Open access peer-reviewed chapter

Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode

By Sabah M. Thahab

Submitted: May 17th 2011Reviewed: September 8th 2011Published: April 25th 2012

DOI: 10.5772/35945

Downloaded: 3654

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Sabah M. Thahab (April 25th 2012). Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode, Semiconductor Laser Diode Technology and Applications, Dnyaneshwar Shaligram Patil, IntechOpen, DOI: 10.5772/35945. Available from:

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