Open access peer-reviewed chapter

Etching of Silicon Carbide Using Chlorine Trifluoride Gas

By Hitoshi Habuka

Submitted: March 1st 2012Reviewed: June 2nd 2012Published: October 16th 2012

DOI: 10.5772/50387

Downloaded: 1985

How to cite and reference

Link to this chapter Copy to clipboard

Cite this chapter Copy to clipboard

Hitoshi Habuka (October 16th 2012). Etching of Silicon Carbide Using Chlorine Trifluoride Gas, Physics and Technology of Silicon Carbide Devices, Yasuto Hijikata, IntechOpen, DOI: 10.5772/50387. Available from:

Embed this chapter on your site Copy to clipboard

<iframe src="http://www.intechopen.com/embed/physics-and-technology-of-silicon-carbide-devices/etching-of-silicon-carbide-using-chlorine-trifluoride-gas" />

Embed this code snippet in the HTML of your website to show this chapter

chapter statistics

1985total chapter downloads

More statistics for editors and authors

Login to your personal dashboard for more detailed statistics on your publications.

Access personal reporting

Related Content

This Book

Next chapter

PECVD Amorphous Silicon Carbide (α-SiC) Layers for MEMS Applications

By Ciprian Iliescu and Daniel P. Poenar

Related Book

First chapter

The Chinese Iron Ore Deposits and Ore Production

By Guangrong Li

We are IntechOpen, the world's leading publisher of Open Access books. Built by scientists, for scientists. Our readership spans scientists, professors, researchers, librarians, and students, as well as business professionals. We share our knowledge and peer-reveiwed research papers with libraries, scientific and engineering societies, and also work with corporate R&D departments and government entities.

More about us