Sadafumi Yoshida

By Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida

Part of the book: Properties and Applications of Silicon Carbide

By Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi and Sadafumi Yoshida

Part of the book: Physics and Technology of Silicon Carbide Devices

By Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

Part of the book: Physics and Technology of Silicon Carbide Devices

By Sadafumi Yoshida, Yasuto Hijikata and Hiroyuki Yaguchi

We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers, and the results suggest the existence of the interface layers, around 1 nm in thickness, having high refractive index than those of both SiC and SiO2. The wavelength dispersions of optical constants of the interface layers were measured in the range of visible to deep UV spectral region, and we found the interface layers have similar dispersion to that of SiC, though the refractive indices are around 1 larger than SiC, which suggests the interface layers are neither transition layers nor roughness layers, but modified SiC, e.g., strained and/or modified composition. By the use of an in-situ ellipsometer, real-time observation of SiC oxidation was performed, and the growth rate enhancement was found in the thin thickness regime as in the case of Si oxidation, which cannot be explained by the Deal-Grove model proposed for Si oxidation. From the measurements of the oxidation temperature and oxygen partial pressure dependences of oxidation rate in the initial stage of oxidation, we have discussed the interface structures and their formation mechanisms within the framework of the interfacial Si-C emission model we proposed for SiC oxidation mechanism.

Part of the book: Advanced Silicon Carbide Devices and Processing