Open access peer-reviewed chapter

Investigation of High-Speed Transient Processes and Parameter Extraction of InGaAsP Laser Diodes

By Juozas Vysniauskas, Tomas Vasiliauskas, Emilis Sermuksnis, Vilius Palenskis and Jonas Matukas

Submitted: May 13th 2011Reviewed: October 11th 2011Published: April 25th 2012

DOI: 10.5772/35666

Downloaded: 1782

© 2012 The Author(s). Licensee IntechOpen. This chapter is distributed under the terms of the Creative Commons Attribution 3.0 License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to cite and reference

Link to this chapter Copy to clipboard

Cite this chapter Copy to clipboard

Juozas Vysniauskas, Tomas Vasiliauskas, Emilis Sermuksnis, Vilius Palenskis and Jonas Matukas (April 25th 2012). Investigation of High-Speed Transient Processes and Parameter Extraction of InGaAsP Laser Diodes, Semiconductor Laser Diode Technology and Applications, Dnyaneshwar Shaligram Patil, IntechOpen, DOI: 10.5772/35666. Available from:

chapter statistics

1782total chapter downloads

More statistics for editors and authors

Login to your personal dashboard for more detailed statistics on your publications.

Access personal reporting

Related Content

This Book

Next chapter

Spectral Narrowing and Brightness Increase in High Power Laser Diode Arrays

By Niklaus Ursus Wetter

Related Book

First chapter

Gaseous Scanning Electron Microscope (GSEM): Applications and Improvement

By Lahcen Khouchaf

We are IntechOpen, the world's leading publisher of Open Access books. Built by scientists, for scientists. Our readership spans scientists, professors, researchers, librarians, and students, as well as business professionals. We share our knowledge and peer-reveiwed research papers with libraries, scientific and engineering societies, and also work with corporate R&D departments and government entities.

More About Us