The high-quality InN epifilms and InN microdisks have been grown with InGaN buffer layers at low temperatures by plasma-assisted molecular beam epitaxy. The samples were analyzed using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence. The characteristics of the InN epifilms and InN microdisks were studied, and the role of InGaN buffer was evaluated.
Part of the book: Modern Technologies for Creating the Thin-film Systems and Coatings
The high-quality GaN microdisks with InGaN/GaN quantum wells (QWs) and InN microdisks were grown on γ-LiAlO2 substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The samples were analysed using scanning electron microscopy, X-ray diffraction, photoluminescence, cathodoluminescence and high-resolution transmission electron microscope. The characteristics of the GaN microdisks and InN microdisks were studied and the effect of growth temperature was evaluated.
Part of the book: Epitaxy