Dmitry Milovzorov

Dmitry E. Milovzorov was born in 1963 in Russia. He graduated from secondary school with a gold medal. In 1980, he started his education at the Moscow State University, and in 1986 received his Master\'s Degree in Physics. In 1993, he received his Ph.D. in Vacuum and Plasma Electronics, and in 2014, he received the Doctor of Science Degree in physics of semiconductors. His thesis is devoted to the nanocrystals of silicon and thin crystalline film technology. During 2000-2001, Dmitry was the Associate Professor at the Moscow Power Engineering Technical University. He has more than 120 publications from 1987 to 2018. He is currently an expert in nanotechnology with the Ministry of Education and Science of the Russian Federation. Also, he is the Main Leading Scientist at Ryazan Radioengineering State University. The author’s major field of study is thin semiconductor film preparation and characterization. He is also an expert in quantum mechanical effects in nanotechnology, nanomaterials, point defects and bonds inside silicon, surface states and defect state characterization by laser spectroscopy. In 1995, Dmitry joined the pre-research meeting of JRDC (Japan Science and Technology Corporation of Japanese Government), and in 1997 he was awarded the STA fellowship of JISTEC (Japan). During 2000, he worked at the Moscow State University as a senior scientist. In 2009, he was awarded the gold medal from the Russian Government in nanocrystalline silicon technology for solar cell manufacturing. He has also proposed more than 15 patents in the USSR, the Russian Federation and the Republic of South Korea. His papers are deposited now by Departments of Defence of several states such as the USA and Germany. Dmitry E. Milovzorov is a member of the Electrochemical Society of America and an SPIE member.