Stress optical coefficients cpq (in Brewster) for Li2Ge7015 at different wave lenghts.
\\n\\n
More than half of the publishers listed alongside IntechOpen (18 out of 30) are Social Science and Humanities publishers. IntechOpen is an exception to this as a leader in not only Open Access content but Open Access content across all scientific disciplines, including Physical Sciences, Engineering and Technology, Health Sciences, Life Science, and Social Sciences and Humanities.
\\n\\nOur breakdown of titles published demonstrates this with 47% PET, 31% HS, 18% LS, and 4% SSH books published.
\\n\\n“Even though ItechOpen has shown the potential of sci-tech books using an OA approach,” other publishers “have shown little interest in OA books.”
\\n\\nAdditionally, each book published by IntechOpen contains original content and research findings.
\\n\\nWe are honored to be among such prestigious publishers and we hope to continue to spearhead that growth in our quest to promote Open Access as a true pioneer in OA book publishing.
\\n\\n\\n\\n
\\n"}]',published:!0,mainMedia:{caption:"IntechOpen Maintains",originalUrl:"/media/original/113"}},components:[{type:"htmlEditorComponent",content:'
Simba Information has released its Open Access Book Publishing 2020 - 2024 report and has again identified IntechOpen as the world’s largest Open Access book publisher by title count.
\n\nSimba Information is a leading provider for market intelligence and forecasts in the media and publishing industry. The report, published every year, provides an overview and financial outlook for the global professional e-book publishing market.
\n\nIntechOpen, De Gruyter, and Frontiers are the largest OA book publishers by title count, with IntechOpen coming in at first place with 5,101 OA books published, a good 1,782 titles ahead of the nearest competitor.
\n\nSince the first Open Access Book Publishing report published in 2016, IntechOpen has held the top stop each year.
\n\n\n\nMore than half of the publishers listed alongside IntechOpen (18 out of 30) are Social Science and Humanities publishers. IntechOpen is an exception to this as a leader in not only Open Access content but Open Access content across all scientific disciplines, including Physical Sciences, Engineering and Technology, Health Sciences, Life Science, and Social Sciences and Humanities.
\n\nOur breakdown of titles published demonstrates this with 47% PET, 31% HS, 18% LS, and 4% SSH books published.
\n\n“Even though ItechOpen has shown the potential of sci-tech books using an OA approach,” other publishers “have shown little interest in OA books.”
\n\nAdditionally, each book published by IntechOpen contains original content and research findings.
\n\nWe are honored to be among such prestigious publishers and we hope to continue to spearhead that growth in our quest to promote Open Access as a true pioneer in OA book publishing.
\n\n\n\n
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This coined terminology covers a myriad of gel-based separation approaches that rely mainly on fractionating biomolecules under electrophoretic current based mainly on the molecular weight. In this book, the authors try to present simplified fundamentals of gel-based separation together with exemplarily applications of this versatile technique. 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He has expertise in shotgun proteomics analysis, reversed-phase chromatography and label-free comparative proteomics\napproaches. Dr. Magdeldin has published outstanding articles on aquaporin research using proteomics technology. He also created the outstanding “All and\nNone” methodology for analyzing large-throughput proteomics data published\nin a highly respected proteomics journal. He currently serves as a guest editor,\nassociate editor and peer reviewer for several international journals. Dr. Magdeldin received several grants and awards, such as the national encouraging prize,\n8th HUPO congress young investigator award, JSN award, grant-in-aid for young\nscientists and young researcher overseas grant from the Japan Society for the\nPromotion of Science (JSPS).",institutionString:null,position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"2",totalChapterViews:"0",totalEditedBooks:"5",institution:{name:"Niigata University",institutionURL:null,country:{name:"Japan"}}}],equalEditorOne:null,equalEditorTwo:null,equalEditorThree:null,coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"410",title:"Biotechnology",slug:"biochemistry-genetics-and-molecular-biology-microbiology-biotechnology"}],chapters:[{id:"35087",title:"Introduction to Agarose and Polyacrylamide Gel Electrophoresis Matrices with Respect to Their Detection Sensitivities",doi:"10.5772/38573",slug:"introduction-to-agarose-and-polyacrylamide-gel-electrophoresis-matrices-with-respect-to-their-detect",totalDownloads:32591,totalCrossrefCites:12,totalDimensionsCites:22,hasAltmetrics:0,abstract:null,signatures:"Patricia Barril and Silvia Nates",downloadPdfUrl:"/chapter/pdf-download/35087",previewPdfUrl:"/chapter/pdf-preview/35087",authors:[{id:"118087",title:"Dr.",name:"Silvia",surname:"Nates",slug:"silvia-nates",fullName:"Silvia Nates"},{id:"118134",title:"Dr.",name:"Patricia",surname:"Barril",slug:"patricia-barril",fullName:"Patricia Barril"}],corrections:null},{id:"35088",title:"Gel-Electrophoresis and Its Applications",doi:"10.5772/38479",slug:"gel-electrophoresis-and-its-applications",totalDownloads:17745,totalCrossrefCites:2,totalDimensionsCites:5,hasAltmetrics:0,abstract:null,signatures:"Pulimamidi Rabindra Reddy and Nomula Raju",downloadPdfUrl:"/chapter/pdf-download/35088",previewPdfUrl:"/chapter/pdf-preview/35088",authors:[{id:"117476",title:"Prof.",name:"Rabindra",surname:"Reddy",slug:"rabindra-reddy",fullName:"Rabindra Reddy"},{id:"118369",title:"Mr.",name:"Raju",surname:"Nomula",slug:"raju-nomula",fullName:"Raju Nomula"}],corrections:null},{id:"35089",title:"Principles of Nucleic Acid Separation by Agarose Gel Electrophoresis",doi:"10.5772/38654",slug:"principles-of-nucleic-acid-separation-by-agarose-gel-electrophoresis",totalDownloads:35990,totalCrossrefCites:6,totalDimensionsCites:13,hasAltmetrics:1,abstract:null,signatures:"Muhittin Yılmaz, Cem Ozic and İlhami Gok",downloadPdfUrl:"/chapter/pdf-download/35089",previewPdfUrl:"/chapter/pdf-preview/35089",authors:[{id:"118546",title:"Dr.",name:"Muhitdin",surname:"Yilmaz",slug:"muhitdin-yilmaz",fullName:"Muhitdin Yilmaz"},{id:"143191",title:"Dr.",name:"Cem",surname:"Ozic",slug:"cem-ozic",fullName:"Cem Ozic"},{id:"143193",title:"PhD.",name:"İlhami",surname:"Gok",slug:"ilhami-gok",fullName:"İlhami Gok"}],corrections:null},{id:"35090",title:"Discriminatory Power of Agarose Gel Electrophoresis in DNA Fragments Analysis",doi:"10.5772/36891",slug:"discriminatory-power-of-agarose-gel-electrophoresis-in-dna-fragment-analysis",totalDownloads:32499,totalCrossrefCites:1,totalDimensionsCites:4,hasAltmetrics:1,abstract:null,signatures:"Seow Ven Lee and Abdul Rani Bahaman",downloadPdfUrl:"/chapter/pdf-download/35090",previewPdfUrl:"/chapter/pdf-preview/35090",authors:[{id:"110308",title:"Dr.",name:"Seow Ven",surname:"Lee",slug:"seow-ven-lee",fullName:"Seow Ven Lee"}],corrections:null},{id:"35091",title:"Gel Electrophoresis of Proteins",doi:"10.5772/37514",slug:"gel-electrophoresis-of-proteins",totalDownloads:11076,totalCrossrefCites:2,totalDimensionsCites:5,hasAltmetrics:0,abstract:null,signatures:"Laura García-Descalzo, Eva García-López, Alberto Alcázar, Fernando Baquero and Cristina Cid",downloadPdfUrl:"/chapter/pdf-download/35091",previewPdfUrl:"/chapter/pdf-preview/35091",authors:[{id:"113044",title:"Dr.",name:"Cristina",surname:"Cid",slug:"cristina-cid",fullName:"Cristina Cid"},{id:"138425",title:"Dr.",name:"Fernando",surname:"Baquero",slug:"fernando-baquero",fullName:"Fernando Baquero"},{id:"138426",title:"Dr.",name:"Laura",surname:"Garcia-Descalzo",slug:"laura-garcia-descalzo",fullName:"Laura Garcia-Descalzo"},{id:"138427",title:"Dr.",name:"Eva",surname:"Garcia-Lopez",slug:"eva-garcia-lopez",fullName:"Eva Garcia-Lopez"},{id:"138428",title:"Dr.",name:"Alberto",surname:"Alcazar",slug:"alberto-alcazar",fullName:"Alberto Alcazar"}],corrections:null},{id:"35092",title:"Gel Electrophoresis of Protein - From Basic Science to Practical Approach",doi:"10.5772/38062",slug:"gel-electrophoresis-of-protein-from-basic-science-to-practical-approach",totalDownloads:6906,totalCrossrefCites:1,totalDimensionsCites:2,hasAltmetrics:0,abstract:null,signatures:"Gholamreza Kavoosi and Susan K. 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\r\n\tThis book aims to present the state-of-the-art results of characterization and applications of nanoclay or nano-layered silicate which are optimised-clay minerals with several enhanced properties. Adsorption, wetting, dispersing, coagulation, sedimentation, structure formation, capillary, electrokinetic, ion exchange, mechanical response, and other phenomena in nanoclay lie at the basis of a lot of geological, technological, and biological processes.
\r\n\r\n\tThe main objective of this work is to contribute to a thorough understanding of these phenomena as far as the rapid development of nanotechnologies is concerned. In addition, this book will also aim to provide a comprehensive account of the use of nanoclay as reinforcing fillers among the various nanoparticles focusing especially on polymer and biopolymer-clay nanocomposites. Furthermore, incorporating clay nanoparticles into polymers reveals improvements in mechanical, thermal, electrical, flame retardant, and gas barrier properties.
\r\n\r\n\tThis book is intended to be useful for students, faculty, and researchers interested in learning more about nanoclay and its applications in the fields of nanotechnology, biotechnology, environmental science, and industrial remediation.
",isbn:"978-1-80356-558-3",printIsbn:"978-1-80356-557-6",pdfIsbn:"978-1-80356-559-0",doi:null,price:0,priceEur:0,priceUsd:0,slug:null,numberOfPages:0,isOpenForSubmission:!1,isSalesforceBook:!1,isNomenclature:!1,hash:"b716126dd284217d47a657db8ae22ef4",bookSignature:"Dr. Walid Oueslati",publishedDate:null,coverURL:"https://cdn.intechopen.com/books/images_new/11755.jpg",keywords:"Nanoparticles and Nanomodifications, Clay Minerals, Synthesized Nanomaterials, Mechanical Properties, Organoclay, Hybrid Materials, Surface Engineering, Theoretical Calculations, Modeling, Sustainable Materials, Smart Food Packaging, Contaminants Control",numberOfDownloads:4,numberOfWosCitations:0,numberOfCrossrefCitations:0,numberOfDimensionsCitations:0,numberOfTotalCitations:0,isAvailableForWebshopOrdering:!0,dateEndFirstStepPublish:"March 11th 2022",dateEndSecondStepPublish:"May 12th 2022",dateEndThirdStepPublish:"July 11th 2022",dateEndFourthStepPublish:"September 29th 2022",dateEndFifthStepPublish:"November 28th 2022",dateConfirmationOfParticipation:null,remainingDaysToSecondStep:"3 months",secondStepPassed:!0,areRegistrationsClosed:!0,currentStepOfPublishingProcess:4,editedByType:null,kuFlag:!1,biosketch:"A pioneering researcher in crystallography, lamellar disordered material, and X-ray powder diffraction structure analysis, visiting professor for some French universities, Top reviewers in the field: Multidisciplinar in 2017 (Publons) academic editor in ACE journal.",coeditorOneBiosketch:null,coeditorTwoBiosketch:null,coeditorThreeBiosketch:null,coeditorFourBiosketch:null,coeditorFiveBiosketch:null,editors:[{id:"176192",title:"Dr.",name:"Walid",middleName:null,surname:"Oueslati",slug:"walid-oueslati",fullName:"Walid Oueslati",profilePictureURL:"https://mts.intechopen.com/storage/users/176192/images/system/176192.png",biography:"Walid OUESLATI, Ph.D, HU. is an associate professor at the faculty of science of Bizerte (Tunisia) and permanent member of resources, materials and ecosystems (LR19ES20) laboratory-University of Carthage. In the year 2008 he completed his Ph.D. At the faculty of science of Bizerte in the field of mineralogy and crystallography (condensed matter). In 2018 Walid completed the HU degree at the preparatory institute for scientific and technical studies in Tunis (which is an equivalent degree to HDR_ Habilitation à Diriger des Recherches). His research areas cover solid state physics, materials science, and experimental physics. More precisely, lamellar disordered material and X-ray powder diffraction structure analysis. At present time, his research activities are concerned mainly on preparation and structural characterization of hybrid materials, nanomaterials synthesis, the use of clays nanofillers to clay/polymer nanocomposites, phyllosilicate substrates of inorganic/organic compounds, perovskite structure, mesoporous/microporous materials.",institutionString:"University of Carthage",position:null,outsideEditionCount:0,totalCites:0,totalAuthoredChapters:"0",totalChapterViews:"0",totalEditedBooks:"0",institution:{name:"University of Carthage",institutionURL:null,country:{name:"Tunisia"}}}],coeditorOne:null,coeditorTwo:null,coeditorThree:null,coeditorFour:null,coeditorFive:null,topics:[{id:"17",title:"Nanotechnology and Nanomaterials",slug:"nanotechnology-and-nanomaterials"}],chapters:[{id:"82660",title:"Organoclay Nano-Adsorbent: Preparation, Characterization and Applications",slug:"organoclay-nano-adsorbent-preparation-characterization-and-applications",totalDownloads:4,totalCrossrefCites:0,authors:[null]}],productType:{id:"1",title:"Edited Volume",chapterContentType:"chapter",authoredCaption:"Edited by"},personalPublishingAssistant:{id:"347259",firstName:"Karmen",lastName:"Daleta",middleName:null,title:"Ms.",imageUrl:"//cdnintech.com/web/frontend/www/assets/author.svg",email:"karmen@intechopen.com",biography:null}},relatedBooks:[{type:"book",id:"5884",title:"Unraveling the Safety Profile of Nanoscale Particles and Materials",subtitle:"From Biomedical to Environmental Applications",isOpenForSubmission:!1,hash:"5e5811aa0f15ab9d8b6a235e8408875d",slug:"unraveling-the-safety-profile-of-nanoscale-particles-and-materials-from-biomedical-to-environmental-applications",bookSignature:"Andreia C. 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Venkateswarlu",coverURL:"https://cdn.intechopen.com/books/images_new/371.jpg",editedByType:"Edited by",editors:[{id:"58592",title:"Dr.",name:"Arun",surname:"Shanker",slug:"arun-shanker",fullName:"Arun Shanker"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"3092",title:"Anopheles mosquitoes",subtitle:"New insights into malaria vectors",isOpenForSubmission:!1,hash:"c9e622485316d5e296288bf24d2b0d64",slug:"anopheles-mosquitoes-new-insights-into-malaria-vectors",bookSignature:"Sylvie Manguin",coverURL:"https://cdn.intechopen.com/books/images_new/3092.jpg",editedByType:"Edited by",editors:[{id:"50017",title:"Prof.",name:"Sylvie",surname:"Manguin",slug:"sylvie-manguin",fullName:"Sylvie Manguin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}},{type:"book",id:"72",title:"Ionic Liquids",subtitle:"Theory, Properties, New Approaches",isOpenForSubmission:!1,hash:"d94ffa3cfa10505e3b1d676d46fcd3f5",slug:"ionic-liquids-theory-properties-new-approaches",bookSignature:"Alexander Kokorin",coverURL:"https://cdn.intechopen.com/books/images_new/72.jpg",editedByType:"Edited by",editors:[{id:"19816",title:"Prof.",name:"Alexander",surname:"Kokorin",slug:"alexander-kokorin",fullName:"Alexander Kokorin"}],productType:{id:"1",chapterContentType:"chapter",authoredCaption:"Edited by"}}]},chapter:{item:{type:"chapter",id:"16770",title:"Piezo-optic and Dielectric Behavior of the Ferroelectric Lithium Heptagermanate Crystals",doi:"10.5772/16425",slug:"piezo-optic-and-dielectric-behavior-of-the-ferroelectric-lithium-heptagermanate-crystals",body:'\n\t\tIt is well known that piezo-optic and electro-optic effects in crystals find wide ranging applications in laser devices. The photoelastic behavior of crystals forms a necessary prelude to study the electro-optical effect of ferroelectric crystals. Lithium heptagermanate Li2Ge7O15 (LGO) is regarded as a weak ferroelectric and its curie point Tc is 283.5K (Wada et al., 1981, 1983). Due to its intermediate behaviour between order-disorder and displacive types in a conventional grouping of ferroelectric materials LGO remains a subject of interest from both the theoretical and the application point of view. The paraelectric phase above Tc is orthorhombic \n\t\t\t\t\t
Many interesting physical properties of LGO such as birefringence (Kaminsky & HaussÜhl, 1990), elastic (HaussÜhl et al., 1980), thermal expansion (Wada & Ishibashi, 1983), dielectric susceptibility (Preu, 1982; Kudzin, 1994a, 1995b), electron paramagnetic resonance (EPR) of doped ions Mn2+ and Cr+3 (Trubitsyn et al., 1992; Bain, 1994) and photoluminescence (Bain, 1994) exhibit strong anomalies around Tc. However, the optical properties vary only to such a small degree that the transition could not be detected with the aid of a standard polarization microscope (Kaminsky & HaussÜhl, 1990). Interestingly with the help of a high resolution polarization device, Kaminsky and HaussÜhl (Kaminsky & HaussÜhl, 1990) studied the birefringence in LGO near Tc and observed anomalies at the phase transition.
\n\t\t\tThe study of piezo-optic dispersion of LGO (un-irradiated and irradiated) in the visible region of the spectrum of light at room temperature (RT=298 K) shows an optical zone/window in between 5400Å and 6200Å with an enhanced piezo-optical behavior (Bain et al., 2008). The temperature dependence of the photoelastic coefficients of the ferroelectric crystals Li2Ge7O15 (both un-irradiated and x-irradiated) in a cooling and a heating cycle between room temperature and 273K shows an interesting observation including the lowering of the Tc under uniaxial stress contrary to the increase of Tc under hydrostatic pressure and observation of thermal photoelastic hysteresis similar to dielectric behavior (Bain et al., 2009). The study of a.c. electrical impedance (Z) along the c-axis of the crystals LGO in the temperature range 283.5 K to 573 K at the frequency range 10kHz – 10,000 kHz shows a sharply decrease of the magnitude of ǀZǀ with increasing frequency and tends to zero value at about the frequency 10,000kHz.
\n\t\t\tThis chapter will include basic properties of the ferroelectric Lithium heptagermanate (Li2Ge7O15) crystals, related experimental studies on this crystal including growth of single crystals, agreement and disagreement between the results of different experimental investigations. The brief description on the theory of photoelasticity, fabrication process of the ferroelectric Li2Ge7O15 crystals, experimental methods of the photoelastic coefficients of LGO (un-irradiated and irradiated) at different wave length and temperatures around the phase transition temperature Tc and also the practical applications of the LGO crystals in the opto-electronic devices will be discussed.
\n\t\t\tSingle crystals of Li2Ge7O15 are grown in an ambient atmosphere by Czochralski method from stoichiometric melt, employing a resistance heated furnace. Stoichiometric mixture of powdered Li2CO3 and GeO2 in the ratio of 1.03 and 7.0 respectively was heated at 1100 K for 24 hours to complete the solid state reaction for the raw material for the crystal growth. The crystals were grown by rotating the seed at the rate of 50 rpm with a pulling rate of 1.2 mm/hour. The cooling rate of temperature in the process of growth was 0.8-1.2 K/hour. The crystals grown were colorless, fully transparent and of optical quality. The crystal axes were determined by x-ray and optical methods.
\n\t\t\t\tThe desired impurities such as Cr+3, Mn+2, Bi+2 and Eu+2 etc are also introduced in desired concentration by mixing the appropriate amount of the desired anion salt in the growth mixture. The crystal structure of LGO above Tc is orthorhombic (psedohexagonal) with the space group \n\t\t\t\t\t\t
If a rectangular parallelepiped with edges parallel to x[100], y[010] and z[001] axes is stressed along z-axis and observation is made along y-axis, as shown in Fig.1, then the path retardation δzy introduced per unit length due the stress introduced birefringence is given by
\n\t\t\t\twhere Δnz and Δnx are the changes in the corresponding refractive indices, (Δnz – Δnx) is the corresponding stress induced birefringence, Pzz is the stress along z-axis and Czy is a constant called the Brewster constant or the relative photoelastic coefficient. In general the Brewster constant is related to the stress optical and strain optical tensors of forth rank (Narasimhamurty, 1981) and is a measure of the stress induced (piezo-optic) birefringence. It is conveniently expressed in the unit of 10-13 cm2/dyne per cm thickness along the direction of observation is called a Brewster (Narasimhamurty, 1981).
\n\t\t\t\tA solid under a linear stress of stress-optical measurements (Pzz is the applied stress and LL is the direction of light propagation and observation).
To study the piezo-optical birefringence the experimental set up consists of a source of light (S), a lens (L) to render the rays parallel, a polarizer (P), an analyzer Polaroid (A), a Babinet compensator (B) and a detector (D), as shown in Fig.2. The P and A combination are adjusted for optimal rejection of light. The sample with stressing arrangement and a Babinet compensator are placed between P and A. A monochromator and a gas flow temperature controlling device are used to obtain the piezo-optic coefficients (Cλ) at different wavelengths and temperature. The subscript λ in the symbol Cλ denotes that the piezo-optic coefficient depends on the wavelength of light used to measure it. The experiments are carried out for different wavelengths using white light and a monochromator and the monochromatic sodium yellow light. An appropriate stress along a desired direction of the sample is applied with the help of a stressing apparatus comprising a mechanical lever and load.
\n\t\t\t\tA schematic diagram of the experimental setup for the measurement of photoelastic constants of the crystals at room temperature. Source of light (S), Lense (L), Polarizer (P), Crystals (C) under stress, Babinet Compensator (B), Analyzer (A) and Detector (D).
To start with, the Babinet compensator is calibrated and the fringe width is determined for different wavelengths of light in the visible region. The crystal specimen is placed on the stressing system so that the stress could be applied along vertical axis and observation made along horizontal axis. A load on the crystal shifts the fringe in the Babinet compensator and this shift is a measure of the piezo-optic behavior. The piezo-optic coefficients (C) are now calculated using the calibration of the Babinet compensator. The experiment is repeated for other orientations of the crystals and the results are obtained.
\n\t\t\tThe experimental procedure for the piezo-optic measurements is described in section 1.3. The polished optical quality samples worked out to dimensions
\n\t\t\t\t5.9 mm, 9.4 mm and 5.0 mm;
3.17 mm, 5.88 mm and 6.7 mm, along the crystallographic a, b and c axes respectively. The stress was applied with an effective load of ~23 kg in each case (Bain et al., 2008).
The values of C\n\t\t\t\t\t\t
Wavelenghts | \n\t\t\t\t\t\t||||||
Obs. | \n\t\t\t\t\t\t\tCpq\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4358 | \n\t\t\t\t\t\t\t4880 | \n\t\t\t\t\t\t\t5390 | \n\t\t\t\t\t\t\t5890 | \n\t\t\t\t\t\t\t6140 | \n\t\t\t\t\t\t
1 | \n\t\t\t\t\t\t\tCxy\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.024 | \n\t\t\t\t\t\t\t3.819 | \n\t\t\t\t\t\t\t3.722 | \n\t\t\t\t\t\t\t4.328 | \n\t\t\t\t\t\t\t3.677 | \n\t\t\t\t\t\t
2 | \n\t\t\t\t\t\t\tCxz\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t5.243 | \n\t\t\t\t\t\t\t4.895 | \n\t\t\t\t\t\t\t4.770 | \n\t\t\t\t\t\t\t5.552 | \n\t\t\t\t\t\t\t4.451 | \n\t\t\t\t\t\t
3 | \n\t\t\t\t\t\t\tCyx\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.084 | \n\t\t\t\t\t\t\t3.525 | \n\t\t\t\t\t\t\t3.092 | \n\t\t\t\t\t\t\t3.562 | \n\t\t\t\t\t\t\t2.913 | \n\t\t\t\t\t\t
4 | \n\t\t\t\t\t\t\tCyz\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.353 | \n\t\t\t\t\t\t\t4.118 | \n\t\t\t\t\t\t\t3.946 | \n\t\t\t\t\t\t\t4.261 | \n\t\t\t\t\t\t\t3.866 | \n\t\t\t\t\t\t
5 | \n\t\t\t\t\t\t\tCzy\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.179 | \n\t\t\t\t\t\t\t2.814 | \n\t\t\t\t\t\t\t3.177 | \n\t\t\t\t\t\t\t3.713 | \n\t\t\t\t\t\t\t3.172 | \n\t\t\t\t\t\t
6 | \n\t\t\t\t\t\t\tCzx\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t3.312 | \n\t\t\t\t\t\t\t2.991 | \n\t\t\t\t\t\t\t2.650 | \n\t\t\t\t\t\t\t4.190 | \n\t\t\t\t\t\t\t2.618 | \n\t\t\t\t\t\t
Stress optical coefficients cpq (in Brewster) for Li2Ge7015 at different wave lenghts.
To the best knowledge of the authors this behavior is unique to the LGO crystals. For the sake of convenience we denote C\n\t\t\t\t\t\t
Stress optical dispersion of Li2Ge7015 crystals with wavelength at room temperature (298 K).
\n\t\t\t\t\tFigure 4 shows the variation of Czx(
The observed peculiarity of piezo-optic behavior could be due to many factors, viz.,
\n\t\t\t\tanomalous behavior of refractive index or birefringence
anomalous ferroelastic transformation at some stage of loading
shift of absorption edge due to loading. The following have been done to identify the reasons for this peculiar behaviour.
Birefringence dispersion has been investigated in the visible region and no anomalies in its behavior has been observed. This rules out the first of the reasons mentioned. The reason due to ferroelastic behavior also is ruled out since the effect would be uniform over all the wavelengths investigated. It was not possible to investigate the effect of load on the absorption edge. Hence an indirect experiment has been performed. If there is a shift in the absorption edge due to loading the sample, the peak observed now at sodium yellow light would shift with load. No clear shift of the peak could be observed within the experimental limits. Another interesting experiment was done to identify the source of the anomaly. It is well known that Tc of LGO changes under uniaxial stress. The measurements were made near Tc under different stress (loads). Although Tc was found to shift a little with load the dispersion peak did not show any discernible shift. No particular reason could be established as to why a dispersion peak appears around sodium yellow region. Another interesting work in this direction is on Gd2(Mo04)3 — where an anomalous peak was recorded in spontaneous birefringence at 334.7 nm (Saito et al., 1994), an observation made for the first time.
\n\t\t\t\tThe variation of Czx(
It is well known that the photoelasticity in crystals arises due to change in number of oscillators, effective electric field due to strain and the polarisability of the ions. In the present case, as the wavelength approaches around 5400 Å, the ionic polarisability seems to be changing enormously. There is no optical dispersion data available on LGO. We haveconducted an experiment on transmission spectra of LGO along x, y and z-axes, which shows a strong absorption around 5400 Å. The observed anomaly in the piezo-optic dispersion may be attributed to the absorption edge falling in this region. This explanation needs further investigation in this direction. It is also known that the strain optical dispersion arises due to the shift in absorption frequencies and a change in the oscillator strength caused by the physical strain in the crystal.
\n\t\t\tThe ferroelectric single crystals Li2Ge7O15 was irradiated by x-ray for one hour and the experimental processes described in section 1.4 were repeated for the crystal (irradiated) LGO in order to understand the radiation effect on piezo-optical birefringence dispersion(Bain et al., 2008). The values of C of the crystal (irradiated) LGO thus obtained at different wavelengths are given in Table 2 and the results are plotted in Fig. 5.
\n\t\t\t\tWavelenghts | \n\t\t\t\t\t\t||||||
Obs. | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\tpq\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4358 | \n\t\t\t\t\t\t\t4880 | \n\t\t\t\t\t\t\t5390 | \n\t\t\t\t\t\t\t5890 | \n\t\t\t\t\t\t\t6140 | \n\t\t\t\t\t\t
1 | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\txy\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.08 | \n\t\t\t\t\t\t\t3.87 | \n\t\t\t\t\t\t\t3.72 | \n\t\t\t\t\t\t\t4.33 | \n\t\t\t\t\t\t\t3.73 | \n\t\t\t\t\t\t
2 | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\txz\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t5.35 | \n\t\t\t\t\t\t\t5.00 | \n\t\t\t\t\t\t\t4.88 | \n\t\t\t\t\t\t\t5.59 | \n\t\t\t\t\t\t\t4.55 | \n\t\t\t\t\t\t
3 | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\tyx\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.02 | \n\t\t\t\t\t\t\t3.47 | \n\t\t\t\t\t\t\t3.01 | \n\t\t\t\t\t\t\t3.50 | \n\t\t\t\t\t\t\t2.83 | \n\t\t\t\t\t\t
4 | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\tyz\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.39 | \n\t\t\t\t\t\t\t4.19 | \n\t\t\t\t\t\t\t4.01 | \n\t\t\t\t\t\t\t4.26 | \n\t\t\t\t\t\t\t3.90 | \n\t\t\t\t\t\t
5 | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\tzx\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t4.63 | \n\t\t\t\t\t\t\t4.46 | \n\t\t\t\t\t\t\t4.41 | \n\t\t\t\t\t\t\t4.66 | \n\t\t\t\t\t\t\t4.29 | \n\t\t\t\t\t\t
6 | \n\t\t\t\t\t\t\tC/\n\t\t\t\t\t\t\t\tzy\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t3.71 | \n\t\t\t\t\t\t\t3.26 | \n\t\t\t\t\t\t\t2.97 | \n\t\t\t\t\t\t\t3.43 | \n\t\t\t\t\t\t\t2.72 | \n\t\t\t\t\t\t
Stress Optical Coefficients Cpq (in Brewsters) for Li2Ge7015 (irradiated) at different wavelenghts.
Some interesting results are obtained in the case of irradiated crystal LGO. The peak value of C/\n\t\t\t\t\tzx has decreased about 18% and that of C/\n\t\t\t\t\tzy has increased about 25% at the wave length λ= 5890 Å. Also, it is interesting to note that the value of C6140, is less than that of C5390 for the un-irradiated and irradiated sample of LGO crystal, in tune with usual observation of piezo-optic dispersion.
\n\t\t\t\tStress optical dispersion of Li2Ge7015 crystals (un-irradiated and irradiated) with Wavelength at room temperature (298 K).
Irradiation of crystals can change physical properties of the crystals. Irradiation brings about many effects in the crystal such as creating defects, internal stress and electric fields etc. These irradiation effects in turn are supposed to affect the physical properties of the irradiated crystal as compared to un-irradiated crystal. While there was no appreciable change in the lattice parameters, a significant drop in the value of dielectric constant and tan δ was observed upon x-irradiation of ferroelectric glycine phosphate. An appreciable shift in the phase transition temperature towards the lower temperature was observed. These changes are attributed to the defects produced in it by irradiation (Vanishi & Bhat, 2005). The studies of triglycine sulphate (TGS) showed that very small doses of x-irradiation can give large changes of the ferroelectric properties. The direct evidence of domain clamping by defects was obtained from optical studies. With increasing dosage the dielectric constant peak and polarization curve broaden and move to lower temperatures. In our present studies, the x-irradiation is believed to produce internal stress and electric fields inside the crystals LGO due to defects that can change the values of piezo-optic constants (Lines & Glass, 2004).
\n\t\t\tLithium heptagermanate Li2Ge7O15 (LGO) belongs to weak ferroelectric crystals and it has a high nonlinearity of dielectric constant ε near Tc. The curie-Weiss law holds only within a narrow temperature interval close to Tc with a small value of the Curie constant. This high nonlinearity may be influenced by the external and internal electric field. The dielectric permittivity has been shown (Wada & Ishibashi, 1983) to be sensitive to sample history, so that reproducible results could be obtained only after a prolonged sample anneal at a temperature substantially above Tc. The nature of such behavior of ε is not clear.
\n\t\t\tAn attempt is made to study the dielectric permittivity ε during the phase transition. The plate-like specimens for the electrical measurements were polished and then silver electrodes were deposited. The dielectric constants were measured along the c-axis at the frequency of 1 MHz by means of a LCR meter (E7-12) in the temperature range from 298 K to 273 K (Bain, 1994; Kudzin et. al., 1994, 1995).
\n\t\t\t\tThe temperature dependence of dielectric constant ε of Li2Ge7O15:0.7%Bi crystal at 1 MHz on cooling (▲) and heating (•) process.
\n\t\t\t\t\tFigure 6 shows the dielectric constant ε of Li2Ge7O15:0.7% Bi measured on cooling and heating at 1 MHz as a function of temperature. It is found that the dielectric constant shows a sharp peak around Tc. The values at the peak are about 87 at cooling and about 50 at heating. The function ε (T) is represented after the sample heating up to 290 K during about an hour.
\n\t\t\t\tSample | \n\t\t\t\t\t\t\tεmax\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t∆εmax\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t\t∆εmax/ εmax, %\n\t\t\t\t\t\t\t | \n\t\t\t\t\t\t
LGO | \n\t\t\t\t\t\t\t74.9 | \n\t\t\t\t\t\t\t19.9 | \n\t\t\t\t\t\t\t26 | \n\t\t\t\t\t\t
LGO: 0.2%Bi | \n\t\t\t\t\t\t\t114.1 | \n\t\t\t\t\t\t\t44.1 | \n\t\t\t\t\t\t\t38 | \n\t\t\t\t\t\t
LGO: 0.3%Bi | \n\t\t\t\t\t\t\t120.18 | \n\t\t\t\t\t\t\t49.73 | \n\t\t\t\t\t\t\t41 | \n\t\t\t\t\t\t
LGO: 0.5%Bi | \n\t\t\t\t\t\t\t39.41 | \n\t\t\t\t\t\t\t9.03 | \n\t\t\t\t\t\t\t23 | \n\t\t\t\t\t\t
LGO: 0.7%Bi | \n\t\t\t\t\t\t\t87.19 | \n\t\t\t\t\t\t\t37.42 | \n\t\t\t\t\t\t\t42.9 | \n\t\t\t\t\t\t
LGO: 0.6%Eu | \n\t\t\t\t\t\t\t79.51 | \n\t\t\t\t\t\t\t27.25 | \n\t\t\t\t\t\t\t34 | \n\t\t\t\t\t\t
LGO: 0.3%Cr | \n\t\t\t\t\t\t\t9.86 | \n\t\t\t\t\t\t\t1.62 | \n\t\t\t\t\t\t\t16 | \n\t\t\t\t\t\t
The relative change of ∆εmax/ εmax for Li2Ge7O15 crystals and with different percentage of impurity ions Bi, Eu and Cr.
The Curie-Wess plot of ε of Li2Ge7O15:0.7%Bi is shown in Figure 7, taking ε0 as 7.1. It is found that the Curie-Wess law holds only within a narrow temperature region around Tc. The Curie constant is about 2.6 K above the phase transition temperature and 1.3 K below Tc. The characteristic behavior of ε appeared substantially different from the value εmax, which is obtained under the sample heating and cooling. The relative change of Δ εmax/ εmax for different percentage of impurity ions are shown in table. 3.
\n\t\t\t\tThe temperature dependence of reciprocal dielectric constant along the c-axis of Li2Ge7O15:0.7%Bi on cooling. Solid line shows ε – ε0 = C(T – Tc)-1, where ε0 = 7.1, Tc = 283.9 K and C = 2.6 K above Tc, while C = 1.3 K below Tc.
The dielectric constant ε is also measured at the frequency of 1 MHz at a constant electric field. It is observed that the value of ε at Tc decreases with the increase of constant electric field during cooling and heating the sample and it is also observed that the difference between two values of ε decreases at Tc with the increase of constant electric field. Fig.8 shows the dielectric constant ε of Li2Ge7O15:0.7%Bi measured on cooling at 1 MHz as a function of temperature for different values of constant electric field.
\n\t\t\t\tThe temperature dependence of dielectric constant ε of Li2Ge7O15:0.7%Bi at 1 MHz on cooling for different values of constant electric field.
The spontaneous polarization Ps and the coercive field Ec were studied at 50 Hz by the well known Sawyer-Tower technique. Both Ps and Ec were found to be independent of the Bismuth ion concentration in Li2Ge7O15 (within the concentration range investigated). The temperature dependence of Ps for Li2Ge7O15:0.7%Bi crystals is shown in Fig.9.
\n\t\t\t\tTemperature dependence of the spontaneous polarization Ps in Li2Ge7O15:0.7%Bi crystals.
Under heating, spontaneous polarization first falls off slowly until ~280 K, then faster, and vanishes at Tc, without revealing a noticeable discontinuity. Fig.10 displays the temperature dependence of the coercive field for Li2Ge7O15:0.7%Bi crystals. It is seen to fall off linearly under heating up to ~280 K, then faster, to vanish at Tc.
\n\t\t\t\tTemperature dependence of the coercive field Ec in Li2Ge7O15:0.7%Bi crystals.
Domain structure may influence on the dielectric permittivity by means of two mechanisms.
\n\t\t\t\tThe crystals that contain many domains are mechanically (piezoelectric) stressed. The relation between dielectric permittivity at the mechanically stressed and at the mechanically free state is given by (Nye, 1957)
Here εε\n\t\t\t\t\t\t\t3 is the dielectric permittivity at the mechanically stressed state and εσ\n\t\t\t\t\t\t\t3 is the dielectric permittivity at the mechanically free state, d33 is the piezoelectric modulus, and cE\n\t\t\t\t\t\t\t33 is the modulus of elasticity at the constant electric field. This must cause the decrease of ε in multi domain crystals. But the estimation shows that this mechanism does not allow to explain the strong difference in εmax at Tc.
The contribution to the dielectric permittivity may give displacements of 1800 domain boundary (Nakamura et al., 1984).
Crystals of LGO become multi domain near Tc during heating the sample. After heating the sample only at 1-2 K above Tc and by subsequent cooling through Tc, one obtains a very small value of Δεmax, as crystals of LGO are multi domain. So, basically it does not connect the hysteresis of dielectric permittivity with domain structure.
\n\t\t\t\tThere is another mechanism of the change of ε. Crystals of LGO have a small spontaneous polarization, which becomes apparent in the high dielectric nonlinearity. It is already known that a comparatively weak external electric field leads to the substantial decrease of εmax (Kholodenko, 1971). Experiments show (Volnyanskii et. al., 1992) that the crystals of LGO are monodomain at the temperature Tc – 10 K. The compensation of the field Ep connected with Ps may take place by the redistribution of charges inside the crystals. These space charges create an electric field inside the crystals, which compensates the field Ep. It is possible to assume that this field of space charges is comparatively stable (electret state). In such a case, the decrement of εmax in the process of heating the sample may be connected with the influence of internal field of electret. If we suppose that the effects of external and internal electric field are the same, then the field of electret is ~ 160 V/cm.
\n\t\t\t\tConsecutive heating and cooling of a sample from the temperatures 293, 289.25, 285.5 and 284.5 K shows the value of εmax to decrease successively in the cooling runs while remaining constant during heating. This supports the existence of an internal electric field in the sample during the heating process.
\n\t\t\t\tTemperature dependence of EPR lines of Li2Ge7O15:Cr+3 crystals for |M|= ½ ↔3/2, H║a, H┴c near Tc during cooling process.
The EPR (Electron Paramagnetic Resonance) spectroscopy of the transition metal ion doped crystals of LGO (Mn2+, Cr3+) has also been studied both in Paraelectric (PE) and ferroelectric (FE) phases in the temperature interval from 298 K to 279 K during cooling and heating cycles (Trubitsyn et. al., 1992; Bain, 1994). It is observed that on approaching Tc in a cooling cycle, the EPR lines are slightly shifted to the high field direction and undergo substantial broadening. At the temperature Tc ( ≈ 283.4 K), the EPR lines are splitted into two components which are shifted to the higher and lower field directions progressively as a result of cooling the sample below Tc as shown in Fig.11.
\n\t\t\t\tDuring heating cycle (i.e. approaching Tc from below), the phenomena occurred were just opposite to the above processes observed in the cooling cycle. However, the EPR line width (peak to peak ∆Hpp) for H║c, H┴a was found to decrease to about one third of its value at Tc in a heating cycle as compared to its value in the cooling cycle. The shape of the EPR resonance lines far from Tc has a dominant Lorentzian character (a Lorentzian line shape) but very near to Tc, the line shape has been described mainly by Gaussian form of distribution (a Gaussian line shape). All the peculiarities observed are attributed to the PE ↔ FE phase transition of the LGO crystals. The line width reduction near Tc is attributed to the internal space charge (electret state) effects which produce an internal electric field inside the crystals on heating process from the ferroelectric phase. This observation is similar to the dielectric hysteresis behavior of the crystals LGO near Tc.
\n\t\t\tThe temperature dependence of a.c. electrical impedance (Z) was studied along the c-axis in ferroelectric Li2Ge7O15 (LGO) single crystals in 10 kHz – 10,000 kHz frequency range by means of impedance analyzer (Agilent HP4294A) in the temperature interval from 298 K to 273 K during cooling and heating process including Tc = 283.5 K is shown in Fig 12 (Bain et. al., “in print”). A rather temperature hysteresis of impedance is observed in a cooling and heating cycle at Tc = 283.5 K. The relative change of Δ|Z|(min)/|Z|(min) at the frequencies 100 kHz – 10,000 kHz is shown in Table 4. The relative change of Δ|Z| (min)/|Z|(min) is about 26% and it remains almost constant at the frequencies 100 kHz – 10,000 kHz. Here the value of |Z|(min) = |Z|room – [|Z|Tc (on cooling)] and Δ|Z|(min) = [|Z|Tc (on heating)] – [|Z|Tc (on cooling)].
\n\t\t\t\tFrequency (kHz) | \n\t\t\t\t\t\t\t|Z|(min) ( K-Ω) | \n\t\t\t\t\t\t\tΔ|Z|(min) (K-Ω) | \n\t\t\t\t\t\t\tΔ|Z|(min)/|Z|(min), % | \n\t\t\t\t\t\t
100 | \n\t\t\t\t\t\t\t3.895 | \n\t\t\t\t\t\t\t0.97 | \n\t\t\t\t\t\t\t25.0 | \n\t\t\t\t\t\t
200 | \n\t\t\t\t\t\t\t2.275 | \n\t\t\t\t\t\t\t0.6 | \n\t\t\t\t\t\t\t26.4 | \n\t\t\t\t\t\t
500 | \n\t\t\t\t\t\t\t0.374 | \n\t\t\t\t\t\t\t0.1 | \n\t\t\t\t\t\t\t26.5 | \n\t\t\t\t\t\t
1,000 | \n\t\t\t\t\t\t\t0.229 | \n\t\t\t\t\t\t\t0.06 | \n\t\t\t\t\t\t\t26.2 | \n\t\t\t\t\t\t
10,000 | \n\t\t\t\t\t\t\t0.0224 | \n\t\t\t\t\t\t\t0.0056 | \n\t\t\t\t\t\t\t25.0 | \n\t\t\t\t\t\t
The relative change of Δ|Z|(min)/|Z|(min) for Li2Ge7O15 crystal at different frequencies.
Like Fig.12, a similar kind of hysteresis was observed in the dielectric behavior of LGO, as described in section 2.1 and the appearance of the dielectric hysteresis is attributed to the internal space charge (electret state) effects which produce an internal electric field in LGO on heating from the ferroelectric phase. It was possible to compensate the internal electric field effects in dielectric measurements by an external electric field (Kudzin et al., 1994, 1995; Bain, 1994). It is suspected that the impedance (Z) hysteresis also occurs due to similar effects.
\n\t\t\t\tThe frequency dependence of |Z| of the crystal LGO was studied in the temperature range 283.5 K to 573 K, which covers the phase transition temperature (Tc) of 283.5 K as shown in Fig.13. It is observed that the magnitude of |Z| decreases sharply with increasing of frequency and tends to zero value at about the frequency of 10,000 kHz. This may be due to the release of space charges. The curves also display single relaxation process and indicate an increase in a.c. conductivity with frequency. So, in the application point of view, LGO is suitable for conductivity even at the room temperature and frequency controlled switch.
\n\t\t\t\tThe temperature dependence of a.c. impedance (ǀZǀ) of Li2Ge7O15 at 100 kHz, 500 kHz, 1,000 kHz and 10,000 kHz on cooling(▲) and heating(•) processes.
\n\t\t\t\t\tFig.14 shows the temperature dependence of impedance |Z| of the crystal LGO at frequency range 100 kHz – 10,000 kHz. It is observed that the value of impedance |Z| decreases gradually with increasing temperature. This may be related with the space charge relaxation at low frequencies.
\n\t\t\t\tAt low temperatures the conductivity is dominated by short range hopping of charge carriers. Whereas at high temperatures, more space charges are accumulated at the electrode interfaces and grain boundaries, thus resulting in a strong space charge relaxation (Kim et al., 2002; James et al., 1999).
\n\t\t\t\tThe frequency dependence of impedance (ǀZǀ) of Li2Ge7O15 crystal at the temperature range 283.5 K to 573 K.
Temperature dependence of impedance (ǀZǀ) of Li2Ge7O15 crystal at Frequency range 100 kHz – 10,000 kHz.
The temperature dependence of the photoelastic coefficients of the ferroelectric crystals Li2Ge7O15 in a cooling and heating cycle between 298 K and 273 K was carried out with the experimental procedure described in section 1.4 (Bain et. al., 2009). A special arrangement was made to vary the temperature of the sample. The temperature was recorded with a digital temperature indicator and a thermocouple sensor in contact with the sample.
\n\t\t\tThe temperature dependence of piezo-optic coefficients Cpq of the crystals Li2Ge7O15 between 298 K and 273 K were determined and are shown in Fig. 15 and Fig. 16. The values of Cpq at 291 K and 278 K were reported in paper (Bain et.al., 1998) and it was observed that there were large changes in the values of Czy and Cyz at 278 K and 291 K as compared to other components and Czy did not show a peak in its temperature dependence between 291K and 278 K.
\n\t\t\tTemperature dependence of the piezo-optic coefficients Cxy, Cxz, Cyz and Cyx of the crystals LGO in a cooling (0) and heating (Δ) cycle.
Anomalous temperature dependence of the piezo-optic coefficients Czx andCzy of the crystals LGO in a cooling (0) and heating (Δ) cycle.
Here in contrast we observed a peak in the temperature dependence of both Czy and Czx at 279 K. The temperature dependence of Cpq are quite interesting, for example the piezo-optic coefficients Cyz, Cyx and Cxz have negative temperature derivatives but Cxy has a positive temperature derivative. In complete contrast both Czy and Czx have both positive and negative temperature derivatives at different temperature intervals between 298 K and 273 K (Table: 5). Besides a clear thermal hysteresis is observed in Czy and Czx in a complete cooling and heating cycle (Fig. 16) whereas no discernible hysteresis is observed in rest of the piezo-optic coefficients (Fig. 15). The two distinct anomalies in the temperature dependence of Czy and Czx are characterized by a valley at Tm (∼289 K) and a peak at Tc (∼279 K). Anomalous temperature dependence of Czx at different wave lengths is also shown in Fig. 17. The temperature dependence of the dielectric permittivity along the c-axis of LGO shows a sharp peak at Tc (283.5 K) and the Curie-Weiss law holds only for a narrow range of temperature (Tc ± 4 K) (Wada & Ishibashi, 1983; Kudzin et al., 1994, 1995) as shown in Fig. 6 and Fig. 7. The peak for piezo-optic coefficient is attributed to the paraelectric to ferroelectric phase transition of LGO at Tc. To check the curie-Weiss law like dependence near Tc the following relation is used.
\n\t\t\tWhere CT\n\t\t\t\tpq and C0\n\t\t\t\tpq denote the value of the corresponding piezo-optic coefficients at temperature T and 273 K respectively and Kpq is a constant. Figure 18 shows the (CT\n\t\t\t\tpq – C0\n\t\t\t\tpq)−1 vs (T−Tc) curve for Czx and Czy. It is clear from these curves that like dielectric constant the relation fits well only within a narrow range of temperature near Tc(Tc± 4 K). The solid lines denote the theoretical curves with the following values.
\n\t\t\tFurther more the magnitudes of the ratio of the temperature derivatives below and above Tm and Tc are given in Table 5 and we can see that the ratio near Tc comes out to be about 2. Therefore it satisfies the law of two for the ratio of such derivatives of quantities which are coupled with the spontaneous polarization in second order ferroelectric phase transition such as in the case of triglycine sulphate (Haussuhl & Albers, 1977) and LGO. Therefore the peak around Tc is (Kaminsky & HaussÜhl, 1990; Kudzin et al., 1994, 1995) attributed to the paraelectric to ferroelectric phase transition of LGO. The smallness of Kpq and the applicability of relation (3) above only in a narrow range of temperature suggest that LGO may be an improper ferroelectric. The law of two does not hold for the ratio at Tm (Table 5). Therefore this anomaly is not related to the spontaneous polarization.
\n\t\t\tFrom the behaviour that only Czx and Czy show anomalous it is obvious that birefringence (Δnz–Δny) and (Δnz–Δnx) show steep increase around Tc and below Tc show a (T–Tc )1
Cpq\n\t\t\t\t\t\t | \n\t\t\t\t\t\tValue of Derivative (Brewster/K) | \n\t\t\t\t\t\tTemperature Range Ratio | \n\t\t\t\t\t
Czx\n\t\t\t\t\t\t | \n\t\t\t\t\t\t0.013 -0.022 \n\t\t\t\t\t\t\t -0.090 0.181 \n\t\t\t\t\t\t\t ~0 | \n\t\t\t\t\t\t296K-289K -1.69 289K-283K \n\t\t\t\t\t\t\t 282K-279K -2.0 279K-276K \n\t\t\t\t\t\t\t 276K-273K | \n\t\t\t\t\t
Cxz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t-0.003 | \n\t\t\t\t\t\t293K-273K | \n\t\t\t\t\t
Czy\n\t\t\t\t\t\t | \n\t\t\t\t\t\t0.020 -0.015 \n\t\t\t\t\t\t\t -0.095 0.179 \n\t\t\t\t\t\t\t ~0 | \n\t\t\t\t\t\t296K-289K -0.75 289K-283K \n\t\t\t\t\t\t\t 282K-279K -1.9 279K-276K \n\t\t\t\t\t\t\t 276K-273K | \n\t\t\t\t\t
Cyz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t-0.026 | \n\t\t\t\t\t\t293K-273K | \n\t\t\t\t\t
Cxy\n\t\t\t\t\t\t | \n\t\t\t\t\t\t0.007 | \n\t\t\t\t\t\t293K-273K | \n\t\t\t\t\t
Cyz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t-0.023 | \n\t\t\t\t\t\t293K-273K | \n\t\t\t\t\t
The temperature derivative [dlnCpq/dT] of the piezo-optic coefficients of Li2Ge7O15.
Anomalous temperature dependence of piezo-optic coefficient Czx of the crystals LGO at different wave lengths in a cooling (0) and heating (Δ) cycle.
As mentioned by Lines and Glass (Lines & Glass, 2004), under an external pressure Tc of a ferroelectric phase transition may be shifted. This shift may be to the higher or the lower side of normal Tc. Wada et al. (Wada et al., 1981) studied the pressure effect on the ferroelectric phase transition in LGO through the dielectric and Raman scattering measurements and found a positive pressure coefficient dTc/dp = 14.6 K/kbar. Preu and HaussÜhl (Preu and HaussÜhl, 1982) studied the dependences of dielectric constants on hydrostatic and uniaxial pressure as well as temperature. They observed a shift of Tc at a rate of 14.02 K/kbar for the hydrostatic pressure and ∼7 K/kbar for the uniaxial pressure. In the present case the position of the peak of Czy is found to depend on the stress applied. If the peak position is believed to represent the Tc, it appears to shift to the lower side under the uniaxial stress. To see whether Tc shifts linearly with uniaxial stress similar to the earlier observations (Preu and HaussÜhl, 1982; Wada et al., 1981), we used different stresses within the elastic limits of LGO for Czx and found a linear relationship (Fig. 19). However, a negative stress coefficient dTc/dp ∼−22 K/kbar is obtained in this case which agrees only in magnitude with the hydrostatic pressure coefficient. The linear curve (Fig. 19) extrapolates to a Tc = 281.5 K in the unstressed state instead of 283.5K as determined by dielectric measurements (Wada & Ishibashi, 1983; Kudzin et al., 1994, 1995). This may be due to a non linear dependence of shift of Tc under stress near 283.5 K.
\n\t\t\tNow we turn to the anomaly around Tm. Morioka et al. (Morioka et al., 1988) proposed that there is an interaction between the soft phonon mode and a relaxational mode in the paraelectric phase in the temperature interval 300 K to Tc. The critical slowing down of the relaxational mode near Tc is expected to cause the increase of the fluctuation of the spatially homogeneous polarization and thereby the increase of the fluctuation of the hyperpolarizability with kc = 0. Wada et al. (Wada et al., 1991) measured the soft phonon mode with the help of their newly designed FR-IR spectrometer and proposed that as Tc is approached from above soft phonon mode becomes over damped and transforms to a relaxational mode.
\n\t\t\tPlots of (CT\n\t\t\t\t\t\tpq – Co\n\t\t\t\t\t\tpq )-1 vs (T-Tc) curve for Czx and Czy.
On the other hand there may exist a relaxational mode with an independent degree of freedom as well as the soft phonon mode and the character of the softening transfers from the phonon to the relaxational mode. This is an important problem in determining the dynamics of the peculiar ferroelectric phase transition of LGO, where both the dielectric critical slowing down characteristic of the order-disorder phase transition and the soft phonon mode characteristic of the displacive phase transition are observed (Wada & Ishibashi, 1983; HaussÜhl et al., 1980). In the light of the above discussion we may say that the change up to Tm is caused by the softening of mode and the softening character transforms to the relaxations mode near Tm causing a change in the trend below Tm and near Tc the relaxational mode becomes dominant. The valley around Tm is perhaps caused by the interplay between the competitive relaxational mode and the soft phonon mode. It has been observed that softening of the velocity and rise of the damping of acoustic phonon occur in the paraelectric phase of LGO even quite far from Tc, i.e.(T-Tc) ∼ 30 K and the effect is attributed to the fluctuation induced contributions (Sinii et al., 1990).
\n\t\t\tThe stress dependence of the shift of Tc for Czx.
Another interesting aspect is the observation of a significant thermal photoelastic hysteresis (Fig. 16). Although the peak position does not shift in the heating cycle the values of the photoelastic constants get reduced significantly in the heating cycle as compared to the corresponding values in a cooling cycle. A similar kind of hysteresis was observed in the dielectric behaviour of LGO (Kudzin et al., 1994, 1995; Bain, 1994) and the appearance of the dielectric hysteresis is attributed to the internal space charge (electrets state) effects which produce an internal electric field in LGO on heating from the ferroelectric phase as described in section 2.1. It was possible to compensate the internal electric field effects in dielectric measurements by an external electric field (Kudzin et al., 1994, 1995; Bain, 1994). It is suspected that the photoelastic hysteresis also occurs due to similar effects. Although it was not possible to try to compensate the electric field effects in the present investigation, it is possible to attempt experiment under the simultaneous application of a suitable electric field and stress along z-direction.
\n\t\t\tObs. | \n\t\t\t\t\t\tCpq\n\t\t\t\t\t\t | \n\t\t\t\t\t\tParaelectric (PE) | \n\t\t\t\t\t\tAt Tc = 279 K phase (RT) | \n\t\t\t\t\t
1 | \n\t\t\t\t\t\tCxy\n\t\t\t\t\t\t | \n\t\t\t\t\t\t4.38 | \n\t\t\t\t\t\t3.85 | \n\t\t\t\t\t
2 | \n\t\t\t\t\t\tCxz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t5.55 | \n\t\t\t\t\t\t5.85 | \n\t\t\t\t\t
3 | \n\t\t\t\t\t\tCyx\n\t\t\t\t\t\t | \n\t\t\t\t\t\t3.60 | \n\t\t\t\t\t\t4.46 | \n\t\t\t\t\t
4 | \n\t\t\t\t\t\tCyz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t4.26 | \n\t\t\t\t\t\t5.50 | \n\t\t\t\t\t
5 | \n\t\t\t\t\t\tCzy\n\t\t\t\t\t\t | \n\t\t\t\t\t\t3.71 | \n\t\t\t\t\t\t4.83 | \n\t\t\t\t\t
6 | \n\t\t\t\t\t\tCzx\n\t\t\t\t\t\t | \n\t\t\t\t\t\t4.19 | \n\t\t\t\t\t\t5.45 | \n\t\t\t\t\t
Stress optical coefficients cpq (in brewsters) of Li2Ge7015 at RT=298 K and atTc = 279 K.
The Stress optical coefficients Cpq of the crystals Li2Ge7O15 at paraelectric phase (RT = 298 K) and at Tc = 279 K are presented in Table 6. It is important to compare the values of Cpq for Li2Ge7O15 with other ferroelectric crystals given in Table 7 particularly with Rochelle-salt (RS) which belongs to the orthorhombic class like LGO (Bain et.al., 1998).
\n\t\t\tObs | \n\t\t\t\t\t\tCpq\n\t\t\t\t\t\t | \n\t\t\t\t\t\tRochelle Salt (RS) | \n\t\t\t\t\t\tKDP | \n\t\t\t\t\t\tADP | \n\t\t\t\t\t\tRemarks | \n\t\t\t\t\t
1 | \n\t\t\t\t\t\tCxz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t3.74 | \n\t\t\t\t\t\t0.28 | \n\t\t\t\t\t\t1.25 | \n\t\t\t\t\t\tRef. [9] for RS | \n\t\t\t\t\t
2 | \n\t\t\t\t\t\tCyz\n\t\t\t\t\t\t | \n\t\t\t\t\t\t4.29 | \n\t\t\t\t\t\t0.28 | \n\t\t\t\t\t\t1.25 | \n\t\t\t\t\t\ta- polar axis | \n\t\t\t\t\t
3 | \n\t\t\t\t\t\tCyx\n\t\t\t\t\t\t | \n\t\t\t\t\t\t3.56 | \n\t\t\t\t\t\t1.04 | \n\t\t\t\t\t\t4.30 | \n\t\t\t\t\t\tRef. [26] for KDP | \n\t\t\t\t\t
4 | \n\t\t\t\t\t\tCzx\n\t\t\t\t\t\t | \n\t\t\t\t\t\t0.85 | \n\t\t\t\t\t\t1.54 | \n\t\t\t\t\t\t3.50 | \n\t\t\t\t\t\tRef. [27] for ADP | \n\t\t\t\t\t
5 | \n\t\t\t\t\t\tCzy\n\t\t\t\t\t\t | \n\t\t\t\t\t\t2.61 | \n\t\t\t\t\t\t1.54 | \n\t\t\t\t\t\t3.50 | \n\t\t\t\t\t\t\n\t\t\t\t\t |
6 | \n\t\t\t\t\t\tCxy\n\t\t\t\t\t\t | \n\t\t\t\t\t\t3.04 | \n\t\t\t\t\t\t1.04 | \n\t\t\t\t\t\t4.30 | \n\t\t\t\t\t\t\n\t\t\t\t\t |
Piezo-optic coefficients cpq (in Brewsters) for some ferroelectric crystals in their paraelectric (PE) phases.
The values of Cpq are significantly higher for LGO as compared to these ferroelectric systems. So, the large photoelastic coefficients and the other properties like good mechanical strength, a transition temperature close to room temperature and stability in ambient environment favour LGO as a potential candidate for photoelastic applications.
\n\t\tThe photoelastic coefficients Cpq of the ferroelectric crystals Li2Ge7O15 (x-irradiated) in a cooling and heating cycle between 298 K and 273 K was carried out with the experimental procedure described in section 1.4 and are shown in Fig. 20 (Bain et.al., “in print”). The results show an interesting photoelastic behaviour.
\n\t\t\tTemperature dependence of photoelastic coefficients Cxy,Cxz, Cyz, Cyx, Czx and Czy of the crystal (x-irradiated) LGO in a cooling (0) and heating (∆) cycle.
Peaks are observed in the temperature dependence of the photoelastic coefficients Czy and Czx at temperature ~ 279 K in a complete cooling and heating cycle whereas no discernible hysteresis is observed in rest of the photoelastic coefficients. Anomalous temperature dependence of Czx of the crystal (x-irradiated) LGO at different wave lengths are shown in Fig.21.
\n\t\t\tIt is observed that the peak value of Czy has increased about 25% and that of Czx has decreased about 18% at the wave length λ=5890 Å during cooling process of the crystal (Fig.16 and Fig.20). The peak value of Czx of the crystal (un-irradiated and x-irradiated) LGO thus obtained at different wave lengths (Fig.17 and Fig.21) are given in Table 8 and the results are plotted in Fig.22.
\n\t\t\tTemperature dependence of photoelastic coefficient Czx of the crystal (x-irradiated) LGO at different wave lengths in a cooling (0) and heating (∆) cycle.
It has been observed that the changes in the value of photoelastic coefficients Czy and Czx of the crystal (x-irradiated) LGO in a cooling and heating cycle occur only if the crystal is stressed along the polar axis (c-axis). It is known that the irradiation of crystals can change physical properties of the crystals.
\n\t\t\tIrradiation brings about many effects in the crystal such as creating defects, internal stress and electric fields etc (Lines & Glass, 2004). In our present studies, the x-irradiation is believed to produce internal stress and electric fields inside the crystals Li2Ge7O15 due to defects that can change the values of photoelastic coefficients.
\n\t\t\tWave lengths (Å) | \n\t\t\t\t\t\tCzx (un-irradiated) Cooling Heating | \n\t\t\t\t\t\tCzx (x-irradiated) Cooling Heating | \n\t\t\t\t\t||
4880 | \n\t\t\t\t\t\t4.8 | \n\t\t\t\t\t\t4.0 | \n\t\t\t\t\t\t4.05 | \n\t\t\t\t\t\t3.3 | \n\t\t\t\t\t
5390 | \n\t\t\t\t\t\t4.7 | \n\t\t\t\t\t\t3.9 | \n\t\t\t\t\t\t3.95 | \n\t\t\t\t\t\t3.2 | \n\t\t\t\t\t
5890 | \n\t\t\t\t\t\t5.6 | \n\t\t\t\t\t\t4.8 | \n\t\t\t\t\t\t4.6 | \n\t\t\t\t\t\t3.7 | \n\t\t\t\t\t
6140 | \n\t\t\t\t\t\t4.5 | \n\t\t\t\t\t\t3.6 | \n\t\t\t\t\t\t4.3 | \n\t\t\t\t\t\t3.4 | \n\t\t\t\t\t
The peak value of Czx (in Brewster) for the Crystal (un-irradiated and x-irradiated) LGO at different wave lengths in the cooling and heating cycles.
The peak value of Czx for the un-irradiated (black colour) and x-irradiated (ash colour) crystal LGO at different wave lengths in a cooling (0) and heating (∆) cycle.
It is known that the high optical quality, good mechanical strength and stability in ambient environment, large photoelastic coefficients in comparison with other ferroelectric crystals like Rochelle-salt, KDP and ADP favors the crystals LGO as a potential candidate for photoelastic applications.
\n\t\t\tThe piezo-optic dispersion of the crystals (un-irradiated and x-irradiated) LGO in the visible region of the spectrum of light at room temperature (298 K) have been described in section 1.4 and 1.5. It shows an “optical zone or optical window” in between 5400 Å and 6200 Å with an enhanced piezo-optical behavior. This peculiar optical window can have a technical importance. This window region can act as an optical switch for acousto-optical devices. From the studies undertaken it may be concluded that LGO is an attractive acousto-optic material which deserves further probe. It may be possible to understand the observed behavior if extensive piezo-optic and refractive index data become available over an extended range of wavelengths.
\n\t\t\tIt has been observed in section 2.2 that the value of impedance of the crystals LGO decreases sharply with increasing frequency and tends to zero value at about the frequency 10,000 kHz. So, in the application point of view, LGO is also suitable for conductivity even at room temperature and frequency controlled switch.
\n\t\t\tThe temperature dependence of the photoelastic coefficients of the crystals (un-irradiated and x-irradiated) LGO in a cooling and heating cycle between room temperature (298 K) and 273 K have been studied in section 3 and 4. It shows an interesting observation including the lowering of the Tc under uniaxial stress contrary to the increase of Tc under hydrostatic pressure and observation of thermal photoelastic hysteresis similar to dielectric hysteresis behavior. In our studies, the x-irradiation is believed to produce internal stress and electric fields inside the crystals LGO due to defects that can change the values of photoelastic coefficients, as described in section 1.5 and 4.
\n\t\tEnergy can be added to the basic need of humans to live on the earth’s planet. We need energy in our daily life and economic development, but there is an insufficient energy demand in our world especially for developing countries [1]. The demand for energy is increasing exponentially due to the global population growth and economic development. As the United Nations Department of Economic and Social Affairs (UNDESA) has reported, population size is predicted to extend by two billion within the next 30 years. The expansion rate of the world population indicates that the present world population could jump from currently 7.7 billion to 8.5 by 2030, 9.7 billion by 2050, and 10.9 billion by 2100 [2]. For this population expansion, enormous energy will be required. However, fulfilling this energy demand is a key challenge and a huge obstacle for dreaming of continuous green earth [3]. Currently, fossil fuel-based energy is dominating worldwide, which is meant since it is not replaceable it is running out very fast. In addition to this, to control the amount of CO2 within the air, it is necessary to reduce the energy demand from fossil fuels and increase the supply of the energy from renewable energy sources [4]. As an alternative to fuel energy, and to minimize CO2 emission, solar cells, among all the renewable energy resources, can provide an efficient and environmentally friendly solution, for a sustainable green earth, which converts sunlight directly into electricity [5, 6]. The amount of energy humans use annually is about 4.6 × 1020 joules, and this amount of energy is delivered to Earth by the Sun in 1 hour [7]. The largest power that the sun unceasingly delivers to earth is 1.2 × 105 terawatts, which is bigger than each different energy supply, either renewable or nonrenewable [8]. It dramatically exceeds the speed at which human civilization produces and uses energy currently about 13 TW [2, 8, 9]. Depending on the estimation of the population growth rate; the global energy demand is predicted to exceed 30 terawatts by 2050, about double the current energy [2].
Solar cells have been widely utilized in different replaceable energy generation projects including roof-top installations, solar farms, spacecraft, and portable solar battery banks [10]. More importantly, solar cells have been also utilized in building-integrated photovoltaic systems for harvesting solar power, toward the goal of self-sustainable modern infrastructures, such as glass-greenhouses, bus stops, and smart building components, that is, energy generating and saving PV glass [11]. Although the resource potential of photovoltaic (PV) is gigantic, it currently constitutes a little fraction of the worldwide energy supply. One among the factors limiting the widespread adoption of PV is its low-energy density, low efficiency, and comparatively high-cost as compared to other energy technologies [12, 13]. In order to widely apply PV, scientists and researchers around the world are still conducting research on this area, including the event of varied sorts of solar cells that specialize in improving the conversion efficiency also [14]. One among the foremost relevant metrics for PV devices is that the power conversion efficiency (PCE), that is, the efficiency with which sunlight is often converted to electric power. There are several factors, from structural defects to resistance to shading effects, which affect the conversion efficiency, also as the overall performance of solar cells.
A significant effort in photovoltaic research today is objectively to enhance PCE, while simultaneously reducing cost [15]. The overwhelming majority of today’s PV market consists of three types of generation [16]: the first-generation PV is silicon-based solar cell modules, which currently dominate the solar power market due to their low-cost and long-term reliability, but only convert about 8–19% of the available solar power [17]. Second-generation PVs are thin-film solar cells that aim to decrease cost by utilizing less material and depositing on inexpensive substrates, such as metal foil, glass, and plastic. This type of PVs includes cadmium telluride (CdTe), amorphous Si, and copper indium gallium diselenide (CIGS), all of lower material quality and PCE compared to first-generation cells [18]. In order to overcome these shortage, third-generation PVs [19] are recently being pursued that aim to strike the Shockley-Queisser efficiency limit of ~30% (1 Sun) for one p-n junction [20], while keeping or reducing cost.
The III–V multi-junction planar solar cells are included under third-generation PV and have attracted several interests in the recent candidate of the solar cells that have terribly high efficiencies larger than 40% grown on Ge substrates [21]. Nevertheless, planar III–V materials and Ge substrates needed for these devices are too rare and expensive for widespread use [22, 23]. Since the main barriers to the large-scale uses of solar energy are due to the difficulties in balancing the cost and efficiency of existing devices, innovations are needed to reap solar power with greater efficiency and economic viability. The right resolution is to form the high-efficiency III–V solar cells onto the cheap mature Si platform and develop III–V/Si two-junction cells [22, 24]. It has been foreseen that III–V/Si are able to achieve an efficiency of above 40%, nevertheless, the lattice and thermal expansion coefficient mismatches between III–V layers and Si substrates are still preventing the effective implementation of this idea [22].
By reducing the size of materials from bulk to nanoscale and developing the cheap growth method can solve the problem in III–V multi-junction thin-film solar cells. Recently solar cells in one dimension and zero dimensions geometry materials have got attention. Different materials in nanowire geometries, such as Si, III–V compounds (e.g., GaAs, InP, and III-nitride-based), II-VI compounds (e.g., CdS/CuS2 and CdS/CdTe), and most recently perovskites have been studied for solar energy harvesting [25]. NW-based solar cells are forest or single of one dimensional (1D) rods, wires, or pillars having lengths typically on the order of microns and diameters on the order of tens to several nanometers. They have unique and wonderful optical and electrical properties and they also offer flexibility to create heterojunctions in both axial and radial directions. Due to their highly anisotropic shape and enormous index of refraction, they behave as optical antennae with improved absorption and emission properties, and thus better photovoltaic cell efficiency compared to a planar material with equivalent volume [26]. The theoretical efficiency of an NW array solar cell can reach approximately 32.5% for bandgap at approximately 1.34 eV under AM 1.5 solar spectrum, exceeding that of a planar bulk solar cell (31%) with the same bandgap, implying an important advantage of reduced material usage and cost [27, 28]. The theoretical power conversion efficiency of 48% is also reported using Al0.54Ga0.46As, GaAs, and In0.37Ga0.63. As NWs arrays grown on a silicon substrate [29].
The NW arrays could also provide substantial reductions in material consumption as well as production costs for III–V-based solar cells, in part because they can be grown on low-cost substrates, such as silicon [30]. Among III–V-based solar cells, GaAs and InP are of specific interest for photovoltaic cell applications due to their direct bandgaps, which are close to the ideal value for maximizing PCE under AM 1.5G spectrum [31]. For the first, the best-reported efficiency above 10% for III–V NW is an InP nanowire cell with 13.8% efficiency [30]. The highest power conversion efficiency of the III–V NWs record is caught by InP NWs, which is 17.8% [32]. This value is approached to a planar solar cell that has been reported for silicon radial junction with vertically aligned tapered microwires achieving power conversion efficiency of 18.9% [33]. The principal goal of third-generation PVs is not only the continual increase of power conversion efficiencies but also the reduction of solar cell development costs; novel hybrid materials can provide a practical solution [27]. The array nanowire solar cells are much more important and promising. However, their current efficiencies are much lower than their theoretical prediction. NW synthesis, characterization, and device fabrications are the challenges to achieve the theoretical efficiency predicted theoretically [34].
In this review, we have focused on the synthesis process of III–V nanowires, solar energy harvesting, photon-generated carriers, different design of nanowire solar cells, and ultimately the mostly achieved power conversion efficiency for some of III–V NWs. III–V NW solar cells have gained attention, especially since 2009 and many papers have been published. Depending on these published papers, we have discussed the papers published since 2010 for each aforementioned focused area in this review.
Nanowire can be synthesized through three approaches: i) top-down approaches, ii) bottom-up approaches, and iii) the combination of top-down and bottom-up approaches.
The top-down approach begins with a bulk material (microscopic materials), which will be by selection removed to create NWs through lithography patterning and wet/dry etching method [35]. From epitaxially grown-up thin films, they provide the advantage of fabricating NWs with exactly controlled doping profile and layer thickness [23]. If this NW structure has a p-n junction, it will be incorporated as an axial p-n junction after the NWs are formed. To create a radial p-n junction, ion implantation and molecular monolayer doping (MLD) can be used [31, 36, 37]. In the fabrication of nanowires, numerous lithographic styles are used with controllable exposure, size, and distance for dependable light-trapping and latterly high-effectiveness solar cells [38]. The traditional optical lithography can offer a high result, but its essential dimension is confined by the optical phenomenon restriction of the sun wavelength [38, 39]. On the other hand, traditional electron-beam lithography (EBL) has a veritably high resolution but suffers from high-cost and low throughput [40, 41]. Nanoimprint lithography (NIL) [42, 43] can be used in order to obtain both high throughput and resolution, and self-powered parallel electron lithography may be used [44, 45]. The NIL technology avoids light diffraction in optical lithography and can fabricate the nanowires with fabricating accuracy up to several nanometers [46]. The process includes lithography patterning, and then dry etching to obtain nanowires with vertical and smooth sidewalls [36, 47]. Subsequently, wet etching processes are also conducted to first etch the remaining etching masks followed by the removal of physically damaged and nonstoichiometric oxidized surface layers [48]. The top-down have disadvantages when compared with bottom-up approaches. It does not offer any material saving and also lack freedom in material design. Furthermore, the etching process could introduce surface defects that adversely affect the nanowire’s optical and electrical properties, and thus lead to much-degraded device performance [49].
Bottom-up approach NW synthesis is supported by gas-phase epitaxial growth technique to supply detached NW ensembles with or without order. There are many techniques employed under the bottom-up approach for nanowire growth, such as chemical vapor deposition (CVD) [46, 50, 51], chemical-beam epitaxy (CBE) [52, 53], laser ablation [54], and hybrid vapor-phase epitaxy [55, 56]. Nevertheless, III–V semiconductor nanowires are mainly grown by either metal–organic vapor-phase epitaxy (MOVPE) [57, 58, 59, 60] or molecular-beam epitaxy (MBE) technique [61, 62] with and without catalysis assistance. Catalyzed growth involves the use of metal nanoparticles, such as Au, Al, and other metals [34].
The catalysts that are used as an assist in the growth of NWs can be external or from the elements of materials used to grow NWs, which are called seed particles. In general, we can classify the NWs growth mechanisms into four as shown in Figure 1: (i) homoparticle growth, (ii) heteroparticle growth, (iii) non-catalyst growth, and (iv) oxide-assisted growth. The seed particles can be homoparticle growth (Figure 1c); in this case, a seed particle is formed consisting of one or all elements used for wire growth or it can be simply a self-assisted growth. As the seed particle size varies during growth both length and diameter increase. The seed particles can also be heteroparticle growth (Figure 1d) and in this case, a seed particle (typically Au) is deposited prior to growth, in simple words, it is a foreign metal-assisted growth technique. Throughout heating to increase temperature the seed particle alloys with the substrate and/or material forms the gas phase. In this case, particle size during growth is constant. Noncatalyzed growth includes selective area epitaxy (SAE) where growth occurs on a prepatterned substrate [64, 65, 66]. In selective area epitaxy, an epitaxial layer nucleates in openings of a mask layer and continuously grows in height; its lateral growth is restricted by low-energy facets (Figure 1a). [63, 67]. Oxide-assisted growth (OAG) is additionally a mechanism used in crystal growth with the aid of the semiconductor substance’s oxides as a passivating shell to suppress the subsequent growth [68]. During OAG growth, the semiconductor and its oxide are adsorbed on the substrate, where the semiconductor produces nucleation centers, which also create the semiconductor nanowires, while the oxide forms a passivating shell (Figure 1b).
Schematic representation of four basic nanowire growth mechanisms: (a) selective area epitaxy, (b) oxide-assisted growth, (c) homoparticle growth, and (d) heteroparticle growth [
For the non-catalyzed growth method, Maoqing Yao et al. [69] fabricated arrays of GaAs nanowires solar cell with an axial p-i-n junction, which are grown by selective area growth (SAG) method, using mass production compatible metal-organic chemical vapor deposition (MOCVD) technique. This growth method is free of the metal catalyst. The fabrication process of their axial junction GaAs nanowire solar cell is shown in Figure 2a. Their fabrication steps are (1) electron-beam lithography is applied to form hole array in silicon nitride mask, (2) SAG of p-i-n GaAs nanowire using MOCVD, (3) BCB infiltration, (4) reactive ion etching (RIE) to expose nanowire tips, and (5) transparent conductive indium tin oxide (ITO) deposition. The SEM images for as-grown vertical GaAs nanowire array (Figure 2b), after nanowires are embedded in BCB and etched by RIE to expose short tips (Figure 2c) and after coating of ITO film by sputtering (Figure 2d) is displayed.
Solar cell fabrication process and SEM images. (a) Fabrication steps of GaAs nanowire array solar cells with axial junction, (b) 30° tilted SEM image of as grown vertical GaAs nanowire array on GaAs (111) B substrate, (c) SEM image after nanowires are embedded in BCB and etched by RIE to expose short tips, and (d) SEM image after coating of ITO film by sputtering. A conformal dome-like cap is formed on the tips of nanowires [
NWs are grown from the vapor-liquid-solid (VLS) method during which an NW is grown from the vapor phase employing a metal seed particle, like Au as shown in Figure 3a, that is usually liquid at the expansion temperature (after alloying with the substrate and/or growth species) [56, 70, 71]. The VLS growth technique as its name suggests is the growth method from the combination of the three phases (vapor phase, liquid phase, and solid phase). The vapor phase is the gas phase precursor, the liquid phase is the catalyst and the solid phase is the final grown nanowire. A foreign metal can be used to promote NW growth by forming a liquid eutectic with the desired NW material through this mechanism (Figure 3a and b). In such NW synthesis, the chemical precursor’s vapors are transported into the hot zone by an inert carrier gas and react on a substrate with metal catalyst nanoparticles [72]. With the proper choice of substrates, catalysts, precursors, and growth conditions, various types of vertical NWs, as well as planar NWs can be achieved [73]. While VLS synthesis is the most common with the seed particle in a liquid state, a mechanism is also possible if the catalysts remain solid and do not form a eutectic with the NW material [74]. Such solid-phase diffusion mechanism happens below the catalyst’s eutectic point with the metal seeds remaining as solid [75]. Ingvar Aberg et al. [76] have grown GaAs NW array solar cells by the VLS growth Au-assisted method, which demonstrated a 1-sun independently verified solar energy conversion efficiency of 15.3%.
Schematics for three typical nanowire growth mechanisms: (a) foreign metal–catalyzed growth, (b) self-catalyzed growth, and (c) selective area epitaxy [
As explained in the previous section the VLS method can also be use self-assisted. The self-assisted method uses a component of the NW itself as shown in Figure 3b, which avoids the utilization of foreign metal elements [41]. A foreign particle which found on the top of NWs may cause harmful effects like contamination of the NWs, increased contact resistance, or reflection of sunshine from a photovoltaic device [77]. These foreign metallic particles can be etched after device processing, but etching might cause problem and will have a negative effect on the performance of device. Figure 3c shows the oxide-supported growth mechanisms.
Mandl et al. [63] have grown InAs NW by a VLS mechanism employing a liquid In droplet and they identified that the presence of the oxide layer is vital to immobilize In droplets on the surface, restricting the particle size and NW nucleation formed. They have concluded that NWs can be grown in the sequence, as illustrated in Figure 4: (a) in the deposited SiOx openings form during heating the substrate; (b) when the trimethylindium (TMI) precursor is activated, the In atoms adsorbed on the surface diffuse into immobile In droplets formed in the openings of the SiOx layer; (c) at the interface between indium particles and the substrate underneath, NW growth is began by enhancing the rate of growth in one direction; and (d) after deactivation of the TMI supply, the droplet forms InAs NW.
The growth mechanism illustration of nanowires: (a) layer before growth, (b) layer during heating and creation of hole, (c) formation of In droplets, (d) growth of the NWs under the In droplets, and (e) droplet solidification during cooling [
The main challenge regarding the performance of thin-film photovoltaic cell structure is the sunshine reflection losses, for instance, with no treatment materials, around 30% of the light illuminated at the Si surface can be lost due to the reflection at the interface between air and Si [78]. During the illumination of sunlight to the surface thin-film cell, some of the light is converted into energy, others will be transmitted, whereas some parts reflect [79]. The loss due to reflectance can be reduced by using techniques, such as coating with anti-reflection and light trapping materials [80]. To reduce this loss, the most commonly used is dielectric antireflection coatings; however, it is difficult to hide the whole absorption wavelength range. Broadband antireflection methods will be achieved by light trapping schemes, such as inverted pyramid structures, but these boost the cost due to their complicated fabrication method. Contrary, NW arrays have a strong antireflection ability with superior wavelength, polarization, and angle-dependent properties compared to planar structures because NWs can form graded-refractive index layers [80]. Consequently, it will reduce the light reflectance at the interface of the two media by avoiding abrupt changes in the refractive index [81].
Wu et al. [82] have presented a model for effective and fast design of both squarely and hexagonal InP NW arrays to achieve the highest light-harvesting for PV application, achieving the maximal short-circuit current density of 33.13 mA/cm2. They have investigated the geometrical dimensions for vertically aligned single, double, and multiple diameters of NW arrays. NWs and nanorods have almost the same properties and solar cells can also grow as nanorods morphology to harvest highly efficient sunlight by reducing reflection. Diedenhofen et al. [50] grew layers of GaP nanorods on AlInP/GaAs substrates. They found that nanorods can greatly reduce the reflection and increase the sunshine transmission into the substrate overbroad spectral and angular ranges due to the graded index of refraction. Strudley et al. [58] studied the sunshine transport inside an NW mat. They found that due to mesoscopic transport the high-density semiconductor NW mats exhibit huge interference contributions. From their statistical analysis of intensity oscillations, they linked that transport for focused illumination is governed by a minimum of around three open transmission modes, which is a record low value for light in a 3D medium.
Schematics of vertically aligned InP NW arrays. (a) Squarely, and (b) hexagonal NW arrays with insets explaining their respective unit cells [
Additionally, semiconductor NW is a 1D nanostructure, which is usually on the order of the sunshine wavelength. Due to their high refractive index, they behave as optical antennae that can modify the absorption and emission properties [80]. The absorption properties of NWs when they are vertically standing are determined by the waveguide modes [82]. InP NW arrays, which are vertically aligned and grown on a semi-infinite SiO2 substrate are schematically shown in Figure 5 with either squarely or hexagonal arrangement. Repeatable unit cells in Figure 6a and b insets show respective characterization dimensions for each arrangement. Such morphology and topology of the NW arrays are in accord with the majority of the InP NW-based photovoltaic cell structures. Within each of the unit cells, the NWs own identical or different diameters as Di (where i = 1, 2, 3,…). Periodicity P is the core to core spacing of a pair of adjacent NWs that has an analogous value for squarely arranged NWs, whereas fully different values for hexagonal NW clusters.
(a) Schematic drawing of the periodic GaAs NWs structure, (b) absorptance, (c) reflectance, and (d) transmittance of GaAs NW array with different fill factors [
NWs are more efficient in light absorption compared to thin-film materials of an equivalent volume. Krogstrup et al. [84] have observed a remarkable increase in absorption in single-NW solar cells, which is related to the vertical configuration of the NWs and to a resonant increase in the absorption cross-section, and the results obtained opened a new route to third-generation PVs cells. Their short-circuit current result of 180 mAcm−2 is higher than that predicted by the Lambert-Beer law.
On other hand, when the NW is lying horizontally, the absorption properties are determined by leaky-mode resonances, which provide a chance to engineer the light absorption in NWs by controlling their physical dimensions [85]. Once the resonant modes are supported by the NWs leaky, the overlap between the incident electromagnetic attraction field and the guided mode profile is maximized, facilitating enough coupling with incident light.
Due to their outstanding advantages, NW arrays have advanced light trapping ability and hence strongly enhanced optical absorption in comparison with the thin-film [86]. This can significantly enhance the broadband light absorption over a good range of incident angles, especially the near and below bandgap absorption [81, 87]. With the same thickness as thin-film layers, the NWs short-circuit current can reach high results [88].
Nanowire diameter and separation are typically on the order of the wavelength of sunlight, where interference effects are dominant, therefore, the reflectance, absorptance, and transmittance of nanowire arrays must be determined using wave optics [89]. Long Wen et al. [83] have simulated to evaluate the efficiency limits of GaAs NW array solar cells and determined the requirements of the optical design for improving the efficiency Figures 6a-d. They have suggested that the optimized design NW might absorb 90% of above bandgap sunlight. Their combined optoelectronic simulation results reveal that optimization of optical geometry can lead to an attainable photovoltaic efficiency of 22%.
By fixing the filling factor, which is given by D/P, where D is the diameter of the nanowire and P is the separation between the grown nanowires, the effect of NWs diameter can be determined by varying it. Figure 7a shows the optical characteristics of the GaAs NW array with different diameters at a fixed D/P of 0.5 is plotted. The absorptance of a 2.2
(a) Absorptance of NWA with different diameters, and (b) Photogeneration profiles calculated by FDTD simulations [
Figure 7b shows plots of the vertical cross-section of the photogeneration profiles. The NWs with D = 60, 180 nm and D/P = 0.5 under 1mWcm−2 sunshines at different wavelengths for photogeneration rates are revealed. At λ = 400 nm, it is concentrated near the highest sides of the NW for both diameters. Only a little fraction of the incident wave is transmitted onto the substrate, this will be explained by the short absorption length of GaAs at this wavelength. At 600 nm and above, for a NW, the photogeneration rates are focused on several lobes that form along the NWs for a NW array with 180 nm diameter, indicating strong guided modes confined within the NWs. In contrast, for the case of D = 60 nm, the optical generation becomes more homogeneously covered by the NWs with a longer wavelength. Clearly, the 180 nm diameter NW array induces a much larger optical concentration than the 60 nm diameter one. From both Figures 6 and 7 one can easily understand the effect of NW diameter on photon energy harvesting.
Photocurrent density is often further bettered by adding nanowires length (L). Figure 8 shows the reckoned donation to all photocurrent from the NWs and the substrate during a GaAs NW PV device for an NW periphery of 180 nm and a period of 350 nm (90). Due to the proliferation of NW length, the donation from the nanowire to all photocurrent rises, while the GaAs substrate donation similarly decreases. The uttermost photocurrent of 27.3 mAcm−2 is obtained at 5 μm length, is on the brink of the perfect photocurrent density of 29.9 mAcm−2 (calculated by integrating the AM1.5G spectrum above the GaAs bandgap). At the optimum NW diameter, spacing, and length of the harvesting properties of III–V NWs can be improved.
Theoretical contributions from a GaAs nanowire array and the GaAs substrate to the total photocurrent density in a PV device versus nanowire length obtained at a nanowire diameter of 180 nm and period of 350 nm [
In 2015 Nicklas Anttu [28] compared the effectiveness of InP NW assemblage solar cells with the classical InP bulk solar cells. They accounted an NW assemblage of 400 nm periods, 4 μm length, and 170 nm periphery, which may produce 96 of the short-circuit current accessible within the impeccably taking up InP bulk cell. Also, the NW solar cells cast smaller photons than the bulk cell at the identical occasion, which allows for a more open-circuit voltage. They consequently found that NWs longer than 4 μm can really show, despite producing a lower short-circuit current, an efficiency limit of up to 32.5% that is above the bulk cells.
They have predicted the unborn capabilities in affecting both the emission and absorption characteristics of the NW assemblages, for instance, by (1) varying NWs shape, (2) varying the period of NWs, (3) sheeting the NWs with a nonabsorbing dielectric shell, (4) fitting a dielectric material between the NWs, and (5) by introducing optical antireflection layers on top of the NW. Such improvement of the NW array could conceivably further accelerate its effectiveness limit.
Based on the axis of charge carrier separation, an axial and a radial junction device are the two broadly classifying NW solar cells. The charge carrier separation happens along the length of the nanowire and the radial axis, in axial junction, and radial junction solar cells, respectively. Figure 9a and b display sunlight absorption and charge carrier separation in both axial and radial junctions NW solar cells correspondingly. In a solar cell, the minimum length needed to attain ample absorption is characterized by absorption depth. The absorption depth explains how deeply light penetrates the NW semiconductor or every type of solar cell device before being absorbed. At the same time, diffusion length describes the maximum length that the minority charge carrier can travel before making recombination non-radiatively [91]. For solar cells, in order for them to efficiently operate, the diffusion length should be higher than the absorption depth, as schematically shown in Figure 9. Radial junction is preferable for the fabrication of large-efficiency devices by connecting the light absorption and charge carrier separation axes. In a radial junction PV cell, sunlight absorption is along the main axis of the NW, while the charge carrier separation takes place within the radial direction, which is in nm-scale thickness. In other words, to realize the optimum performance of the NW photovoltaic cell in a radial junction photovoltaic cell, both charge carrier separation, and light absorption can separately be optimized.
Nanowires solar cells schematic representation of (a) an axial p-n junction, and (b) a radial p-n junction. α denotes the absorption coefficient of the active material and Ln and Lp denote the electrons and holes diffusion lengths, respectively [
Yao et al. [69] have carried out an optical simulation to predict the optimized axial junction and radial NW array for maximum light absorption and have compared the merits and demerits of these NWs. They have also synthesized GaAs NWs solar cells with an axial p-i-n junction by selective area growth method, which is compatible with MOCVD technique, and they observed that low filling ratio NWs are highly absorbed. They have also studied the effect of the diameter and revealed that thicker NWs are favorable because of the high surface recombination velocity on the bare GaAs NW surface. They identified that by decreasing junction depth to around 100 nm and maintaining diameter at 320 nm, able to achieve efficiencies as high as 7.58%. Their results demonstrated that GaAs NWs are good candidates for high-efficiency and low-cost solar energy conversion and open up great opportunities for the next generation photovoltaic based on multi-junction devices composed of lattice-mismatched material systems.
For solar cells, one of the key needs is to realize efficiency that keeping a huge optical thickness to facilitate high light absorption and a tiny low electrical thickness to facilitate high photogenerated carrier assortment at the contacts. The gathering of high photogenerated carriers depends powerfully on the diffusion length of minority carriers, which decline quickly with the rise in density of defect [22]. Generated carriers are going to be wasted when they are quite one diffusion length far away from the space charge region [92]. The diffusion length, Ld, of electrons or holes in a semiconductor is defined by the mean distance the relevant charge moves within the semiconductor. It is influenced by the mean distance the relevant charge moves within the semiconductor and recombination/extraction from the semiconductor. Diffusion is the movement of charge carriers directed by a concentration gradient. The diffusion coefficient (D) and additionally the equivalent term among the presence of a field, mobility (μ), are associated with one another by the relation [92]:
and
where τ is the charge lifetime.
When the cell is not operational at open-circuit voltage, that is, the charge is extracted, and then the lifespan can clearly be less due to the removal of the charge extracted. This is no longer an intrinsic property of the absorbing semiconductor itself, however, depends on the interfaces that exist between the semiconductor and charge extraction phases. The lifespan of charge refers to the minority charge carrier lifespan for semiconductors that are obviously either n-type or p-type. Differentiation into majority and minority carrier lifetimes is not obvious for an intrinsic semiconductor, such as the intrinsic semiconductor in a p-i-n cell [93].
In a conventional thin-film device, the gathering path of the generated carriers is parallel to the solar photon traveling path. Thus, thick enough absorption materials are in high demand on the quality of the crystal, in order that the carriers can easily undergo without any substantial recombination. The morphological anisotropy of nanowires provides the advantage of decoupling the optical and electrical thickness of PV cells by using the co-axial contact structure [91]. It can absorb sunlight along the entire nanowire, while the generated carriers are frequently separated within the radial direction. The radial distance that carriers need to travel (in the 100 s nm range) is generally much lower than, or similar to the minority carrier diffusion length. So far, the orthogonally severed sunshine and carrier separation paths can cause low bulk recombination, and hence high effectiveness. Also, the NWs have a high surface-to-volume ratio, which offers a large junction area that will further enhance the charge separation effectiveness.
The study showed that the influence of adjusting the diffusion length under radial junction may be a smaller amount than in planar junction, that is the utmost efficiency of both radial p-n junction geometry and planar geometry can increase with increasing diffusion length, but the planar geometry increases more [94, 95]. The difference in the performance between the planar and radial structures for III–V semiconductors with a high carrier diffusion length is, not as clear as that for Si [94]. However, NWs have a large surface-to-volume ratio and hence, a large density of surface state [93, 96]. All these merits allow using lower-purity, less expensive materials with low minority carrier diffusion lengths to make high-efficiency solar cells. Consequently, the use of the NW structure can enormously decrease the device cost. Due to these advantages, NWs are promising high-efficiency and less expensive solar cells and have the potential to revolutionize solar power harvesting technology.
The distinctive structure and advanced properties of NWs provide additional freedom in constructing novel solar cells with high-efficiency and low-cost. That is solar cells can be designed in different architectural such as tandem solar cells, axial tandem solar cells, multi-terminal solar cells, inorganic nanowire/organic hybrid solar cells, branched solar cells, and flexible solar cells, in which III–V nanowires can also be designed.
Tandem solar cell [97] is one type of design in order to have high efficiencies in solar cells, which is to use multiple semiconductors epitaxially grown on top of each other. Figure 10 shows the system with two different semiconductor materials, where one material is used as top materials and different materials are used as bottom cell materials. In this figure Ltop, Lbot, Dtop, and Dbot illustrate the length of the top cell, length of the bottom cell, the diameter of the top cell, and diameter of the bottom cell, respectively. It is to absorb high-energy light in a large bandgap top cell in such a tandem solar cell. Compared to the single junction cell, the thermalization loss of the high-energy light is decreased in the top cell. Then, the lower energy light continues to the bottom cell where these energies are absorbed. The bottom cell has a lower bandgap and due to the lower bandgap than in the single-junction cell, more photons are absorbed in the bottom cell. Consequently, the tandem solar cell can absorb more photons than single-junction cells and also can have reduced thermalization loss. However, in planar cells, the crystal lattice constant should be matched in adjacent subcells to offer high-quality materials [97]. Due to this lattice mismatch, they cannot grow on Si substrate, which is the second most abundant earth element and cheap. Moreover, the III–V multi-junction cells in the conventional thin-film structure can give high-efficiency but need to use Ge as substrates, which is expensive. The blending of III–V solar cells on Si substrates can greatly reduce the value, which is extremely challenging.
(a) Schematic representation of a dual-junction NW array on the inactive substrate, and (b) illustration of the electrical design of NWs with axially configured p-i-n junction in which a tunnel junction connects the bottom and the top subcell [
Nanowire structures give an obvious advantage for multi-junction solar cells compared with thin-film cells. NWs have efficient strain relaxation, which permits for the fabrication and combination of dislocation-free and highly lattice-mismatched materials. In another word, III–V nanowire arrays can be grown on top of a Si substrate, giving the prospect of using the Si substrate as the bottom cell. Figure 11a shows the growing of III–V NWs on Si substrates consisting of a bottom Si cell and a top III–V nanowire cell [99].
Model geometry of III–V NW on a Si substrate (a) side view showing doped layers, and (b) top view showing a hexagonal NW of diameter D arranged in a square array of period P [
The optimum structure needs the absolute stylish NW cell to have a direct bandgap of near 1.7 eV, which can be achieved by employing a number of III–V emulsion semiconductor material systems. The optimum structure also requires equal current from each sub-cell, videlicet a current-corresponding condition. This may be realized by conforming the periphery, length, and period of the NW array. Thus, NW solar cells have further degrees of freedom compared with thin-film solar cells, whose current-matching is achieved by conforming to the consistency of the absorbing subcaste in each subcell. The optimum building needs the absolute stylish NW cell to possess a direct bandgap of closer to 1.7 eV, which can be attained by engaging a number of III–V semiconductor materials. The optimum building also requires equal current from each subcell, namely a current-matching condition. This may be realized by conforming to the length, period, and diameter of the NW array. Thus, NW solar cells have more degrees of freedom compared with thin-film solar cells, whose current-matching is achieved by adjusting the thickness of the absorbing layer. Hu et al. [98] designed the current matching 1.7 eV III–V NW top and 1.1 eV Si planar bottom cell by tuning the NW diameter and period (Figure 11b). They obtained the best photocurrent density of 17.8 mAcm−2 at NW diameter of 180 nm, period of 350 nm, and length of 5 μm, which result in 89.4% absorption of the AM1.5G spectrum and a promising efficiency above 30% under one sun illumination. Yao et al. [100] have reported the growth of III–V NW on Si tandem cells with the GaAs nanowire top cell and the Si bottom cell with a circuit voltage Voc of 0.956 V and a high-efficiency of 11.4%. Their simulation showed that the current-matching condition plays a crucial role in the overall efficiency of the device. They also have characterized that GaAs NW arrays were grown on lattice-mismatched Si substrates, which are less expensive. They concluded that tandem solar cells supported top GaAs nanowire array solar cells grown on bottom planar Si solar cells, open up great opportunities for high-efficiency and low-cost multi-junction solar cells.
Axial and radial tandem solar cells [101, 102, 103] are another form of solar cell designing. In axial tandem solar cells, because the photogeneration events happen most often in the middle of NWs, they cannot intrinsically block the generated carriers from reaching the surface and recombining like the radial junctions. Due to a similar reason, the radial tandem solar cell faces a challenge of inefficient absorption for the cell junctions away from the core of NWs. Thus, a composite structure that combines the advantages of the axial and radial structures would provide much higher efficiency compared with homogeneous ones [104].
Furthermore, NWs have a little cross-section, which allows them to accommodate big strains axially and laterally and this may greatly facilitate the blending of materials with large lattice mismatch, providing more freedom within the structure design compared with thin-film devices [105].
An axial NW heterojunction structure with lattice mismatch can be created from the results that the axial junction will distribute the strain across the interface, which will relax the straining step by step and elastically. Regardless of the length, there exists a critical diameter below which no interface dislocation is often introduced. Dislocation-free NWs heterojunctions, such as GaAs/GaP [106], InAs/InSb [107], and InAs/InP [108] have been realized even with large lattice-mismatch. For example, Ercolani et al. [107] have reported the Au-assisted CBE growth of defect-free zincblende structure InSb NWs. InSb NW was grown on the upper sections of InAs/InSb heterostructures on the InAs (111) B substrates. They have also observed that zincblende structure InSb is often grown without any crystal defects.
With the same concept, the nanowire core has advantages with regard to lattice-mismatch strain in that it can share the nearest mismatch strain, which results in a drastically reduced strain within the shell [109]. NW core-shell structure can thus accommodate larger lattice mismatch compared with thin-film structures [110]. V. Nazarenko et al. [111] have reported the growth of core-shell InGaAs/GaAs nanopillars by MOCVD on Si substrates. They demonstrated that a shell thickness around 160 nm defect-free GaAs grown on In0.2Ga0.8As core NWs despite a large lattice mismatch amounts to 2% for the 20%. Their TEM characterization showed an outstanding crystal quality in the entire pillar without defects. Wang et al. [112] have grown a novel NW structure for solar cells that axially connects core-shell p-n junctions (Figure 12a) with different bandgaps. In order to evaluate the performance of this NW, they have used a coupled 3D optoelectronic simulation and their simulation results revealed a high conversion efficiency of 16.8% at a low filling ratio of 0.196. After an outstanding current matching, a promising efficiency of 19.9% was achieved at a low filling ratio of 0.283, which is much higher than the tandem axial p-n junction under the same conditions. Figure 12b illustrates vertically aligned NW arrays of axially connected core-shell structures.
(a) 3D illustration of axially connected core-shell p-n structure with different III–V materials is axially connected by the tunnel diode in a NW, and (b) Schematic drawing of vertically aligned NW arrays [
The unique structure of NW p-n junctions enables substantial light absorption along the NW length and efficient carrier separation and collection within the radial direction. Heurlin et al. [113] demonstrated the growth of tandem junction InP NWs on a Si substrate. By applying in situ etching for total control over axial and radial growth they connected two photocurrents having p-n junctions in series by a tunnel junction. They observed a rise up of Voc by 67%. They also believed that this provides the best way toward realizing high-efficiency multi-junction solar cells that can be fabricated on a large area and low-cost Si substrates.
Multi-terminal NW solar cell is also another promising design of nanowires. Introducing multiple bandgap concepts into NW solar cell designs has high promise for maximum solar conversion efficiency [114]. Dorodnyy et al. [29] have proposed a multi-terminal NWs solar cell design as shown in Figure 13. Their NW design resulted in theoretical power conversion efficiency of 48% utilizing an efficient lateral spectrum splitting between three different III–V material NW arrays grown on a flat silicon substrate. These authors used Al0.54Ga0.46As, GaAs, and In0.37Ga0.63As NWs with bandgap 2.01, 1.42, and 0.93 eV, respectively. However, the main challenge would be the matter of growing different NW groups with different lengths required for device fabrication.
(a) Design concept illustration of the triple-junction NW array on a Si substrate, (b) Working principle of the design, and (c) Contacting scheme of the multiterminal device [
The mixing of inorganic NW and organic will give the opportunity to have hybrid solar cells and is also another design of the solar cells to offer high-efficiency materials [115, 116, 117, 118]. These two materials have their own advantages. Inorganic materials commonly possess high carrier mobility and affinity, whereas organic polymers commonly possess low carrier mobility and a short lifetime, which leads to low device efficiency. However, organic polymers are low in cost; as a result, researchers attempt to mix together the advantages of the two material systems. Due to the fast and efficient charge separation or collection, a greatly enhanced efficiency is hence expected for the inorganic NW/polymer combination. H Bi and R R LaPierre have fabricated hybrid solar cells consisting of GaAs NW arrays and poly(3-hexylthiophene) or P3HT. They have been fabricated by spin-coating poly(3-hexylthiophene) (P3HT) polymer onto vertically aligned n-type GaAs NW arrays synthesized by MBE and reached an efficiency of 1.04% (2.6 sun) [106].
NWs can also be fabricated and designed as branch cells. Branched NWs solar cells [118, 119, 120] can also be referred to as nanotrees or nanoforests. These nanowires have a tunable 3D morphology, homo or heterogeneous junction, and interface electronic alignment represent a unique system for applications in energy conversion and storage devices. 3D branched nanowires have merits, including structural hierarchy, high surface areas, and direct electron transport pathways and it is an attractive recent research area on energy. Lundgren et al. [115] simulated a high absorption structure branched nanowire (BNW) (Figure 14). They found that BNW tree configurations achieved a maximum absorption of over 95% at 500 nm wavelength. There has been great progress in fabricating branched NWs [115]. Wang et al. [122] have reported the branched and hyperbranched NW synthesized by a multistep nanocluster-catalyzed VLS approach. They have demonstrated the growth of branched Si and GaN NWs with multi-generation branches.
(a) Dimensions of a single branched nanowire tree. (b) Array of branched NW trees [
Lightweight and flexible solar cells are necessarily important for designing high-efficiency solar cells [123]. Lightweight and flexibility are two of the desired properties, which can substantially reduce the facility weight, minimize the transportation cost, and cause the assumption of smart solar cells, such as integrating flexible cells into clothing. NWs provide unique merits in realizing these advanced functions, as they are going to be buried into polymers and then easily peeled away from the substrates. Han et al. [124] fabricated flexible GaAs NW solar cells with NWs lying horizontally and achieved high efficiency of 16% under atmosphere 1.5 global illuminations. All the above discussed novel designs are very important for providing highly promising III–V NWs to greatly reduce the worth and boost the efficiency of solar cells, which may revolutionize the current solar cell technologies.
A solar cell is characterized by parameters, such as filling factor (FF), open-circuit voltage (Voc), short-circuit current (Jsc), and power conversion efficiency (η). Table 1 summarizes some of the fabricated III–V NWs solar cells since 2010. Values for each parameter and their growth mechanisms are also summarized. The main hindrance for commercializing III–V NWs solar cells is their low power conversion efficiency. Therefore, researchers around the world are trying to increase the efficiency of these materials by using novel designs, improving growth mechanisms, and device fabrication methods. The highest efficiency of III–V NW solar cells above 10% is reported by Holm et al. using GaAsP NWs with radial p-i-n junctions, which is 10.2% [133]. Next to this report, many III–V NWs with efficiency above 10% are reported. An efficiency of 19.6% using InP nanopillars is achieved by Son Ko et al. [145]. Krogstrup et al. even reported a high experimental efficiency of 40% using GaAs NWs [84].
III–V nanowires | Growth methods | Substrates | catalysts | Geometry | FF (%) | Voc (V) | η (%) | Jsc (mA/cm2) | Ref. |
---|---|---|---|---|---|---|---|---|---|
InGaAs | SA-MOVPE | n-GaAs (111) B | axial p-i-n | 72.1 | 0.544 | 7.14 | 18.2 | [125] | |
InP | SA-MOCVD | InP (111) A | p-i-n single | 74 | 0.69 | 2.81 | 5.52 | [126] | |
InP | VLS | InP (111) B | axial p-i-n | 68 | 0.61 | 7.6 | 18.2 | [127] | |
GaAs | VLS | Si (111) | Ga | ZB crystal structure | 40 | 0.45 | 4.1 | 22.8 | [128] |
InAs | MBE | p-Si (111) | p-n heterojunction | 32 | 0.31 | 1.4 | 14 | [129] | |
AlGaAs/GaAs heterojunctions | 3-D optoelectronic simulation | aNI | NI | axial and radial with AlGaAs passivation | NI | NI | 8.42 | NI | [130] |
GaAs | MBE | p-Si (111) | Au | axial p-n | NI | NI | 6.3 | NI | [131] |
GaAs/InGaP/GaAs | MOVPE | p-GaAs (111) B | Au | core-multishell | 52 | 0.5 | 4.7 | 18.1 | [132] |
GaAsP | MBE | p-Si (111) | Ga | core-shell p-i-n | 77 | 0.9 | 10.2 | 14.7 | [133] |
In0.3Ga0.7As | MOVPE | p-Si (111) | free | n-InGaAs/p-Si | 50 | 0.37 | 2.4 | 12 | [134] |
InN | MBE | n-Si (111) | free | axial p-i-n | 30.24 | 0.13 | 0.51 | 12.91 | [135] |
InP | Top-down | InP | axial p-n | 79.4 | 0.765 | 17.8 | 29.3 | [32] | |
InP | MOVPE | p-InP (111) B | Au | axial p-i-n | 72.4 | 0.906 | 13.8 | 24.6 | [30] |
InP | VLS | InP (111) B | Au | axial p-n junction | 73 | 0.73 | 11.1 | 21 | [136] |
InP | SA-MOVPE | p-InP (111) A | free | ITO/p-InP heterojunction | 68.2 | 0.436 | 7.37 | 24.8 | [137] |
InP | Top down | p-InP (100) | n-S-SAM/p-InP heterojunction | 60 | 0.54 | 8.1 | 25 | [36] | |
InP | SA-MOVPE | InP (111) A | free | NI | 59.6 | 0.457 | 6.35 | 23.4 | [138] |
InP | SA-MOVPE | p-InP (111) A | free | radial p-i-n | 58.5 | 0.674 | 4.23 | 11.1 | [57] |
InAs hetero | MBE | p-Si (111) | n-InAs/p-Si | 32 | 0.31 | 1.4 | 14 | [129] | |
GaAs | MOVPE | p-GaAs (111) B | Au | axial p-i-n | 79.2 | 0.906 | 15.3 | 21.3 | [76] |
GaAs | SSCVD | Non-crystalline | Au | Schottky contact | 61 | 0.39 | 16 | 67 | [124] |
GaAs tandem | SAE-MOVPE | Si (111) n,p | free | axial n-i-p/n-p Si | 57.8 | 0.956 | 11.4 | 20.64 | [100] |
GaAs | SAG-MOCVD | p-GaAs (111) B | free | 63.65 | 0.565 | 7.8 | 21.08 | [69] | |
GaAs | SA-MOVPE | n-GaAs (111) B | free | core-shell p-n | 62 | 0.44 | 6.63 | 24.3 | [139] |
GaAs | MBE | p-Si (111) | Ga | core-shell p-i-n | 52 | 0.43 | 40 (field concentration) | 180 (field concentration) | [84] |
GaAs/InGaP | SA-MOVPE | p-GaAs (111) B | free | Core-multishell p-n | 65 | 0.5 | 4.01 | 12.7 | [140] |
GaAs | VLS | Si (111) | Ga | radial p-i-n | 46.5 | 0.39 | 3.3 | 18.2 | [141] |
GaAs | SSCVD | Si/SiO2 | Au-Ga | Schottky contact | 42 | 0.6 | 2.8 | 11 | [142] |
GaAs | SA-MOCVD | p-GaAs (111) B | free | core-shell p-n | 37 | 0.39 | 2.54 | 17.6 | [143] |
GaAs hybrid | MOCVD | GaAs | free | GaAs/P3HT hybrid | 43 | 0.2 | 1.44 | 18.6 | [144] |
Some of the III–V NWs studied since 2010 and their efficiency achievement.
Power conversion efficiency was measured at 1 Sun, AM1.5G illumination; aNI represents not identified values.
Furthermore, the highest efficient III–V NWs large-area solar cells are rapidly developing [111]. The first large-area solar cell with high-efficiency higher than 10%, which is an InP NW array solar cell with an efficiency of 13.8%, is reported by Wallentin et al. [30]. Afterward, an efficiency of 11.1% with InP NW arrays is achieved by Cui et al. [136]. Then, an efficiency of 15.3% is achieved using GaAs NW arrays by Åberg et al. [76]. Ultimately, the III–V NW with the highest efficiency and world record is 17.8% reported by Dam et al. [32].
In order to convert solar energy into electrical energy, harvesting solar energy is required and solar photovoltaic is the most promising device for this purpose. Despite the excess of sunlight reaching the earth’s planet, the current percentage of solar energy is much smaller than both renewable and nonrenewable energies. This is due to low energy density, low efficiency, and relatively high-cost materials compared to other types of energy technologies. Therefore, novel materials that can enormously harvest sunlight are important and they are the current issues attracting research interest. Due to its unique properties from bulk materials, III–V NWs can be used as high-performance solar cells because of their attractive advantages, such as unique optical and electrical properties, direct band, and fewer solar light reflections. In constructing novel solar cells with high-efficiency and low-cost, the distinctive structure and advanced properties of NWs provide more freedom. Today’s solar cell market is dominated by the thin film of Si, which has the lowest efficiency, but low cost. By combining the advantages of III–V NWs and Si by growing III–V NWs on Si substrate tandem solar cells, enormously improved performance of the solar cells can be achieved. By controlling the III–V NW morphology and its geometry with optimum diameter, period, and length it is possible to get high-efficiency solar cell materials. Furthermore, III–V NW solar cells can be designed as tandem solar cells, axial and radial tandem solar cells, multiterminal solar cells, inorganic nanowire/organic hybrid solar cells, branched solar cells, and flexible solar cells.
Future works can be focused on the optimum design that can overcome all the limitations of III–V NW solar cells in order to achieve high-performance and low-cost III–V NW-based solar cells. Thus, one of the best aspects of III–V NWs commercialization with high power conversion efficiency may be achieved by designing it in a way that it can absorb solar light enormously with reduction of materials used and low-cost substrates. According to our understanding, all the designs of III–V NWs that are mentioned in this review are beneficial for future commercialization; however, it is good to identify the one that is more attractive than the others by conducting research on each design. All types of design have their own advantages in case of reducing materials used for the fabrications of solar cells and cost reductions. So far, it is good if this area will be researched more, especially on the architecture of III–V NWs due to its infinite advantages. Despite the challenges of achieving high efficiency in these NWs, they are the hope of the next-generation solar cells due to their flexibility for designing it even in a multi-junction of different NWs, which can absorb the different wavelengths of solar light for harvesting huge solar light. Furthermore, to advance III–V NW-based solar cells toward possible commercialization the power conversion efficiency should be increased, for which the tandem architecture is highly interesting by growing on Si substrate, which is cost-effective.
We acknowledge Adama Science and Technology University and Oda Bultum University for their financial support.
There is no conflict of interest.
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His studies in robotics lead him not only to a PhD degree but also inspired him to co-found and build the International Journal of Advanced Robotic Systems - world's first Open Access journal in the field of robotics.",institutionString:null,institution:{name:"TU Wien",country:{name:"Austria"}}},{id:"441",title:"Ph.D.",name:"Jaekyu",middleName:null,surname:"Park",slug:"jaekyu-park",fullName:"Jaekyu Park",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/441/images/1881_n.jpg",biography:null,institutionString:null,institution:{name:"LG Corporation (South Korea)",country:{name:"Korea, South"}}},{id:"465",title:"Dr.",name:"Christian",middleName:null,surname:"Martens",slug:"christian-martens",fullName:"Christian Martens",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Rheinmetall (Germany)",country:{name:"Germany"}}},{id:"479",title:"Dr.",name:"Valentina",middleName:null,surname:"Colla",slug:"valentina-colla",fullName:"Valentina Colla",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/479/images/358_n.jpg",biography:null,institutionString:null,institution:{name:"Sant'Anna School of Advanced Studies",country:{name:"Italy"}}},{id:"494",title:"PhD",name:"Loris",middleName:null,surname:"Nanni",slug:"loris-nanni",fullName:"Loris Nanni",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/494/images/system/494.jpg",biography:"Loris Nanni received his Master Degree cum laude on June-2002 from the University of Bologna, and the April 26th 2006 he received his Ph.D. in Computer Engineering at DEIS, University of Bologna. On September, 29th 2006 he has won a post PhD fellowship from the university of Bologna (from October 2006 to October 2008), at the competitive examination he was ranked first in the industrial engineering area. He extensively served as referee for several international journals. He is author/coauthor of more than 100 research papers. He has been involved in some projects supported by MURST and European Community. His research interests include pattern recognition, bioinformatics, and biometric systems (fingerprint classification and recognition, signature verification, face recognition).",institutionString:null,institution:null},{id:"496",title:"Dr.",name:"Carlos",middleName:null,surname:"Leon",slug:"carlos-leon",fullName:"Carlos Leon",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Seville",country:{name:"Spain"}}},{id:"512",title:"Dr.",name:"Dayang",middleName:null,surname:"Jawawi",slug:"dayang-jawawi",fullName:"Dayang Jawawi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of Technology Malaysia",country:{name:"Malaysia"}}},{id:"528",title:"Dr.",name:"Kresimir",middleName:null,surname:"Delac",slug:"kresimir-delac",fullName:"Kresimir Delac",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/528/images/system/528.jpg",biography:"K. Delac received his B.Sc.E.E. degree in 2003 and is currentlypursuing a Ph.D. degree at the University of Zagreb, Faculty of Electrical Engineering andComputing. His current research interests are digital image analysis, pattern recognition andbiometrics.",institutionString:null,institution:{name:"University of Zagreb",country:{name:"Croatia"}}},{id:"557",title:"Dr.",name:"Andon",middleName:"Venelinov",surname:"Topalov",slug:"andon-topalov",fullName:"Andon Topalov",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/557/images/1927_n.jpg",biography:"Dr. Andon V. Topalov received the MSc degree in Control Engineering from the Faculty of Information Systems, Technologies, and Automation at Moscow State University of Civil Engineering (MGGU) in 1979. He then received his PhD degree in Control Engineering from the Department of Automation and Remote Control at Moscow State Mining University (MGSU), Moscow, in 1984. From 1985 to 1986, he was a Research Fellow in the Research Institute for Electronic Equipment, ZZU AD, Plovdiv, Bulgaria. In 1986, he joined the Department of Control Systems, Technical University of Sofia at the Plovdiv campus, where he is presently a Full Professor. He has held long-term visiting Professor/Scholar positions at various institutions in South Korea, Turkey, Mexico, Greece, Belgium, UK, and Germany. And he has coauthored one book and authored or coauthored more than 80 research papers in conference proceedings and journals. His current research interests are in the fields of intelligent control and robotics.",institutionString:null,institution:{name:"Technical University of Sofia",country:{name:"Bulgaria"}}},{id:"585",title:"Prof.",name:"Munir",middleName:null,surname:"Merdan",slug:"munir-merdan",fullName:"Munir Merdan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/585/images/system/585.jpg",biography:"Munir Merdan received the M.Sc. degree in mechanical engineering from the Technical University of Sarajevo, Bosnia and Herzegovina, in 2001, and the Ph.D. degree in electrical engineering from the Vienna University of Technology, Vienna, Austria, in 2009.Since 2005, he has been at the Automation and Control Institute, Vienna University of Technology, where he is currently a Senior Researcher. His research interests include the application of agent technology for achieving agile control in the manufacturing environment.",institutionString:null,institution:null},{id:"605",title:"Prof",name:"Dil",middleName:null,surname:"Hussain",slug:"dil-hussain",fullName:"Dil Hussain",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/605/images/system/605.jpg",biography:"Dr. Dil Muhammad Akbar Hussain is a professor of Electronics Engineering & Computer Science at the Department of Energy Technology, Aalborg University Denmark. Professor Akbar has a Master degree in Digital Electronics from Govt. College University, Lahore Pakistan and a P-hD degree in Control Engineering from the School of Engineering and Applied Sciences, University of Sussex United Kingdom. Aalborg University has Two Satellite Campuses, one in Copenhagen (Aalborg University Copenhagen) and the other in Esbjerg (Aalborg University Esbjerg).\n· He is a member of prestigious IEEE (Institute of Electrical and Electronics Engineers), and IAENG (International Association of Engineers) organizations. \n· He is the chief Editor of the Journal of Software Engineering.\n· He is the member of the Editorial Board of International Journal of Computer Science and Software Technology (IJCSST) and International Journal of Computer Engineering and Information Technology. \n· He is also the Editor of Communication in Computer and Information Science CCIS-20 by Springer.\n· Reviewer For Many Conferences\nHe is the lead person in making collaboration agreements between Aalborg University and many universities of Pakistan, for which the MOU’s (Memorandum of Understanding) have been signed.\nProfessor Akbar is working in Academia since 1990, he started his career as a Lab demonstrator/TA at the University of Sussex. After finishing his P. hD degree in 1992, he served in the Industry as a Scientific Officer and continued his academic career as a visiting scholar for a number of educational institutions. In 1996 he joined National University of Science & Technology Pakistan (NUST) as an Associate Professor; NUST is one of the top few universities in Pakistan. In 1999 he joined an International Company Lineo Inc, Canada as Manager Compiler Group, where he headed the group for developing Compiler Tool Chain and Porting of Operating Systems for the BLACKfin processor. The processor development was a joint venture by Intel and Analog Devices. In 2002 Lineo Inc., was taken over by another company, so he joined Aalborg University Denmark as an Assistant Professor.\nProfessor Akbar has truly a multi-disciplined career and he continued his legacy and making progress in many areas of his interests both in teaching and research. 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being attacked or harmed, either physically or emotionally. In this chapter, it is defined as a possible ability of an individual or a group to face, manage, and anticipate a possible problem. This concept of vulnerability is associated with that of risk factor for social isolation, and therefore to situations that can also lead to illness and lack of mental and physical health. It can have its roots in poverty, in social exclusion, in ethnicity, in disability or simply in disease or specific developmental phases in life. All these aspects reflect very important vulnerability factors among biological, psychological, social, and behavioral variables. To date, no one has highlighted together two critical moments in life in which this brain area undergoes important variations: adolescence, in which its development occurs, and old age, in which this area goes into cognitive decline with the relative loss of many higher cognitive functions. This knowledge can help to better understand the forms of exclusion due to vulnerability in order to develop new forms of social inclusion.",book:{id:"8262",slug:"the-new-forms-of-social-exclusion",title:"The New Forms of Social Exclusion",fullTitle:"The New Forms of Social Exclusion"},signatures:"Rosalba Morese, Sara Palermo, Matteo Defedele, Juri Nervo and Alberto Borraccino",authors:[{id:"214435",title:"Dr.",name:"Rosalba",middleName:null,surname:"Morese",slug:"rosalba-morese",fullName:"Rosalba Morese"},{id:"218983",title:"BSc.",name:"Juri",middleName:null,surname:"Nervo",slug:"juri-nervo",fullName:"Juri Nervo"},{id:"218984",title:"MSc.",name:"Matteo",middleName:null,surname:"Defedele",slug:"matteo-defedele",fullName:"Matteo Defedele"},{id:"233998",title:"Ph.D.",name:"Sara",middleName:null,surname:"Palermo",slug:"sara-palermo",fullName:"Sara Palermo"},{id:"266453",title:"Prof.",name:"Alberto",middleName:null,surname:"Borraccino",slug:"alberto-borraccino",fullName:"Alberto Borraccino"}]},{id:"74550",doi:"10.5772/intechopen.95395",title:"School Conflicts: Causes and Management Strategies in Classroom Relationships",slug:"school-conflicts-causes-and-management-strategies-in-classroom-relationships",totalDownloads:2308,totalCrossrefCites:1,totalDimensionsCites:10,abstract:"Conflicts cannot cease to exist, as they are intrinsic to human beings, forming an integral part of their moral and emotional growth. Likewise, they exist in all schools. The school is inserted in a space where the conflict manifests itself daily and assumes relevance, being the result of the multiple interpersonal relationships that occur in the school context. Thus, conflict is part of school life, which implies that teachers must have the skills to manage conflict constructively. Recognizing the diversity of school conflicts, this chapter aimed to present its causes, highlighting the main ones in the classroom, in the teacher-student relationship. It is important to conflict face and resolve it with skills to manage it properly and constructively, establishing cooperative relationships, and producing integrative solutions. Harmony and appreciation should coexist in a classroom environment and conflict should not interfere, negatively, in the teaching and learning process. This bibliography review underscore the need for during the teachers’ initial training the conflict management skills development.",book:{id:"7827",slug:"interpersonal-relationships",title:"Interpersonal Relationships",fullTitle:"Interpersonal Relationships"},signatures:"Sabina Valente, Abílio Afonso Lourenço and Zsolt Németh",authors:[{id:"324514",title:"Ph.D.",name:"Sabina",middleName:"N.",surname:"Valente",slug:"sabina-valente",fullName:"Sabina Valente"},{id:"326375",title:"Prof.",name:"Abílio Afonso",middleName:"Afonso",surname:"Lourenço",slug:"abilio-afonso-lourenco",fullName:"Abílio Afonso Lourenço"},{id:"329177",title:"Dr.",name:"Zsolt",middleName:null,surname:"Németh",slug:"zsolt-nemeth",fullName:"Zsolt Németh"}]},{id:"55323",doi:"10.5772/intechopen.68873",title:"Positive Psychology: The Use of the Framework of Achievement Bests to Facilitate Personal Flourishing",slug:"positive-psychology-the-use-of-the-framework-of-achievement-bests-to-facilitate-personal-flourishing",totalDownloads:1737,totalCrossrefCites:3,totalDimensionsCites:9,abstract:"The Framework of Achievement Bests, which was recently published in Educational Psychology Review, makes a theoretical contribution to the study of positive psychology. The Framework of Achievement Bests provides an explanatory account of a person’s optimal best practice from his/her actual best. Another aspect emphasizes on the saliency of the psychological process of optimization, which is central to our understanding of person’s optimal functioning in a subject matter. Achieving an exceptional level of best practice (e.g. achieving excellent grades in mathematics) does not exist in isolation, but rather depends on the potent impact of optimization. This chapter, theoretical in nature, focuses on an in‐depth examination of the expansion of the Framework of Achievement Bests. Our discussion of the Framework of Achievement Bests, reflecting a methodical conceptualization, is benchmarked against another notable theory for understanding, namely: Martin Seligman’s PERMA theory. For example, for consideration, one aspect that we examine entails the extent to which the Framework of Achievement Bests could explain the optimization of each of the five components of PERMA (e.g. how does the Framework of Achievement Bests explain the optimization of engagement?).",book:{id:"5761",slug:"quality-of-life-and-quality-of-working-life",title:"Quality of Life and Quality of Working Life",fullTitle:"Quality of Life and Quality of Working Life"},signatures:"Huy P. Phan and Bing H. Ngu",authors:[{id:"196435",title:"Prof.",name:"Huy",middleName:"P",surname:"Phan",slug:"huy-phan",fullName:"Huy Phan"}]},{id:"55349",doi:"10.5772/intechopen.68596",title:"The Development of a Human Well-Being Index for the United States",slug:"the-development-of-a-human-well-being-index-for-the-united-states",totalDownloads:2041,totalCrossrefCites:3,totalDimensionsCites:9,abstract:"The US Environmental Protection Agency (EPA) has developed a human well-being index (HWBI) that assesses the over-all well-being of its population at the county level. The HWBI contains eight domains representing social, economic and environmental well-being. These domains include 25 indicators comprised of 80 metrics and 22 social, economic and environmental services. The application of the HWBI has been made for the nation as a whole at the county level and two alternative applications have been made to represent key populations within the overall US population—Native Americans and children. A number of advances have been made to estimate the values of metrics for counties where no data is available and one such estimator—MERLIN—is discussed. Finally, efforts to make the index into an interactive web site are described.",book:{id:"5761",slug:"quality-of-life-and-quality-of-working-life",title:"Quality of Life and Quality of Working Life",fullTitle:"Quality of Life and Quality of Working Life"},signatures:"J. Kevin Summers, Lisa M. Smith, Linda C. Harwell and Kyle D. Buck",authors:[{id:"197485",title:"Dr.",name:"J. Kevin",middleName:null,surname:"Summers",slug:"j.-kevin-summers",fullName:"J. Kevin Summers"},{id:"197486",title:"Ms.",name:"Lisa",middleName:null,surname:"Smith",slug:"lisa-smith",fullName:"Lisa Smith"},{id:"197487",title:"Ms.",name:"Linda",middleName:null,surname:"Harwell",slug:"linda-harwell",fullName:"Linda Harwell"},{id:"197488",title:"Dr.",name:"Kyle",middleName:null,surname:"Buck",slug:"kyle-buck",fullName:"Kyle Buck"}]},{id:"56529",doi:"10.5772/intechopen.70237",title:"Well-being and Quality of Working Life of University Professors in Brazil",slug:"well-being-and-quality-of-working-life-of-university-professors-in-brazil",totalDownloads:1676,totalCrossrefCites:2,totalDimensionsCites:6,abstract:"This chapter presents a study about the perceptions on quality of working life (QWL) regarding factors and indicator in two public universities in Brazil. It aimed also to analyze their perceptions about university working conditions. This exploratory study is based on quantitative and qualitative analyses. A sample of 715 university professors participated on the research. Data collection was carried out in two steps: online survey and focus groups. There is a moderate negative correlation between psychological well-being and work-related stress. Emotional charge also presents a moderate positive correlation with work-related stress, as well as physical charge and psychological distress. Work-life balance is negatively correlated with physical charge, emotional charge, work-related stress, psychological distress, and burnout. We observed also that 43.6% of the professors reported high levels of work-related stress in their everyday work. The precariousness of university teaching is associated with three main elements, which we defined as the tripod of the precarization of university teaching work. It consists of academic productivism, excess of administrative work and bureaucratic activities, and inadequate working conditions. The operating dynamics of this tripod effect professors’ well-being, their QWL, and even the quality of the work they develop in public universities.",book:{id:"5761",slug:"quality-of-life-and-quality-of-working-life",title:"Quality of Life and Quality of Working Life",fullTitle:"Quality of Life and Quality of Working Life"},signatures:"Alessandro Vinicius de Paula and Ana Alice Vilas Boas",authors:[{id:"175373",title:"Dr.",name:"Ana Alice",middleName:null,surname:"Vilas Boas",slug:"ana-alice-vilas-boas",fullName:"Ana Alice Vilas Boas"},{id:"196534",title:"Dr.",name:"Alessandro Vinicius",middleName:null,surname:"De Paula",slug:"alessandro-vinicius-de-paula",fullName:"Alessandro Vinicius De Paula"}]}],mostDownloadedChaptersLast30Days:[{id:"74550",title:"School Conflicts: Causes and Management Strategies in Classroom Relationships",slug:"school-conflicts-causes-and-management-strategies-in-classroom-relationships",totalDownloads:2328,totalCrossrefCites:1,totalDimensionsCites:10,abstract:"Conflicts cannot cease to exist, as they are intrinsic to human beings, forming an integral part of their moral and emotional growth. Likewise, they exist in all schools. The school is inserted in a space where the conflict manifests itself daily and assumes relevance, being the result of the multiple interpersonal relationships that occur in the school context. Thus, conflict is part of school life, which implies that teachers must have the skills to manage conflict constructively. Recognizing the diversity of school conflicts, this chapter aimed to present its causes, highlighting the main ones in the classroom, in the teacher-student relationship. It is important to conflict face and resolve it with skills to manage it properly and constructively, establishing cooperative relationships, and producing integrative solutions. Harmony and appreciation should coexist in a classroom environment and conflict should not interfere, negatively, in the teaching and learning process. This bibliography review underscore the need for during the teachers’ initial training the conflict management skills development.",book:{id:"7827",slug:"interpersonal-relationships",title:"Interpersonal Relationships",fullTitle:"Interpersonal Relationships"},signatures:"Sabina Valente, Abílio Afonso Lourenço and Zsolt Németh",authors:[{id:"324514",title:"Ph.D.",name:"Sabina",middleName:"N.",surname:"Valente",slug:"sabina-valente",fullName:"Sabina Valente"},{id:"326375",title:"Prof.",name:"Abílio Afonso",middleName:"Afonso",surname:"Lourenço",slug:"abilio-afonso-lourenco",fullName:"Abílio Afonso Lourenço"},{id:"329177",title:"Dr.",name:"Zsolt",middleName:null,surname:"Németh",slug:"zsolt-nemeth",fullName:"Zsolt Németh"}]},{id:"76968",title:"In the Darkness of This Time: Wittgenstein and Freud on Uncertainty",slug:"in-the-darkness-of-this-time-wittgenstein-and-freud-on-uncertainty",totalDownloads:461,totalCrossrefCites:0,totalDimensionsCites:0,abstract:"Both Wittgenstein and Freud experienced the crisis of humanism resulting from the first and second world wars. Although they were both considered to be influential figures, they hardly investigated the ways in which people could cope with the consequences of these crises. However, Wittgenstein and Freud did suggest ways of understanding uncertainties caused by real life events, as well as by the nature of human thought processes. This article will explore the therapeutic ways of dealing with uncertainties common to both thinkers and the different concepts facilitating their methodologies. The central contention of this article is that both Wittgenstein and Freud developed a complex methodology, acknowledging the constant and unexpected changes humans have deal with, whilst also offering the possibility of defining “hinge propositions” and “language-games” which can stabilize our consciousness.",book:{id:"10814",slug:"anxiety-uncertainty-and-resilience-during-the-pandemic-period-anthropological-and-psychological-perspectives",title:"Anxiety, Uncertainty, and Resilience During the Pandemic Period",fullTitle:"Anxiety, Uncertainty, and Resilience During the Pandemic Period - Anthropological and Psychological Perspectives"},signatures:"Dorit Lemberger",authors:[{id:"325725",title:"Dr.",name:"Dorit",middleName:null,surname:"Lemberger",slug:"dorit-lemberger",fullName:"Dorit Lemberger"}]},{id:"76565",title:"Introductory Chapter: The Transition from Distress to Acceptance of Human Frailty - Anthropology and Psychology of the Pandemic Era",slug:"introductory-chapter-the-transition-from-distress-to-acceptance-of-human-frailty-anthropology-and-ps",totalDownloads:393,totalCrossrefCites:0,totalDimensionsCites:0,abstract:null,book:{id:"10814",slug:"anxiety-uncertainty-and-resilience-during-the-pandemic-period-anthropological-and-psychological-perspectives",title:"Anxiety, Uncertainty, and Resilience During the Pandemic Period",fullTitle:"Anxiety, Uncertainty, and Resilience During the Pandemic Period - Anthropological and Psychological Perspectives"},signatures:"Fabio Gabrielli and Floriana Irtelli",authors:[{id:"174641",title:"Dr.",name:"Floriana",middleName:null,surname:"Irtelli",slug:"floriana-irtelli",fullName:"Floriana Irtelli"},{id:"259407",title:"Prof.",name:"Fabio",middleName:null,surname:"Gabrielli",slug:"fabio-gabrielli",fullName:"Fabio Gabrielli"}]},{id:"77214",title:"The Impact of the COVID-19 Pandemic on the Mental Health of Dentists",slug:"the-impact-of-the-covid-19-pandemic-on-the-mental-health-of-dentists",totalDownloads:390,totalCrossrefCites:1,totalDimensionsCites:1,abstract:"Since March 2020, the COVID-19 disease has declared a pandemic producing a worldwide containment. For months, many people were subjected to strict social isolation away from family and loved ones to prevent disease transmission, leading to anxiety, fear, and depression. On the other hand, many had to close down their businesses and stop working, resulting in financial issues. Previous studies have reported that pandemics, epidemics, and some diseases can lead to mental disorders such as fear, anxiety, stress, and depression. Among those most affected, healthcare workers (HCWs), especially those on the front line, often develop mental health problems. Although there is data available on the management and care of HCWs, little attention has been paid to the mental health and well-being of dentists during the COVID-19 pandemic. Therefore, this chapter aims to review the impact of the COVID-19 pandemic on dentists’ mental health and mental health-related symptoms. Finally, to recommend specific measures to avoid consequent potential implications for dentists, dental students, and dental patients.",book:{id:"10814",slug:"anxiety-uncertainty-and-resilience-during-the-pandemic-period-anthropological-and-psychological-perspectives",title:"Anxiety, Uncertainty, and Resilience During the Pandemic Period",fullTitle:"Anxiety, Uncertainty, and Resilience During the Pandemic Period - Anthropological and Psychological Perspectives"},signatures:"Andrea Vergara-Buenaventura and Carmen Castro-Ruiz",authors:[{id:"346660",title:"M.Sc.",name:"Andrea",middleName:null,surname:"Vergara-Buenaventura",slug:"andrea-vergara-buenaventura",fullName:"Andrea Vergara-Buenaventura"},{id:"419814",title:"MSc.",name:"Carmen",middleName:null,surname:"Castro-Ruiz",slug:"carmen-castro-ruiz",fullName:"Carmen Castro-Ruiz"}]},{id:"55323",title:"Positive Psychology: The Use of the Framework of Achievement Bests to Facilitate Personal Flourishing",slug:"positive-psychology-the-use-of-the-framework-of-achievement-bests-to-facilitate-personal-flourishing",totalDownloads:1748,totalCrossrefCites:3,totalDimensionsCites:9,abstract:"The Framework of Achievement Bests, which was recently published in Educational Psychology Review, makes a theoretical contribution to the study of positive psychology. The Framework of Achievement Bests provides an explanatory account of a person’s optimal best practice from his/her actual best. Another aspect emphasizes on the saliency of the psychological process of optimization, which is central to our understanding of person’s optimal functioning in a subject matter. Achieving an exceptional level of best practice (e.g. achieving excellent grades in mathematics) does not exist in isolation, but rather depends on the potent impact of optimization. This chapter, theoretical in nature, focuses on an in‐depth examination of the expansion of the Framework of Achievement Bests. Our discussion of the Framework of Achievement Bests, reflecting a methodical conceptualization, is benchmarked against another notable theory for understanding, namely: Martin Seligman’s PERMA theory. For example, for consideration, one aspect that we examine entails the extent to which the Framework of Achievement Bests could explain the optimization of each of the five components of PERMA (e.g. how does the Framework of Achievement Bests explain the optimization of engagement?).",book:{id:"5761",slug:"quality-of-life-and-quality-of-working-life",title:"Quality of Life and Quality of Working Life",fullTitle:"Quality of Life and Quality of Working Life"},signatures:"Huy P. Phan and Bing H. 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Topics will include general overviews of infections, immunopathology, diagnosis, treatment, epidemiology, etiology, and current clinical recommendations for managing infectious diseases. Ongoing issues, recent advances, and future diagnostic approaches and therapeutic strategies will also be discussed. This book series will focus on various aspects and properties of infectious diseases whose deep understanding is essential for safeguarding the human race from losing resources and economies due to pathogens.",coverUrl:"https://cdn.intechopen.com/series/covers/6.jpg",latestPublicationDate:"August 2nd, 2022",hasOnlineFirst:!0,numberOfPublishedBooks:13,editor:{id:"131400",title:"Prof.",name:"Alfonso J.",middleName:null,surname:"Rodriguez-Morales",slug:"alfonso-j.-rodriguez-morales",fullName:"Alfonso J. 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He is an External Professor, Master in Research on Tropical Medicine and International Health, Universitat de Barcelona, Spain. He is also a professor at the Master in Clinical Epidemiology and Biostatistics, Universidad Científica del Sur, Lima, Peru. In 2021 he has been awarded the “Raul Isturiz Award” Medal of the API. Also, in 2021, he was awarded with the “Jose Felix Patiño” Asclepius Staff Medal of the Colombian Medical College, due to his scientific contributions to COVID-19 during the pandemic. He is currently the Editor in Chief of the journal Travel Medicine and Infectious Diseases. His Scopus H index is 47 (Google Scholar H index, 68).",institutionString:"Institución Universitaria Visión de las Américas, Colombia",institution:null},editorTwo:null,editorThree:null},subseries:{paginationCount:5,paginationItems:[{id:"3",title:"Bacterial Infectious Diseases",coverUrl:"https://cdn.intechopen.com/series_topics/covers/3.jpg",editor:{id:"205604",title:"Dr.",name:"Tomas",middleName:null,surname:"Jarzembowski",slug:"tomas-jarzembowski",fullName:"Tomas Jarzembowski",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRKriQAG/Profile_Picture_2022-06-16T11:01:31.jpg",biography:"Tomasz Jarzembowski was born in 1968 in Gdansk, Poland. He obtained his Ph.D. degree in 2000 from the Medical University of Gdańsk (UG). After specialization in clinical microbiology in 2003, he started studying biofilm formation and antibiotic resistance at the single-cell level. In 2015, he obtained his D.Sc. degree. His later study in cooperation with experts in nephrology and immunology resulted in the designation of the new diagnostic method of UTI, patented in 2017. He is currently working at the Department of Microbiology, Medical University of Gdańsk (GUMed), Poland. Since many years, he is a member of steering committee of Gdańsk branch of Polish Society of Microbiologists, a member of ESCMID. He is also a reviewer and a member of editorial boards of a number of international journals.",institutionString:"Medical University of Gdańsk, Poland",institution:null},editorTwo:{id:"484980",title:"Dr.",name:"Katarzyna",middleName:null,surname:"Garbacz",slug:"katarzyna-garbacz",fullName:"Katarzyna Garbacz",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y00003St8TAQAZ/Profile_Picture_2022-07-07T09:45:16.jpg",biography:"Katarzyna Maria Garbacz, MD, is an Associate Professor at the Medical University of Gdańsk, Poland and she is head of the Department of Oral Microbiology of the Medical University of Gdańsk. She has published more than 50 scientific publications in peer-reviewed journals. She has been a project leader funded by the National Science Centre of Poland. Prof. Garbacz is a microbiologist working on applied and fundamental questions in microbial epidemiology and pathogenesis. Her research interest is in antibiotic resistance, host-pathogen interaction, and therapeutics development for staphylococcal pathogens, mainly Staphylococcus aureus, which causes hospital-acquired infections. 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Completed the Course Medical Mycology, the Centraalbureau voor Schimmelcultures (CBS), Fungal Biodiversity Centre, Netherlands (2006). International Union of Microbiological Societies (IUMS) Fellow, and International Emerging Infectious Diseases (IEID) Fellow, Centers for Diseases Control and Prevention (CDC), Atlanta, USA. Diploma of Dermatological Scientist, Japanese Society for Investigative Dermatology. Ph.D. of Juntendo University, Japan. Bachelor’s and Master’s degree, Medicine, West China University of Medical Sciences. Chair of Sichuan Medical Association Dermatology Committee. General Secretary of The 19th Annual Meeting of Chinese Society of Dermatology and the Asia Pacific Society for Medical Mycology (2013). In charge of the Annual Medical Mycology Course over 20-years authorized by National Continue Medical Education Committee of China. Member of the board of directors of the Asia-Pacific Society for Medical Mycology (APSMM). Associate editor of Mycopathologia. 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Dr. Saxena is a fellow of various international societies/academies including the Royal College of Pathologists, United Kingdom; Royal Society of Medicine, London; Royal Society of Biology, United Kingdom; Royal Society of Chemistry, London; and Academy of Translational Medicine Professionals, Austria. He was named a Global Leader in Science by The Scientist. 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Empirical Evidence from an Emerging Economy",doi:"10.5772/intechopen.105589",signatures:"Bishnu Kumar Adhikary and Ranjan Kumar Mitra",slug:"does-board-structure-matter-in-csr-spending-of-commercial-banks-empirical-evidence-from-an-emerging-",totalDownloads:18,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Corporate Social Responsibility",coverURL:"https://cdn.intechopen.com/books/images_new/11602.jpg",subseries:{id:"86",title:"Business and Management"}}}]},overviewPagePublishedBooks:{paginationCount:1,paginationItems:[{type:"book",id:"11392",title:"Leadership in a Changing World",subtitle:"A Multidimensional Perspective",coverURL:"https://cdn.intechopen.com/books/images_new/11392.jpg",slug:"leadership-in-a-changing-world-a-multidimensional-perspective",publishedDate:"May 11th 2022",editedByType:"Edited by",bookSignature:"Muhammad Mohiuddin, Bilal Khalid, Md. 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She is now a lecturer at the University of Witwatersrand, South Africa, and a principal researcher at the Health Economics and Epidemiology Research Office (HE2RO), South Africa. Dr. Moolla holds a Ph.D. in Psychology with her research being focused on mental health and resilience. In her professional work capacity, her research has further expanded into the fields of early childhood development, mental health, the HIV and TB care cascades, as well as COVID. She is also a UNESCO-trained International Bioethics Facilitator.",institutionString:"University of the Witwatersrand",institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"419588",title:"Ph.D.",name:"Sergio",middleName:"Alexandre",surname:"Gehrke",slug:"sergio-gehrke",fullName:"Sergio Gehrke",position:null,profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0033Y000038WgMKQA0/Profile_Picture_2022-06-02T11:44:20.jpg",biography:"Dr. Sergio Alexandre Gehrke is a doctorate holder in two fields. The first is a Ph.D. in Cellular and Molecular Biology from the Pontificia Catholic University, Porto Alegre, Brazil, in 2010 and the other is an International Ph.D. in Bioengineering from the Universidad Miguel Hernandez, Elche/Alicante, Spain, obtained in 2020. In 2018, he completed a postdoctoral fellowship in Materials Engineering in the NUCLEMAT of the Pontificia Catholic University, Porto Alegre, Brazil. He is currently the Director of the Postgraduate Program in Implantology of the Bioface/UCAM/PgO (Montevideo, Uruguay), Director of the Cathedra of Biotechnology of the Catholic University of Murcia (Murcia, Spain), an Extraordinary Full Professor of the Catholic University of Murcia (Murcia, Spain) as well as the Director of the private center of research Biotecnos – Technology and Science (Montevideo, Uruguay). Applied biomaterials, cellular and molecular biology, and dental implants are among his research interests. He has published several original papers in renowned journals. In addition, he is also a Collaborating Professor in several Postgraduate programs at different universities all over the world.",institutionString:null,institution:{name:"Universidad Católica San Antonio de Murcia",country:{name:"Spain"}}},{id:"342152",title:"Dr.",name:"Santo",middleName:null,surname:"Grace Umesh",slug:"santo-grace-umesh",fullName:"Santo Grace Umesh",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/342152/images/16311_n.jpg",biography:null,institutionString:null,institution:{name:"SRM Dental College",country:{name:"India"}}},{id:"333647",title:"Dr.",name:"Shreya",middleName:null,surname:"Kishore",slug:"shreya-kishore",fullName:"Shreya Kishore",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/333647/images/14701_n.jpg",biography:"Dr. Shreya Kishore completed her Bachelor in Dental Surgery in Chettinad Dental College and Research Institute, Chennai, and her Master of Dental Surgery (Orthodontics) in Saveetha Dental College, Chennai. She is also Invisalign certified. She’s working as a Senior Lecturer in the Department of Orthodontics, SRM Dental College since November 2019. She is actively involved in teaching orthodontics to the undergraduates and the postgraduates. Her clinical research topics include new orthodontic brackets, fixed appliances and TADs. She’s published 4 articles in well renowned indexed journals and has a published patency of her own. Her private practice is currently limited to orthodontics and works as a consultant in various clinics.",institutionString:null,institution:{name:"SRM Dental College",country:{name:"India"}}},{id:"323731",title:"Prof.",name:"Deepak M.",middleName:"Macchindra",surname:"Vikhe",slug:"deepak-m.-vikhe",fullName:"Deepak M. Vikhe",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/323731/images/13613_n.jpg",biography:"Dr Deepak M.Vikhe .\n\n\t\n\tDr Deepak M.Vikhe , completed his Masters & PhD in Prosthodontics from Rural Dental College, Loni securing third rank in the Pravara Institute of Medical Sciences Deemed University. He was awarded Dr.G.C.DAS Memorial Award for Research on Implants at 39th IPS conference Dubai (U A E).He has two patents under his name. He has received Dr.Saraswati medal award for best research for implant study in 2017.He has received Fully funded scholarship to Spain ,university of Santiago de Compostela. He has completed fellowship in Implantlogy from Noble Biocare. \nHe has attended various conferences and CDE programmes and has national publications to his credit. His field of interest is in Implant supported prosthesis. Presently he is working as a associate professor in the Dept of Prosthodontics, Rural Dental College, Loni and maintains a successful private practice specialising in Implantology at Rahata.\n\nEmail: drdeepak_mvikhe@yahoo.com..................",institutionString:null,institution:{name:"Pravara Institute of Medical Sciences",country:{name:"India"}}},{id:"204110",title:"Dr.",name:"Ahmed A.",middleName:null,surname:"Madfa",slug:"ahmed-a.-madfa",fullName:"Ahmed A. Madfa",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/204110/images/system/204110.jpg",biography:"Dr. Madfa is currently Associate Professor of Endodontics at Thamar University and a visiting lecturer at Sana'a University and University of Sciences and Technology. He has more than 6 years of experience in teaching. His research interests include root canal morphology, functionally graded concept, dental biomaterials, epidemiology and dental education, biomimetic restoration, finite element analysis and endodontic regeneration. Dr. Madfa has numerous international publications, full articles, two patents, a book and a book chapter. Furthermore, he won 14 international scientific awards. Furthermore, he is involved in many academic activities ranging from editorial board member, reviewer for many international journals and postgraduate students' supervisor. Besides, I deliver many courses and training workshops at various scientific events. Dr. Madfa also regularly attends international conferences and holds administrative positions (Deputy Dean of the Faculty for Students’ & Academic Affairs and Deputy Head of Research Unit).",institutionString:"Thamar University",institution:null},{id:"210472",title:"Dr.",name:"Nermin",middleName:"Mohammed Ahmed",surname:"Yussif",slug:"nermin-yussif",fullName:"Nermin Yussif",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/210472/images/system/210472.jpg",biography:"Dr. Nermin Mohammed Ahmed Yussif is working at the Faculty of dentistry, University for October university for modern sciences and arts (MSA). Her areas of expertise include: periodontology, dental laserology, oral implantology, periodontal plastic surgeries, oral mesotherapy, nutrition, dental pharmacology. She is an editor and reviewer in numerous international journals.",institutionString:"MSA University",institution:null},{id:"204606",title:"Dr.",name:"Serdar",middleName:null,surname:"Gözler",slug:"serdar-gozler",fullName:"Serdar Gözler",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/204606/images/system/204606.jpeg",biography:"Dr. Serdar Gözler has completed his undergraduate studies at the Marmara University Faculty of Dentistry in 1978, followed by an assistantship in the Prosthesis Department of Dicle University Faculty of Dentistry. Starting his PhD work on non-resilient overdentures with Assoc. Prof. Hüsnü Yavuzyılmaz, he continued his studies with Prof. Dr. Gürbüz Öztürk of Istanbul University Faculty of Dentistry Department of Prosthodontics, this time on Gnatology. He attended training programs on occlusion, neurology, neurophysiology, EMG, radiology and biostatistics. In 1982, he presented his PhD thesis \\Gerber and Lauritzen Occlusion Analysis Techniques: Diagnosis Values,\\ at Istanbul University School of Dentistry, Department of Prosthodontics. As he was also working with Prof. Senih Çalıkkocaoğlu on The Physiology of Chewing at the same time, Gözler has written a chapter in Çalıkkocaoğlu\\'s book \\Complete Prostheses\\ entitled \\The Place of Neuromuscular Mechanism in Prosthetic Dentistry.\\ The book was published five times since by the Istanbul University Publications. Having presented in various conferences about occlusion analysis until 1998, Dr. Gözler has also decided to use the T-Scan II occlusion analysis method. Having been personally trained by Dr. Robert Kerstein on this method, Dr. Gözler has been lecturing on the T-Scan Occlusion Analysis Method in conferences both in Turkey and abroad. Dr. Gözler has various articles and presentations on Digital Occlusion Analysis methods. He is now Head of the TMD Clinic at Prosthodontic Department of Faculty of Dentistry , Istanbul Aydın University , Turkey.",institutionString:"Istanbul Aydin University",institution:{name:"Istanbul Aydın University",country:{name:"Turkey"}}},{id:"256417",title:"Associate Prof.",name:"Sanaz",middleName:null,surname:"Sadry",slug:"sanaz-sadry",fullName:"Sanaz Sadry",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/256417/images/8106_n.jpg",biography:null,institutionString:null,institution:{name:"Istanbul Aydın University",country:{name:"Turkey"}}},{id:"240870",title:"Ph.D.",name:"Alaa Eddin Omar",middleName:null,surname:"Al Ostwani",slug:"alaa-eddin-omar-al-ostwani",fullName:"Alaa Eddin Omar Al Ostwani",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/240870/images/system/240870.jpeg",biography:"Dr. Al Ostwani Alaa Eddin Omar received his Master in dentistry from Damascus University in 2010, and his Ph.D. in Pediatric Dentistry from Damascus University in 2014. Dr. Al Ostwani is an assistant professor and faculty member at IUST University since 2014. \nDuring his academic experience, he has received several awards including the scientific research award from the Union of Arab Universities, the Syrian gold medal and the international gold medal for invention and creativity. Dr. Al Ostwani is a Member of the International Association of Dental Traumatology and the Syrian Society for Research and Preventive Dentistry since 2017. He is also a Member of the Reviewer Board of International Journal of Dental Medicine (IJDM), and the Indian Journal of Conservative and Endodontics since 2016.",institutionString:"International University for Science and Technology.",institution:{name:"Islamic University of Science and Technology",country:{name:"India"}}},{id:"42847",title:"Dr.",name:"Belma",middleName:null,surname:"Işik Aslan",slug:"belma-isik-aslan",fullName:"Belma Işik Aslan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/42847/images/system/42847.jpg",biography:"Dr. Belma IşIk Aslan was born in 1976 in Ankara-TURKEY. After graduating from TED Ankara College in 1994, she attended to Gazi University, Faculty of Dentistry in Ankara. She completed her PhD in orthodontic education at Gazi University between 1999-2005. Dr. Işık Aslan stayed at the Providence Hospital Craniofacial Institude and Reconstructive Surgery in Michigan, USA for three months as an observer. She worked as a specialist doctor at Gazi University, Dentistry Faculty, Department of Orthodontics between 2005-2014. She was appointed as associate professor in January, 2014 and as professor in 2021. Dr. Işık Aslan still works as an instructor at the same faculty. She has published a total of 35 articles, 10 book chapters, 39 conference proceedings both internationally and nationally. Also she was the academic editor of the international book 'Current Advances in Orthodontics'. She is a member of the Turkish Orthodontic Society and Turkish Cleft Lip and Palate Society. She is married and has 2 children. Her knowledge of English is at an advanced level.",institutionString:"Gazi University Dentistry Faculty Department of Orthodontics",institution:null},{id:"202198",title:"Dr.",name:"Buket",middleName:null,surname:"Aybar",slug:"buket-aybar",fullName:"Buket Aybar",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/202198/images/6955_n.jpg",biography:"Buket Aybar, DDS, PhD, was born in 1971. She graduated from Istanbul University, Faculty of Dentistry, in 1992 and completed her PhD degree on Oral and Maxillofacial Surgery in Istanbul University in 1997.\r\nDr. Aybar is currently a full-time professor in Istanbul University, Faculty of Dentistry Department of Oral and Maxillofacial Surgery. She has teaching responsibilities in graduate and postgraduate programs. Her clinical practice includes mainly dentoalveolar surgery.\r\nHer topics of interest are biomaterials science and cell culture studies. She has many articles in international and national scientific journals and chapters in books; she also has participated in several scientific projects supported by Istanbul University Research fund.",institutionString:null,institution:{name:"Marmara University",country:{name:"Turkey"}}},{id:"178412",title:"Associate Prof.",name:"Guhan",middleName:null,surname:"Dergin",slug:"guhan-dergin",fullName:"Guhan Dergin",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/178412/images/6954_n.jpg",biography:"Assoc. Prof. Dr. Gühan Dergin was born in 1973 in Izmit. He graduated from Marmara University Faculty of Dentistry in 1999. He completed his specialty of OMFS surgery in Marmara University Faculty of Dentistry and obtained his PhD degree in 2006. In 2005, he was invited as a visiting doctor in the Oral and Maxillofacial Surgery Department of the University of North Carolina, USA, where he went on a scholarship. Dr. Dergin still continues his academic career as an associate professor in Marmara University Faculty of Dentistry. He has many articles in international and national scientific journals and chapters in books.",institutionString:null,institution:{name:"Marmara University",country:{name:"Turkey"}}},{id:"178414",title:"Prof.",name:"Yusuf",middleName:null,surname:"Emes",slug:"yusuf-emes",fullName:"Yusuf Emes",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/178414/images/6953_n.jpg",biography:"Born in Istanbul in 1974, Dr. Emes graduated from Istanbul University Faculty of Dentistry in 1997 and completed his PhD degree in Istanbul University faculty of Dentistry Department of Oral and Maxillofacial Surgery in 2005. He has papers published in international and national scientific journals, including research articles on implantology, oroantral fistulas, odontogenic cysts, and temporomandibular disorders. Dr. Emes is currently working as a full-time academic staff in Istanbul University faculty of Dentistry Department of Oral and Maxillofacial Surgery.",institutionString:null,institution:{name:"Istanbul University",country:{name:"Turkey"}}},{id:"192229",title:"Ph.D.",name:"Ana Luiza",middleName:null,surname:"De Carvalho Felippini",slug:"ana-luiza-de-carvalho-felippini",fullName:"Ana Luiza De Carvalho Felippini",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/192229/images/system/192229.jpg",biography:null,institutionString:"University of São Paulo",institution:{name:"University of Sao Paulo",country:{name:"Brazil"}}},{id:"256851",title:"Prof.",name:"Ayşe",middleName:null,surname:"Gülşen",slug:"ayse-gulsen",fullName:"Ayşe Gülşen",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/256851/images/9696_n.jpg",biography:"Dr. Ayşe Gülşen graduated in 1990 from Faculty of Dentistry, University of Ankara and did a postgraduate program at University of Gazi. \nShe worked as an observer and research assistant in Craniofacial Surgery Departments in New York, Providence Hospital in Michigan and Chang Gung Memorial Hospital in Taiwan. \nShe works as Craniofacial Orthodontist in Department of Aesthetic, Plastic and Reconstructive Surgery, Faculty of Medicine, University of Gazi, Ankara Turkey since 2004.",institutionString:"Orthodontist, Assoc Prof in the Department of Aesthetic, Plastic and Reconstructive Surgery, Faculty of Medicine, University of Gazi",institution:null},{id:"255366",title:"Prof.",name:"Tosun",middleName:null,surname:"Tosun",slug:"tosun-tosun",fullName:"Tosun Tosun",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/255366/images/7347_n.jpg",biography:"Graduated at the Faculty of Dentistry, University of Istanbul, Turkey in 1989;\nVisitor Assistant at the University of Padua, Italy and Branemark Osseointegration Center of Treviso, Italy between 1993-94;\nPhD thesis on oral implantology in University of Istanbul and was awarded the academic title “Dr.med.dent.”, 1997;\nHe was awarded the academic title “Doç.Dr.” (Associated Professor) in 2003;\nProficiency in Botulinum Toxin Applications, Reading-UK in 2009;\nMastership, RWTH Certificate in Laser Therapy in Dentistry, AALZ-Aachen University, Germany 2009-11;\nMaster of Science (MSc) in Laser Dentistry, University of Genoa, Italy 2013-14.\n\nDr.Tosun worked as Research Assistant in the Department of Oral Implantology, Faculty of Dentistry, University of Istanbul between 1990-2002. \nHe worked part-time as Consultant surgeon in Harvard Medical International Hospitals and John Hopkins Medicine, Istanbul between years 2007-09.\u2028He was contract Professor in the Department of Surgical and Diagnostic Sciences (DI.S.C.), Medical School, University of Genova, Italy between years 2011-16. \nSince 2015 he is visiting Professor at Medical School, University of Plovdiv, Bulgaria. \nCurrently he is Associated Prof.Dr. at the Dental School, Oral Surgery Dept., Istanbul Aydin University and since 2003 he works in his own private clinic in Istanbul, Turkey.\u2028\nDr.Tosun is reviewer in journal ‘Laser in Medical Sciences’, reviewer in journal ‘Folia Medica\\', a Fellow of the International Team for Implantology, Clinical Lecturer of DGZI German Association of Oral Implantology, Expert Lecturer of Laser&Health Academy, Country Representative of World Federation for Laser Dentistry, member of European Federation of Periodontology, member of Academy of Laser Dentistry. Dr.Tosun presents papers in international and national congresses and has scientific publications in international and national journals. He speaks english, spanish, italian and french.",institutionString:null,institution:{name:"Istanbul Aydın University",country:{name:"Turkey"}}},{id:"260116",title:"Dr.",name:"Mehmet",middleName:null,surname:"Yaltirik",slug:"mehmet-yaltirik",fullName:"Mehmet Yaltirik",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/260116/images/7413_n.jpg",biography:"Birth Date 25.09.1965\r\nBirth Place Adana- Turkey\r\nSex Male\r\nMarrial Status Bachelor\r\nDriving License Acquired\r\nMother Tongue Turkish\r\n\r\nAddress:\r\nWork:University of Istanbul,Faculty of Dentistry, Department of Oral Surgery and Oral Medicine 34093 Capa,Istanbul- TURKIYE",institutionString:null,institution:{name:"Istanbul University",country:{name:"Turkey"}}},{id:"171887",title:"Prof.",name:"Zühre",middleName:null,surname:"Akarslan",slug:"zuhre-akarslan",fullName:"Zühre Akarslan",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/171887/images/system/171887.jpg",biography:"Zühre Akarslan was born in 1977 in Cyprus. She graduated from Gazi University Faculty of Dentistry, Ankara, Turkey in 2000. \r\nLater she received her Ph.D. degree from the Oral Diagnosis and Radiology Department; which was recently renamed as Oral and Dentomaxillofacial Radiology, from the same university. \r\nShe is working as a full-time Associate Professor and is a lecturer and an academic researcher. \r\nHer expertise areas are dental caries, cancer, dental fear and anxiety, gag reflex in dentistry, oral medicine, and dentomaxillofacial radiology.",institutionString:"Gazi University",institution:{name:"Gazi University",country:{name:"Turkey"}}},{id:"272237",title:"Dr.",name:"Pinar",middleName:"Kiymet",surname:"Karataban",slug:"pinar-karataban",fullName:"Pinar Karataban",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/272237/images/8911_n.png",biography:"Assist.Prof.Dr.Pınar Kıymet Karataban, DDS PhD \n\nDr.Pınar Kıymet Karataban was born in Istanbul in 1975. After her graduation from Marmara University Faculty of Dentistry in 1998 she started her PhD in Paediatric Dentistry focused on children with special needs; mainly children with Cerebral Palsy. She finished her pHD thesis entitled \\'Investigation of occlusion via cast analysis and evaluation of dental caries prevalance, periodontal status and muscle dysfunctions in children with cerebral palsy” in 2008. She got her Assist. Proffessor degree in Istanbul Aydın University Paediatric Dentistry Department in 2015-2018. ın 2019 she started her new career in Bahcesehir University, Istanbul as Head of Department of Pediatric Dentistry. In 2020 she was accepted to BAU International University, Batumi as Professor of Pediatric Dentistry. She’s a lecturer in the same university meanwhile working part-time in private practice in Ege Dental Studio (https://www.egedisklinigi.com/) a multidisciplinary dental clinic in Istanbul. Her main interests are paleodontology, ancient and contemporary dentistry, oral microbiology, cerebral palsy and special care dentistry. She has national and international publications, scientific reports and is a member of IAPO (International Association for Paleodontology), IADH (International Association of Disability and Oral Health) and EAPD (European Association of Pediatric Dentistry).",institutionString:null,institution:null},{id:"172009",title:"Dr.",name:"Fatma Deniz",middleName:null,surname:"Uzuner",slug:"fatma-deniz-uzuner",fullName:"Fatma Deniz Uzuner",position:null,profilePictureURL:"https://mts.intechopen.com/storage/users/172009/images/7122_n.jpg",biography:"Dr. Deniz Uzuner was born in 1969 in Kocaeli-TURKEY. After graduating from TED Ankara College in 1986, she attended the Hacettepe University, Faculty of Dentistry in Ankara. \nIn 1993 she attended the Gazi University, Faculty of Dentistry, Department of Orthodontics for her PhD education. After finishing the PhD education, she worked as orthodontist in Ankara Dental Hospital under the Turkish Government, Ministry of Health and in a special Orthodontic Clinic till 2011. Between 2011 and 2016, Dr. Deniz Uzuner worked as a specialist in the Department of Orthodontics, Faculty of Dentistry, Gazi University in Ankara/Turkey. In 2016, she was appointed associate professor. Dr. Deniz Uzuner has authored 23 Journal Papers, 3 Book Chapters and has had 39 oral/poster presentations. She is a member of the Turkish Orthodontic Society. Her knowledge of English is at an advanced level.",institutionString:null,institution:null},{id:"332914",title:"Dr.",name:"Muhammad Saad",middleName:null,surname:"Shaikh",slug:"muhammad-saad-shaikh",fullName:"Muhammad Saad Shaikh",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Jinnah Sindh Medical University",country:{name:"Pakistan"}}},{id:"315775",title:"Dr.",name:"Feng",middleName:null,surname:"Luo",slug:"feng-luo",fullName:"Feng Luo",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Sichuan University",country:{name:"China"}}},{id:"344229",title:"Dr.",name:"Sankeshan",middleName:null,surname:"Padayachee",slug:"sankeshan-padayachee",fullName:"Sankeshan Padayachee",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"315727",title:"Ms.",name:"Kelebogile A.",middleName:null,surname:"Mothupi",slug:"kelebogile-a.-mothupi",fullName:"Kelebogile A. Mothupi",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"423519",title:"Dr.",name:"Sizakele",middleName:null,surname:"Ngwenya",slug:"sizakele-ngwenya",fullName:"Sizakele Ngwenya",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"337613",title:"Mrs.",name:"Tshakane",middleName:null,surname:"R.M.D. Ralephenya",slug:"tshakane-r.m.d.-ralephenya",fullName:"Tshakane R.M.D. Ralephenya",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"University of the Witwatersrand",country:{name:"South Africa"}}},{id:"419270",title:"Dr.",name:"Ann",middleName:null,surname:"Chianchitlert",slug:"ann-chianchitlert",fullName:"Ann Chianchitlert",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Walailak University",country:{name:"Thailand"}}},{id:"419271",title:"Dr.",name:"Diane",middleName:null,surname:"Selvido",slug:"diane-selvido",fullName:"Diane Selvido",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Walailak University",country:{name:"Thailand"}}},{id:"419272",title:"Dr.",name:"Irin",middleName:null,surname:"Sirisoontorn",slug:"irin-sirisoontorn",fullName:"Irin Sirisoontorn",position:null,profilePictureURL:"//cdnintech.com/web/frontend/www/assets/author.svg",biography:null,institutionString:null,institution:{name:"Walailak University",country:{name:"Thailand"}}}]}},subseries:{item:{id:"5",type:"subseries",title:"Parasitic Infectious Diseases",keywords:"Blood Borne Parasites, Intestinal Parasites, Protozoa, Helminths, Arthropods, Water Born Parasites, Epidemiology, Molecular Biology, Systematics, Genomics, Proteomics, Ecology",scope:"Parasitic diseases have evolved alongside their human hosts. In many cases, these diseases have adapted so well that they have developed efficient resilience methods in the human host and can live in the host for years. Others, particularly some blood parasites, can cause very acute diseases and are responsible for millions of deaths yearly. Many parasitic diseases are classified as neglected tropical diseases because they have received minimal funding over recent years and, in many cases, are under-reported despite the critical role they play in morbidity and mortality among human and animal hosts. The current topic, Parasitic Infectious Diseases, in the Infectious Diseases Series aims to publish studies on the systematics, epidemiology, molecular biology, genomics, pathogenesis, genetics, and clinical significance of parasitic diseases from blood borne to intestinal parasites as well as zoonotic parasites. We hope to cover all aspects of parasitic diseases to provide current and relevant research data on these very important diseases. In the current atmosphere of the Coronavirus pandemic, communities around the world, particularly those in different underdeveloped areas, are faced with the growing challenges of the high burden of parasitic diseases. At the same time, they are faced with the Covid-19 pandemic leading to what some authors have called potential syndemics that might worsen the outcome of such infections. Therefore, it is important to conduct studies that examine parasitic infections in the context of the coronavirus pandemic for the benefit of all communities to help foster more informed decisions for the betterment of human and animal health.",coverUrl:"https://cdn.intechopen.com/series_topics/covers/5.jpg",hasOnlineFirst:!0,hasPublishedBooks:!0,annualVolume:11401,editor:{id:"67907",title:"Dr.",name:"Amidou",middleName:null,surname:"Samie",slug:"amidou-samie",fullName:"Amidou Samie",profilePictureURL:"https://mts.intechopen.com/storage/users/67907/images/system/67907.jpg",biography:"Dr. Amidou Samie is an Associate Professor of Microbiology at the University of Venda, in South Africa, where he graduated for his PhD in May 2008. He joined the Department of Microbiology the same year and has been giving lectures on topics covering parasitology, immunology, molecular biology and industrial microbiology. He is currently a rated researcher by the National Research Foundation of South Africa at category C2. He has published widely in the field of infectious diseases and has overseen several MSc’s and PhDs. His research activities mostly cover topics on infectious diseases from epidemiology to control. His particular interest lies in the study of intestinal protozoan parasites and opportunistic infections among HIV patients as well as the potential impact of childhood diarrhoea on growth and child development. He also conducts research on water-borne diseases and water quality and is involved in the evaluation of point-of-use water treatment technologies using silver and copper nanoparticles in collaboration with the University of Virginia, USA. He also studies the use of medicinal plants for the control of infectious diseases as well as antimicrobial drug resistance.",institutionString:null,institution:{name:"University of Venda",institutionURL:null,country:{name:"South Africa"}}},editorTwo:null,editorThree:null,series:{id:"6",title:"Infectious Diseases",doi:"10.5772/intechopen.71852",issn:"2631-6188"},editorialBoard:[{id:"188881",title:"Dr.",name:"Fernando José",middleName:null,surname:"Andrade-Narváez",slug:"fernando-jose-andrade-narvaez",fullName:"Fernando José Andrade-Narváez",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRIV7QAO/Profile_Picture_1628834308121",institutionString:null,institution:{name:"Autonomous University of Yucatán",institutionURL:null,country:{name:"Mexico"}}},{id:"269120",title:"Dr.",name:"Rajeev",middleName:"K.",surname:"Tyagi",slug:"rajeev-tyagi",fullName:"Rajeev Tyagi",profilePictureURL:"https://s3.us-east-1.amazonaws.com/intech-files/0030O00002bRaBqQAK/Profile_Picture_1644331884726",institutionString:"CSIR - Institute of Microbial Technology, India",institution:null},{id:"336849",title:"Prof.",name:"Ricardo",middleName:null,surname:"Izurieta",slug:"ricardo-izurieta",fullName:"Ricardo Izurieta",profilePictureURL:"https://mts.intechopen.com/storage/users/293169/images/system/293169.png",institutionString:null,institution:{name:"University of South Florida",institutionURL:null,country:{name:"United States of America"}}}]},onlineFirstChapters:{paginationCount:10,paginationItems:[{id:"82804",title:"Psychiatric Problems in HIV Care",doi:"10.5772/intechopen.106077",signatures:"Seggane Musisi and Noeline Nakasujja",slug:"psychiatric-problems-in-hiv-care",totalDownloads:1,totalCrossrefCites:0,totalDimensionsCites:0,authors:null,book:{title:"Future Opportunities and Tools for Emerging Challenges for HIV/AIDS Control",coverURL:"https://cdn.intechopen.com/books/images_new/11575.jpg",subseries:{id:"6",title:"Viral Infectious Diseases"}}},{id:"82817",title:"Perspective Chapter: Microfluidic Technologies for On-Site Detection and Quantification of Infectious Diseases - 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