In the present study, porous silicon films were prepared on N- and P-type silicon wafer (100) crystallographic orientations. We have investigated the influence of the different anodization parameters and silicon wafers on the properties of the obtained porous silicon layer such as thickness and porosity. The reflectance measurement of the prepared samples has presented reduction of reflection due to the porous layers and suggests the antireflective character of the realized porous layer.
Part of the book: Applications of Silicon Photonics in Sensors and Waveguides