",isbn:"978-1-80356-303-9",printIsbn:"978-1-80356-302-2",pdfIsbn:"978-1-80356-304-6",doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!0,isSalesforceBook:!1,isNomenclature:!1,hash:"dd28db91ac081287c5204f82e219d67e",bookSignature:"Prof. Xiaoyan Dong and Prof. Nanbert Zhong",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/11722.jpg",keywords:"Asthma, Th1/Th2 Balance, Airway Inflammation, miRNA, lncRNA, Cytokines, Signaling Pathways, Steroid Resistance, Severe Asthma, Therapeutic Targets, Biomarker, Bacterial",numberOfDownloads:null,numberOfWosCitations:0,numberOfCrossrefCitations:null,numberOfDimensionsCitations:null,numberOfTotalCitations:null,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"February 15th 2022",dateEndSecondStepPublish:"April 19th 2022",dateEndThirdStepPublish:"June 18th 2022",dateEndFourthStepPublish:"September 6th 2022",dateEndFifthStepPublish:"November 5th 2022",dateConfirmationOfParticipation:null,remainingDaysToSecondStep:"a month",secondStepPassed:!0,areRegistrationsClosed:!1,currentStepOfPublishingProcess:3,editedByType:null,kuFlag:!1,biosketch:"Dr. Dong is a medical doctor director of respiratory in the Shanghai children's hospital. 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Pathology, Fertility and Sterility, BMC Public Health, Clinical and Experimental Dermatology, PLoS One, Reproductive BioMedicine (Online) and Reproductive Biology. My research studies have been founded by the NIH (USA), March of Dimes Foundation (USA), Batten Disease Support and Research Association (USA), New York State Research Foundation for Mental Hygiene (USA), Chinese Ministry of Science and Technology (Oversea Chinese Outstanding Young Investigator Award, and 973 High Tech project), Chinese Ministry of Education (211, 985 Projects), Chinese Natural Science Foundation, and Shanghai Municipal Government. My current research is focusing on the genetic and genomic study of prematurity including preterm birth and stillbirth, as well as the outcome of pregnancy, with an integrated “-omics” approach. I am also exploring rational strategies for the prevention and intervention of preterm birth with a longitudinal approach. 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\n\t\t\t
1. Introduction
\n\t\t\t
In networked haptic environments, users can touch objects in a virtual space and feel the weight of the objects by manipulating haptic interface devices (Srinivasan & Basdogn, 1997). Thus, we can largely improve the efficiency of collaborative work such as remote surgery simulation and immerse ourselves in playing networked games.
\n\t\t\t
On the other hand, a variety of haptic interface devices have been developed so far. The haptic interface devices have different specifications (e.g., the workspace size, position resolution, and exertable force) from each other. When we interconnect the devices over a network, the differences may cause some problems. There are a few papers addressing the problems (Hirose et al., 1998; Kameyama & Ishibashi, 2007; Fujimoto et al., 2008; Huang et al., 2008). In (Hirose et al., 1998), Hirose et al. develop basic software called Haptic Interface Platform (HIP), which does not depend on types of haptic interface devices. Then, they show that users do not notice meaningful differences in hardness in an experiment where the users recognize the hardness of an object although the users manipulate different types of haptic interface devices. In (Kameyama & Ishibashi, 2007), the authors clarify the influences of difference in workspace size between PHANToM Omni (Salisbury & Srinivasan, 1997\n\t\t\t\t) (just called Omni here) and PHANToM Desktop (Salisbury & Srinivasan, 1997\n\t\t\t\t) (called Desktop) for networked collaborative work and competitive work. They show that if the range of motion of a haptic interface device is not limited to a workspace which is smaller than the virtual space, there is no large influence of the difference on the efficiency of the collaborative work and the fairness of the competitive work. Otherwise, the efficiency of the collaborative work seriously deteriorates, and the fairness is damaged in the competitive work. In (Fujimoto et al., 2008), the authors handle collaborative work using Omni and SPIDAR-G AHS (Kim et al., 2003) (called SPIDAR). And they compare some methods of mapping workspaces to a virtual space. In (Huang et al., 2008), the authors treat collaborative work using Omni, Desktop, SPIDAR, and Falcon (Novint, 2007) when the size of a virtual space is small so that it is not necessary to map workspaces to the virtual space. However, the experiment with various haptic interface devices in the case where we need mapping (that is, the size of a virtual space is different from the size of each workspace) has not been performed.
\n\t\t\t
In this chapter, we deal with collaborative work and competitive work using Omni, Desktop, SPIDAR, and Falcon. And we examine the influences of methods of mapping workspaces to a virtual space on the efficiency of the two types of work.
\n\t\t\t
The rest of this chapter is organized as follows. Section 2 outlines the specifications of the haptic interface devices. Section 3 gives a brief description of the collaborative work and the competitive work. Section 4 explains system models of the two types of work. Section 5 describes methods of mapping. Section 6 explains the method of our experiment, and experimental results are presented in Section 7. Section 8 concludes the chapter.
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\n\t\t
\n\t\t\t
2. Specifications of Haptic Interface Devices
\n\t\t\t
When a user uses Omni or Desktop (see Figure 1(a) and (b)), the user manipulates the stylus of the device as if he/she had a pen. When he/she employs SPIDAR (see Figure 1(c)), he/she manipulates a globe (called the grip) hung with eight wires. In the case of Falcon (see Figure 1(d)), he/she manipulates a spherical grip connected with three arms. The workspace sizes of the devices are different from each other (see Table 1). In addition, the position resolution and exertable force of each device are different from those of the other devices.
\n\t\t\t
Figure 1.
Haptic interface devices.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
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Device
\n\t\t\t\t\t\t
Width [mm]
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Height [mm]
\n\t\t\t\t\t\t
Depth [mm]
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
160
\n\t\t\t\t\t\t
120
\n\t\t\t\t\t\t
70
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
160
\n\t\t\t\t\t\t
120
\n\t\t\t\t\t\t
120
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
200
\n\t\t\t\t\t\t
120
\n\t\t\t\t\t\t
200
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
75
\n\t\t\t\t\t\t
75
\n\t\t\t\t\t\t
75
\n\t\t\t\t\t
\n\t\t\t\t
Table 1.
Workspace sizes of haptic interface devices.
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3. Work Descriptions
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We handle two types of work in which the difference in specifications excluding the workspace size among the four devices does not largely affect the efficiency of work.
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3.1. Collaborative Work
\n\t\t\t\t
Each of two users operates a haptic interface device, and the two users move a rigid cube (the length of each side is 30 mm, and the mass is 800 g) as an object collaboratively by holding the cube between the two cursors of the devices in a 3-D virtual space (width: 150 mm, height: 150 mm, depth: 140 mm. We will discuss the size of the virtual space in Section 5) surrounded by walls, a floor, and a ceiling (see Figure 2) (Fujimoto et al., 2008; Huang et al., 2008). The cursor of each haptic interface device moves in the virtual space when a user manipulates the stylus or grip of the device with his/her hand. The two users lift and move the cube collaboratively so that the cube contains a target (a sphere in Figure 2) which revolves along a circular orbit at a constant velocity. We do not carry out collision detection among the target, the orbit, and the cube or cursors.
\n\t\t\t\t
Figure 2.
Displayed image of virtual space in collaborative work.
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\n\t\t\t
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3.2. Competitive Work
\n\t\t\t\t
Each of four players moves his/her object by lifting the object (the length of each side is 20 mm, and the mass is 750 g) from the bottom so that the object contains the target in a 3-D virtual space (width: 150 mm, height: 150 mm, depth: 140 mm. We will discuss the size of the virtual space in Section 5) as shown in Figure 3. If the distance between the center of the object and that of the target is less than 5 mm, we judge that the object contains the target. When the target is contained by any of the four objects, it disappears and then appears at a randomly-selected position in the space. The four players compete on the number of eliminated targets with each other. The objects and target do not collide with each other, and the cursors do not collide with the target.
\n\t\t\t\t
Figure 3.
Displayed image of virtual space in competitive work
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\n\t\t
\n\t\t\t
4. System Models
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4.1. Collaborative Work
\n\t\t\t\t
A system model of the collaborative work is shown in Figure 4. The system model is based on a client-server model which consists of a single server and two clients (clients 1 and 2). As a haptic interface device, we employ Omni, Desktop, SPIDAR, or Falcon.
\n\t\t\t\t
When the haptic interface device at a client is Omni, Desktop, or Falcon, the client performs haptic simulation by repeating the servo loop at a rate of 1 kHz (Novint, 2007; SensAble, 2004). And it inputs/outputs a stream of media units (MUs), each of which is the information unit for intra-stream synchronization, at the rate; that is, an MU is input/output every millisecond. Each MU contains the identification (ID) number of the client, the positional information of the cursor of the partner device, and the sequence number of the servo loop, which we use instead of the timestamp of the MU (Ishibashi et al., 2002). In the case where SPIDAR is used at a client, the client carries out haptic simulation at 1 kHz by using a timer and inputs/outputs a stream of MUs in the same way as that in the case where the other haptic interface devices are employed.
\n\t\t\t\t
The server receives MUs from the two clients, and it calculates the position of the object based on the spring-damper model (SensAble, 2004). Then, it transmits the positional information of the object and cursor as an MU to the two clients.
\n\t\t\t\t
When each client receives an MU, the client updates the position of the object after carrying out intra-stream synchronization control and calculates the reaction force applied to a user of the client. We employ Skipping (Ishibashi et al., 2002) for the intra-stream synchronization control at the clients. Skipping outputs MUs on receiving the MUs. When multiple MUs are received at the same time, however, only the latest MU is output and the others are discarded.
\n\t\t\t\t
Figure 4.
System model of collaborative work.
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4.2. Competitive Work
\n\t\t\t\t
\n\t\t\t\t\tFigure 5 shows a system model of the competitive work. The system model is similar to that of the collaborative work; that is, functions at the server and each client are almost the same as those of the collaborative work. The system model includes four clients (clients 1 through 4).
\n\t\t\t\t
Figure 5.
System model of competitive work.
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\n\t\t
\n\t\t
\n\t\t\t
5. Methods of Mapping
\n\t\t\t
When the size of the virtual space is different from that of each workspace, there may exist domains that some of the haptic interface devices cannot reach in the virtual space. Therefore, it is necessary to map the workspace to the virtual space so that each device is able to work throughout the virtual space.
\n\t\t\t
In this chapter, we deal with four cases in terms of the virtual space size. For explanation of the four cases, we define the reference size (width: 75.0 mm, height: 75.0 mm, depth: 70.0 mm) as the intersection of the four workspace sizes. In the first case, we set the virtual space size to half the reference size (width: 37.5 mm, height: 37.5 mm, depth: 35.0 mm). In the second case, the virtual space size is set to the reference size. In the third case, the virtual space size is set to one and a half times the reference size (width: 112.5 mm, height: 112.5 mm, depth: 105 mm). In the fourth case, the virtual space size is set to twice the reference size (width: 150 mm, height: 150 mm, depth: 140 mm). However, in the collaborative work, the first case is not treated since it was difficult to do the work due to the relation between the size of the object (see Section 3. The size of the object is constant independently of the size of the virtual space) and that of the virtual space.
\n\t\t\t
This chapter handles the following two methods of mapping a workspace to the virtual space.
\n\t\t\t
\n\t\t\t\tMethod a: The workspace is uniformly mapped to the virtual space in the directions of the x-, y-, and z-axes (see Figure 6, which shows the shape of the workspace before and after mapping with Method a). In the case where the haptic interface device is Omni and the virtual space size is set to the reference size, for example, since the mapping ratio of the z-axis direction is one and the ratio is larger than those of the other axial directions, we also set the ratios of the other axial directions to one (see Table 2, which show the mapping ratios in the two methods in the collaborative work in the case where the virtual space size is set to the reference size. We also show the mapping ratios in the collaborative work and competitive work in Table 3 through 8).
\n\t\t\t
\n\t\t\t\tMethod b: The workspace is individually mapped to the virtual space in the direction of each axis so that the mapped workspace size corresponds to the virtual space size (see Figure 7, which shows the shape of the workspace before and after mapping with Method b).
\n\t\t\t
In addition, we handled other two methods. In one method, the mapping ratio of each employed device is set to the largest mapping ratio among the employed devices in Method a. In the other method, mapping ratio of each employed device is set to the largest mapping ratio among the employed devices in Method b. However, experimental results of the two methods were worse than those of Method a.
\n\t\t\t
Figure 6.
Illustration of mapping with Method a.
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Method
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Combination
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Device
\n\t\t\t\t\t\t
Ratio of x -axis
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Ratio of y -axis
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Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni-Omni
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop-Desktop
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Falcon
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1 .00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni-Desktop
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1 .00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Omni
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1 .00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1 .00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-SPIDAR
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1 .00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni-Omni
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop-Desktop
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.58
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Falcon
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1 .00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
0.93
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni-Desktop
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.58
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Omni
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
0.93
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-SPIDAR
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
0.93
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0. 38
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.35
\n\t\t\t\t\t
\n\t\t\t\t
Table 2.
Mapping ratios in two methods of mapping in collaborative work in case where virtual space size is set to reference size.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Method
\n\t\t\t\t\t\t
Combination
\n\t\t\t\t\t\t
Device
\n\t\t\t\t\t\t
Ratio of x -axis
\n\t\t\t\t\t\t
Ratio of y -axis
\n\t\t\t\t\t\t
Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni-Omni
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop-Desktop
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Falcon
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni-Desktop
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Omni
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-SPIDAR
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni-Omni
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop-Desktop
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.88
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Falcon
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.40
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni-Desktop
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.88
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Omni
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.40
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-SPIDAR
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.40
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0. 56
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.53
\n\t\t\t\t\t
\n\t\t\t\t
Table 3.
Mapping ratios in two methods of mapping in collaborative work in case where virtual space size is set to one and a half times reference size.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Method
\n\t\t\t\t\t\t
Combination
\n\t\t\t\t\t\t
Device
\n\t\t\t\t\t\t
Ratio of x -axis
\n\t\t\t\t\t\t
Ratio of y -axis
\n\t\t\t\t\t\t
Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni-Omni
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop-Desktop
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Falcon
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni-Desktop
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Omni
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-SPIDAR
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni-Omni
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop-Desktop
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.17
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Falcon
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
1.87
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni-Desktop
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.17
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-Omni
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
1.87
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon-SPIDAR
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
2 .00
\n\t\t\t\t\t\t
1.87
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.75
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
0.7 0
\n\t\t\t\t\t
\n\t\t\t\t
Table 4.
Mapping ratios in two methods of mapping in collaborative work.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
M ethod
\n\t\t\t\t\t\t
D evice
\n\t\t\t\t\t\t
Ratio of x -axis
\n\t\t\t\t\t\t
Ratio of y -axis
\n\t\t\t\t\t\t
Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0.23
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.23
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.29
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.19
\n\t\t\t\t\t\t
0.31
\n\t\t\t\t\t\t
0.18
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t\t
0.50
\n\t\t\t\t\t\t
0.47
\n\t\t\t\t\t
\n\t\t\t\t
Table 5.
Mapping ratios in two methods of mapping in competitive work in case where virtual space size is set to half reference size.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
M ethod
\n\t\t\t\t\t\t
D evice
\n\t\t\t\t\t\t
Ratio of x -axis
\n\t\t\t\t\t\t
Ratio of y -axis
\n\t\t\t\t\t\t
Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0. 47
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.58
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0. 38
\n\t\t\t\t\t\t
0.63
\n\t\t\t\t\t\t
0.35
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
1.00
\n\t\t\t\t\t\t
0.93
\n\t\t\t\t\t
\n\t\t\t\t
Table 6.
Mapping ratios in two methods of mapping in competitive work in case where virtual space size is set to reference size.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
M ethod
\n\t\t\t\t\t\t
D evice
\n\t\t\t\t\t\t
Ratio of x -axis
\n\t\t\t\t\t\t
Ratio of y -axis
\n\t\t\t\t\t\t
Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0. 70
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.88
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0. 56
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
0.53
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.50
\n\t\t\t\t\t\t
1.40
\n\t\t\t\t\t
\n\t\t\t\t
Table 7.
Mapping ratios in two methods of mapping in competitive work in case where virtual space size is set to one and a half times reference size.
\n\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
M ethod
\n\t\t\t\t\t\t
D evice
\n\t\t\t\t\t\t
Ratio of x -axis
\n\t\t\t\t\t\t
Ratio of y -axis
\n\t\t\t\t\t\t
Ratio of z -axis
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
a
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
b
\n\t\t\t\t\t\t
Omni
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Desktop
\n\t\t\t\t\t\t
0.94
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
1.17
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
SPIDAR
\n\t\t\t\t\t\t
0.75
\n\t\t\t\t\t\t
1.25
\n\t\t\t\t\t\t
0.70
\n\t\t\t\t\t
\n\t\t\t\t\t
\n\t\t\t\t\t\t
Falcon
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
2.00
\n\t\t\t\t\t\t
1.87
\n\t\t\t\t\t
\n\t\t\t\t
Table 8.
Mapping ratios in two methods of mapping in competitive work in case where virtual space size is set to twice reference size.
\n\t\t\t
Figure 7.
Illustration of mapping with Method b.
\n\t\t
\n\t\t
\n\t\t\t
6. Method of Experiment
\n\t\t\t
\n\t\t\t\t
6.1. Experimental Systems
\n\t\t\t\t
As shown in Figure 8, our experimental system in the collaborative work consists of a single server and two clients (clients 1 and 2). The server is connected to the two clients via an Ethernet switching hub (100 Mbps). In this chapter, we deal with the following six combinations as pairs of the devices: Omni-Omni, Desktop-Desktop, Falcon-Falcon, Omni-Desktop, Falcon-Omni, and Falcon-SPIDAR. These combinations are chosen from among pairs which have large differences in the efficiency of the work in (Huang et al., 2008).
\n\t\t\t\t
Figure 8.
Configuration of experimental system in collaborative work.
\n\t\t\t\t
\n\t\t\t\t\tFigure 9 shows our experimental system in the competitive work. The system consists of a single server and four clients (clients 1, 2, 3 and 4). The server is connected to the four clients via an Ethernet switching hub (100 Mbps). Clients 1 through 4 have Omni, Desktop, SPIDAR and Falcon, respectively.
\n\t\t\t\t
Figure 9.
Configuration of experimental system in competitive work.
\n\t\t\t
\n\t\t\t
\n\t\t\t\t
6.2. Performance Measure
\n\t\t\t\t
As a performance measure, we employ the average distance between cube and target (Ishibashi et al., 2002) in the experiment on the collaborative work and the average total number of eliminated targets (Ishibashi & Kaneoka, 2006) in the experiment on the competitive work, which are QoS (Quality of Service) parameters. The average distance between cube and target is defined as the mean distance between the centers of them. This measure is related to the accuracy of the collaborative work. Small values of the average distance indicate that the cube follows the target precisely; this signifies that the efficiency of the work is high. The average total number of eliminated targets is closely related to the efficiency of the competitive work. Large values lead to high efficiency of the work.
\n\t\t\t\t
In the collaborative work, two users operated haptic interface devices at clients 1 and 2. The experiment for each method was carried out 40 times. When the users operated different devices from each other, they exchanged the devices, and the experiment was done again. In the competitive work, four users operated devices at clients 1, 2, 3 and 4. The experiment for each method was also carried out 40 times. The users exchanged the devices every 10 times so that each user employed every device. The measurement time of each experimental run was 30 seconds in the two types of work.
\n\t\t\t
\n\t\t
\n\t\t
\n\t\t\t
7. Experimental Results
\n\t\t\t
\n\t\t\t\t
7.1. Collaborative Work
\n\t\t\t\t
We show the average distance between cube and target for the two methods in Figure 10 through 12, where the virtual space size is set to the reference size, one and a half times the reference size, and twice the reference size, respectively. In the figures, we also display the 95 % confidence intervals.
\n\t\t\t\t
In Figure 10 through 12, we see that as the size of the virtual space becomes larger, the average distance increases. From this, we can say that the larger the size of the virtual space, the more difficult the work.
\n\t\t\t\t
From Figure 10 through 12, we also find that the average distance of Method a is smaller than that of Method b in all the combinations. The reason is as follows. In Method b, the movement distances of the cursor in the directions of the three axes are different from each other in the virtual space even if the movement distances of the stylus or grip in the directions of the three axes are the same in the workspace. Thus, the work with Method b is more difficult than that with Method a. In the case of Falcon-Falcon, the average distance of Method a is approximately equal to that of Method b. This is because the shape of the workspace of Falcon resembles that of the virtual space (the width, height, and depth of the workspace of Falcon are 75 mm, and those of the virtual space are 75 mm, 75 mm, and 70 mm, respectively, in the case where the virtual space size is set to the reference size).
\n\t\t\t\t
From the above observations, we can conclude that Method a is more effective than Method b in the collaborative work.
\n\t\t\t
\n\t\t\t
\n\t\t\t\t
7.2. Competitive Work
\n\t\t\t\t
We show the average total number of eliminated targets for the two methods in Figure 13 through 16, where the virtual space size is set to half the reference size, the reference size, one and a half times the reference size, and twice the reference size, respectively. In the figures, we also display the 95 % confidence intervals.
\n\t\t\t\t
In Figure 13 through 16, we see that as the size of the virtual space becomes larger, the average total number of eliminated targets decreases. From this, we can say that the larger the size of the virtual space, the more difficult the work.
\n\t\t\t\t
Figure 10.
Average distance between cube and target in case where virtual space size is set to reference size.
\n\t\t\t\t
Figure 11.
Average distance between cube and target in case where virtual space size is set to one and a half times reference size.
\n\t\t\t\t
Figure 12.
Average distance between cube and target in case where virtual space size is set to twice reference size.
\n\t\t\t\t
From Figure 13, 14, and 16, we find that the average total number of eliminated targets of Method a is larger than that of Method b. The reason is similar to that in the case of the collaborative work. In Figure 15, the average total number of eliminated targets of Method b is somewhat larger than that of Method a. To clarify the reason, we examined the average number of eliminated targets at each haptic interface devices. As a result, the average number of eliminated targets of Omni with Method b was larger than that with Method a. This is because in the case of Omni, the mapping ratio of the x-axis with Method a is much larger than that with Method b owing to the shape of the workspace of Omni; therefore, it is easy to drop the cube in Method a.
\n\t\t\t\t
From the above observations, we can roughly conclude that Method a is more effective than Method b in the competitive work.
\n\t\t\t
\n\t\t
\n\t\t
\n\t\t\t
8. Conclusion
\n\t\t\t
This chapter dealt with collaborative work and competitive work using four kinds of haptic interface devices (Omni, Desktop, SPIDAR, and Falcon) when the size of a virtual space is different from the size of each workspace. We examined the influences of methods of mapping workspaces to the virtual space on the efficiency of work. As a result, we found that the efficiency of work is higher in the case where the workspace is uniformly mapped to the virtual space in the directions of the x-, y-, and z-axes than in the case where the workspace is individually mapped to the virtual space in the direction of each axis so that the mapped workspace size corresponds to the virtual space size.
\n\t\t\t
Figure 13.
Average total number of eliminated targets in case where virtual space size is set to half reference size.
\n\t\t\t
Figure 14.
Average total number of eliminated targets in case where virtual space size is set to reference size.
\n\t\t\t
Figure 15.
Average total number of eliminated targets in case where virtual space size is set to one and a half times reference size.
\n\t\t\t
Figure 16.
Average total number of eliminated targets in case where virtual space size is set to twice reference size.
\n\t\t\t
As the next step of our research, we will handle other types of work and investigate the influences of network latency and packet loss.
\n\t\t
\n\t
Acknowledgments
\n\t\t\t
The authors thank Prof. Shinji Sugawara and Prof. Norishige Fukushima of Nagoya Institute of Technology for their valuable comments.
\n\t\t
\n',keywords:null,chapterPDFUrl:"https://cdn.intechopen.com/pdfs/9903.pdf",chapterXML:"https://mts.intechopen.com/source/xml/9903.xml",downloadPdfUrl:"/chapter/pdf-download/9903",previewPdfUrl:"/chapter/pdf-preview/9903",totalDownloads:3113,totalViews:190,totalCrossrefCites:2,totalDimensionsCites:2,totalAltmetricsMentions:0,impactScore:1,impactScorePercentile:56,impactScoreQuartile:3,hasAltmetrics:0,dateSubmitted:null,dateReviewed:null,datePrePublished:null,datePublished:"April 1st 2010",dateFinished:null,readingETA:"0",abstract:null,reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/9903",risUrl:"/chapter/ris/9903",book:{id:"3652",slug:"advances-in-haptics"},signatures:"Ayano Tatematsu and Yutaka Ishibashi",authors:null,sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Specifications of Haptic Interface Devices",level:"1"},{id:"sec_3",title:"3. Work Descriptions",level:"1"},{id:"sec_3_2",title:"3.1. Collaborative Work",level:"2"},{id:"sec_4_2",title:"3.2. Competitive Work",level:"2"},{id:"sec_6",title:"4. System Models",level:"1"},{id:"sec_6_2",title:"4.1. Collaborative Work",level:"2"},{id:"sec_7_2",title:"4.2. Competitive Work ",level:"2"},{id:"sec_9",title:"5. Methods of Mapping",level:"1"},{id:"sec_10",title:"6. Method of Experiment",level:"1"},{id:"sec_10_2",title:"6.1. Experimental Systems",level:"2"},{id:"sec_11_2",title:"6.2. Performance Measure",level:"2"},{id:"sec_13",title:"7. Experimental Results",level:"1"},{id:"sec_13_2",title:"7.1. Collaborative Work",level:"2"},{id:"sec_14_2",title:"7.2. Competitive Work",level:"2"},{id:"sec_16",title:"8. Conclusion",level:"1"},{id:"sec_17",title:"Acknowledgments",level:"1"}],chapterReferences:[{id:"B1",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tFujimoto\n\t\t\t\t\t\t\tT.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tHuang\n\t\t\t\t\t\t\tP.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tIshibashi\n\t\t\t\t\t\t\tY.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tSugawara\n\t\t\t\t\t\t\tS.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t2008 Interconnection between different types of haptic interface devices: Absorption of difference in workspace size, Proceedings of the 18th International Conference on Artificial Reality and Telexistence (ICAT’08), 319\n\t\t\t\t\t322\n\t\t\t\t\n\t\t\t'},{id:"B2",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tHirose\n\t\t\t\t\t\t\tM.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tIwata\n\t\t\t\t\t\t\tH.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tIkei\n\t\t\t\t\t\t\tY.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tOgi\n\t\t\t\t\t\t\tT.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tHirota\n\t\t\t\t\t\t\tK.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tYano\n\t\t\t\t\t\t\tH.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tKakehi\n\t\t\t\t\t\t\tN.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t1998 Development of haptic interface platform (HIP) (in Japanese). 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Commun., Special Section on Multimedia QoS Evaluation and Management Technologies, E89-B , 2\n\t\t\t\t\t313\n\t\t\t\t\t319\n\t\t\t\t\n\t\t\t'},{id:"B5",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tIshibashi\n\t\t\t\t\t\t\tY.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tTasaka\n\t\t\t\t\t\t\tS.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tHasegawa\n\t\t\t\t\t\t\tT.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t2002 The virtual-time rendering algorithm for haptic media synchronization in networked virtual environments, Proceedings of the 16th International Workshop on Communication Quality & Reliability (CQR’02), 213\n\t\t\t\t\t217\n\t\t\t\t\n\t\t\t'},{id:"B6",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tKameyama\n\t\t\t\t\t\t\tS.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tIshibashi\n\t\t\t\t\t\t\tY.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t2007\n\t\t\t\t\tInfluences of difference in workspace size between haptic interface devices on networked collaborative and competitive work, Proceedings of SPIE Optics East, Multimedia Systems and Applications X, 6777\n\t\t\t\t\t30\n\t\t\t\t\n\t\t\t'},{id:"B7",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tKim\n\t\t\t\t\t\t\tS.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tBerkley\n\t\t\t\t\t\t\tJ. J.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tSato\n\t\t\t\t\t\t\tM.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t2003\n\t\t\t\t\tA novel seven degree of freedom haptic device for engineering design. Virtual Reality, 6\n\t\t\t\t\t4\n\t\t\t\t\t217\n\t\t\t\t\t228\n\t\t\t\t\n\t\t\t'},{id:"B8",body:'\n\t\t\t\t\n\t\t\t\t\tNovintTechnologies, Inc.\n\t\t\t\t\t2007 Haptic Device Abstraction Layer programmer’s guide, Version 1.1.9 Beta\n\t\t\t'},{id:"B9",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tSalisbury\n\t\t\t\t\t\t\tJ. K.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tSrinivasan\n\t\t\t\t\t\t\tM. A.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t1997 Phantom-based haptic interaction with virtual object. IEEE Computer Graphics and Applications, 17\n\t\t\t\t\t5\n\t\t\t\t\t6\n\t\t\t\t\t10\n\t\t\t\t\n\t\t\t'},{id:"B10",body:'\n\t\t\t\t\n\t\t\t\t\tSensAble Technologies, Inc.\n\t\t\t\t\t2004 3D Touch SDK OpenHaptics Toolkit programmer’s guide, Version 1.0\n\t\t\t'},{id:"B11",body:'\n\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tSrinivasan\n\t\t\t\t\t\t\tM. A.\n\t\t\t\t\t\t\n\t\t\t\t\t\t\n\t\t\t\t\t\t\tBasdogn\n\t\t\t\t\t\t\tC.\n\t\t\t\t\t\t\n\t\t\t\t\t\n\t\t\t\t\t1997\n\t\t\t\t\tHaptics in virtual environments: Taxonomy, research status, and challenges.\n\t\t\t\t\tComputers and Graphics, 21\n\t\t\t\t\t4\n\t\t\t\t\t393\n\t\t\t\t\t404\n\t\t\t\t\n\t\t\t'}],footnotes:[],contributors:[{corresp:"yes",contributorFullName:"Ayano Tatematsu",address:"",affiliation:'
'}],corrections:null},book:{id:"3652",type:"book",title:"Advances in Haptics",subtitle:null,fullTitle:"Advances in Haptics",slug:"advances-in-haptics",publishedDate:"April 1st 2010",bookSignature:"Mehrdad Hosseini Zadeh",coverURL:"https://cdn.intechopen.com/books/images_new/3652.jpg",licenceType:"CC BY-NC-SA 3.0",editedByType:"Edited by",isbn:null,printIsbn:"978-953-307-093-3",pdfIsbn:"978-953-51-4549-3",reviewType:"peer-reviewed",numberOfWosCitations:262,isAvailableForWebshopOrdering:!0,editors:[{id:"6239",title:"Dr.",name:"Mehrdad Hosseini",middleName:null,surname:"Zadeh",slug:"mehrdad-hosseini-zadeh",fullName:"Mehrdad Hosseini Zadeh"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"692"}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},chapters:[{id:"9919",type:"chapter",title:"Novel Actuation Methods for High Force Haptics",slug:"novel-actuation-methods-for-high-force-haptics",totalDownloads:3514,totalCrossrefCites:0,signatures:"Stephen P. 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1. Introduction
Photodetectors (PDs) are the optoelectronic devices which convert incident optical signals into electrical outputs through the phenomenon of light-matter interaction, which can be processed by the conventional read-out electronics. PDs form the basis of many vital components present in numerous electronic and optoelectronic devices as they find applications in a broad range of fields such as in photovoltaics [1, 2], military and defense technology [3], optical communication [4], remote sensing [3], biomedical imaging [5], environmental and ozone layer monitoring [4], and so on. Therefore, highly efficient photodetection has become very crucial for the industrial and scientific communities. With advancements in the matured technology of three-dimensional (3D) semiconductors [6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17] such as gallium nitride (GaN), zinc oxide (ZnO), indium gallium nitride (InGaN), indium nitride (InN), gallium oxide (Ga2O3), gallium arsenide (GaAs), silicon (Si), aluminum gallium nitride (AlGaN), germanium (Ge), mercury cadmium telluride (HgCdTe), gallium antimonide (GaSb), and so forth, high-performance PDs sensitive to wavelengths in the entire ultraviolet (UV)-far infrared (FIR) have been successfully fabricated. However, further advances in these PDs are hindered by the certain drawbacks encountered due to the intrinsic limitations in 3D semiconductors such as lower charge carrier mobilities, low light absorption properties, presence of dangling bonds at the interface, high fabrication costs involved, and so forth [18]. Thus, it is crucial to explore alternate materials, which can overcome the above-mentioned drawbacks for the development of multifunctional PDs.
The successful delamination of graphene in the revolutionary work by Geim and Novoselov in 2004 [19] ignited a plethora of research, in the field of two-dimensional (2D) layered materials and their heterostructures [20, 21, 22]. In the recent years, the amount of research focused on these layered materials has increased multifold. A layered material is nothing but an ultrathin phase of a material, scaled down to the level of atomic thickness, and is characterized by weak inter-layer van der Waals (vdW) forces and a strong intra-layer covalent interaction [23]. This makes these ultrathin materials possess electronic and optoelectronic properties such as band gap, mobility, etc., that are thickness-dependent [24], and thus, their novel chemical and physical characteristics pave a way towards the unexplored areas, both in the fields of fundamental research as well as engineering applications. In spite of possessing unparalleled electronic and optoelectronic properties such as high carrier mobility, dangling bonds-free surface, large current carrying capacities, excellent mechanical properties, the zero band gap or the gapless electronic structure of graphene [25] limits its use in realization of practical applications-based PDs, which demand switching behavior or in other words, a definite on/off state. This has led to the exploration of graphene alternatives with a substantial band gap, and researchers and scientists across the world have resurrected a class of conventional 2D materials known as the transition metal dichalcogenides (TMDCs), characterized by low-fabrication cost, chemical stability, earth-abundance and environment-friendly properties. Some of the well-studied TMDCs are molybdenum disulfide (MoS2), tungsten disulfide (WS2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), tungsten diselenide (WSe2), and so on [26, 27, 28]. As of now, semiconductors of the TMDC family have enabled tremendous accomplishments in the field of photodetection, such as from monofunctional to multifunctional PDs, from homogeneous to hybrid 2D semiconductors-based PDs, and from rigid to flexible electronic devices [29, 30, 31].
Regardless of the efforts of the researchers and scientists, some common challenges are still being faced related to fabrication and the performance of these TMDCs-based devices [18]. The challenges include growth of high-quality crystals, controlling the morphology and the thickness, scaling up the growth for industrial scale production, optimizing the device architectures, and so forth. To address these challenges, pulsed laser deposition (PLD) has emerged as a perfect tool for the synthesis of TMDCs. With the use of PLD, the actualization of high quality and wafer scale synthesis of TMDCs has become possible [32]. Eminently, PDs based on the PLD-synthesized TMDCs have exhibited competitive device performance parameters when compared with the commercial PDs, and thus, offer great opportunities towards the next generation photonics. In the subsequent section, we will give an introduction about TMDCs and their properties. Afterwards, the fundamentals of PLD will be discussed in detail, followed by the recent advancements in the PLD-grown TMDCs for photodetection application. Finally, we will conclude by highlighting the unresolved problems and suggest future perspectives in this evolving field of optoelectronics.
2. Transition metal dichalcogenides (TMDCs)
TMDCs are denoted by the general formula of MX2 where M and X represent a transition metal (Mo, Nb, W, Hf, Ti, and so on), and a chalcogen (S, Te, and Se), respectively. In the periodic table, groups IV-X belong to the transition metals and they contain different number of d-electrons. Thus, the difference in the valance d-electrons of different transition metals gives rise to the different electronic properties such as metallic, semiconducting, and superconducting [33]. TMDCs exist in a layered form at the atomic level, containing one or few monolayers. Figure 1(a) shows a schematic depicting the layered structure of MoS2.
Figure 1.
(a) Schematic showing a monolayer of a TMDC, where the atoms of transition metal are bonded through covalent bonds with the chalcogen atoms. These individual monolayers are stacked and held together by vdW forces to form the bulk structures. (b) Crystal structures of layered MoS2 with different stacking sequences as shown to form the two most common phases: trigonal prismatic (2H) and octahedral (1T). Figure is adapted from Ref. [23]. (c) Transformation of the band structure of 2H phase of MoS2 calculated by first principles from bulk to a single layer. Figure is adapted and reproduced with permission from Ref. [34].
A TMDC can exist in various structural phases which are a result of the different co-ordinations of the transition metal atom. The most common structural phases in which the TMDCs crystallize are the trigonal prismatic (2H) and the octahedral (1T) phase. These crystal phases can also be seen in the terms of different stacking sequences of the atoms (as a representative result, Figure 1(b) shows crystal structure of MoS2). The three atomic planes i.e. chalcogen– metal–chalcogen form the individual layers of TMDCs. The 2H phase corresponds to an ABA stacking, whereas, the 1T phase is characterized by an ABC stacking order. For most of the bulk TMDCs (MoS2, MoSe2, MoTe2, WS2, WSe2, etc.), the 2H phase is thermodynamically more stable than the metastable 1T phase. Tungsten ditelluride (WTe2) shows an exception where the most stable phase is the orthorhombic (1Td phase) at room temperature [33].
The assortment of chemical compositions as well as the different crystal structures of TMDCs results in varying band structure characters, which in turn lead to a wide range of electronic properties. In the thermodynamically most stable 2H phase, MoS2, WS2, MoSe2, and WSe2 show semiconducting behavior [33]. These semiconducting properties accentuated these TMDCs as potential 2D materials for next generation electronic devices. As a representative result, the basic characteristics of the band structure of MoS2 has been shown in Figure 1(c). The transformation of the band structure as calculated from density functional theory (DFT) for 2H-MoS2 upon increasing its thickness from monolayer form to the bulk has been shown in Figure 1(c). The positions of the conduction and valence band edges change with increasing the number of layers of MoS2, and the direct band gap in the monolayer form changes into an indirect band gap in the bulk material [33]. The calculated value of the band gap of the monolayer 2H-MoS2 is ~1.89 eV [35]. The experimentally observed value for the electronic band gap of 2H-MoS2 in its monolayer form is 2.15 eV [36]. Notably, the conduction band minimum and the valence band maximum are situated at the two inequivalent high-symmetry points, which represent the corners of the hexagonal Brillouin zone [33]. This attribute is common between monolayer 2H phase MoS2 (and the other group VI single-layer 2H phase TMDCs) and graphene and allows the observation of potential valleytronics applications.
Through the persistent efforts over the last decade, researchers have developed several techniques to produce ultrathin TMDCs. In principle, these techniques can be broadly classified into two categories. The first one is to produce TMDCs by thinning bulk crystals, which is called as a top-down technique. Different types of exfoliations (mechanical, chemical, etc.) fall under this category. Since different layers of 2D materials are held together by vdW interactions, therefore, the interlayer bonding is weak. Thus, under any external perturbations, bulk 2D materials are readily processed into their few-layered forms. The second category is to produce TMDCs through a bottom-up approach, where constituent atoms and molecules are assembled together to form continuous layers. These mainly include chemical vapor deposition (CVD), atomic layer deposition (ALD), magnetron sputtering, molecular beam epitaxy (MBE) and PLD.
As mentioned above, researchers have developed several methods to fabricate TMDCs. In spite of the substantial progress, none of the above techniques can meet the comprehensive demands for industrial-scale production, as in the terms of process simplicity, good scalability, excellent homogeneity and continuity, high quality of the products, high compositional and thickness control, low cost for mass production and higher safety. The techniques such as exfoliation, CVD and ALD suffer from a huge drawback that the growth process occurs in absence of high vacuum, which generally leads to unclean interfaces, and therefore, one has to compromise with the device performance. Moreover, exfoliation and CVD are further associated with low product yield as the films formed are non-continuous and in the range of several microns. Sputtering and MBE are much more sophisticated in terms of the interface quality due to the involvement of ultrahigh vacuum, however, sputtering is characterized by poor surface quality of the films whereas MBE poses drawbacks such as bulky and expensive setups, time-consuming growths, and limitations in terms of substrates. Such limitations further hinder the utilization of these growth methods for industrial scale fabrication of devices. Thus, research and development towards a potentially competent approach which can address the above issues is greatly required.
PLD is a synthesis technique where a high-power pulsed laser beam is focused on a target, which results in the vaporization of the material in the form of a plasma plume and this material gets deposited on a substrate in the form of a thin film. A typical illustration of a PLD process is shown in Figure 2. Compared with the conventional methods discussed above, PLD exhibits the following advantages:
PLD is the most versatile growth method where a focused and high-energy pulsed laser ionizes almost all types of materials, because of the generation of instantaneous and localized high temperatures up to tens of thousands of OC on the target’s surface. Therefore, majority of the materials can be ablated to form a plasma, which carries out the deposition. In addition, PLD exhibits an excellent compatibility with different substrates which provides numerous routes for the construction of heterojunctions-based devices.
PLD is highly scalable, because the plasma plume can be readily positioned and directed just by adjusting the external optical path of the laser beam. Consequently, PLD is very much suitable for the growth of wafer-scale and uniform TMDCs for practical industrial production. Serna et al. [38] have successfully fabricated continuous bilayers of MoS2 on sapphire with a diameter up to ~50.8 mm using PLD. Singh et al. [39] have also synthesized centimeter-scale MoS2 thin films on various substrates.
The substrate temperature required for the PLD growth of TMDCs is relatively low when compared with techniques like CVD and sputtering because the species (atoms, molecules, ions, etc.) ablated by the focused pulsed laser possess a very high energy, and therefore, can freely migrate on the substrate’s surface. Therefore, direct growth of TMDCs on substrates that are intolerable towards high temperature can be achieved with PLD. For instance, Singh et al. [39] have successfully fabricated MoS2 on InN at a low substrate temperature of 450°C. It may be noted that low temperature deposition is required for InN as it dissociates above 500°C.
PLD is a clean, highly efficient, safe, and highly controlled deposition technique where the product is highly continuous and uniform. Due to the ultrahigh vacuum growth conditions, the products of PLD are clean and contamination-free. Furthermore, Siegel et al. [32] fabricated MoS2 on centimeter-scale sapphire substrates using PLD, varying the thickness from 60 monolayers down to a single monolayer, just by tuning the number of laser pulses.
Figure 2.
Schematic view of a typical PLD process. Adapted from Ref. [37].
In the past few years, TMDCs have elicited tremendous research interest, owing to their novel properties in the 2D form, which has triggered a spark in the growth of TMDCs using PLD [18]. In this part of the chapter, a few reports describing the chronological developments in the area of PLD grown TMDCs have been briefly discussed. One of the earliest works on PLD deposited MoS2 was reported by Zabinski et al. [40], where they have prepared PbO-MoS2 thin films for tribological applications. Other early reports on MoS2 thin films by PLD include growth of amorphous MoS2 by McDevitt et al. [41] and MoS2 coatings for friction-related studies by Mosleh et al. [42]. The major advancements in this area have been achieved in the past few years. In 2010, Fominski et al. [43] have experimentally studied the fabrication of MoSex thin films with varying compositions obtained by PLD in vacuum condition and in presence of different rarefied gases. They also developed a process-based mathematical model which played a dominant role on the chemical composition of these thin films. Loh et al. [44] in 2014 fabricated MoS2 on different metals such as Ag, Ni, Al, and Cu by PLD. In 2015, a significant step towards the fabrication of transfer-free TMDC-based PDs was demonstrated by Serrao et al. [45] in which MoS2 was directly deposited on substrates like sapphire, SiC-6H and GaN. The first significant work towards the wafer-scale growth of TMDCs by PLD was done by Siegel et al. [32] who reported growth of centimeter-scale MoS2 thin films of varying thickness (from monolayer to 60 monolayers). Growth of other members of the TMDC family such as WS2 was also investigated simultaneously. In 2015, Loh et al. [46] synthesized WS2 thin films on Ag substrates by PLD and reported the thickness dependent Raman and PL spectra. However, the obtained WS2 was having a mixed phase (1T and 2H). In subsequent works, Yao et al. [47] obtained the pure 2H phase WS2 directly by PLD on insulating SiO2/Si substrates. The growth of selenides via PLD usually suffers from a large number of Se vacancies. Therefore, a two-step growth method was adopted for production of MoSe2 [48]. This included deposition of MoO3 film via PLD, followed by its selenization. Later on, Mohammed et al. [49] achieved 1–8 monolayers of WSe2 via single-step deposition. This was achieved through a hybrid PLD cluster, where a tungsten target was ablated by the laser beam and selenium vapors were synchronously provided from an effusion cell by thermal evaporation. In 2018, a single-step PLD approach was used by Seo et al. [50] to deposit WSe2 on Al2O3 and SiO2/Si substrates by using a Se-rich target. Lately, Gao et al. [51] demonstrated a two-step synthesis route to fabricate 2D WTe2, which included PLD of amorphous WTe2 target followed by annealing treatment of the thin films in a Te atmosphere. These reports suggest that the technique of PLD can be suitably applied for the successful production of various TMDCs. In the next section, we will discuss in detail about the fundamentals associated with PLD.
3. Basics of pulsed laser deposition
PLD falls under the category of physical vapor deposition and is a method used to synthesize materials (generally thin films) in an ultrahigh vacuum environment. The development in the field of laser-assisted film growth can be traced back to 1960, after the successful technical realization of the first laser by Maiman [52]. Following on from there, from just being a growth method for fundamental laboratory research, PLD has moved on to become a technique employed in industries. A typical PLD system mainly consists of a laser (usually an excimer laser), an optical path system consisting of apertures, lenses and reflectors, and a stainless-steel growth chamber equipped with gas paths, vacuum pumps, vacuum gauges, and a heating source [37]. The basic principle behind a PLD process is that a high-intensity pulsed laser interacts with the target or the source material (called ablation) and produces a plasma plume of the target material [37]. The formation of plasma involves a sequence of complex phenomena such as collision, localized heating and subsequent ionization of atoms and molecules. Afterwards, the plasma plume expands, travels downstream, condenses on the substrates and finally crystallizes into the desired materials [37]. Figure 3 shows the PLD setup located in Materials Research Centre, Indian Institute of Science, Bangalore, India.
Figure 3.
PLD setup in Materials Research Centre, Indian Institute of Science, Bangalore, India.
The major advantage of a PLD system is that the laser can be operated from outside the vacuum chamber. Thus, just by changing the optical paths of the laser beam, a single laser source can be used for multiple deposition systems. All the other components such as the target carousel, substrate holder, heater, vacuum gauges, and so on are mounted in the vacuum chamber. A set of optical components such as apertures and mirrors are used to focus the pulsed laser beam over the target surface. Therefore, a variety of materials (semiconductors, metals and insulators) can be grown by PLD just by optimizing the growth parameters and by incorporation of different gases during the process in a controlled manner. With this, the exact stoichiometry of the target material can be copied down onto the substrates, which is one of the major benefits of PLD over other deposition techniques. Some of the important parameters associated with PLD have been described below.
Laser source: A krypton fluoride (KrF) laser is a type of excimer laser, and with a wavelength of 248 nm, it is a deep UV laser which is commonly used for the growth of various thin films as the absorption spectrum of most of the inorganic materials lies in the range of 200–400 nm. Typically, excimer lasers contain a mixture of two gases: a noble gas such as argon, xenon or krypton; and a halogen such as chlorine or fluorine. Under suitable conditions of stimulation and pressure, an excimer molecule is created, which decays via a stimulated emission and a coherent beam of stimulated radiation is emitted in the UV range. The continuous emission is then converted into a pulse by various discharge mechanisms and a pulse width of ~10–20 nanoseconds (ns) can be achieved.
Laser fluence: The laser fluence or laser energy density is defined as the laser output energy per unit area and is a very important parameter which decides the proper ablation of the target where the laser beam interacts with the target. A minimum threshold laser fluence is required to carry out the proper ablation process, otherwise, only evaporation takes place. The plume formation depends upon the target conditions such as its density, porosity, morphology, and compositional impurities as well as the laser conditions such as laser pulse duration and laser pulse width. If the laser fluence is much above the threshold value, crystallographic defects and damage can occur in the deposited thin film because of the bombardment by the ablation particles possessing high kinetic energy. Also, it can lead to macroscopic particles ejection during the process of ablation, particulate formation on thin films as well as back-sputtering of species from the deposited thin film. Various mechanisms have been proposed for the formation of particulates and several methods have been devised to minimize these effects [53, 54].
Laser-target interactions: The three main processes taking place during the laser-target interaction are: (i) the laser beam interacts with the surface of the target and gets absorbed into surface layer; (ii) the removal of atomic species from the material is done by vaporization of the surface region in a non-equilibrium state; (iii) afterwards, rapid vaporization further produces a recoil pressure, which leads to the expulsion of the molten pool and produces the plasma plume, and the formed plasma is a collection of electrons, neutral atoms, ions, etc. Therefore, the absorption process is highly dependent on the target properties as well as the laser characteristics. Also, this absorption process is different for metals, insulators and semiconductors [55, 56]. When the laser beam interacts with the target, the photoenergy gets converted into electronic excitations immediately, and the energy relaxation through lattice takes place in ~1 picosecond (ps). Next, the photoenergy is transformed into heat diffusion (over a few microseconds (μs)), which results in the melting of the solid surface (in tens of ns). During the laser-target interactions, the localized temperature of the target reaches up to 10,000 OC or even higher, leading to the evaporation of the target material. At this point of time, the plume formation takes place (in the range of few μs). The plasma plume consists of atoms, electrons, ions and particulates of varying sizes, ranging from nanometer (nm) to micrometer (μm). This plasma reaches the substrate and undergoes re-solidification and condenses in the form of a thin film [53, 57].
In most of the cases, melting of a material depends on the rate of thermal conduction via lattice, which can be well described by the Fick’s laws of diffusion. If the heated volume of the material is smaller than or equivalent to the thickness of ablated layer per laser pulse, then congruent melting will take place. Hence, PLD offers the advantage of congruent melting and vaporization. The amount of heated volume depends on the time of the laser-target interaction, i.e. the pulse duration. For a pulse duration of ~10 ps, heat diffusion will not play a role in the melting and vaporization of the material, whereas, above ~20 ps, conventional heat diffusion dependent ablation occurs [57]. Therefore, the use of a pulsed laser with a pulse duration of a few ns is more likely to provide congruent ablation. This allows the PLD process to preserve the anion-cation stoichiometry of the target material during the mass transfer of the material from the target onto the substrate.
Ambient growth pressure: The background pressure during deposition is a very important and critical parameter that plays a significant role in the plume collisions and plasma dynamics. Keeping the right background pressure is of utmost importance in order to obtain controlled stoichiometric products during the PLD growth. A specific phase and composition of a material can be achieved under controlled and optimized conditions of background pressure at specific temperature. Plasma species with kinetic energies greater than 50 eV can re-sputter the material already deposited on the substrate and this usually leads to a lower deposition rate, modifications in the stoichiometry of the film, and increase the surface roughness. Controlling the background pressure can reduce re-sputtering of the deposited thin films. Increasing the background gas pressure to an optimum value slows down the highly energetic species in the dilating plasma plume [58].
Target-substrate distance: The target to substrate distance is a useful parameter for reducing the particulate formation since majority of the PLD depositions are carried out in high pressure conditions. If the thin film is deposited in vacuum environment, the target to substrate distance mainly affects the angular spread of the ejected flux. Thus, the effect of target to substrate distance and the background gas pressures is inter-related. The plume length decreases as the ambient gas pressure increases, because of the increased collisions between the plume species and background gas molecules. Therefore, a smaller target to substrate distance should be kept in the case of depositions carried out at high pressures.
Deposition rate: This mainly depends on the repetition rate or the frequency of laser shots which controls the volume or amount of the plume species reaching the substrate and, thus, controls the thickness of the deposited thin film. Deposition rate also depends on the background gas pressure as described previously and mainly modulates the super-saturation process during deposition, which has an influence on the critical nucleation point and the density of nucleation sites. Also, ultra-smooth thin films can be obtained at optimized deposition rates.
Substrate temperature: Substrate temperature plays a critical role in terms of the diffusion barrier during the growth process and strongly affects the growth modes. It influences the nucleation process as well as the mobility of the condensed species across the substrate, and therefore, is crucial in deciding the phase boundary in the crystalline thin films during PLD growth. At lower substrate temperatures, the thin film produced may be amorphous or polycrystalline due to the lower nucleation rate, as the thermal energy provided is too small for overcoming the nucleation barrier. When the substrate temperature is too high, the nucleation rate gets limited due to the high rate of atomic exchange between the solid and gaseous species. Thus, an optimum temperature is required for the easy crystallization of thin films as it becomes easier to overcome the nucleation barrier and form nuclei on the substrate [57].
4. Recent advancements in the PLD growth of TMDCs-based PDs
In general, the PLD-grown TMDCs-based PDs exhibit device performance that is comparable with the PDs based on traditional bulk semiconductors. Additionally, PLD is also beneficial for scalable production up to the wafer-scale. Therefore, growth of these TMDCs through PLD for applications in photodetection shows a tremendous potential to translate the fundamental laboratory research to realization of industrial and practical applications.
MoS2 is probably the most studied material among various TMDCs and was probably the first member to be fabricated by PLD. One of the earliest investigations on the photodetection studies of MoS2-based PDs was done by Alkis et al. [59], in which the authors have fabricated MoS2 nanocrystallites through PLD in deionized water and have demonstrated ultraviolet photodetection using the thin films of the obtained MoS2 nanocrystallites. Mostly, the PLD fabricated PDs based on the TMDCs are in the form of thin films. The earliest MoS2 thin film-based PD grown by PLD can be traced back to 2014, when Late et al. [60] synthesized wafer-scale MoS2 thin films on flexible kapton substrates. The devices showed a good photoresponse towards UV light, with stable response and recovery in self-powered mode (Figure 4a and b). The origination of this self-powered behavior might be from the unintentional inhomogeneities in the contact electrodes [61, 62]. However, the observed response was very weak in the zero-biased mode. This work demonstrated that layered TMDCs can be promising candidates to be used as flexible devices in future photonic applications. In the meantime, researchers across the world started to explore the synthesis of other TMDCs by PLD. In 2015, Yao et al. [47] deposited multilayered WS2 by PLD and performed detailed and systematic investigations on its photodetection properties (Figure 4c–f). The synthesized device exhibited a broadband and reproducible photoresponse with good stability. The photoresponse in ambient conditions reached 0.51 AW−1, which was several orders higher than the CVD-grown WS2 thin films. In vacuum conditions, the responsivity was found to be enhanced to a value of 0.7 AW−1. The lower responsivity in ambient conditions has been explained on the basis of oxygen molecules adsorbed on the surface of WS2 which trap conduction electrons, and form O2−. These species act as recombination centres for the photogenerated carriers. Thus, a greater number of adsorbed O2 molecules are present in ambient air environment, which hampers the responsivity of the device. Furthermore, the device maintained a stable and reproducible photoswitching even after one-month of storage in air, indicating the robustness of the device.
Figure 4.
(a) MoS2 thin film deposited on flexible kapton substrate and (b) temporal response of the device in zero-bias mode. Figures have been reproduced with permission from Ref. [60]. (c) Cross-sectional schematic view of the WS2-based photoresistor, (d) temporal response of the device in air, (e) I-V curves of the WS2-based device in vacuum and in air, and (f) schematic of the photodetection mechanism based on adsorption and desorption of O2 molecules. Figures have been reproduced with permission from Ref. [47].
The progress in the PLD growth of TMDCs has been quite significant, however, the crystal quality normally remains inferior when compared to the bulk natural crystals. This opens a window to further improve the device quality as well as the performance of PLD-fabricated PDs. One such work has been reported recently, where Wang et al. [63] have attained a dramatic improvement in the quality of the PLD-synthesized WS2 photoresistors by using a post-synthesis annealing procedure. With increase in the post-deposition annealing temperature from 310 to 610°C, the device performance parameters of the WS2-based PD (annealed at 610°C) enhanced by 2–3 orders of magnitude when compared to the devices annealed at lower temperatures. Annealing treatment usually provides a sufficient amount of energy and time to the atoms and molecules, for the structural reconstruction to annihilate crystal defects, and thus, has been adopted as a universal post-fabrication technique for improving the quality of the products. In another work, Yao et al. [64] have synthesized a hybrid WS2/Bi2Te3/SiO2/Si-based PD. The purpose of the insertion of the Bi2Te3 layer in between WS2 and SiO2 was to passivate the interface. The device demonstrated a stable, reproducible and broadband photoresponse (370 to 1550 nm). Moreover, the device showed a high photoresponsivity of 30.7 AW−1 and a pronounced specific detectivity of 2.3 × 1011 Jones with a rise time of 20 ms. The performance of the detector has been attributed to the surface passivation of SiO2 by the Bi2Te3 interfacial layer. SiO2 surface possess a lot of unscreened dangling bonds. When WS2 is directly deposited on SiO2, these bonds can introduce a large density of defects at the bottom of the WS2 layer, which will act as recombination and scattering centers for the photogenerated charge carriers. With the introduction of Bi2Te3 layer, these dangling bonds are greatly suppressed, and this results in the growth of WS2 film with high crystalline quality, which eventually enhances the PD’s performance.
Spectral range of a PD is equally important when compared with the other figures of merit and altering the effective wavelength range of TMDC-based PDs is extremely important for specific applications. It has been shown that by introducing defect states in the forbidden gap of a semiconductor, the detection range can be dramatically extended, and sub-band gap detection can be accomplished. Xie et al. [65] have demonstrated ultra-broadband MoS2-based PDs through PLD by forming sulfur vacancies in MoS2. The S/Mo atomic ratio was modified from 1.89 to 1.94 by controlling the number of laser pulses from 1200 to 300, resulting in a dramatic increase in the band gap of the semiconductor. Consequently, the S-deficient MoS2-based PD exhibited an unprecedented ultra-broadband detection range from 445 to 2717 nm. However, theoretical calculations have been done which indicated that the Mo vacancies in MoS2 possess a higher capability for narrowing the band gap. Therefore, in a subsequent work, Xie et al. [66] have synthesized a series of Mo-deficient MoS2-based PDs by moderating the target to substrate distance during the PLD growth. As a result of these modulations, the effective spectral range of a MoS2.17 PD spanned all over from 445 nm to 9536 nm. Although the detection range can be extended up to mid infrared (MIR) with the introduction of the defect states, however, it is accompanied by certain challenges that hinders the usability of this method in practical devices. These include the control over the creation of these defects, which is still an unresolved problem. Furthermore, the electronic properties of the charge carriers are severely hampered owing to the increased scattering effects from these defect states. Thus, such devices often suffer from meager responsivities and slower response speeds.
Recently, Jiao et al. [67] have synthesized high-quality and wafer-scale 2D layered MoS2 thin films by PLD. The device exhibited competitive device performance to the commercial Si and Ge-based PDs. The value of the responsivity was recorded to be 1.96 AW−1 for single layer MoS2-based device, under 300 nm light illumination (Figure 5). The PD shows a broadband photoresponse ranging from UV to NIR, with a fast response of 96 ms. This enhancement in the performance was attributed to the variation in the Schottky barrier at the Au/MoS2 interface.
Figure 5.
(a) Schematic of the interdigital patterned gold electrodes to form a metal-semiconductor-metal type contact, and (b) the wavelength dependence of responsivity (300 to 900 nm) for the device. Figures have been reproduced with permission from Ref. [67].
The above discussed PLD-grown TMDC-based PDs are based on the metal-semiconductor-metal type device configuration, and suffer from relatively lower photoresponsivity, low on/off ratios, narrowband detection and slower detection speed. Hence, strategies are being developed to overcome these limitations. PDs having transparent electrodes such as indium tin oxide (ITO) and graphene, instead of the conventional metal contacts and PDs based on heterojunctions of two or more materials have many advantages such as low value of dark current, higher on/off current ratios, broadband detection range, and higher responsivities due to favorable band alignments.
One such work was carried out in 2016, when Zheng et al. [68] successfully prepared centimeter-scale and highly-crystalline WSe2 thin films on polyimide substrates by the technique of PLD and have fabricated high-performance PDs based on these WSe2 thin films. They obtained a broadband spectral response, ranging from 370 to 1064 nm. Moreover, a reproducible photoresponsivity approaching up to 0.92 AW−1, an EQE of 180% and a fast response speed of 0.9 s have also been achieved. The PD also exhibited excellent air durability and mechanical flexibility. The enhanced performance has been attributed to the good Ohmic contacts WSe2 forms with ITO, because of a low mismatch between the work functions of the two materials. Due to the Ohmic contacts, the carriers can be efficiently injected through the ITO electrodes under an applied bias, which will result in generation of a high photocurrent. Ohmic contacts lead to photodetection mechanisms based on the intrinsic properties of the photosensitive material under light irradiation.
Using a similar approach of integration of ITO electrodes on the device, Kumar et al. [69] have reported a UV PD which utilizes few layered MoS2 deposited by PLD. The device shows a high responsivity of 3 × 104 AW−1 and detectivity of 1.81 × 1014 Jones, at a nominal voltage of 2 V with fast response time of 32 ms. This performance is better than most of the reported devices based on 2D layered materials. The PD exhibited a very low value of dark current (~10−10 A) which is the reason behind such an excellent device performance. This may be because of suitable band alignment with the ITO electrodes as well as the deposition of high-quality films as the deposition was carried out in the presence of nitrogen gas, leading to lower number of sulfur vacancies.
Till now, all the above reported devices require some external bias for obtaining significant photodetection. Over the years, PDs which consume no external power have attracted a lot of attention because in the current scenario of energy crisis, a lot of research has been focused on energy producing and energy storage devices [70, 71, 72, 73, 74]. Such self-powered PDs depend on the interfacial built-in potential which enhances the effective separation of photogenerated carriers. This built-in electric potential also suppresses the dark current, which is another benefit for such PDs. Therefore, these self-powered devices have a great prospect for the next-generation PDs.
In 2015, Yao et al. [75] designed a Bi/WS2/Si heterojunction-based PD by depositing polycrystalline WS2 and Bi thin films on a p-type Si substrate by PLD (Figure 6). The PD exhibited a decent responsivity of 0.42 AW−1 and a high detectivity of 1.36 × 1013 Jones with ultrahigh sensitivity. It was observed that the performance of the Bi/Si heterointerface was enhanced by the insertion of the WS2 film. The enhanced device performance has been attributed to the effective passivation of the junction, and enhanced light absorption. Moreover, due to the favorable band alignment, WS2 acts as a selective carrier blocker, which further enhances the device performance.
Figure 6.
(a) Transient behavior of the Bi/Si and Bi/WS2/Si PDs under zero bias. (b) Corresponding single on-off cycle. Schematic of the energy band diagrams of the (c) Bi/Si and (d) Bi/WS2/Si heterointerfaces. Figures have been reproduced with permission from Ref. [75].
Recently, Singh et al. [4] demonstrated an MoS2/AlN/Si-based PD grown by PLD, thus combining the excellent and unique properties of MoS2 with the matured technologies of Si and III-nitride semiconductors. Moreover, due to a large difference in the work functions of these materials, the band bending of the heterojunction at the interfaces resulted in self-powered behavior. The vertical transport of the PD exhibited an exceptional broadband photoresponse (300–1100 nm) in the self-powered mode. The device shows a responsivity of 9.93 AW−1 under zero-bias condition with ultrafast response speeds (response/recovery times - 12.5/14.9 μs). The photoresponse of MoS2/Si has also been given, to show the importance of inserting the AlN layer. The MoS2/Si PD exhibits a responsivity of 1.88 AW−1 (~5 times less) in self-powered mode. The authors have shown that the native oxygen defects are present throughout the AlN layer, and this has been confirmed with the help of X-ray photoelectron spectroscopy and transmission electron microscopy. These oxygen impurities form deep donor states in AlN and modulate the transport of the charge carriers, and this leads to the enhanced performance of the MoS2/AlN/Si-based device (Figure 7).
Figure 7.
(a) Spectral response of the MoS2/AlN/Si-based PD. (b) Schematic of the deep defect states-modulated carrier transport in MoS2/AlN/Si-based device. Figures have been reproduced with permission from Ref. [4].
5. Summary
The past few years have undoubtedly witnessed tremendous advances in the PLD growth of TMDCs and their applications in the field of photodetection. In this chapter, the basic properties of TMDCs and the common growth techniques employed for their fabrication have been reviewed briefly, followed by a detailed and elaborated discussion about PLD and the important parameters associated with it. Finally, a progressive investigation about the PDs based on TMDCs fabricated through PLD has been discussed. These extensive achievements in the field of photodetection have unquestionably established PLD as one of the most competitive and reliable methods for fabricating industrial-scale and high-quality TMDCs. PLD, therefore, certainly has a lot of potential to contribute in the development of the next-generation TMDCs-based PDs in the future.
6. Looking into the future
Based on the analysis of the previous reports in this area, an outlook regarding the future of PLD-synthesized TMDCs and the related follow-up research work has been summarized below.
The research on the PLD-fabricated TMDCs-based PDs is still in its nascent stage and therefore, there is still a room for improvement in the crystal-quality of the PLD-grown thin films, by selecting appropriate substrates and by further tuning and optimizing the various unexplored growth parameters, such as annealing temperature and time, cooling ramp rate, geometry of the laser spot, surface morphology of the source targets, laser frequency, and so on [18].
Apart from a few reports, most of the research regarding PLD growth of TMDCs for photodetection application is based on the use of a single photosensitive material. Therefore, promising results are expected on the exploration of the heterojunctions of these layered materials with established bulk semiconductors like III-nitrides, which have shown great results in this field. Moreover, TMDCs can serve as excellent substrates for high quality and epitaxial growth of III-nitrides, which would lead to better device performance.
The use of transparent 2D semiconductors such as graphene or graphene derivatives and semi-metallic phase of TMDCs, can be used in place of the conventional metal electrodes, as they maximize the area of light absorption along with having outstanding electronic properties.
Till date, researchers and scientists across the world have mostly exploited heterojunctions of TMDCs in their thin film forms. Heterointerfaces based on one dimensional (1D) nanostructures may provide new routes for the development of high-performance devices. The nanowire-based heterostructures of the TMDCs with growth along these nanowires or a core-shell structure will enable a much higher surface to volume ratio and therefore, a larger active interface. This will lead to enhancement in the photoresponse and superior optoelectronic performance.
As a concluding statement, PLD has been proven to be a promising synthesis technique for TMDCs for applications in photodetection, and these PDs have shown outstanding performance that can compete with those of the commercially available PDs. The fabrication through PLD is cost-effective and scalable, and hence, PLD is a perfect tool for fabrication of practical devices for optoelectronic applications at an industrial scale production.
Acknowledgments
D.K.S. is thankful to Council of Scientific and Industrial Research, Government of India, New Delhi for providing senior research fellowship. S.B.K. acknowledges INSA senior scientist fellowship.
\n',keywords:"two-dimensional semiconductors, transition metal dichalcogenides, pulsed laser deposition, photodetectors",chapterPDFUrl:"https://cdn.intechopen.com/pdfs/73695.pdf",chapterXML:"https://mts.intechopen.com/source/xml/73695.xml",downloadPdfUrl:"/chapter/pdf-download/73695",previewPdfUrl:"/chapter/pdf-preview/73695",totalDownloads:433,totalViews:0,totalCrossrefCites:1,dateSubmitted:"July 28th 2020",dateReviewed:"September 29th 2020",datePrePublished:"December 18th 2020",datePublished:"July 14th 2021",dateFinished:"October 21st 2020",readingETA:"0",abstract:"From the past few decades, photodetectors (PDs) are being regarded as crucial components of many photonic devices which are being used in various important applications. However, the PDs based on the traditional bulk semiconductors still face a lot of challenges as far as the device performance is concerned. To overcome these limitations, a novel class of two-dimensional materials known as transition metal dichalcogenides (TMDCs) has shown great promise. The TMDCs-based PDs have been reported to exhibit competitive figures of merit to the state-of-the-art PDs, however, their production is still limited to laboratory scale due to limitations in the conventional fabrication methods. Compared to these traditional synthesis approaches, the technique of pulsed laser deposition (PLD) offers several merits. PLD is a physical vapor deposition approach, which is performed in an ultrahigh-vacuum environment. Therefore, the products are expected to be clean and free from contaminants. Most importantly, PLD enables actualization of large-area thin films, which can have a significant potential in the modern semiconductor industry. In the current chapter, the growth of TMDCs by PLD for applications in photodetection has been discussed, with a detailed analysis on the recent advancements in this area. The chapter will be concluded by providing an outlook and perspective on the strategies to overcome the shortcomings associated with the current devices.",reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/73695",risUrl:"/chapter/ris/73695",signatures:"Deependra Kumar Singh, Karuna Kar Nanda and Saluru Baba Krupanidhi",book:{id:"10481",type:"book",title:"Practical Applications of Laser Ablation",subtitle:null,fullTitle:"Practical Applications of Laser Ablation",slug:"practical-applications-of-laser-ablation",publishedDate:"July 14th 2021",bookSignature:"Dongfang Yang",coverURL:"https://cdn.intechopen.com/books/images_new/10481.jpg",licenceType:"CC BY 3.0",editedByType:"Edited by",isbn:"978-1-83968-304-6",printIsbn:"978-1-83968-303-9",pdfIsbn:"978-1-83968-305-3",isAvailableForWebshopOrdering:!0,editors:[{id:"177814",title:"Dr.",name:"Dongfang",middleName:null,surname:"Yang",slug:"dongfang-yang",fullName:"Dongfang Yang"}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"}},authors:[{id:"328314",title:"Emeritus Prof.",name:"Saluru Baba",middleName:null,surname:"Krupanidhi",fullName:"Saluru Baba Krupanidhi",slug:"saluru-baba-krupanidhi",email:"sbkrupanidhi@gmail.com",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:null},{id:"331999",title:"Mr.",name:"Deependra Kumar",middleName:null,surname:"Singh",fullName:"Deependra Kumar Singh",slug:"deependra-kumar-singh",email:"deependras@iisc.ac.in",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"Indian Institute of Science Bangalore",institutionURL:null,country:{name:"India"}}},{id:"332001",title:"Prof.",name:"Karuna Kar",middleName:null,surname:"Nanda",fullName:"Karuna Kar Nanda",slug:"karuna-kar-nanda",email:"nanda@iisc.ac.in",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"Indian Institute of Science Bangalore",institutionURL:null,country:{name:"India"}}}],sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Transition metal dichalcogenides (TMDCs)",level:"1"},{id:"sec_3",title:"3. Basics of pulsed laser deposition",level:"1"},{id:"sec_4",title:"4. Recent advancements in the PLD growth of TMDCs-based PDs",level:"1"},{id:"sec_5",title:"5. Summary",level:"1"},{id:"sec_6",title:"6. Looking into the future",level:"1"},{id:"sec_7",title:"Acknowledgments",level:"1"}],chapterReferences:[{id:"B1",body:'Wu W, Zhang Q, Zhou X, Li L, Su J, Wang F, Zhai T. Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures. Nano Energy. 2018;51: 45-53.'},{id:"B2",body:'Singh RK, Kumar J, Kumar A, Kumar V, Kant R, Singh R. Poly(3-hexylthiophene): Functionalized single-walled carbon nanotubes: (6,6)-phenyl-C61-butyric acid methyl ester composites for photovoltaic cell at ambient condition. Solar Energy Materials and Solar Cells. 2010;94(12):2386-94.'},{id:"B3",body:'Khan MA, Nanda KK, Krupanidhi SB. 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Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm. Advanced Materials. 2017;29(17):1605972.'},{id:"B66",body:'Xie Y, Liang F, Wang D, Chi S, Yu H, Lin Z, et al. Room-Temperature Ultrabroadband Photodetection with MoS2 by Electronic-Structure Engineering Strategy. Advanced Materials. 2018;30(50):1804858.'},{id:"B67",body:'Jiao L, Jie W, Yang Z, Wang Y, Chen Z, Zhang X, et al. Layer-dependent photoresponse of 2D MoS2 films prepared by pulsed laser deposition. Journal of Materials Chemistry C. 2019;7(9):2522-9.'},{id:"B68",body:'Zheng Z, Zhang T, Yao J, Zhang Y, Xu J, Yang G. Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices. Nanotechnology. 2016;27(22):225501.'},{id:"B69",body:'Kumar S, Sharma A, Ho YT, Pandey A, Tomar M, Kapoor AK, et al. High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique. Journal of Alloys and Compounds. 2020;835:155222.'},{id:"B70",body:'Shi D, Wang G, Li C, Shen X, Nie Q. Preparation and thermoelectric properties of MoTe2 thin films by magnetron co-sputtering. Vacuum. 2017;138:101-4.'},{id:"B71",body:'Kumar A, Singh RK, Singh HK, Srivastava P, Singh R. Enhanced capacitance and stability of p-toluenesulfonate doped polypyrrole/carbon composite for electrode application in electrochemical capacitors. Journal of Power Sources. 2014;246:800-7.'},{id:"B72",body:'Kumar S, Chaudhary D, Khare N. Enhanced thermoelectric figure of merit in Bi2Te3–CNT–PEDOT nanocomposite by introducing conducting interfaces in Bi2Te3 nanostructures. APL Materials. 2019;7(8):081123.'},{id:"B73",body:'Kumar A, Singh RK, Singh HK, Srivastava P, Singh R. Mechanism of direct current electrical charge conduction in p-toluenesulfonate doped polypyrrole/carbon composites. Journal of Applied Physics. 2014;115(10):103702.'},{id:"B74",body:'Kumar A, Singh HK, Singh RK, Singh R, Srivastava P. P-toluenesulfonate doped polypyrrole/carbon composite electrode and a process for the preparation thereof. United States patent US 10,074,453. 2018.'},{id:"B75",body:'Yao J, Zheng Z, Shao J, Yang G. Promoting Photosensitivity and Detectivity of the Bi/Si Heterojunction Photodetector by Inserting a WS2 Layer. ACS Applied Materials & Interfaces. 2015;7(48):26701-8.'}],footnotes:[],contributors:[{corresp:null,contributorFullName:"Deependra Kumar Singh",address:null,affiliation:'
Materials Research Centre, Indian Institute of Science, Bangalore, India
'},{corresp:null,contributorFullName:"Karuna Kar Nanda",address:null,affiliation:'
Materials Research Centre, Indian Institute of Science, Bangalore, India
'},{corresp:"yes",contributorFullName:"Saluru Baba Krupanidhi",address:"sbkrupanidhi@gmail.com",affiliation:'
Materials Research Centre, Indian Institute of Science, Bangalore, India
'}],corrections:null},book:{id:"10481",type:"book",title:"Practical Applications of Laser Ablation",subtitle:null,fullTitle:"Practical Applications of Laser Ablation",slug:"practical-applications-of-laser-ablation",publishedDate:"July 14th 2021",bookSignature:"Dongfang Yang",coverURL:"https://cdn.intechopen.com/books/images_new/10481.jpg",licenceType:"CC BY 3.0",editedByType:"Edited by",isbn:"978-1-83968-304-6",printIsbn:"978-1-83968-303-9",pdfIsbn:"978-1-83968-305-3",isAvailableForWebshopOrdering:!0,editors:[{id:"177814",title:"Dr.",name:"Dongfang",middleName:null,surname:"Yang",slug:"dongfang-yang",fullName:"Dongfang Yang"}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"}}},profile:{item:{id:"199673",title:"Prof.",name:"Gunnar",middleName:null,surname:"Jacks",email:"gunnjack@kth.se",fullName:"Gunnar Jacks",slug:"gunnar-jacks",position:null,biography:"Graduated as Ph D from Royal Inst. of Technology in Stockholm 1973. A B Sc in medicine was gained Karolinska Inst. in Stockholm 1971 to get a background in water and health issues, important throughout the professional activities. Professor in groundwater chemistry at Royal Inst. of Technology in Stockholm from 1986. Worked in India for three years for Central Groundwater Board of India. Participated in research projects in Finland, Norway, Italy, Albania, Vietnam, Laos, Thailand, Bangladesh, Oman, Eritrea, Botswana, Ghana and Mali. Arsenic problems in groundwater in Bangladesh and West Bengal in India have been a dominating occupation during the last years. Excess fluoride in groundwater causing dental and skeletal fluorosis in India has been another important study subject. Other important issue are coastal aquifers in Kerala in India and in Oman.",institutionString:"Royal Institute of Technology (KTH)",profilePictureURL:"https://mts.intechopen.com/storage/users/199673/images/system/199673.jpeg",totalCites:0,totalChapterViews:"0",outsideEditionCount:0,totalAuthoredChapters:"2",totalEditedBooks:"0",personalWebsiteURL:null,twitterURL:null,linkedinURL:null,institution:{name:"Royal Institute of Technology",institutionURL:null,country:{name:"Sweden"}}},booksEdited:[],chaptersAuthored:[{id:"55327",title:"Redox Reactions in Groundwater with Health Implications",slug:"redox-reactions-in-groundwater-with-health-implications",abstract:"Mobilisation into groundwater of many trace elements are redox dependant and of health concern. A short list includes arsenic, manganese, chromium, selenium, nitrogen as nitrate and uranium. Arsenic is mobile in groundwater essentially under two conditions, under reducing conditions mobilising ferrous iron and arsenite and at high pH when the ferric oxyhydroxides lose their positive charge. Manganese is mobilised under moderately reducing conditions as Mn2+ and might affect the mental capacity at chronic exposure from drinking water. Chromium is mobile as carcinogenic chromate under oxidising conditions. Manganese oxides may oxidise Cr(III) solids. Chromium may come from natural as well as anthropogenic sources. Selenium, an essential element, rarely exceeds permissible limits but irrigation with groundwater with elevated selenium could cause toxic selenium intake via food. Selenium is mobile in groundwater under oxidising conditions. Nitrate from excess use of fertilisers may be a problem for bottle-fed children below the age of 1 year, forming methaemoglobinemia. Uranium is mobile under oxidising conditions as U(VI). Mobility and toxicity depends on numerous factors. The threat from uranium is its effect on the readsorption in the kidney of water and salts from the primary urine. Oxidation state and speciation govern uranium mobility.",signatures:"Gunnar Jacks",authors:[{id:"199673",title:"Prof.",name:"Gunnar",surname:"Jacks",fullName:"Gunnar Jacks",slug:"gunnar-jacks",email:"gunnjack@kth.se"}],book:{id:"5913",title:"Redox",slug:"redox-principles-and-advanced-applications",productType:{id:"1",title:"Edited Volume"}}},{id:"58756",title:"Recharge and Turnover of Groundwater in Coastal Aquifers with Emphasis on Hydrochemistry and Isotopes",slug:"recharge-and-turnover-of-groundwater-in-coastal-aquifers-with-emphasis-on-hydrochemistry-and-isotope",abstract:"Coastal aquifers are globally subject to considerable stress. The population density is often high in coastal areas, and in addition, the coastal plains often have good agricultural soils demanding irrigation. While a portion of the irrigation can be provided by rivers, local groundwater is also used adding to the water requirement. Many coastal aquifers are large with a slow turnover of the groundwater and recharge is difficult to assess. This review is aimed at giving an overview of the hydrochemistry with an emphasis of giving insight into the groundwater recharge and the sustainability of the groundwater quality. The past climate history has given an imprint of hydrochemistry of especially coastal aquifers.",signatures:"Gunnar Jacks and Satheesachandran Thambi",authors:[{id:"199673",title:"Prof.",name:"Gunnar",surname:"Jacks",fullName:"Gunnar Jacks",slug:"gunnar-jacks",email:"gunnjack@kth.se"},{id:"211234",title:"Dr.",name:"Satheesachandran",surname:"Thambi",fullName:"Satheesachandran Thambi",slug:"satheesachandran-thambi",email:"dsthambi@gmail.com"},{id:"223815",title:"Dr.",name:"Sateechandran",surname:"Thambi",fullName:"Sateechandran Thambi",slug:"sateechandran-thambi",email:"thambi@gmail.com"}],book:{id:"6270",title:"Aquifers",slug:"aquifers-matrix-and-fluids",productType:{id:"1",title:"Edited Volume"}}}],collaborators:[{id:"142355",title:"Dr.",name:"Mauricio",surname:"Díaz Muñoz",slug:"mauricio-diaz-munoz",fullName:"Mauricio Díaz Muñoz",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"145905",title:"Dr.",name:"Isabel",surname:"Méndez",slug:"isabel-mendez",fullName:"Isabel Méndez",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"National Autonomous University of Mexico",institutionURL:null,country:{name:"Mexico"}}},{id:"190870",title:"Dr.",name:"Agustín G.",surname:"Asuero",slug:"agustin-g.-asuero",fullName:"Agustín G. Asuero",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Seville",institutionURL:null,country:{name:"Spain"}}},{id:"190871",title:"Dr.",name:"Julia",surname:"Martín",slug:"julia-martin",fullName:"Julia Martín",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Seville",institutionURL:null,country:{name:"Spain"}}},{id:"199579",title:"Associate Prof.",name:"Xin",surname:"Wang",slug:"xin-wang",fullName:"Xin Wang",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Fourth Military Medical University",institutionURL:null,country:{name:"China"}}},{id:"203696",title:"Ms.",name:"Laura",surname:"Ortega Estévez",slug:"laura-ortega-estevez",fullName:"Laura Ortega Estévez",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"205511",title:"Dr.",name:"Francisco",surname:"Vázquez-Cuevas",slug:"francisco-vazquez-cuevas",fullName:"Francisco Vázquez-Cuevas",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"205512",title:"Dr.",name:"Rolando",surname:"Hernández-Muñoz",slug:"rolando-hernandez-munoz",fullName:"Rolando Hernández-Muñoz",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"205513",title:"BSc.",name:"Héctor",surname:"Valente-Godínez",slug:"hector-valente-godinez",fullName:"Héctor Valente-Godínez",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"205514",title:"Dr.",name:"Olivia",surname:"Vázquez-Martínez",slug:"olivia-vazquez-martinez",fullName:"Olivia Vázquez-Martínez",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null}]},generic:{page:{slug:"our-story",title:"Our story",intro:"
The company was founded in Vienna in 2004 by Alex Lazinica and Vedran Kordic, two PhD students researching robotics. While completing our PhDs, we found it difficult to access the research we needed. So, we decided to create a new Open Access publisher. A better one, where researchers like us could find the information they needed easily. The result is IntechOpen, an Open Access publisher that puts the academic needs of the researchers before the business interests of publishers.
",metaTitle:"Our story",metaDescription:"The company was founded in Vienna in 2004 by Alex Lazinica and Vedran Kordic, two PhD students researching robotics. While completing our PhDs, we found it difficult to access the research we needed. So, we decided to create a new Open Access publisher. A better one, where researchers like us could find the information they needed easily. The result is IntechOpen, an Open Access publisher that puts the academic needs of the researchers before the business interests of publishers.",metaKeywords:null,canonicalURL:"/page/our-story",contentRaw:'[{"type":"htmlEditorComponent","content":"
We started by publishing journals and books from the fields of science we were most familiar with - AI, robotics, manufacturing and operations research. Through our growing network of institutions and authors, we soon expanded into related fields like environmental engineering, nanotechnology, computer science, renewable energy and electrical engineering, Today, we are the world’s largest Open Access publisher of scientific research, with over 4,200 books and 54,000 scientific works including peer-reviewed content from more than 116,000 scientists spanning 161 countries. Our authors range from globally-renowned Nobel Prize winners to up-and-coming researchers at the cutting edge of scientific discovery.
\\n\\n
In the same year that IntechOpen was founded, we launched what was at the time the first ever Open Access, peer-reviewed journal in its field: the International Journal of Advanced Robotic Systems (IJARS).
\\n\\n
The IntechOpen timeline
\\n\\n
2004
\\n\\n
\\n\\t
Intech Open is founded in Vienna, Austria, by Alex Lazinica and Vedran Kordic, two PhD students, and their first Open Access journals and books are published.
\\n\\t
Alex and Vedran launch the first Open Access, peer-reviewed robotics journal and IntechOpen’s flagship publication, the International Journal of Advanced Robotic Systems (IJARS).
\\n
\\n\\n
2005
\\n\\n
\\n\\t
IntechOpen publishes its first Open Access book: Cutting Edge Robotics.
\\n
\\n\\n
2006
\\n\\n
\\n\\t
IntechOpen publishes a special issue of IJARS, featuring contributions from NASA scientists regarding the Mars Exploration Rover missions.
\\n
\\n\\n
2008
\\n\\n
\\n\\t
Downloads milestone: 200,000 downloads reached
\\n
\\n\\n
2009
\\n\\n
\\n\\t
Publishing milestone: the first 100 Open Access STM books are published
\\n
\\n\\n
2010
\\n\\n
\\n\\t
Downloads milestone: one million downloads reached
\\n\\t
IntechOpen expands its book publishing into a new field: medicine.
\\n
\\n\\n
2011
\\n\\n
\\n\\t
Publishing milestone: More than five million downloads reached
\\n\\t
IntechOpen publishes 1996 Nobel Prize in Chemistry winner Harold W. Kroto’s “Strategies to Successfully Cross-Link Carbon Nanotubes”. Find it here.
\\n\\t
IntechOpen and TBI collaborate on a project to explore the changing needs of researchers and the evolving ways that they discover, publish and exchange information. The result is the survey “Author Attitudes Towards Open Access Publishing: A Market Research Program”.
\\n\\t
IntechOpen hosts SHOW - Share Open Access Worldwide; a series of lectures, debates, round-tables and events to bring people together in discussion of open source principles, intellectual property, content licensing innovations, remixed and shared culture and free knowledge.
\\n
\\n\\n
2012
\\n\\n
\\n\\t
Publishing milestone: 10 million downloads reached
\\n\\t
IntechOpen holds Interact2012, a free series of workshops held by figureheads of the scientific community including Professor Hiroshi Ishiguro, director of the Intelligent Robotics Laboratory, who took the audience through some of the most impressive human-robot interactions observed in his lab.
\\n
\\n\\n
2013
\\n\\n
\\n\\t
IntechOpen joins the Committee on Publication Ethics (COPE) as part of a commitment to guaranteeing the highest standards of publishing.
\\n
\\n\\n
2014
\\n\\n
\\n\\t
IntechOpen turns 10, with more than 30 million downloads to date.
\\n\\t
IntechOpen appoints its first Regional Representatives - members of the team situated around the world dedicated to increasing the visibility of our authors’ published work within their local scientific communities.
\\n
\\n\\n
2015
\\n\\n
\\n\\t
Downloads milestone: More than 70 million downloads reached, more than doubling since the previous year.
\\n\\t
Publishing milestone: IntechOpen publishes its 2,500th book and 40,000th Open Access chapter, reaching 20,000 citations in Thomson Reuters ISI Web of Science.
\\n\\t
40 IntechOpen authors are included in the top one per cent of the world’s most-cited researchers.
\\n\\t
Thomson Reuters’ ISI Web of Science Book Citation Index begins indexing IntechOpen’s books in its database.
\\n
\\n\\n
2016
\\n\\n
\\n\\t
IntechOpen is identified as a world leader in Simba Information’s Open Access Book Publishing 2016-2020 report and forecast. IntechOpen came in as the world’s largest Open Access book publisher by title count.
\\n
\\n\\n
2017
\\n\\n
\\n\\t
Downloads milestone: IntechOpen reaches more than 100 million downloads
\\n\\t
Publishing milestone: IntechOpen publishes its 3,000th Open Access book, making it the largest Open Access book collection in the world
We started by publishing journals and books from the fields of science we were most familiar with - AI, robotics, manufacturing and operations research. Through our growing network of institutions and authors, we soon expanded into related fields like environmental engineering, nanotechnology, computer science, renewable energy and electrical engineering, Today, we are the world’s largest Open Access publisher of scientific research, with over 4,200 books and 54,000 scientific works including peer-reviewed content from more than 116,000 scientists spanning 161 countries. Our authors range from globally-renowned Nobel Prize winners to up-and-coming researchers at the cutting edge of scientific discovery.
\n\n
In the same year that IntechOpen was founded, we launched what was at the time the first ever Open Access, peer-reviewed journal in its field: the International Journal of Advanced Robotic Systems (IJARS).
\n\n
The IntechOpen timeline
\n\n
2004
\n\n
\n\t
Intech Open is founded in Vienna, Austria, by Alex Lazinica and Vedran Kordic, two PhD students, and their first Open Access journals and books are published.
\n\t
Alex and Vedran launch the first Open Access, peer-reviewed robotics journal and IntechOpen’s flagship publication, the International Journal of Advanced Robotic Systems (IJARS).
\n
\n\n
2005
\n\n
\n\t
IntechOpen publishes its first Open Access book: Cutting Edge Robotics.
\n
\n\n
2006
\n\n
\n\t
IntechOpen publishes a special issue of IJARS, featuring contributions from NASA scientists regarding the Mars Exploration Rover missions.
\n
\n\n
2008
\n\n
\n\t
Downloads milestone: 200,000 downloads reached
\n
\n\n
2009
\n\n
\n\t
Publishing milestone: the first 100 Open Access STM books are published
\n
\n\n
2010
\n\n
\n\t
Downloads milestone: one million downloads reached
\n\t
IntechOpen expands its book publishing into a new field: medicine.
\n
\n\n
2011
\n\n
\n\t
Publishing milestone: More than five million downloads reached
\n\t
IntechOpen publishes 1996 Nobel Prize in Chemistry winner Harold W. Kroto’s “Strategies to Successfully Cross-Link Carbon Nanotubes”. Find it here.
\n\t
IntechOpen and TBI collaborate on a project to explore the changing needs of researchers and the evolving ways that they discover, publish and exchange information. The result is the survey “Author Attitudes Towards Open Access Publishing: A Market Research Program”.
\n\t
IntechOpen hosts SHOW - Share Open Access Worldwide; a series of lectures, debates, round-tables and events to bring people together in discussion of open source principles, intellectual property, content licensing innovations, remixed and shared culture and free knowledge.
\n
\n\n
2012
\n\n
\n\t
Publishing milestone: 10 million downloads reached
\n\t
IntechOpen holds Interact2012, a free series of workshops held by figureheads of the scientific community including Professor Hiroshi Ishiguro, director of the Intelligent Robotics Laboratory, who took the audience through some of the most impressive human-robot interactions observed in his lab.
\n
\n\n
2013
\n\n
\n\t
IntechOpen joins the Committee on Publication Ethics (COPE) as part of a commitment to guaranteeing the highest standards of publishing.
\n
\n\n
2014
\n\n
\n\t
IntechOpen turns 10, with more than 30 million downloads to date.
\n\t
IntechOpen appoints its first Regional Representatives - members of the team situated around the world dedicated to increasing the visibility of our authors’ published work within their local scientific communities.
\n
\n\n
2015
\n\n
\n\t
Downloads milestone: More than 70 million downloads reached, more than doubling since the previous year.
\n\t
Publishing milestone: IntechOpen publishes its 2,500th book and 40,000th Open Access chapter, reaching 20,000 citations in Thomson Reuters ISI Web of Science.
\n\t
40 IntechOpen authors are included in the top one per cent of the world’s most-cited researchers.
\n\t
Thomson Reuters’ ISI Web of Science Book Citation Index begins indexing IntechOpen’s books in its database.
\n
\n\n
2016
\n\n
\n\t
IntechOpen is identified as a world leader in Simba Information’s Open Access Book Publishing 2016-2020 report and forecast. IntechOpen came in as the world’s largest Open Access book publisher by title count.
\n
\n\n
2017
\n\n
\n\t
Downloads milestone: IntechOpen reaches more than 100 million downloads
\n\t
Publishing milestone: IntechOpen publishes its 3,000th Open Access book, making it the largest Open Access book collection in the world
\n
\n"}]},successStories:{items:[]},authorsAndEditors:{filterParams:{},profiles:[{id:"396",title:"Dr.",name:"Vedran",middleName:null,surname:"Kordic",slug:"vedran-kordic",fullName:"Vedran Kordic",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/396/images/7281_n.png",biography:"After obtaining his Master's degree in Mechanical Engineering he continued his education at the Vienna University of Technology where he obtained his PhD degree in 2004. He worked as a researcher at the Automation and Control Institute, Faculty of Electrical Engineering, Vienna University of Technology until 2008. His studies in robotics lead him not only to a PhD degree but also inspired him to co-found and build the International Journal of Advanced Robotic Systems - world's first Open Access journal in the field of robotics.",institutionString:null,institution:{name:"TU Wien",country:{name:"Austria"}}},{id:"441",title:"Ph.D.",name:"Jaekyu",middleName:null,surname:"Park",slug:"jaekyu-park",fullName:"Jaekyu Park",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/441/images/1881_n.jpg",biography:null,institutionString:null,institution:{name:"LG Corporation (South Korea)",country:{name:"Korea, South"}}},{id:"465",title:"Dr",name:"Christian",middleName:null,surname:"Martens",slug:"christian-martens",fullName:"Christian Martens",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:null},{id:"479",title:"Dr.",name:"Valentina",middleName:null,surname:"Colla",slug:"valentina-colla",fullName:"Valentina Colla",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/479/images/358_n.jpg",biography:null,institutionString:null,institution:{name:"Sant'Anna School of Advanced Studies",country:{name:"Italy"}}},{id:"494",title:"PhD",name:"Loris",middleName:null,surname:"Nanni",slug:"loris-nanni",fullName:"Loris Nanni",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/494/images/system/494.jpg",biography:"Loris Nanni received his Master Degree cum laude on June-2002 from the University of Bologna, and the April 26th 2006 he received his Ph.D. in Computer Engineering at DEIS, University of Bologna. On September, 29th 2006 he has won a post PhD fellowship from the university of Bologna (from October 2006 to October 2008), at the competitive examination he was ranked first in the industrial engineering area. He extensively served as referee for several international journals. He is author/coauthor of more than 100 research papers. He has been involved in some projects supported by MURST and European Community. His research interests include pattern recognition, bioinformatics, and biometric systems (fingerprint classification and recognition, signature verification, face recognition).",institutionString:null,institution:null},{id:"496",title:"Dr.",name:"Carlos",middleName:null,surname:"Leon",slug:"carlos-leon",fullName:"Carlos Leon",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Seville",country:{name:"Spain"}}},{id:"512",title:"Dr.",name:"Dayang",middleName:null,surname:"Jawawi",slug:"dayang-jawawi",fullName:"Dayang Jawawi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Technology Malaysia",country:{name:"Malaysia"}}},{id:"528",title:"Dr.",name:"Kresimir",middleName:null,surname:"Delac",slug:"kresimir-delac",fullName:"Kresimir Delac",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/528/images/system/528.jpg",biography:"K. Delac received his B.Sc.E.E. degree in 2003 and is currentlypursuing a Ph.D. degree at the University of Zagreb, Faculty of Electrical Engineering andComputing. His current research interests are digital image analysis, pattern recognition andbiometrics.",institutionString:null,institution:{name:"University of Zagreb",country:{name:"Croatia"}}},{id:"557",title:"Dr.",name:"Andon",middleName:"Venelinov",surname:"Topalov",slug:"andon-topalov",fullName:"Andon Topalov",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/557/images/1927_n.jpg",biography:"Dr. Andon V. Topalov received the MSc degree in Control Engineering from the Faculty of Information Systems, Technologies, and Automation at Moscow State University of Civil Engineering (MGGU) in 1979. He then received his PhD degree in Control Engineering from the Department of Automation and Remote Control at Moscow State Mining University (MGSU), Moscow, in 1984. From 1985 to 1986, he was a Research Fellow in the Research Institute for Electronic Equipment, ZZU AD, Plovdiv, Bulgaria. In 1986, he joined the Department of Control Systems, Technical University of Sofia at the Plovdiv campus, where he is presently a Full Professor. He has held long-term visiting Professor/Scholar positions at various institutions in South Korea, Turkey, Mexico, Greece, Belgium, UK, and Germany. And he has coauthored one book and authored or coauthored more than 80 research papers in conference proceedings and journals. 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Shohel"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}]},subject:{topic:{id:"955",title:"Biotechnology",slug:"semiconductor-biotechnology",parent:{id:"159",title:"Semiconductor",slug:"semiconductor"},numberOfBooks:1,numberOfSeries:0,numberOfAuthorsAndEditors:73,numberOfWosCitations:144,numberOfCrossrefCitations:75,numberOfDimensionsCitations:158,videoUrl:null,fallbackUrl:null,description:null},booksByTopicFilter:{topicId:"955",sort:"-publishedDate",limit:12,offset:0},booksByTopicCollection:[{type:"book",id:"5541",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",subtitle:null,isOpenForSubmission:!1,hash:"076a9d5440634eb52d02bd45a8ce7cfd",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",bookSignature:"Nikolay N. Nikitenkov",coverURL:"https://cdn.intechopen.com/books/images_new/5541.jpg",editedByType:"Edited by",editors:[{id:"16402",title:"Prof.",name:"Nikolay",middleName:"N.",surname:"Nikitenkov",slug:"nikolay-nikitenkov",fullName:"Nikolay Nikitenkov"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}],booksByTopicTotal:1,seriesByTopicCollection:[],seriesByTopicTotal:0,mostCitedChapters:[{id:"52684",doi:"10.5772/65702",title:"Advance Deposition Techniques for Thin Film and Coating",slug:"advance-deposition-techniques-for-thin-film-and-coating",totalDownloads:7563,totalCrossrefCites:31,totalDimensionsCites:58,abstract:"Thin films have a great impact on the modern era of technology. Thin films are considered as backbone for advanced applications in the various fields such as optical devices, environmental applications, telecommunications devices, energy storage devices, and so on . The crucial issue for all applications of thin films depends on their morphology and the stability. The morphology of the thin films strongly hinges on deposition techniques. Thin films can be deposited by the physical and chemical routes. In this chapter, we discuss some advance techniques and principles of thin-film depositions. The vacuum thermal evaporation technique, electron beam evaporation, pulsed-layer deposition, direct current/radio frequency magnetron sputtering, and chemical route deposition systems will be discussed in detail.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Asim Jilani, Mohamed Shaaban Abdel-wahab and Ahmed Hosny\nHammad",authors:[{id:"192377",title:"Dr.",name:"Asim",middleName:null,surname:"Jilani",slug:"asim-jilani",fullName:"Asim Jilani"},{id:"192972",title:"Dr.",name:"M.Sh",middleName:null,surname:"Abdel-Wahab",slug:"m.sh-abdel-wahab",fullName:"M.Sh Abdel-Wahab"},{id:"192973",title:"Dr.",name:"Ahmed",middleName:"H",surname:"Hammad",slug:"ahmed-hammad",fullName:"Ahmed Hammad"}]},{id:"53225",doi:"10.5772/66396",title:"Radio Frequency Magnetron Sputter Deposition as a Tool for Surface Modification of Medical Implants",slug:"radio-frequency-magnetron-sputter-deposition-as-a-tool-for-surface-modification-of-medical-implants",totalDownloads:2252,totalCrossrefCites:8,totalDimensionsCites:28,abstract:"The resent advances in radio frequency (RF)‐magnetron sputtering of hydroxyapatite films are reviewed and challenges posed. The principles underlying RF‐magnetron sputtering used to prepare calcium phosphate‐based, mainly hydroxyapatite coatings, are discussed in this chapter. The fundamental characteristic of the RF‐magnetron sputtering is an energy input into the growing film. In order to tailor the film properties, one has to adjust the energy input into the substrate depending on the desired film properties. The effect of different deposition control parameters, such as deposition time, substrate temperature, and substrate biasing on the hydroxyapatite (HA) film properties is discussed.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Roman Surmenev, Alina Vladescu, Maria Surmeneva, Anna Ivanova,\nMariana Braic, Irina Grubova and Cosmin Mihai Cotrut",authors:[{id:"193921",title:"Dr.",name:"Alina",middleName:null,surname:"Vladescu",slug:"alina-vladescu",fullName:"Alina Vladescu"},{id:"193922",title:"Prof.",name:"Roman",middleName:null,surname:"Surmenev",slug:"roman-surmenev",fullName:"Roman Surmenev"},{id:"193923",title:"Dr.",name:"Maria",middleName:null,surname:"Surmeneva",slug:"maria-surmeneva",fullName:"Maria Surmeneva"},{id:"193948",title:"Dr.",name:"Mariana",middleName:null,surname:"Braic",slug:"mariana-braic",fullName:"Mariana Braic"},{id:"194047",title:"Ms.",name:"Anna",middleName:null,surname:"Ivanova",slug:"anna-ivanova",fullName:"Anna Ivanova"},{id:"194048",title:"BSc.",name:"Irina",middleName:null,surname:"Grubova",slug:"irina-grubova",fullName:"Irina Grubova"},{id:"196398",title:"Prof.",name:"Cosmin Mihai",middleName:null,surname:"Cotrut",slug:"cosmin-mihai-cotrut",fullName:"Cosmin Mihai Cotrut"}]},{id:"53792",doi:"10.5772/67085",title:"Silver-Based Low-Emissivity Coating Technology for Energy- Saving Window Applications",slug:"silver-based-low-emissivity-coating-technology-for-energy-saving-window-applications",totalDownloads:3132,totalCrossrefCites:7,totalDimensionsCites:13,abstract:"Low-emissivity (low-E) technology is a unique and cost-effective solution to save energy in buildings for different climates. Its development combines advances in materials science, vacuum deposition, and optical design. In this chapter, we will review the fundamentals of energy saving window coatings, the history of its application, and the materials used. The current low-E coating technologies are overviewed, especially silver-based low-E technologies, which comprise more than 90% of the overall low-E market today. Further, the advanced understanding of generating high-quality silver thin films is discussed, which is at the heart of silver-based low-E product technology development. How the silver thin film electrical, optical, and emissivity properties are influenced by their microstructure, thickness, and by the materials on neighboring layers will be discussed from a theoretical and an experimental perspective.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Guowen Ding and César Clavero",authors:[{id:"195240",title:"Dr.",name:"Guowen",middleName:null,surname:"Ding",slug:"guowen-ding",fullName:"Guowen Ding"},{id:"197064",title:"Dr.",name:"Cesar",middleName:null,surname:"Clavero",slug:"cesar-clavero",fullName:"Cesar Clavero"}]},{id:"52951",doi:"10.5772/66125",title:"Chemical Solution Deposition Technique of Thin-Film Ceramic Electrolytes for Solid Oxide Fuel Cells",slug:"chemical-solution-deposition-technique-of-thin-film-ceramic-electrolytes-for-solid-oxide-fuel-cells",totalDownloads:2392,totalCrossrefCites:7,totalDimensionsCites:10,abstract:"Chemical solution deposition (CSD) technique is recently gaining momentum for the fabrication of electrolyte materials for solid oxide fuel cells (SOFCs) due to its cost-effectiveness, high yield, and simplicity of the process requirements. The advanced vacuum deposition techniques such as sputtering, atomic layer deposition (ALD), pulsed laser deposition (PLD), metallo-organic chemical vapor deposition (MOCVD) are lacking in scalability and cost-effectiveness. CSD technique includes a variety of approaches such as sol-gel process, chelate process, and metallo-organic decomposition. The present chapter discusses briefly about the evolution of CSD method and its subsequent entry to the field of SOFCs, various solution methods associated with different chemical compositions, film deposition techniques, chemical reactions, heat treatment strategies, nucleation and growth kinetics, associated defects, etc. Examples are cited to bring out the history dating back to the discovery of amorphous zirconia film through the successful fabrication of the crystalline fluorite-type films such as yttria-stabilized zirconia (YSZ), scandia-doped ceria (SDC), and crystalline perovskite-type films such as yttria-doped barium zirconate (BZY) and yttria-doped barium cerate (BCY), to name a few.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Mridula Biswas and Pei-Chen Su",authors:[{id:"193015",title:"Dr.",name:"Pei-Chen",middleName:null,surname:"Su",slug:"pei-chen-su",fullName:"Pei-Chen Su"},{id:"193328",title:"Dr.",name:"Mridula",middleName:null,surname:"Biswas",slug:"mridula-biswas",fullName:"Mridula Biswas"}]},{id:"53336",doi:"10.5772/66476",title:"Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films",slug:"molecular-precursor-method-for-fabricating-p-type-cu2o-and-metallic-cu-thin-films",totalDownloads:2360,totalCrossrefCites:5,totalDimensionsCites:10,abstract:"Functional thin films are used in various fields of our life. Many different methods are used to fabricate these films including physical vapor deposition (PVD) and chemical processes. The chemical processes can be used to manufacture thin films in a relatively cheap way, as compared to PVD methods. This chapter summarizes the procedures of the molecular precursor method (MPM), a chemical process, for fabrication of both metal oxide semiconductor Cu2O and metallic Cu thin films by utilizing Cu(II) complexes in coating solutions. The MPM, recently developed and reported by the present authors, represents a facile procedure for thin film fabrication of various metal oxides or phosphates. This method pertinent to the coordination chemistry and materials science including nanoscience and nanotechnology has provided various thin films of high quality. The MPM is based on the design of metal complexes in coating solutions with excellent stability, homogeneity, miscibility, coatability, etc., which are practical advantages. The metal oxides and phosphates are useful as the electron and/or ion conductors, semiconductors, dielectric materials, etc. This chapter will describe the principle and recent achievement, mainly on fabricating the p-type Cu2O and metallic Cu thin films of the MPM.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Hiroki Nagai and Mitsunobu Sato",authors:[{id:"148259",title:"Prof.",name:"Mitsunobu",middleName:null,surname:"Sato",slug:"mitsunobu-sato",fullName:"Mitsunobu Sato"},{id:"148920",title:"Dr.",name:"Hiroki",middleName:null,surname:"Nagai",slug:"hiroki-nagai",fullName:"Hiroki Nagai"}]}],mostDownloadedChaptersLast30Days:[{id:"52684",title:"Advance Deposition Techniques for Thin Film and Coating",slug:"advance-deposition-techniques-for-thin-film-and-coating",totalDownloads:7563,totalCrossrefCites:31,totalDimensionsCites:58,abstract:"Thin films have a great impact on the modern era of technology. Thin films are considered as backbone for advanced applications in the various fields such as optical devices, environmental applications, telecommunications devices, energy storage devices, and so on . The crucial issue for all applications of thin films depends on their morphology and the stability. The morphology of the thin films strongly hinges on deposition techniques. Thin films can be deposited by the physical and chemical routes. In this chapter, we discuss some advance techniques and principles of thin-film depositions. The vacuum thermal evaporation technique, electron beam evaporation, pulsed-layer deposition, direct current/radio frequency magnetron sputtering, and chemical route deposition systems will be discussed in detail.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Asim Jilani, Mohamed Shaaban Abdel-wahab and Ahmed Hosny\nHammad",authors:[{id:"192377",title:"Dr.",name:"Asim",middleName:null,surname:"Jilani",slug:"asim-jilani",fullName:"Asim Jilani"},{id:"192972",title:"Dr.",name:"M.Sh",middleName:null,surname:"Abdel-Wahab",slug:"m.sh-abdel-wahab",fullName:"M.Sh Abdel-Wahab"},{id:"192973",title:"Dr.",name:"Ahmed",middleName:"H",surname:"Hammad",slug:"ahmed-hammad",fullName:"Ahmed Hammad"}]},{id:"53792",title:"Silver-Based Low-Emissivity Coating Technology for Energy- Saving Window Applications",slug:"silver-based-low-emissivity-coating-technology-for-energy-saving-window-applications",totalDownloads:3132,totalCrossrefCites:7,totalDimensionsCites:13,abstract:"Low-emissivity (low-E) technology is a unique and cost-effective solution to save energy in buildings for different climates. Its development combines advances in materials science, vacuum deposition, and optical design. In this chapter, we will review the fundamentals of energy saving window coatings, the history of its application, and the materials used. The current low-E coating technologies are overviewed, especially silver-based low-E technologies, which comprise more than 90% of the overall low-E market today. Further, the advanced understanding of generating high-quality silver thin films is discussed, which is at the heart of silver-based low-E product technology development. How the silver thin film electrical, optical, and emissivity properties are influenced by their microstructure, thickness, and by the materials on neighboring layers will be discussed from a theoretical and an experimental perspective.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Guowen Ding and César Clavero",authors:[{id:"195240",title:"Dr.",name:"Guowen",middleName:null,surname:"Ding",slug:"guowen-ding",fullName:"Guowen Ding"},{id:"197064",title:"Dr.",name:"Cesar",middleName:null,surname:"Clavero",slug:"cesar-clavero",fullName:"Cesar Clavero"}]},{id:"52908",title:"Smart Thermoresponsive Surfaces Based on pNIPAm Coatings and Laser Method for Biological Applications",slug:"smart-thermoresponsive-surfaces-based-on-pnipam-coatings-and-laser-method-for-biological-application",totalDownloads:1836,totalCrossrefCites:3,totalDimensionsCites:7,abstract:"Various applications within last decades such as bacterially resistant surfaces, soft robotics, drug delivery systems, sensors and tissue engineering are poised to feature the importance of the ability to control bio-interfacial interactions. An enhanced attention is dedicated to designing smart stimuli-responsive interfaces for DNA, drug delivery, protein and cell based applications. Within this context, the thermoresponsive materials, especially poly(N-isopropylacrylamide) (pNIPAm) have been intensively used in tissue engineering applications for a controlled detachment of proteins and cells with a minimum of invasive effect on protein and cell structural conformation. The properties of smart bio-interfaces can be controlled by its composition and polymer architecture. Therefore, appropriate methods for obtaining controlled coatings are necessary. Laser methods were successfully used in the last decades for obtaining controlled organic and inorganic coatings for various types of applications, from electronics to tissue engineering. Among these, Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique bring us a step forward to other laser methods by avoiding damage and photochemical decomposition of materials. In this chapter we describe materials and approaches used for design of smart bio-interfaces aimed at controlling protein and cells behavior in vitro, focusing MAPLE method for tuning coatings characteristics in relation with biological response.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Laurentiu Rusen, Valentina Dinca, Cosmin Mustaciosu, Madalina\nIcriverzi, Livia Elena Sima, Anca Bonciu, Simona Brajnicov, Natalia\nMihailescu, Nicoleta Dumitrescu, Alexandru I. Popovici, Anca\nRoseanu and Maria Dinescu",authors:[{id:"32241",title:"Dr.",name:"Maria",middleName:null,surname:"Dinescu",slug:"maria-dinescu",fullName:"Maria Dinescu"},{id:"176781",title:"Dr.",name:"Valentina",middleName:null,surname:"Dinca",slug:"valentina-dinca",fullName:"Valentina Dinca"},{id:"176783",title:"Dr.",name:"Laurentiu",middleName:null,surname:"Rusen",slug:"laurentiu-rusen",fullName:"Laurentiu Rusen"},{id:"177680",title:"B.Sc.",name:"Anca",middleName:"Florina",surname:"Bonciu",slug:"anca-bonciu",fullName:"Anca Bonciu"},{id:"193439",title:"Ph.D.",name:"Madalina",middleName:null,surname:"Icriverzi",slug:"madalina-icriverzi",fullName:"Madalina Icriverzi"},{id:"193441",title:"Dr.",name:"Livia Elena",middleName:null,surname:"Sima",slug:"livia-elena-sima",fullName:"Livia Elena Sima"},{id:"193442",title:"Ph.D.",name:"Simona",middleName:null,surname:"Brajnicov",slug:"simona-brajnicov",fullName:"Simona Brajnicov"},{id:"193443",title:"Ph.D.",name:"Nicoleta",middleName:"Luminita",surname:"Dumitrescu",slug:"nicoleta-dumitrescu",fullName:"Nicoleta Dumitrescu"},{id:"193444",title:"Dr.",name:"Cosmin",middleName:null,surname:"Mustaciosu",slug:"cosmin-mustaciosu",fullName:"Cosmin Mustaciosu"},{id:"193445",title:"Dr.",name:"Anca",middleName:null,surname:"Roseanu",slug:"anca-roseanu",fullName:"Anca Roseanu"},{id:"196184",title:"Prof.",name:"Natalia",middleName:null,surname:"Serban",slug:"natalia-serban",fullName:"Natalia Serban"},{id:"198275",title:"Ms.",name:"A.I.",middleName:null,surname:"Popovici",slug:"a.i.-popovici",fullName:"A.I. Popovici"}]},{id:"52951",title:"Chemical Solution Deposition Technique of Thin-Film Ceramic Electrolytes for Solid Oxide Fuel Cells",slug:"chemical-solution-deposition-technique-of-thin-film-ceramic-electrolytes-for-solid-oxide-fuel-cells",totalDownloads:2392,totalCrossrefCites:7,totalDimensionsCites:10,abstract:"Chemical solution deposition (CSD) technique is recently gaining momentum for the fabrication of electrolyte materials for solid oxide fuel cells (SOFCs) due to its cost-effectiveness, high yield, and simplicity of the process requirements. The advanced vacuum deposition techniques such as sputtering, atomic layer deposition (ALD), pulsed laser deposition (PLD), metallo-organic chemical vapor deposition (MOCVD) are lacking in scalability and cost-effectiveness. CSD technique includes a variety of approaches such as sol-gel process, chelate process, and metallo-organic decomposition. The present chapter discusses briefly about the evolution of CSD method and its subsequent entry to the field of SOFCs, various solution methods associated with different chemical compositions, film deposition techniques, chemical reactions, heat treatment strategies, nucleation and growth kinetics, associated defects, etc. Examples are cited to bring out the history dating back to the discovery of amorphous zirconia film through the successful fabrication of the crystalline fluorite-type films such as yttria-stabilized zirconia (YSZ), scandia-doped ceria (SDC), and crystalline perovskite-type films such as yttria-doped barium zirconate (BZY) and yttria-doped barium cerate (BCY), to name a few.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Mridula Biswas and Pei-Chen Su",authors:[{id:"193015",title:"Dr.",name:"Pei-Chen",middleName:null,surname:"Su",slug:"pei-chen-su",fullName:"Pei-Chen Su"},{id:"193328",title:"Dr.",name:"Mridula",middleName:null,surname:"Biswas",slug:"mridula-biswas",fullName:"Mridula Biswas"}]},{id:"53122",title:"Anomalous Rashba Effect of Bi Thin Film Studied by Spin-Resolved ARPES",slug:"anomalous-rashba-effect-of-bi-thin-film-studied-by-spin-resolved-arpes",totalDownloads:2099,totalCrossrefCites:1,totalDimensionsCites:1,abstract:"The Rashba effect is a momentum‐dependent splitting of spin bands in two‐dimensional systems such as surface, interface and heterostructure. The effect is caused by broken space‐inversion symmetry and spin‐orbit coupling and allows to manipulate and generate the spin by the electric fields, that is, without the magnetic field. It means that the devices applied to the Rashba effect have many advantages. Bismuth is known as a promising candidate to investigate the surface Rashba effect, and the spin structure of Bi surface has also been intensively discussed. However, it is unclear to what extent the so far believed simple vortical spin structure is adequate. To understand the surface properties of the Rashba system is particularly important when utilizing the Rashba effect to the spintronic devices, since it is desirable to control the spin polarization when developing new types of devices. In this chapter, we report that the surface spin states of the Bi thin film exhibit unusual characteristics unlike the conventional Rashba splitting by using a spin‐ and angle‐resolved photoemission spectroscopy measurement.",book:{id:"5541",slug:"modern-technologies-for-creating-the-thin-film-systems-and-coatings",title:"Modern Technologies for Creating the Thin-film Systems and Coatings",fullTitle:"Modern Technologies for Creating the Thin-film Systems and Coatings"},signatures:"Akari Takayama",authors:[{id:"192655",title:"Dr.",name:"Akari",middleName:null,surname:"Takayama",slug:"akari-takayama",fullName:"Akari Takayama"}]}],onlineFirstChaptersFilter:{topicId:"955",limit:6,offset:0},onlineFirstChaptersCollection:[],onlineFirstChaptersTotal:0},preDownload:{success:null,errors:{}},subscriptionForm:{success:null,errors:{}},aboutIntechopen:{},privacyPolicy:{},peerReviewing:{},howOpenAccessPublishingWithIntechopenWorks:{},sponsorshipBooks:{sponsorshipBooks:[],offset:0,limit:8,total:null},allSeries:{pteSeriesList:[{id:"14",title:"Artificial Intelligence",numberOfPublishedBooks:9,numberOfPublishedChapters:87,numberOfOpenTopics:6,numberOfUpcomingTopics:0,issn:"2633-1403",doi:"10.5772/intechopen.79920",isOpenForSubmission:!0},{id:"7",title:"Biomedical Engineering",numberOfPublishedBooks:12,numberOfPublishedChapters:98,numberOfOpenTopics:3,numberOfUpcomingTopics:0,issn:"2631-5343",doi:"10.5772/intechopen.71985",isOpenForSubmission:!0}],lsSeriesList:[{id:"11",title:"Biochemistry",numberOfPublishedBooks:27,numberOfPublishedChapters:288,numberOfOpenTopics:4,numberOfUpcomingTopics:0,issn:"2632-0983",doi:"10.5772/intechopen.72877",isOpenForSubmission:!0},{id:"25",title:"Environmental Sciences",numberOfPublishedBooks:1,numberOfPublishedChapters:9,numberOfOpenTopics:4,numberOfUpcomingTopics:0,issn:"2754-6713",doi:"10.5772/intechopen.100362",isOpenForSubmission:!0},{id:"10",title:"Physiology",numberOfPublishedBooks:11,numberOfPublishedChapters:139,numberOfOpenTopics:4,numberOfUpcomingTopics:0,issn:"2631-8261",doi:"10.5772/intechopen.72796",isOpenForSubmission:!0}],hsSeriesList:[{id:"3",title:"Dentistry",numberOfPublishedBooks:8,numberOfPublishedChapters:129,numberOfOpenTopics:0,numberOfUpcomingTopics:2,issn:"2631-6218",doi:"10.5772/intechopen.71199",isOpenForSubmission:!1},{id:"6",title:"Infectious Diseases",numberOfPublishedBooks:13,numberOfPublishedChapters:107,numberOfOpenTopics:3,numberOfUpcomingTopics:1,issn:"2631-6188",doi:"10.5772/intechopen.71852",isOpenForSubmission:!0},{id:"13",title:"Veterinary Medicine and Science",numberOfPublishedBooks:10,numberOfPublishedChapters:103,numberOfOpenTopics:3,numberOfUpcomingTopics:0,issn:"2632-0517",doi:"10.5772/intechopen.73681",isOpenForSubmission:!0}],sshSeriesList:[{id:"22",title:"Business, Management and Economics",numberOfPublishedBooks:1,numberOfPublishedChapters:12,numberOfOpenTopics:2,numberOfUpcomingTopics:1,issn:"2753-894X",doi:"10.5772/intechopen.100359",isOpenForSubmission:!0},{id:"23",title:"Education and Human Development",numberOfPublishedBooks:0,numberOfPublishedChapters:0,numberOfOpenTopics:2,numberOfUpcomingTopics:0,issn:null,doi:"10.5772/intechopen.100360",isOpenForSubmission:!1},{id:"24",title:"Sustainable Development",numberOfPublishedBooks:0,numberOfPublishedChapters:11,numberOfOpenTopics:4,numberOfUpcomingTopics:1,issn:null,doi:"10.5772/intechopen.100361",isOpenForSubmission:!0}],testimonialsList:[{id:"13",text:"The collaboration with and support of the technical staff of IntechOpen is fantastic. 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He has 19 publications in indexed international journals (ISIS), as well as over 60 publications and oral presentations in both Portuguese and international journals and congresses.",institutionString:"University of Trás-os-Montes and Alto Douro",institution:{name:"University of Trás-os-Montes and Alto Douro",country:{name:"Portugal"}}},{id:"38652",title:"Prof.",name:"Rita",middleName:null,surname:"Payan-Carreira",slug:"rita-payan-carreira",fullName:"Rita Payan-Carreira",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRiFPQA0/Profile_Picture_1614601496313",biography:"Rita Payan Carreira earned her Veterinary Degree from the Faculty of Veterinary Medicine in Lisbon, Portugal, in 1985. She obtained her Ph.D. in Veterinary Sciences from the University of Trás-os-Montes e Alto Douro, Portugal. After almost 32 years of teaching at the University of Trás-os-Montes and Alto Douro, she recently moved to the University of Évora, Department of Veterinary Medicine, where she teaches in the field of Animal Reproduction and Clinics. Her primary research areas include the molecular markers of the endometrial cycle and the embryo–maternal interaction, including oxidative stress and the reproductive physiology and disorders of sexual development, besides the molecular determinants of male and female fertility. She often supervises students preparing their master's or doctoral theses. She is also a frequent referee for various journals.",institutionString:null,institution:{name:"University of Évora",country:{name:"Portugal"}}},{id:"283019",title:"Dr.",name:"Oudessa",middleName:null,surname:"Kerro Dego",slug:"oudessa-kerro-dego",fullName:"Oudessa Kerro Dego",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/283019/images/system/283019.png",biography:"Dr. Kerro Dego is a veterinary microbiologist with training in veterinary medicine, microbiology, and anatomic pathology. Dr. Kerro Dego is an assistant professor of dairy health in the department of animal science, the University of Tennessee, Institute of Agriculture, Knoxville, Tennessee. He received his D.V.M. (1997), M.S. (2002), and Ph.D. (2008) degrees in Veterinary Medicine, Animal Pathology and Veterinary Microbiology from College of Veterinary Medicine, Addis Ababa University, Ethiopia; College of Veterinary Medicine, Utrecht University, the Netherlands and Western College of Veterinary Medicine, University of Saskatchewan, Canada respectively. He did his Postdoctoral training in microbial pathogenesis (2009 - 2015) in the Department of Animal Science, the University of Tennessee, Institute of Agriculture, Knoxville, Tennessee. Dr. Kerro Dego’s research focuses on the prevention and control of infectious diseases of farm animals, particularly mastitis, improving dairy food safety, and mitigation of antimicrobial resistance. Dr. Kerro Dego has extensive experience in studying the pathogenesis of bacterial infections, identification of virulence factors, and vaccine development and efficacy testing against major bacterial mastitis pathogens. Dr. Kerro Dego conducted numerous controlled experimental and field vaccine efficacy studies, vaccination, and evaluation of immunological responses in several species of animals, including rodents (mice) and large animals (bovine and ovine).",institutionString:"University of Tennessee at Knoxville",institution:{name:"University of Tennessee at Knoxville",country:{name:"United States of America"}}},{id:"251314",title:"Dr.",name:"Juan Carlos",middleName:null,surname:"Gardón",slug:"juan-carlos-gardon",fullName:"Juan Carlos Gardón",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/251314/images/system/251314.jpeg",biography:"Juan Carlos Gardón Poggi received University degree from the Faculty of Agrarian Science in Argentina, in 1983. Also he received Masters Degree and PhD from Córdoba University, Spain. He is currently a Professor at the Catholic University of Valencia San Vicente Mártir, at the Department of Medicine and Animal Surgery. He teaches diverse courses in the field of Animal Reproduction and he is the Director of the Veterinary Farm. He also participates in academic postgraduate activities at the Veterinary Faculty of Murcia University, Spain. His research areas include animal physiology, physiology and biotechnology of reproduction either in males or females, the study of gametes under in vitro conditions and the use of ultrasound as a complement to physiological studies and development of applied biotechnologies. Routinely, he supervises students preparing their doctoral, master thesis or final degree projects.",institutionString:"Catholic University of Valencia San Vicente Mártir, Spain",institution:null},{id:"125292",title:"Dr.",name:"Katy",middleName:null,surname:"Satué Ambrojo",slug:"katy-satue-ambrojo",fullName:"Katy Satué Ambrojo",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/125292/images/system/125292.jpeg",biography:"Katy Satué Ambrojo received her Veterinary Medicine degree, Master degree in Equine Technology and doctorate in Veterinary Medicine from the Faculty of Veterinary, CEU-Cardenal Herrera University in Valencia, Spain. She is a Full Professor at the Department of Medicine and Animal Surgery at the same University. She developed her research activity in the field of Endocrinology, Hematology, Biochemistry and Immunology of horses. She is a scientific reviewer of several international journals : American Journal of Obstetrics and Gynecology, Comparative Clinical Pathology, Veterinary Clinical Pathology, Journal of Equine Veterinary Science, Reproduction in Domestic Animals, Research Veterinary Science, Brazilian Journal of Medical and Biological Research, Livestock Production Science and Theriogenology. Since 2014, she has been the Head of the Clinical Analysis Laboratory of the Hospital Clínico Veterinario from the Faculty of Veterinary, CEU-Cardenal Herrera University.",institutionString:"CEU-Cardenal Herrera University",institution:{name:"CEU Cardinal Herrera University",country:{name:"Spain"}}},{id:"309529",title:"Dr.",name:"Albert",middleName:null,surname:"Rizvanov",slug:"albert-rizvanov",fullName:"Albert Rizvanov",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/309529/images/9189_n.jpg",biography:'Albert A. Rizvanov is a Professor and Director of the Center for Precision and Regenerative Medicine at the Institute of Fundamental Medicine and Biology, Kazan Federal University (KFU), Russia. He is the Head of the Center of Excellence “Regenerative Medicine” and Vice-Director of Strategic Academic Unit \\"Translational 7P Medicine\\". Albert completed his Ph.D. at the University of Nevada, Reno, USA and Dr.Sci. at KFU. He is a corresponding member of the Tatarstan Academy of Sciences, Russian Federation. Albert is an author of more than 300 peer-reviewed journal articles and 22 patents. He has supervised 11 Ph.D. and 2 Dr.Sci. dissertations. Albert is the Head of the Dissertation Committee on Biochemistry, Microbiology, and Genetics at KFU.\nORCID https://orcid.org/0000-0002-9427-5739\nWebsite https://kpfu.ru/Albert.Rizvanov?p_lang=2',institutionString:"Kazan Federal University",institution:{name:"Kazan Federal University",country:{name:"Russia"}}},{id:"210551",title:"Dr.",name:"Arbab",middleName:null,surname:"Sikandar",slug:"arbab-sikandar",fullName:"Arbab Sikandar",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/210551/images/system/210551.jpg",biography:"Dr. Arbab Sikandar, PhD, M. Phil, DVM was born on April 05, 1981. He is currently working at the College of Veterinary & Animal Sciences as an Assistant Professor. He previously worked as a lecturer at the same University. \nHe is a Member/Secretory of Ethics committee (No. CVAS-9377 dated 18-04-18), Member of the QEC committee CVAS, Jhang (Regr/Gen/69/873, dated 26-10-2017), Member, Board of studies of Department of Basic Sciences (No. CVAS. 2851 Dated. 12-04-13, and No. CVAS, 9024 dated 20/11/17), Member of Academic Committee, CVAS, Jhang (No. CVAS/2004, Dated, 25-08-12), Member of the technical committee (No. CVAS/ 4085, dated 20,03, 2010 till 2016).\n\nDr. Arbab Sikandar contributed in five days hands-on-training on Histopathology at the Department of Pathology, UVAS from 12-16 June 2017. He received a Certificate of appreciation for contributions for Popularization of Science and Technology in the Society on 17-11-15. He was the resource person in the lecture series- ‘scientific writing’ at the Department of Anatomy and Histology, UVAS, Lahore on 29th October 2015. He won a full fellowship as a principal candidate for the year 2015 in the field of Agriculture, EICA, Egypt with ref. to the Notification No. 12(11) ACS/Egypt/2014 from 10 July 2015 to 25th September 2015.; he received a grant of Rs. 55000/- as research incentives from Director, Advanced Studies and Research, UVAS, Lahore upon publications of research papers in IF Journals (DR/215, dated 19-5-2014.. He obtained his PhD by winning a HEC Pakistan indigenous Scholarship, ‘Ph.D. fellowship for 5000 scholars – Phase II’ (2av1-147), 17-6/HEC/HRD/IS-II/12, November 15, 2012. \n\nDr. Sikandar is a member of numerous societies: Registered Veterinary Medical Practitioner (life member) and Registered Veterinary Medical Faculty of Pakistan Veterinary Medical Council. The Registration code of PVMC is RVMP/4298 and RVMF/ 0102.; Life member of the University of Veterinary and Animal Sciences, Lahore, Alumni Association with S# 664, dated: 6-4-12. ; Member 'Vets Care Organization Pakistan” with Reference No. VCO-605-149, dated 05-04-06. :Member 'Vet Crescent” (Society of Animal Health and Production), UVAS, Lahore.",institutionString:"University of Veterinary & Animal Science",institution:{name:"University of Veterinary and Animal Sciences",country:{name:"Pakistan"}}},{id:"311663",title:"Dr.",name:"Prasanna",middleName:null,surname:"Pal",slug:"prasanna-pal",fullName:"Prasanna Pal",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/311663/images/13261_n.jpg",biography:null,institutionString:null,institution:{name:"National Dairy Research Institute",country:{name:"India"}}},{id:"202192",title:"Dr.",name:"Catrin",middleName:null,surname:"Rutland",slug:"catrin-rutland",fullName:"Catrin Rutland",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/202192/images/system/202192.png",biography:"Catrin Rutland is an Associate Professor of Anatomy and Developmental Genetics at the University of Nottingham, UK. She obtained a BSc from the University of Derby, England, a master’s degree from Technische Universität München, Germany, and a Ph.D. from the University of Nottingham. She undertook a post-doctoral research fellowship in the School of Medicine before accepting tenure in Veterinary Medicine and Science. Dr. Rutland also obtained an MMedSci (Medical Education) and a Postgraduate Certificate in Higher Education (PGCHE). She is the author of more than sixty peer-reviewed journal articles, twelve books/book chapters, and more than 100 research abstracts in cardiovascular biology and oncology. She is a board member of the European Association of Veterinary Anatomists, Fellow of the Anatomical Society, and Senior Fellow of the Higher Education Academy. Dr. Rutland has also written popular science books for the public. https://orcid.org/0000-0002-2009-4898. www.nottingham.ac.uk/vet/people/catrin.rutland",institutionString:null,institution:{name:"University of Nottingham",country:{name:"United Kingdom"}}},{id:"283315",title:"Prof.",name:"Samir",middleName:null,surname:"El-Gendy",slug:"samir-el-gendy",fullName:"Samir El-Gendy",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRduYQAS/Profile_Picture_1606215849748",biography:"Samir El-Gendy is a Professor of anatomy and embryology at the faculty of veterinary medicine, Alexandria University, Egypt. Samir obtained his PhD in veterinary science in 2007 from the faculty of veterinary medicine, Alexandria University and has been a professor since 2017. Samir is an author on 24 articles at Scopus and 12 articles within local journals and 2 books/book chapters. His research focuses on applied anatomy, imaging techniques and computed tomography. Samir worked as a member of different local projects on E-learning and he is a board member of the African Association of Veterinary Anatomists and of anatomy societies and as an associated author at local and international journals. Orcid: https://orcid.org/0000-0002-6180-389X",institutionString:null,institution:{name:"Alexandria University",country:{name:"Egypt"}}},{id:"246149",title:"Dr.",name:"Valentina",middleName:null,surname:"Kubale",slug:"valentina-kubale",fullName:"Valentina Kubale",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/246149/images/system/246149.jpg",biography:"Valentina Kubale is Associate Professor of Veterinary Medicine at the Veterinary Faculty, University of Ljubljana, Slovenia. Since graduating from the Veterinary faculty she obtained her PhD in 2007, performed collaboration with the Department of Pharmacology, University of Copenhagen, Denmark. She continued as a post-doctoral fellow at the University of Copenhagen with a Lundbeck foundation fellowship. She is the editor of three books and author/coauthor of 23 articles in peer-reviewed scientific journals, 16 book chapters, and 68 communications at scientific congresses. Since 2008 she has been the Editor Assistant for the Slovenian Veterinary Research journal. She is a member of Slovenian Biochemical Society, The Endocrine Society, European Association of Veterinary Anatomists and Society for Laboratory Animals, where she is board member.",institutionString:"University of Ljubljana",institution:{name:"University of Ljubljana",country:{name:"Slovenia"}}},{id:"258334",title:"Dr.",name:"Carlos Eduardo",middleName:null,surname:"Fonseca-Alves",slug:"carlos-eduardo-fonseca-alves",fullName:"Carlos Eduardo Fonseca-Alves",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/258334/images/system/258334.jpg",biography:"Dr. Fonseca-Alves earned his DVM from Federal University of Goias – UFG in 2008. He completed an internship in small animal internal medicine at UPIS university in 2011, earned his MSc in 2013 and PhD in 2015 both in Veterinary Medicine at Sao Paulo State University – UNESP. Dr. Fonseca-Alves currently serves as an Assistant Professor at Paulista University – UNIP teaching small animal internal medicine.",institutionString:null,institution:{name:"Universidade Paulista",country:{name:"Brazil"}}},{id:"245306",title:"Dr.",name:"María Luz",middleName:null,surname:"Garcia Pardo",slug:"maria-luz-garcia-pardo",fullName:"María Luz Garcia Pardo",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/245306/images/system/245306.png",biography:"María de la Luz García Pardo is an agricultural engineer from Universitat Politècnica de València, Spain. She has a Ph.D. in Animal Genetics. Currently, she is a lecturer at the Agrofood Technology Department of Miguel Hernández University, Spain. Her research is focused on genetics and reproduction in rabbits. The major goal of her research is the genetics of litter size through novel methods such as selection by the environmental sensibility of litter size, with forays into the field of animal welfare by analysing the impact on the susceptibility to diseases and stress of the does. Details of her publications can be found at https://orcid.org/0000-0001-9504-8290.",institutionString:null,institution:{name:"Miguel Hernandez University",country:{name:"Spain"}}},{id:"41319",title:"Prof.",name:"Lung-Kwang",middleName:null,surname:"Pan",slug:"lung-kwang-pan",fullName:"Lung-Kwang Pan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/41319/images/84_n.jpg",biography:null,institutionString:null,institution:null},{id:"201721",title:"Dr.",name:"Beatrice",middleName:null,surname:"Funiciello",slug:"beatrice-funiciello",fullName:"Beatrice Funiciello",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/201721/images/11089_n.jpg",biography:"Graduated from the University of Milan in 2011, my post-graduate education included CertAVP modules mainly on equines (dermatology and internal medicine) and a few on small animal (dermatology and anaesthesia) at the University of Liverpool. After a general CertAVP (2015) I gained the designated Certificate in Veterinary Dermatology (2017) after taking the synoptic examination and then applied for the RCVS ADvanced Practitioner status. After that, I completed the Postgraduate Diploma in Veterinary Professional Studies at the University of Liverpool (2018). My main area of work is cross-species veterinary dermatology.",institutionString:null,institution:null},{id:"291226",title:"Dr.",name:"Monica",middleName:null,surname:"Cassel",slug:"monica-cassel",fullName:"Monica Cassel",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/291226/images/8232_n.jpg",biography:'Degree in Biological Sciences at the Federal University of Mato Grosso with scholarship for Scientific Initiation by FAPEMAT (2008/1) and CNPq (2008/2-2009/2): Project \\"Histological evidence of reproductive activity in lizards of the Manso region, Chapada dos Guimarães, Mato Grosso, Brazil\\". Master\\\'s degree in Ecology and Biodiversity Conservation at Federal University of Mato Grosso with a scholarship by CAPES/REUNI program: Project \\"Reproductive biology of Melanorivulus punctatus\\". PhD\\\'s degree in Science (Cell and Tissue Biology Area) \n at University of Sao Paulo with scholarship granted by FAPESP; Project \\"Development of morphofunctional changes in ovary of Astyanax altiparanae Garutti & Britski, 2000 (Teleostei, Characidae)\\". She has experience in Reproduction of vertebrates and Morphology, with emphasis in Cellular Biology and Histology. She is currently a teacher in the medium / technical level courses at IFMT-Alta Floresta, as well as in the Bachelor\\\'s degree in Animal Science and in the Bachelor\\\'s degree in Business.',institutionString:null,institution:null},{id:"442807",title:"Dr.",name:"Busani",middleName:null,surname:"Moyo",slug:"busani-moyo",fullName:"Busani Moyo",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Gwanda State University",country:{name:"Zimbabwe"}}},{id:"423023",title:"Dr.",name:"Yosra",middleName:null,surname:"Soltan",slug:"yosra-soltan",fullName:"Yosra Soltan",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Alexandria University",country:{name:"Egypt"}}},{id:"349788",title:"Dr.",name:"Florencia Nery",middleName:null,surname:"Sompie",slug:"florencia-nery-sompie",fullName:"Florencia Nery Sompie",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Sam Ratulangi University",country:{name:"Indonesia"}}},{id:"345713",title:"Dr.",name:"Csaba",middleName:null,surname:"Szabó",slug:"csaba-szabo",fullName:"Csaba Szabó",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Debrecen",country:{name:"Hungary"}}},{id:"345719",title:"Mrs.",name:"Márta",middleName:null,surname:"Horváth",slug:"marta-horvath",fullName:"Márta Horváth",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Debrecen",country:{name:"Hungary"}}},{id:"420151",title:"Prof.",name:"Novirman",middleName:null,surname:"Jamarun",slug:"novirman-jamarun",fullName:"Novirman Jamarun",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Andalas University",country:{name:"Indonesia"}}},{id:"420149",title:"Dr.",name:"Rusmana",middleName:"Wijaya Setia",surname:"Wijaya Setia Ningrat",slug:"rusmana-wijaya-setia-ningrat",fullName:"Rusmana Wijaya Setia Ningrat",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Andalas University",country:{name:"Indonesia"}}},{id:"339759",title:"Mr.",name:"Abu",middleName:null,surname:"Macavoray",slug:"abu-macavoray",fullName:"Abu Macavoray",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Njala University",country:{name:"Sierra Leone"}}},{id:"339758",title:"Prof.",name:"Benjamin",middleName:null,surname:"Emikpe",slug:"benjamin-emikpe",fullName:"Benjamin Emikpe",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Ibadan",country:{name:"Nigeria"}}},{id:"339760",title:"Mr.",name:"Moinina Nelphson",middleName:null,surname:"Kallon",slug:"moinina-nelphson-kallon",fullName:"Moinina Nelphson Kallon",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Njala University",country:{name:"Sierra Leone"}}}]}},subseries:{item:{id:"17",type:"subseries",title:"Metabolism",keywords:"Biomolecules Metabolism, Energy Metabolism, Metabolic Pathways, Key Metabolic Enzymes, Metabolic Adaptation",scope:"Metabolism is frequently defined in biochemistry textbooks as the overall process that allows living systems to acquire and use the free energy they need for their vital functions or the chemical processes that occur within a living organism to maintain life. Behind these definitions are hidden all the aspects of normal and pathological functioning of all processes that the topic ‘Metabolism’ will cover within the Biochemistry Series. Thus all studies on metabolism will be considered for publication.",coverUrl:"https://cdn.intechopen.com/series_topics/covers/17.jpg",hasOnlineFirst:!0,hasPublishedBooks:!0,annualVolume:11413,editor:{id:"138626",title:"Dr.",name:"Yannis",middleName:null,surname:"Karamanos",slug:"yannis-karamanos",fullName:"Yannis Karamanos",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002g6Jv2QAE/Profile_Picture_1629356660984",biography:"Yannis Karamanos, born in Greece in 1953, completed his pre-graduate studies at the Université Pierre et Marie Curie, Paris, then his Masters and Doctoral degree at the Université de Lille (1983). He was associate professor at the University of Limoges (1987) before becoming full professor of biochemistry at the Université d’Artois (1996). He worked on the structure-function relationships of glycoconjugates and his main project was the investigations on the biological roles of the de-N-glycosylation enzymes (Endo-N-acetyl-β-D-glucosaminidase and peptide-N4-(N-acetyl-β-glucosaminyl) asparagine amidase). From 2002 he contributes to the understanding of the Blood-brain barrier functioning using proteomics approaches. He has published more than 70 papers. His teaching areas are energy metabolism and regulation, integration and organ specialization and metabolic adaptation.",institutionString:null,institution:{name:"Artois University",institutionURL:null,country:{name:"France"}}},editorTwo:null,editorThree:null,series:{id:"11",title:"Biochemistry",doi:"10.5772/intechopen.72877",issn:"2632-0983"},editorialBoard:[{id:"243049",title:"Dr.",name:"Anca",middleName:null,surname:"Pantea Stoian",slug:"anca-pantea-stoian",fullName:"Anca Pantea Stoian",profilePictureURL:"https://mts.intechopen.com/storage/users/243049/images/system/243049.jpg",institutionString:null,institution:{name:"Carol Davila University of Medicine and Pharmacy",institutionURL:null,country:{name:"Romania"}}},{id:"203824",title:"Dr.",name:"Attilio",middleName:null,surname:"Rigotti",slug:"attilio-rigotti",fullName:"Attilio Rigotti",profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institutionString:null,institution:{name:"Pontifical Catholic University of Chile",institutionURL:null,country:{name:"Chile"}}},{id:"300470",title:"Dr.",name:"Yanfei (Jacob)",middleName:null,surname:"Qi",slug:"yanfei-(jacob)-qi",fullName:"Yanfei (Jacob) Qi",profilePictureURL:"https://mts.intechopen.com/storage/users/300470/images/system/300470.jpg",institutionString:null,institution:{name:"Centenary Institute of Cancer Medicine and Cell Biology",institutionURL:null,country:{name:"Australia"}}}]},onlineFirstChapters:{paginationCount:0,paginationItems:[]},publishedBooks:{paginationCount:1,paginationItems:[{type:"book",id:"10654",title:"Brain-Computer Interface",subtitle:null,coverURL:"https://cdn.intechopen.com/books/images_new/10654.jpg",slug:"brain-computer-interface",publishedDate:"May 18th 2022",editedByType:"Edited by",bookSignature:"Vahid Asadpour",hash:"a5308884068cc53ed31c6baba756857f",volumeInSeries:9,fullTitle:"Brain-Computer Interface",editors:[{id:"165328",title:"Dr.",name:"Vahid",middleName:null,surname:"Asadpour",slug:"vahid-asadpour",fullName:"Vahid Asadpour",profilePictureURL:"https://mts.intechopen.com/storage/users/165328/images/system/165328.jpg",institutionString:"Kaiser Permanente Southern California",institution:null}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null}]},testimonialsList:[{id:"27",text:"The opportunity to work with a prestigious publisher allows for the possibility to collaborate with more research groups interested in animal nutrition, leading to the development of new feeding strategies and food valuation while being more sustainable with the environment, allowing more readers to learn about the subject.",author:{id:"175967",name:"Manuel",surname:"Gonzalez Ronquillo",institutionString:null,profilePictureURL:"https://mts.intechopen.com/storage/users/175967/images/system/175967.png",slug:"manuel-gonzalez-ronquillo",institution:{id:"6221",name:"Universidad Autónoma del Estado de México",country:{id:null,name:"Mexico"}}}},{id:"8",text:"I work with IntechOpen for a number of reasons: their professionalism, their mission in support of Open Access publishing, and the quality of their peer-reviewed publications, but also because they believe in equality.",author:{id:"202192",name:"Catrin",surname:"Rutland",institutionString:null,profilePictureURL:"https://mts.intechopen.com/storage/users/202192/images/system/202192.png",slug:"catrin-rutland",institution:{id:"134",name:"University of Nottingham",country:{id:null,name:"United Kingdom"}}}},{id:"18",text:"It was great publishing with IntechOpen, the process was straightforward and I had support all along.",author:{id:"71579",name:"Berend",surname:"Olivier",institutionString:"Utrecht University",profilePictureURL:"https://mts.intechopen.com/storage/users/71579/images/system/71579.png",slug:"berend-olivier",institution:{id:"253",name:"Utrecht University",country:{id:null,name:"Netherlands"}}}}]},submityourwork:{pteSeriesList:[],lsSeriesList:[],hsSeriesList:[],sshSeriesList:[],subseriesList:[],annualVolumeBook:{},thematicCollection:[],selectedSeries:null,selectedSubseries:null},seriesLanding:{item:null},libraryRecommendation:{success:null,errors:{},institutions:[]},route:{name:"chapter.detail",path:"/chapters/9903",hash:"",query:{},params:{id:"9903"},fullPath:"/chapters/9903",meta:{},from:{name:null,path:"/",hash:"",query:{},params:{},fullPath:"/",meta:{}}}},function(){var e;(e=document.currentScript||document.scripts[document.scripts.length-1]).parentNode.removeChild(e)}()