Surface roughness of as-deposited and annealed at optimal temperature Al-based contacts.
\\n\\n
IntechOpen was founded by scientists, for scientists, in order to make book publishing accessible around the globe. Over the last two decades, this has driven Open Access (OA) book publishing whilst levelling the playing field for global academics. Through our innovative publishing model and the support of the research community, we have now published over 5,700 Open Access books and are visited online by over three million academics every month. These researchers are increasingly working in broad technology-based subjects, driving multidisciplinary academic endeavours into human health, environment, and technology.
\\n\\nBy listening to our community, and in order to serve these rapidly growing areas which lie at the core of IntechOpen's expertise, we are launching a portfolio of Open Science journals:
\\n\\nAll three journals will publish under an Open Access model and embrace Open Science policies to help support the changing needs of academics in these fast-moving research areas. There will be direct links to preprint servers and data repositories, allowing full reproducibility and rapid dissemination of published papers to help accelerate the pace of research. Each journal has renowned Editors in Chief who will work alongside a global Editorial Board, delivering robust single-blind peer review. Supported by our internal editorial teams, this will ensure our authors will receive a quick, user-friendly, and personalised publishing experience.
\\n\\n"By launching our journals portfolio we are introducing new, dedicated homes for interdisciplinary technology-focused researchers to publish their work, whilst embracing Open Science and creating a unique global home for academics to disseminate their work. We are taking a leap toward Open Science continuing and expanding our fundamental commitment to openly sharing scientific research across the world, making it available for the benefit of all." Dr. Sara Uhac, IntechOpen CEO
\\n\\n"Our aim is to promote and create better science for a better world by increasing access to information and the latest scientific developments to all scientists, innovators, entrepreneurs and students and give them the opportunity to learn, observe and contribute to knowledge creation. Open Science promotes a swifter path from research to innovation to produce new products and services." Alex Lazinica, IntechOpen founder
\\n\\nIn conclusion, Natalia Reinic Babic, Head of Journal Publishing and Open Science at IntechOpen adds:
\\n\\n“On behalf of the journal team I’d like to thank all our Editors in Chief, Editorial Boards, internal supporting teams, and our scientific community for their continuous support in making this portfolio a reality - we couldn’t have done it without you! With your support in place, we are confident these journals will become as impactful and successful as our book publishing program and bring us closer to a more open (science) future.”
\\n\\nWe invite you to visit the journals homepage and learn more about the journal’s Editorial Boards, scope and vision as all three journals are now open for submissions.
\\n\\nFeel free to share this news on social media and help us mark this memorable moment!
\\n\\n\\n"}]',published:!0,mainMedia:{caption:"",originalUrl:"/media/original/237"}},components:[{type:"htmlEditorComponent",content:'
After years of being acknowledged as the world's leading publisher of Open Access books, today, we are proud to announce we’ve successfully launched a portfolio of Open Science journals covering rapidly expanding areas of interdisciplinary research.
\n\n\n\nIntechOpen was founded by scientists, for scientists, in order to make book publishing accessible around the globe. Over the last two decades, this has driven Open Access (OA) book publishing whilst levelling the playing field for global academics. Through our innovative publishing model and the support of the research community, we have now published over 5,700 Open Access books and are visited online by over three million academics every month. These researchers are increasingly working in broad technology-based subjects, driving multidisciplinary academic endeavours into human health, environment, and technology.
\n\nBy listening to our community, and in order to serve these rapidly growing areas which lie at the core of IntechOpen's expertise, we are launching a portfolio of Open Science journals:
\n\nAll three journals will publish under an Open Access model and embrace Open Science policies to help support the changing needs of academics in these fast-moving research areas. There will be direct links to preprint servers and data repositories, allowing full reproducibility and rapid dissemination of published papers to help accelerate the pace of research. Each journal has renowned Editors in Chief who will work alongside a global Editorial Board, delivering robust single-blind peer review. Supported by our internal editorial teams, this will ensure our authors will receive a quick, user-friendly, and personalised publishing experience.
\n\n"By launching our journals portfolio we are introducing new, dedicated homes for interdisciplinary technology-focused researchers to publish their work, whilst embracing Open Science and creating a unique global home for academics to disseminate their work. We are taking a leap toward Open Science continuing and expanding our fundamental commitment to openly sharing scientific research across the world, making it available for the benefit of all." Dr. Sara Uhac, IntechOpen CEO
\n\n"Our aim is to promote and create better science for a better world by increasing access to information and the latest scientific developments to all scientists, innovators, entrepreneurs and students and give them the opportunity to learn, observe and contribute to knowledge creation. Open Science promotes a swifter path from research to innovation to produce new products and services." Alex Lazinica, IntechOpen founder
\n\nIn conclusion, Natalia Reinic Babic, Head of Journal Publishing and Open Science at IntechOpen adds:
\n\n“On behalf of the journal team I’d like to thank all our Editors in Chief, Editorial Boards, internal supporting teams, and our scientific community for their continuous support in making this portfolio a reality - we couldn’t have done it without you! With your support in place, we are confident these journals will become as impactful and successful as our book publishing program and bring us closer to a more open (science) future.”
\n\nWe invite you to visit the journals homepage and learn more about the journal’s Editorial Boards, scope and vision as all three journals are now open for submissions.
\n\nFeel free to share this news on social media and help us mark this memorable moment!
\n\n\n'}],latestNews:[{slug:"webinar-introduction-to-open-science-wednesday-18-may-1-pm-cest-20220518",title:"Webinar: Introduction to Open Science | Wednesday 18 May, 1 PM CEST"},{slug:"step-in-the-right-direction-intechopen-launches-a-portfolio-of-open-science-journals-20220414",title:"Step in the Right Direction: IntechOpen Launches a Portfolio of Open Science Journals"},{slug:"let-s-meet-at-london-book-fair-5-7-april-2022-olympia-london-20220321",title:"Let’s meet at London Book Fair, 5-7 April 2022, Olympia London"},{slug:"50-books-published-as-part-of-intechopen-and-knowledge-unlatched-ku-collaboration-20220316",title:"50 Books published as part of IntechOpen and Knowledge Unlatched (KU) Collaboration"},{slug:"intechopen-joins-the-united-nations-sustainable-development-goals-publishers-compact-20221702",title:"IntechOpen joins the United Nations Sustainable Development Goals Publishers Compact"},{slug:"intechopen-signs-exclusive-representation-agreement-with-lsr-libros-servicios-y-representaciones-s-a-de-c-v-20211123",title:"IntechOpen Signs Exclusive Representation Agreement with LSR Libros Servicios y Representaciones S.A. de C.V"},{slug:"intechopen-expands-partnership-with-research4life-20211110",title:"IntechOpen Expands Partnership with Research4Life"},{slug:"introducing-intechopen-book-series-a-new-publishing-format-for-oa-books-20210915",title:"Introducing IntechOpen Book Series - A New Publishing Format for OA Books"}]},book:{item:{type:"book",id:"8502",leadTitle:null,fullTitle:"Plant Science - Structure, Anatomy and Physiology in Plants Cultured in Vivo and in Vitro",title:"Plant Science",subtitle:"Structure, Anatomy and Physiology in Plants Cultured in Vivo and in Vitro",reviewType:"peer-reviewed",abstract:"Over seven chapters, this book helps readers to integrate knowledge of plant anatomy, physiology, and morphogenesis as well as consider the conditions of the different environments to which plants are exposed. It highlights the importance of knowledge of the anatomy of plant tissues for different applications. In addition to the variety of physiological studies presented here, the book also emphasizes anatomical studies in botanical quality control of medicinal herbs with human health benefits. It is reflected in this book that studies on plant structure have greatly benefited from the new approaches and techniques available today.",isbn:"978-1-78984-747-5",printIsbn:"978-1-78984-746-8",pdfIsbn:"978-1-78985-562-3",doi:"10.5772/intechopen.78878",price:119,priceEur:129,priceUsd:155,slug:"plant-science-structure-anatomy-and-physiology-in-plants-cultured-in-vivo-and-in-vitro",numberOfPages:120,isOpenForSubmission:!1,isInWos:null,isInBkci:!1,hash:"13ca4ffde7bd7a7ce518358e1ac56c6e",bookSignature:"Ana Gonzalez, María Rodriguez and Nihal Gören Sağlam",publishedDate:"May 13th 2020",coverURL:"https://cdn.intechopen.com/books/images_new/8502.jpg",numberOfDownloads:8728,numberOfWosCitations:3,numberOfCrossrefCitations:10,numberOfCrossrefCitationsByBook:0,numberOfDimensionsCitations:18,numberOfDimensionsCitationsByBook:0,hasAltmetrics:1,numberOfTotalCitations:31,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"November 13th 2018",dateEndSecondStepPublish:"March 12th 2019",dateEndThirdStepPublish:"May 11th 2019",dateEndFourthStepPublish:"July 30th 2019",dateEndFifthStepPublish:"September 28th 2019",currentStepOfPublishingProcess:5,indexedIn:"1,2,3,4,5,6",editedByType:"Edited by",kuFlag:!1,featuredMarkup:null,editors:[{id:"281854",title:"Dr.",name:"Ana Maria",middleName:null,surname:"Gonzalez",slug:"ana-maria-gonzalez",fullName:"Ana Maria Gonzalez",profilePictureURL:"https://mts.intechopen.com/storage/users/281854/images/system/281854.png",biography:"Ana Maria Gonzalez is the director of the Northeast Botanical Institute (IBONE), where she is a National Scientific and Technical Research Council (CONICET) researcher. She is also in charge of the IBONE's Plant Anatomy Area. Her teaching career includes being a Professor of Vascular Plant Morphology, Faculty of Agriculture, Universidad Nacional del Nordeste, Corrientes, Argentina, and Professor of Biology, Universidad Nacional del Chaco Austral, Saenz Peña, Chaco, Argentina. She is a postgraduate lecturer in master\\'s and doctoral courses in the Faculty of Agricultural Sciences, where she teaches numerous courses on anatomy, histological techniques, and bioimaging. Dr. Gonzalez has published 88 articles and more than 160 abstracts presented at national and international congresses.",institutionString:null,position:null,outsideEditionCount:null,totalCites:0,totalAuthoredChapters:"1",totalChapterViews:"0",totalEditedBooks:"2",institution:{name:"National University of the Northeast",institutionURL:null,country:{name:"Argentina"}}}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,coeditorOne:{id:"117985",title:"Dr.",name:"María",middleName:"Victoria",surname:"Rodriguez",slug:"maria-rodriguez",fullName:"María Rodriguez",profilePictureURL:"https://mts.intechopen.com/storage/users/117985/images/system/117985.jpg",biography:"María Victoria Rodriguez currently works at the Facultad de Ciencias Bioquímicas y Farmaceúticas (FBIOYF), Rosario National University. She is an assistant researcher at the Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) of Argentina. She is an adjunct professor of Pharmacobotany for Pharmaceuticals students and Cell Differentiation and Structure of Vascular Plants for bachelor students in Biotechnology. Dr. Rodriguez has presented more than sixty works at scientific-technological events and has twenty-eight publications on topics related to plant anatomy, pest biocontrol, bioinformatics, and botany (medicinal plants). Dr. Rodriguez has twenty-five postgraduate courses and/or trainings on the subjects of her specialization. She is a reviewer of international journals and book chapters related to plant anatomy, medicinal plants, and biocontrol.",institutionString:"Universidad Nacional de Rosario",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"1",totalChapterViews:"0",totalEditedBooks:"0",institution:{name:"National University of Rosario",institutionURL:null,country:{name:"Argentina"}}},coeditorTwo:{id:"235232",title:"Dr.",name:"Nihal",middleName:null,surname:"Gören Sağlam",slug:"nihal-goren-saglam",fullName:"Nihal Gören Sağlam",profilePictureURL:"https://mts.intechopen.com/storage/users/206317/images/system/206317.jfif",biography:"Nihal Gören Sağlam has obtained her Bsc degree (1995-2000), Msc degree (2001-2004) and PhD (2004-2009) at Istanbul University Department of Biology (Plant Physiology). From 2002 till 2009 she has been Research Assistant at Istanbul University, Department of Botany. From 2010 till 2011 she was a Post-Doctoral researcher (Warwick University, School of Life Sciences, UK). From 2009 she has been Research Assistant Dr. at Istanbul University Department of Botany. Her research experience/interests are: Plant Physiology, Senescence hormon interactions, Stress senescence interactions, Microarray, gene expression, Protein-DNA interactions (Yeast-1-Hybrid), Confocal microscopy\r\n\r\nShe has had following International Training:\r\n1. Post-Doctoral Researcher (2010-2011)– School of Life Sciences, Warwick University, UK, (Tubitak Grant)\r\n2.Academic Visitor (2008, 6 months)- Warwick HRI, UK\r\n3.“Molecular Aspects of Salt and Drought Tolerance in Crops (Plants)” 2007, University of Cairo, Giza, Egypt (ICGEB Grant)\r\n4. Academic Visitor (2006, 3 months)- Warwick HRI, UK",institutionString:"Istanbul University",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"0",totalChapterViews:"0",totalEditedBooks:"0",institution:{name:"Istanbul University",institutionURL:null,country:{name:"Turkey"}}},coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"41",title:"Plant Biology",slug:"agricultural-and-biological-sciences-plant-biology"}],chapters:[{id:"68924",title:"Phloem: Cell Types, Structure, and Commercial Uses",doi:"10.5772/intechopen.88162",slug:"phloem-cell-types-structure-and-commercial-uses",totalDownloads:1622,totalCrossrefCites:0,totalDimensionsCites:3,hasAltmetrics:1,abstract:"Phloem is the vascular tissue in charge of transport and distribution of the organic nutrients. The phloem is also a pathway to signaling molecules and has a structural function in the plant body. It is typically composed of three cell types: sieve elements, parenchyma, and sclerenchyma. The sieve elements have the main function of transport and typically have lost their nuclei and other organelles in the course of their specialization. Hence, the sieve elements rely on specialized neighboring parenchyma cells to sustain all of their physiological function and activities. All cell types of the phloem may vary morphologically and in their distribution in the tissue, and this diversity is taxonomic and functionally informative. The phloem can be of primary or secondary origin, being derived from either procambium or cambium, respectively. Some vascular plant lineages have exclusive primary phloem, such as the lycophytes, ferns, and the monocotyledons, and the sieve elements will be long living in these taxa. In plants with secondary growth, the secondary phloem is formed, and typically the primary phloem collapses. Because new secondary phloem is constantly formed, the longevity of sieve elements in the secondary plant body is much more reduced. In this chapter, the structure of the phloem and its cell types are described in detail and also some of the known commercial uses of this tissue.",signatures:"Marcelo R. Pace",downloadPdfUrl:"/chapter/pdf-download/68924",previewPdfUrl:"/chapter/pdf-preview/68924",authors:[{id:"286705",title:"Dr.",name:"Marcelo",surname:"Pace",slug:"marcelo-pace",fullName:"Marcelo Pace"}],corrections:null},{id:"65075",title:"Phytohormone-Mediated Homeostasis of Root System Architecture",doi:"10.5772/intechopen.82866",slug:"phytohormone-mediated-homeostasis-of-root-system-architecture",totalDownloads:648,totalCrossrefCites:2,totalDimensionsCites:2,hasAltmetrics:1,abstract:"Unlike animals, most of the plants are sessile. This may be a reason why they developed the powerful ability of organ generation throughout their lifetime, which is distinct from the animals, whose generation potential is restricted in a certain period during development. Half part of the plant body, the root system, is hidden under the ground, where there is a competition of resources, for example, water and nutrients or biotic stresses and abiotic stresses surrounding the root system. With its strong regeneration ability, the architecture of the root system is shaped by all of these environmental cues together with the internal developmental signals. In this process, phytohormones work as the regulatory molecules mediating the internal and external developmental signals, thus controlling the morphology and function of the root system architecture. This chapter introduces the development of root system regulated by various phytohormones, like auxin, cytokinin, etc.",signatures:"Dongyang Xu and Masaaki K. Watahiki",downloadPdfUrl:"/chapter/pdf-download/65075",previewPdfUrl:"/chapter/pdf-preview/65075",authors:[{id:"279724",title:"Associate Prof.",name:"Masaaki",surname:"Watahiki",slug:"masaaki-watahiki",fullName:"Masaaki Watahiki"},{id:"279725",title:"Dr.",name:"Dongyang",surname:"Xu",slug:"dongyang-xu",fullName:"Dongyang Xu"}],corrections:null},{id:"65082",title:"Cross Talk among Phytohormone Signal and Carbohydrate Metabolism Involving Regenerable Calli Induction under Osmotic Treatment",doi:"10.5772/intechopen.83556",slug:"cross-talk-among-phytohormone-signal-and-carbohydrate-metabolism-involving-regenerable-calli-inducti",totalDownloads:594,totalCrossrefCites:1,totalDimensionsCites:1,hasAltmetrics:0,abstract:"Nonregenerable calli (NRC) derived from immature seeds of japonica rice were inoculated on MS medium containing 10 μM 2,4-D (MSD10). They turned to highly regenerable calli (HRC) when sorbitol was supplemented into the medium. Meanwhile, high levels of endogenous IAA and ABA were accumulated in HRC. Exogenous IAA precursor and ABA in MSD10 have the same effect to enhance regeneration ability. However, there are only partial effects if IAA precursor or ABA was supplemented, respectively. The regeneration ability is prominently decreased from 75% to 25% while an auxin transport inhibitor, 2,3,5-triiodobenzoic acid, was included in the medium. It suggested that endogenous auxin signal and ABA may involve in the induction of HRC. Furthermore, it showed higher contents of glucose, sucrose, and starch and higher expression levels of wall-bound invertase 1, sucrose transporter 1 (OsSUT1), and OsSUT2 genes in HRC than in NRC. The expression levels of PIN-formed 1 and LEA1 were also consistent with the trend of carbohydrate metabolisms. We thus concluded a flowchart for HRC induction by osmotic stress. According to the hypothesis, osmotic stress may regulate endogenous levels of auxin interacting with ABA, then affect carbohydrate metabolism to trigger callus initiation and further shoot regeneration in rice.",signatures:"Hsiang-Ting Lee and Wen-Lii Huang",downloadPdfUrl:"/chapter/pdf-download/65082",previewPdfUrl:"/chapter/pdf-preview/65082",authors:[{id:"275518",title:"Prof.",name:"Wen-Lii",surname:"Huang",slug:"wen-lii-huang",fullName:"Wen-Lii Huang"},{id:"287882",title:"Mr.",name:"Hsiang-Ting",surname:"Lee",slug:"hsiang-ting-lee",fullName:"Hsiang-Ting Lee"}],corrections:null},{id:"65965",title:"Jasmonates: An Emerging Approach in Biotic and Abiotic Stress Tolerance",doi:"10.5772/intechopen.84608",slug:"jasmonates-an-emerging-approach-in-biotic-and-abiotic-stress-tolerance",totalDownloads:556,totalCrossrefCites:1,totalDimensionsCites:1,hasAltmetrics:0,abstract:"Plant hormones acts as key signaling compounds in plant stress responses and development under biotic and abiotic stresses. The potential roles of phytohormones had been considered so far and copious investigation is going on in finding the impending role of phytohormones in abiotic and biotic stresses. In the list of known classical plant hormones, Jasmonates, [jasmonic acid and its methyl ester (methyl Jasmonates)] have been recently added and shown as potential tool in enhancing tolerance of plants against various physiological processes. These are oxidized lipids (oxylipins) mainly derived from α-linolenic acids (α-LAs), play an active role in senescence through signaling, flower nectar secretion, Gprotein signaling, physiological activities and development in plants. Exogenous application of jasmonates on different plant parts have proved effective in improving plant abiotic stress tolerance particularly salinity, drought, and temperature (low/high) conditions and also in biotic stress tolerance like pathogen attack or wounding by production of defensive secondary metabolites, through the stimulation of phenyl-propanoid metabolism resulted from accumulation of JA in plant cells or tissues. Based on this prolific role of Jasmonates and its derivatives in different fields of biological sciences these phytohormones have opened new vistas and increasing interest in future Agricultural, Biotechnological and Physiological researches.",signatures:"Shivani Lalotra, Akhouri Hemantaranjan, Bhudeo Rana Yashu, Rupanshee Srivastava and Sandeep Kumar",downloadPdfUrl:"/chapter/pdf-download/65965",previewPdfUrl:"/chapter/pdf-preview/65965",authors:[{id:"270428",title:"Ms.",name:"Shivani",surname:"Lalotra",slug:"shivani-lalotra",fullName:"Shivani Lalotra"},{id:"291718",title:"Prof.",name:"A.",surname:"Hemantaranjan",slug:"a.-hemantaranjan",fullName:"A. Hemantaranjan"},{id:"291719",title:"Mr.",name:"Bhudeo",surname:"Rana Yashu",slug:"bhudeo-rana-yashu",fullName:"Bhudeo Rana Yashu"},{id:"291722",title:"Ms.",name:"Rupanshee",surname:"Srivastava",slug:"rupanshee-srivastava",fullName:"Rupanshee Srivastava"},{id:"291724",title:"Mr.",name:"Sandeep",surname:"Kumar",slug:"sandeep-kumar",fullName:"Sandeep Kumar"}],corrections:null},{id:"70467",title:"A Regulatory Circuit Integrating Stress-Induced with Natural Leaf Senescence",doi:"10.5772/intechopen.89498",slug:"a-regulatory-circuit-integrating-stress-induced-with-natural-leaf-senescence",totalDownloads:738,totalCrossrefCites:0,totalDimensionsCites:1,hasAltmetrics:0,abstract:"Any condition that disrupts the ER homeostasis activates a cytoprotective signaling cascade, designated as the unfolded protein response (UPR), which is transduced in plant cells by a bipartite signaling module. Activation of IRE1/bZIP60 and bZIP28/bZIP17, which represent the bipartite signaling arms and serve as ER stress sensors and transducers, results in the upregulation of ER protein processing machinery-related genes to recover from stress. However, if the ER stress persists and the cell is unable to restore ER homeostasis, programmed cell death signaling pathways are activated for survival. Here, we describe an ER stress-induced plant-specific cell death program, which is a shared response to multiple stress signals. This signaling pathway was first identified through genome-wide expression profile of differentially expressed genes in response to combined ER stress and osmotic stress. Among them, the development and cell death domain-containing N-rich proteins (DCD/NRPs), NRP-A and NRP-B, and the transcriptional factor GmNAC81 were selected as mediators of cell death in plants. These genes were used as targets to identify additional components of the cell death pathway, which is described here as a regulatory circuit that integrates a stress-induced cell death program with leaf senescence via the NRP-A/NRP-B/GmNAC81:GmNAC30/VPE signaling module.",signatures:"Otto Teixeira Fraga, Bruno Paes de Melo, Luiz Fernando de Camargos, Debora Pellanda Fagundes, Celio Cabral Oliveira, Eduardo Bassi Simoni, Pedro Augusto Braga dos Reis and Elizabeth Pacheco Batista Fontes",downloadPdfUrl:"/chapter/pdf-download/70467",previewPdfUrl:"/chapter/pdf-preview/70467",authors:[{id:"21426",title:"Prof.",name:"Elizabeth",surname:"Fontes",slug:"elizabeth-fontes",fullName:"Elizabeth Fontes"}],corrections:null},{id:"71539",title:"Leaf Senescence in Wheat: A Drought Tolerance Measure",doi:"10.5772/intechopen.89500",slug:"leaf-senescence-in-wheat-a-drought-tolerance-measure",totalDownloads:511,totalCrossrefCites:0,totalDimensionsCites:0,hasAltmetrics:0,abstract:"The present study was conducted on the experimental site of INRAA, unit research of Setif. A set of 10 genotypes of durum wheat (Triticum durum Desf.) planted during four cropping seasons (2009–2013). The objectives of this study are to evaluate the performance of some durum wheat genotypes and tested the efficiency of using senescence parameters in screening under semi-arid conditions. The analysis of variance demonstrates significant effects of genotypes and years on the grain yield and senescence parameters. Based on the means comparison, the values of total mean grain yield (2009–2013) varied from 37.84 q/ha for Oued Zenati to 44.7 q/ha for Altar84 with general mean of 42.71 q/ha. The mean rankings based on the mean grain yield demonstrate that the genotypes Mexicali75, Hoggar, and Sooty have the best ranking with highest grain yield. The mean values over years of Sa% varied between 47.91% for the genotype Oued Zenati and 59.45% for Waha. The genotypes with highest values for the parameter mid-senescence (Σ50s) are the most tolerant and adapted genotypes.",signatures:"Hafsi Miloud and Guendouz Ali",downloadPdfUrl:"/chapter/pdf-download/71539",previewPdfUrl:"/chapter/pdf-preview/71539",authors:[{id:"99819",title:"Dr.",name:"Ali",surname:"Guendouz",slug:"ali-guendouz",fullName:"Ali Guendouz"},{id:"307654",title:"Prof.",name:"Miloud",surname:"Hafsi",slug:"miloud-hafsi",fullName:"Miloud Hafsi"}],corrections:null},{id:"66996",title:"Ethiopian Common Medicinal Plants: Their Parts and Uses in Traditional Medicine - Ecology and Quality Control",doi:"10.5772/intechopen.86202",slug:"ethiopian-common-medicinal-plants-their-parts-and-uses-in-traditional-medicine-ecology-and-quality-c",totalDownloads:4060,totalCrossrefCites:6,totalDimensionsCites:10,hasAltmetrics:1,abstract:"The main purpose of this review is to document medicinal plants used for traditional treatments with their parts, use, ecology, and quality control. Accordingly, 80 medicinal plant species were reviewed; leaves and roots are the main parts of the plants used for preparation of traditional medicines. The local practitioners provided various traditional medications to their patients’ diseases such as stomachaches, asthma, dysentery, malaria, evil eyes, cancer, skin diseases, and headaches. The uses of medicinal plants for human and animal treatments are practiced from time immemorial. Stream/riverbanks, cultivated lands, disturbed sites, bushlands, forested areas and their margins, woodlands, grasslands, and home gardens are major habitats of medicinal plants. Generally, medicinal plants used for traditional medicine play a significant role in the healthcare of the majority of the people in Ethiopia. The major threats to medicinal plants are habitat destruction, urbanization, agricultural expansion, investment, road construction, and deforestation. Because of these, medicinal plants are being declined and lost with their habitats. Community- and research-based conservation mechanisms could be an appropriate approach for mitigating the problems pertinent to the loss of medicinal plants and their habitats and for documenting medicinal plants. Chromatography; electrophoretic, macroscopic, and microscopic techniques; and pharmaceutical practice are mainly used for quality control of herbal medicines.",signatures:"Admasu Moges and Yohannes Moges",downloadPdfUrl:"/chapter/pdf-download/66996",previewPdfUrl:"/chapter/pdf-preview/66996",authors:[{id:"249746",title:"Ph.D.",name:"Admasu",surname:"Moges",slug:"admasu-moges",fullName:"Admasu Moges"},{id:"297761",title:"MSc.",name:"Yohannes",surname:"Moges",slug:"yohannes-moges",fullName:"Yohannes Moges"}],corrections:null}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},subseries:null,tags:null},relatedBooks:[{type:"book",id:"10772",title:"Parasitic Plants",subtitle:null,isOpenForSubmission:!1,hash:"31abd439b5674c91d18ad77dbc52500f",slug:"parasitic-plants",bookSignature:"Ana Maria Gonzalez and Héctor Arnaldo Sato",coverURL:"https://cdn.intechopen.com/books/images_new/10772.jpg",editedByType:"Edited by",editors:[{id:"281854",title:"Dr.",name:"Ana Maria",surname:"Gonzalez",slug:"ana-maria-gonzalez",fullName:"Ana Maria Gonzalez"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"6277",title:"Physical Methods for Stimulation of Plant and Mushroom Development",subtitle:null,isOpenForSubmission:!1,hash:"33dff71e3489403e273057ae36bd0dbd",slug:"physical-methods-for-stimulation-of-plant-and-mushroom-development",bookSignature:"Mohamed El-Esawi",coverURL:"https://cdn.intechopen.com/books/images_new/6277.jpg",editedByType:"Edited by",editors:[{id:"191770",title:"Dr.",name:"Mohamed A.",surname:"El-Esawi",slug:"mohamed-a.-el-esawi",fullName:"Mohamed A. 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The PID (Proportional Integral Differential) algorithm is the most popular feedback controller used within the process industries. It has been successfully used for over 50 years. It is a robust easily understood algorithm that can provide excellent control performance despite the varied dynamic characteristics of process plant. It is designed to generate an output that causes some corrective effort to be applied to a process so as to drive a measurable process variable towards a desired value, known as the set point. The concept is based (as shown in Figure 1) on the re-input of the system own output according to certain laws (hence the name “feedback”). It is desired for the system output to follow the set point. All feedback controllers determine their output by observing the difference, called error, between the set point and the actual process variable measurement. The PID looks at (a) the current value of the error, (b) the integral of the error over a recent time interval, and (c) the current derivative of the error signal to determine not only how much of a correction to apply, but for how long. Each of those three quantities are multiplied by a (tuning constant) and added together. Thus the PID output is a weighted sum. Depending on the application one may want a faster convergence speed or a lower overshoot. By adjusting the weighting constants, Kp, Ki, and Kd, the PID is set to give the most desired performance.
Typical closed loop control system.
As a result of enormous development in microcomputer technology, analog controllers have been replaced by digital controllers either in small or large industry. It is now a common practice to implement PID controllers in its digital version, which means that they operate in discrete time domain and deal with analog signals quantized in a limited number of levels. The trend toward digital rather than analog control is mainly due to: (1) versatility where programs can be easily modified or completely changed, (2) sophistication where advanced control laws could be implemented, (3) cost effectiveness where microcontrollers are available at very low costs compared to PLCs, industrial computers, RTUs or DCS. A typical digital feedback control system is shown in Figure 2. In digital feedback systems, the controller input and output are digital (sampled) rather than continuous signals. Thus, the continuous signal from the measurement device (sensor/transmitter) is sampled and converted periodically to a digital signal by an analog-to-digital converter (ADC). A digital control algorithm is then used to calculate the controller output as a digital signal. Because most final control elements are analog devices, the digital output signal is usually converted to a corresponding analog signal by a digital-to-analog converter (DAC).
Digital closed loop based on a microcontroller.
In feedback control, the objective is to reduce the error signal to zero where
where
The three-term PID controller.
where
A straightforward way of deriving a digital version of the parallel form of the PID controller is to replace the integral and derivative terms by finite difference approximations,
where
There are two alternative forms of the digital PID control equation, the position form and the velocity form. Substituting Eqs. (3) and (4) into (2) gives the
where
In the
Note that the summation still begins at
In this study, velocity form is chosen because of the following advantages:
It does not need initialization. The position form requires the initial value of the controller output
It is protected against integral windup. The integral mode of a controller causes its output to continue changing as long as there is a nonzero error. Often the errors cannot be eliminated quickly enough and given enough time they produce larger and larger values for the integral term, which in turn keeps increasing the control action until it is “saturated” (e.g., the valve completely opens or closes). This condition is called
It protects the process against computer failure. With the velocity algorithm one can send out a signal which is used to drive an integrating amplifier or a stepper motor. These devices will retain the last calculated position of the control valve (or other final control element) in case the computer fails, thus avoiding total loss of control of the process.
As mentioned earlier, the implementation is based on a Microchip PIC18F452 microcontroller, where the controller plays the role of the brain of the control system [5]. The right choice of the microcontroller is essential, as it will be the core of the final design. The PIC18F452 from Microchip has been chosen for the following advantages:
Speed: with its maximum internal clock rate of 20 MHz and its 16-bit-wide instruction bus, the CPU can execute most of its instructions at a single machine cycle of four clocks which is equivalent to a 0.2 μs.
Math support: unlike classical microprocessors, the controller in hand has got a hardware multiplier and divider for multiple-bytes, fixed-point numbers and for floating-point numbers so multiplication is carried out in a single instruction.
Flexible timer resources: four independent timers modules support timing measurements and output interval control with a timing resolution as fine as 0.1 μs. Those timers could be used to produce up to three pulse width modulations which could be used for electrical motor control.
Free software tools: Microchip’s Development Package MPLAB® (consisting of assembler, simulator, and user interface) as well as all manuals and application notes are available at no cost from their Web site (www.microchip.com).
Development tool versatility: it supports in-circuit debugger which permits the loading and execution of a user program as well as the use of breakpoints, memory/ register modification, and single stepping.
Build-in ADCs: it has analogue-to-digital converters with 10 bits resolution.
Built-in serial peripheral interface: it has a variety of serial bus interfaces like USART, I2C & SPI.
C programmable: it could be programmed using C language with the use of a variety of built in C libraries developed by microchip.
The PIC18F452 microcontroller is a 40 or 44-pin depending on the package, where in the 40 pins configuration, a dual inline package is used; whereas in the 44 pins configuration, either thin quad flat package or dual flat no leads package is used. Its design is based on Harvard technology where the program and data have different buses. This type of microcontrollers is very cheap, small in size, and could be customized. It could be easily programmed on-line using either assembly language, BASIC or C language. In fact, it is ideal for small application such as the one in hand. The controller has a 24 kbytes of flash memory and 2048 bytes of SDRAM. It also has a 8 × 10 bits analog to digital channels. It also has 5 bidirectional digital ports with 33 inputs/outputs, configured as follows: 3 × 8 digital I/O ports (PORTB, PORTC and PORTD), one six digital I/O port (PORTA) and one three digital I/O port (PORTE). Unfortunately, one of the drawbacks of microcontrollers, it is very seldom to find one with a digital to analog converter. Luckily, they are few manufacturers around including microchip, which make serial DACs which could be programmed through Serial Port Interface (SPI) using only three wires. The PIC18F452 has four timer/counters which could be programmed either as 8 or 16 bit timers/counters. It also has two ports which could be configured either as capture, compare or pulse width modulation (PWM). It has two serial peripheral interfaces: (SPI) and an inter-integrated circuit (I2C). An asynchronous port (USART) is also provided. For the microcontroller to output analogue data, an MCP4921 device is used. The device is a 12-bit buffered single voltage output Digital-to-Analog Converter (DAC). The device operates from a single 2.7 V to 5.5 V supply with an SPI compatible Serial Peripheral Interface. The user can configure the full-scale range of the device to be VREF or 2*VREF by setting the gain selection option bit (gain of 1 of 2). The user can shut down the device by setting the Configuration Register bit. In Shutdown mode, most of the internal circuits are turned off for power savings, and the output amplifier is configured to present a known high resistance output load (500 kΩ, typical). The device includes double-buffered registers, allowing synchronous updates of the DAC output using the LDAC pin. The device also incorporates a Power-on Reset (POR) circuit to ensure reliable powerup. The device utilizes a resistive string architecture, with its inherent advantages of low Differential Non-Linearity (DNL) error and fast settling time. The device is specified over the extended temperature range (+125°C). It provides high accuracy and low noise performance for consumer and industrial applications where calibration or compensation of signals (such as temperature, pressure and humidity) is required. The MCP4921 device is available in the PDIP, SOIC, MSOP and DFN packages. Figure 4 shows the chip pin configuration. The MCP4921 device is designed to interface directly with the Serial Peripheral Interface (SPI) port, which is available on the PIC18F452 microcontroller and supports Mode 0,0 and Mode 1,1. Commands and data are sent to the device via the SDI pin, with data being clocked-in on the rising edge of SCK. The communication is unidirectional; this means the data cannot be read out of the MCP4921. The CS (chip select active low) pin must be held low for the duration of a write command. The write command consists of 16 bits and is used to configure the DAC’s control and data latches. Register shown in Figure 5, details the write command which is loaded into the input register that is used to configure and load the DAC register [6].
MCP4921 pin configuration.
Write command register for MCP4921 (12-bit DAC).
The write command is initiated by driving the CS pin low, followed by clocking the four Configuration bits and the 12 data bits into the SDI pin on the rising edge of SCK. The CS pin is then raised, causing the data to be latched into the DAC’s input register. The MCP4921 utilizes a double-buffered latch structure to allow the analog output to be synchronized with the LDAC pin, if desired. By bringing the LDAC pin down to a low state, the content stored in the DAC’s input register is transferred into the DAC’s output register (VOUT), and VOUT is updated. The write to the MCP4921 device is 16-bit words. Any clocks past the 16th clock will be ignored. The Most Significant 4 bits are Configuration bits. The remaining 12 bits are data bits. No data can be transferred into the device with CS high. This transfer will only occur if 16 clocks have been transferred into the device. If the rising edge of CS occurs prior to that, shifting of data into the input register will be aborted. The most four significant bits are defined as follows:
bit 15 0 = Write to DAC register
1 = Ignore this command
bit 14 BUF: VREF Input Buffer Control bit
1 = Buffered
0 = Unbuffered
bit 13
1 = 1x (VOUT = VREF * D/4096)
0 = 2x (VOUT = 2 * VREF * D/4096)
bit 12
1= Active mode operation. VOUT is available.
0 = Shutdown the device. Analog output is not available.
VOUT pin is connected to 500 kΩ (typical).
This module is designed to display the value of the temperature detected by the temperature sensor and to guide the user in changing the parameters of the controller. The LCD is a 16 × 2 alphanumeric display with the built-in Hitachi 44780 controller and LED backlighting. It works with an 8-bit data bus, which means it will require a total of 11 data lines. Three control lines (connected to port E) plus the 8 lines for the data bus (connected to port D) [7].
The system is design around a stand-alone PIC18F452 controller, where the measured variable (MV) is read through channel0 (pin 2). The MV is subtracted from the set point automatically by the controller. The error is treated by the PIC PID and produces a digital control variable. This control variable is outputted through PIC serial data output pin (SDO pin 24) together with serial clock pin (SCK pin 18) to synchronize the conversion process. For the conversion to take place, the serial DAC chip select (CS) has to be pulled low. The CS is connected to pin RC0. The positive reference voltage is connected to +5 V (pin 6) and the negative reference voltage (pin 7) is tied to zero volt. The analog output is read through pin8 (Vout). This voltage is small to drive an electric motor. This voltage is pulled up to +12 V through the non-inverting operational amplifier (LM358). The Darlington transistor 2SD1409 is used to bust the current. The motor is connected to the emitter follower so that the driving current is sufficient enough to drive the motor. Needless to say that the diode 1N4148 is used to protect the Darlington transistor against any spike due to the change of current. Figure 6 shows the schematic of the system. The LCD is used to display the measured temperature. To manipulate the setting of different parameters, six push buttons are used as follows:
System schematic circuit showing all the connection to the microcontroller, as well as the liquid crystal display and the final control element.
Six push buttons were used in the project to allow the user to change the setting and the controller parameters. Their functions are as follows:
Reset: To reset the microcontroller.
Stop: interrupt the program to allow the user to change the controller settings
Run: To run the program
Mode: To allow the user to change between setting modes.
Increment: To increment the controller variables by 1 or 0.1.
Decrement: To decrement the controller variables by 1 or 0.1.
These switches are connected to PIC PORTB to allow the user to use the internal build-in pull up resistors to prevent floating instead of using external pull-down resistors. The reset has got a separate button connected to MCLR pin. A buzzer is used as an alarm to indicate that the temperature is more than what the user specifies. Three LEDs were used to show the user the status of the microcontroller program. The three colors green, yellow, and orange were used as follows:
Green: means that the PID controller is working properly.
Yellow: means that the program is interrupted by (STOP) push button.
Red: means that the alarm is triggered.
To implement the control program, three major routines are used; the main routine along with the timer and external interrupts. The program starts with the main routine which contains all the configurations of the external pins whether outputs or inputs. It also contains the configurations of timer and external interrupts, so when one of these interrupts is triggered, the microcontroller will stop its current execution and perform another action. The trigger will be caused by either an overflow in timer register or a change on an external pin (RB0/INT0).
Because the time is a crucial element in digital control, the PID algorithm is controlled through a timer interrupt. This choice allows the user the ability to calculate the sampling time accurately. On the other hand, an external interrupt (INT0) is used to interrupt the program in order to allow the user a chance to modify the controller parameters. In the following we discuss in some details about the functions of each routine.
This routine, as mentioned earlier, is dedicated to configure the direction of external pins as well as interrupt sources. It also allows the user to choose the measured variable (temperature, flow, level or others). The flow chart of this routine is shown in Figure 7.
Main routine.
First PORTA (pin RA0) is configured as an analog input channel0 and PORTB as input digital port which is connected to the push button switches; while all other pins are configured as outputs.
The configuration of the LCD was performed by separate software from Microchip called Application Maestro [8]. With the aid of this software, a configuration code was produced after modifying the module parameters. It was then incorporated into the project. Once incorporated, the LCD is configured and ready to work. One feature of using Application Maestro is its ability to use the prewritten code that this software provides to initialize or to write to the LCD.
Timer0 can operate as a timer or as a counter. In Timer mode, the Timer0 module will increment with every instruction cycle (without prescaler). It is configured by setting a special function register called T0CON (timer0 control byte). This register is a readable and writable register that controls all the aspects of Timer0, including the prescale selection. In the design in hand, T0CON register is set to 0x85 (0b10000101) as shown below [9, 10].
This value will configure the timer0 as follows:
● | TMR0ON | = 1 | : Timer0 is enabled | ||
● | T08BIT | = 0 | : Timer0 is configured as a 16-bit timer | ||
● | T0CS | = 0 | : Internal instruction cycle clock | ||
● | T0SE | = 0 | : This bit is used only with external clock | ||
● | PSA | = 0 | : Timer0 prescaler is assigned | ||
● | T0PS2 | = 1 | : Bit2: T0PS2 =1: | } | 1:64 prescaler value |
● | T0PS1 | = 0 | : Bit1: T0PS1 =0: | ||
● | T0PS0 | = 1 | : Bit0: T0PS0 =1: |
There are ten registers which are used to control internal and external interrupt operations to accommodate a variety of interrupts [11]. In the project in hand, only two interrupts are required INT0 and timer0 interrupt. To do so, only three control registers are required. These registers are INTCON, INTCON2, and RCON. INTCON register contains various enable bits as well as several interrupt flags. RCON is the Reset Control register which contains flag bits that allow differentiation between the sources RESET. Timer0 interrupt is enabled by setting TMR0IE bit (<5>) while external interrupt is enabled by setting INT0IE (INTCON<4>). Note that the interrupt flags are reset before enabling the interrupt in order to avoid unwanted interruptions.
To start the interrupt, the global interrupt bit GIE/GIEH (INTCON<7>) must be set. If set, it enables all unmasked interrupts, so if more than one interrupt source is used (as in our case) the Interrupt Priority Enable bit IPEN (RCON<7>) must be set and the interrupt sources should be specified either as high or low priority interrupt. The interrupt priority bit TMR0IP (INTCON2<2>) is used to specify the interrupt priority for Timer0. This bit is reset so timer0 interrupt is set to low priority. On the other hand, no need to specify the priority of the external interrupt (INT0), because it is already set to high priority by default.
After configuring the interrupts, the program will enter an infinite loop until one of the interrupt sources is triggered.
The main purpose of this routine is to calculate the controller output and send it to the DAC serially through the synchronous SPI module [12]. Figure 8 shows the routine function.
Timer interrupt routine.
Because of the importance of time in calculating the timed controller output, timer0 is used as an accurate hardware timer. The source clock of the timer is the crystal oscillator which is fed to the clock pin of Timer0 internally. The clock used is a 20 MHz derived from a stable crystal oscillator. This frequency is automatically divided by 4 because the controller machine cycle is 4 clocks to give a 5 MHz which is fed to the timer. The timer is exactly clocked every 0.2 μs and takes 13107.2 μs (16-bit mode) to count from zero to zero again. However, by loading the timer with a suitable value, a smaller time interval could be obtained. For example, by loading the timer with the value 4095 (0xFFF), the overflow would occur after 12288.2 μs. Alternatively, the time period can be extended by using a prescaler as was done in the main routine. If a divide by 64 prescaler is selected, timer0 only overflows after 838.848 ms. This is obtained as follows:
This time period is less than one second, while a one second sampling time is required for the design in hand. To obtain a one second sampling time, the timer should count 78,125 pulses.
Because timer0 register is only 16 bit wide, it is only limited to count up to 65,535 pulses. The interruption is trigged several times to obtain one second timing, after which the controller computes the control action and sends it to the DAC. By using MPLAP simulator, it was found that 5362 cycles are required to calculate the controller output and send it to the DAC besides 51 extra cycles needed to reload the timer with time constant. If the interruption is required to repeat itself five times before calculating the controller output, one needs 5362 + 51 × 5 = 5617 cycles (1.1234 ms). Thus, in order to get exactly one second sampling time, the timer register (TMR0) has to be reloaded with a value that interrupts the program every 998.8766 ms (1 s–1.1234 ms). The following shows how this value is obtained:
By using a timer with 64 prescaler:
When we repeat the interrupt for 5 times:
But because the timer counts in ascending order (from 0x0000 to 0xFFFF):
However, the timer register accepts only integer numbers, thus the final value that should be added to the timer register is 49918. Because we omitted the numbers after the decimal point, our error will be ± 1 count which is equal to 64 cycles. Therefore, our error in calculating the sampling time will be:
This calculation is for getting 1 s sampling time. To expand the calculation in order to enable the user to change the sampling time, one defines two integer variables (repeat and cycle). The first variable repeat is to determine how many times we need to repeat the interrupt, while the second one cycle is the final value that should be added to the timer register. The following pseudo code shows the general formula used to reload the timer register.
The ADC module normally operates at 10-bits resolution, giving output digital values 0–1024 [13]. It needs a reference voltage to set the maximum and minimum values for the input conversion. This reference can be provided internally as Vdd and Vss (supply values) or externally through Vref+ and Vref− pins. To configure this module, OpenADC function from Microchip C library is used. This function performs a bitwise AND operation (“&”) between its arguments which are defined in the file adc.h. The parameters of this function along with their meaning of each argument are discussed below [1]
ADC_FOSC_32: FOSC/32.
A clock divider to allow the minimum specified conversion time (about 20 μs). A 32 prescaler was chosen because the clock source is 20 MHz
ADC_RIGHT_JUST: Right justified.
Because the ADRES register pair (where the converted values are loaded) is 16-bit wide. But the ADC is only 10bit wide. The ADC module could either be configured as right or left justified. In this project, right justified is chosen as shown in Figure 9. This sets the 6 most significant bits of register ADRES to zeros.
ADC_8ANA_0REF: VREF+ = VDD, VREF− = VSS
The supply values are chosen as the voltage references to the ADC.
ADC_CH0: Channel0 (AN0) is selected
ADC_INT_OFF: Interrupts of ADC interrupts are disabled.
Once the A/D conversion is completed, the result is stored in an integer variable called result. After reading the analog value by the ADC module, the result will be compared with the variable alarm-trigger which was previously specified. If the result is greater than this value, the microcontroller triggers the buzzer and lights the red LED.
Choosing right justified for data input.
Due to the limitation in the microcontroller’s memory, the PID equation is divided into three terms (term_1, term_2, and term_3) and after calculating each term separately, they are added together along with the previous output to give the controller output which will be sent to the DAC. The following code shows how to calculate the controller output
To send the control variable to the final control element, the serial DAC, which is interfaced to the Serial Peripheral Interface (SPI) port, is used. The SPI is initiated using Microchip C library called OpenSPI. This function also performs a bitwise AND operation between its arguments which are defined in the file SPI.h according to the following formula.
SPI_FOSC_16: Master mode and the clock = FOSC/16
MODE_00: Mode 0,0 (change takes place on the rising edge)
SMPEND: Input data sample at end of data out
After configuring the module, it is time to write a command to the DAC in order to convert it into analog signal. The write command is initiated by driving the CS pin low, followed by clocking the four configuration bits and the 12 data bits into the SDI pin on the rising edge of SCK. The CS pin is then raised, causing the data to be latched into the DAC’s input registers and when the LDAC pin is pulled down through RC1, the values held in the DAC’s input registers are transferred into the DAC’s output registers to provide the analog signal. It is important to mention here that we wrote the write command in two steps (as shown in the following code) because the SPI module send only 8 bit at a time.
To write characters to the LCD, required prewritten functions are provided by Application Maestro. Some of These functions are listed in following table:
It is used to initialize the LCD module according to the Application Maestro options | |
It sends the clocking signal and data to be displayed to the LCD | |
Points to the first address location of line one of the LCD | |
Points to the first address location of line two of the LCD | |
Clears the DDRAM content of the LCD and points to the 00 address location | |
Displays String in Program memory | |
Displays String in Data memory | |
It sends clocking signal and instructions to the LCD |
For numbers to be displayed, they are first converted into strings (characters) before being sent to the LCD, since the latter only accepts strings. To do so a C function called sprintf is called upon. This function saves the number in an array after converting it into string. The subroutine to do so is shown below [4]:
The main function of this routine is to allow the user to change the controller parameters. The routine is initiated by pressing the push button (STOP) which is connected to the external interrupt pin (RB0/INT0). Once initiated, the user is able to change all the parameters of the controller (KC, τI, τD, sampling time, alarm trigger and sensitivity) by using three push buttons (MODE, INCREMENT and DECREMENT [11].
To determine which action the microcontroller should take if any push button is pressed, we defined two integer variables (present_button and present_mode) to be used as statuses. That is, each bit of them has specific meaning as described below:
present_button
Np | ____ | ____ | ____ | ____ | ____ | ____ | ____ | ____ | ____ | ____ | ____ | ____ | dec | inc | Mod |
bit15 | bit0 |
● | |
● | Unimplemented |
● | |
● | |
● |
present_mode
____ | Srt | Spt | KC | TI | TD | Stm | Sen | Alm | Tun | Dp | Tp | Kp | ____ | ____ | ____ |
bit15 | bit0 |
● | Unimplemented |
● | |
● | |
● | |
● | |
● | |
● | |
● | |
● | |
● | |
● | |
● | |
● | |
● | Unimplemented |
Initially, before pressing any push button, present_button variable is loaded with 0x8000 (no push button pressed), and present_mode with 0x2000 (starting mode).Then if any push button is pressed, the corresponding bit of that push button will be set, giving a specific value of present_button which indicates the push button that was pressed by the user. So by performing a bitwise OR operation between the two variables (present_button and present_mode) we will come up with a number indicates the push button pressed and the present mode and based on that number we can decide the proper action to be taken by the microcontroller. The following code shows how to perform the OR operation after checking which of the push buttons was pressed. Beside changing the controller variables, this routine has another feature, it gives the user preliminary values of the controller parameters after entering the process variables. The result is derived based on Cohen-Koon tuning method. However, this feature is impractical if the sampling time is big [14].
To test the system, a first order system given by the equation below was used. To run the control action, the system was converted into a difference equation given by Eq. (10).
The process transfer function is first order, thus the discrete transfer function obtained using Zero-Order Hold will be:
where:
If
Therefore the difference equation of the output is:
After getting the difference equation, the control scheme was tested and the output of Figure 10 was obtained with the parameters set to:
Controller response with Kc = 0.2, Ti = 4.0 and Td = 0.
Controller response with Kc = 0.1, Ti = 3.0 and Td = 0.2.
By referring to the previous graphs, it could be concluded that the response tracks the set point as expected. In addition, the increase in controller gain (
The increased requirements to the microelectronics regarding the device potential for work at high temperatures, high powers, and high frequencies and in harsh environments engendered the increased interest to the wide band-gap semiconductors. They are considered as a third generation materials in the semiconductor industry, after Si and Ge, and A3B5 compounds and their solid solutions. Several materials of the wide band-gap semiconductor group such as SiC, III-V nitrides (GaN, AlN, c-BN), ZnSe, and diamond are very important for the device industry. The unique combination of physical properties in these materials allows development of devices, which could be applied in fields where the devices of the first and second generations cannot be used. Whereas Si and GaAs are chemically stable at 400 0C and 650 0C, respectively, SiC and III-V nitrides are stable up to 1000 0C (Meyer & Metzger, 1996). This high thermal stability allows development of new class high temperature and high power devices with maximal working temperature of 600 0C, which is three and four times higher than this one of GaAs and Si devices, respectively.
\n\t\t\tAmong the wide band-gap semiconductors, SiC and GaN have been most successfully applied in the device fabrication. These semiconductors offer a higher electric breakdown field (4-20 times), a higher thermal conductivity (3-13 times), and a larger saturated electron drift velocity (2-2.5 times) in comparison with silicon. These features make them very useful materials in development of high temperature and high power devices. The advantages of SiC and III-V nitrides technologies allowed manufacture of SiC-based and GaN-based devices such as unipolar high-voltage power FETs (MOSFET, JFET and HEMT), bipolar power diodes (p-n and p-i-n) and transistors (BJT, IGBT and HBT).
\n\t\t\tThe existing applications present many challenges in obtaining high-performance ohmic contacts because they are limiting for device functioning. The ohmic contacts are a critical factor that could restrict the high power and high temperature device application. The high operating temperatures may cause diffusion processes in the contact layer and reactions between the contact components, which could lead to changes of the contact properties during operation at high temperatures, and deterioration of the devices. If the contact resistivity is not sufficiently low inadmissible high voltage drop could arise due to the high current density in the contact of the high power devices. Hence, the following requirements to the ohmic contacts are decisive for application in high power and high temperature microelectronics:
\n\t\t\t\n\t\t\t\t\t\t
\n\t\t\t\t\t\t
\n\t\t\t\t\t\t
The listed requirements point that the operation of high temperature and high power SiC and GaN-based devices under severe conditions demands development of electrically, thermally and chemically stable metal contacts.
\n\t\tThe metal-semiconductor contact is one of the main elements of the semiconductor device structure, which parameters may significantly affect the device working characteristics.
\n\t\t\tWhen the metal comes into a contact with the semiconductor, a potential barrier is formed at the interface. Usually, this barrier has rectifying properties and it is named “Schottky barrier”. Two types of metal-semiconductor contacts are known: ohmic and Schottky contacts. The Schottky contacts are metal-semiconductor contacts in which a Schottky barrier is formed. The ohmic contacts are metal-semiconductor contacts, which have linear and symmetrical I-V characteristic and a negligible contact resistance as compared to the bulk or series resistance of the semiconductor. They realize the connection between the chip and package in the semiconductor devices.
\n\t\t\tThe presence of ohmic properties is determined by the shape and slope of the I-V characteristic. The main parameter characterized the ohmic contact is the resistivity (specific resistance), which is defined as (Yu, 1970; Sze, 1981)
\n\t\t\tAccording to the definition, the theoretical expressions for contact resistivity could be determined from the I-V characteristics taking into account the current transport mechanism through the contact (Yu, 1970). Four basic mechanisms are considered determinative for the current transport in the metal n-type semiconductor contact when a forward voltage is applied: 1) Emission of electrons from the semiconductor into the metal over the top of the barrier (thermionic emission). 2) Quantum-mechanical tunnelling through the barrier (field emission). 3) Recombination in the space-charge region. 4) Hole injection from the metal into the semiconductor. Depending on the carrier concentration the current transport through the contact is realized mainly by thermionic emission (TE) or field emission (FE). At a low semiconductor doping level (ND<1017 cm-3) the thermionic emission is prevailing. In the case of moderate doped semiconductors (1017 cm-3≤ND≤1020 cm-3) the depletion layer width decreases; the barrier becomes thinner and a part of electrons tunnel through it. With highly doped semiconductors (ND>1020 cm-3) and low temperatures the current transport is determined by the field emission through the barrier only. These processes are defined by a characteristic energy E00 (Padovani & Stratton, 1966):
\n\t\t\twhere ћ is a Plank’s constant h divided by 2; \n\t\t\t\t
With thermionic emission the contact resistivity depends on the potential barrier height only (Yu, 1970):
\n\t\t\tIn this case, metals formed a potential barrier with low height should be chosen to obtain contacts with low resistivity. With moderately doped semiconductors (thermionic-field emission), the resistivity is determined by both, the barrier height and the doping level of the semiconductor:
\n\t\t\twhere E0 is a measure of the probability for tunnelling through the potential barrier and
\n\t\t\t\n\t\t\t\t\n\t\t\t\t
The impurity concentration determines the contact resistivity with highly doped semiconductors. In this case the contact resistivity is changed exponentially by a factor of \n\t\t\t\t
where A=A*T2 and
\n\t\t\t\n\t\t\t\t\n\t\t\t\t
The quality and reliability of the ohmic contacts have been evaluated by the behaviour of the main characteristic parameter, the contact resistivity. According to the definition of the contact resistivity it could be present as the contact resistance Rc multiplied by the contact area S:
\n\t\t\tSeveral methods for contact resistivity measurement are known: two probes method, differential method, extrapolation method, method of the interface probes, four probes method and Transmission line model method (TLM). TLM method is the mostly used method because it combines a low measurement error with a possibility of I-V characteristic linearity determination and low sizes of the test structures. Depending on the contact shape in the test structure the TLM method has two modifications, linear (Berger, 1972) and circular (Marlow & Das, 1982). The linear TLM method allows promptly determination of the contact resistivity despite that formation of mesa structures is needed. Formation of mesa structures is not necessary with the circular TLM method; however it is applicable at very low sheet resistance of the metals only. The values of the contact resistivity presented herein are determined using a linear TLM method.
\n\t\t\tAs follows from the theory, two basic approaches could be used to create ohmic contacts: by increasing the semiconductor doping level and/or by decreasing the barrier height (Fig. 1).
\n\t\t\tA zone diagram of an ohmic contact with a) low barrier height and b) high doping level.
It is difficult to obtain low resistivity ohmic contacts to p-type wide band-gap semiconductors due to the high electron affinity and high width of the band-gap. For instance, the electron affinity of SiC and GaN is 3.3 eV and 1.84 eV, respectively. For the mostly used SiC polytypes, the band-gap width is in the interval 2.3-3.2 eV, while for GaN it is 3.44 eV for wurtzite polytype and 3.2 eV of the zinc-blended structure. Hence, a very high Schottky barrier is formed at the interface metal/p-type (SiC, GaN). A metal does not generally exist with a work function enough to yield a low barrier at the interface. In such cases the technique for making ohmic contacts involves the establishment of a heavy doped surface layer such as metal/p+-p contact by various methods, such as shallow diffusion, alloy regrowth, in-diffusion of a dopant contained in the contact material. Annealing is the mostly used method for obtaining low resistivity contacts. After the metal film deposition the contacts are heated at the corresponding eutectic temperature for an optimal time in an ambient of an inert gas. As a result they are alloyed into the semiconductor or compounds lowering the barrier height are formed at the interface. The development of such methods of the modern microelectronics as molecular-beam epitaxy (MBE), metal-organic chemical vapour deposition (MOCVD) epitaxy and ion implantation allow obtaining high doping level ( 1020 cm-3) of the epitaxial layers during the growth. By this technique “in-situ” ohmic contacts can be obtained without annealing.
\n\t\tSiC is a material, which exists in over 130 polytypes. Among them only 6H, 4H and 3C are of interest for microelectronics. Between these three polytypes 4H-SiC has been mainly used for microelectronics devices due to the best combination of widest band-gap, highest breakdown voltage and highest electron mobility.
\n\t\t\tOhmic contacts with contact resistivity in an order of 10-6 Ω.cm2 have been successfully developed firstly to n-type SiC. Different metals and its compounds such as Cr, Ni, TiN, TiW, W, Ti, Mo, Ta and etc., have been reported as suitable for ohmic contacts with resistivity in the range of (10-2 ÷ 10-6) Ω.cm2 (Porter & Davis, 1995; Crofton et al., 1997). In this section the properties of Ni-based contacts to n-type SiC are discussed because Ni has found to be the most appropriate metal for the device application. Ni and some metals such as Mo, Co, and W are found to form silicides in the metallization interface. During annealing of these contacts the reactions occurring at the interface are accompanied by liberation of carbon whose accumulation in the contact layer deteriorates the contact reliability during the device operation. In order to eliminate this unfavourable effect, a contact system consisting of multilayered Ni/Si films in the ratio 2Ni:Si, has been proposed instead of the pure nickel (Marinova et al., 1997). Herein, Ni/n-SiC and multilayered Ni/Si/n-SiC and Si/Ni/n-SiC contacts formed on substrates with a concentration of 1.8x1018 cm-3 (6H-SiC) and 8x1018 cm-3 (4H-SiC) are compared regarding the electrical, thermal and chemical properties. Studies on the electrical characteristics of these contacts have shown that after annealing at 950 0C for 10 minutes, Ni and Ni/Si layers form low-resistivity ohmic contacts to n-type SiC. The value of the resistivity depends strongly on the substrate doping concentration (Fig. 2). The resistivity of the contacts formed on substrates with the same doping concentration does not differ significantly by the contact composition. Values as measured by a linear TLM method have been determined in the interval (1.6÷2.9)x10-5 Ω.cm2 for the contacts formed on substrates with carrier concentration of 1.8x1018 cm-3. Increase the doping concentration to 8x1018 cm-3 affects on contact resistivity decrease by an order of magnitude and a value of 2.7x10-5 Ω.cm2 has been measured with these substrates. The calculations show that the contacts with the same substrate doping level of 1.8x1018 cm-3 have a depletion layer width (potential barrier width, respectively) within the range (1.08 ÷ 1.11)x10-6 cm (Kassamakova-Kolaklieva, 1999). The higher doping concentration causes narrowing the depletion layer width to 6.06x10-7 cm, which results in decrease of the contact resistivity by an order of magnitude.
\n\t\t\t\tThe mechanism of current transport through the Ni/SiC, Ni/Si/SiC and Si/Ni/SiC can be determined on the basis of the kT/E00 ratio. With the contact systems under consideration, a kT/E00 ratio of about 1 has been calculated with a doping concentration ranging from 1.7x1018 cm-3 to 1x1019 cm-3. This result determines the thermionic-field emission as the main mechanism of current transport through the contacts.
\n\t\t\t\tDependence of the resistivity of Ni-based contacts to n-type SiC on the substrate doping and the initial contact composition.
The good agreement between the experimentally obtained values of the resistivity and the theoretical dependence on the doping level calculated with a potential barrier height of (0.20 ÷ 0.35) eV confirms the thermionic-field character of the current transport in the Ni, Ni/Si and Si/Ni ohmic contacts to n-type SiC (Fig. 3) (Kassamakova-Kolaklieva, 1999).
\n\t\t\t\tComparison of experimentally obtained resistivity values of Ni-based contacts to n-type 6H- and 4H-SiC with theoretical values calculated with different potential barrier heights.
X-ray photoelectron depth analyses (XPS) performed in order to understand the origin of ohmic properties in Ni-based contacts to n-SiC, have shown that the as-deposited polycrystalline nickel layer is homogeneous and a smooth surface is observed. The interface is chemically abrupt with a very thin amorphous layer, probably due to the ion bombardment prior to evaporation. Fig. 4a shows the XPS profile of a Ni/SiC contact after annealing at 950 0C. The Ni2p/Si2p peak ratio, as well as the binding energy of these peaks (respectively 853.2 eV and 99.4 eV), indicate the formation of a nickel silicide with a composition close to Ni2Si (Grunthaner et al., 1980). Carbon in graphite state (Cls at 284.2 eV) is present in the whole contact layer with a maximal concentration at the interface. At the interface, the Ni2p peak remains at the same position while the maximum of the Si2p and C1s peaks are shifted towards the binding energies corresponding to SiC. The TEM cross section of the annealed specimen presented in Fig. 5a confirms that the entire nickel layer has reacted to form a nickel silicide. The contact layer contains a lot of Kirkendall voids and its thickness has been increased substantially. The interface is shifted into the SiC, part of which has been consumed to supply Si for Ni2Si formation. In the area of the original interface, an extremely high number of voids can be found. Quantitative EDS analysis indicates a composition close to Ni2Si and strong carbon incorporation. Diffraction patterns from different grains could be indexed as the δ-Ni2Si orthorhombic phase. These results suggest the following mechanism to describe the Ni/SiC contact formation after annealing at optimal temperature of 950 0C: (1) SiC dissociates due to the strong reactivity of nickel above 400 0C; (2) at 950 0C, the Ni2Si stable phase is formed leading to carbon accumulation both at the interface and in the metal layer (Waldrop & Grant, 1993); and (3) a part of dissociated Si atoms diffuse through the nickel layer and simultaneously Ni atoms diffuse towards SiC until the complete consumption of the deposited nickel layer is realized.
\n\t\t\t\tXPS depth profiles of Ni/SiC (a) and Ni/Si/SiC (b) contacts after annealing at 950 0C for 10 minutes.
The depth distribution of the elements shows that similar profiles are observed for the both contacts, Ni/Si and Si/Ni after annealing at 950 0C for 10 min, when silicon was introduced in the nickel layer in order to prevent the SiC dissociation during the contact formation. XPS profile and TEM micrograph image of the Ni/Si/SiC contact are presented in Fig. 4b and\n\t\t\t\t\tFig. 5b, respectively. A Ni2Si layer is obtained as indicated by the binding energies and the ratio of Ni2p to Si2p signal intensity. There is no carbon contained in the silicide layer. At the interface, carbon is still observed but the amount is lower than for the previous Ni contacts. The bright field TEM image of the contact obtained with Si as first deposited layer reveals that the contact layer is uniform, polycrystalline and the δ-Ni2Si orthorhombic phase is identified. Some Kirkendall voids are still present at the interface but not in the contact layer itself. In the case of the nickel interfacial layer, the contact morphology is similar while a greater number of voids is observed. These results suggest that intentional silicon incorporation in the nickel layer modifies the diffusion processes, which are responsible for the contact formation. In the case of Ni/Si multilayers, Ni and Si mutual diffusion occurs, leading to the stable phase of the nickel silicide, Ni2Si. The reaction between Ni and SiC at the interface is limited since almost all the nickel is already bonded to the silicon atoms. As a consequence, the SiC decomposition is reduced and only a small amount of carbon is released.
\n\t\t\t\tTEM micrographs of the Ni/SiC (a) and Ni/Si/SiC (b) interfaces after annealing at 950 0C for 10 minutes.
As it was mentioned, the combination of high electron affinity with wide band-gap in p-type SiC causes high barrier formation at the interface metal/p-SiC, which strongly hampers obtaining low resistivity ohmic contacts. In the case of p-type 4H-SiC a value of the barrier height has been estimated to be over 6 eV. Hence, suitable for p-type ohmic contacts to 4H-SiC could be metals having a work function in order of 7 eV, which is unrealistic. The metals used in microelectronics have work functions between 4 eV and 5.5 eV. For that reason, it is impossible to create ohmic contacts with low resistivity relaying the barrier decrease by selection of a suitable metal only.
\n\t\t\t\tA large variety of alloys, metals and compositions have been proposed as suitable for ohmic contacts to p-type SiC. (Porter & Davis, 1995; Crofton et al., 1997) Depending on the contact composition they could be classified in two main groups, 1) Al-based contacts and 2) Al-free contacts. The Al-based contacts consist of Al, its alloys or multilayers one of which is Al. It has been considered that during annealing of these contacts, Al diffuses into SiC, which causes increase of the p-type concentration in the interface layer. As a result, the depletion layer width is decreased and the p-type carriers can tunnel effectively through the potential barrier. Usually, for Al-free contacts refractory metals having a high work function and/or forming compounds, which create low and thin interface barrier, are used.
\n\t\t\t\tAmong the all elements (Al, B, Ga, In, Be) used in the present semiconductor technology, Al is the most suitable dopant in the growth of p-type SiC. For that reason, the compositions containing Al have been considered as very appropriate material for p-type ohmic contacts to SiC. Al is the first metal suggested for an ohmic contact to p-SiC. However, the application of pure Al metallization is restricted by formation of pits during annealing which worsen the contact morphology and conductance. In analogy with the silicon technology, Al/Si(1-2 wt.%) composition has been proposed to avoid this problem. Nevertheless, the low diffusion coefficient of Al into SiC requires high annealing temperatures, which enhances the tendency of metal film oxidation and consequently the contact resistivity increases. Therefore, less oxidized refractory metals have been added into the Al-based contact systems. The mostly used metal for this purpose is Ti (Crofton et al., 1993). The titanium presence in the metallization scheme prevents the Al oxidation and allows its diffusion into SiC. The used thick upper Ti layer acts as a barrier for the Al volatilization observed during the contact annealing. Although other Al-based contacts have been proposed subsequently, the Ti/Al contact still remain the most applied p-type contact in the SiC devices. These contacts could be obtained using an Al-Ti alloy or by subsequent deposition of Al and Ti multilayers (layered contacts).
\n\t\t\t\t\tThe electrical characteristics of four typical Al-based contacts are presented in Figs. 6. and 7. (Kakanakov et al., 2001; Kolaklieva et al., 2004; Kolaklieva et al., 2007). The contacts are formed on p-type 4H-SiC epitaxial layers with a thickness of 1 µm and a carrier concentration of 3x1019 cm-3. The Au/Al/Si and Au/Ti/Al contacts are multilayered and the films are successively deposited. The thicknesses of the Si, Ti and Al component films were nanoscaled and chosen according to the ratios: Si (2 wt.%) in Al/Si, Ti (70 wt.% and 30 wt.%) in Ti/Al and Al (30 wt.% and 70 wt.%) in Ti/Al before annealing. The total thickness of these films is 100 nm. The same thickness has an AlSi(2 wt.%)Ti(0.15 wt.%) alloy contact. In all contact types a 100 nm thick Au film is deposited as a cap layer.
\n\t\t\t\t\tI-V characteristics of Al-based contacts to p-type SiC: a) as-deposited; b) annealed at an optimal temperature.
I-V characteristics of all as-deposited Al-based metallizations have a shape typical of the Schottky barrier, which determines the rectifying behaviour of the unannealed contacts. They do not differ significantly, which is expectable because of the same substrate doping concentration and the same metal film at the interface. Small difference corresponding to higher potential barrier is observed with the Au/Al/Si contact because of the different element forming the interface with SiC. The initial contact composition and composite ratio influence on the annealing process and dependence of the contact resistivity on the temperature. Fig. 6b presents I-V characteristics of the contacts after annealing at optimal temperature, at which lowest contact resistivity has been observed (Fig. 7). The I-V characteristics of the annealed contacts exhibit various slopes implying different contact resistivities. The smaller slope corresponds to the higher resistivity value, which is confirmed by the results from the investigation of the contact resistivity dependence on the annealing temperature. The addition even of a little titanium amount to the contact composition causes an increase in the annealing temperature at which the lowest contact resistivity has been obtained, from 700 0C (for Au/Al/Si) to 1000 0C (for Au/Ti/Al). The presence of Ti in the contact composition also affects on the resistivity decrease to a value of 1.2x10-5 Ω.cm2 compared to that of the Au/Al/Si contacts (2.5x10-4 Ω.cm2).
\n\t\t\t\t\tContact resistivity obtained for Al-based contacts annealed at optimal temperatures: Au/Al/Si – 2.5x10-4 .cm2; Au/AlSITi – 6.4x10-5 .cm2; Au/Ti(30%)/Al(70%) - 1.410-5 .cm2 and Au/Ti(70%)/Al(30%) - 1.2x10-5 .cm2.
The surface morphology of Al-based contacts obtained by Atomic Force Microscopy (AFM) demonstrates strong dependence on the contact composition and weight percentage of each contact component as well as the annealing conditions (Tabl. 1) (Kassamakova et al., 2001; Kolaklieva et al., 2007). AFM images taken from (2x2) µm2 (for Au/Al/Si and Au/AlSiTi) and (10x10) µm2 (for Au/Ti/Al) area reveal the granular structure of the as-deposited contacts. The higher Al amount in the as-deposited contacts causes raising the surface roughness, which originates from the specific feature of Al to form drops during evaporation. After annealing at the optimal temperature the surface roughness increases with the annealing temperature and the Al amount in the contact.
\n\t\t\t\t\tContact type | \n\t\t\t\t\t\t\t\tAl/Si(2%) | \n\t\t\t\t\t\t\t\tAlSi(2%) Ti(0.15%) | \n\t\t\t\t\t\t\t\tAu/Ti(70%)/ Al(30%) | \n\t\t\t\t\t\t\t\tAu/Ti(30%)/ Al(70%) | \n\t\t\t\t\t\t\t
R MS (as ? deposited contact) | \n\t\t\t\t\t\t\t\t3 nm (2x2) µm 2\n\t\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t\t9 nm (2x2) µm 2\n\t\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t\t8 nm (10x10) µm 2\n\t\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t\t22 nm (10x10) µm 2\n\t\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t
R MS (annealed at optimal temperature contact) | \n\t\t\t\t\t\t\t\t13 nm (2x2) µm 2 | \n\t\t\t\t\t\t\t\t16 nm (2x2) µm 2 | \n\t\t\t\t\t\t\t\t28 nm (10x10) µm 2 | \n\t\t\t\t\t\t\t\t101 nm (10x10) µm 2\n\t\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t
Surface roughness of as-deposited and annealed at optimal temperature Al-based contacts.
XPS depth analyses of the contact composition and interface chemistry of the as-deposited Al-based contacts reveal an abrupt metal/SiC interface. No interdiffusion between the as- deposited multilayers is observed and well-expressed borders between them are detected. The different compositions and resulting different annealing temperatures led to remarkable differences in element distribution and interface chemistry of the contacts (Fig. 8). The deposition of silicon between the Al layer and the SiC substrate, and the relatively low annealing temperature reduce the interdiffusion/chemical reaction processes. As a result a significantly more abrupt interface in the Al/Si/SiC contact after annealing at 700 0C has been observed (Fig. 8a). The analysis of the photoelectron spectra shows that interdiffusion and chemical reactions during annealing at 950 0C lead to the transformation of the initial AlSiTi alloy layer (fig. 8b). Due to the catalytic effect of Al at elevated temperatures SiC dissociation occurs at the metal/SiC interface. A part of C reacts with Al to form Al4C3 (BE 283 eV), while the other part is registered as graphite (BE 284.5 eV) in the contact layer (0-200 min sputtering). The broadened to the lower binding energy C1s peak (BE 283 eV) after 100 min to 150 min sputtering could be assumed as overlapping peaks of C in TiC and Al4C3. A weak Si2p peak determined in the contact layer corresponds to the Si-Si bond. After 200 min sputtering aluminium in metal state only has been detected. The intensity of Al2p peak typical for Al in metal state does not change significantly in the sputtering interval 200-500 min, which suggests diffusion of Al atoms into SiC and widening the interface region (Kassamakova et al., 2001).
\n\t\t\t\t\tLikewise, annealing of the Au/Ti/Al contact changes essentially the element distribution in the contact layer and at the interface as the process determines by the Ti/Al ratio (Figs. 8c and 8d; The different sputtering time is due to the different sputtering ratio, not different contact thickness). The XPS depth profiles allow dividing the contact structure into three regions: surface, film and interface.
\n\t\t\t\t\tXPS depth profiles of Al-based contacts: a) Al/Si/SiC; b) AlSiTi/SiC; c) Au/Ti(30%)/Al(70%)/SiC; d) Au/Ti(30%)/Al(70%)/SiC.
In both contacts strong Al diffusion to the surface promoted by the thermal treatment is obtained. With prolonged sputtering, the Ti/Al=(70/30) wt.% film (Fig. 8c) shows a simultaneous increase in gold and titanium concentrations. The shift of the binding energy of gold in this region up to 84.7 eV is probably connected with the change in chemical surroundings of the Au atoms by Ti atoms and it could be associated with formation of an Au(35at%)+Ti(42at%) alloy. The position of the C1s peak reveals presence of TiC in the film region. Quite a different element distribution is observed for the Ti/Al=(30/70) wt.% contact (Fig. 8d). The film region consists mainly of Au and Al as a decrease in Al and increase in Au concentrations is detected.
\n\t\t\t\t\tThe concentrations of Ti, Si and C remain almost constant and formation of Ti3SiC2 compound is possible. Simultaneously a shift of the Au4f peak core level to a higher binding energy (84.2 eV) has been detected up to 1200 min sputtering. This could be associated with change in chemical surroundings of the Au atoms by Al. The formation of an Au-Al alloy is not excluded. Between 1200 and 1800 min sputtering, Au in metal state and formation of TiC is detected. The interface region of the Ti/Al=(70/30) wt.% contact has been found to be narrow. The annealing at 900 0C causes dissociation of the SiC surface and dissociated carbon interacts with Ti forming TiC. The interface region for the contact with a Ti/Al=(30/70) wt.% ratio annealed at 1000 0C is remarkably wider. Along the interface increase of Au, Si and C concentrations has been observed, accompanied by a decrease in Al concentrations. The shift of the Au4f binding energy to the higher values has been determined, which could be connected with silicide formation. Appearance of TiC as a result of the SiC surface dissociation has been also detected. No carbon in graphite state and nonbonded silicon has been obtained (Kolaklieva et al., 2007).
\n\t\t\t\tPalladium is a metal appropriate for ohmic contacts to p-type semiconductors due to its high work function (5.12 eV). Palladium ohmic contacts are successfully used in GaAs devices. It is known that the silicides of noble metals such as Ir, Pt and Pd are suitable for ohmic contacts to p-type Si. Palladium reacts with SiC at relatively low temperatures ( 500 0C) and forms silicides, which are considered to be contributory to the barrier height decrease. Besides, recently Pd is a widely used metal in SiC chemical and gas sensors intending to operate at high temperatures. In earlier works Pd is reported as a very promising metal for low resistivity ohmic contacts to p-type SiC (\n\t\t\t\t\t\t\tKassamakova et al., 1999\n\t\t\t\t\t\t, Kassamakova-Kolaklieva et al., 2003).
\n\t\t\t\t\tThe properties of Au/Pd and Au/Pd/Ti/Pd ohmic contacts will be compared in this section. They are deposited on the same substrates as the Al-based contacts. As-deposited Au/Pd and Au/Pd/Ti/Pd contacts show Schottky barrier behaviour. The dependence of the contact resistivity on the annealing temperature is different for both contact compositions (Fig. 9). Ohmic properties for the Au/Pd contacts are observed after annealing at 600 0C and a resistivity of 7.2x10-4 Ω.cm2 has been measured at this temperature. The contact resistivity decreased smoothly with the temperature increase up to 850 0C. After annealing at this temperature a lowest resistivity of 4.2x10-5 Ω.cm2 was obtained for these contacts. The dependence of the resistivity on the annealing temperature is steeper for the Au/Pd/Ti/Pd contacts. Annealing at temperatures of 600 0C and 650 0C does not change the Schottky behaviour. They become ohmic after annealing at 700 0C, but the contact resistivity is still high, 3.3x10-3 Ω.cm2. A lowest reproducible resistivity of 2.9x10-5 Ω.cm2 has been obtained after annealing at temperature of 900 0C.
\n\t\t\t\t\tDependence of the resistivity of Pd- based contacts on the annealing temperature.
This result shows that addition of the refractory titanium into the contact composition shifts the optimal annealing temperature to the higher values. Further increase of the annealing temperature of both contact types causes a resistivity increase. Consequently, the annealing temperature of 850 0C and 900 0C can be accepted as optimal for ohmic properties formation of the Au/Pd and Au/Pd/Ti/Pd contact composition, respectively.
\n\t\t\t\t\tThe different annealing techniques cause different surface morphology of the Pd-based contacts. The surface morphology of the as-deposited contacts follows the surface features (terraces) of the SiC substrate with a surface roughness of around 1.2 nm and a mean grain size of around 100 nm. After RTA annealing at temperature optimal for both contact types the surface reveals an altered granular structure of the metals. Both grain size and surface roughness are increasing to values of 1-3 µm and 50-100 nm, respectively (Fig. 10 a, b). The annealing in a resistance furnace leads to improved surface morphology and contact properties. The surface roughness (RMS=13 nm) and the mean grain size (150 nm) are smaller (Fig 10 c). However, in this contact structure a strong interdiffusion occurs as can be seen in the AFM image of a scan across the border of a contact pad (Fig. 10 d), where the initial step height between SiC surface and contact pad almost vanishes.
\n\t\t\t\t\tAFM images: ((25x25) µm², z-scale 1 µm) of RTA annealed Au/Pd/SiC contacts at 850 0C (a) and Au/Pd/Ti/Pd/SiC at 900 0C (b); of RFA annealed Au/Pd/Ti/Pd/SiC contacts at 900 0C - 2D image (5x5 µm², z-scale 50 nm) (c); and 3D image (10x10) µm² across the border between an annealed contact pad and the SiC substrate (d).
The XPS depth profile of the as-deposited Pd/SiC and Au/Pd/Ti/Pd/SiC contacts show a steep interface metal/SiC as well as steep interfaces between the metals forming the contact composition (\n\t\t\t\t\t\t\tKassamakova et al., 1999\n\t\t\t\t\t\t; Kolaklieva et al., 2004). After annealing at an optimal temperature the contact composition changes completely (Fig.11). Annealing of the Pd/SiC contact at 700 0C initializes dissociation of SiC surface in the presence of Pd atoms. The released Si atoms interact with palladium to form palladium silicide while the dissolved carbon atoms start to accumulate at the interface. The XPS spectra have established the presence of the two palladium silicides Pd3Si and Pd2Si together with carbon in graphite state distributed in the whole contact film. As a result, the SiC interface is shifted into the SiC bulk, since a part of the original interface is consumed to supply Si for the Pd3Si formation. After annealing of the Au/Pd/Ti/Pd contact, a new contact composition has been obtained. The contact layer consists of Au in a metal state, unreacted Pd, palladium rich silicide (Pd3Si) and TiC, while the interface layer is composed of a less Pd-rich silicide (Pd2Si). As in the Pd/SiC contact a part of the original interface is consumed due to the partial dissociation of SiC to Si and C. Again, the free Si atoms interact with Pd to form Pd2Si in the interface near region and Pd3Si in the more remote contact layer, while the dissolved C atoms react with Ti and TiC is formed. Due to the presence of Ti in the contact composition, the carbon resulting from SiC dissociation during annealing is completely consumed. It should be noted that in contrast to the Pd/SiC contact, no carbon in graphite state has been observed in the annealed Au/Pd/Ti/Pd contact. The absence of free C in the annealed contact causes improvement of the contact stability during the long-term treatments and at high operating temperatures. The presence of Au and Pd in metal state contributes to the good contact conductivity.
\n\t\t\t\t\tXPS depth profiles of Pd-based contacts: a) Pd/SiC annealed at 700 0C and (b) Au/Pd/Ti/Pd/SiC annealed at 900 0C.
By contrast with the Si and GaAs devices, which operating temperature is limited by the electronic properties of the semiconductor material, the maximum operating temperature of SiC and III-nitride devices is limited by stability of the contacts. Some device parameters such as response time, output power and etc. depend strongly on the ohmic contact resistivity and its stability at high operating temperatures. Therefore the contact reliability at high temperature treatment is considered as the critical factor determining their power application.
\n\t\t\t\tThe thermal stability of the contacts consists in their parameters remaining unchanged under the effect of the temperature. This property is investigated on the basis of the behaviour of a physical or electrical parameter characterising the contact under the effect of the temperature. For ohmic contacts such parameter is the resistivity. Usually, the thermal stability of ohmic contacts is investigated for long time treatment at fixed temperatures (ageing test) and by the dependence of the resistivity on the dynamically increasing temperature (temperature-dependence test).
\n\t\t\t\tIn this section the thermal properties of Ni-based, Al-based and Pd-based ohmic contacts to SiC are presented (Kakanakov et al., 2004; Kolaklieva et al., 2004; Kassamakova-Kolaklieva et al., 2003). The effect of the long term ageing of the contacts on the electrical properties has been studied by heating at 500 0C, 600 0C and 700 0C for 100 hours at each temperature. In fixed time intervals the contacts are cooled to room temperature and the contact resistivity is measured. The results from this study are summarized in Fig.12. All contacts show non-essential change of the resistivity during 100 hours ageing at 500 0C. Both Pd-based contact types have demonstrated good thermal stability at 500 0C heating for 100 hours. Increase of the ageing temperature to 600 0C results in different contact behaviour. A significant effect of the thermal treatment at this temperature is observed on the electrical properties of the Au/Pd contacts. After 24 hours heating their contact resistivity increases to a value of 1.4x10-4 Ω.cm2. Further heating at this temperature does not deteriorate them. On the contrary, the Au/Pd/Ti/Pd contacts show excellent thermal stability during ageing at 600 0C and 700 0C. The improved thermal stability of Au/Pd/Ti/Pd ohmic contacts can be explained by formation of a thermodynamically stable contact configuration during annealing. The annealing of the Au/Pd contacts results in formation of Pd2Si at the interface. Pd2Si is the Pd-richest silicide, which is in thermodynamic equilibrium with SiC. Therefore it is considered as a metallization to SiC stable during prolonged thermal treatments. However, the formation of palladium silicides during annealing leads to the accumulation of free C within the contact layer, which is responsible for the observed instability of Au/Pd contacts during the long term ageing at higher temperatures. During annealing of the Au/Pd/Ti/Pd contacts two processes run: formation of Pd2Si at the interface and reaction between the titanium and the free carbon in the contact layer. The latter leads to the formation of the thermodynamically stable TiC compound phase and reduction (or total use up) of the free C in the contact layer, which results in improving of the thermal stability of the contacts.
\n\t\t\t\tDependence of the contact resistivity on the long-term temperature treatment of: (a) Ni-based and Pd-based contacts, and (b) Al-based contacts.
Increase of the ageing temperature to 600 0C causes a very small rise of the resistivity of the Au/Al/Si contact. The resistivity of both contacts, Au/AlSiTi and Au/Ti/Al, remain practically the same during the whole time interval at this temperature. During heating at 700 0C, the Au/Al/Si contact resistivity increases continuously to a value of 6.4x10-4 Ω.cm2 measured after the 100th hour. Slight increase of the resistivity from 9.1x10-5 Ω.cm2 to 1.2x10-4 Ω.cm2 is noticed for the Au/AlSiTi contact with the same test. No practical changes in the contact resistivity are detected when the Au/Ti/Al contact is subjected to ageing at 700 0C for 100 hours. The addition of Ti to the contact composition improves its thermal and power properties. This effect is less pronounced in the Au/AlSiTi contacts because of the very small Ti amount in the contact composition. Due to the higher Ti concentration the carbon resulted from the SiC dissociation during annealing is completely consumed and TiC is formed in the contact layer. The absence of C in graphite state is the main factor, which ensures the stability of Au/Ti/Al contact during the ageing up to 700 0C.
\n\t\t\t\tThe resistivity of Ni-based contacts remains practically the same in the whole time interval at these temperatures. Small instability has been observed with Au/Ni contacts after ageing at 600 0C, but the resistivity remains still low. The observed excellent thermal stability of these contacts is due to the formation of the chemically stable interface with the semiconductor and a stable contact composition of Ni2Si.
\n\t\t\t\tIn the temperature-dependence test the measurements have been proceeded at a temperature increasing smoothly from 25 0C to 450 0C in air. This study gives information on the contact reliability at the corresponding operating temperature as the contact resistivity has been measured during the heating. For the temperature-current treatment, a current with a pre-set density of 103 A/cm2 is supplied for a fixed time at a constant temperature (up to 450 0C). This test has been also performed in air and contact resistivity is measured at the corresponding temperature. The results from the two tests are presented in Fig. 13.
\n\t\t\t\tDependence of the contact resistivity on the operating temperature and supplied power of: (a) Ni-based and Pd-based contacts, and (b) Al-based contacts.
Au/Pd/Ti/Pd contacts have demonstrated better stability at operating temperatures in the interval 25 0C – 450 0C in air. For the Au/Pd contacts the contact resistivity decreases twofold as the temperature increased from 25 0C to 450 0C. Similarly, the contact resistivity of the Au/Ti/Al contact decreases with temperature, however at a slow rate. A slow rate decrease is also observed with the Au/AlSiTi contacts from 25 0C to 300 0C. Further temperature increase to 450 0C causes increase of the resistivity of these contacts. However, the resistivity value measured at 450 0C is still lower than this one determined at 25 0C. The resistivity of the Au/Al/Si contact remains practically the same at all temperatures from 25 0C to 450 0C. All Al-based contacts have shown a resistivity decrease when a current with a density of J=103 A/cm2 is supplied during the heating. The Ni-based contacts do not change the resistivity during this treatment. After the test is completed and the samples are cooled down the contact resistivity is measured again at 25 0C. The contact resistivity obtained does not differ from the values measured for each contact type before the test.
\n\t\t\tFor the last years III-nitrides have been received great attention as a material having big potential for short-wave optoelectronic as well as RF and power microelectronic device applications. High electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures are very appropriate for high frequency and high power devices because of the intrinsic material properties such as wide band gap, high breakdown field, and high electron saturated velocity. The low resistivity, excellent reliability at elevated temperatures and good reproducibility of the ohmic contacts are critical factors, which limit the optimum HEMT performance. Besides these requirements, the smooth surface morphology is essential to facilitate sharp edge acuity for short channel devices. Large variety of metal schemes have been proposed and studied as ohmic contacts to AlGaN/GaN HEMTs. Among them Ti/Al-based system has become the conventional widely used ohmic contacts. Such metal scheme could be described as Ti/Al/X(Ni, Ti, Mo, Pd, Pt)/Au.
\n\t\t\tMultilayered Ti/Al/Ti/Au metal films are one of the mostly used metallizations for obtaining ohmic contacts to HEMTs (Fig. 14a) (Kolaklieva et al., 2008). In the device technology, it is known that Al tends to ball up during contact annealing. This behaviour results in a rough surface morphology of the Ti/Al-based contacts. The first Ti layer being in intimate contact with the GaN or AlGaN interface takes essential role in ohmic properties formation during annealing. Besides, during annealing of these contacts Al reacts with Ti forming TixAl1-x alloys, whose presence in the contact contributes to the contact conductivity. Therefore, investigations have been carried out toward a search for the appropriate initial ratio between the former Ti layer and subsequent Al film (Ti/Al) (Fig. 14b), which enables obtaining low resistivity ohmic contacts with a smooth surface.
\n\t\t\tSchemes of: a) a HEMT structure, and b) an as-deposited contact.
I-V characteristics of all as-deposited Ti/Al/Ti/Au metallizations coincide completely because of the same carrier concentration of the upper GaN layer and the same Ti interface metal layer (Fig. 15a) (Kolaklieva et al., 2009). They have a shape typical of the Schottky barrier, which determines the rectifying behaviour of the contacts. After annealing at temperatures higher than 700 0C the I-V characteristics become linear indicating ohmic contact properties. The I-V characteristics of the Ti/Al (30/70 wt.%) and Ti/Al (50/50 wt.%) contacts coincide completely (Fig. 15 b). This result is expectable because these contacts show the same resistivity after annealing at optimal temperature (Fig. 16a). The I-V characteristic of the Ti/Al (70/30 wt.%) contact exhibits smaller slope implying higher resistivity, which is confirmed by the TLM measurements (Fig. 16 a). For the Ti/Al (30/70 wt.%) and Ti/Al (50/50 wt.%) contacts, ohmic properties have been obtained after annealing at a temperature as low as 700 0C, but the contact resistivity is still high, especially for the contact with higher Ti content. For the Ti/Al (70/30 wt.%) contact, ohmic properties have been observed after annealing at 750 0C. The behaviour of the three contact compositions does not differ essentially in character. There is a tendency to shift to higher optimal annealing temperatures with increasing Ti content in the former-Ti/Al layer, which is expectable.
\n\t\t\tI-V characteristics of as-deposited (a) and annealed at optimal temperature (b) Ti/Al/Ti/Au contacts with a different Ti:Al ratio.
Dependence of the resistivity of Ti/Al/Ti/Au contacts with a different Ti/Al ratio on the annealing temperature (a) and operating temperature (b).
The contact resistivity of the Ti/Al (30/70 wt.%) and Ti/Al (50/50 wt.%) contacts decreases smoothly to 800 0C, at which temperature it reaches a minimum value of 4.2x10-5 Ω.cm2 and 4.4x10-5 Ω.cm2, respectively. For the Ti/Al (70/30 wt.%) contact, the lowest resistivity of 5.7x10-4 Ω.cm2 is measured after annealing at 850 0C. Further increase of the annealing temperature causes increase of the contact resistivity. This resistivity increase could be explained by out-diffusion of Ti and Al to the Au layer and their oxidation at the contact surface, which processes are intensified at high temperatures. The presence of aluminium oxide at the surface has been detected by XPS analysis, which confirms this suggestion.
\n\t\t\tThe investigation on the thermal properties of the three types of contact compositions has been performed in air at a temperature increasing smoothly from 25 0C to 400 0C. Obviously, different initial contact composition causes different thermal behaviour (Fig. 16 b). The best stability shows the contact with Ti/Al ratio of 50/50 wt.%. Its resistivity practically does not change up to 350 0C. Both other contact compositions exhibit smooth decrease of the contact resistivity with temperature increase. A fourfold resistivity drop is found to occur over the whole temperature interval for the contact with Ti/Al ratio of 70/30 wt.%, while six fold resistivity drop of the Ti/Al (30/70 wt.%) contact follows heating under the same conditions. This result shows that higher Ti content causes enhanced stability at operating temperatures up to 400 0C in air.
\n\t\t\tAFM measurements (Fig. 17) reveal that the surface strongly roughens upon annealing and randomly distributed hillocks appear in dependence on the Ti/Al ratio. It is found that the root mean square (RMS) roughness and the grain size depend on the Al amount in the contact layer. Higher Al percentage in the former-Ti/Al layer causes rising the roughness. RMS surface roughness of 17.3 nm and 15.9 nm is determined for Ti/Al (30/70 wt.%) and Ti/Al (50/50 wt.%) contacts, respectively, after annealing at 800 0C. Lowering the Al content affects on decrease of the grain size from 180 nm to 140 nm as well. Further increase of the Ti/Al ratio leads to a lower roughness of the surface and a smaller grain size of the contact system, even after annealing at temperatures as high as 850 0C. RMS of 12.8 nm and grain size in the interval 110-130 nm are measured with Ti/Al (70/30 wt.%) contacts. The results obtained from AFM examination of contacts with a varying Ti/Al ratio in the former layer have shown that decrease of the Al content improves the surface morphology. The same effect of the Al content has been observed in ohmic contacts to SiC.
\n\t\t\tAFM 3D image of (5x5) µm2 surface area of a Ti/Al/Ti/Au contacts annealed at optimal temperature with a Ti/Al ratio of: (a) - (30/70) wt.%, (b) - (50/50) wt.% and (c) - (70/30) wt.%.
The different initial Ti/Al ratio and the resulting different annealing temperatures lead to remarkable differences in element distribution and interface chemistry of both ohmic contacts as well. The element depth distributions for the Ti/Al (50/50 wt.%) contact after annealing at 800 0C and Ti/Al (70/30 wt.%) contact after annealing at 850 0C are presented in Fig. 18. The profiles reveal intermixing of Al, Ti, and Au layers. In both contacts, strong Al diffusion to the surface induced by the thermal treatment is observed. The surface region of the Ti/Al (50/50 wt.%) contact consists mainly of Al and Au. Going into the depth a gradual decrease in Al and increase in Au concentrations is detected. The binding energy of Au4f7/2 at 84.6 eV is close to that obtained for AlAu2 alloy. A significant amount of N and smaller amounts of Ga and Ti are found in the region below the gold layers. This is clearly a result of N and Ga outward diffusion towards the surface. Since the measured binding energies of N1s and Ti2p peaks (396.8 eV and 454.8 eV, respectively) correspond to that obtained for TiN, it might be suggested that the diffused N reacts with Ti to form TiN. The depth profile also reveals that during the annealing Al diffuses through the Ti and GaN layers to the interface with AlGaN. The binding energy of Al2s peak here is 119.0 eV, which corresponds to Al in the metal state. At the interface with the AlGaN layer the Al2s peak is broadened and exhibits second maximum at 122.0 eV, which is characteristic of AlGaN. In the surface layers of the Ti/Al (70/30 wt.%) contact predominantly Al in the form of Al2O3 is detected (Fig. 18b). Its concentration sharply decreases going into the depth of the layers. This is followed by a strong increase of the gold concentration, which suggests that the thicker Ti layer is more effective barrier against gold diffusion to the interface. The binding energy value of the Au4f7/2 peak near to the region rich in Al is 84.6 eV but decreases to 84.1 eV, into the depth of the contact. The higher annealing temperature results in enhanced outward diffusion of N and Ga toward the surface. The diffused nitrogen reacts with Ti and forms TiN that is evidenced by the measured binding energies of N1s and Ti2p peaks. The most significant difference as compared to Ti/Al (50/50 wt.%) contact is the higher concentration of Ga in this region (20% vs. 10 %), which is probably due to the higher diffusion rate of gallium at 850 0C.
\n\t\t\tXPS depth profiles of Ti/Al/Ti/Au contacts annealed at optimal temperature with a Ti/Al ratio of: (a) – (50/50) wt. % and (b) – (70/30) wt. %.
The AFM analysis shows improvement of the surface morphology and narrowing the contact periphery with a decrease of the Al amount in the former-Ti/Al layer. The lowest RMS = 12.8 nm of the surface has been achieved for the Ti/Al (70/30 wt.%) contact after annealing at 850 0C. However, the higher annealing temperature enhanced the interdiffusion of the components and the tendency to oxidation of Ti and Al. As a result this contact composition exhibits the worst contact resistivity. Consequently, a compromise regarding the choice of the appropriate composition for ohmic contact to GaN/GaAlN HEMT structures should be made.
\n\t\tThe study of ohmic contacts to wide band-gap semiconductors proves that when metal/semiconductor contacts are deposited, they commonly result in rectifying Schottky contacts which barrier height inhibits current flow across the metal/semiconductor interface. There are four primary variables which control the Schottky barrier height at metal/semiconductor interfaces: the work function
On the basis of XPS data the following mechanism of chemical reactions occurring during the formation of ohmic properties may be proposed. In the case of Ni/SiC the contact formation is initiated by the dissociation of SiC surface, due to the strong reactivity of Ni at 950 0C. The nickel atoms at the interface interact with a part of dissociated Si atoms and Ni2Si is formed. Simultaneously, at the interface nickel atoms diffuse through the mixed Ni2Si+C layer towards the SiC. Thus, the supply of Ni atoms at the SiC interface continues and the above reactions are repeated to the complete consumption of the deposited nickel layer. Carbon accumulates, both at the interface and in the contact layer. The presence of carbon in the contact layer and at the interface could become a potential source of contact degradation at very high temperatures. When Ni/Si multilayers (instead of pure Ni) are deposited on SiC, the contact formation is preceded by Ni and Si mutual diffusion in the deposited layer yielding Ni2Si. The presence of Ni atoms at the interface is a reason for dissociation of SiC to Si and C, after which Ni atoms are bonded to the free Si atoms and form Ni2Si along with carbon in the graphite state. A smaller amount of carbon is observed at the interface. Low carbon segregation at the interface and an abrupt interface characterise this contact. The mechanism of Ni-based ohmic contact formation is illustrated in Fig. 19. The calculations are made on the base of the measured forward I-V characteristic for the as-deposited contact and the thermionic-field emission transport mechanism in the annealed contacts at doping concentration of 1x1019 cm-3, T=298 K and an effective electron mass m*\n\t\t\t\tn=0.206m0 (Kassamakova-Kolaklieva, 1999).
\n\t\t\tEnergy band diagram of unannealed (a) and annealed at 950 0C (b) Ni/n-type 4H-SiC interface.
Annealing of the interface in Pd-based contacts also causes partial dissociation of SiC to Si and C. As a result of this process, the SiC interface is shifted into the SiC bulk since a part of the original interface is consumed. The free Si atoms interact with Pd to form Pd2Si in the interface near region and Pd3Si in the more remote contact layer. The formation of these compounds at the interface and in the contact layer, respectively, has been observed for all Pd-based contacts. Consequently, the presence of Pd2Si at the interface leads to reduction of the barrier height and appearance of ohmic properties, i.e. again lowering the barrier height is realised by silicide formation at the interface (Fig. 20) (Kassamakova-Kolaklieva, 1999).
\n\t\t\tEnergy band diagram of unannealed (a) and annealed (b) Pd/p-type 4H-SiC interface.
The origin of ohmic properties of Al-based ohmic contacts to 4H-SiC depends strongly on the contact composition and annealing temperature. There is no the same mechanism for ohmic properties formation. The low annealing temperature of the Al/Si/SiC contacts decreases the interdiffusion/chemical reaction processes because the dissociation of SiC surface is poor at 700 0C. In addition, the Si layer, deposited on the substrate surface, acts as a barrier for aluminium diffusion. As a result, Al in metal state only is established in the XPS spectra of the Al/Si contacts annealed at this temperature. After ageing of Al/Si contacts at 600 0C for 48 hours areas without a metal film on the contact pads could be seen, suggesting that a part of undiffused Al from the annealed contact layer evaporates during the long term heating, resulting in temperature instability. The increase of the annealing temperature in the AlSiTi contact stimulates a higher interdiffusion/chemical reaction of Al with SiC. Due to the catalytic effect of Al at elevated temperatures SiC dissociation occurs at the metal/SiC interface. The undiffused Al atoms of the contact layer react entirely with the carbon forming a stable compound, Al4C3. Indeed, the presence of chemical stable Al4C3 compound and the absence of Al in metal state are prerequisite for the improved thermal stability of AlSiTi contacts at high ageing temperatures (Kassamakova et al., 2001). In the case of Au/Ti/Al contacts strong dependence of the contact structure on the Ti:Al ratio and annealing temperature, respectively, has been found out. The TEM analysis reveals that titanium and aluminium silicides and carbides are formed after annealing at 900 0C irrespective of the Ti:Al ratio. However, the Ti:Al ratio affect the kind of silicides and carbides created. In the contact with a Ti:Al ratio of 70:30 Ti3SiC2 and TiSi are formed. Although Ti is not in the contact with SiC in the as-deposited structure, it could diffuse through the melted aluminium very fast and reacts with SiC, which is resolved at presence of the molten Al. As a result, the rich on carbon Ti3SiC2 phase is formed. The excess Si reacts with Ti to form TiSi and Ti5Si3 depending on the Ti amount in the initial contact film. Higher Al content in the initial contact, lower Ti:Al ratio respectively, hinders the formation of ternary Ti3SiC2 compound and favours the reactions leading to the formation of binary compounds. Obviously, the higher Al amount makes it more reactive to the carbon than Ti and AlC4 is detected. In the case of the Au/Ti(70%)/Al(30%) contact the origin of ohmic properties is the formation of ternary Ti3SiC2 compound at the interface, which is known to exhibit advantageous metallic properties. However, this compound is not detected in the annealed Au/Ti(30%)/Al(70%) contacts. XPS analysis of this contact has revealed a slight diffusion of Al into the SiC surface after annealing at 1000 0C. It could be supposed, in analogy with the Ti-Al alloyed contacts with the same Al percentage content and annealed at the same temperature (Crofton et al., 1993) that in the annealed Ti/Al layered contacts Al is also distributed like spikes near the SiC surface. Resistivity improvement of the Au/Ti(30%)/Al(70%) contacts after annealing at 1000 0C is due to the Al spikes into SiC. Hence, the origin of the ohmic properties improvement could be explained by the formation of Ti3SiC2 compound and enhanced carrier transport by the presence of metal spikes into SiC depending on the initial contact composition and as consequence the optimal annealing temperature (Kolaklieva et al., 2007).
\n\t\t\tIn the case of Ti/Al-based contacts the first Ti layer being in intimate contact with the GaN (or AlGaN) interface takes essential role in ohmic properties formation during annealing. The formation of TixN at the interface is considered important for ohmic behaviour obtaining. TixN can be grown at the interface between the multilayered metallization by interfacial reactions at temperatures ranging from 250 C (furnace anneal) to 900 C (rapid thermal anneal). The presence of TiN at the interface, with a theoretically predictable work function of 3.74 eV and reasonable electrical conductivities, decreases the barrier height and ohmic properties have been obtained. The formation of ТiN at the interface metal /GaN creates nitrogen vacancies in the GaN substrate. These vacancies act as shallow donors, which enhance the doping level at the interface and decrease the width of the depletion layer resulting in decrease of the contact resistivity.
\n\t\t\tIt should be pointed out that besides the interfacial compound, additional alloys and compounds are formed in the contact layer during annealing, which presence aids the better contact conductivity. Obviously, their composition determines by the contact composition before annealing, semiconductor composition and the annealing temperature. Nevertheless, the interfacial reactions are critical to the formation of ohmic contacts on semiconductors, whether they have a large or a small band-gap.
\n\t\tThis is a brief overview of the main steps involved in publishing with IntechOpen Compacts, Monographs and Edited Books. Once you submit your proposal you will be appointed a Author Service Manager who will be your single point of contact and lead you through all the described steps below.
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\\n\\nWe will send you your price quote and after it has been accepted (by both the author and the publisher), both parties will sign a Statement of Work binding them to adhere to the agreed upon terms.
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\\n\\nYour manuscript will be sent to Straive, a leader in content solution services, for language copyediting. You will then receive a typeset proof formatted in XML and available online in HTML and PDF to proofread and check for completeness. The first typeset proof of your manuscript is usually available 10 days after its original submission.
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\\n\\nIf you feel that IntechOpen Compacts, Monographs or Edited Books are the right publishing format for your work, please fill out the publishing proposal form. For any specific queries related to the publishing process, or IntechOpen Compacts, Monographs & Edited Books in general, please contact us at book.department@intechopen.com
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\n\nPlease complete the publishing proposal form. The completed form should serve as an overview of your future Compacts, Monograph or Edited Book. Once submitted, your publishing proposal will be sent for evaluation, and a notice of acceptance or rejection will be sent within 10 to 30 working days from the date of submission.
\n\n2. SUBMIT YOUR MANUSCRIPT
\n\nAfter approval, you will proceed in submitting your full-length manuscript. 50-130 pages for compacts, 130-500 for Monographs & Edited Books.Your full-length manuscript must follow IntechOpen's Author Guidelines and comply with our publishing rules. Once the manuscript is submitted, but before it is forwarded for peer review, it will be screened for plagiarism.
\n\n3. PEER REVIEW RESULTS
\n\nExternal reviewers will evaluate your manuscript and provide you with their feedback. You may be asked to revise your draft, or parts of your draft, provide additional information and make any other necessary changes according to their comments and suggestions.
\n\n4. ACCEPTANCE AND PRICE QUOTE
\n\nIf the manuscript is formally accepted after peer review you will receive a formal Notice of Acceptance, and a price quote.
\n\nThe Open Access Publishing Fee of your IntechOpen Compacts, Monograph or Edited Book depends on the volume of the publication and includes: project management, editorial and peer review services, technical editing, language copyediting, cover design and book layout, book promotion and ISBN assignment.
\n\nWe will send you your price quote and after it has been accepted (by both the author and the publisher), both parties will sign a Statement of Work binding them to adhere to the agreed upon terms.
\n\nAt this step you will also be asked to accept the Copyright Agreement.
\n\n5. LANGUAGE COPYEDITING, TECHNICAL EDITING AND TYPESET PROOF
\n\nYour manuscript will be sent to Straive, a leader in content solution services, for language copyediting. You will then receive a typeset proof formatted in XML and available online in HTML and PDF to proofread and check for completeness. The first typeset proof of your manuscript is usually available 10 days after its original submission.
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\n\nIntechOpen will help you complete your payment safely and securely, keeping your personal, professional and financial information safe.
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\n\nIf you feel that IntechOpen Compacts, Monographs or Edited Books are the right publishing format for your work, please fill out the publishing proposal form. For any specific queries related to the publishing process, or IntechOpen Compacts, Monographs & Edited Books in general, please contact us at book.department@intechopen.com
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His studies in robotics lead him not only to a PhD degree but also inspired him to co-found and build the International Journal of Advanced Robotic Systems - world's first Open Access journal in the field of robotics.",institutionString:null,institution:{name:"TU Wien",country:{name:"Austria"}}},{id:"441",title:"Ph.D.",name:"Jaekyu",middleName:null,surname:"Park",slug:"jaekyu-park",fullName:"Jaekyu Park",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/441/images/1881_n.jpg",biography:null,institutionString:null,institution:{name:"LG Corporation (South Korea)",country:{name:"Korea, South"}}},{id:"465",title:"Dr",name:"Christian",middleName:null,surname:"Martens",slug:"christian-martens",fullName:"Christian Martens",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"479",title:"Dr.",name:"Valentina",middleName:null,surname:"Colla",slug:"valentina-colla",fullName:"Valentina Colla",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/479/images/358_n.jpg",biography:null,institutionString:null,institution:{name:"Sant'Anna School of Advanced Studies",country:{name:"Italy"}}},{id:"494",title:"PhD",name:"Loris",middleName:null,surname:"Nanni",slug:"loris-nanni",fullName:"Loris Nanni",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/494/images/system/494.jpg",biography:"Loris Nanni received his Master Degree cum laude on June-2002 from the University of Bologna, and the April 26th 2006 he received his Ph.D. in Computer Engineering at DEIS, University of Bologna. On September, 29th 2006 he has won a post PhD fellowship from the university of Bologna (from October 2006 to October 2008), at the competitive examination he was ranked first in the industrial engineering area. He extensively served as referee for several international journals. He is author/coauthor of more than 100 research papers. He has been involved in some projects supported by MURST and European Community. His research interests include pattern recognition, bioinformatics, and biometric systems (fingerprint classification and recognition, signature verification, face recognition).",institutionString:null,institution:null},{id:"496",title:"Dr.",name:"Carlos",middleName:null,surname:"Leon",slug:"carlos-leon",fullName:"Carlos Leon",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Seville",country:{name:"Spain"}}},{id:"512",title:"Dr.",name:"Dayang",middleName:null,surname:"Jawawi",slug:"dayang-jawawi",fullName:"Dayang Jawawi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Technology Malaysia",country:{name:"Malaysia"}}},{id:"528",title:"Dr.",name:"Kresimir",middleName:null,surname:"Delac",slug:"kresimir-delac",fullName:"Kresimir Delac",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/528/images/system/528.jpg",biography:"K. Delac received his B.Sc.E.E. degree in 2003 and is currentlypursuing a Ph.D. degree at the University of Zagreb, Faculty of Electrical Engineering andComputing. His current research interests are digital image analysis, pattern recognition andbiometrics.",institutionString:null,institution:{name:"University of Zagreb",country:{name:"Croatia"}}},{id:"557",title:"Dr.",name:"Andon",middleName:"Venelinov",surname:"Topalov",slug:"andon-topalov",fullName:"Andon Topalov",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/557/images/1927_n.jpg",biography:"Dr. Andon V. Topalov received the MSc degree in Control Engineering from the Faculty of Information Systems, Technologies, and Automation at Moscow State University of Civil Engineering (MGGU) in 1979. He then received his PhD degree in Control Engineering from the Department of Automation and Remote Control at Moscow State Mining University (MGSU), Moscow, in 1984. From 1985 to 1986, he was a Research Fellow in the Research Institute for Electronic Equipment, ZZU AD, Plovdiv, Bulgaria. In 1986, he joined the Department of Control Systems, Technical University of Sofia at the Plovdiv campus, where he is presently a Full Professor. He has held long-term visiting Professor/Scholar positions at various institutions in South Korea, Turkey, Mexico, Greece, Belgium, UK, and Germany. And he has coauthored one book and authored or coauthored more than 80 research papers in conference proceedings and journals. His current research interests are in the fields of intelligent control and robotics.",institutionString:null,institution:{name:"Technical University of Sofia",country:{name:"Bulgaria"}}},{id:"585",title:"Prof.",name:"Munir",middleName:null,surname:"Merdan",slug:"munir-merdan",fullName:"Munir Merdan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/585/images/system/585.jpg",biography:"Munir Merdan received the M.Sc. degree in mechanical engineering from the Technical University of Sarajevo, Bosnia and Herzegovina, in 2001, and the Ph.D. degree in electrical engineering from the Vienna University of Technology, Vienna, Austria, in 2009.Since 2005, he has been at the Automation and Control Institute, Vienna University of Technology, where he is currently a Senior Researcher. His research interests include the application of agent technology for achieving agile control in the manufacturing environment.",institutionString:null,institution:null},{id:"605",title:"Prof",name:"Dil",middleName:null,surname:"Hussain",slug:"dil-hussain",fullName:"Dil Hussain",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/605/images/system/605.jpg",biography:"Dr. Dil Muhammad Akbar Hussain is a professor of Electronics Engineering & Computer Science at the Department of Energy Technology, Aalborg University Denmark. Professor Akbar has a Master degree in Digital Electronics from Govt. College University, Lahore Pakistan and a P-hD degree in Control Engineering from the School of Engineering and Applied Sciences, University of Sussex United Kingdom. Aalborg University has Two Satellite Campuses, one in Copenhagen (Aalborg University Copenhagen) and the other in Esbjerg (Aalborg University Esbjerg).\n· He is a member of prestigious IEEE (Institute of Electrical and Electronics Engineers), and IAENG (International Association of Engineers) organizations. \n· He is the chief Editor of the Journal of Software Engineering.\n· He is the member of the Editorial Board of International Journal of Computer Science and Software Technology (IJCSST) and International Journal of Computer Engineering and Information Technology. \n· He is also the Editor of Communication in Computer and Information Science CCIS-20 by Springer.\n· Reviewer For Many Conferences\nHe is the lead person in making collaboration agreements between Aalborg University and many universities of Pakistan, for which the MOU’s (Memorandum of Understanding) have been signed.\nProfessor Akbar is working in Academia since 1990, he started his career as a Lab demonstrator/TA at the University of Sussex. After finishing his P. hD degree in 1992, he served in the Industry as a Scientific Officer and continued his academic career as a visiting scholar for a number of educational institutions. In 1996 he joined National University of Science & Technology Pakistan (NUST) as an Associate Professor; NUST is one of the top few universities in Pakistan. In 1999 he joined an International Company Lineo Inc, Canada as Manager Compiler Group, where he headed the group for developing Compiler Tool Chain and Porting of Operating Systems for the BLACKfin processor. The processor development was a joint venture by Intel and Analog Devices. In 2002 Lineo Inc., was taken over by another company, so he joined Aalborg University Denmark as an Assistant Professor.\nProfessor Akbar has truly a multi-disciplined career and he continued his legacy and making progress in many areas of his interests both in teaching and research. He has contributed in stochastic estimation of control area especially, in the Multiple Target Tracking and Interactive Multiple Model (IMM) research, Ball & Beam Control Problem, Robotics, Levitation Control. He has contributed in developing Algorithms for Fingerprint Matching, Computer Vision and Face Recognition. He has been supervising Pattern Recognition, Formal Languages and Distributed Processing projects for several years. He has reviewed many books on Management, Computer Science. Currently, he is an active and permanent reviewer for many international conferences and symposia and the program committee member for many international conferences.\nIn teaching he has taught the core computer science subjects like, Digital Design, Real Time Embedded System Programming, Operating Systems, Software Engineering, Data Structures, Databases, Compiler Construction. 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Abdurakhmonov"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"11332",title:"Essential Oils",subtitle:"Advances in Extractions and Biological Applications",isOpenForSubmission:!1,hash:"742e6cae3a35686f975edc8d7f9afa94",slug:"essential-oils-advances-in-extractions-and-biological-applications",bookSignature:"Mozaniel Santana de Oliveira and Eloisa Helena de Aguiar Andrade",coverURL:"https://cdn.intechopen.com/books/images_new/11332.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"195290",title:"Ph.D.",name:"Mozaniel",middleName:null,surname:"Santana De Oliveira",slug:"mozaniel-santana-de-oliveira",fullName:"Mozaniel Santana De Oliveira"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"11080",title:"Engineering Principles",subtitle:"Welding and Residual Stresses",isOpenForSubmission:!1,hash:"6c07a13a113bce94174b40096f30fb5e",slug:"engineering-principles-welding-and-residual-stresses",bookSignature:"Kavian Omar Cooke and Ronaldo Câmara Cozza",coverURL:"https://cdn.intechopen.com/books/images_new/11080.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"138778",title:"Dr.",name:"Kavian",middleName:"Omar",surname:"Cooke",slug:"kavian-cooke",fullName:"Kavian Cooke"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"10839",title:"Protein Detection",subtitle:null,isOpenForSubmission:!1,hash:"2f1c0e4e0207fc45c936e7d22a5369c4",slug:"protein-detection",bookSignature:"Yusuf Tutar and Lütfi Tutar",coverURL:"https://cdn.intechopen.com/books/images_new/10839.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"158492",title:"Prof.",name:"Yusuf",middleName:null,surname:"Tutar",slug:"yusuf-tutar",fullName:"Yusuf Tutar"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"10858",title:"MOOC (Massive Open Online Courses)",subtitle:null,isOpenForSubmission:!1,hash:"d32f86793bc72dde32532f509b1ec5b0",slug:"mooc-massive-open-online-courses-",bookSignature:"Dragan Cvetković",coverURL:"https://cdn.intechopen.com/books/images_new/10858.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"101330",title:"Dr.",name:"Dragan",middleName:"Mladen",surname:"Cvetković",slug:"dragan-cvetkovic",fullName:"Dragan Cvetković"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"11371",title:"Cerebral Circulation",subtitle:"Updates on Models, Diagnostics and Treatments of Related Diseases",isOpenForSubmission:!1,hash:"e2d3335445d2852d0b906bb9750e939f",slug:"cerebral-circulation-updates-on-models-diagnostics-and-treatments-of-related-diseases",bookSignature:"Alba Scerrati, Luca Ricciardi and Flavia Dones",coverURL:"https://cdn.intechopen.com/books/images_new/11371.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"182614",title:"Dr.",name:"Alba",middleName:null,surname:"Scerrati",slug:"alba-scerrati",fullName:"Alba Scerrati"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"11120",title:"Environmental Impact and Remediation of Heavy Metals",subtitle:null,isOpenForSubmission:!1,hash:"9e77514288e7394f1e6cd13481af3509",slug:"environmental-impact-and-remediation-of-heavy-metals",bookSignature:"Hosam M. Saleh and Amal I. Hassan",coverURL:"https://cdn.intechopen.com/books/images_new/11120.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"144691",title:"Prof.",name:"Hosam M.",middleName:null,surname:"Saleh",slug:"hosam-m.-saleh",fullName:"Hosam M. Saleh"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"10696",title:"Applications of Calorimetry",subtitle:null,isOpenForSubmission:!1,hash:"8c87f7e2199db33b5dd7181f56973a97",slug:"applications-of-calorimetry",bookSignature:"José Luis Rivera Armenta and Cynthia Graciela Flores Hernández",coverURL:"https://cdn.intechopen.com/books/images_new/10696.jpg",editedByType:"Edited by",publishedDate:"June 23rd 2022",editors:[{id:"107855",title:"Dr.",name:"Jose Luis",middleName:null,surname:"Rivera Armenta",slug:"jose-luis-rivera-armenta",fullName:"Jose Luis Rivera Armenta"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}]},subject:{topic:{id:"1124",title:"Pediatric Rehabilitation Medicine",slug:"pediatric-rehabilitation-medicine",parent:{id:"197",title:"Physical Medicine and Rehabilitation",slug:"physical-medicine-and-rehabilitation"},numberOfBooks:2,numberOfSeries:0,numberOfAuthorsAndEditors:48,numberOfWosCitations:15,numberOfCrossrefCitations:20,numberOfDimensionsCitations:35,videoUrl:null,fallbackUrl:null,description:null},booksByTopicFilter:{topicId:"1124",sort:"-publishedDate",limit:12,offset:0},booksByTopicCollection:[{type:"book",id:"7072",title:"Cerebral Palsy",subtitle:"Clinical and Therapeutic Aspects",isOpenForSubmission:!1,hash:"eebd6581cd862f95edfacb284191e1c5",slug:"cerebral-palsy-clinical-and-therapeutic-aspects",bookSignature:"Isam Jaber Al-Zwaini",coverURL:"https://cdn.intechopen.com/books/images_new/7072.jpg",editedByType:"Edited by",editors:[{id:"30993",title:"Prof.",name:"Isam Jaber",middleName:null,surname:"Al-Zwaini",slug:"isam-jaber-al-zwaini",fullName:"Isam Jaber Al-Zwaini"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"5203",title:"Recovery of Motor Function Following Spinal Cord Injury",subtitle:null,isOpenForSubmission:!1,hash:"8c1d0a0fb7465d107de2089e21227ad8",slug:"recovery-of-motor-function-following-spinal-cord-injury",bookSignature:"Heidi Fuller and Monte Gates",coverURL:"https://cdn.intechopen.com/books/images_new/5203.jpg",editedByType:"Edited by",editors:[{id:"87307",title:"Dr.",name:"Heidi",middleName:null,surname:"Fuller",slug:"heidi-fuller",fullName:"Heidi Fuller"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}],booksByTopicTotal:2,seriesByTopicCollection:[],seriesByTopicTotal:0,mostCitedChapters:[{id:"50997",doi:"10.5772/63759",title:"Normal Distribution and Plasticity of Serotonin Receptors after Spinal Cord Injury and Their Impacts on Motor Outputs",slug:"normal-distribution-and-plasticity-of-serotonin-receptors-after-spinal-cord-injury-and-their-impacts",totalDownloads:1619,totalCrossrefCites:7,totalDimensionsCites:9,abstract:"Following spinal cord injury (SCI) a series of anatomical and functional plastic changes occur in the spinal cord, including reorganization of the spinal neuronal network, alteration of properties of interneurons and motoneurons as well as up- or down-regulation of different neurotransmitter receptors. In mammalian spinal cord, one of the important neurotransmitters, serotonin (5-HT), plays an essential role in modulating sensory, motor and autonomic functions. Following SCI, especially complete spinal cord lesion, the descending supply of 5-HT is lost. As a consequence different 5-HT receptors undergo variant degrees of plastic changes.",book:{id:"5203",slug:"recovery-of-motor-function-following-spinal-cord-injury",title:"Recovery of Motor Function Following Spinal Cord Injury",fullTitle:"Recovery of Motor Function Following Spinal Cord Injury"},signatures:"Mengliang Zhang",authors:[{id:"180492",title:"Dr.",name:"Mengliang",middleName:null,surname:"Zhang",slug:"mengliang-zhang",fullName:"Mengliang Zhang"}]},{id:"50752",doi:"10.5772/62947",title:"Experimental Spinal Cord Injury Models in Rodents: Anatomical Correlations and Assessment of Motor Recovery",slug:"experimental-spinal-cord-injury-models-in-rodents-anatomical-correlations-and-assessment-of-motor-re",totalDownloads:2461,totalCrossrefCites:1,totalDimensionsCites:6,abstract:"Human traumatic spinal cord injury (SCI) causes disruption of descending motor and ascending sensory tracts, which leads to severe disturbances in motor functions. To date, no standard therapy for the regeneration of severed spinal cord axons in humans exists. Experimental SCI in rodents is essential for the development of new treatment strategies and for understanding the underlying mechanisms leading to motor recovery. Here, we provide an overview of the main rodent models and techniques available for the investigation of neuronal regeneration and motor recovery after experimental SCI.",book:{id:"5203",slug:"recovery-of-motor-function-following-spinal-cord-injury",title:"Recovery of Motor Function Following Spinal Cord Injury",fullTitle:"Recovery of Motor Function Following Spinal Cord Injury"},signatures:"Christina F. Vogelaar and Veronica Estrada",authors:[{id:"180296",title:"Dr.",name:"Christina Francisca",middleName:null,surname:"Vogelaar",slug:"christina-francisca-vogelaar",fullName:"Christina Francisca Vogelaar"},{id:"185622",title:"Dr.",name:"Veronica",middleName:null,surname:"Estrada",slug:"veronica-estrada",fullName:"Veronica Estrada"}]},{id:"50957",doi:"10.5772/63459",title:"In Vitro Models of Spinal Cord Injury",slug:"in-vitro-models-of-spinal-cord-injury",totalDownloads:2659,totalCrossrefCites:1,totalDimensionsCites:4,abstract:"Living organisms are extremely complex functional systems. At present, there are many in vivo models of spinal cord injury (SCI) that allow the modeling of any type of central nervous system (CNS) injury, however, with some disadvantages. The production of injury models can be a highly invasive and time‐consuming process and requires high technical requirements, and costly financial issues should also be taken into account. Of course, a large number of animals have been used to obtain the relevant data of statistical significance. All of these aspects can be reduced by carrying out experiments in in vitro conditions. The primary advantage of in vitro method is that it simplifies the system under study. There are two major groups of in vitro model in use: cell culture and organotypic slice (OTS) culture. OTS is an intermediate system of the screening of in vitro cell culture and animal models and represents the in vitro system preserving the basic tissue architecture that able to closely mimic the cellular and physiological characteristics in vivo. In vitro models are the preferred methods for the study of acute or subacute pathophysiology after a trauma stimulus, enabling precise control on the extracellular environment, easy and repeatable access to the cells.",book:{id:"5203",slug:"recovery-of-motor-function-following-spinal-cord-injury",title:"Recovery of Motor Function Following Spinal Cord Injury",fullTitle:"Recovery of Motor Function Following Spinal Cord Injury"},signatures:"Lucia Slovinska, Juraj Blasko, Miriam Nagyova, Eva Szekiova and\nDasa Cizkova",authors:[{id:"83943",title:"Dr.",name:"Dasa",middleName:null,surname:"Cizkova",slug:"dasa-cizkova",fullName:"Dasa Cizkova"},{id:"90290",title:"Dr.",name:"Lucia",middleName:null,surname:"Slovinska",slug:"lucia-slovinska",fullName:"Lucia Slovinska"},{id:"185974",title:"Dr.",name:"Juraj",middleName:null,surname:"Blasko",slug:"juraj-blasko",fullName:"Juraj Blasko"},{id:"189135",title:"Dr.",name:"Miriam",middleName:null,surname:"Nagyova",slug:"miriam-nagyova",fullName:"Miriam Nagyova"},{id:"189136",title:"Dr.",name:"Eva",middleName:null,surname:"Szekiova",slug:"eva-szekiova",fullName:"Eva Szekiova"}]},{id:"51367",doi:"10.5772/64182",title:"Emerging Techniques for Assessment of Sensorimotor Impairments after Spinal Cord Injury",slug:"emerging-techniques-for-assessment-of-sensorimotor-impairments-after-spinal-cord-injury",totalDownloads:1558,totalCrossrefCites:2,totalDimensionsCites:2,abstract:"Gait function can be altered after incomplete spinal cord (iSCI) lesions. Muscular weakness, co‐activation of antagonist muscles, and altered muscle mechanics are likely to provoke abnormal gait and postural movements. Functional scales are available for assessment of functional walking in SCI patients, such as walking index for spinal cord injury (WISCI II), timed up and go (TUG) test, 10‐meter walk test (10MWT), and 6‐minute walk test (6MWT). Novel metrics for a more detailed comprehension of neuromuscular control in terms of degree of voluntary motor control have been recently proposed. This section describes novel techniques based on muscle synergy and frequency domain analysis of electromyographic signals. Such techniques are illustrated as potential tools for assessment of motor function after SCI with experimental data and a case study describing a diagnostic scenario. This chapter presents a discussion of the current status of the emerging metrics for assessment of sensorimotor impairments. Conclusions are given with respect to the availability of enriched information about neuromuscular behavior between functional tasks (walking and pedalling) and the potential relevance of these new techniques to improve the efficacy of treatment to improve locomotion after iSCI.",book:{id:"5203",slug:"recovery-of-motor-function-following-spinal-cord-injury",title:"Recovery of Motor Function Following Spinal Cord Injury",fullTitle:"Recovery of Motor Function Following Spinal Cord Injury"},signatures:"Filipe Barroso, Diego Torricelli and Juan C. Moreno",authors:[{id:"180150",title:"Dr.",name:"Juan",middleName:null,surname:"Moreno",slug:"juan-moreno",fullName:"Juan Moreno"},{id:"187371",title:"Dr.",name:"Diego",middleName:null,surname:"Torricelli",slug:"diego-torricelli",fullName:"Diego Torricelli"},{id:"187372",title:"Ph.D.",name:"Filipe",middleName:"Oliveira",surname:"Barroso",slug:"filipe-barroso",fullName:"Filipe Barroso"}]},{id:"51483",doi:"10.5772/64211",title:"Bridging Defects in Chronic Spinal Cord Injury Using Peripheral Nerve Grafts: From Basic Science to Clinical Experience",slug:"bridging-defects-in-chronic-spinal-cord-injury-using-peripheral-nerve-grafts-from-basic-science-to-c",totalDownloads:1446,totalCrossrefCites:2,totalDimensionsCites:2,abstract:"Nerve grafting of the injured spinal cord should pursue a sixfold attack: lysing the fibrosis/gliosis to an extent that allows settling of the basal lamina preventing meanwhile collapse of the neural tissue matrix; supplying the tissue matrix with a suitable scaffold, on which the basal lamina can settle; basal lamina synthesis; seeding the basal lamina with cell adhesion molecules; providing the axonal growth cone with neurite outgrowth promoting factors that allow its distal progression; supplying the axonal growth cone with neurotrophic factors that power its continued growth. In addition to this, the intrinsic properties of the neurons should be stimulated, possibly through modulating the function of astrocytes by heparin, aspirin and other factors. Nerve side grafting of the cord increases the incidence of nerve regeneration by applying additional grafts extending from the side of the donor end of the cord to the side of the recipient end. Also, it allows the surgeon to enhance regeneration through a partially regenerated cord. During surgery, after establishment of CSF circulation, a long-lasting indwelling catheter has to be inserted for postoperative drug and cell delivery. This allows for continual lysis of the gliosis by chondroitinase ABC, sialidase and other factors.",book:{id:"5203",slug:"recovery-of-motor-function-following-spinal-cord-injury",title:"Recovery of Motor Function Following Spinal Cord Injury",fullTitle:"Recovery of Motor Function Following Spinal Cord Injury"},signatures:"Sherif M. Amr",authors:[{id:"179930",title:"Prof.",name:"Sherif",middleName:null,surname:"Amr",slug:"sherif-amr",fullName:"Sherif Amr"}]}],mostDownloadedChaptersLast30Days:[{id:"63463",title:"Clinical Classification of Cerebral Palsy",slug:"clinical-classification-of-cerebral-palsy",totalDownloads:2605,totalCrossrefCites:1,totalDimensionsCites:2,abstract:"The classification of cerebral palsy (CP) remains a challenge; hence the presence of so many classifications and a lack of consensus. Each classification used alone is incomplete. Therefore, a multiaxial classification gives a more comprehensive description of a child with CP. The recent WHO International Classification of Functioning, Disability and Health (ICF) emphasizes the importance of focusing on the functional consequences of various states of health and has stimulated the development of newer functional scales in CP. It is widely accepted that the functional classification is the best classification for the patient because it guides management. The objectives of this chapter are to review the various classifications of CP, to highlight the clinical features used in the various classifications, to outline the recent functional classifications of CP and to highlight how these recent classifications guide current management. It is expected that at the end of this chapter, the reader should be able to understand the difficulties in classifying CP, enumerate and discuss the various classifications of CP, understand the merits and shortcomings of each classification scheme, clinically evaluate and classify a child with CP multiaxially and understand how functional scales predict current and future needs of children with CP.",book:{id:"7072",slug:"cerebral-palsy-clinical-and-therapeutic-aspects",title:"Cerebral Palsy",fullTitle:"Cerebral Palsy - Clinical and Therapeutic Aspects"},signatures:"Christian Chukwukere Ogoke",authors:[{id:"250398",title:"Dr.",name:"Christian",middleName:"Chukwukere",surname:"Ogoke",slug:"christian-ogoke",fullName:"Christian Ogoke"}]},{id:"62532",title:"Early Markers for Cerebral Palsy",slug:"early-markers-for-cerebral-palsy",totalDownloads:1330,totalCrossrefCites:0,totalDimensionsCites:0,abstract:"Cerebral palsy (CP) is a term referring to a nonprogressive disease of the brain originating during the antenatal, neonatal, or early postnatal period when brain neuronal connections are still evolving. Secondary effects of spasticity on growth may, however, be progressive. There may be additional disturbances of sensation, perception, cognition, communication, and behavior. Babies who are neurologically abnormal as newborns are at increased risk of neurologic abnormality in later months and years. Being born preterm (born <37 weeks of gestation) or with a very low birth weight (weighing <1500 g/<32 weeks of gestation) or extreme low birth weight (<1000 g/<28 weeks of gestation) is associated with significant motor impairment. Which specific signs in the neonate are of greatest predictive power, what long-term disability these signs predict, and how well they predict it remain unclear? Physician’s major concern is to identify specific risk factors for severe impairment in early infancy so as to predict the developmental outcome of those children that may manifest later on with neurological deficit especially if they have perinatal insult. Parents on the other hand are also concerned about their growing infants, their development, and neurological outcome. Since cerebral palsy is a permanent disorder, early detection of signs of motor impairment is crucial to assist physicians to give close follow-up of those infants and to reassure parents whose children are normal. It has been shown that intervention may be most efficient when the plasticity of the brain is high, and an early detection of brain impairment is therefore crucial. An earlier follow-up and training program can have a positive effect of the motor development of the child with CP, in particular through prevention of limb contractions, and might make a difference in the child’s ability to handle everyday challenges. In addition, an early detection of CP gives the parents more time for adjustment and preparation. Since clinical manifestations of cerebral palsy do not emerge before a child is at least 6 months, the general movement (GM) is considered the most reliable early markers for monitoring of fetal and infant movement. Abnormal General movements and absence of the so-called fidgety movements at 3-5 months post-term carries a high risk of developing cerebral palsy. Beside a high specificity (82–99%) and sensitivity (95–100%), the assessment of the general movements (GMs) is quick, nonintrusive, and easy to acquire.",book:{id:"7072",slug:"cerebral-palsy-clinical-and-therapeutic-aspects",title:"Cerebral Palsy",fullTitle:"Cerebral Palsy - Clinical and Therapeutic Aspects"},signatures:"Ali A. Al-Mayahi",authors:[{id:"252661",title:"Associate Prof.",name:"Ali",middleName:null,surname:"Al-Mayahi",slug:"ali-al-mayahi",fullName:"Ali Al-Mayahi"}]},{id:"64318",title:"Hip Surgery in Cerebral Palsy",slug:"hip-surgery-in-cerebral-palsy",totalDownloads:1244,totalCrossrefCites:0,totalDimensionsCites:0,abstract:"Hip pathology is one of the main orthopedic concerns in cerebral palsy (CP) patients. It has been demonstrated that correctly applied hip screening programs could significantly diminish the incidence of hip pathology. Unfortunately, in several countries, hip dislocation is significantly prevalent and is still a major concern in these patients. Depending on the age, the disability grade, the rehabilitation support, and the surgical strategies, results of hip treatment are variable. The ideal outcome of a stable, reduced, and long-lasting pain-free hip are not always achieved. In this chapter, we discuss theoretical and practical strategies used to treat specific CP hip dislocation. In younger children, simple femoral reorientation procedures (tenotomies with or without femoral osteotomies) promote correct acetabular remodeling. Later, surgical hip reduction can be an option even in late adolescents, and the use of capsuloplasty can lead to greater hip stability, in spite of eventual pelvis obliquity caused by associated spine pathology. Several technical tips for hip surgery are presented. It is essential that patients with CP hip problems receive proper follow-up, including rehabilitation medicine, physiotherapy, anti-spastic medication, on-time orthosis availability, and real teamwork concerned with this kind of pathology.",book:{id:"7072",slug:"cerebral-palsy-clinical-and-therapeutic-aspects",title:"Cerebral Palsy",fullTitle:"Cerebral Palsy - Clinical and Therapeutic Aspects"},signatures:"João Lameiras-Campagnolo",authors:[{id:"251869",title:"Mr.",name:"João",middleName:null,surname:"Lameiras-Campagnolo",slug:"joao-lameiras-campagnolo",fullName:"João Lameiras-Campagnolo"}]},{id:"50957",title:"In Vitro Models of Spinal Cord Injury",slug:"in-vitro-models-of-spinal-cord-injury",totalDownloads:2659,totalCrossrefCites:1,totalDimensionsCites:4,abstract:"Living organisms are extremely complex functional systems. At present, there are many in vivo models of spinal cord injury (SCI) that allow the modeling of any type of central nervous system (CNS) injury, however, with some disadvantages. The production of injury models can be a highly invasive and time‐consuming process and requires high technical requirements, and costly financial issues should also be taken into account. Of course, a large number of animals have been used to obtain the relevant data of statistical significance. All of these aspects can be reduced by carrying out experiments in in vitro conditions. The primary advantage of in vitro method is that it simplifies the system under study. There are two major groups of in vitro model in use: cell culture and organotypic slice (OTS) culture. OTS is an intermediate system of the screening of in vitro cell culture and animal models and represents the in vitro system preserving the basic tissue architecture that able to closely mimic the cellular and physiological characteristics in vivo. In vitro models are the preferred methods for the study of acute or subacute pathophysiology after a trauma stimulus, enabling precise control on the extracellular environment, easy and repeatable access to the cells.",book:{id:"5203",slug:"recovery-of-motor-function-following-spinal-cord-injury",title:"Recovery of Motor Function Following Spinal Cord Injury",fullTitle:"Recovery of Motor Function Following Spinal Cord Injury"},signatures:"Lucia Slovinska, Juraj Blasko, Miriam Nagyova, Eva Szekiova and\nDasa Cizkova",authors:[{id:"83943",title:"Dr.",name:"Dasa",middleName:null,surname:"Cizkova",slug:"dasa-cizkova",fullName:"Dasa Cizkova"},{id:"90290",title:"Dr.",name:"Lucia",middleName:null,surname:"Slovinska",slug:"lucia-slovinska",fullName:"Lucia Slovinska"},{id:"185974",title:"Dr.",name:"Juraj",middleName:null,surname:"Blasko",slug:"juraj-blasko",fullName:"Juraj Blasko"},{id:"189135",title:"Dr.",name:"Miriam",middleName:null,surname:"Nagyova",slug:"miriam-nagyova",fullName:"Miriam Nagyova"},{id:"189136",title:"Dr.",name:"Eva",middleName:null,surname:"Szekiova",slug:"eva-szekiova",fullName:"Eva Szekiova"}]},{id:"63097",title:"Survival, Mortality, and Life Expectancy",slug:"survival-mortality-and-life-expectancy",totalDownloads:1352,totalCrossrefCites:0,totalDimensionsCites:0,abstract:"Cerebral palsy (CP) is a heterogenous condition, with level of disability ranging from immaterial to profound. In concert with the continuum of level of severity of disability/independent functioning, health care needs, therapies, medications, surgical interventions, costs of care, daily demands on parents and other family members, and expectations for the future in terms of education, employment, and other milestones of life all vary widely. Similarly, life expectancy in CP follows a continuum, from far lower than to potentially as high as general population life expectancy, that parallels the continuum of levels of disability. Here we review the literature documenting this, and examine the specific factors that are known to be strongly associated with mortality and longevity in CP. We also examine the evidence regarding causes of death in CP, and present some new findings related to this. Finally, we outline important methodological considerations for future research in this area.",book:{id:"7072",slug:"cerebral-palsy-clinical-and-therapeutic-aspects",title:"Cerebral Palsy",fullTitle:"Cerebral Palsy - Clinical and Therapeutic Aspects"},signatures:"Steven M. Day and Robert J. Reynolds",authors:[{id:"220737",title:"Dr.",name:"Robert",middleName:null,surname:"J. Reynolds",slug:"robert-j.-reynolds",fullName:"Robert J. Reynolds"},{id:"220748",title:"Dr.",name:"Steven",middleName:null,surname:"M. Day",slug:"steven-m.-day",fullName:"Steven M. Day"}]}],onlineFirstChaptersFilter:{topicId:"1124",limit:6,offset:0},onlineFirstChaptersCollection:[],onlineFirstChaptersTotal:0},preDownload:{success:null,errors:{}},subscriptionForm:{success:null,errors:{}},aboutIntechopen:{},privacyPolicy:{},peerReviewing:{},howOpenAccessPublishingWithIntechopenWorks:{},sponsorshipBooks:{sponsorshipBooks:[],offset:8,limit:8,total:0},allSeries:{pteSeriesList:[{id:"14",title:"Artificial Intelligence",numberOfPublishedBooks:9,numberOfPublishedChapters:89,numberOfOpenTopics:6,numberOfUpcomingTopics:0,issn:"2633-1403",doi:"10.5772/intechopen.79920",isOpenForSubmission:!0},{id:"7",title:"Biomedical Engineering",numberOfPublishedBooks:12,numberOfPublishedChapters:104,numberOfOpenTopics:3,numberOfUpcomingTopics:0,issn:"2631-5343",doi:"10.5772/intechopen.71985",isOpenForSubmission:!0}],lsSeriesList:[{id:"11",title:"Biochemistry",numberOfPublishedBooks:31,numberOfPublishedChapters:314,numberOfOpenTopics:4,numberOfUpcomingTopics:0,issn:"2632-0983",doi:"10.5772/intechopen.72877",isOpenForSubmission:!0},{id:"25",title:"Environmental Sciences",numberOfPublishedBooks:1,numberOfPublishedChapters:11,numberOfOpenTopics:4,numberOfUpcomingTopics:0,issn:"2754-6713",doi:"10.5772/intechopen.100362",isOpenForSubmission:!0},{id:"10",title:"Physiology",numberOfPublishedBooks:11,numberOfPublishedChapters:141,numberOfOpenTopics:4,numberOfUpcomingTopics:0,issn:"2631-8261",doi:"10.5772/intechopen.72796",isOpenForSubmission:!0}],hsSeriesList:[{id:"3",title:"Dentistry",numberOfPublishedBooks:8,numberOfPublishedChapters:129,numberOfOpenTopics:2,numberOfUpcomingTopics:0,issn:"2631-6218",doi:"10.5772/intechopen.71199",isOpenForSubmission:!0},{id:"6",title:"Infectious Diseases",numberOfPublishedBooks:13,numberOfPublishedChapters:113,numberOfOpenTopics:3,numberOfUpcomingTopics:1,issn:"2631-6188",doi:"10.5772/intechopen.71852",isOpenForSubmission:!0},{id:"13",title:"Veterinary Medicine and Science",numberOfPublishedBooks:11,numberOfPublishedChapters:105,numberOfOpenTopics:3,numberOfUpcomingTopics:0,issn:"2632-0517",doi:"10.5772/intechopen.73681",isOpenForSubmission:!0}],sshSeriesList:[{id:"22",title:"Business, Management and Economics",numberOfPublishedBooks:1,numberOfPublishedChapters:18,numberOfOpenTopics:2,numberOfUpcomingTopics:1,issn:"2753-894X",doi:"10.5772/intechopen.100359",isOpenForSubmission:!0},{id:"23",title:"Education and Human Development",numberOfPublishedBooks:0,numberOfPublishedChapters:5,numberOfOpenTopics:1,numberOfUpcomingTopics:1,issn:null,doi:"10.5772/intechopen.100360",isOpenForSubmission:!0},{id:"24",title:"Sustainable Development",numberOfPublishedBooks:0,numberOfPublishedChapters:14,numberOfOpenTopics:5,numberOfUpcomingTopics:0,issn:null,doi:"10.5772/intechopen.100361",isOpenForSubmission:!0}],testimonialsList:[{id:"6",text:"It is great to work with the IntechOpen to produce a worthwhile collection of research that also becomes a great educational resource and guide for future research endeavors.",author:{id:"259298",name:"Edward",surname:"Narayan",institutionString:null,profilePictureURL:"https://mts.intechopen.com/storage/users/259298/images/system/259298.jpeg",slug:"edward-narayan",institution:{id:"3",name:"University of Queensland",country:{id:null,name:"Australia"}}}},{id:"13",text:"The collaboration with and support of the technical staff of IntechOpen is fantastic. The whole process of submitting an article and editing of the submitted article goes extremely smooth and fast, the number of reads and downloads of chapters is high, and the contributions are also frequently cited.",author:{id:"55578",name:"Antonio",surname:"Jurado-Navas",institutionString:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRisIQAS/Profile_Picture_1626166543950",slug:"antonio-jurado-navas",institution:{id:"720",name:"University of Malaga",country:{id:null,name:"Spain"}}}}]},series:{item:{id:"13",title:"Veterinary Medicine and Science",doi:"10.5772/intechopen.73681",issn:"2632-0517",scope:"Paralleling similar advances in the medical field, astounding advances occurred in Veterinary Medicine and Science in recent decades. These advances have helped foster better support for animal health, more humane animal production, and a better understanding of the physiology of endangered species to improve the assisted reproductive technologies or the pathogenesis of certain diseases, where animals can be used as models for human diseases (like cancer, degenerative diseases or fertility), and even as a guarantee of public health. Bridging Human, Animal, and Environmental health, the holistic and integrative “One Health” concept intimately associates the developments within those fields, projecting its advancements into practice. This book series aims to tackle various animal-related medicine and sciences fields, providing thematic volumes consisting of high-quality significant research directed to researchers and postgraduates. It aims to give us a glimpse into the new accomplishments in the Veterinary Medicine and Science field. By addressing hot topics in veterinary sciences, we aim to gather authoritative texts within each issue of this series, providing in-depth overviews and analysis for graduates, academics, and practitioners and foreseeing a deeper understanding of the subject. Forthcoming texts, written and edited by experienced researchers from both industry and academia, will also discuss scientific challenges faced today in Veterinary Medicine and Science. In brief, we hope that books in this series will provide accessible references for those interested or working in this field and encourage learning in a range of different topics.",coverUrl:"https://cdn.intechopen.com/series/covers/13.jpg",latestPublicationDate:"June 17th, 2022",hasOnlineFirst:!0,numberOfPublishedBooks:11,editor:{id:"38652",title:"Prof.",name:"Rita",middleName:null,surname:"Payan-Carreira",slug:"rita-payan-carreira",fullName:"Rita Payan-Carreira",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRiFPQA0/Profile_Picture_1614601496313",biography:"Rita Payan Carreira earned her Veterinary Degree from the Faculty of Veterinary Medicine in Lisbon, Portugal, in 1985. She obtained her Ph.D. in Veterinary Sciences from the University of Trás-os-Montes e Alto Douro, Portugal. After almost 32 years of teaching at the University of Trás-os-Montes and Alto Douro, she recently moved to the University of Évora, Department of Veterinary Medicine, where she teaches in the field of Animal Reproduction and Clinics. Her primary research areas include the molecular markers of the endometrial cycle and the embryo–maternal interaction, including oxidative stress and the reproductive physiology and disorders of sexual development, besides the molecular determinants of male and female fertility. She often supervises students preparing their master's or doctoral theses. She is also a frequent referee for various journals.",institutionString:null,institution:{name:"University of Évora",institutionURL:null,country:{name:"Portugal"}}},editorTwo:null,editorThree:null},subseries:{paginationCount:6,paginationItems:[{id:"19",title:"Animal Science",coverUrl:"https://cdn.intechopen.com/series_topics/covers/19.jpg",editor:{id:"259298",title:"Dr.",name:"Edward",middleName:null,surname:"Narayan",slug:"edward-narayan",fullName:"Edward Narayan",profilePictureURL:"https://mts.intechopen.com/storage/users/259298/images/system/259298.jpeg",biography:"Dr. Edward Narayan graduated with Ph.D. degree in Biology from the University of the South Pacific and pioneered non-invasive reproductive and stress endocrinology tools for amphibians - the novel development and validation of non-invasive enzyme immunoassays for the evaluation of reproductive hormonal cycle and stress hormone responses to environmental stressors. \nDr. Narayan leads the Stress Lab (Comparative Physiology and Endocrinology) at the University of Queensland. A dynamic career research platform which is based on the thematic areas of comparative vertebrate physiology, stress endocrinology, reproductive endocrinology, animal health and welfare, and conservation biology. \nEdward has supervised 40 research students and published over 60 peer reviewed research.",institutionString:null,institution:{name:"University of Queensland",institutionURL:null,country:{name:"Australia"}}},editorTwo:null,editorThree:null,editorialBoard:[{id:"258334",title:"Dr.",name:"Carlos Eduardo",middleName:null,surname:"Fonseca-Alves",slug:"carlos-eduardo-fonseca-alves",fullName:"Carlos Eduardo Fonseca-Alves",profilePictureURL:"https://mts.intechopen.com/storage/users/258334/images/system/258334.jpg",institutionString:null,institution:{name:"Universidade Paulista",institutionURL:null,country:{name:"Brazil"}}},{id:"191123",title:"Dr.",name:"Juan José",middleName:null,surname:"Valdez-Alarcón",slug:"juan-jose-valdez-alarcon",fullName:"Juan José Valdez-Alarcón",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bSBfcQAG/Profile_Picture_1631354558068",institutionString:"Universidad Michoacana de San Nicolás de Hidalgo",institution:{name:"Universidad Michoacana de San Nicolás de Hidalgo",institutionURL:null,country:{name:"Mexico"}}},{id:"161556",title:"Dr.",name:"Maria Dos Anjos",middleName:null,surname:"Pires",slug:"maria-dos-anjos-pires",fullName:"Maria Dos Anjos Pires",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bS8q2QAC/Profile_Picture_1633432838418",institutionString:null,institution:{name:"University of Trás-os-Montes and Alto Douro",institutionURL:null,country:{name:"Portugal"}}},{id:"209839",title:"Dr.",name:"Marina",middleName:null,surname:"Spinu",slug:"marina-spinu",fullName:"Marina Spinu",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRLXpQAO/Profile_Picture_1630044895475",institutionString:null,institution:{name:"University of Agricultural Sciences and Veterinary Medicine of Cluj-Napoca",institutionURL:null,country:{name:"Romania"}}},{id:"92185",title:"Dr.",name:"Sara",middleName:null,surname:"Savic",slug:"sara-savic",fullName:"Sara Savic",profilePictureURL:"https://mts.intechopen.com/storage/users/92185/images/system/92185.jfif",institutionString:'Scientific Veterinary Institute "Novi Sad"',institution:{name:'Scientific Veterinary Institute "Novi Sad"',institutionURL:null,country:{name:"Serbia"}}}]},{id:"20",title:"Animal Nutrition",coverUrl:"https://cdn.intechopen.com/series_topics/covers/20.jpg",editor:{id:"175967",title:"Dr.",name:"Manuel",middleName:null,surname:"Gonzalez Ronquillo",slug:"manuel-gonzalez-ronquillo",fullName:"Manuel Gonzalez Ronquillo",profilePictureURL:"https://mts.intechopen.com/storage/users/175967/images/system/175967.png",biography:"Dr. Manuel González Ronquillo obtained his doctorate degree from the University of Zaragoza, Spain, in 2001. He is a research professor at the Faculty of Veterinary Medicine and Animal Husbandry, Autonomous University of the State of Mexico. He is also a level-2 researcher. He received a Fulbright-Garcia Robles fellowship for a postdoctoral stay at the US Dairy Forage Research Center, Madison, Wisconsin, USA in 2008–2009. He received grants from Alianza del Pacifico for a stay at the University of Magallanes, Chile, in 2014, and from Consejo Nacional de Ciencia y Tecnología (CONACyT) to work in the Food and Agriculture Organization’s Animal Production and Health Division (AGA), Rome, Italy, in 2014–2015. He has collaborated with researchers from different countries and published ninety-eight journal articles. He teaches various degree courses in zootechnics, sheep production, and agricultural sciences and natural resources.\n\nDr. Ronquillo’s research focuses on the evaluation of sustainable animal diets (StAnD), using native resources of the region, decreasing carbon footprint, and applying meta-analysis and mathematical models for a better understanding of animal production.",institutionString:null,institution:{name:"Universidad Autónoma del Estado de México",institutionURL:null,country:{name:"Mexico"}}},editorTwo:null,editorThree:null,editorialBoard:[{id:"175762",title:"Dr.",name:"Alfredo J.",middleName:null,surname:"Escribano",slug:"alfredo-j.-escribano",fullName:"Alfredo J. Escribano",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRGnzQAG/Profile_Picture_1633076636544",institutionString:"Consultant and Independent Researcher in Industry Sector, Spain",institution:null},{id:"310962",title:"Dr.",name:"Amlan",middleName:"Kumar",surname:"Patra",slug:"amlan-patra",fullName:"Amlan Patra",profilePictureURL:"https://mts.intechopen.com/storage/users/310962/images/system/310962.jpg",institutionString:null,institution:{name:"West Bengal University of Animal and Fishery Sciences",institutionURL:null,country:{name:"India"}}},{id:"216995",title:"Prof.",name:"Figen",middleName:null,surname:"Kırkpınar",slug:"figen-kirkpinar",fullName:"Figen Kırkpınar",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRMzxQAG/Profile_Picture_1625722918145",institutionString:null,institution:{name:"Ege University",institutionURL:null,country:{name:"Turkey"}}}]},{id:"28",title:"Animal Reproductive Biology and Technology",coverUrl:"https://cdn.intechopen.com/series_topics/covers/28.jpg",editor:{id:"177225",title:"Prof.",name:"Rosa Maria Lino Neto",middleName:null,surname:"Pereira",slug:"rosa-maria-lino-neto-pereira",fullName:"Rosa Maria Lino Neto Pereira",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bS9wkQAC/Profile_Picture_1624519982291",biography:"Rosa Maria Lino Neto Pereira (DVM, MsC, PhD and) is currently a researcher at the Genetic Resources and Biotechnology Unit of the National Institute of Agrarian and Veterinarian Research (INIAV, Portugal). She is the head of the Reproduction and Embryology Laboratories and was lecturer of Reproduction and Reproductive Biotechnologies at Veterinary Medicine Faculty. She has over 25 years of experience working in reproductive biology and biotechnology areas with a special emphasis on embryo and gamete cryopreservation, for research and animal genetic resources conservation, leading research projects with several peer-reviewed papers. Rosa Pereira is member of the ERFP-FAO Ex situ Working Group and of the Management Commission of the Portuguese Animal Germplasm Bank.",institutionString:"The National Institute for Agricultural and Veterinary Research. Portugal",institution:null},editorTwo:null,editorThree:null,editorialBoard:[{id:"90066",title:"Dr.",name:"Alexandre",middleName:"Rodrigues",surname:"Silva",slug:"alexandre-silva",fullName:"Alexandre Silva",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRt8pQAC/Profile_Picture_1622531020756",institutionString:null,institution:{name:"Universidade Federal Rural do Semi-Árido",institutionURL:null,country:{name:"Brazil"}}},{id:"176987",title:"Ph.D.",name:"María-José",middleName:"Carrascosa",surname:"Argente",slug:"maria-jose-argente",fullName:"María-José Argente",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bS9vOQAS/Profile_Picture_1630330499537",institutionString:null,institution:{name:"Miguel Hernandez University",institutionURL:null,country:{name:"Spain"}}},{id:"321396",title:"Prof.",name:"Muhammad Subhan",middleName:null,surname:"Qureshi",slug:"muhammad-subhan-qureshi",fullName:"Muhammad Subhan Qureshi",profilePictureURL:"https://mts.intechopen.com/storage/users/321396/images/system/321396.jpg",institutionString:null,institution:{name:"University of Agriculture",institutionURL:null,country:{name:"Pakistan"}}},{id:"183723",title:"Dr.",name:"Xiaojun",middleName:null,surname:"Liu",slug:"xiaojun-liu",fullName:"Xiaojun Liu",profilePictureURL:"https://mts.intechopen.com/storage/users/183723/images/system/183723.jpg",institutionString:null,institution:null}]}]},overviewPageOFChapters:{paginationCount:19,paginationItems:[{id:"82196",title:"Multi-Features Assisted Age Invariant Face Recognition and Retrieval Using CNN with Scale Invariant Heat Kernel Signature",doi:"10.5772/intechopen.104944",signatures:"Kamarajugadda Kishore Kumar and Movva Pavani",slug:"multi-features-assisted-age-invariant-face-recognition-and-retrieval-using-cnn-with-scale-invariant-",totalDownloads:6,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Pattern Recognition - New Insights",coverURL:"https://cdn.intechopen.com/books/images_new/11442.jpg",subseries:{id:"26",title:"Machine Learning and Data Mining"}}},{id:"82063",title:"Evaluating Similarities and Differences between Machine Learning and Traditional Statistical Modeling in Healthcare Analytics",doi:"10.5772/intechopen.105116",signatures:"Michele Bennett, Ewa J. Kleczyk, Karin Hayes and Rajesh Mehta",slug:"evaluating-similarities-and-differences-between-machine-learning-and-traditional-statistical-modelin",totalDownloads:6,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Machine Learning and Data Mining - Annual Volume 2022",coverURL:"https://cdn.intechopen.com/books/images_new/11422.jpg",subseries:{id:"26",title:"Machine Learning and Data Mining"}}},{id:"81791",title:"Self-Supervised Contrastive Representation Learning in Computer Vision",doi:"10.5772/intechopen.104785",signatures:"Yalin Bastanlar and Semih Orhan",slug:"self-supervised-contrastive-representation-learning-in-computer-vision",totalDownloads:23,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Pattern Recognition - New Insights",coverURL:"https://cdn.intechopen.com/books/images_new/11442.jpg",subseries:{id:"26",title:"Machine Learning and Data Mining"}}},{id:"79345",title:"Application of Jump Diffusion Models in Insurance Claim Estimation",doi:"10.5772/intechopen.99853",signatures:"Leonard Mushunje, Chiedza Elvina Mashiri, Edina Chandiwana and Maxwell Mashasha",slug:"application-of-jump-diffusion-models-in-insurance-claim-estimation-1",totalDownloads:8,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Data Clustering",coverURL:"https://cdn.intechopen.com/books/images_new/10820.jpg",subseries:{id:"26",title:"Machine Learning and Data Mining"}}}]},overviewPagePublishedBooks:{paginationCount:9,paginationItems:[{type:"book",id:"7723",title:"Artificial Intelligence",subtitle:"Applications in Medicine and Biology",coverURL:"https://cdn.intechopen.com/books/images_new/7723.jpg",slug:"artificial-intelligence-applications-in-medicine-and-biology",publishedDate:"July 31st 2019",editedByType:"Edited by",bookSignature:"Marco Antonio Aceves-Fernandez",hash:"a3852659e727f95c98c740ed98146011",volumeInSeries:1,fullTitle:"Artificial Intelligence - Applications in Medicine and Biology",editors:[{id:"24555",title:"Dr.",name:"Marco Antonio",middleName:null,surname:"Aceves Fernandez",slug:"marco-antonio-aceves-fernandez",fullName:"Marco Antonio Aceves Fernandez",profilePictureURL:"https://mts.intechopen.com/storage/users/24555/images/system/24555.jpg",biography:"Dr. Marco Antonio Aceves Fernandez obtained his B.Sc. (Eng.) in Telematics from the Universidad de Colima, Mexico. He obtained both his M.Sc. and Ph.D. from the University of Liverpool, England, in the field of Intelligent Systems. He is a full professor at the Universidad Autonoma de Queretaro, Mexico, and a member of the National System of Researchers (SNI) since 2009. Dr. Aceves Fernandez has published more than 80 research papers as well as a number of book chapters and congress papers. He has contributed in more than 20 funded research projects, both academic and industrial, in the area of artificial intelligence, ranging from environmental, biomedical, automotive, aviation, consumer, and robotics to other applications. He is also a honorary president at the National Association of Embedded Systems (AMESE), a senior member of the IEEE, and a board member of many institutions. His research interests include intelligent and embedded systems.",institutionString:"Universidad Autonoma de Queretaro",institution:{name:"Autonomous University of Queretaro",institutionURL:null,country:{name:"Mexico"}}}]},{type:"book",id:"7726",title:"Swarm Intelligence",subtitle:"Recent Advances, New Perspectives and Applications",coverURL:"https://cdn.intechopen.com/books/images_new/7726.jpg",slug:"swarm-intelligence-recent-advances-new-perspectives-and-applications",publishedDate:"December 4th 2019",editedByType:"Edited by",bookSignature:"Javier Del Ser, Esther Villar and Eneko Osaba",hash:"e7ea7e74ce7a7a8e5359629e07c68d31",volumeInSeries:2,fullTitle:"Swarm Intelligence - Recent Advances, New Perspectives and Applications",editors:[{id:"49813",title:"Dr.",name:"Javier",middleName:null,surname:"Del Ser",slug:"javier-del-ser",fullName:"Javier Del Ser",profilePictureURL:"https://mts.intechopen.com/storage/users/49813/images/system/49813.png",biography:"Prof. Dr. Javier Del Ser received his first PhD in Telecommunication Engineering (Cum Laude) from the University of Navarra, Spain, in 2006, and a second PhD in Computational Intelligence (Summa Cum Laude) from the University of Alcala, Spain, in 2013. He is currently a principal researcher in data analytics and optimisation at TECNALIA (Spain), a visiting fellow at the Basque Center for Applied Mathematics (BCAM) and a part-time lecturer at the University of the Basque Country (UPV/EHU). His research interests gravitate on the use of descriptive, prescriptive and predictive algorithms for data mining and optimization in a diverse range of application fields such as Energy, Transport, Telecommunications, Health and Industry, among others. In these fields he has published more than 240 articles, co-supervised 8 Ph.D. theses, edited 6 books, coauthored 7 patents and participated/led more than 40 research projects. He is a Senior Member of the IEEE, and a recipient of the Biscay Talent prize for his academic career.",institutionString:"Tecnalia Research & Innovation",institution:null}]},{type:"book",id:"7656",title:"Fuzzy Logic",subtitle:null,coverURL:"https://cdn.intechopen.com/books/images_new/7656.jpg",slug:"fuzzy-logic",publishedDate:"February 5th 2020",editedByType:"Edited by",bookSignature:"Constantin Volosencu",hash:"54f092d4ffe0abf5e4172a80025019bc",volumeInSeries:3,fullTitle:"Fuzzy Logic",editors:[{id:"1063",title:"Prof.",name:"Constantin",middleName:null,surname:"Volosencu",slug:"constantin-volosencu",fullName:"Constantin Volosencu",profilePictureURL:"https://mts.intechopen.com/storage/users/1063/images/system/1063.png",biography:"Prof. Dr. Constantin Voloşencu graduated as an engineer from\nPolitehnica University of Timișoara, Romania, where he also\nobtained a doctorate degree. He is currently a full professor in\nthe Department of Automation and Applied Informatics at the\nsame university. Dr. Voloşencu is the author of ten books, seven\nbook chapters, and more than 160 papers published in journals\nand conference proceedings. He has also edited twelve books and\nhas twenty-seven patents to his name. He is a manager of research grants, editor in\nchief and member of international journal editorial boards, a former plenary speaker, a member of scientific committees, and chair at international conferences. His\nresearch is in the fields of control systems, control of electric drives, fuzzy control\nsystems, neural network applications, fault detection and diagnosis, sensor network\napplications, monitoring of distributed parameter systems, and power ultrasound\napplications. 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