Open access peer-reviewed chapter

Hafnium-based High-k Gate Dielectrics

By A. P. Huang, Z. C. Yang and Paul K. Chu

Published: April 1st 2010

DOI: 10.5772/8631

Downloaded: 9516

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A. P. Huang, Z. C. Yang and Paul K. Chu (April 1st 2010). Hafnium-based High-k Gate Dielectrics, Advances in Solid State Circuit Technologies, Paul K Chu, IntechOpen, DOI: 10.5772/8631. Available from:

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