\r\n\tOver the years, the concept of maintenance became more comprehensive, reducing fault occurrence and increasing industrial system availability. Besides, reliability, safety, and criticality requirements were associated with the system or equipment under analysis. Maintenance strategies or schemes can be classified as corrective (run-to-break), preventive (time-based), and predictive (condition-based maintenance). Corrective maintenance is only performed after an occurrence of a fault. Therefore, it involves unexpected breakdowns, high costs, changes in the production chain, and it could lead to catastrophic events. Preventive maintenance and interventions occur based on a scheduled maintenance plan or the equipment's mean time between failures. Although it is more effective than corrective maintenance, unexpected failure may still occur by preventing most failures. Additionally, the process cost is still high, especially the costs associated with labor, inventory, and unnecessary replacement of equipment or components. \r\n\tOn the other hand, predictive maintenance analyses the equipment condition so that a possible fault can still be identified at an early stage. Predictive maintenance aims to identify a machine anomaly so that it does not result in a fault. Such maintenance involves advanced monitoring, processing, and signal analysis techniques, which are generally performed non-invasively and, in many cases, in real-time. In the case of machines or processes, these techniques can be developed based on vibration, temperature, acoustic emission, or electrical current signal monitoring. It should be noted that monitoring such signals or parameters to verify the operating condition is called condition monitoring. Condition monitoring aims to observe the machine's current operational condition and predict its future condition, keeping it under a systematic analysis during its remaining life. In this sense, a fault condition can be detected and identified from systematic machine condition monitoring. A diagnosis procedure can be established, whereby properly investigating the fault symptoms and prognosis.
\r\n
\r\n\t \r\n\tThis book will aim to merge all these ideas in a single volume, aggregate new maintenance experiences, apply new techniques and approaches, and report field experiences to establish new maintenance processes and management paradigms. \r\n\t
",isbn:"978-1-80356-480-7",printIsbn:"978-1-80356-479-1",pdfIsbn:"978-1-80356-481-4",doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!0,isSalesforceBook:!1,hash:"a3e4ad5806a77b0e930fbd4cb191bee2",bookSignature:"Prof. Germano Lambert-Torres, Dr. Erik Leandro Bonaldi and Dr. Levy Ely Oliveira",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/11528.jpg",keywords:"Deterioration Level, System Performance, Corrective Maintenance, Preventive Maintenance, Risk-Based Maintenance, Predictive Maintenance, Maintenance Intervention, Examples of Maintenance Processes, Results of the Maintenance Processes, Higher Plant Availability, Failure Modes, Reliability",numberOfDownloads:null,numberOfWosCitations:0,numberOfCrossrefCitations:null,numberOfDimensionsCitations:null,numberOfTotalCitations:null,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"March 3rd 2022",dateEndSecondStepPublish:"May 5th 2022",dateEndThirdStepPublish:"July 4th 2022",dateEndFourthStepPublish:"September 22nd 2022",dateEndFifthStepPublish:"November 21st 2022",remainingDaysToSecondStep:"11 days",secondStepPassed:!0,currentStepOfPublishingProcess:3,editedByType:null,kuFlag:!1,biosketch:"Fellow of the IEEE for his contributions to the applications of intelligent systems to power systems. He has more than 15 registered patents, more than 50 registered software, and more than 100 funded R&D projects for South-America companies.",coeditorOneBiosketch:"Dr. Bonaldi has more than 15 registered patents and 30 registered software. He has coordinated more than 30 R&D projects for power companies in Brazil.",coeditorTwoBiosketch:"Dr. Levy Ely Oliveira has more than ten registered patents and 30 registered software. He has participated in more than 50 R&D projects for power companies.",coeditorThreeBiosketch:null,coeditorFourBiosketch:null,coeditorFiveBiosketch:null,editors:[{id:"112971",title:"Prof.",name:"Germano",middleName:null,surname:"Lambert-Torres",slug:"germano-lambert-torres",fullName:"Germano Lambert-Torres",profilePictureURL:"https://mts.intechopen.com/storage/users/112971/images/system/112971.jpg",biography:"Germano Lambert-Torres is a Professor at the Instituto Gnarus. He received his Ph.D. degree in Electrical Engineering from the Ecole Polytechnique de Montreal, Canada, in 1990. From 1983 to 2012, he was with the Electrical Engineering Department, Itajuba Federal University (UNIFEI), where he was also the Dean of the Research and Graduate Studies, from 2000 to 2004. Since 2010, he has been the Director of R&D, PS Solucoes, Itajuba. He also serves as a consultant for many utility companies in Brazil and South America and has taught numerous IEEE tutorials in the USA, Europe, and Asia. He has completed more than 90 M.Sc. and Ph.D. thesis supervisions and published more than 600 journal and technical conference papers. He is also the author/editor or coauthor of ten books, more than 50 book chapters, and 150 transactions articles on intelligent systems and nonclassical logic. Dr. Lambert-Torres is an IEEE Fellow.",institutionString:"PS Solutions Co.",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"6",totalChapterViews:"0",totalEditedBooks:"0",institution:null}],coeditorOne:{id:"117413",title:"Dr.",name:"Erik",middleName:"Leandro",surname:"Bonaldi",slug:"erik-bonaldi",fullName:"Erik Bonaldi",profilePictureURL:"https://mts.intechopen.com/storage/users/117413/images/system/117413.png",biography:"Erik Leandro Bonaldi received his B.S., M.Sc., and Ph.D. degrees in Electrical Engineering from Itajuba Federal University, Itajuba, Brazil, in 1999, 2002, and 2006, respectively. He is currently the CEO at PS Solutions, in Brazil, directly commanding the largest national factory of power capacitors, wrappers, and the fabrication of sensors, smart devices, and communication systems for predictive maintenance of induction motors, transformers, and generators. His research focuses on industrial electronic automation, predictive maintenance, and artificial intelligence methodologies.",institutionString:"PS Solutions",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"3",totalChapterViews:"0",totalEditedBooks:"0",institution:null},coeditorTwo:{id:"117672",title:"Dr.",name:"Levy Ely",middleName:null,surname:"Oliveira",slug:"levy-ely-oliveira",fullName:"Levy Ely Oliveira",profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:"PS Solutions",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"3",totalChapterViews:"0",totalEditedBooks:"0",institution:null},coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"11",title:"Engineering",slug:"engineering"}],chapters:null,productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},personalPublishingAssistant:{id:"466998",firstName:"Dragan",lastName:"Miljak",middleName:"Anton",title:"Dr.",imageUrl:"https://mts.intechopen.com/storage/users/466998/images/21564_n.jpg",email:"dragan@intechopen.com",biography:"As an Author Service Manager my responsibilities include monitoring and facilitating all publishing activities for authors and editors. From chapter submission and review, to approval and revision, copyediting and design, until final publication, I work closely with authors and editors to ensure a simple and easy publishing process. I maintain constant and effective communication with authors, editors and reviewers, which allows for a level of personal support that enables contributors to fully"}},relatedBooks:[{type:"book",id:"10198",title:"Response Surface Methodology in Engineering Science",subtitle:null,isOpenForSubmission:!1,hash:"1942bec30d40572f519327ca7a6d7aae",slug:"response-surface-methodology-in-engineering-science",bookSignature:"Palanikumar Kayaroganam",coverURL:"https://cdn.intechopen.com/books/images_new/10198.jpg",editedByType:"Edited by",editors:[{id:"321730",title:"Prof.",name:"Palanikumar",surname:"Kayaroganam",slug:"palanikumar-kayaroganam",fullName:"Palanikumar Kayaroganam"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"1591",title:"Infrared Spectroscopy",subtitle:"Materials Science, Engineering and Technology",isOpenForSubmission:!1,hash:"99b4b7b71a8caeb693ed762b40b017f4",slug:"infrared-spectroscopy-materials-science-engineering-and-technology",bookSignature:"Theophile Theophanides",coverURL:"https://cdn.intechopen.com/books/images_new/1591.jpg",editedByType:"Edited by",editors:[{id:"37194",title:"Dr.",name:"Theophile",surname:"Theophanides",slug:"theophile-theophanides",fullName:"Theophile Theophanides"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3161",title:"Frontiers in Guided Wave Optics and Optoelectronics",subtitle:null,isOpenForSubmission:!1,hash:"deb44e9c99f82bbce1083abea743146c",slug:"frontiers-in-guided-wave-optics-and-optoelectronics",bookSignature:"Bishnu Pal",coverURL:"https://cdn.intechopen.com/books/images_new/3161.jpg",editedByType:"Edited by",editors:[{id:"4782",title:"Prof.",name:"Bishnu",surname:"Pal",slug:"bishnu-pal",fullName:"Bishnu Pal"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3092",title:"Anopheles mosquitoes",subtitle:"New insights into malaria vectors",isOpenForSubmission:!1,hash:"c9e622485316d5e296288bf24d2b0d64",slug:"anopheles-mosquitoes-new-insights-into-malaria-vectors",bookSignature:"Sylvie Manguin",coverURL:"https://cdn.intechopen.com/books/images_new/3092.jpg",editedByType:"Edited by",editors:[{id:"50017",title:"Prof.",name:"Sylvie",surname:"Manguin",slug:"sylvie-manguin",fullName:"Sylvie Manguin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"371",title:"Abiotic Stress in Plants",subtitle:"Mechanisms and Adaptations",isOpenForSubmission:!1,hash:"588466f487e307619849d72389178a74",slug:"abiotic-stress-in-plants-mechanisms-and-adaptations",bookSignature:"Arun Shanker and B. Venkateswarlu",coverURL:"https://cdn.intechopen.com/books/images_new/371.jpg",editedByType:"Edited by",editors:[{id:"58592",title:"Dr.",name:"Arun",surname:"Shanker",slug:"arun-shanker",fullName:"Arun Shanker"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"72",title:"Ionic Liquids",subtitle:"Theory, Properties, New Approaches",isOpenForSubmission:!1,hash:"d94ffa3cfa10505e3b1d676d46fcd3f5",slug:"ionic-liquids-theory-properties-new-approaches",bookSignature:"Alexander Kokorin",coverURL:"https://cdn.intechopen.com/books/images_new/72.jpg",editedByType:"Edited by",editors:[{id:"19816",title:"Prof.",name:"Alexander",surname:"Kokorin",slug:"alexander-kokorin",fullName:"Alexander Kokorin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"314",title:"Regenerative Medicine and Tissue Engineering",subtitle:"Cells and Biomaterials",isOpenForSubmission:!1,hash:"bb67e80e480c86bb8315458012d65686",slug:"regenerative-medicine-and-tissue-engineering-cells-and-biomaterials",bookSignature:"Daniel Eberli",coverURL:"https://cdn.intechopen.com/books/images_new/314.jpg",editedByType:"Edited by",editors:[{id:"6495",title:"Dr.",name:"Daniel",surname:"Eberli",slug:"daniel-eberli",fullName:"Daniel Eberli"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"57",title:"Physics and Applications of Graphene",subtitle:"Experiments",isOpenForSubmission:!1,hash:"0e6622a71cf4f02f45bfdd5691e1189a",slug:"physics-and-applications-of-graphene-experiments",bookSignature:"Sergey Mikhailov",coverURL:"https://cdn.intechopen.com/books/images_new/57.jpg",editedByType:"Edited by",editors:[{id:"16042",title:"Dr.",name:"Sergey",surname:"Mikhailov",slug:"sergey-mikhailov",fullName:"Sergey Mikhailov"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"1373",title:"Ionic Liquids",subtitle:"Applications and Perspectives",isOpenForSubmission:!1,hash:"5e9ae5ae9167cde4b344e499a792c41c",slug:"ionic-liquids-applications-and-perspectives",bookSignature:"Alexander Kokorin",coverURL:"https://cdn.intechopen.com/books/images_new/1373.jpg",editedByType:"Edited by",editors:[{id:"19816",title:"Prof.",name:"Alexander",surname:"Kokorin",slug:"alexander-kokorin",fullName:"Alexander Kokorin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"2270",title:"Fourier Transform",subtitle:"Materials Analysis",isOpenForSubmission:!1,hash:"5e094b066da527193e878e160b4772af",slug:"fourier-transform-materials-analysis",bookSignature:"Salih Mohammed Salih",coverURL:"https://cdn.intechopen.com/books/images_new/2270.jpg",editedByType:"Edited by",editors:[{id:"111691",title:"Dr.Ing.",name:"Salih",surname:"Salih",slug:"salih-salih",fullName:"Salih Salih"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}]},chapter:{item:{type:"chapter",id:"78176",title:"Physics of Absorption and Generation of Electromagnetic Radiation",doi:"10.5772/intechopen.99037",slug:"physics-of-absorption-and-generation-of-electromagnetic-radiation",body:'
1. Introduction
X-rays are used to detect bone fracture and determine the crystals structure. The electromagnetic radiation are also used to guide airplanes and missile systems. Gamma rays are used in radio therapy for the treatment of cancer and tumor Gamma rays are used to produce nuclear reaction. The earth get heat from Infrared waves. It is used to kill microorganism. Ultraviolet rays are used for the sterilizing of surgical instruments. It is also used for study molecular structure and in high resolving power microscope. The color of an object is due to the reflection or transmission of different colors of light. For example, a fire truck appears red because it reflects red light and absorbs more green and blue wavelengths. Electromagnetic waves have a huge range of applications in broadcasting, WiFi, cooking, vision, medical imaging, and treating cancer. Sequential arrangement of electromagnetic waves according to their frequencies or wave lengths in the form of distinct of groups having different properties in called electromagnetic spectrum. In this section, we discuss how electromagnetic waves are classified into categories such as radio, infrared, ultraviolet, which are classified in Table 1. We also summarize some of the main applications for each range of electromagnetic waves. Radio waves are commonly used for audio communications with wavelengths greater than about 0.1 m. Radio waves are produced from an alternating current flowing in an antenna.
The Electromagnetic Spectrum
Frequency (Hz)
Nature
Wavelength (m)
Production
Applications
1022
gamma rays
10−13
Nuclear decay
Cosmic rays
1021
gamma rays
10−12
Nuclear decay
Cancer therapy
1018
x rays
10−9
Inner electronic transitions and fast collisions
Medical diagnosis
1016
ultraviolet
10−7
Sterilization
1015
visible
10−6
Thermal agitation and electronic transitions
Vision, astronomy, optical
6.5 × 1014
blue
4.6 × 10−7
5.6 × 1014
green
5.4 × 10−7
3.9 × 1014
red
7.6 × 10−7
1014
infrared
10−5
Thermal agitation and electronic transitions
Heating, night vision, optical communications
109
UHF
10−3
Accelerating charges and thermal agitation
Microwave ovens
1010
EHF
10−1
Remote sensing
108
TV FM
10
Radio transmission
106
AM
103
Radio signals
104
RF
105
Accelerating charges
Table 1.
The electromagnetic spectrum.
2. Current status of the research
Underwater communications have been performed by acoustic and optical systems. But the performance of underwater communications is affected by multipath propagation in the shallow water. The optical systems have higher propagation speed than underwater acoustic waves but the strong backscattering due to suspended particles in water always limits the performance of optical systems [1]. UV radiation, free radicals and shock waves generated from electromagnetic fields are effectively used to sterilize bacteria. Pulsed electromagnetic fields (streamer discharge) in water are employed for the sterilization of bacteria. For biological applications of pulsed electromagnetic field, electroporation is usually used to sterilize bacteria. This technique is commonly applied for sterilization in food processing. The cells in the region of tissue hit by the laser beam (high intensities ∼10 – 100 W/cm2) usually dies and the resulting region of tissue burn is called a photocoagulation burn. Photocoagulation burns are used to destroy tumors, treat eye conditions and stop bleeding.
Electromagnetic waves in the RF range can also be used for underwater wireless communication systems. The velocity of EM waves in water is more than 4 orders faster than acoustic waves so the channel latency is greatly reduced. In addition, EM waves are less sensitive than acoustic waves to reflection and refraction effects in shallow water. Moreover, suspended particles have very little impact on EM waves. Few underwater communication systems (based on EM waves) have been proposed in reference [2, 3]. The primary limitation of EM wave propagation in water is the high attenuation due to the conductivity of water. For example, it has been shown in [4] that conventional RF propagation works poorly in seawater due to the losses caused by the high conductivity of seawater (typically, 4 S/m). However, fresh water has a typical conductivity of only 0.01 S/m, which is 400 times less than the typical conductivity of seawater. Therefore, EM wave propagation can be more efficient in fresh water than in seawater. Jiang, and Georgakopoulos analyzed the propagation and transmission losses for a plane wave propagating from air to water (frequency range of 23 kHz to 1 GHz). It has been depicted that the propagation loss increases as the depth increases, whereas the transmission loss remains the same for all propagation depths [5]. Mazharimousavi et al. considered variable permeability and permittivity to solve the wave equation in material layers [6]. The Compton and Raman scattering effects are widely employed in the concept of free electron lasers. These nonlinear effects have great importance for fusion physics, laser-plasma acceleration and EM-field harmonic generation. Matsko and Rostovtsev investigated the behavior of overdense plasmas in the presence of the Electromagnetic fields, which can lead to the nonlinear effects such as Raman scattering, modulational instability and self-focusing [7]. The increasing relativistic mass of the particles can make plasma transparent in the presence of high intense the electromagnetic field change the properties of plasmas [8]. The models of electromagnetic field generated in a non absorbing anisotropic multilayer used to study the optical properties of liquid crystals and propagation of electromagnetic waves in magneto active plasmas [9]. Pulse power generator based on electromagnetic theory has applications such as water treatment, ozone generation, food processing, exhaust gas treatment, engine ignition, medical treatment and ion implantation. The similar work was reviewed by Akiyama et al. [10]
Applications for environmental fields involving the decomposition of harmful gases, generation of ozone, and water treatment by discharge plasmas in water utilizing pulsed power discharges have been studied [11, 12, 13, 14]. High power microwave can be involved to joining of solid materials, to heat a surface of dielectric material and synthesis of nanocomposite powders. Bruce et al. used a high-power millimeter wave beam for joining ceramics tubes with the help of 83-GHz Gyrotron [15]. The use of shock waves to break up urinary calculi without surgery, is called as extracorporeal shock wave lithotripsy. Biofilm removal to inactivation of fungi, gene therapy and oncology are the interesting uses of shock waves lithotripsy. Loske overviewed the biomedical applications (orthopedics, cardiology, traumatology, rehabilitation, esthetic therapy) of shock waves including some current research. [16]. Watts et al. have reported the theory, characterization and fabrications of metamaterial perfect absorbers (MPAs) of electromagnetic waves. The motivation for studying MPAs comes mainly from their use in potential applications as selective thermal emitters in automotive radar, in local area wireless network at the frequency range of 92–95 GHz and in imaging at frequency 95 and 110 GHz. [17]. Ayala investigated the applications of millimeter waves for radar sensors [18]. Metamaterial perfect absorbers are useful for spectroscopy and imaging, actively integrated photonic circuits and microwave-to-infrared signature control [19, 20, 21]. In [22, 23], authors show the importance of THz pulse imaging system for characterizing biological tissues such as skin, muscle and veins. Reference [24] reported the propagation of EM waves on a graphene sheet. The Reference [25] compared the CNT-based nano dipole antenna and GNR-based nano patch antenna. Due to short wavelength, even a minute variations in water contents and biomaterial tissues can be detected by terahertz radiations due to existence of molecular resonances at such frequencies. Consequently, one of the emerging areas of research is analyzing the propagation of terahertz electromagnetic waves through the tissues to develop diagnostic tools for early detection and treatment such as abnormalities in skin tissues as a sign of skin cancer [26]. Shock waves may stimulate osteogenesis and chondrogenesis effects [27], induce analgesic effects [28] and tissue repair mechanisms [29]. Shock waves therapy are also used to treat oncological diseases and other hereditary disorders [27, 30]. Chen et al. proposed a mathematical model for the propagating of electromagnetic waves coupling for deep implants and simulated through COMSOL Multiphysics [31]. Body area networks technological is used to monitor medical sensors implanted or worn on the body, which measure important physical and physiological parameters [32, 33]. Marani and Perri reviewed the aspects of Radio Frequency Identification technology for the realization of miniaturized devices, which are implantable in the human body [34]. Ultrasonic can transport high power and can penetrate to a deeper tissue with better power efficiency. [35, 36]. Ref. [37], discuss the radar-based techniques to detect human motions, wireless implantable devices and the characterization of biological materials. Low frequency can deliver more power with deeper penetrating ability in tissue [38, 39]. Contactless imaging techniques based on electromagnetic waves are under continuous research. Magnetic resonance imaging technology and physiological processes of biological tissues and organisms [40, 41]. The electrical properties of biological mediums are found very useful because it is related to the pathological and physiological state of the tissues [42, 43, 44].
3. Interaction of electromagnetic wave fields with biological tissues
From last decade, researchers are interested about biological effects of electromagnetic energy due to public concern with radiation safety and measures. The electromagnetic energy produces heating effects in the biological tissues by increasing the kinetic energy of the absorbing molecules. Therefore the body tissues absorb strongly in the UV and in the Blue/green portion of the spectrum and transmit reds and IR. A surgeon can select a particular laser to target cells for photovaporization by determining which wavelengths your damaged cell will absorb and what the surrounding tissue will not. The heating of biological tissues depends on dielectric properties of the tissues, tissue geometry and frequency of the source. The tissues of the human body are extremely complex. Biological tissues are composed of the extracellular matrix (ECM), cells and the signaling systems. The signaling systems are encoded by genes in the nuclei of the cells. The cells in the tissues reside in a complex extracellular matrix environment of proteins, carbohydrates and intracellular fluid composed of several salt ions, polar water molecules and polar protein molecules. The dielectric constant of tissues decreases as the frequency is increased to GHz level. The effective conductivity, rises with frequency. The tissues of brain, muscle, liver, kidney and heart have larger dielectric constant and conductivity as compared to tissues of fat, bone and lung. The action of electromagnetic fields on the tissues produce the rotation of dipole molecules at the frequency of the applied electromagnetic energy which in turn affects the displacement current through the medium with an associated dielectric loss due to viscosity. The electromagnetic field also produce the oscillation of the free charges, which in turn gives rise to conduction currents with an associated energy loss due to electrical resistance of the medium. The interaction of electromagnetic wave fields with biological tissues is related to dielectric properties. Johnson and Guy reviewed the absorption and scattering effects of light in biological tissues [45]. In ref. [46], the method of warming of human blood from refrigerated (bank blood storage temperature ∼ 4 to 6°C) has been discussed with the help of microwave.
4. Complex dielectric permittivity
The dielectric permittivity of a material is a complex number containing both real and imaginary components. It describes a material’s ability to permit an electric field. It dependent on the frequency, temperature and the properties of the material. This can be expressed by
εc=ε0ε\'−jε″E1
where ε\' is the dielectric constant of the medium. The ε″ is called the loss factor of the medium and related with the effective conductivity such that ε″=σε0ω. These coefficients are related through by loss tangent tanδ=ε″ε\' . In other words loss factor is the product of loss tangent and dielectric constant, that is ε″=ε\'tanδ. The loss tangent depends on frequency, moisture content and temperature. If all energy is dissipated and there is no charging current then the loss tangent would tend to infinity and if no energy is dissipated, the loss tangent is zero [45, 47, 48, 49]. The high power electromagnetic waves are used to generate plasma through laser plasma interaction. Gaseous particles are ionized to bring it in the form of plasma through injection of high frequency microwaves. The electrical permittivity in plasma is affected by the plasma density [50]. If the microwave electric field (E∼) and the velocity (v∼) are assumed to be varying witheiωt, the plasma dielectric constant can be read as,
ϵ=ϵ01−ωpe2ω2E2
Where; the ωpe is the electron plasma frequency and given by the relation,
ωpe=nee2ϵ0meE3
Recently many researchers have studied the plasma instabilities in a crossed field devices called Hall thrusters (space propulsion technology). The dispersion relations for the low and high frequency electrostatic and electromagnetic waves are derived in the magnetized plasma. The dispersion relations for the resistive and Rayliegh Taylor instabilities has been derived for the propagation of waves in a magnetized plasma under the effects of various parameters [51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61].
5. Propagation of EM fields (waves) in conductors
The behavior of EM waves in a conductor is quite different from that in a source-free medium. The conduction current in a conductor is the cause of the difference. We shall analyze the source terms in the Maxwell’s equations to simplify Maxwell’s equations in a conductor. From this set of equations, we can derive a diffusion equation and investigate the skin effects.
5.1 Gauss’ law for electric field
The Electric flux φE through a closed surface A is proportional to the net charge q enclosed within that surface.
φE=∮E→⋅n̂dA=qε0=1ε0∫VρdVE4
Differential form,∇→⋅E→=ρε0E5
5.2 Faraday’s law
The electromagnetic force induced in a closed loop, is proportional to the negative of the rate of change of the magnetic flux, φB through the closed loop,
∮E→⋅dl→=∂φB∂t=∂∂t∮B→⋅dAE6
Faraday’s law in differential form,
∇→×E→=−∂B→∂tE7
5.3 Magnetic Gauss’s law for magnetic field
The Magnetic flux φB through a closed surface, A is equal to zero.
φB=∮B→⋅dA=0E8
In the differential form
∇→⋅B→=0E9
5.4 Ampere’s law
The path integral of the magnetic field around any closed loop, is proportional to the current enclosed by the loop plus the displacement current enclosed by the loop.
∮B→⋅dl→=μ0I+μ0ε0∂φE∂tE10
Ampere’s law in differential form
∇→×B→=μσE→+με∂E→∂tE11
6. Properties of plane wave (monochromatic) in vacuum
Let us assume that the wave equations (fields) has the solution in the form of E→B→=E→0B→0e−ikz−ωt, then the vector operators can be written as ∇→−ik and ∂∂t→iω.
The vector k and fields E→B→ are perpendicular
From Gauss’s law k⋅E=0
The field B→ is perpendicular to the vector k and field E→
From Faraday’s law −ik→×E→=−iωB→
⇒B→=k→×E→ω=kk̂×E→ω=k̂×E→cE12
Where we have used ω=ck and unit vector k̂=k→k. This implies that all three vectors are perpendicular to one another (Figure 1).
Figure 1.
Orientations of electric field, magnetic field and wave vector.
Let us apply curl operator to the 2nd equation.
Maxwell’s equation:
∇→×∇→×E→=−∇→×∂B→∂t=−∂∂t∇→×B→=−∂∂tμσE→+με∂E→∂tE13
So
−∇2E→=−μσ∂E→∂t−με∂2E→∂t2E14
Similar, the magnetic field satisfy the same equation
−∇2B→=−μσ∂B→∂t−με∂2B→∂t2E15
6.1 Skin depth
Suppose we have a plane wave field. It comes from the −z direction and reaches a large conductor. Surface at z=0 outside of a conductor: E=E0e−iωtex at z=0. Looking for the wave like solution of electric (magnetic) fields by assuming the wave inside the conductor has the form, where k is an unknown constant. Suppose, the waves are traveling only in the z direction (no x or y components). These waves are called plane waves, because the fields are uniform over every plane perpendicular to the direction of propagation. We are interested, then, in fields of the form
E→B→=E→0B→0e−ikz−ωtE16
for the waves of the above type, we find from the diffusion equation
k2E=−iωμσE+μεω2EE17
Or k2+iωμσ−μεω2E=0
For non−trivial solutionk2+iωμσ−μεω2=0E18
The presence of imaginary term due to conductivity of the medium gives different dispersion relation from the dielectric medium. From Eq. (18) we can expect the wave vector to have complex form.
Let us write
k→=α→−iβ→E19
Here the real part α→ determine the wavelength, refractive index and the phase velocity of the wave in a conductor. The imaginary part β→ corresponds to the skin depth in a conductor. The solutions of Eqs. (18) and (19), gives the real and imaginary part of wave vector k in terms of materials’ properties.
α=ωεμ21+σ2ε2ω2+112E20
Andβ=ωμσ2αE21
Orβ=ωεμ21+σ2ε2ω2−112E22
If we use complex wave vector k→=α→−iβ→ into Eq. (16), then the wave equation for a conducting medium can be written as
E→=E→0e−βze−iαz−ωtE23
It is clear from the above equation that the conductivity of the medium affects the wavelength for a fixed frequency. The first exponential factor e−βz gives an exponential decay in the amplitude (with increasing z) of the wave as shown in Figure 2. The cause of the decay of the amplitude of the wave can be explained in a very precise way in terms of conservation of energy. Whenever the incoming electromagnetic radiation interacts with a conducting material, it produces current in the in the conductor. The current produces Joule heating effect which must be compensated from the energy of the wave. Therefore we can expect the decay in the amplitude of the wave. The second factor e−iαz−ωt gives the plane wave variations with space and time.
Figure 2.
Decaying of electromagnetic field.
7. Alternating magnetic field in a conducting media
From Faraday’s law, the both fields are related by
k→×E→0=ωB→0E24
OrB→0=k→×E→0ωE25
Thus as in dielectric case, both fields are perpendicular to each other and also perpendicular to the direction of motion with same phase angle.
7.1 Phase change in fields in a conducting media
The complex wave vector k, gives the phase angle between the fields in a conducting medium. Let us assume that E is polarized along the x direction
E→=îE→0e−βze−iαz−ωtE26
And the magnetic field results from Eq. (25) is given by
B→=ĵkωE→0e−βze−iαz−ωtE27
From Eq. (19), the complex number k can be written as
k=α2+β2eiφ=ReiφE28
ThusR=α2+β2=ωεμ1+σ2ε2ω214E29
And the phase angleφ=tan−1βαE30
Further if the initial phases of the fields are φE and φB, then the amplitude are given by
In other words, we can say that the magnetic field advanced from electric field by the phase angle φ. In terms of sinusoidal form, these fields follow the following expressions.
E→=îE→0e−βzcosωt−αz+φEE37
And the magnetic field results from Eq. (32) is given by
B→=ĵB→0e−βzcosωt−αz+φE+φE38
The above equations direct that the amplitude of an electromagnetic wave propagating (through a conductor) decays exponentially on a characteristic length scale, d, that is known as the skin-depth [48].
7.2 Skin depth
Skin depth measure the distance that the wave travels before it’s amplitude falls to 1/e of its original value [48]. From Eq. (37), the amplitude of the wave falls by a factor 1/e in a distance z=1β. In other words it is a measure of how far the wave penetrates into the conductor. Mathematically skin depth is denoted by δ, therefore
δ=1βE39
If we study poor conductor, which satisfies the inequality σ<<εω, then Eqs. (20) and (21) leads to
The Eq. (41) state that at higher frequency, the absorbing parameter lost its significance that is β<<α. We can conclude that at higher frequency the wavelength does not decay very fast in a poor conductor. Moreover both the fields are also in same phase by the relation ωB0=αE0. Also the phase velocity is independent from the frequency [47].
8. Wave propagation in perfect conductors
The transmission lines and communication systems are made up with silver, copper and aluminum. In most cases these conductors satisfies the inequality σ>>εω, then Eqs. (20) and (21) leads to
α≈ωμσ2E46
Andβ≈ωμσ2E47
Thereforeβ≈αE48
Skin depthδ=1β=1α=2ωμσE49
The wave decays significantly within one wavelength. Since δ∝1/ωσ, the deep penetration occurs, when the inequalityσ<<εω is satisfied (at Low frequency in a Poor conductor).
9. Electromagnetic wave propagation into water
EM wave propagation can be more efficient in fresh water than in seawater. The radiofrequency wave propagation works poorly in seawater due to the losses caused by the high conductivity of seawater. The limitation of EM wave propagation in water is the high attenuation due to the conductivity of water (typically, 4 S/m), however fresh water has a conductivity of 0.01 S/m. These properties are used to construct underwater sensor network based on electromagnetic waves to trace out the natural resources buried underwater, where the conventional optical water sensors are difficult to utilize in an underwater environment due to backscatter and absorptions [47].
Example:
For sea water,
μ=μ0=4π×10−7N/A2,ε≅81ε0 and σ≈5Ω.m−1.
The skin depth in poor conductor
δ=2σεμ=2σ81ε0μ0E50
=281σZ=185×377≈0.96cm.E51
If the sea water satisfies the inequality σ<<εω, of poor conductor, which require
f=ω2π>>σ2πε=109HzE52
Therefore at 109Hz or λ<<30cm, sea water behave as poor conductor. On the other hand at the radio frequency range f<<109 Hz, the inequality σ>>εω, can be satisfied, the skin depth δ=2/ωμσ is quite short. To reach a depth δ = 10 m, for communication with submarines,
f=ω2π=1πσμδ2≈500HzE53
The wavelength in the air is about
λ=cf=3×108500=600kmE54
The skin depth at different frequency in sea water are 277 m at 1 Hz, 8.76 m at 1KHz, 0.277 m at 1 MHz and 0.015 at 1GHz if the conductivity of sea-water is taken to about σ=3/Ωm and εr=80. These effects leads to severe restrictions for radio communication with submerged submarines. To overcome this, the communication must be performed with extremely low frequency waves generated by gigantic antennas [47].
9.1 Short wave communications
At 60 km to 100 km height from the earth, ionosphere plasma has a typical density of 1013/m3, which gives the plasma frequency of order 28 MHz. the waves below this frequency shows reflections from the layer of ionosphere to reach the receiver’s end. The conductivity of the earth is 10−2 S/m, Earth behave as a good conductor, if the inequality σ>>εω is satisfied. In other word
f<<σ2πε=180E55
MHz, therefore below 20 MHz, the earth is good conductor.
Example: skin depth at f=60 Hz for copper.
δ=22π×60×4π×10−7×6×107=8mmE56
The frequency dependent skin-depth in Copper (σ=6.25×107/Ωm) can be expressed as d=6fHz cm. It says that the skin-depth is about 6 cm at 1 Hz and it reduced to 2 mm at 1 kHz. In other words it conclude that an oscillating electromagnetic signal of high frequency, transmits along the surface of the wire or on narrow layer of thickness of the order the skin-depth in a conductor. In the visible region (ω∼1015/s) of the spectrum, the skin depth for metals is on the order of 10A0. The skin depth is related with wavelength λ (inside conductor) as
λ=2πα=2π2ωμσE57
The phase velocityVph=ωα=ωλ2π≈2ωμσE58
Therefore for a very good conductor, the real and imaginary part of the wave vector attain the same values. In this case the amplitude of the wave decays very fast with frequency as compared to bad conductor. The phase velocity of the wave in a good conductor depends on the frequency of the electromagnetic light. Consequently, an electromagnetic wave cannot penetrate more than a few skin-depths into a conducting medium. The skin-depth is smaller at higher frequencies. This implies that high frequency waves penetrate a shorter distance into a conductor than low frequency waves.
Question: Find the skin depths for silver at a frequency of 1010 Hz.
Skin depthδ=2ωμσE59
δ=22π×1010×4π×10−7×6.25×107=6.4×10m−4mE60
Therefore, in microwave experiment, the field do not penetrate much beyond .00064 mm, so no point it’s coating making further thicker. There is no advantage to construct AC transmission lines using wires with a radius much larger than the skin depth because the current flows mainly in the outer part of the conductor.
Question: wavelength and propagation speed in copper for radio waves at 1 MHz. compare the corresponding values in air (or vacuum). μ0=4π×10−7 H/m.
The above parameters are quite different in vacuum as follow
λVacuum=cν=3×108106=300mE64
There is no advantage to construct AC transmission lines using wires with a radius much larger than the skin depth because the current flows mainly in the outer part of the conductor.
10. Complex permittivity of bread dough and depth of penetration
After baking for few minutes, the relative permittivity of bread dough at frequency 600 MHz is εcr=23.1−j11.85. Calculate the depth of penetration of microwave.
Solution: the loss tangent of bread dough is
tanδ=11.8523.1=0.513E65
The depth of penetration is given as
d≈c22πfεr\'1+tanδ2−1E66
After substituting all the parameters, we get
d≈2×3×1082π×600×106123.11+0.5132−1≈6.65cmE67
It is worthy to note that the depth of penetration decreases with frequency.
11. The AC and DC conduction in plasma
Let the collision frequency of electrons with ions and ω the frequency of the EM waves in the conductor. The equation of motion for electrons is:
mdυdt=−eE−mνυE68
Assume υ=υ0e−iωtand use ∂/∂t→−iω, we obtain
−iωmυ=−eE−mνυ→υ=−emν−iωEE69
the current density is expressed by j=−enυ
jf=−ne2mν−iωEE70
Therefore, the AC conductivity can be read as
σω=1ν−iωne2mE71
In infrared range ω<<ν∼10141/sec, so the DC conductivity
σ=ne2mvE72
can be taken.
Let us now compare the magnitude of conduction current with that of the displacement current.
Assume E=E0e−iωt. Then
jfε∂E∂t=σEεωE=σεωE73
In copper, σ=6×107s/m. The condition for jf≈ε∂E∂t, or σεω≈1 leads to
ω=σε=6×1078.85×10−12∼7×1019rad/secE74
At frequencies ω<1012rad/sec (communication wave frequency),
σεω>>1 or jf>>ε∂E∂t.
12. Electromagnetic pulse and high power microwave overview
Several nations and terrorists have a capability to use electromagnetic pulse (EMP) as a weapon to disrupt the critical infrastructures. Electromagnetic pulse is an intense and direct energy field that can interrupt sensitive electrical and electronic equipment over a very wide area, depending on power of the nuclear device and altitude of the burst. An explosion exploded at few heights in the atmosphere can produce EMP and known as high altitude EMP or HEMP. High power microwave (HPM) can be produced with the help of powerful batteries by electrical equipment that transforms battery power into intense microwaves which may be harmful electronics equipments [62, 63, 64, 65, 66, 67, 68, 69, 70, 71]. The high- power electromagnetic (HPEM) term describes a set of transient electromagnetic environments with intense electric and magnetic fields. High- power electromagnetic field may be produced by electrostatic discharge, radar system, lightning strikes, etc. The nuclear bursts can lead to the production of electromagnetic pulse which may be used against the enemy country’s military satellites. Therefore the sources derived from lasers, nuclear events are vulnerable and called laser and microwave threats. Microwave weapons do not rely on exact knowledge of the enemy system. These weapons can leave persisting and lasting effects in the enemy targets through damage and destruction of electronic circuits, components. Actually HEMP or HPM energy fields, as they instantly spread outward, may also affect nearby hospital equipment or personal medical devices, such as pacemakers. These may damage critical electronic systems throughout other parts of the surrounding civilian infrastructure. HEMP or HPM may damage to petroleum, natural gas infrastructure, transportation systems, food production, communication systems and financial systems [62, 63, 64, 65, 66, 67, 68, 69, 70, 71].
13. Generation of high - frequency instability through plasma environment
The beams of ions and electrons are a source of free energy which can be transferred to high power waves. If conditions are favorable, the resonant interaction of the waves in plasma can lead to nonlinear instabilities, in which all the waves grow faster than exponentially and attain enormously large amplitudes. These instabilities are referred to as explosive instabilities. Such instabilities could be of considerable practical interest, as these seem to offer a mechanism for rapid dissipation of coherent wave energy into thermal motion, and hence may be effective for plasma heating [72, 73]. A consistent theory of explosive instability shows that in the three-wave approximation the amplitudes of all the waves tend to infinity over a finite time called explosion time [74, 75]. In ref. [74], an explosive- generated –plasma is discovered for low and high frequency instabilities. The solution of dispersion equation is found numerically for the possibility of wave triplet and synchronism conditions. The instabilities is observed to propagate whose wave number.
14. Electron beam plasma model and theoretical calculation
Here we considers ions, electrons and negatively charged electron beam are immersed in a Hall thruster plasma channel [51, 52, 53, 54, 55]. The magnetic field is consider as Β→=Βẑ so that electrons are magnetized while ions remains un-magnetized and electrons rotates with cyclotron frequency Ω=eBme, whereas the gyro-radius for ions is larger so that they cannot rotate and simply ejects out by providing thrust to the device. The axial electric field Ε→=Εx̂ (along the x - axis) which accelerates the particles. It causes electrons have a Ε→×Β→ drift in the azimuthal direction (y-axis) whereas the movement of ions is restricted along x-axis. Similar to previous studies, here, we consider the motion of all the species i.e. for ions (density ni, massmi, velocity vi) for electrons (density ne, mass me, velocity ve), for electron beam (density nb, mass mb, velocity vb) and collision frequency for the excitation of instability. The basic fluid equations are given as follows:
∂ni∂t+∇→⋅υ→ini=0E75
mi∂∂t+υ→i.∇→υ→i=eE→E76
∂ne∂t+∇→⋅υ→ene=0E77
me∂∂t+υ→e⋅∇→+vυ→e=−eE→+υ→e×B→E78
∂nb∂t+∇→⋅υ→bnb=0E79
mb∂∂t+υ→b⋅∇→υ→b=−enbE→E80
ε0∇2φ1=ene1−ni1+nb1E81
Since the larmor radius of ions are larger than the length of the channel (6 cm), therefore ions are considered as unmagnetized in the channel and are accelerated along the axial direction of the chamber. We consider ions initial drift in the positive x – direction (υ→i0=υi0x̂) with neglecting motion in both azimuthal and radial directions [51, 52, 53, 54, 55]. Electron has motion in the x-direction (υ→b=υbx̂) since electrons are affected by magnetic field and get magnetized, we takes their E→×B→ initial drift in the y – direction (υ→e=υeŷ).
To find the oscillations by the solutions of the above equations we take the quantities varied as the Art=A0eik.r−ωt for first order perturb quantities ni1,ne1,nb1,υi1,υe1,υb1 and E→1 together with ω as a frequency of oscillations and the k is the wave propagation vector within plane of (x, y) . On remarking the magnetic fields are large enough in Hall thruster and condition Ω>>ω,kyυe0,v is satisfied [51, 52, 53, 54, 55, 56]. By solving the equation of motion and the equation of continuity for electrons, we get the perturbed density of electrons in terms of oscillating potential φ1 in the following way
ne1=ene0ω̂k2φ1meΩ2ω−kyυe0E82
Let us consider, ω̂=ω−kyυe0−iv, the cyclotron frequency Ω=eBme and k2=kx2+ky2.
Similarly, on solving equation for ions we get the ion density term as
ni1=ek2ni0φ1miω−kxυi02E83
Similarly for electron beam density given as
nb1=−ek2nb0φ1mbω−kxυb02E84
By putting these density values in the Poisson’s equations
Since the perturbed potential is not zero i.e. φ1≠0 then we get
ωpe2ω̂Ω2ω−kyυe0−ωpi2ω−kxυi02−ωpb2ω−kxυb02+1=0E87
This is the modified dispersion relation for the lower-hybrid waves under the effects of collisions and electrons beam density.
15. Analytical solutions under the limitations
Consider now waves propagating along the ŷ direction, so that kx=0, which, in real thruster geometry, corresponds to azimuthally propagating, waves. We discuss below its limiting cases through Litvak and Fisch [78].
ω<<kyυe0,E88
The solutions for the dispersion relation (57) can be obtained as follows:
ω2≈ωpi2+ωpb2Ω2Ω2+ωpe21+iνeωpe2Ω2+ωpe2kyυe0E89
Since the last terms in the second square brackets of the denominator in the right-hand side of (89) are small, we obtain the following
ω≈±Ω2ωpi2+ωpb2Ω2+ωpe21−iνeωpe22kyυe0Ω2+ωpe2E90
Finally, the growth rate γ of the resistive instability is calculated from (90) as follow
γ≈νeωpe22kyυe0Ω2+ωpe2×Ω2ωpi2+ωpb2Ω2+ωpe2E91
The corresponding real frequency ωrω≡ωr±iγ is obtained as
ωr≈Ω2ωpi2+ωpb2Ω2+ωpe2E92
The Eqs. (91) show that the growth of the high frequency instability depends on collision frequency, electron density, ion density, beam density, azimuthal wave number, initial drift and on the applied magnetic field. On the other hand, the real frequency of the wave depends only on the magnetic field, electron plasma density, ion density and beam density. By tuning these parameters one can control the frequency of the generating wave. In the below Table 2, the different parameters of a Hall thruster are given [51, 52, 53, 54, 55, 56].
Parameters
Range
Magnetic field
B0z∼100−200G
Axial Wave number
Kx ∼ 200- 600/m
Azimuthal Wave number
Ky ∼ 400-1200/m
Collisional frequency
v∼106/s
Initial drift of electron
u0∼106m/s
Initial drift of ions
υ0∼2×104−5×104m/s
Plasma density
ne0∼1018, ni0∼1018, nb0∼1017/m3
Thruster channel diameter
D ∼ 4 – 10 cm
Table 2.
Plasma parameters.
16. Results and discussion
The Eqs. (91) and (92) are solved with MATLAB by using appropriate parameters given in Table 2. We plot various figures for investigating the variation of growth rate and real frequency of the instability with magnetic field B0 and density of beam nb, initial drift, collision frequency ν and wave number. For these sets of parameters, only one dominated mode of the dispersion relation is plotted in the figures. Figure 3 shows the variation of growth rate and real frequency for different values of magnetic field. The reason for the enhanced growth rate as well as real frequency can be understood based on Lorentz force and the electron collisions. Since the electrons have their drift in the y-direction, they experience the Lorentz force due to the magnetic field in the negative of x-direction, i.e., in the direction opposite to the ions drift. The higher Lorentz force helps these transverse oscillations to grow relatively at a faster rate owing to an enhancement in the frequency. On the other hand, this is quite plausible that larger cyclotron frequency of the electrons leads to stronger effects of the collisions because of which the resistive coupling becomes more significant and hence the wave grows at its higher rate. Opposite effect of the magnetic field was observed by Alcock and Keen in case of a drift dissipative instability that occurred in afterglow plasma [76]. Similarly studied are also investigated by Sing and Malik in magnetized plasma [51, 52, 53, 54, 55, 56].
Figure 3.
Variation of growth rate and real frequency with the magnetic field.
In Figure 4, we have plotted the variation of growth rate γ and real frequency with the azimuthal wavenumber in order to examine the growth of these waves, when the oscillations are of smaller or relatively longer wavelengths. Here, the oscillations of larger wave numbers (or smaller wavelengths) are found to have lower growth. The faster decay that is observed on the larger side of k is probably due to the stronger Landau damping. The growth rate shows parabolic nature but the real frequency is almost increases linearly with respect to azimuthal wave number. It means that oscillations of smaller wavelengths are most unstable. Kapulkin et al. have theoretically observed the growth rate of instability to directly proportional to the azimuthal wavenumber [77]. Litvak and Fisch have also shown that the rate of growth of instability is inversely proportional to the azimuthal wave number [78].
Figure 4.
Variation of growth rate γ and real frequency with azimuthal wavenumber.
On the other hand, the variation of growth rate γ and real frequency with the collision frequency is depicted in Figure 5. The wave grow at faster rates in the presence of more electron collisions. This is due to the resistive coupling, which get much stronger in the presence of more collisions. In the present case, the growth rate grows at a much faster rate and real frequency is constant, and graph shows that the growth rate is directly proportional to the collision frequency. During the simulation studies of resistive instability, Fernandez et al. also observed the growth rate to be directly proportional to the square root of the collision frequency [79]. In Figure 6, we show the dependence of the growth rate on the electron drift velocity. it is observed that the growth rate is reduced in the presence of larger electron drift velocity. In this case the resistive coupling of the oscillations to the electrons’ drift would be weaker due to the enhanced velocity of the electrons. The reduced growth under the effect of stronger magnetic field is attributed to the weaker coupling of the oscillations to the electrons closed drift. The variation of growth rate γ and real frequency with beam density are shown in Figure 7. The growth shows asymmetric Gaussian type behavior but the real frequency varies linearly with beam density of electrons. This is due to the increased collisional effect with the large plasma density.
Figure 5.
Variation of growth rate γ and real frequency with collision frequency.
Figure 6.
Variation of growth rate γ and real frequency with electron drift velocity.
Figure 7.
Variation of growth rate γ and real frequency with beam density.
17. Conclusions
The present chapter discuss the properties of electromagnetic waves propagating through different media. In the first part of the chapter, the dispersion relation for the electromagnetic waves in conducting medium is derived. It has been experienced that the penetration of the electromagnetic field depend on the frequency of the source as well as the electrical properties of the medium. The significance of skin depth for biological and conducting media are explained through numerical examples. In the second part of the chapter, the generation of high frequency instability in plasma is discussed which grow with the magnetic field, wave length, collision frequency and the beam density. The growth rate linearly increases with collision frequency of electrons but it is decreases with the drift velocity of electrons. The real frequency of the instability increases with magnetic field, azimuthal wave number and beam density. The real frequency is almost independent with the collision frequency of the electrons.
Acknowledgments
The University Grants Commission (UGC), New Delhi, India is thankfully acknowledged for providing the startup Grant (No. F. 30-356/2017/BSR).
\n',keywords:"electromagnetic waves, permittivity, skin depth, loss angle, absorption, Dispersion equations, electron collisions, growth rate, Hall thruster, beam, resistive instability",chapterPDFUrl:"https://cdn.intechopen.com/pdfs/78176.pdf",chapterXML:"https://mts.intechopen.com/source/xml/78176.xml",downloadPdfUrl:"/chapter/pdf-download/78176",previewPdfUrl:"/chapter/pdf-preview/78176",totalDownloads:265,totalViews:0,totalCrossrefCites:0,totalDimensionsCites:0,totalAltmetricsMentions:0,impactScore:0,impactScorePercentile:44,impactScoreQuartile:2,hasAltmetrics:0,dateSubmitted:"June 7th 2021",dateReviewed:"June 24th 2021",datePrePublished:"August 20th 2021",datePublished:"March 16th 2022",dateFinished:"August 20th 2021",readingETA:"0",abstract:"The chapter is divided into two parts. In the first part, the chapter discusses the theory of propagation of electromagnetic waves in different media with the help of Maxwell’s equations of electromagnetic fields. The electromagnetic waves with low frequency are suitable for the communication in sea water and are illustrated with numerical examples. The underwater communication have been used for the oil (gas) field monitoring, underwater vehicles, coastline protection, oceanographic data collection, etc. The mathematical expression of penetration depth of electromagnetic waves is derived. The significance of penetration depth (skin depth) and loss angle are clarified with numerical examples. The interaction of electromagnetic waves with human tissue is also discussed. When an electric field is applied to a dielectric, the material takes a finite amount of time to polarize. The imaginary part of the permittivity is corresponds to the absorption length of radiation inside biological tissue. In the second part of the chapter, it has been shown that a high frequency wave can be generated through plasma under the presence of electron beam. The electron beam affects the oscillations of plasma and triggers the instability called as electron beam instability. In this section, we use magnetohydrodynamics theory to obtain the modified dispersion relation under the presence of electron beam with the help of the Poisson’s equation. The high frequency instability in plasma grow with the magnetic field, wave length, collision frequency and the beam density. The growth rate linearly increases with collision frequency of electrons but it is decreases with the drift velocity of electrons. The real frequency of the instability increases with magnetic field, azimuthal wave number and beam density. The real frequency is almost independent with the collision frequency of the electrons.",reviewType:"peer-reviewed",bibtexUrl:"/chapter/bibtex/78176",risUrl:"/chapter/ris/78176",book:{id:"9878",slug:"electromagnetic-wave-propagation-for-industry-and-biomedical-applications"},signatures:"Sukhmander Singh, Ashish Tyagi and Bhavna Vidhani",authors:[{id:"282807",title:"Dr.",name:"Sukhmander",middleName:null,surname:"Singh",fullName:"Sukhmander Singh",slug:"sukhmander-singh",email:"sukhmandersingh@curaj.ac.in",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/282807/images/system/282807.jpg",institution:{name:"Central University of Rajasthan",institutionURL:null,country:{name:"India"}}},{id:"421908",title:"Mr.",name:"Ashish",middleName:null,surname:"Tyagi",fullName:"Ashish Tyagi",slug:"ashish-tyagi",email:"ashish.tyagi@ss.du.ac.in",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"University of Delhi",institutionURL:null,country:{name:"India"}}},{id:"421909",title:"Mrs.",name:"Bhavna",middleName:null,surname:"Vidhani",fullName:"Bhavna Vidhani",slug:"bhavna-vidhani",email:"bhavna.vidhani@gmail.com",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",institution:{name:"University of Delhi",institutionURL:null,country:{name:"India"}}}],sections:[{id:"sec_1",title:"1. Introduction",level:"1"},{id:"sec_2",title:"2. Current status of the research",level:"1"},{id:"sec_3",title:"3. Interaction of electromagnetic wave fields with biological tissues",level:"1"},{id:"sec_4",title:"4. Complex dielectric permittivity",level:"1"},{id:"sec_5",title:"5. Propagation of EM fields (waves) in conductors",level:"1"},{id:"sec_5_2",title:"5.1 Gauss’ law for electric field",level:"2"},{id:"sec_6_2",title:"5.2 Faraday’s law",level:"2"},{id:"sec_7_2",title:"5.3 Magnetic Gauss’s law for magnetic field",level:"2"},{id:"sec_8_2",title:"5.4 Ampere’s law",level:"2"},{id:"sec_10",title:"6. Properties of plane wave (monochromatic) in vacuum",level:"1"},{id:"sec_10_2",title:"6.1 Skin depth",level:"2"},{id:"sec_12",title:"7. Alternating magnetic field in a conducting media",level:"1"},{id:"sec_12_2",title:"7.1 Phase change in fields in a conducting media",level:"2"},{id:"sec_13_2",title:"7.2 Skin depth",level:"2"},{id:"sec_15",title:"8. Wave propagation in perfect conductors",level:"1"},{id:"sec_16",title:"9. Electromagnetic wave propagation into water",level:"1"},{id:"sec_16_2",title:"9.1 Short wave communications",level:"2"},{id:"sec_18",title:"10. Complex permittivity of bread dough and depth of penetration",level:"1"},{id:"sec_19",title:"11. The AC and DC conduction in plasma",level:"1"},{id:"sec_20",title:"12. Electromagnetic pulse and high power microwave overview",level:"1"},{id:"sec_21",title:"13. Generation of high - frequency instability through plasma environment",level:"1"},{id:"sec_22",title:"14. Electron beam plasma model and theoretical calculation",level:"1"},{id:"sec_23",title:"15. Analytical solutions under the limitations",level:"1"},{id:"sec_24",title:"16. Results and discussion",level:"1"},{id:"sec_25",title:"17. Conclusions",level:"1"},{id:"sec_26",title:"Acknowledgments",level:"1"}],chapterReferences:[{id:"B1",body:'L. Liu, S. Zhou and J. Cui, “Prospects and Problems of Wireless Communication for Underwater Sensor Net-works,” Wiley WCMC Special Issue on Underwater Sen-sor Networks (Invited), 2008'},{id:"B2",body:'J. H. Goh, A. Shaw, A. I. Al-Shanmma’a, “Underwater Wireless Communication System,” Journal of Physics, Conference Series 178, 2009'},{id:"B3",body:'A. I. Al-Shamma’a, A. Shaw and S. saman, “Propagation of Electromagnetic Waves at MHz Frequencies through Seawater,” IEEE Transactions on Antennas and Propa- tion, Vol. 52, No. 11, November 2004, pp. 2843-2849'},{id:"B4",body:'S. Bogie, “Conduction and Magnetic Signaling in the Sea,” Radio Electronic Engineering, Vol. 42, No. 10, 1972, pp. 447-452. doi:10.1049/ree.1972.0076'},{id:"B5",body:'Shan Jiang, Stavros Georgakopoulos, Electromagnetic Wave Propagation into Fresh Water, Journal of Electromagnetic Analysis and Applications, 2011, 3, 261-266'},{id:"B6",body:'Habib Mazharimousavi S, Roozbeh A, Halilsoy M. Electromagnetic wave propagation through inhomogeneous material layers. Journal of Electromagnetic Waves and Applications. 2013 Nov 1;27(16):2065-74'},{id:"B7",body:'Andrey B. Matsko and Yuri V. Rostovtsev, Electromagnetic-wave propagation and amplification in overdense plasmas: Application to free electron lasers, Physical Review E, 58, 6, DECEMBER 1998'},{id:"B8",body:'P. Sprangle, E. Esarey, J. Krall, and G. Joyce, Phys. Rev. Lett. 69, 2200 ∼1992'},{id:"B9",body:'.C. Oldano, Electromagnetic-wave propagation in anisotropic stratified media, Physical Review A, 40, 10 NOVEMBER 15, 1989'},{id:"B10",body:'Hidenori Akiyama, Takashi Sakugawa, Takao Namihira, Industrial Applications of Pulsed Power Technology, IEEE Transactions on Dielectrics and Electrical Insulation Vol. 14, No. 5; October 2007, 1051-1064'},{id:"B11",body:'A. Pokryvailo, M. Wolf, Y. Yankelevich, S. Wald, L. R. Grabowski, E. M.van Veldhuizen, Wijnand R. Rutgers, M. Reiser, B. Glocker, T. Eckhardt, P. Kempenaers and A. Welleman, “High-Power Pulsed Corona for Treatmentof Pollutants in Heterogeneous Media”, IEEE Trans. Plasma Sci., Vol. 34,pp. 1731-1743, 2006'},{id:"B12",body:'G.J.J. Winands, K. Yan, A.J.M. Pemen, S.A. Nair, Z. Liu and E.J.M. vanHeesch, “An Industrial Streamer Corona Plasma System for Gas Cleaning”,IEEE Trans. Plasma Sci., Vol. 34, pp.2426-2433, 2006'},{id:"B13",body:'W. Hartmann, T. Hammer, T. Kishimoto, M. Romheld and A. Safitri, “Ozone Generation in a Wire-Plate Pulsed Corona Plasma Reactor” , 15th IEEE Pulsed Power Conf., pp. 856-859, 2005'},{id:"B14",body:'J. Choi, T. Yamaguchi, K. Yamamoto, T. Namihira, T. Sakugawa, S. Katsuki and H. Akiyama, “Feasibility Studies of EMTP Simulation for the Design of the Pulsed-Power Generator Using MPC and BPFN for Water Treatments”, IEEE Trans. Plasma Sci., Vol. 34, pp.1744-1750, 2006'},{id:"B15",body:'R.W. Bruce, R.L. Bruce, A.W. Fliflet, M. Kahn, S.H. Gold, A.K.Kinkead, D. Lewis, III and M.A. Imam, "Joining of ceramic tubes using a high-power 83-GHz Millimeter-wave beam", IEEE Trans. Plasma Sci., Vol. 33, pp. 668-678, 2005'},{id:"B16",body:'A. M. Loske, "Medical and Biomedical Applications of Shock Waves: The State of the Art and the Near Future," in 30th International Symposium on Shock Waves 1, 2017, pp. 29-34'},{id:"B17",body:'Claire M. Watts, Xianliang Liu, and Willie J. Padilla, Metamaterial Electromagnetic Wave Absorbers, Adv. Mater. 2012, 24, OP98–OP120, DOI: 10.1002/adma.201200674'},{id:"B18",body:'A. I. M. Ayala , Master of Science Thesis, Tufts University, USA, 2009 '},{id:"B19",body:'Y. Gong , Z. Li , J. Fu , Y. Chen , G. Wang , H. Lu , L. Wang , X. Liu , Opt. Exp. 2011 , 19 , 10193'},{id:"B20",body:'Z. H. Jiang , S. Yun , F. Toor , D. H.Werner , T. S. Mayer , ACS Nano 2011 , 5 , 4641 '},{id:"B21",body:'X. J. He , Y. Wang , J. M. Wang , T. L. Gui , PIER 2011 , 115 , 381'},{id:"B22",body:'E. Berry et al., Optical properties of tissue measured using terahertzpulsed imaging,” Proc. SPIE, vol. 5030, pp. 459-470, Jun. 2003'},{id:"B23",body:'A. J. Fitzgerald et al., Catalogue of human tissue optical properties at terahertz frequencies, J. Biol. Phys., vol. 29, nos. 2-3, pp. 123-128, 2003'},{id:"B24",body:'G. W. Hanson, Dyadic Green\'s functions and guided surface waves for a surface conductivity model of graphene, J. Appl. Phys., vol. 103, no. 6, pp. 064302-1--064302-8, Mar. 2008'},{id:"B25",body:'J. M. Jornet and I. F. Akyildiz, Graphene-based nano-antennas for electromagnetic nanocommunications in the terahertz band, in Proc. 4th Eur. Conf. Antennas Propag. (EUCAP), Apr. 2010, pp. 1-5'},{id:"B26",body:'T. Binzoni, A.Vogel, A. H. Gandjbakhche, and R. Marchesini, Detection limits of multi-spectral optical imaging under the skin surface, Phys. Med. Biol., vol. 53, no. 3, pp. 617-636, 2008'},{id:"B27",body:'Loske, A.M.: Medical and Biomedical Applications of Shock Waves. Shock Wave and High Pressure Phenomena. Springer International Publishing AG, Cham, Switzerland (2017). ISBN 978-3-319-47568-4'},{id:"B28",body:'Wang, C.J.: Extracorporeal shockwave therapy in musculoskeletal disorders. J. Orthop. Surg. Res. 7, 11–17 (2012)'},{id:"B29",body:'Kenmoku, T., Nobuyasu, O., Ohtori, S.: Degeneration and recovery of the neuromuscular junction after application of extracorporeal shock wave therapy. J. Orthop. Res. 30, 1660–1665 (2012)'},{id:"B30",body:'Delius, M., Hofschneider, P.H., Lauer, U., Messmer, K. Extracorporeal shock waves for gene therapy? Lancet 345, 1377 (1995)'},{id:"B31",body:'Chen ZY, Gao YM, Du M. Propagation characteristics of electromagnetic wave on multiple tissue interfaces in wireless deep implant communication. IET Microwaves, Antennas & Propagation. 2018 Jul 6;12(13):2034-40'},{id:"B32",body:'Callejon, M.A., Naranjo-Hernandez, D., Reina-Tosina, J. and Roa LM, Distributed circuit modeling of galvanic and capacitive coupling for intrabody communication’, IEEE Trans. Biomed. Eng., 2012, 59, (11), pp. 3263– 3269'},{id:"B33",body:'Seyedi M, Kibret B, Lai DT and Faulkner M. A survey on intrabody communications for body area network applications’, IEEE Trans. Biomed. Eng., 2013, 60, (8), pp. 2067– 2079'},{id:"B34",body:'Marani R, Perri AG. RFID technology for biomedical applications: State of art and future developments. i-Manager\'s Journal on Electronics Engineering. 2015 Dec 1;6(2):1'},{id:"B35",body:'A. Denisov and E. Yeatman, "Ultrasonic vs. inductive power delivery for miniature biomedical implants," in Body Sensor Networks (BSN), 2010 International Conference on, 2010, pp. 84-89: IEEE'},{id:"B36",body:'S. Ozeri and D. Shmilovitz, "Ultrasonic transcutaneous energy transfer for powering implanted devices," Ultrasonics, vol. 50, no. 6, pp. 556-566, 2010'},{id:"B37",body:'Li C, Un KF, Mak PI, Chen Y, Muñoz-Ferreras JM, Yang Z, Gómez-García R. Overview of recent development on wireless sensing circuits and systems for healthcare and biomedical applications. IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 2018 Apr 3;8(2):165-77'},{id:"B38",body:'R. Muller et al., "A minimally invasive 64-channel wireless μECoG implant," IEEE Journal of Solid-State Circuits, vol. 50, no. 1, pp. 344-359, 2015'},{id:"B39",body:'G. Papotto, F. Carrara, A. Finocchiaro, and G. Palmisano, "A 90nm CMOS 5Mb/s crystal-less RF transceiver for RF-powered WSN nodes," in Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International, 2012, pp. 452-454: IEEE'},{id:"B40",body:'Z.-P. Liang and P. C. Lauterbur, Principles of magnetic resonance imaging: a signal processing perspective. SPIE Optical Engineering Press, 2000'},{id:"B41",body:'P. Lauterbur, "Image formation by induced local interactions: examples employing nuclear magnetic resonance," 1973'},{id:"B42",body:'S. Gabriel, R. Lau, and C. Gabriel, "The dielectric properties of biological tissues: III. Parametric models for the dielectric spectrum of tissues," Physics in medicine and biology, vol. 41, no. 11, p. 2271, 1996'},{id:"B43",body:'C. Gabriel, S. Gabriel, and E. Corthout, "The dielectric properties of biological tissues: I. Literature survey," Physics in medicine and biology, vol. 41, no. 11, p. 2231, 1996'},{id:"B44",body:'S. Gabriel, R. Lau, and C. Gabriel, "The dielectric properties of biological tissues: II. Measurements in the frequency range 10 Hz to 20 GHz," Physics in medicine and biology, vol. 41, no. 11, p. 2251, 1996'},{id:"B45",body:'Johnson C C and Guy AW, Nonionizing Electromagnetic Wave Effects in Biological Materials and Systems, Proceedings of THE IEEB, VOL. 60, NO. 6, J ∼ T E(19 72)692-718'},{id:"B46",body:'C. J. Restall, P. F. Leonard, H. F. Taswell, and R. E. Holaday. IMPI Symp. (Univ. of Alberta, Edmonton, Canada, May 21-“Warming of human blood by use of microwaves,” in Summ. 4th, 23, 1969), pp. 9699'},{id:"B47",body:'Inan US, Said RK and Inan AS. Engineering electromagnetics and waves. Pearson; 2014 Mar 14'},{id:"B48",body:'David J. Griffiths Introduction to Electrodynamics. (Addison-Wesley: Upper Saddle River, 1999)'},{id:"B49",body:'Jackson, J. D. (1998). Classical Electrodynamics. New York: Wiley, 3rd edition'},{id:"B50",body:'Mallick C, Bandyopadhyay M, Kumar R. Evolution of Microwave Electric Field on Power Coupling to Plasma during Ignition Phase. InSelected Topics in Plasma Physics 2020 Jun 15. IntechOpen'},{id:"B51",body:'Tyagi J, Singh S, Malik HK, Effect of dust on tilted electrostatic resistive instability in a Hall thruster. Journal of Theoretical and Applied Physics. 2018;12: 39-43. Doi.org/10.1007/s40094-018-0278-z'},{id:"B52",body:'Singh S, Malik H K, Nishida Y. High frequency electromagnetic resistive instability in a Hall thruster under the effect of ionization. Physics of Plasmas.2013; 20: 102109 (1-7)'},{id:"B53",body:'Singh S, Malik H K. Growth of low frequency electrostatic and electromagnetic instabilities in a Hall thruster. IEEE Transactions on Plasma Science.2011; 39:1910-1918'},{id:"B54",body:'Singh S, Malik H K. Resistive instabilities in a Hall thruster under the presence of collisions and thermal motion of electrons. The Open Plasma Physics Journal. 2011; 4:16-23'},{id:"B55",body:'Malik H K and Singh S. Resistive instability in a Hall plasma discharge under ionization effect. Physics of Plasmas.2013; 20: 052115 (1-8)'},{id:"B56",body:'Singh S. Evolutions of Growing Waves in Complex Plasma Medium. In edited book Engineering Fluid Mechanics. IntechOpen, London, United Kingdom, Nov 2020'},{id:"B57",body:'Singh S. Waves and Instabilities in E X B Dusty Plasma. In the edited book Thermophysical Properties of Complex Materials. IntechOpen, London, United Kingdom, December 12th 2019'},{id:"B58",body:'Singh S. Dynamics of Rayleigh-Taylor Instability in Plasma Fluids. In the edited book Engineering Fluid Mechanics. IntechOpen, London, United Kingdom, April 15th 2020'},{id:"B59",body:'Singh S. Hall Thruster: An Electric Propulsion through Plasmas. In the edited book Plasma Science IntechOpen, London, United Kingdom, March 2nd 2020 Doi.org/10.1063/1.2823033'},{id:"B60",body:'Singh S, Kumar S, Sanjeev, Meena S K and Saini S K. Introduction to Plasma Based Propulsion System: Hall Thrusters. In the edited book Propulsion - New Perspectives and Applications" edited by Prof. Kazuo Matsuuchi, IntechOpen, London, United Kingdom, March 2021'},{id:"B61",body:'Singh S, editor. Selected Topics in Plasma Physics. BoD–Books on Demand; 2020 Nov 19'},{id:"B62",body:'Khalatpour A, Paulsen AK, Deimert C, Wasilewski ZR, Hu Q. High-power portable terahertz laser systems. Nature Photonics. 2021 Jan;15(1):16-20'},{id:"B63",body:'Wu S, Cui S. Overview of High-Power Pulsed Power Supply. InPulsed Alternators Technologies and Application 2021 (pp. 1-35). Springer, Singapore'},{id:"B64",body:'Wu S, Cui S. Electromagnetic Weapon Load of Pulsed Power Supply. InPulsed Alternators Technologies and Application 2021 (pp. 209-227). Springer, Singapore'},{id:"B65",body:'Radasky, W. A., C. E., Baum, Wik, M. W.: Introduction to the special issue on high power electromagnetics (HPEM) and intentional electromagnetic interference (IEMI) environments and test capabilities. IEEE Trans. Electromagn. Compat. 46 (2004)'},{id:"B66",body:'Sabath, F., Backstrom, M., Nordstrom, B., Serafin, D., Kaiser, A., Kerr, B., Nitsch, D.: Overview of four European high power microwave narrow band test facilities. IEEE Trans. Electromagn. Compat. 46, 329 (2004)'},{id:"B67",body:'Parfenov, Y. V., Zdoukhov, L. N., Radasky, W. A., Ianoz, M.: Conducted IEMI threats for commercial buildings. IEEE Trans. Electromagn. Compat. 46, 404 (2004)'},{id:"B68",body:'Lu X, Picard JF, Shapiro MA, Mastovsky I, Temkin RJ, Conde M, Power JG, Shao J, Wisniewski EE, Peng M, Ha G. Coherent high-power RF wakefield generation by electron bunch trains in a metamaterial structure. Applied Physics Letters. 2020 Jun 29;116(26):264102'},{id:"B69",body:'Zhang J, Zhang D, Fan Y, He J, Ge X, Zhang X, Ju J, Xun T. Progress in narrowband high-power microwave sources. Physics of Plasmas. 2020 Jan 17;27(1):010501'},{id:"B70",body:'Frank JW. Electromagnetic fields, 5G and health: what about the precautionary principle?. J Epidemiol Community Health. 2021 Jun 1;75(6):562-6'},{id:"B71",body:'Wu S, Cui S. Basic Theories of Pulsed Alternators. InPulsed Alternators Technologies and Application 2021 (pp. 37-61). Springer, Singapore'},{id:"B72",body:'Aamodt, R. E., Sloan, M. L.: Nonlinear interactions of positive and negative energy waves. Phys. Fluids 11, 2218 (1968)'},{id:"B73",body:'Wilhelmson, H., Stenflo, I., Engelmann, F.: Explosive instabilities in the well defined phase description. J. Math. Phys. 11, 1738 (1970)'},{id:"B74",body:'O.P. Malik, Sukhmander Singh, Hitendra K. Malik, A. Kumar. Low and high frequency instabilities in an explosion- generated-plasma and possibility of wave triplet. Journal of Theoretical and Applied Physics (2015) Vol. 9 Pgs.75 -80'},{id:"B75",body:'O.P. Malik, Sukhmander Singh, Hitendra K. Malik, A. Kumar. High frequency instabilities in an explosion-generated-relativistic-plasma. Journal of Theoretical and Applied Physics (2015) Vol. 9, Pgs.105-110'},{id:"B76",body:'Alcock M W & Keen B E, Phys Rev A 3, (1971) 1087'},{id:"B77",body:'Kapulkin A, Kogan A & Guelman M, Acta Astronaut, 55 (2004) 109'},{id:"B78",body:'Litvak A A & Fisch N J, Phys Plasmas, 8 (2001) 648'},{id:"B79",body:'Fernandez E, Scharfe MK, Thomas CA, Gascon N & Cappelli MA, Phys Plasmas, 15, 012102 (2008)'}],footnotes:[],contributors:[{corresp:"yes",contributorFullName:"Sukhmander Singh",address:"sukhmandersingh@curaj.ac.in",affiliation:'
Plasma Waves and Electric Propulsion Laboratory, Department of Physics, Central University of Rajasthan, India
Department of Physics and Electronics, Hansraj College, University of Delhi, India
'}],corrections:null},book:{id:"9878",type:"book",title:"Electromagnetic Wave Propagation for Industry and Biomedical Applications",subtitle:null,fullTitle:"Electromagnetic Wave Propagation for Industry and Biomedical Applications",slug:"electromagnetic-wave-propagation-for-industry-and-biomedical-applications",publishedDate:"March 16th 2022",bookSignature:"Lulu Wang",coverURL:"https://cdn.intechopen.com/books/images_new/9878.jpg",licenceType:"CC BY 3.0",editedByType:"Edited by",isbn:"978-1-83968-582-8",printIsbn:"978-1-83968-581-1",pdfIsbn:"978-1-83968-583-5",reviewType:"peer-reviewed",numberOfWosCitations:0,isAvailableForWebshopOrdering:!0,editors:[{id:"257388",title:"Distinguished Prof.",name:"Lulu",middleName:null,surname:"Wang",slug:"lulu-wang",fullName:"Lulu Wang"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"737"}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},chapters:[{id:"76338",type:"chapter",title:"Dyadic Green’s Function for Multilayered Planar, Cylindrical, and Spherical Structures with Impedance Boundary Condition",slug:"dyadic-green-s-function-for-multilayered-planar-cylindrical-and-spherical-structures-with-impedance-",totalDownloads:130,totalCrossrefCites:0,signatures:"Shiva Hayati Raad and Zahra Atlasbaf",reviewType:"peer-reviewed",authors:[{id:"18749",title:"Dr.",name:"zahra",middleName:null,surname:"atlasbaf",fullName:"zahra atlasbaf",slug:"zahra-atlasbaf"},{id:"313000",title:"Ph.D.",name:"Shiva",middleName:null,surname:"Hayati Raad",fullName:"Shiva Hayati Raad",slug:"shiva-hayati-raad"}]},{id:"76596",type:"chapter",title:"A TLM Formulation Based on Fractional Derivatives for Dispersive Cole-Cole Media",slug:"a-tlm-formulation-based-on-fractional-derivatives-for-dispersive-cole-cole-media",totalDownloads:157,totalCrossrefCites:0,signatures:"Mohammed Kanjaa, Otman El Mrabet and Mohsine Khalladi",reviewType:"peer-reviewed",authors:[{id:"335735",title:"Dr.",name:"Mohammed",middleName:null,surname:"Kanjaa",fullName:"Mohammed Kanjaa",slug:"mohammed-kanjaa"},{id:"451607",title:"Dr.",name:"Otman El Mrabet",middleName:null,surname:"El Mrabet",fullName:"Otman El Mrabet El Mrabet",slug:"otman-el-mrabet-el-mrabet"},{id:"451608",title:"Dr.",name:"Mohsine",middleName:null,surname:"Khalladi",fullName:"Mohsine Khalladi",slug:"mohsine-khalladi"}]},{id:"74643",type:"chapter",title:"Averaged No-Regret Control for an Electromagnetic Wave Equation Depending upon a Parameter with Incomplete Initial Conditions",slug:"averaged-no-regret-control-for-an-electromagnetic-wave-equation-depending-upon-a-parameter-with-inco",totalDownloads:173,totalCrossrefCites:0,signatures:"Abdelhak Hafdallah and Mouna Abdelli",reviewType:"peer-reviewed",authors:[{id:"330025",title:"Dr.",name:"Abdelhak",middleName:null,surname:"Hafdallah",fullName:"Abdelhak Hafdallah",slug:"abdelhak-hafdallah"},{id:"339881",title:"Dr.",name:"Mouna",middleName:null,surname:"Abdelli",fullName:"Mouna Abdelli",slug:"mouna-abdelli"}]},{id:"76123",type:"chapter",title:"Using Electromagnetic Properties to Identify and Design Superconducting Materials",slug:"using-electromagnetic-properties-to-identify-and-design-superconducting-materials",totalDownloads:128,totalCrossrefCites:0,signatures:"Fred Lacy",reviewType:"peer-reviewed",authors:[{id:"62715",title:"Dr.",name:"Fred",middleName:null,surname:"Lacy",fullName:"Fred Lacy",slug:"fred-lacy"}]},{id:"78176",type:"chapter",title:"Physics of Absorption and Generation of Electromagnetic Radiation",slug:"physics-of-absorption-and-generation-of-electromagnetic-radiation",totalDownloads:265,totalCrossrefCites:0,signatures:"Sukhmander Singh, Ashish Tyagi and Bhavna Vidhani",reviewType:"peer-reviewed",authors:[{id:"282807",title:"Dr.",name:"Sukhmander",middleName:null,surname:"Singh",fullName:"Sukhmander Singh",slug:"sukhmander-singh"},{id:"421908",title:"Mr.",name:"Ashish",middleName:null,surname:"Tyagi",fullName:"Ashish Tyagi",slug:"ashish-tyagi"},{id:"421909",title:"Mrs.",name:"Bhavna",middleName:null,surname:"Vidhani",fullName:"Bhavna Vidhani",slug:"bhavna-vidhani"}]},{id:"76372",type:"chapter",title:"Electromagnetism of Microwave Heating",slug:"electromagnetism-of-microwave-heating",totalDownloads:39,totalCrossrefCites:0,signatures:"Rafael Zamorano Ulloa",reviewType:"peer-reviewed",authors:[{id:"176210",title:"Dr.",name:"Rafael",middleName:null,surname:"Zamorano Ulloa",fullName:"Rafael Zamorano Ulloa",slug:"rafael-zamorano-ulloa"}]},{id:"76524",type:"chapter",title:"High-Frequency Electromagnetic Interference Diagnostics",slug:"high-frequency-electromagnetic-interference-diagnostics",totalDownloads:235,totalCrossrefCites:0,signatures:"Ling Zhang, Yuru Feng, Jun Fan and Er-Ping Li",reviewType:"peer-reviewed",authors:[{id:"331035",title:"Dr.",name:"Ling",middleName:null,surname:"Zhang",fullName:"Ling Zhang",slug:"ling-zhang"},{id:"355320",title:"Prof.",name:"Er-Ping",middleName:null,surname:"Li",fullName:"Er-Ping Li",slug:"er-ping-li"},{id:"356452",title:"Dr.",name:"Yuru",middleName:null,surname:"Feng",fullName:"Yuru Feng",slug:"yuru-feng"},{id:"356453",title:"Dr.",name:"Jun",middleName:null,surname:"Fan",fullName:"Jun Fan",slug:"jun-fan"}]},{id:"74935",type:"chapter",title:"UHF RFID in a Metallic Harsh Environment",slug:"uhf-rfid-in-a-metallic-harsh-environment",totalDownloads:236,totalCrossrefCites:0,signatures:"Renata Rampim and Ivan de Pieri Baladei",reviewType:"peer-reviewed",authors:[{id:"343131",title:"Dr.",name:"Renata",middleName:null,surname:"Rampim",fullName:"Renata Rampim",slug:"renata-rampim"},{id:"345072",title:"Dr.",name:"Ivan",middleName:null,surname:"de Pieri Baladei",fullName:"Ivan de Pieri Baladei",slug:"ivan-de-pieri-baladei"}]},{id:"74858",type:"chapter",title:"RFID Applications in Retail",slug:"rfid-applications-in-retail",totalDownloads:341,totalCrossrefCites:0,signatures:"Narges Kasiri",reviewType:"peer-reviewed",authors:[{id:"333227",title:"Associate Prof.",name:"Narges Kasiri",middleName:null,surname:"Kasiri",fullName:"Narges Kasiri Kasiri",slug:"narges-kasiri-kasiri"}]}]},relatedBooks:[{type:"book",id:"6835",title:"Computer Methods and Programs in Biomedical Signal and Image Processing",subtitle:null,isOpenForSubmission:!1,hash:"19f08ef15d97900c94dc8fb04f9afb5f",slug:"computer-methods-and-programs-in-biomedical-signal-and-image-processing",bookSignature:"Lulu Wang",coverURL:"https://cdn.intechopen.com/books/images_new/6835.jpg",editedByType:"Edited by",editors:[{id:"257388",title:"Distinguished Prof.",name:"Lulu",surname:"Wang",slug:"lulu-wang",fullName:"Lulu Wang"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"},chapters:[{id:"66433",title:"Introductory Chapter: Computational Methods in Biomedical Engineering and Biotechnology",slug:"introductory-chapter-computational-methods-in-biomedical-engineering-and-biotechnology",signatures:"Lulu Wang",authors:[{id:"257388",title:"Distinguished Prof.",name:"Lulu",middleName:null,surname:"Wang",fullName:"Lulu Wang",slug:"lulu-wang"}]},{id:"64207",title:"Adopting Microsoft Excel for Biomedical Signal and Image Processing",slug:"adopting-microsoft-excel-for-biomedical-signal-and-image-processing",signatures:"Peter Ako Larbi and Daniel Asah Larbi",authors:[{id:"258966",title:"Dr.",name:"Peter",middleName:null,surname:"Larbi",fullName:"Peter Larbi",slug:"peter-larbi"},{id:"266249",title:"Dr.",name:"Daniel",middleName:null,surname:"Larbi",fullName:"Daniel Larbi",slug:"daniel-larbi"}]},{id:"64563",title:"Reconstruction of Three-Dimensional Blood Vessel Model Using Fractal Interpolation",slug:"reconstruction-of-three-dimensional-blood-vessel-model-using-fractal-interpolation",signatures:"Hichem Guedri and Hafedh Belmabrouk",authors:[{id:"221130",title:"Dr.",name:"Hichem",middleName:null,surname:"Guedri",fullName:"Hichem Guedri",slug:"hichem-guedri"},{id:"279982",title:"Prof.",name:"Hafedh",middleName:null,surname:"Belmabrouk",fullName:"Hafedh Belmabrouk",slug:"hafedh-belmabrouk"}]},{id:"67524",title:"Alzheimer’s Disease Computer-Aided Diagnosis on Positron Emission Tomography Brain Images Using Image Processing Techniques",slug:"alzheimer-s-disease-computer-aided-diagnosis-on-positron-emission-tomography-brain-images-using-imag",signatures:"Mouloud Adel, Imene Garali, Xiaoxi Pan, Caroline Fossati, Thierry Gaidon, Julien Wojak, Salah Bourennane and Eric Guedj",authors:[{id:"232014",title:"Prof.",name:"Mouloud",middleName:null,surname:"Adel",fullName:"Mouloud Adel",slug:"mouloud-adel"}]},{id:"71069",title:"An Efficient Block-Based Algorithm for Hair Removal in Dermoscopic Images",slug:"an-efficient-block-based-algorithm-for-hair-removal-in-dermoscopic-images",signatures:"Ihab Zaqout",authors:[{id:"258385",title:"Dr.",name:"Ihab",middleName:null,surname:"Zaqout",fullName:"Ihab Zaqout",slug:"ihab-zaqout"}]},{id:"63796",title:"How to Keep the Binary Compatibility of C++ Based Objects",slug:"how-to-keep-the-binary-compatibility-of-c-based-objects",signatures:"Donguk Yu and Hong Seong Park",authors:[{id:"110782",title:"Prof.",name:"Hong Seong",middleName:null,surname:"Park",fullName:"Hong Seong Park",slug:"hong-seong-park"},{id:"253706",title:"Mr.",name:"Donguk",middleName:null,surname:"Yu",fullName:"Donguk Yu",slug:"donguk-yu"}]}]}],publishedBooks:[{type:"book",id:"166",title:"Electromagnetic Waves",subtitle:null,isOpenForSubmission:!1,hash:"6561a39a2e8aaffc6cde23ecd65cdfde",slug:"electromagnetic-waves",bookSignature:"Vitaliy Zhurbenko",coverURL:"https://cdn.intechopen.com/books/images_new/166.jpg",editedByType:"Edited by",editors:[{id:"3721",title:"Prof.",name:"Vitaliy",surname:"Zhurbenko",slug:"vitaliy-zhurbenko",fullName:"Vitaliy Zhurbenko"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"415",title:"Behaviour of Electromagnetic Waves in Different Media and Structures",subtitle:null,isOpenForSubmission:!1,hash:"8496cd6f3c63a2b4d0b69076ec095343",slug:"behavior-of-electromagnetic-waves-in-different-media-and-structures",bookSignature:"Ali Akdagli",coverURL:"https://cdn.intechopen.com/books/images_new/415.jpg",editedByType:"Edited by",editors:[{id:"76005",title:"Prof.",name:"Ali",surname:"Akdagli",slug:"ali-akdagli",fullName:"Ali Akdagli"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"2431",title:"Dielectric Material",subtitle:null,isOpenForSubmission:!1,hash:"70942e6b7ab8fb1bfa75537709d3910d",slug:"dielectric-material",bookSignature:"Marius Alexandru Silaghi",coverURL:"https://cdn.intechopen.com/books/images_new/2431.jpg",editedByType:"Edited by",editors:[{id:"128198",title:"Dr.",name:"Marius Alexandru",surname:"Silaghi",slug:"marius-alexandru-silaghi",fullName:"Marius Alexandru Silaghi"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3706",title:"Wave Propagation in Materials for Modern Applications",subtitle:null,isOpenForSubmission:!1,hash:null,slug:"wave-propagation-in-materials-for-modern-applications",bookSignature:"Andrey Petrin",coverURL:"https://cdn.intechopen.com/books/images_new/3706.jpg",editedByType:"Edited by",editors:[{id:"7760",title:"Dr.",name:"Andrey",surname:"Petrin",slug:"andrey-petrin",fullName:"Andrey Petrin"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"7617",title:"Electromagnetic Fields and Waves",subtitle:null,isOpenForSubmission:!1,hash:"d87c09ddaa95c04479ffa2579e9f16d2",slug:"electromagnetic-fields-and-waves",bookSignature:"Kim Ho Yeap and Kazuhiro Hirasawa",coverURL:"https://cdn.intechopen.com/books/images_new/7617.jpg",editedByType:"Edited by",editors:[{id:"126825",title:"Dr.",name:"Kim Ho",surname:"Yeap",slug:"kim-ho-yeap",fullName:"Kim Ho Yeap"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}],publishedBooksByAuthor:[{type:"book",id:"8887",title:"Thermophysical Properties of Complex Materials",subtitle:null,isOpenForSubmission:!1,hash:"e8101f57488f86e3fbfa4e3a4279a4c7",slug:"thermophysical-properties-of-complex-materials",bookSignature:"Aamir Shahzad",coverURL:"https://cdn.intechopen.com/books/images_new/8887.jpg",editedByType:"Edited by",editors:[{id:"288354",title:"Dr.",name:"Aamir",surname:"Shahzad",slug:"aamir-shahzad",fullName:"Aamir Shahzad"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"8490",title:"Selected Topics in Plasma Physics",subtitle:null,isOpenForSubmission:!1,hash:"0fe936bfad77ae70ad96c46de8b7730d",slug:"selected-topics-in-plasma-physics",bookSignature:"Sukhmander Singh",coverURL:"https://cdn.intechopen.com/books/images_new/8490.jpg",editedByType:"Edited by",editors:[{id:"282807",title:"Dr.",name:"Sukhmander",surname:"Singh",slug:"sukhmander-singh",fullName:"Sukhmander Singh"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"10007",title:"Propulsion",subtitle:"New Perspectives and Applications",isOpenForSubmission:!1,hash:"042ab0c0a8270b1bacf6a8e385601863",slug:"propulsion-new-perspectives-and-applications",bookSignature:"Kazuo Matsuuchi and Hiroaki Hasegawa",coverURL:"https://cdn.intechopen.com/books/images_new/10007.jpg",editedByType:"Edited by",editors:[{id:"42387",title:"Prof.",name:"Kazuo",surname:"Matsuuchi",slug:"kazuo-matsuuchi",fullName:"Kazuo Matsuuchi"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"9878",title:"Electromagnetic Wave Propagation for Industry and Biomedical Applications",subtitle:null,isOpenForSubmission:!1,hash:"e57ef4b5bada0d966637cd303d76278f",slug:"electromagnetic-wave-propagation-for-industry-and-biomedical-applications",bookSignature:"Lulu Wang",coverURL:"https://cdn.intechopen.com/books/images_new/9878.jpg",editedByType:"Edited by",editors:[{id:"257388",title:"Distinguished Prof.",name:"Lulu",surname:"Wang",slug:"lulu-wang",fullName:"Lulu Wang"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"10921",title:"Plasma Science and Technology",subtitle:null,isOpenForSubmission:!1,hash:"c45670ef4b081fd9eebaf911b2b4627b",slug:"plasma-science-and-technology",bookSignature:"Aamir Shahzad",coverURL:"https://cdn.intechopen.com/books/images_new/10921.jpg",editedByType:"Edited by",editors:[{id:"288354",title:"Dr.",name:"Aamir",surname:"Shahzad",slug:"aamir-shahzad",fullName:"Aamir Shahzad"}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}]},onlineFirst:{chapter:{type:"chapter",id:"76801",title:"Functional Capabilities of Coupled Memristor-Based Reactance-Less Oscillators",doi:"10.5772/intechopen.97808",slug:"functional-capabilities-of-coupled-memristor-based-reactance-less-oscillators",body:'
1. Introduction
The simplicity of the design of memristor based circuits and the possibility of manufacturing memristors [1, 2, 3] using integrated technology make them promising for use in a variety of information storage and processing systems. The construction of neuromorphic systems [4, 5, 6, 7, 8] is one of the most important memristor applications where the memristors provide the function of nonvolatile analog memory.
Due to memristor capabilities the wide implementation of memristors is predicted in different circuit application spheres including analog circuits. The properties of memristors [3, 9] open up new possibilities of constructing the memristor based oscillators (MBO) of different types [10, 11, 12, 13, 14]. The complex behavior of MBOs is analyzed in some papers (see for instance [15, 16, 17, 18]). The inertial property of memristors provides the elimination from oscillator circuits the reactive elements (inductors and capacitors) which are poorly compatible with the requirements of the integrated implementation of neuromorphic systems. By the present time the various types of reactance-less MBO have been proposed [19, 20, 21, 22, 23, 24, 25, 26, 27, 28]. This class of oscillators is considered below in the paper.
The neuromorphic systems including artificial neurons (AN) and networks become promising area where the analog memory plays the important role [29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39]. The memory elements are located between neurons and provide restructuring the coupling weight coefficients. Memristors are well suited to the requirements for artificial synapses [9, 40, 41]. The memristor resistance determines the value of the weight coefficients. The change in resistance under the action of current determines the possibility of restructuring the connections.
However, it should be noted that the properties of memristors allow them to be used not only as synaptic elements but also in the artificial neurons themselves. It can be mentioned that the reactance-less MBO consisting of memristor device and an active element, for instance comparator, can be also considered as simple AN model. Such an oscillator element can be inhibited or excited similarly to AN behavior. Its state can be specified by the phase of periodic oscillation.
Advanced AN models [8] that more accurately describe the behavior of biological neurons have high complexity to represent essentially more complex and various dynamical processes. The response of oscillatory AN to the input excitation involves not only changing the state but also changing the character of generation of output pulse train. In this case the number of the pulses and position of the pulses in pulse train depend on input amplitude and transient prehistory.
The complex mathematical model is required to represent such a behavior. This is usually achieved by increasing the order of the model. The complexity of circuits of corresponding oscillatory AN is also must be increased [42, 43] and strict requirements for the precision of circuit parameters must be met.
We present the alternative approach in this paper. We demonstrate that coupled memristor-based reactance-less oscillators have the set of modes with dynamical processes that is enough to provide the desired complex behavior. To support these capabilities at circuit level the approach to MBO construction is presented that based on controlling the comparator threshold. Some advantages of this approach are demonstrated.
Among the advantages of controlling threshold approach in MBO it is essential to point out the opportunity to construct piecewise constant (PWC) oscillators. Recently AN models based on piecewise constant (PWC) oscillators have appeared [44, 45, 46]. Such AN models are convenient in practice. PWC oscillators are the oscillators with mathematical models which are systems of ordinary differential equations (ODE) with piecewise constant coefficients. The signals generated by AN in this case are piecewise linear functions of time. PWC oscillators are developed on the base of standard electronic components including amplifiers, logic gates, resistors, capacitors. The transient processes occur in these circuits under constant excitation, for example the charge or discharge of the capacitor at constant current. The analysis of AN behavior of such type and networks based on them is given in papers [47, 48]. The nonlinearity of the memristor characteristics due to the change in its resistance when current flows through device limits the development of PWC memristor based oscillators [49, 50]. Application of the considered approach to control threshold in MBO avoids this restriction because it provides use only changing the sign of the current through the memristor while generation process.
Application in binary oscillator networks is other important capability of the considered coupled reactance-less MBOs. Oscillatory neural networks are promising candidates for solving a number of complex computational problems [51, 52, 53, 54, 55]. The most suitable circuit elements for such networks are binary generators with binary output signals [56, 57, 58]. In binary oscillator networks (BON) binary signals are exchanged and information is represented by binary streams. The considered coupled reactance-less MBOs can be applied as elementary binary oscillators.
The rest of the paper is organized as follows. Section 2 presents the principle of controlling thresholds in MBO circuits. The circuit version of coupled MBOs with positive couplings and its functionalities are discussed in Section 3. In Section 4 the functional capabilities of coupled MBOs with inverting connections are given. The main properties of coupled MBO for use in binary generator networks are considered in Section 5. The technique of using phase planes to analyze the behavior of MBOs is widely used in sections.
2. Foundation: the principle of controlling threshold parameters in memristor based oscillator circuits
2.1 Operating principles of reactance-less memristor based oscillators
Oscillators without inductors and capacitors are the result of the memristor features applying. The self-excitation conditions are provided by the inertia of the resistance change of memristors when current flows through memristors devices. The absence of reactive elements allows to minimize the size of memristor based oscillators (MBO). The requirements to oscillator-based computing are met, in particular, by various variants of MBOs that differ in the number of memristor devices and the techniques of their coupling.
The schematic of typical reactance-less MBO is shown in Figure 1a. The circuit consists of memristor device М and a two-threshold comparator (TTC) with a current generator. The comparator converts the voltage v on the memristor to a binary output signal vout (Figure 1b). The current generator converts the output binary signal (“0” and “1”) of vout to opposite corresponding currents iv(-I and +I). The current input iin is conventional input for reactance-less MBO. The memristor is connected to the input of the comparator by anode.
Figure 1.
Typical illustrative graphs of behavior of reactance-less memristor based oscillator: (a) schematic of memristor based oscillator), (b) transfer function of comparator, (c) input function of comparator with current source, (d) waveforms of varying memristor resistor, (e) hysteresis loop for memristor resistor at phase plan.
The memristor resistance R is decreased at a positive voltage v at anode when a positive current i flows in. The transfer function of the comparator is shown in Figure 1b. The comparator output voltage is “0” at –VM<v<Vm and it is equal to “1” otherwise. Here VM>Vm. The current generator in the negative feedback circuit of the comparator converts the binary output signal (“0”, “1”) into a negative current and a positive current through the memristor (−I,+I), respectively (Figure 1c). The input current iin is summed with the current iv.
The memristor resistance can be considered as characteristic of oscillator state. Typical graph of varying memristor resistance in self-excitation mode of oscillator is given in Figure 1d. The phase plan (Figure 1e) illustrates the cycle of change of the memristor resistance R while oscillations as hysteresis loop.
Let us consider the cycle of periodic self-excitation mode of memristor oscillator (Figure 1a). Let’s assume that for the initial moment of time t0 the voltage value v is v>Vm (Figure 1c). In this case the current is positive i=I and vout="1". Therefore, the memristor resistance R and the memristor voltage are reduced. At time t1 the voltage reaches the threshold value v=Vm, the output voltage vout goes from state “1” to state “0”. The value of memristor resistance is Rm=Vm/I at this time point. Here Rm is lower threshold value of the memristor resistance. In this case current i and voltage v become negative: i=−I and =−Vm . The memristor resistance begin to increase, this leads to decreasing the negative voltage on the memristor. At time t2 it reaches the value v=−VM, the output of the comparator goes from “0” to “1”, the current and voltage on the memristor become positive again: i=I,v=VM . At this time point, the resistance of the memristor achieves the value RM=VM/I where RM is upper threshold resistance value. To provide periodicity of this process the following conditions must be satisfied
RON<Rm=VmI<VMI=RM<ROFF.E1
Here RON - is the minimal memristor resistance, ROFF – is the maximal memristor resistance. In this case, the memristor resistance will periodically change in the range from the lower threshold value Rm to the upper threshold resistance RM (Figure 1d). The change in resistance is triangular if the rate of change in the memristor resistance does not depend on its value. The rate of change is proportional to the current according to the drift-diffusion model approximation [3].
The input current impacts on the speed of memristor resistance change. The speed is increased at the same signs of the input current and the generator current and it is decreased in opposite case.
2.2 Introducing the control of threshold parameters in memristor based oscillator circuits
Standard control approach in memristor based oscillators (MBO) is the exploitation of input signal to control the rate of change in the state of the memristor.
In contrast from this, the main idea of considered controlling approach is to send the input signal not directly to the memristor device but to the comparator circuit and as result to control oscillator circuit behavior by change of interval of memristor resistor variation.
The possible schematic of memristor based oscillator with controlled threshold parameters [50] is given in Figure 2. This oscillator element provides the desired functionalities.
Figure 2.
Schematic of memristor based oscillator with controlled threshold parameters. The oscillator circuit contains memristor М, two-threshold comparator (TTC), summing elements, attenuator k (Vr=kVIN), current source IM., logical element NAND.
The purpose is to change the comparator thresholds using the input voltage VIN and to control the boundaries of range of memristor resistance variation by input voltage. In this case input voltage VINt, limited by the region VOUTt≥VINt≥0, shifts the range of Rt change:
Rm−rt≤Rt≤RM−rt.E2
Here rt=Vrt/I is conditional resistance. In order to avoid exceeding the limits of the range of changes in the memristor resistance, the following inequalities are supported:
rt<Rm−RONandrt<ROFF−RME3
The original comparator thresholds Vm and VM are converted into active thresholds in this case.
It can be mentioned that the state of the MBO can be characterized by phase. The phase is determined by the values of two variables: Rt and signdR/dt.
The fundamental difference between the proposed control approach and the conventional approach is following: the change of the memristor state does not depend on the time of the drive signal arrival under standard control and the state change depends on the time of arrival of the drive signal for proposed approach.
The different character of impact of driving pulses on MBO behavior is shown in Figure 3. The input current iin impacts on the rate of change in the memristor resistance (Figure 3a). In this case the speed increases at the same signs of the input current and oscillator current and it decreases otherwise. The input voltage VIN is applied to the comparator to change its thresholds and to determine the range of resistance changes (Figure 3b).
Figure 3.
The different character of impact of driving pulses on varying memristor resistance R(t): (a) excitation by input current iin, (b). excitation by input voltage vin to control thresholds.
The input current signal iin is integrated. Its effect on the waveforms depends on the duration of the signal and on the phase of the process, in other words on the sign of the resistance change. The long current pulses slow down or accelerate the transient process but short current pulses do not impact on the resistance value.
The input signal VIN applied to the input of the comparator directly before reaching the threshold can affect the switching process even with a small value of the coefficient k. At other times the comparator sensitivity to the input signals is reduced. This is illustrated in Figure 3b. The long-time pulses applied to the comparator input do not affect the trajectory R(t). But even a short positive pulse before reaching the upper threshold resistance RM leads to a decrease in the switching threshold and to earlier start of reducing memristor resistance. Similarly, a short negative pulse before reaching the lower threshold resistance Rm leads to an increase in the lower switching threshold. This leads to beginning of growth of the memristor resistance.
2.3 Applicability of memristor based oscillator circuits with control of thresholds in oscillator networks
The pointed out features of two considered approaches to control MBOs predefine their exploitation in oscillator networks. The current inputs are more suitable for controlling the state of network elements by external signals. The voltage inputs with control of thresholds should be used to organize interaction of network elements with each other including synchronization mode of oscillators.
Then we will limit ourselves to the consideration of MBOs with voltage inputs and corresponding control of thresholds. Such an oscillator element can be considered as binary element with the binary input vin (Figure 4).
Figure 4.
Binary MBO element (a) and hysteresis loop for MBO resistor (b) at phase plan taking into account threshold shift.
The current is positive and the memristor resistance decreases at the output signal vout="1", until the resistance reaches the lower threshold Rm−r = Rm−kvin/I. At output signal “0” (vout="0") the current through the memristor is negative, its resistance increases until it achieves the upper threshold RM−r = RM−kvin/I .
Thus, input state vin="1" slows down the exit from the state vout="1", and accelerates the exit from the state vout="0".
It can be mentioned that considered MBOs with voltage control of thresholds are well suitable for synchronization mode of coupled oscillators due to high sensitivity to external input and fast transient to synchronization steady state.
2.4 Model equations
The linear drift model [3] can be applied to describe the behavior of the memristor device. This model involves “instant” voltage–current characteristic for the instantaneous value of resistance
v=R·iE4
and control characteristic given by differential equation:
dRdt=−μROFF−RONROND2i=−γi,E5
The model has the following parameters: the high memristor resistor value ROFF, the low memristor resistor value RON, ion mobility μ, the semiconductor film thickness D, γ-is inertial parameter. These parameters have the following typical values:
ROFF = 10 kОhm, RON = 1 kОhm, μ = 10−14 m2 s−1 V−1, D = 10 nm [3], γ = 109 V A−2 s−1.
The switching time of the memristor device under constant current I can be estimated as
TR=ROFF−RONγI≈ROFFγI,E6
This time is 100 ms for current value 100 μA.
To describe the behavior of oscillator with comparator it is convenient to exploit the dimensionless parameters and variables. The dimensionless time is also applied. Such dimensionless variables can be obtained by normalizing. The normalization of resistances is performed using division by ROFF, respectively for voltages division by I·ROFF is applied and for time - division by TR. As a result we have ROFF=1, RON=0.1and γ =1.
Taking into account the threshold shift the comparator model with current generator i=iv (Figure 1a) is described by the equations
Taking into account the binary variables the equations Eqs. (4), (5), and (7) can be transformed to single piecewise constant equation with respect to the variable R
where rt=kvint/I –as mentioned above, variable that reflects the change in the threshold under the influence of external signal. To save the oscillation conditions the following restrictions for rt must be satisfied:
ROFF>RM+rt,RM−rt>Rm+rt,Rm−rt>RONE9
The solution of equation Eq. (8) has character of triangular oscillations in the rangeRm−r<Rt<RM−r .
2.5 Features of reactance-less memristor based oscillators in low frequency applications
The model equation Eq. (5) describes an important feature of memristors - the property of inertia. Due to this property it is possible to construct the reactance-less oscillators or in other words oscillators without inductors and capacitors. In this case the charge and discharge of reactive components in conventional oscillators is replaced by changing the memristor resistance (Eq. (5)). The duration of these processes is determined by the inertial parameter γ. The typical times of switching of the memristor devices are determined by Eq. (6). Thus, typical current value 100 μA corresponds to oscillator frequency 10 Hz.
The prospects of application of such oscillators are associated primarily with the development of low-power low-frequency oscillator circuits for neuromorphic systems and biomedical equipment.
The low-frequency operation range is the main application area of memristor oscillators [21]. Low frequency oscillators are important for many applications but their design is connected with significant difficulties due to the large values of capacitors required for low oscillation frequencies [59]. Since the frequency of operation of conventional RC relaxation oscillators is inversely proportional to the time constant, τ = R × C, low-frequency operation requires high capacitance [21]. In this case the typical capacitance value may exceed 1 μF, capacitor occupies an area of more than mm2. Such an area size contradicts the implementation in integrated circuits. This leads often to off-chip placement of the capacitor [21]. The special-purpose techniques are developed to overcome this problem and to avoid the use of impractically large component values [59, 60]. Thus, relatively novel technique was used to implement the oscillator on-chip, but the capacitor consumed 77.8% of the total chip area [60].
It can be mentioned that the problem is solved automatically with applying reactance-less MBOs due to very small area of memristor devices. For the considered MBO circuits of type (Figure 2) the size of area is determined by the area occupied by CMOS comparator.
2.6 Alternative circuitry
In this type of MBO the comparator plays the role of control circuit in switching the direction of the memristor current. It can be noted that this function can be performed by other active circuit elements.
In particular, circuit with a series connected two devices can be considered: memristor and device with negative differential resistance (NDR). This circuit can generate relaxation oscillations when the generation conditions are satisfied.
There is no need for an active load in such circuits. This is advantage of oscillator circuits based on memristor with NDR. In particular, such two-terminal devices can specified by S-shaped I-V characteristics. In this case the memristor itself can have two state given by high and low resistance values [35]. The relaxation oscillations become possible when memristor is connected to a passive two-terminal circuit. Such oscillators can be connected to each other by resistive or resistive-capacitive couplings. This type of oscillators corresponds to circuits with the current input.
Various two-terminal devices can be used as the load in oscillators based on memristors with NDR. Among them, devices with a structure similar to memristors that exploit thin layers of insulators are promising. Creation of such devices based on silicon oxides [36, 61] seems to be the most promising now. New emerging memristive technologies such as SiOx-based memristors are discussed in [61]. The compatibility with standard CMOS technology provides a good perspective for the implementation of hybrid CMOS-memristive designs in various applications.
Recent results [61] demonstrate advantages of the architecture of memory cell comprising memristor and selector. It is expected that under certain conditions such an emerging device architecture can act as an oscillator.
In the following text the consideration is limited by oscillator circuits based on memristor devices [3], although the results presented below for coupled oscillator elements can be extended to above mentioned circuit architecture.
3. Behavior of coupled memristor based oscillators with positive couplings
3.1 Operating principles
The analysis of behavior of two coupled identical MBO with positive connection is presented below.
This circuit is shown in Figure 5. It contains MBO1, MBO2, an adder at the input and a phase detector at the output [50]. To provide an external control the excitation signal VC is transmitted using an adder at the input. The phase detector at the output is used to identify the synchronization mode of coupled oscillators. If there is no synchronization between the oscillator stages MBO1 and MBO2 then output signal Vs=1 and Vs=0 if there is synchronization.
Figure 5.
Schematic of coupled memristor based oscillators (MBOs).
The coupling strengths between the MBOs specified by coefficient k impact on the behavior of this system significantly.
The rates of change of memristor resistances R1 and R2 are equal in modulus for identical MBOs. But these rates may differ in signs. By such a way the variables R1 and R2 and the signs of derivatives dR1/dt and dR2/dt can be considered as system states and may specify the behavior of system of two coupled oscillators.
The phase plane with axes R1 and R2 (Figure 6) can be exploited for analysis of different behavior versions of such a system. The analysis is based on model Eq. (8). In this case, the trajectories of moving the image points are straight lines. They pass at angles of ± π/4 on phase plane. Four trajectories can pass through each point of phase plane. The sign of dR/dt defines one from them.
Figure 6.
The boundaries and trajectories at phase plane of changing the variables R1 and R2 for coupled MBOs: solid lines – boundaries for case dR1/dt=dR2/dt, dash-dotted lines - boundaries for case dR1/dt≠dR2/dt, solid lines with arrows - the trajectories of R1 and R2 with different initial conditions. The areas of stable trajectories are limited by dashed lines.
The boundaries of the area of trajectories movement are specified by the threshold resistances. When the trajectory reaches the boundary the sign of the derivative dR/dt changes and trajectory is mirrored from the boundary. The boundaries can shift themselves at this time point.
If the external excitations are absent then the threshold of each MBO depends on positive pulse from the neighboring MBO. In particular the lower limit of the resistance of each MBO is reduced to Rm−r . As a result the area of the allowable system states on the phase plane in self-oscillating mode is determined by the square with vertices RMRM and Rm−rRm−r (Figure 6). The area of stationary trajectories is located insight this square. This area is limited by the dashed lines in Figure 6.
For the existence of a stationary trajectory, the following necessary and sufficient conditions must be met: the image points must be located in the area indicated above, and the signs of the derivatives must be identical.
If the variables are located at the main diagonal in this area and the specified conditions are met, then the variables reach the threshold simultaneously (dotted line A in Figure 6). Their moving directions also change simultaneously. They continue to move along the main diagonal. When the threshold line is reached by one variable on the other lines parallel to the main diagonal in this area, the sign of its derivative changes. This is followed by the threshold change for another variable with a corresponding change in the sign of its derivative. The trajectory is saved, but the movement along it occurs in the opposite direction. Note that the phases of the oscillations of the resistors are the same (Vs=0) for stable trajectories.
If the starting points of trajectories are located outside area of stationary trajectories (Figure 6) then such trajectories are reflected after reaching the boundaries. If in this case the signs of the derivatives are the same then the segments of the trajectories tend to the stability region. The reflection character is defined by the boundaries with different signs of derivatives dR1/dt≠dR2/dt (dashed lines in Figure 6). Any trajectory ends in the region of stable trajectories in result. Such behavior is illustrated in Figure 6 by examples of the trajectories B and C. It can be seen that the trajectory B falls into the stability region after two reflections and the trajectory C - after four reflections.
The considered circuit with two coupled identical oscillator elements (Figure 5) has a set of stable and unstable steady state trajectories. The difference between the maximal values of the variables Rs=R1max−R2max. can be exploited as characteristic of stable steady state trajectories. It can be mentioned that zero value Rs(Rs=0) corresponds to the main diagonal on phase plan (Figure 6). This characteristic reaches the value Rs=±r at the boundaries of the stable region. The each stationary trajectory (each value of Rs) corresponds to a certain period of triangular oscillations which equals to
TS=2RM−Rm+r−RSγI.E10
Let duration of the additional external control signal VC be shorter than period TS. This signal VC can change the boundary and the trajectory of movement on the phase plane respectively. Figure 6 shows the boundary U created by an external signal. The trajectory D in Figure 6 illustrates the transition to new stable trajectory under the influence of an external signal. The starting point of trajectory D is located at the main diagonal. The trajectory D moves away from the main diagonal under the external excitation. After three reflections (Figure 6) the transition of image point to new stable trajectory is carried out.
3.2 Features
It can be mentioned that for considered coupled MBOs the movement along the trajectory in the direction opposite to the original one can be provided by changing the signs of the derivatives. This property can be called as reversibility of trajectories. The property is valid for stable trajectories as well as for any unstable trajectories before its transition to stable ones. Such a feature may be foundation for the management of coupled MBOs.
In order to get from the original fixed trajectory (for example A) onto given trajectory (for example D), it is enough to choose the intersection point of the predetermined path with the threshold line (R2=Rm) and then to construct the trajectory of leaving it until the inevitable intersection with the original trajectory using change in derivative sign. The control signal with short duration and sufficient amplitude moves the image point to the specified trajectory.
The process of transition to stationary trajectory can be represented using the mapping function of the value RS over the period: RSn+1=PRSn (Figure 7). The value of RS for the n-th period is given in Figure 7 at the abscissa axis and similar value as a result of Poincare mapping for n+1 period is shown at the ordinate axis. The area of stable states belonging to the diagonal D (Figure 7) satisfies the condition: −r<Rs<r, that corresponds to the area of stationary trajectories.
Figure 7.
The function of mapping the difference in the states of