",institutionString:null,institution:{name:"Tokyo Institute of Technology",institutionURL:null,country:{name:"Japan"}}},editorTwo:null,editorThree:{id:"331519",title:"Dr.",name:"Kotomi",middleName:null,surname:"Sakai",slug:"kotomi-sakai",fullName:"Kotomi Sakai",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y000031QtFXQA0/Profile_Picture_1637053227318",biography:"Senior researcher Kotomi Sakai, Ph.D., MPH, works at the Research Organization of Science and Technology in Ritsumeikan University. She is a researcher in the geriatric rehabilitation and public health field. She received Ph.D. from Nihon University and MPH from St.Luke’s International University. Her main research interest is sarcopenia in older adults, especially its association with nutritional status. Additionally, to understand how to maintain and improve physical function in older adults, to conduct studies about the mechanism of sarcopenia and determine when possible interventions are needed.",institutionString:null,institution:{name:"Ritsumeikan University",institutionURL:null,country:{name:"Japan"}}},editorialBoard:[{id:"213786",title:"Dr.",name:"Henrique P.",middleName:null,surname:"Neiva",slug:"henrique-p.-neiva",fullName:"Henrique P. Neiva",profilePictureURL:"https://mts.intechopen.com/storage/users/213786/images/system/213786.png",institutionString:null,institution:{name:"University of Beira Interior",institutionURL:null,country:{name:"Portugal"}}},{id:"39275",title:"Prof.",name:"Herbert Ryan",middleName:null,surname:"Marini",slug:"herbert-ryan-marini",fullName:"Herbert Ryan Marini",profilePictureURL:"https://mts.intechopen.com/storage/users/39275/images/9459_n.jpg",institutionString:null,institution:{name:"University of Messina",institutionURL:null,country:{name:"Italy"}}},{id:"196218",title:"Dr.",name:"Pasquale",middleName:null,surname:"Cianci",slug:"pasquale-cianci",fullName:"Pasquale Cianci",profilePictureURL:"https://mts.intechopen.com/storage/users/196218/images/system/196218.png",institutionString:null,institution:{name:"University of Foggia",institutionURL:null,country:{name:"Italy"}}}]},{id:"13",title:"Plant Physiology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/13.jpg",editor:{id:"332229",title:"Prof.",name:"Jen-Tsung",middleName:null,surname:"Chen",slug:"jen-tsung-chen",fullName:"Jen-Tsung Chen",profilePictureURL:"https://mts.intechopen.com/storage/users/332229/images/system/332229.png",biography:"Dr. Jen-Tsung Chen is currently a professor at the National University of Kaohsiung, Taiwan. He teaches cell biology, genomics, proteomics, medicinal plant biotechnology, and plant tissue culture. Dr. Chen\\'s research interests include bioactive compounds, chromatography techniques, in vitro culture, medicinal plants, phytochemicals, and plant biotechnology. He has published more than ninety scientific papers and serves as an editorial board member for Plant Methods, Biomolecules, and International Journal of Molecular Sciences.",institutionString:"National University of Kaohsiung",institution:{name:"National University of Kaohsiung",institutionURL:null,country:{name:"Taiwan"}}},editorTwo:null,editorThree:null,editorialBoard:[{id:"313856",title:"Dr.",name:"Christophe",middleName:"F.E.",surname:"Hano",slug:"christophe-hano",fullName:"Christophe Hano",profilePictureURL:"https://mts.intechopen.com/storage/users/313856/images/system/313856.png",institutionString:"University of Orléans",institution:{name:"University of Orléans",institutionURL:null,country:{name:"France"}}},{id:"33993",title:"Dr.",name:"Jose Carlos",middleName:null,surname:"Jimenez-Lopez",slug:"jose-carlos-jimenez-lopez",fullName:"Jose Carlos Jimenez-Lopez",profilePictureURL:"https://mts.intechopen.com/storage/users/33993/images/system/33993.jpg",institutionString:"Spanish National Research Council",institution:{name:"Spanish National Research Council",institutionURL:null,country:{name:"Spain"}}},{id:"191770",title:"Dr.",name:"Mohamed A.",middleName:null,surname:"El-Esawi",slug:"mohamed-a.-el-esawi",fullName:"Mohamed A. 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Radiotherapy and Nuclear Medicine Technology has always been my aspiration and my life. As years passed I accumulated a tremendous amount of skills and knowledge in Radiotherapy and Nuclear Medicine, Conventional Radiology, Radiation Protection, Bioinformatics Technology, PACS, Image processing, clinically and lecturing that will enable me to provide a valuable service to the community as a Researcher and Consultant in this field. My method of translating this into day to day in clinical practice is non-exhaustible and my habit of exchanging knowledge and expertise with others in those fields is the code and secret of success.",institutionString:null,institution:{name:"Majmaah University",country:{name:"Saudi Arabia"}}},{id:"313277",title:"Dr.",name:"Bartłomiej",middleName:null,surname:"Płaczek",slug:"bartlomiej-placzek",fullName:"Bartłomiej Płaczek",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/313277/images/system/313277.jpg",biography:"Bartłomiej Płaczek, MSc (2002), Ph.D. (2005), Habilitation (2016), is a professor at the University of Silesia, Institute of Computer Science, Poland, and an expert from the National Centre for Research and Development. His research interests include sensor networks, smart sensors, intelligent systems, and image processing with applications in healthcare and medicine. He is the author or co-author of more than seventy papers in peer-reviewed journals and conferences as well as the co-author of several books. He serves as a reviewer for many scientific journals, international conferences, and research foundations. Since 2010, Dr. Placzek has been a reviewer of grants and projects (including EU projects) in the field of information technologies.",institutionString:"University of Silesia",institution:{name:"University of Silesia",country:{name:"Poland"}}},{id:"35000",title:"Prof.",name:"Ulrich H.P",middleName:"H.P.",surname:"Fischer",slug:"ulrich-h.p-fischer",fullName:"Ulrich H.P Fischer",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/35000/images/3052_n.jpg",biography:"Academic and Professional Background\nUlrich H. P. has Diploma and PhD degrees in Physics from the Free University Berlin, Germany. He has been working on research positions in the Heinrich-Hertz-Institute in Germany. Several international research projects has been performed with European partners from France, Netherlands, Norway and the UK. He is currently Professor of Communications Systems at the Harz University of Applied Sciences, Germany.\n\nPublications and Publishing\nHe has edited one book, a special interest book about ‘Optoelectronic Packaging’ (VDE, Berlin, Germany), and has published over 100 papers and is owner of several international patents for WDM over POF key elements.\n\nKey Research and Consulting Interests\nUlrich’s research activity has always been related to Spectroscopy and Optical Communications Technology. Specific current interests include the validation of complex instruments, and the application of VR technology to the development and testing of measurement systems. He has been reviewer for several publications of the Optical Society of America\\'s including Photonics Technology Letters and Applied Optics.\n\nPersonal Interests\nThese include motor cycling in a very relaxed manner and performing martial arts.",institutionString:null,institution:{name:"Charité",country:{name:"Germany"}}},{id:"341622",title:"Ph.D.",name:"Eduardo",middleName:null,surname:"Rojas Alvarez",slug:"eduardo-rojas-alvarez",fullName:"Eduardo Rojas Alvarez",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/341622/images/15892_n.jpg",biography:null,institutionString:null,institution:{name:"University of Cuenca",country:{name:"Ecuador"}}},{id:"215610",title:"Prof.",name:"Muhammad",middleName:null,surname:"Sarfraz",slug:"muhammad-sarfraz",fullName:"Muhammad Sarfraz",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/215610/images/system/215610.jpeg",biography:"Muhammad Sarfraz is a professor in the Department of Information Science, Kuwait University, Kuwait. His research interests include optimization, computer graphics, computer vision, image processing, machine learning, pattern recognition, soft computing, data science, and intelligent systems. Prof. Sarfraz has been a keynote/invited speaker at various platforms around the globe. He has advised/supervised more than 110 students for their MSc and Ph.D. theses. He has published more than 400 publications as books, journal articles, and conference papers. He has authored and/or edited around seventy books. Prof. Sarfraz is a member of various professional societies. He is a chair and member of international advisory committees and organizing committees of numerous international conferences. He is also an editor and editor in chief for various international journals.",institutionString:"Kuwait University",institution:{name:"Kuwait University",country:{name:"Kuwait"}}},{id:"32650",title:"Prof.",name:"Lukas",middleName:"Willem",surname:"Snyman",slug:"lukas-snyman",fullName:"Lukas Snyman",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/32650/images/4136_n.jpg",biography:"Lukas Willem Snyman received his basic education at primary and high schools in South Africa, Eastern Cape. He enrolled at today's Nelson Metropolitan University and graduated from this university with a BSc in Physics and Mathematics, B.Sc Honors in Physics, MSc in Semiconductor Physics, and a Ph.D. in Semiconductor Physics in 1987. After his studies, he chose an academic career and devoted his energy to the teaching of physics to first, second, and third-year students. After positions as a lecturer at the University of Port Elizabeth, he accepted a position as Associate Professor at the University of Pretoria, South Africa.\r\n\r\nIn 1992, he motivates the concept of 'television and computer-based education” as means to reach large student numbers with only the best of teaching expertise and publishes an article on the concept in the SA Journal of Higher Education of 1993 (and later in 2003). The University of Pretoria subsequently approved a series of test projects on the concept with outreach to Mamelodi and Eerste Rust in 1993. In 1994, the University established a 'Unit for Telematic Education ' as a support section for multiple faculties at the University of Pretoria. In subsequent years, the concept of 'telematic education” subsequently becomes well established in academic circles in South Africa, grew in popularity, and is adopted by many universities and colleges throughout South Africa as a medium of enhancing education and training, as a method to reaching out to far out communities, and as a means to enhance study from the home environment.\r\n\r\nProfessor Snyman in subsequent years pursued research in semiconductor physics, semiconductor devices, microelectronics, and optoelectronics.\r\n\r\nIn 2000 he joined the TUT as a full professor. Here served for a period as head of the Department of Electronic Engineering. Here he makes contributions to solar energy development, microwave and optoelectronic device development, silicon photonics, as well as contributions to new mobile telecommunication systems and network planning in SA.\r\n\r\nCurrently, he teaches electronics and telecommunications at the TUT to audiences ranging from first-year students to Ph.D. level.\r\n\r\nFor his research in the field of 'Silicon Photonics” since 1990, he has published (as author and co-author) about thirty internationally reviewed articles in scientific journals, contributed to more than forty international conferences, about 25 South African provisional patents (as inventor and co-inventor), 8 PCT international patent applications until now. Of these, two USA patents applications, two European Patents, two Korean patents, and ten SA patents have been granted. A further 4 USA patents, 5 European patents, 3 Korean patents, 3 Chinese patents, and 3 Japanese patents are currently under consideration.\r\n\r\nRecently he has also published an extensive scholarly chapter in an internet open access book on 'Integrating Microphotonic Systems and MOEMS into standard Silicon CMOS Integrated circuitry”.\r\n\r\nFurthermore, Professor Snyman recently steered a new initiative at the TUT by introducing a 'Laboratory for Innovative Electronic Systems ' at the Department of Electrical Engineering. The model of this laboratory or center is to primarily combine outputs as achieved by high-level research with lower-level system development and entrepreneurship in a technical university environment. Students are allocated to projects at different levels with PhDs and Master students allocated to the generation of new knowledge and new technologies, while students at the diploma and Baccalaureus level are allocated to electronic systems development with a direct and a near application for application in industry or the commercial and public sectors in South Africa.\r\n\r\nProfessor Snyman received the WIRSAM Award of 1983 and the WIRSAM Award in 1985 in South Africa for best research papers by a young scientist at two international conferences on electron microscopy in South Africa. He subsequently received the SA Microelectronics Award for the best dissertation emanating from studies executed at a South African university in the field of Physics and Microelectronics in South Africa in 1987. In October of 2011, Professor Snyman received the prestigious Institutional Award for 'Innovator of the Year” for 2010 at the Tshwane University of Technology, South Africa. This award was based on the number of patents recognized and granted by local and international institutions as well as for his contributions concerning innovation at the TUT.",institutionString:null,institution:{name:"University of South Africa",country:{name:"South Africa"}}},{id:"317279",title:"Mr.",name:"Ali",middleName:"Usama",surname:"Syed",slug:"ali-syed",fullName:"Ali Syed",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/317279/images/16024_n.png",biography:"A creative, talented, and innovative young professional who is dedicated, well organized, and capable research fellow with two years of experience in graduate-level research, published in engineering journals and book, with related expertise in Bio-robotics, equally passionate about the aesthetics of the mechanical and electronic system, obtained expertise in the use of MS Office, MATLAB, SolidWorks, LabVIEW, Proteus, Fusion 360, having a grasp on python, C++ and assembly language, possess proven ability in acquiring research grants, previous appointments with social and educational societies with experience in administration, current affiliations with IEEE and Web of Science, a confident presenter at conferences and teacher in classrooms, able to explain complex information to audiences of all levels.",institutionString:null,institution:{name:"Air University",country:{name:"Pakistan"}}},{id:"75526",title:"Ph.D.",name:"Zihni Onur",middleName:null,surname:"Uygun",slug:"zihni-onur-uygun",fullName:"Zihni Onur Uygun",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/75526/images/12_n.jpg",biography:"My undergraduate education and my Master of Science educations at Ege University and at Çanakkale Onsekiz Mart University have given me a firm foundation in Biochemistry, Analytical Chemistry, Biosensors, Bioelectronics, Physical Chemistry and Medicine. After obtaining my degree as a MSc in analytical chemistry, I started working as a research assistant in Ege University Medical Faculty in 2014. In parallel, I enrolled to the MSc program at the Department of Medical Biochemistry at Ege University to gain deeper knowledge on medical and biochemical sciences as well as clinical chemistry in 2014. In my PhD I deeply researched on biosensors and bioelectronics and finished in 2020. Now I have eleven SCI-Expanded Index published papers, 6 international book chapters, referee assignments for different SCIE journals, one international patent pending, several international awards, projects and bursaries. In parallel to my research assistant position at Ege University Medical Faculty, Department of Medical Biochemistry, in April 2016, I also founded a Start-Up Company (Denosens Biotechnology LTD) by the support of The Scientific and Technological Research Council of Turkey. Currently, I am also working as a CEO in Denosens Biotechnology. The main purposes of the company, which carries out R&D as a research center, are to develop new generation biosensors and sensors for both point-of-care diagnostics; such as glucose, lactate, cholesterol and cancer biomarker detections. My specific experimental and instrumental skills are Biochemistry, Biosensor, Analytical Chemistry, Electrochemistry, Mobile phone based point-of-care diagnostic device, POCTs and Patient interface designs, HPLC, Tandem Mass Spectrometry, Spectrophotometry, ELISA.",institutionString:null,institution:{name:"Ege University",country:{name:"Turkey"}}},{id:"246502",title:"Dr.",name:"Jaya T.",middleName:"T",surname:"Varkey",slug:"jaya-t.-varkey",fullName:"Jaya T. Varkey",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/246502/images/11160_n.jpg",biography:"Jaya T. Varkey, PhD, graduated with a degree in Chemistry from Cochin University of Science and Technology, Kerala, India. She obtained a PhD in Chemistry from the School of Chemical Sciences, Mahatma Gandhi University, Kerala, India, and completed a post-doctoral fellowship at the University of Minnesota, USA. She is a research guide at Mahatma Gandhi University and Associate Professor in Chemistry, St. Teresa’s College, Kochi, Kerala, India.\nDr. Varkey received a National Young Scientist award from the Indian Science Congress (1995), a UGC Research award (2016–2018), an Indian National Science Academy (INSA) Visiting Scientist award (2018–2019), and a Best Innovative Faculty award from the All India Association for Christian Higher Education (AIACHE) (2019). She Hashas received the Sr. Mary Cecil prize for best research paper three times. She was also awarded a start-up to develop a tea bag water filter. \nDr. Varkey has published two international books and twenty-seven international journal publications. She is an editorial board member for five international journals.",institutionString:"St. Teresa’s College",institution:null},{id:"250668",title:"Dr.",name:"Ali",middleName:null,surname:"Nabipour Chakoli",slug:"ali-nabipour-chakoli",fullName:"Ali Nabipour Chakoli",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/250668/images/system/250668.jpg",biography:"Academic Qualification:\r\n•\tPhD in Materials Physics and Chemistry, From: Sep. 2006, to: Sep. 2010, School of Materials Science and Engineering, Harbin Institute of Technology, Thesis: Structure and Shape Memory Effect of Functionalized MWCNTs/poly (L-lactide-co-ε-caprolactone) Nanocomposites. Supervisor: Prof. Wei Cai,\r\n•\tM.Sc in Applied Physics, From: 1996, to: 1998, Faculty of Physics & Nuclear Science, Amirkabir Uni. of Technology, Tehran, Iran, Thesis: Determination of Boron in Micro alloy Steels with solid state nuclear track detectors by neutron induced auto radiography, Supervisors: Dr. M. Hosseini Ashrafi and Dr. A. Hosseini.\r\n•\tB.Sc. in Applied Physics, From: 1991, to: 1996, Faculty of Physics & Nuclear Science, Amirkabir Uni. of Technology, Tehran, Iran, Thesis: Design of shielding for Am-Be neutron sources for In Vivo neutron activation analysis, Supervisor: Dr. M. Hosseini Ashrafi.\r\n\r\nResearch Experiences:\r\n1.\tNanomaterials, Carbon Nanotubes, Graphene: Synthesis, Functionalization and Characterization,\r\n2.\tMWCNTs/Polymer Composites: Fabrication and Characterization, \r\n3.\tShape Memory Polymers, Biodegradable Polymers, ORC, Collagen,\r\n4.\tMaterials Analysis and Characterizations: TEM, SEM, XPS, FT-IR, Raman, DSC, DMA, TGA, XRD, GPC, Fluoroscopy, \r\n5.\tInteraction of Radiation with Mater, Nuclear Safety and Security, NDT(RT),\r\n6.\tRadiation Detectors, Calibration (SSDL),\r\n7.\tCompleted IAEA e-learning Courses:\r\nNuclear Security (15 Modules),\r\nNuclear Safety:\r\nTSA 2: Regulatory Protection in Occupational Exposure,\r\nTips & Tricks: Radiation Protection in Radiography,\r\nSafety and Quality in Radiotherapy,\r\nCourse on Sealed Radioactive Sources,\r\nCourse on Fundamentals of Environmental Remediation,\r\nCourse on Planning for Environmental Remediation,\r\nKnowledge Management Orientation Course,\r\nFood Irradiation - Technology, Applications and Good Practices,\r\nEmployment:\r\nFrom 2010 to now: Academic staff, Nuclear Science and Technology Research Institute, Kargar Shomali, Tehran, Iran, P.O. Box: 14395-836.\r\nFrom 1997 to 2006: Expert of Materials Analysis and Characterization. Research Center of Agriculture and Medicine. Rajaeeshahr, Karaj, Iran, P. O. Box: 31585-498.",institutionString:"Atomic Energy Organization of Iran",institution:{name:"Atomic Energy Organization of Iran",country:{name:"Iran"}}},{id:"248279",title:"Dr.",name:"Monika",middleName:"Elzbieta",surname:"Machoy",slug:"monika-machoy",fullName:"Monika Machoy",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/248279/images/system/248279.jpeg",biography:"Monika Elżbieta Machoy, MD, graduated with distinction from the Faculty of Medicine and Dentistry at the Pomeranian Medical University in 2009, defended her PhD thesis with summa cum laude in 2016 and is currently employed as a researcher at the Department of Orthodontics of the Pomeranian Medical University. She expanded her professional knowledge during a one-year scholarship program at the Ernst Moritz Arndt University in Greifswald, Germany and during a three-year internship at the Technical University in Dresden, Germany. She has been a speaker at numerous orthodontic conferences, among others, American Association of Orthodontics, European Orthodontic Symposium and numerous conferences of the Polish Orthodontic Society. She conducts research focusing on the effect of orthodontic treatment on dental and periodontal tissues and the causes of pain in orthodontic patients.",institutionString:"Pomeranian Medical University",institution:{name:"Pomeranian Medical University",country:{name:"Poland"}}},{id:"252743",title:"Prof.",name:"Aswini",middleName:"Kumar",surname:"Kar",slug:"aswini-kar",fullName:"Aswini Kar",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/252743/images/10381_n.jpg",biography:"uploaded in cv",institutionString:null,institution:{name:"KIIT University",country:{name:"India"}}},{id:"204256",title:"Dr.",name:"Anil",middleName:"Kumar",surname:"Kumar Sahu",slug:"anil-kumar-sahu",fullName:"Anil Kumar Sahu",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/204256/images/14201_n.jpg",biography:"I have nearly 11 years of research and teaching experience. I have done my master degree from University Institute of Pharmacy, Pt. Ravi Shankar Shukla University, Raipur, Chhattisgarh India. I have published 16 review and research articles in international and national journals and published 4 chapters in IntechOpen, the world’s leading publisher of Open access books. I have presented many papers at national and international conferences. I have received research award from Indian Drug Manufacturers Association in year 2015. My research interest extends from novel lymphatic drug delivery systems, oral delivery system for herbal bioactive to formulation optimization.",institutionString:null,institution:{name:"Chhattisgarh Swami Vivekanand Technical University",country:{name:"India"}}},{id:"253468",title:"Dr.",name:"Mariusz",middleName:null,surname:"Marzec",slug:"mariusz-marzec",fullName:"Mariusz Marzec",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/253468/images/system/253468.png",biography:"An assistant professor at Department of Biomedical Computer Systems, at Institute of Computer Science, Silesian University in Katowice. Scientific interests: computer analysis and processing of images, biomedical images, databases and programming languages. He is an author and co-author of scientific publications covering analysis and processing of biomedical images and development of database systems.",institutionString:"University of Silesia",institution:null},{id:"212432",title:"Prof.",name:"Hadi",middleName:null,surname:"Mohammadi",slug:"hadi-mohammadi",fullName:"Hadi Mohammadi",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/212432/images/system/212432.jpeg",biography:"Dr. Hadi Mohammadi is a biomedical engineer with hands-on experience in the design and development of many engineering structures and medical devices through various projects that he has been involved in over the past twenty years. Dr. Mohammadi received his BSc. and MSc. degrees in Mechanical Engineering from Sharif University of Technology, Tehran, Iran, and his PhD. degree in Biomedical Engineering (biomaterials) from the University of Western Ontario. He was a postdoctoral trainee for almost four years at University of Calgary and Harvard Medical School. He is an industry innovator having created the technology to produce lifelike synthetic platforms that can be used for the simulation of almost all cardiovascular reconstructive surgeries. He’s been heavily involved in the design and development of cardiovascular devices and technology for the past 10 years. He is currently an Assistant Professor with the University of British Colombia, Canada.",institutionString:"University of British Columbia",institution:{name:"University of British Columbia",country:{name:"Canada"}}},{id:"254463",title:"Prof.",name:"Haisheng",middleName:null,surname:"Yang",slug:"haisheng-yang",fullName:"Haisheng Yang",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/254463/images/system/254463.jpeg",biography:"Haisheng Yang, Ph.D., Professor and Director of the Department of Biomedical Engineering, College of Life Science and Bioengineering, Beijing University of Technology. He received his Ph.D. degree in Mechanics/Biomechanics from Harbin Institute of Technology (jointly with University of California, Berkeley). Afterwards, he worked as a Postdoctoral Research Associate in the Purdue Musculoskeletal Biology and Mechanics Lab at the Department of Basic Medical Sciences, Purdue University, USA. He also conducted research in the Research Centre of Shriners Hospitals for Children-Canada at McGill University, Canada. Dr. Yang has over 10 years research experience in orthopaedic biomechanics and mechanobiology of bone adaptation and regeneration. He earned an award from Beijing Overseas Talents Aggregation program in 2017 and serves as Beijing Distinguished Professor.",institutionString:"Beijing University of Technology",institution:null},{id:"255757",title:"Dr.",name:"Igor",middleName:"Victorovich",surname:"Lakhno",slug:"igor-lakhno",fullName:"Igor Lakhno",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/255757/images/system/255757.jpg",biography:"Lakhno Igor Victorovich was born in 1971 in Kharkiv (Ukraine). \nMD – 1994, Kharkiv National Medical Univesity.\nOb&Gyn; – 1997, master courses in Kharkiv Medical Academy of Postgraduate Education.\nPhD – 1999, Kharkiv National Medical Univesity.\nDSc – 2019, PL Shupik National Academy of Postgraduate Education \nLakhno Igor has been graduated from an international training courses on reproductive medicine and family planning held in Debrecen University (Hungary) in 1997. Since 1998 Lakhno Igor has worked as an associate professor of the department of obstetrics and gynecology of VN Karazin National University and an associate professor of the perinatology, obstetrics and gynecology department of Kharkiv Medical Academy of Postgraduate Education. Since June 2019 he’s a professor of the department of obstetrics and gynecology of VN Karazin National University and a professor of the perinatology, obstetrics and gynecology department of Kharkiv Medical Academy of Postgraduate Education . He’s an author of about 200 printed works and there are 17 of them in Scopus or Web of Science databases. Lakhno Igor is a rewiever of Journal of Obstetrics and Gynaecology (Taylor and Francis), Informatics in Medicine Unlocked (Elsevier), The Journal of Obstetrics and Gynecology Research (Wiley), Endocrine, Metabolic & Immune Disorders-Drug Targets (Bentham Open), The Open Biomedical Engineering Journal (Bentham Open), etc. He’s defended a dissertation for DSc degree \\'Pre-eclampsia: prediction, prevention and treatment”. Lakhno Igor has participated as a speaker in several international conferences and congresses (International Conference on Biological Oscillations April 10th-14th 2016, Lancaster, UK, The 9th conference of the European Study Group on Cardiovascular Oscillations). His main scientific interests: obstetrics, women’s health, fetal medicine, cardiovascular medicine.",institutionString:"V.N. Karazin Kharkiv National University",institution:{name:"Kharkiv Medical Academy of Postgraduate Education",country:{name:"Ukraine"}}},{id:"89721",title:"Dr.",name:"Mehmet",middleName:"Cuneyt",surname:"Ozmen",slug:"mehmet-ozmen",fullName:"Mehmet Ozmen",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/89721/images/7289_n.jpg",biography:null,institutionString:null,institution:{name:"Gazi University",country:{name:"Turkey"}}},{id:"243698",title:"M.D.",name:"Xiaogang",middleName:null,surname:"Wang",slug:"xiaogang-wang",fullName:"Xiaogang Wang",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/243698/images/system/243698.png",biography:"Dr. Xiaogang Wang, a faculty member of Shanxi Eye Hospital specializing in the treatment of cataract and retinal disease and a tutor for postgraduate students of Shanxi Medical University, worked in the COOL Lab as an international visiting scholar under the supervision of Dr. David Huang and Yali Jia from October 2012 through November 2013. Dr. Wang earned an MD from Shanxi Medical University and a Ph.D. from Shanghai Jiao Tong University. Dr. Wang was awarded two research project grants focused on multimodal optical coherence tomography imaging and deep learning in cataract and retinal disease, from the National Natural Science Foundation of China. He has published around 30 peer-reviewed journal papers and four book chapters and co-edited one book.",institutionString:"Shanxi Eye Hospital",institution:{name:"Shanxi Eye Hospital",country:{name:"China"}}},{id:"242893",title:"Ph.D. Student",name:"Joaquim",middleName:null,surname:"De Moura",slug:"joaquim-de-moura",fullName:"Joaquim De Moura",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/242893/images/7133_n.jpg",biography:"Joaquim de Moura received his degree in Computer Engineering in 2014 from the University of A Coruña (Spain). In 2016, he received his M.Sc degree in Computer Engineering from the same university. He is currently pursuing his Ph.D degree in Computer Science in a collaborative project between ophthalmology centers in Galicia and the University of A Coruña. His research interests include computer vision, machine learning algorithms and analysis and medical imaging processing of various kinds.",institutionString:null,institution:{name:"University of A Coruña",country:{name:"Spain"}}},{id:"267434",title:"Dr.",name:"Rohit",middleName:null,surname:"Raja",slug:"rohit-raja",fullName:"Rohit Raja",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRZkkQAG/Profile_Picture_2022-05-09T12:55:18.jpg",biography:null,institutionString:null,institution:null},{id:"294334",title:"B.Sc.",name:"Marc",middleName:null,surname:"Bruggeman",slug:"marc-bruggeman",fullName:"Marc Bruggeman",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/294334/images/8242_n.jpg",biography:"Chemical engineer graduate, with a passion for material science and specific interest in polymers - their near infinite applications intrigue me. \n\nI plan to continue my scientific career in the field of polymeric biomaterials as I am fascinated by intelligent, bioactive and biomimetic materials for use in both consumer and medical applications.",institutionString:null,institution:null},{id:"244950",title:"Dr.",name:"Salvatore",middleName:null,surname:"Di Lauro",slug:"salvatore-di-lauro",fullName:"Salvatore Di Lauro",position:null,profilePictureURL:"https://intech-files.s3.amazonaws.com/0030O00002bSF1HQAW/ProfilePicture%202021-12-20%2014%3A54%3A14.482",biography:"Name:\n\tSALVATORE DI LAURO\nAddress:\n\tHospital Clínico Universitario Valladolid\nAvda Ramón y Cajal 3\n47005, Valladolid\nSpain\nPhone number: \nFax\nE-mail:\n\t+34 983420000 ext 292\n+34 983420084\nsadilauro@live.it\nDate and place of Birth:\nID Number\nMedical Licence \nLanguages\t09-05-1985. Villaricca (Italy)\n\nY1281863H\n474707061\nItalian (native language)\nSpanish (read, written, spoken)\nEnglish (read, written, spoken)\nPortuguese (read, spoken)\nFrench (read)\n\t\t\nCurrent position (title and company)\tDate (Year)\nVitreo-Retinal consultant in ophthalmology. Hospital Clinico Universitario Valladolid. Sacyl. National Health System.\nVitreo-Retinal consultant in ophthalmology. Instituto Oftalmologico Recoletas. Red Hospitalaria Recoletas. Private practise.\t2017-today\n\n2019-today\n\t\n\t\nEducation (High school, university and postgraduate training > 3 months)\tDate (Year)\nDegree in Medicine and Surgery. University of Neaples 'Federico II”\nResident in Opthalmology. Hospital Clinico Universitario Valladolid\nMaster in Vitreo-Retina. IOBA. University of Valladolid\nFellow of the European Board of Ophthalmology. Paris\nMaster in Research in Ophthalmology. University of Valladolid\t2003-2009\n2012-2016\n2016-2017\n2016\n2012-2013\n\t\nEmployments (company and positions)\tDate (Year)\nResident in Ophthalmology. Hospital Clinico Universitario Valladolid. Sacyl.\nFellow in Vitreo-Retina. IOBA. University of Valladolid\nVitreo-Retinal consultant in ophthalmology. Hospital Clinico Universitario Valladolid. Sacyl. National Health System.\nVitreo-Retinal consultant in ophthalmology. Instituto Oftalmologico Recoletas. Red Hospitalaria Recoletas. \n\t2012-2016\n2016-2017\n2017-today\n\n2019-Today\n\n\n\t\nClinical Research Experience (tasks and role)\tDate (Year)\nAssociated investigator\n\n' FIS PI20/00740: DESARROLLO DE UNA CALCULADORA DE RIESGO DE\nAPARICION DE RETINOPATIA DIABETICA BASADA EN TECNICAS DE IMAGEN MULTIMODAL EN PACIENTES DIABETICOS TIPO 1. Grant by: Ministerio de Ciencia e Innovacion \n\n' (BIO/VA23/14) Estudio clínico multicéntrico y prospectivo para validar dos\nbiomarcadores ubicados en los genes p53 y MDM2 en la predicción de los resultados funcionales de la cirugía del desprendimiento de retina regmatógeno. Grant by: Gerencia Regional de Salud de la Junta de Castilla y León.\n' Estudio multicéntrico, aleatorizado, con enmascaramiento doble, en 2 grupos\nparalelos y de 52 semanas de duración para comparar la eficacia, seguridad e inmunogenicidad de SOK583A1 respecto a Eylea® en pacientes con degeneración macular neovascular asociada a la edad' (CSOK583A12301; N.EUDRA: 2019-004838-41; FASE III). Grant by Hexal AG\n\n' Estudio de fase III, aleatorizado, doble ciego, con grupos paralelos, multicéntrico para comparar la eficacia y la seguridad de QL1205 frente a Lucentis® en pacientes con degeneración macular neovascular asociada a la edad. (EUDRACT: 2018-004486-13). Grant by Qilu Pharmaceutical Co\n\n' Estudio NEUTON: Ensayo clinico en fase IV para evaluar la eficacia de aflibercept en pacientes Naive con Edema MacUlar secundario a Oclusion de Vena CenTral de la Retina (OVCR) en regimen de tratamientO iNdividualizado Treat and Extend (TAE)”, (2014-000975-21). Grant by Fundacion Retinaplus\n\n' Evaluación de la seguridad y bioactividad de anillos de tensión capsular en conejo. Proyecto Procusens. Grant by AJL, S.A.\n\n'Estudio epidemiológico, prospectivo, multicéntrico y abierto\\npara valorar la frecuencia de la conjuntivitis adenovírica diagnosticada mediante el test AdenoPlus®\\nTest en pacientes enfermos de conjuntivitis aguda”\\n. National, multicenter study. Grant by: NICOX.\n\nEuropean multicentric trial: 'Evaluation of clinical outcomes following the use of Systane Hydration in patients with dry eye”. Study Phase 4. Grant by: Alcon Labs'\n\nVLPs Injection and Activation in a Rabbit Model of Uveal Melanoma. Grant by Aura Bioscience\n\nUpdating and characterization of a rabbit model of uveal melanoma. Grant by Aura Bioscience\n\nEnsayo clínico en fase IV para evaluar las variantes genéticas de la vía del VEGF como biomarcadores de eficacia del tratamiento con aflibercept en pacientes con degeneración macular asociada a la edad (DMAE) neovascular. Estudio BIOIMAGE. IMO-AFLI-2013-01\n\nEstudio In-Eye:Ensayo clínico en fase IV, abierto, aleatorizado, de 2 brazos,\nmulticçentrico y de 12 meses de duración, para evaluar la eficacia y seguridad de un régimen de PRN flexible individualizado de 'esperar y extender' versus un régimen PRN según criterios de estabilización mediante evaluaciones mensuales de inyecciones intravítreas de ranibizumab 0,5 mg en pacientes naive con neovascularización coriodea secunaria a la degeneración macular relacionada con la edad. CP: CRFB002AES03T\n\nTREND: Estudio Fase IIIb multicéntrico, randomizado, de 12 meses de\nseguimiento con evaluador de la agudeza visual enmascarado, para evaluar la eficacia y la seguridad de ranibizumab 0.5mg en un régimen de tratar y extender comparado con un régimen mensual, en pacientes con degeneración macular neovascular asociada a la edad. CP: CRFB002A2411 Código Eudra CT:\n2013-002626-23\n\n\n\nPublications\t\n\n2021\n\n\n\n\n2015\n\n\n\n\n2021\n\n\n\n\n\n2021\n\n\n\n\n2015\n\n\n\n\n2015\n\n\n2014\n\n\n\n\n2015-16\n\n\n\n2015\n\n\n2014\n\n\n2014\n\n\n\n\n2014\n\n\n\n\n\n\n\n2014\n\nJose Carlos Pastor; Jimena Rojas; Salvador Pastor-Idoate; Salvatore Di Lauro; Lucia Gonzalez-Buendia; Santiago Delgado-Tirado. Proliferative vitreoretinopathy: A new concept of disease pathogenesis and practical\nconsequences. Progress in Retinal and Eye Research. 51, pp. 125 - 155. 03/2016. DOI: 10.1016/j.preteyeres.2015.07.005\n\n\nLabrador-Velandia S; Alonso-Alonso ML; Di Lauro S; García-Gutierrez MT; Srivastava GK; Pastor JC; Fernandez-Bueno I. Mesenchymal stem cells provide paracrine neuroprotective resources that delay degeneration of co-cultured organotypic neuroretinal cultures.Experimental Eye Research. 185, 17/05/2019. DOI: 10.1016/j.exer.2019.05.011\n\nSalvatore Di Lauro; Maria Teresa Garcia Gutierrez; Ivan Fernandez Bueno. Quantification of pigment epithelium-derived factor (PEDF) in an ex vivo coculture of retinal pigment epithelium cells and neuroretina.\nJournal of Allbiosolution. 2019. ISSN 2605-3535\n\nSonia Labrador Velandia; Salvatore Di Lauro; Alonso-Alonso ML; Tabera Bartolomé S; Srivastava GK; Pastor JC; Fernandez-Bueno I. Biocompatibility of intravitreal injection of human mesenchymal stem cells in immunocompetent rabbits. Graefe's archive for clinical and experimental ophthalmology. 256 - 1, pp. 125 - 134. 01/2018. DOI: 10.1007/s00417-017-3842-3\n\n\nSalvatore Di Lauro, David Rodriguez-Crespo, Manuel J Gayoso, Maria T Garcia-Gutierrez, J Carlos Pastor, Girish K Srivastava, Ivan Fernandez-Bueno. A novel coculture model of porcine central neuroretina explants and retinal pigment epithelium cells. Molecular Vision. 2016 - 22, pp. 243 - 253. 01/2016.\n\nSalvatore Di Lauro. Classifications for Proliferative Vitreoretinopathy ({PVR}): An Analysis of Their Use in Publications over the Last 15 Years. Journal of Ophthalmology. 2016, pp. 1 - 6. 01/2016. DOI: 10.1155/2016/7807596\n\nSalvatore Di Lauro; Rosa Maria Coco; Rosa Maria Sanabria; Enrique Rodriguez de la Rua; Jose Carlos Pastor. Loss of Visual Acuity after Successful Surgery for Macula-On Rhegmatogenous Retinal Detachment in a Prospective Multicentre Study. Journal of Ophthalmology. 2015:821864, 2015. DOI: 10.1155/2015/821864\n\nIvan Fernandez-Bueno; Salvatore Di Lauro; Ivan Alvarez; Jose Carlos Lopez; Maria Teresa Garcia-Gutierrez; Itziar Fernandez; Eva Larra; Jose Carlos Pastor. Safety and Biocompatibility of a New High-Density Polyethylene-Based\nSpherical Integrated Porous Orbital Implant: An Experimental Study in Rabbits. Journal of Ophthalmology. 2015:904096, 2015. DOI: 10.1155/2015/904096\n\nPastor JC; Pastor-Idoate S; Rodríguez-Hernandez I; Rojas J; Fernandez I; Gonzalez-Buendia L; Di Lauro S; Gonzalez-Sarmiento R. Genetics of PVR and RD. Ophthalmologica. 232 - Suppl 1, pp. 28 - 29. 2014\n\nRodriguez-Crespo D; Di Lauro S; Singh AK; Garcia-Gutierrez MT; Garrosa M; Pastor JC; Fernandez-Bueno I; Srivastava GK. Triple-layered mixed co-culture model of RPE cells with neuroretina for evaluating the neuroprotective effects of adipose-MSCs. Cell Tissue Res. 358 - 3, pp. 705 - 716. 2014.\nDOI: 10.1007/s00441-014-1987-5\n\nCarlo De Werra; Salvatore Condurro; Salvatore Tramontano; Mario Perone; Ivana Donzelli; Salvatore Di Lauro; Massimo Di Giuseppe; Rosa Di Micco; Annalisa Pascariello; Antonio Pastore; Giorgio Diamantis; Giuseppe Galloro. Hydatid disease of the liver: thirty years of surgical experience.Chirurgia italiana. 59 - 5, pp. 611 - 636.\n(Italia): 2007. ISSN 0009-4773\n\nChapters in books\n\t\n' Salvador Pastor Idoate; Salvatore Di Lauro; Jose Carlos Pastor Jimeno. PVR: Pathogenesis, Histopathology and Classification. Proliferative Vitreoretinopathy with Small Gauge Vitrectomy. Springer, 2018. ISBN 978-3-319-78445-8\nDOI: 10.1007/978-3-319-78446-5_2. \n\n' Salvatore Di Lauro; Maria Isabel Lopez Galvez. Quistes vítreos en una mujer joven. Problemas diagnósticos en patología retinocoroidea. Sociedad Española de Retina-Vitreo. 2018.\n\n' Salvatore Di Lauro; Salvador Pastor Idoate; Jose Carlos Pastor Jimeno. iOCT in PVR management. OCT Applications in Opthalmology. pp. 1 - 8. INTECH, 2018. DOI: 10.5772/intechopen.78774.\n\n' Rosa Coco Martin; Salvatore Di Lauro; Salvador Pastor Idoate; Jose Carlos Pastor. amponadores, manipuladores y tinciones en la cirugía del traumatismo ocular.Trauma Ocular. Ponencia de la SEO 2018..\n\n' LOPEZ GALVEZ; DI LAURO; CRESPO. OCT angiografia y complicaciones retinianas de la diabetes. PONENCIA SEO 2021, CAPITULO 20. (España): 2021.\n\n' Múltiples desprendimientos neurosensoriales bilaterales en paciente joven. Enfermedades Degenerativas De Retina Y Coroides. SERV 04/2016. \n' González-Buendía L; Di Lauro S; Pastor-Idoate S; Pastor Jimeno JC. Vitreorretinopatía proliferante (VRP) e inflamación: LA INFLAMACIÓN in «INMUNOMODULADORES Y ANTIINFLAMATORIOS: MÁS ALLÁ DE LOS CORTICOIDES. 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