Chapters authored
Piezoelectric-Layered Structures Based on Synthetic Diamond
Results of theoretical, modeling, and experimental investigation of microwave acoustic properties of piezoelectric layered structure “Me1/AlN/Me2/(100) diamond” have been presented within a wide frequency band 0.5–10 GHz. The highest among known material quality parameter Q × f ~ 1014 Hz for the IIa type synthetic diamond at operational frequency ~10 GHz has been found. Conditions of UHF excitation and propagation of the bulk, surface, and Lamb plate acoustic waves have been established and studied experimentally. Frequency dependencies of the impedance and quality factor have been studied to obtain a number of piezoelectric layered structure parameters as electromechanical coupling coefficient, equivalent circuit parameters, etc. Results of 2D finite element modeling of a given piezoelectric layered structure have been compared with the experimental ones obtained for the real high-overtone bulk acoustic resonator. An origin of high-overtone bulk acoustic resonator’s spurious resonant peaks has been studied. Results on UHF acoustic attenuation of IIa-type synthetic single crystalline diamond have been presented and discussed in terms of Akhiezer and Landau–Rumer mechanisms of phonon–phonon interaction. Identification and classification of Lamb waves belonging to several branches as well as dispersive curves of phase velocities have been executed. Necessity of introducing a more correct Lamb-mode classification has been recognized.
Part of the book: Piezoelectric Materials
Application of Thin Piezoelectric Films in Diamond-Based Acoustoelectronic Devices
The theory of external loading influence on acoustic parameters of piezoelectric five-layered structure as “Al/(001) AlN/Mo/(001) diamond/Me” has been developed. Oscillations in diamond-based high-overtone bulk acoustic resonators (HBARs) have been investigated in terms of 3D FEM simulation. Peculiarities of technology of aluminum-scandium nitride (ASN) films have been discussed. Composition Al0.8Sc0.2N was obtained to create the diamond-based HBAR and SAW resonator. Application of ASN films has resulted in a drastic increasing an electromechanical coupling up to 2.5 times in comparison with aluminum nitride. Development of ASN technology in a way of producing a number of compositions with the better piezoelectric properties has a clear prospective. SAW resonator based on “Al IDT/(001) AlN/(001) diamond” structure has been investigated in the band 400–1500 MHz. The highest-quality factor Q ≈ 1050 was observed for the Sezawa mode at 1412 MHz. Method of measuring HBAR’s parameters within 4–400 K at 0.5–5 GHz has been developed. Results on temperature dependence of diamond’s Q-factor at relatively low frequencies were quite different in comparison with the ones at the frequencies up to 5 GHz. Difference could be explained in terms of changing mechanism of acoustic attenuation from Akhiezer’s type to the Landau-Rumer’s one at higher frequencies in diamond.
Part of the book: Piezoelectricity